Selective hafnium oxide etch

Abstract

Embodiments described herein generally relate to methods for forming low resistivity contacts for semiconductor device formation. More particularly, embodiments provide methods for selective etching of materials used to form a portion of an electrical contact formed on semiconductor substrates. In some embodiments, a method includes providing a substrate including a gate material and an insulating material disposed at least partially around the gate material, the insulating material including a high-k dielectric. The substrate is exposed to a plasma including a gas that includes one or more of H2, Ar, Xe, Ne, and Kr. The method further includes etching the high-k dielectric by providing a chlorine-containing precursor while heating the substrate to a temperature of about

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