Semiconductor structure and methods of fabrication thereof

Abstract

A semiconductor device structure is provided. The semiconductor device structure comprises a first stack of channels of a p-type field effect transistor (PFET) and a second stack of channels of an n-type field effect transistors (NFET) adjacent to the PFET. A gate dielectric layer is formed on each channel of the PFET and the NFET. A first metal gate layer is formed on the gate dielectric layer of the PFET. A second metal gate layer is formed on the gate dielectric layer of the NFET. The second metal gate layer comprises one or more types of aluminum compounds filling at least a central portion of a channel-to-channel space between each pair of immediately adjacent channels of the NFET.

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