Capacitor, method of manufacturing capacitor, and method of manufacturing memory device

TW202642812APending Publication Date: 2026-10-16EGTM CO LTD
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Patent Information

Application Number
TW115111988
Authority / Receiving Office
TW · TW
Patent Type
Applications
Current Assignee / Owner
Priority Date
2025-04-02
Filing Date
2026-03-27
Publication Date
2026-10-16

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Abstract

According to an embodiment of the present invention, a method of manufacturing a capacitor comprises forming a lower electrode having first, second, and third electrode layers and a supporter supporting the lower electrode; removing the first electrode layer located on a sidewall of the lower electrode; forming a dielectric film on an outer surface of the lower electrode; and forming an upper electrode on the dielectric film.
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