Semiconductor device and method of making using a die and pillar first approach

TW202643022APending Publication Date: 2026-10-16STATS CHIPPAC LTD
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Patent Information

Application Number
TW115106895
Authority / Receiving Office
TW · TW
Patent Type
Applications
Current Assignee / Owner
Priority Date
2025-04-07
Filing Date
2026-02-25
Publication Date
2026-10-16

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Abstract

A semiconductor device has a semiconductor die and a conductive pillar disposed adjacent to the semiconductor die. An encapsulant is deposited over the semiconductor die and conductive pillar. A first conductive layer is formed directly on the encapsulant, conductive pillar, and semiconductor die. A second conductive layer is formed directly on the encapsulant, conductive pillar, and semiconductor die opposite the first conductive layer.
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