Semiconductor devices and forming method thereof
TW202642840APending Publication Date: 2026-10-16TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD +1
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Patent Information
- Application Number
- TW114137858
- Authority / Receiving Office
- TW · TW
- Patent Type
- Applications
- Current Assignee / Owner
- Priority Date
- 2025-08-09
- Filing Date
- 2025-10-01
- Publication Date
- 2026-10-16
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Abstract
A semiconductor device having gate structures with a protection layer includes a gate dielectric layer on a channel structure, an aluminum-free work function metal layer on the gate dielectric layer, a protection layer on the aluminum-free work function metal layer, and an aluminum-containing work function metal layer on the protection layer.
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