Semiconductor device including wiring protective film

Abstract

To improve element performance and reliability by forming an air gap and a wiring protective film on a side wall of a wiring structure, a semiconductor device may include a lower conductive pattern, a wiring structure on the lower conductive pattern, extending in a first direction, and including upper and bottom surfaces opposing each other in a second direction, the bottom surface of the wiring structure facing the lower conductive pattern, a side wall of the wiring structure connecting the upper and bottom surfaces of the wiring structure, and a first wiring protective film in contact with the wiring structure, and extending along the side wall of the wiring structure, in which the first wiring protective film includes a cover region covering the side wall of the wiring structure, and a plurality of protruding regions, each of which protrudes from the cover region in a third direction.

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