Semiconductor device, capacitor and method of fabricating semiconductor devices

Abstract

Asymmetrical digital cells embedded with capacitors are provided. In one aspect of the present disclosure, a semiconductor device includes a first spatial region for digital design cells. The first spatial region includes a metal-oxide-metal (MOM) capacitor. The mom capacitor includes a first plurality of lines of a first electrode of the MOM capacitor interleaved with a second plurality of lines of a second electrode of the MOM capacitor at a first metallization layer. The semiconductor device includes a second spatial region (e.g., laterally spaced from the first spatial region).

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