Semiconductor device and method of manufacturing the same
TW202643010APending Publication Date: 2026-10-16TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
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Patent Information
- Application Number
- TW114121932
- Authority / Receiving Office
- TW · TW
- Patent Type
- Applications
- Current Assignee / Owner
- Priority Date
- 2025-04-14
- Filing Date
- 2025-06-12
- Publication Date
- 2026-10-16
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Figure TWG2TA001080459_001 
Figure TWG2TA001080459_002 
Figure TWG2TA001080459_003
Abstract
An interposer die includes a first semiconductor layer, an insulator layer on the first semiconductor layer, and a second semiconductor layer on the insulator layer and separated from the first semiconductor layer by the insulator layer. The interposer die includes a first through-semiconductor via extending from a top surface of the second semiconductor layer, through the insulator layer, to a bottom surface of the first semiconductor layer.
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