Memory device and fabrication method thereof

TW202642803APending Publication Date: 2026-10-16WINBOND ELECTRONICS CORP
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Patent Information

Application Number
TW115101592
Authority / Receiving Office
TW · TW
Patent Type
Applications
Current Assignee / Owner
Priority Date
2025-02-24
Filing Date
2026-01-15
Publication Date
2026-10-16

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Abstract

A memory device includes a first source line, a first drain line, a charge storage layer, a first word line and a first channel layer. The charge storage layer is laterally disposed between the first word line and the first channel layer. The first word line and the first channel layer extend along a second direction perpendicular to a first direction. The first source line and the first drain line pass through the first channel layer. The first channel layer laterally surrounds the first source line and the first drain line. The first source line and the first drain line extend along the first direction.
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