Semiconductor device and method of manufacturing semiconductor device

TW202642841APending Publication Date: 2026-10-16WUHAN XINXIN SEMICON MFG CO LTD
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Patent Information

Application Number
TW115113015
Authority / Receiving Office
TW · TW
Patent Type
Applications
Current Assignee / Owner
Priority Date
2025-04-10
Filing Date
2026-04-01
Publication Date
2026-10-16

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Abstract

A method of manufacturing a semiconductor device includes: providing a semiconductor substrate, having a cell region and a periphery region; reducing a height of a portion of the semiconductor substrate in the periphery region; forming a plurality of first trenches in the portion of the semiconductor substrate in the periphery region; forming a plurality of second trenches in a portion of the semiconductor substrate in the cell region; forming an isolation structure to fill the first trenches and the second trenches. The plurality of first trenches divide the portion of the semiconductor substrate in the periphery region into a plurality of periphery active areas, and the plurality of second trenches divide the portion of the semiconductor substrate in the cell region into a plurality of array active areas. The array active areas are higher than the periphery active areas.
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