Semiconductor device and manufacturing method thereof

Abstract

A method includes forming a semiconductor device over a substrate, and forming an interconnect structure over the semiconductor device. The interconnect structure includes a metal plug including a first metal disposed in a first dielectric layer. A second dielectric layer is formed over the first dielectric layer. The second dielectric layer has an opening therein exposing the metal plug. A nitridation process is performed on the metal plug to form a nitridation layer on the metal plug.

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