Substrate processing method, substrate processing apparatus and substrate processing system

Abstract

The present invention addresses the issue of providing a technique for reducing defects in the fundamental components of a carbon film during the formation of a carbon film on the upper surface of a patterned substrate film. The disclosed substrate processing method comprises the following steps: preparing a substrate having an etchable film and a substrate film formed on the etchable film, having an upper surface and side surfaces; exposing the substrate to a plasma generated from a film-forming gas containing a raw material gas containing carbon and hydrogen, selectively forming a first carbon film on the upper surface relative to the side surface of the substrate film; heat-treating the substrate to remove hydrogen from the first carbon film; exposing the substrate to the plasma to form a second carbon film on the first carbon film; and etching the etchable film using the substrate film, the first carbon film, and the second carbon film as a mask.

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