Antenna tuning switch structure

Abstract

Disclosed is an antenna tuning switch structure, which includes an epitaxial substrate, a gate structure, a source electrode and a drain electrode. The epitaxial substrate includes a semiconductor substrate and a nitride heterostructure formed on the semiconductor substrate. There is a two-dimensional electron gas within the nitride heterostructure. The gate structure is disposed on the nitride heterostructure. The source electrode and the drain electrode are respectively arranged on the opposite sides of the gate structure. One of the source electrode and the drain electrode is connected to an antenna, the other one of the source electrode and the drain electrode is connected to a tuning element, and the gate structure is used to control an electrical connection between the tuning element and the antenna. Therefore, the antenna tuning switch structure can increase the breakdown voltage, and exhibits low leakage current performance and high power handling capability based on the two-dimensional electron gas, making it suitable for high-power environments.

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