Semiconductor device and forming method thereof

Abstract

Semiconductor devices and methods of forming the same are provided. In an embodiment, an exemplary method includes receiving a precursor structure comprising an active region disposed over a substrate and extending lengthwise along a first direction, a source / drain feature disposed over the active region, a top portion of the source / drain feature is above a top surface of a channel region of the active region, and a gate structure comprising a gate dielectric layer over the active region and a gate electrode over the gate dielectric layer, the gate electrode comprising a titanium-containing material. The method also includes performing an etching process to partially remove the top portion of the source / drain feature, at least partially converting a remaining part of the top portion of the source / drain feature into a dielectric layer, and after the converting, forming a source / drain contact electrically coupled to the source / drain feature.

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