Semiconductor device and method for fabricating the same
TW202642843AActive Publication Date: 2026-10-16UNITED MICROELECTRONICS CORP
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Patent Information
- Application Number
- TW114112945
- Authority / Receiving Office
- TW · TW
- Patent Type
- Applications
- Current Assignee / Owner
- Filing Date
- 2025-04-07
- Publication Date
- 2026-10-16
- Estimated Expiration
- 2045-04-06
Smart Images
Figure TWG2TA001080067_001 
Figure TWG2TA001080067_002 
Figure TWG2TA001080067_003
Abstract
A method for fabricating a semiconductor device includes the steps of forming a first trench in a substrate, forming a gate dielectric layer in the first trench, forming a gate structure on the gate dielectric layer, removing part of the gate structure and part of the substrate to form a second trench, forming a liner in the second trench, forming a field plate in the second trench, forming a passivation layer on the gate structure, forming a source electrode on the substrate to connect to the field plate, and forming a drain electrode on a backside of the substrate.
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