Differential interfacial layer
TW202642848APending Publication Date: 2026-10-16APPLIED MATERIALS INC
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Patent Information
- Application Number
- TW114149852
- Authority / Receiving Office
- TW · TW
- Patent Type
- Applications
- Current Assignee / Owner
- Priority Date
- 2024-12-20
- Filing Date
- 2025-12-18
- Publication Date
- 2026-10-16
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Abstract
Described are methods of forming a semiconductor structures. A first interfacial layer of a first gate dielectric is formed on a first semiconductor channel of a first transistor. The first interfacial layer has a first thickness. A second interfacial layer of a second gate dielectric is formed on a second semiconductor channel of a second transistor. The second interfacial layer has a second thickness that is greater than the first thickness.
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