Method of fabricating semiconductor structure and semiconductor structure

Abstract

At least one electronic device is encircled by an inner deep trench isolation (DTI) ring and an outer DTI ring encircling the inner DTI ring. A semiconductor structure includes at least one electronic device surrounded by at least one DTI ring, where each DTI ring has a circular layout, an oval layout, or a polygonal layout with at least five sides. A method of fabricating a semiconductor structure includes etching at least one trench ring into a semiconductor layer or substrate with sidewalls that are not perpendicular respective to a surface of the semiconductor layer or substrate, performing ion implantation into the sidewalls and bottom of the at least one trench ring, filling the at least one trench ring with a filler material to form a corresponding at least one DTI ring, and forming at least one electronic device inside the at least one DTI ring.

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