Gate metal oxidation protection methods

Abstract

Embodiments described herein relate to metal gate transistor devices, and methods of preventing oxidation thereof. In one or more embodiments, a device is provided. The device includes a conductive layer. A silicon-containing passivation layer is disposed over the conductive layer. An etch stop layer having silicon, carbon, oxygen, and nitrogen, is disposed over the silicon-containing passivation layer. An oxide layer is disposed over the etch stop layer. The silicon-containing passivation layer and the etch stop layer have an opening disposed therethrough, and a metal fill is disposed within the opening.

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