Semiconductor device and method of making the same

Abstract

The gate structure of a planar transistor has two opposite sides that pass across an active region between two source / drain regions. The two opposite sides are not parallel to each other. As a result, the channel length between the two source / drain regions is not constant across the width of the gate structure. Put another way, multiple channels with different lengths are present between the two source / drain regions. This structure results in high subthreshold swing performance, which manifests as faster transition between the on / off states of the transistor.

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