Power devices LED from the positive side of the drain and their manufacturing methods

Abstract

The present invention discloses a power device led out from the positive side of the drain and its manufacturing method. The power device comprises a substrate, an epitaxial layer, and an isolation layer. A gate metal is provided on the isolation layer of the gate contact region, and the gate metal is connected to the gate interconnect structure; Setting an active metal on the isolation layer of the active region, and connecting the source metal to the source region; The terminal area is equipped with a voltage resistant ring and a cutoff ring structure. The isolation layer in the peripheral area of the terminal is provided with a drain metal, which is connected to the first injection area in the peripheral area of the terminal. In the present invention, the drain metal is set in the peripheral area of the terminal on the front of the power device, so that the source metal, drain metal, and gate metal of the power device are all located in the same plane, which can effectively reduce the demand for clip materials, improve the performance of the power device, and reduce parasitic effects.

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