Semiconductor device and method for fabricating the same

Abstract

A method includes forming a fin having alternating epitaxial layers and sacrificial layers. In some embodiments, the method further includes removing the sacrificial layers to form a gap between adjacent epitaxial layers. In some embodiments, the method further includes after removing the sacrificial layers, forming a first N-type work function metal (NWFM) layer surrounding at least one of the epitaxial layers, where after forming the first NWFM layer, a space remains between portions of the first NWFM layer disposed on opposing surfaces of the adjacent epitaxial layers. In some embodiments, the method further includes forming a second NWFM layer over the first NWFM layer, where the second NWFM layer surrounds the at least one of the epitaxial layers, and where the second NWFM layer substantially fills the space between the portions of the first NWFM layer disposed on opposing surfaces of the adjacent epitaxial layers.

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