Integrated circuit device and method

TW202642860APending Publication Date: 2026-10-16TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
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Patent Information

Application Number
TW114137880
Authority / Receiving Office
TW · TW
Patent Type
Applications
Current Assignee / Owner
Priority Date
2025-08-13
Filing Date
2025-10-01
Publication Date
2026-10-16

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Abstract

An IC device includes three power rails, the second power rail aligned with a line midway between the first and third power rails, and first and second adjacent rows of cells extending between the first and third power rails. Each cell includes two active areas extending between isolation structures, first and second cells of the first row are aligned with third and fourth cells of the second row, a first active area of the first cell has a first width and a first distance from the center line, first active areas of the second and fourth cells have a second width greater than the first width and a second distance from the center line less than the first distance, and a first active area of the third cell has a third width greater than the second width and a third distance from the center line less than the second distance.
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