Method of forming semiconductor devices

Abstract

A multiple-reticle exposure technique is used to manufacture different lateral regions of a semiconductor device (e.g., a monolithic superchip). The multiple-reticle exposure technique may be used for frontside processing and for backside processing of a semiconductor device. For example, different sets of reticles may be used to pattern different lateral regions on the frontside of the semiconductor device, and different sets of reticles may be used to pattern different lateral regions on the backside of the semiconductor device. This further expands the capability of implementing diverse sets of functional areas across the semiconductor device to the backside as well as the frontside for the semiconductor device. Moreover, the use of the multiple-reticle exposure technique on the backside of the semiconductor device is compatible with direct bonding of the semiconductor device to another semiconductor device to form three-dimensional integrated circuit (3DIC) devices.

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