Methods to form gate oxide

Abstract

Processing methods may be performed to produce semiconductor structures that include a high-k dielectric material. The methods include forming an epitaxial silicon layer on a substrate surface. An interfacial layer is formed on the epitaxial silicon layer by pre-treating the epitaxial silicon layer, oxidizing the pre-treated surface to form the interfacial layer, and performing a post-treatment process. The interfacial layer may then be treated with hydration chemistry to form a treated interfacial layer, followed by deposition of a high-k dielectric layer on the treated interfacial layer.

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