Semiconductor structure, method of manufacturing semiconductor device, and noise-generator structure

Abstract

A method, includes: forming a semiconductor structure including a plurality of nanostructures, a sacrificial gate structure, a source feature, and a drain feature; implanting ions in top and bottom surfaces of the plurality of nanostructures in channel regions of nanostructures; removing the sacrificial gate structure wherein a thickness of a nanostructure becomes uneven; and forming a replacement gate structure around the nanostructures, wherein a combination of an interfacial layer (IL) of the replacement gate structure surrounding the nanostructure and a high K dielectric layer of the replacement gate structure surrounding the nanostructure has an uneven thickness.

Images