Selective film deposition using halogen deactivation

TWI769291BActive Publication Date: 2022-07-01TOKYO ELECTRON LTD
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Patent Information

Authority / Receiving Office
TW · TW
Patent Type
Patents
Current Assignee / Owner
Filing Date
2018-08-10
Publication Date
2022-07-01

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Abstract

Embodiments of the present invention provide selective film deposition in recessed features of a substrate using halogen deactivation. The substrate processing method includes: a) providing a substrate comprising a field region and a recessed feature having sidewalls and a bottom; b) exposing the substrate to a first precursor gas to form a first precursor layer on the substrate; c) exposing the substrate to a plasma-excited halogen-containing gas to deactivate or at least partially remove the first precursor layer on the field region and the bottom of the recessed feature; and d) exposing the substrate to a second precursor gas that reacts with the first precursor layer to form a material layer on the sidewalls of the recessed feature, but not on the field region and the bottom of the recessed feature that have been deactivated by the plasma-excited halogen-containing gas.
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Description

[Technical Field] This invention relates to the field of semiconductor manufacturing and semiconductor devices, and more particularly, to selective film deposition using halogen deactivation. [Related Applications] This application relates to and asserts priority to U.S. Provisional Patent Application No. 62 / 544,460, filed August 11, 2017, the entire contents of which are incorporated herein by reference. [Previous Technology] When fabricating smaller transistors, the critical dimension (CD) or resolution of patterned feature areas becomes more challenging. Self-aligned patterning needs to replace overlay-driven patterning, enabling cost-effective scaling even after the introduction of extreme ultraviolet (EUV) lithography. Patterning options that achieve reduced variability, extended scaling, and enhanced CD and process control are required. Selective thin-film formation is a critical step in patterning at highly scaled technology nodes. [Summary of the Invention] Embodiments of the present invention provide selective film deposition in recessed features of a substrate using halogen deactivation. According to one embodiment, a substrate processing method is provided, the method comprising: a) providing a substrate including a field region and a recessed feature having sidewalls and a bottom; b) exposing the substrate to a first precursor gas to form a first precursor layer on the substrate; c) exposing the substrate to a plasma-excited halogen-containing gas to deactivate or at least partially remove the first precursor layer on the field region and the bottom of the recessed feature; and d) exposing the substrate to a second precursor gas that reacts with the first precursor layer to form a material layer on the sidewalls of the recessed feature, but not on the field region and the bottom of the recessed feature that have been deactivated by the plasma-excited halogen-containing gas. Steps b)-d) may be repeated at least once to deposit an additional amount of material layer on the sidewalls of the recessed feature. According to another embodiment, a substrate processing method is provided, the method comprising: a) providing a substrate including a field region and a recessed feature having sidewalls and a bottom; b) exposing the substrate to a first precursor gas to form a first precursor layer on the substrate; c) exposing the substrate to a halogen-containing gas in the absence of plasma to deactivate the first precursor layer on the field region of the substrate; and d) exposing the substrate to a second precursor gas, the second precursor gas reacting with the first precursor layer to form a material layer on the sidewalls and the bottom of the recessed feature, but not on the field region deactivated by the halogen-containing gas. Steps b)-d) may be repeated at least once to deposit an additional amount of material layer on the sidewalls and the bottom of the recessed feature. In one example, the material layer may substantially fill the recessed feature.

Implementation Method

Claims

1. A substrate processing method comprising: (a) providing a substrate including a field region and a recessed feature, the recessed feature having sidewalls and a bottom; (b) exposing the substrate to a first precursor gas to form a first precursor layer on the substrate; (c) exposing the substrate to a plasma-excited halogen-containing gas to deactivate or at least partially remove the first precursor layer on the field region and the bottom of the recessed feature of the substrate; and (d) exposing the substrate to a second precursor gas, the second precursor gas reacting with the first precursor layer to form a material layer on the sidewall of the recessed feature, but not on the field region and the bottom of the recessed feature that have been deactivated by the plasma-excited halogen-containing gas.

2. The substrate processing method of claim 1 further includes: (e) repeating steps b)-d) at least once to deposit an additional amount of material layer on the sidewall in the recessed feature.

3. As in the substrate processing method of claim 1, wherein, Step c) Forming a first halide precursor layer on the field area of ​​the substrate and the bottom of the recessed feature, the method further comprising: after step d), removing the first halide precursor layer from the substrate by heat treatment, performing an oxidation step, or a combination thereof.

4. As in the substrate processing method of claim 1, wherein, The first precursor gas includes a metal-containing precursor.

5. As in the substrate processing method of claim 4, wherein, The metal-containing precursor contains alkaline earth elements, titanium, hafnium, zirconium, aluminum, rare earth elements, or combinations of two or more thereof.

6. As in the substrate processing method of claim 1, wherein, The halogen-containing gas includes Cl2, BCl3, CCl4, HCl, HBr, TiCl4, and combinations thereof.

7. As in the substrate processing method of claim 1, wherein, The second precursor gas includes oxygen-containing gas, nitrogen-containing gas, or a combination thereof.

8. As in the substrate processing method of claim 1, wherein, The second precursor gas includes gases containing oxygen and nitrogen.

9. The substrate processing method as described in claim 1, wherein, The step of exposing the substrate to a plasma-excited halogen-containing gas further includes applying a bias voltage to the substrate support supporting the substrate to provide anisotropic plasma exposure.

10. A substrate processing method comprising: (a) providing a substrate including a field region and a recessed feature, the recessed feature having sidewalls and a bottom; (b) exposing the substrate to a hafnium precursor gas to form a hafnium precursor layer on the substrate; (c) exposing the substrate to a plasma-excited Cl2 gas to deactivate or at least partially remove the hafnium precursor layer on the field region and the bottom of the recessed feature of the substrate; (d) exposing the substrate to an oxygen-containing gas that reacts with the hafnium precursor layer to form a hafnium oxide layer on the sidewall of the recessed feature, but not on the field region and the bottom of the recessed feature that have been deactivated by the plasma-excited Cl2 gas; and (e) repeating steps b)-d) at least once to deposit an additional amount of hafnium oxide layer on the sidewall in the recessed feature.

11. The substrate processing method as described in claim 10, wherein, Step c) Forming a chlorinated layer on the field area of ​​the substrate and the bottom of the recessed feature, the method further comprising: after step d), removing the chlorinated layer from the substrate by heat treatment, performing an oxidation step, or a combination thereof.

12. As in the substrate processing method of claim 10, wherein, The hafnium precursors include Hf(OtBu)4 (tert-butanol hafnium, HTB), Hf(NEt2)4 (tetra(diethylamino)hafnium, TDEAH), Hf(NEtMe)4 (tetra(ethylmethylamino)hafnium, TEMAH), or Hf(NMe2)4 (tetra(dimethylamino)hafnium, TDMAH).

13. As in the substrate processing method of claim 10, wherein, The oxygen-containing system is selected from the group consisting of H2O, O2, O3, H2O2, and combinations thereof.

14. The substrate processing method as described in claim 10, wherein, The step of exposing the substrate to plasma-excited Cl2 gas further includes applying a bias voltage to the substrate support supporting the substrate to provide anisotropic plasma exposure.

15. A substrate processing method comprising: (a) providing a substrate including a field region and a recessed feature, the recessed feature having sidewalls and a bottom; (b) exposing the substrate to a first precursor gas to form a first precursor layer on the substrate; (c) exposing the substrate to a halogen-containing gas in the absence of plasma to deactivate or at least partially remove the first precursor layer on the field region of the substrate; and (d) exposing the substrate to a second precursor gas, the second precursor gas reacting with the first precursor layer to form a material layer on the sidewalls and the bottom of the recessed feature, but not on the field region deactivated by the halogen-containing gas.

16. The substrate processing method of claim 15 further includes: (e) repeating steps b)-d) at least once to deposit an additional amount of material layer on the sidewall and the bottom of the recessed feature.

17. The substrate processing method as described in claim 15, wherein, Step c) Forming a first halide precursor layer on the field region of the substrate, the method further comprising: after step d), removing the first halide precursor layer from the substrate by heat treatment, performing an oxidation step, or a combination thereof.

18. The substrate processing method as described in claim 15, wherein, The first precursor gas includes a metal-containing precursor.

19. The substrate processing method as described in claim 18, wherein, The metal-containing precursor contains alkaline earth elements, titanium, hafnium, zirconium, aluminum, rare earth elements, or combinations thereof.

20. The substrate processing method as described in claim 15, wherein, The halogen-containing gas includes Cl2, BCl3, CCl4, HCl, HBr, TiCl4, and combinations thereof.

21. The substrate processing method as described in claim 15, wherein, The second precursor gas includes oxygen-containing gas, nitrogen-containing gas, or a combination thereof.

22. The substrate processing method as described in claim 15, wherein, The second precursor gas includes gases containing oxygen and nitrogen.

Citation Information

Patent Citations

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