Method for transferring a thin layer

Abstract

The invention relates to a method for transferring a thin layer comprising a first localized ion implantation of hydrogen, helium, a noble gas, or a mixture thereof in a donor substrate to create a weakened zone; a second ion implantation of hydrogen and / or helium in the donor substrate to create a weakened plane delimiting the thin layer; molecular bonding of the donor and receiving substrates; a detachment of the thin layer comprising a second heat treatment. A first heat treatment of the donor substrate is performed between the first and second ion implantations to grow microcracks so as to embrittle the weakened zone. Conditions of the first ionic implantation and the first heat treatment are such that the donor substrate is devoid of bubbles during bonding and such that the weakened zone is a fracture initiator.

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