Oxide semiconductor films and their manufacturing methods, transistors, semiconductor devices, electronic circuits, electrical machinery, electronic machinery, vehicles and power engines

TW202642913APending Publication Date: 2026-10-16IDEMITSU KOSAN CO LTD
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Patent Information

Application Number
TW115106154
Authority / Receiving Office
TW · TW
Patent Type
Applications
Current Assignee / Owner
Priority Date
2025-02-14
Filing Date
2026-02-13
Publication Date
2026-10-16

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    Figure TWG2TA001081120_003
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Abstract

The oxide semiconductor film of the present invention is formed by atomic layer deposition and contains indium as the main component, with trivalent cations uniformly distributed in the thickness direction of the oxide semiconductor film.
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