Semiconductor devices and methods of manufacturing thereof

Abstract

A semiconductor device may include an interposer to connect a first semiconductor die to a second semiconductor die. The interposer may include a plurality of metallization layers and a plurality of bump structures disposed over a topmost one of the plurality of metallization layers. A first one of the plurality of metallization layers may include a plurality of first interconnect structures, a plurality of second interconnect structures, and a plurality of third interconnect structures. The plurality of first interconnect structures may carry a first supply voltage. The plurality of second interconnect structures may carry a second supply voltage. Each of the plurality of bump structures may be formed directly above a pair of a corresponding one of the plurality of first interconnect structures and a corresponding one of the plurality of second interconnect structures.

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