Display devices, display modules and electronic devices

Abstract

A display device with light detection function is provided. The display device includes a first substrate, a second substrate, a light-receiving element, a light-emitting element, a resin layer, and a light-shielding layer. The light-receiving element, the light-emitting element, the resin layer, and the light-shielding layer are each located between the first substrate and the second substrate. The light-receiving element includes a first pixel electrode on the first substrate, an active layer on the first pixel electrode, and a common electrode on the active layer. The light-emitting element includes a second pixel electrode on the first substrate, a first light-emitting layer on the second pixel electrode, and a common electrode on the first light-emitting layer. The resin layer and the light-shielding layer are each located between the common electrode and the second substrate. The resin layer includes a portion overlapping the light-emitting element. The light-shielding layer includes a portion located between the common electrode and the resin layer. The resin layer includes an opening overlapping the light-receiving element or is configured as an island. At least a portion of the light passing through the second substrate is incident on the light-receiving element without passing through the resin layer.

Description

Technical Field

[0001] One embodiment of the present invention relates to a display device, a display module, and an electronic device. Another embodiment of the present invention relates to a display device comprising a light-receiving element and a light-emitting element.

[0002] Furthermore, one embodiment of the present invention is not limited to the above-described technical fields. Examples of technical fields for one embodiment of the present invention include semiconductor devices, display devices, light-emitting devices, energy storage devices, memory devices, electronic devices, lighting equipment, input devices (e.g., touch sensors), input / output devices (e.g., touch panels), driving methods for these devices, or manufacturing methods for these devices. Prior Technology

[0003] In recent years, display devices have been expected to be used in a variety of different fields. For example, as large display devices, examples include home televisions (also known as TVs or TV receivers), digital signage, or public information displays (PIDs). In addition, as portable information terminals, smartphones or tablets with touch panels are under development.

[0004] As display devices, for example, light-emitting devices incorporating light-emitting elements are under development. Light-emitting elements (also referred to as "EL elements") utilizing the electroluminescence (hereinafter referred to as EL) phenomenon have the characteristics of being easy to achieve in thin and lightweight form, being able to respond to input signals at high speed, and being able to be driven by a low-voltage DC power supply, and are therefore used in display devices. For example, Patent Document 1 discloses a flexible light-emitting device using an organic EL element.

[0005] [Patent Document 1] Japanese Patent Application Publication No. 2014-197522 Summary of the Invention

[0006] One objective of one embodiment of the present invention is to provide a display device with light detection function. Another objective of one embodiment of the present invention is to provide a highly convenient display device. Another objective of one embodiment of the present invention is to provide a multifunctional display device. Another objective of one embodiment of the present invention is to provide a display device with high display quality. Another objective of one embodiment of the present invention is to provide a display device with high light detection sensitivity. Another objective of one embodiment of the present invention is to provide a novel display device.

[0007] Note that the description of the above objectives does not preclude the existence of other objectives. One embodiment of the present invention does not necessarily need to achieve all of the above objectives. Objectives other than those described above can be extracted from the specification, drawings, and claims.

[0008] One embodiment of the present invention includes a display device comprising a first substrate, a second substrate, a light-receiving element, a first light-emitting element, a resin layer, and a first light-shielding layer. The light-receiving element, the first light-emitting element, the resin layer, and the first light-shielding layer are each located between the first substrate and the second substrate. The light-receiving element includes a first pixel electrode on the first substrate, an active layer on the first pixel electrode, and a common electrode on the active layer. The first light-emitting element includes a second pixel electrode on the first substrate, a first light-emitting layer on the second pixel electrode, and a common electrode on the first light-emitting layer. The resin layer and the first light-shielding layer are each located between the common electrode and the second substrate. The resin layer includes an opening overlapping the light-receiving element. The resin layer includes a portion overlapping the first light-emitting element. The first light-shielding layer includes a portion located between the common electrode and the resin layer. Preferably, the first light-shielding layer covers at least a portion of the opening and at least a portion of the side surface of the resin layer exposed in the opening.

[0009] One embodiment of the present invention includes a display device comprising a first substrate, a second substrate, a light-receiving element, a first light-emitting element, a resin layer, and a first light-shielding layer. The light-receiving element, the first light-emitting element, the resin layer, and the first light-shielding layer are each located between the first substrate and the second substrate. The light-receiving element includes a first pixel electrode on the first substrate, an active layer on the first pixel electrode, and a common electrode on the active layer. The first light-emitting element includes a second pixel electrode on the first substrate, a first light-emitting layer on the second pixel electrode, and a common electrode on the first light-emitting layer. The resin layer and the first light-shielding layer are each located between the common electrode and the second substrate. The resin layer is configured as an island and includes a portion overlapping with the first light-emitting element. The first light-shielding layer includes a portion located between the common electrode and the resin layer. At least a portion of the light passing through the second substrate is incident on the light-receiving element without passing through the resin layer. Preferably, the first light-shielding layer covers at least a portion of the side surface of the resin layer.

[0010] A preferred embodiment of the display device of the present invention further includes an adhesive layer. The adhesive layer is preferably located between a common electrode and a second substrate. The resin layer and the first light-shielding layer are preferably each located between the adhesive layer and the second substrate. The adhesive layer preferably includes a first portion overlapping a light-receiving element and a second portion overlapping a first light-emitting element. The first portion is preferably thicker than the second portion.

[0011] A preferred embodiment of the display device of the present invention further includes a common layer. The common layer preferably includes a portion located between the first pixel electrode and the common electrode and a portion located between the second pixel electrode and the common electrode.

[0012] A preferred embodiment of the display device of the present invention further includes a partition wall. The partition wall preferably covers the ends of the first pixel electrode and the second pixel electrode. The partition wall preferably functions to absorb at least a portion of the light emitted by the first light-emitting element. Furthermore, a preferred embodiment of the display device of the present invention further includes a partition wall and a second light-shielding layer. The partition wall preferably covers the ends of the first pixel electrode and the second pixel electrode. Preferably, the second light-shielding layer includes a portion located between the partition wall and the first light-shielding layer and functions to absorb at least a portion of the light emitted by the first light-emitting element. In a top view, the partition wall preferably includes an opening between the light-receiving element and the first light-emitting element. The second light-shielding layer preferably covers the opening of the partition wall. In a top view, the light-receiving element is preferably surrounded by the second light-shielding layer.

[0013] A preferred embodiment of the display device of the present invention further includes a second light-emitting element. The second light-emitting element is preferably located between the first substrate and the second substrate. The second light-emitting element preferably includes a third pixel electrode on the first substrate, a second light-emitting layer on the third pixel electrode, and a common electrode on the second light-emitting layer. The first light-emitting element preferably emits light emitted by the first light-emitting layer. The second light-emitting element preferably emits light emitted by the second light-emitting layer.

[0014] Furthermore, in one embodiment of the display device of the present invention, it is preferred to further include a second light-emitting element, a first color layer, and a second color layer. The second light-emitting element is preferably located between the first substrate and the second substrate. The second light-emitting element preferably includes a third pixel electrode on the first substrate, a first light-emitting layer on the third pixel electrode, and a common electrode on the first light-emitting layer. The first color layer and the second color layer are preferably each located between the common electrode and the second substrate. The light emitted by the first light-emitting element is preferably light that has been extracted into a first color by the first color layer. The light emitted by the second light-emitting element is preferably light that has been extracted into a second color by the second color layer.

[0015] Furthermore, a preferred embodiment of the display device of the present invention further includes a second light-emitting element, a partition wall, a second light-shielding layer, and a spacer. The second light-emitting element is preferably located between the first substrate and the second substrate. The second light-emitting element preferably includes a third pixel electrode on the first substrate and a common electrode on the third pixel electrode. The partition wall preferably covers the ends of the first pixel electrode, the ends of the second pixel electrode, and the ends of the third pixel electrode. Preferably, the second light-shielding layer includes a portion located between the partition wall and the first light-shielding layer and has the function of absorbing at least a portion of the light emitted by the first light-emitting element. The spacer preferably includes a portion located between the partition wall and the first light-shielding layer. In a top view, preferably, the second light-shielding layer is located between the light-receiving element and the first light-emitting element, and the spacer is located between the first light-emitting element and the second light-emitting element. The top surface of the spacer is preferably closer to the second substrate than the top surface of the second light-shielding layer.

[0016] The active layer preferably contains organic compounds.

[0017] A preferred embodiment of the display device of the present invention further includes a lens. The lens preferably includes a portion overlapping with a light-receiving element.

[0018] A preferred embodiment of the display device of the present invention includes a first substrate, a second substrate, a light-receiving element, a first light-emitting element, a resin layer, and a first light-shielding layer in the display section. The display section is preferably flexible.

[0019] One embodiment of the present invention is a module including a display device having any of the above structures, wherein the module is equipped with connectors such as flexible printed circuit boards (FPC) or tape-and-reel packages (TCP), or integrated circuits (ICs) are mounted using methods such as chip-on-glass bonding (COG) or chip-on-film packaging (COF).

[0020] One embodiment of the present invention is an electronic device comprising at least one of the above-described module and antenna, battery, housing, camera, speaker, microphone and operation button.

[0021] According to one embodiment of the present invention, a display device with light detection function can be provided. According to one embodiment of the present invention, a highly convenient display device can be provided. According to one embodiment of the present invention, a multifunctional display device can be provided. According to one embodiment of the present invention, a display device with high display quality can be provided. According to one embodiment of the present invention, a display device with high light detection sensitivity can be provided. According to one embodiment of the present invention, a novel display device can be provided.

[0022] Note that the above description of effects does not preclude the existence of other effects. An embodiment of the present invention does not necessarily need to have all the above-described effects. Effects other than those described above can be extracted from the description in the specification, drawings, and claims. Simple Explanation of the Diagram

[0023] In the diagram: Figures 1A to 1D are cross-sectional views showing an example of a display device. Figures 1E to 1I are top views showing an example of a pixel. [Figure 2A] is a cross-sectional view showing an example of a display device. [Figure 2B] and [Figure 2C] are figures showing an example of the top surface layout of the resin layer. [Figure 3A] and [Figure 3B] are cross-sectional views showing an example of a display device. Figures 4A to 4C are cross-sectional views showing an example of a display device. Figures 5A to 5C are cross-sectional views showing an example of a display device. [Figure 6A] is a top view showing an example of a display device. [Figure 6B] is a cross-sectional view showing an example of a display device. [Figure 7A] and [Figure 7B] are cross-sectional views showing an example of a display device. [Figure 8A] is a top view showing an example of a display device. [Figure 8B] is a cross-sectional view showing an example of a display device. [Figure 9A] is a top view showing an example of a display device. [Figure 9B] is a cross-sectional view showing an example of a display device. [Figure 10A] and [Figure 10B] are cross-sectional views showing an example of a display device. [Figure 11A] and [Figure 11B] are cross-sectional views showing an example of a display device. [Figure 12] is a perspective view showing an example of a display device. [Figure 13] is a cross-sectional view showing an example of a display device. [Figure 14A] and [Figure 14B] are cross-sectional views showing an example of a display device. [Figure 15] is a cross-sectional view showing an example of a display device. [Figure 16A] is a cross-sectional view showing an example of a display device. [Figure 16B] is a cross-sectional view showing an example of a transistor. [Figure 17A] and [Figure 17B] are circuit diagrams illustrating an example of a pixel circuit. [Figure 18A] is a block diagram showing an example of a pixel. [Figure 18B] is a circuit diagram showing an example of a pixel circuit. [Figure 19A] and [Figure 19B] are figures illustrating an example of an electronic device. Figures 20A through 20D are illustrations of an example of an electronic device. Figures 21A through 21F are diagrams illustrating an example of an electronic device. [Figure 22] is a top view photograph of the evaluation device of Example 1. [Figure 23A] and [Figure 23B] are cross-sectional photographs of the evaluation device of Example 1. [Figure 24] is a photograph showing the display result of the display device of Embodiment 1. [Figure 25A] and [Figure 25B] are cross-sectional photographs of the evaluation device of Example 1. [Figure 26] is a diagram showing the device structure of the pixels constituting the display device of Embodiment 2. [Figure 27A] and [Figure 27B] are photographs showing the display results of the display device of Embodiment 2. [Figure 28] is a graph showing the detection results of stray light of the display device of Embodiment 2. [Figure 29] is a graph showing the detection results of stray light of the display device of Embodiment 2. [Figure 30] is a diagram showing the camera optical system of the display device of Embodiment 2. [Figure 31] is a graph showing the calculation results of the camera range of the display device of Embodiment 2. [Figure 32A] and [Figure 32B] are photographs showing the imaging results of the display device of Embodiment 2. [Figure 33] is a graph showing the imaging results of the display device of Embodiment 2. [Figure 34A] is a photograph showing the state of the image captured by the display device of Embodiment 2. [Figure 34B] is a photograph showing the image captured by the display device of Embodiment 2. [Figure 35A] is a photograph showing the state of the image captured using the display device of Embodiment 2. [Figure 35B] is a photograph showing the image captured by the display device of Embodiment 2. [Figure 36] is a graph showing the current density-voltage characteristics of the device in Example 3. [Figure 37A] and [Figure 37B] are graphs showing the current density-voltage characteristics of the device in Example 4. [Figure 38A] and [Figure 38B] are graphs showing the wavelength dependence of the external quantum efficiency of the device of Example 4. [Figure 39] is a graph showing the wavelength dependence of the external quantum efficiency of the device of Example 5. [Figure 40] is a graph showing the temperature dependence of the external quantum efficiency of the device in Example 5. [Figure 41] is a graph showing the wavelength dependence of the external quantum efficiency of the device of Example 6. [Figure 42] is a graph showing the current density-voltage characteristics of the device in Example 6. Figures 43A to 43C are graphs showing the results of reliability tests on the device of Example 7. [Figure 44] is a graph showing the results of reliability testing of the device in Example 7. [Figure 45] is a graph showing the results of reliability testing of the device in Example 7. Implementation

[0024] The embodiments will be described in detail with reference to the accompanying drawings. Note that the present invention is not limited to the following description, and those skilled in the art will readily understand that its methods and details can be varied in many ways without departing from the spirit and scope of the invention. Therefore, the present invention should not be construed as being limited only to the contents described in the embodiments shown below.

[0025] Note that in the invention structure described below, the same symbols are used in different figures to show the same parts or parts with the same function, and repeated descriptions are omitted. Furthermore, when showing parts with the same function, the same shading line is sometimes used without additional symbols.

[0026] Furthermore, for ease of understanding, the positions, sizes, and extents of components shown in the drawings may not always reflect their actual positions, sizes, and extents. Therefore, the disclosed invention is not necessarily limited to the positions, sizes, and extents disclosed in the drawings.

[0027] Furthermore, depending on the context or state, the terms "membrane" and "layer" can be interchanged. For example, "conductive layer" can be changed to "conductive membrane." Similarly, "insulating membrane" can be changed to "insulating layer."

[0028] Note that in this instruction manual, etc., "light-emitting element" may sometimes be replaced with "light-emitting device". Similarly, "light-receiving element" may sometimes be replaced with "light-receiving device".

[0029] Implementation Method 1 In this embodiment, a display device according to one embodiment of the present invention will be described with reference to FIGS. 1 to 16.

[0030] The display device of this embodiment includes a light-receiving element and a light-emitting element in its display section. The display section of this embodiment includes light-emitting elements arranged in a matrix, thereby enabling the display section to display images. Furthermore, the light-receiving elements are arranged in a matrix in this display section, thus the display section also functions as a light-receiving section. The light-receiving section can be used as an image sensor or a touch sensor. That is, by detecting light from the light-receiving section, an image can be captured or the proximity or contact of an object (such as a finger or pen) can be detected. Additionally, the display device of this embodiment can use the light-emitting element as the light source for the sensor. Therefore, it is not necessary to separately provide a light-receiving section and a light source with the display device, thus reducing the number of components in the electronic device.

[0031] In the display device of this embodiment, when the light emitted by the light-emitting element contained in the display section is reflected by an object, the light-receiving element can detect the reflected light, thereby enabling the capture of images or the detection of touch (or even proximity) even in the dark.

[0032] The display device of this embodiment has the function of displaying images using a light-emitting element. That is, the light-emitting element is used as a display element.

[0033] As a light-emitting element, EL devices such as organic light-emitting diodes (OLEDs) or quantum dot light-emitting diodes (QLEDs) are preferred. Examples of light-emitting materials contained in EL devices include fluorescent materials, phosphorescent materials, inorganic compounds (quantum dot materials, etc.), and materials exhibiting thermally activated delayed fluorescence (TADF materials). Alternatively, LEDs such as micro LEDs can also be used as light-emitting elements.

[0034] The display device of this embodiment has the function of detecting emitted light using a light-receiving element.

[0035] When the light-receiving element is used in an image sensor, the display device of this embodiment can capture images using the light-receiving element.

[0036] For example, an image sensor can be used to acquire data such as fingerprints, palm prints, or irises. In other words, a biometric sensor can be installed within the display device of this embodiment. By installing a biometric sensor within the display device, compared to installing the display device and the biometric sensor separately, the number of parts in the electronic device can be reduced, thereby enabling miniaturization and weight reduction of the electronic device.

[0037] Furthermore, image sensors can be used to acquire data such as changes in a user's facial expressions, gaze, or pupil diameter. By analyzing this data, information about the user's physical and mental state can be obtained. By modifying one or both of the video and audio outputs based on this information, users can safely use devices such as virtual reality (VR), augmented reality (AR), and mixed reality (MR) devices.

[0038] Furthermore, when the light-receiving element is used as a touch sensor, the display device of this embodiment uses the light-receiving element to detect the approach or contact of an object.

[0039] As a light-receiving element, for example, a pn-type or pin-type photodiode can be used. The light-receiving element is used as a photoelectric conversion element to generate charge by detecting the light incident on it. The amount of charge generated depends on the amount of incident light.

[0040] In particular, organic photodiodes with a layer containing organic compounds are preferred as light-receiving elements. Organic photodiodes are easy to make thin, lightweight and large-area, and have high flexibility in shape and design, thus they can be applied to a wide variety of display devices.

[0041] In one embodiment of the present invention, an organic EL element is used as the light-emitting element, and an organic photodiode is used as the light-receiving element. The organic EL element and the organic photodiode can be formed on the same substrate. Therefore, the organic photodiode can be installed in a display device using an organic EL element.

[0042] In one embodiment of the present invention, light emitted from the light-emitting element is extracted on the display surface of the display device, and light illuminating the light-receiving element passes through the display surface. Preferably, the display device includes a light-shielding layer on a side closer to the display surface than the surface where the light-emitting element and the light-receiving element are disposed. Preferably, the light emitted from the light-emitting element is extracted to the outside of the display device through an opening in the light-shielding layer (or an area where no light-shielding layer is disposed), and preferably, light is irradiated onto the light-receiving element through the opening in the light-shielding layer (or an area where no light-shielding layer is disposed).

[0043] The light-receiving element detects light emitted by the light-emitting element that is reflected by an object. However, sometimes the light emitted by the light-emitting element is reflected within the display device and enters the light-receiving element without passing through an object. This stray light becomes noise during light detection, leading to a decrease in the signal-to-noise ratio. By placing a light-shielding layer closer to the display surface than the surface where the light-emitting and light-receiving elements are located, the influence of stray light can be suppressed. This reduces noise and improves the sensitivity of the sensor using the light-receiving element.

[0044] When the light-shielding layer is close to the light-emitting element, stray light from the light-emitting element within the display device can be suppressed, thereby improving the sensor's sensitivity. Furthermore, when the light-shielding layer is close to the light-emitting element, the decrease in contrast and color variations when viewing the display device from an angle can be suppressed, thus improving the display's viewing angle characteristics. On the other hand, when the light-shielding layer is far from the light-receiving element, the area of ​​the light-receiving element's imaging range can be reduced, thereby improving the image resolution.

[0045] Therefore, in one embodiment of the present invention, to differentiate the distance between the light-shielding layer and the light-receiving element and the distance between the light-shielding layer and the light-emitting element, a structure (e.g., a resin layer) is provided on the surface where the light-shielding layer is formed. By adjusting the layout and thickness of the structure, the distance between the light-shielding layer and the light-receiving element can be increased and the distance between the light-shielding layer and the light-emitting element can be shortened. Therefore, sensor noise can be reduced, image resolution improved, and viewing angle dependence of the display suppressed. Thus, both the display quality and image quality of the display device can be improved.

[0046] Specifically, one embodiment of the present invention includes a display device comprising a first substrate, a second substrate, a light-receiving element, a light-emitting element, a resin layer, and a light-shielding layer. The light-receiving element, the light-emitting element, the resin layer, and the light-shielding layer are each located between the first substrate and the second substrate. The light-receiving element includes a first pixel electrode on the first substrate, an active layer on the first pixel electrode, and a common electrode on the active layer. The light-emitting element includes a second pixel electrode on the first substrate, a light-emitting layer on the second pixel electrode, and a common electrode on the light-emitting layer. The resin layer and the light-shielding layer are each located between the common electrode and the second substrate. The resin layer includes a portion overlapping the light-emitting element. The light-shielding layer includes a portion located between the common electrode and the resin layer.

[0047] At least a portion of the light emitted by the light-emitting element is extracted to the outside of the second substrate through the resin layer. At least a portion of the light that has passed through the second substrate is incident on the light-receiving element without passing through the resin layer. For example, the resin layer includes an opening that overlaps with the light-receiving element. Furthermore, the resin layer is configured in an island shape at the location where it overlaps with the light-emitting element.

[0048] The resin layer is positioned where it overlaps with the light-emitting element, but not where it overlaps with the light-receiving element. Therefore, the distance between the light-shielding layer and the light-emitting element is shorter than the distance between the light-shielding layer and the light-receiving element. This improves both the display quality and the image quality of the display device.

[0049] Furthermore, when all the layers constituting the organic EL element and the organic photodiode are manufactured separately, the film deposition process is very complex. Since the organic photodiode includes multiple layers that can have the same structure as the organic EL element, forming layers with the same structure as the organic EL element in a single step can reduce the increase in film deposition processes. In addition, even if the number of film depositions is the same, by reducing the number of layers formed in only some elements, the effects of film deposition pattern misalignment and debris (including tiny foreign matter called particles) adhering to the film deposition mask (such as a metal mask) can be reduced. As a result, the yield of the display device can be improved.

[0050] For example, preferably, at least one of the hole injection layer, hole transport layer, electron transport layer, and electron injection layer is a layer shared between the light-receiving element and the light-emitting element. This reduces the number of film deposition steps and masking layers, thereby reducing the manufacturing process and cost of the display device. Note that sometimes the layers shared by the light-receiving element and the light-emitting element have different functions in the two elements. In this specification, structural elements are referred to according to their function in the light-emitting element. For example, the hole injection layer is used as a hole injection layer in the light-emitting element and as a hole transport layer in the light-receiving element. Similarly, the electron injection layer is used as an electron injection layer in the light-emitting element and as an electron transport layer in the light-receiving element.

[0051] Figures 1A to 1D show cross-sectional views of a display device according to one embodiment of the present invention.

[0052] The display device 50A shown in Figure 1A includes a layer 53 having a light-receiving element and a layer 57 having a light-emitting element between substrate 51 and substrate 59.

[0053] The display device 50B shown in Figure 1B includes a layer 53 having a light-receiving element, a layer 55 having a transistor, and a layer 57 having a light-emitting element between substrates 51 and 59.

[0054] Display devices 50A and 50B emit red (R), green (G), and blue (B) light from layer 57, which has light-emitting elements.

[0055] One embodiment of the display device of the present invention has a plurality of pixels arranged in a matrix. Each pixel has one or more sub-pixels. Each sub-pixel has a light-emitting element. For example, a pixel may have a structure with three sub-pixels (three colors R, G, B or three colors yellow (Y), cyan (C), and magenta (M), etc.) or a structure with four sub-pixels (four colors R, G, B, and white (W) or four colors R, G, B, and Y, etc.). Furthermore, the pixel has a light-receiving element. The light-receiving element may be provided in all pixels or in a portion of the pixels. In addition, a pixel may also have multiple light-receiving elements.

[0056] Layer 55, which has a transistor, preferably has a first transistor and a second transistor. The first transistor is electrically connected to the light-receiving element. The second transistor is electrically connected to the light-emitting element.

[0057] One embodiment of the display device of the present invention may also have the function of detecting objects such as fingers that are in contact with the display device. For example, as shown in FIG1C, light emitted by the light-emitting element in layer 57 having a light-emitting element is reflected by a finger 52 that is in contact with the display device 50B, so that the light-receiving element in layer 53 having a light-receiving element detects the reflected light. Thus, the finger 52 in contact with the display device 50B can be detected.

[0058] As shown in Figure 1D, the display device of one embodiment of the present invention may also have the function of detecting or photographing objects that approach the display device 50B (without contact).

[0059] [pixel] Figures 1E to 1I show an example of a pixel.

[0060] The pixels shown in Figures 1E to 1G consist of three sub-pixels (R, G, and B, representing three light-emitting elements) and a light-receiving element (PD). In the example of Figure 1E, the three sub-pixels and the PD are arranged in a 2×2 matrix. In the example of Figure 1F, the three sub-pixels and the PD are arranged in a horizontal row. In the example of Figure 1G, the three sub-pixels are arranged in a horizontal row, with the PD positioned below them. In other words, each pixel shown in Figures 1E to 1G consists of four sub-pixels: three for display and one for light detection.

[0061] The pixel shown in Figure 1H includes four sub-pixels (four light-emitting elements) of R, G, B, and W, and a light-receiving element PD.

[0062] The pixel shown in Figure 1I includes three sub-pixels (R, G, B), an infrared light-emitting element (IR), and a light-receiving element (PD). Preferably, the light-receiving element (PD) has the function of detecting infrared light. The light-receiving element (PD) can also have the function of detecting both visible and infrared light. The wavelength of the light detected by the light-receiving element (PD) can be determined according to the application of the sensor.

[0063] Hereinafter, with reference to Figures 2 to 11, the detailed structure of the light-emitting element and the light-receiving element included in a display device according to an embodiment of the present invention will be described.

[0064] The display device of one embodiment of the present invention may employ a top emission structure that emits light to the side opposite to the substrate on which the light-emitting element is formed, a bottom emission structure that emits light to the side of the substrate on which the light-emitting element is formed, or a double-sided emission structure that emits light to one side of both surfaces.

[0065] Figures 2 to 11 illustrate the top-emitting display device as an example.

[0066] This embodiment primarily describes a display device comprising a light-emitting element that emits visible light and a light-receiving element that detects visible light. However, the display device may also include a light-emitting element that emits infrared light. Furthermore, the light-receiving element may have a structure that detects infrared light or a structure that detects both visible and infrared light.

[0067] [Display device 10A] Figure 2A shows a cross-sectional view of the display device 10A.

[0068] The display device 10A includes a light-receiving element 110 and a light-emitting element 190.

[0069] The light-emitting element 190 includes a pixel electrode 191, a buffer layer 192, a light-emitting layer 193, a buffer layer 194, and a common electrode 115. The light-emitting layer 193 contains an organic compound. The light-emitting element 190 has the function of emitting visible light. Furthermore, the display device 10A may also include a light-emitting element that has the function of emitting infrared light. In this embodiment, the example will be described where the pixel electrode 191 is used as the anode and the common electrode 115 is used as the cathode.

[0070] The light-receiving element 110 includes a pixel electrode 181, a buffer layer 182, an active layer 183, a buffer layer 184, and a common electrode 115. The active layer 183 contains an organic compound. The light-receiving element 110 has the function of detecting visible light. In addition, the light-receiving element 110 may also have the function of detecting infrared light. In this embodiment, similar to the light-emitting element 190, the case where the pixel electrode 181 is used as the anode and the common electrode 115 is used as the cathode will be described. That is, by applying a reverse bias voltage between the pixel electrode 181 and the common electrode 115 to drive the light-receiving element 110, the display device 10A can detect the light incident on the light-receiving element 110 to generate a charge, thereby extracting it as current.

[0071] Pixel electrode 181, pixel electrode 191, buffer layer 182, buffer layer 192, active layer 183, light-emitting layer 193, buffer layer 184, buffer layer 194 and common electrode 115 can each have a single-layer structure or a stacked structure.

[0072] Pixel electrode 181 and pixel electrode 191 are located on insulating layer 214. Pixel electrode 181 and pixel electrode 191 can be formed using the same material and the same process. The ends of pixel electrode 181 and pixel electrode 191 are each covered by a partition wall 216. Pixel electrode 181 and pixel electrode 191 are electrically insulated from each other (also referred to as electrically separated) by partition wall 216.

[0073] The separator 216 is preferably made of an organic insulating film. Materials suitable for use as organic insulating films include, for example, acrylic resin, polyimide resin, epoxy resin, polyimide resin, silicone resin, benzocyclobutene resin, phenolic resin, and precursors of these resins. Separator 216 is a layer that allows visible light to pass through. Although detailed descriptions follow, a separator 217 that blocks visible light can also be used instead of separator 216.

[0074] A buffer layer 182 is located on the pixel electrode 181. An active layer 183 is superimposed on the pixel electrode 181 through the buffer layer 182. A buffer layer 184 is located on the active layer 183. The active layer 183 is superimposed on the common electrode 115 through the buffer layer 184. The buffer layer 182 may have a hole transport layer. The buffer layer 184 may have an electron transport layer.

[0075] A buffer layer 192 is located on the pixel electrode 191. A light-emitting layer 193 is superimposed on the pixel electrode 191 through the buffer layer 192. A buffer layer 194 is located on the light-emitting layer 193. The light-emitting layer 193 is superimposed on the common electrode 115 through the buffer layer 194. The buffer layer 192 may have one or both of a hole injection layer and a hole transport layer. The buffer layer 194 may have one or both of an electron injection layer and an electron transport layer.

[0076] The common electrode 115 is a layer shared by the light-receiving element 110 and the light-emitting element 190.

[0077] The pair of electrodes included in the light-receiving element 110 and the light-emitting element 190 can use the same material and have the same film thickness. As a result, the manufacturing cost of the display device can be reduced and the manufacturing process can be simplified.

[0078] The display device 10A includes a light-receiving element 110, a light-emitting element 190, a transistor 41, and a transistor 42 between a pair of substrates (substrate 151 and substrate 152).

[0079] In the light-receiving element 110, the buffer layer 182, active layer 183, and buffer layer 184 located between the pixel electrode 181 and the common electrode 115 can each be referred to as an organic layer (a layer containing an organic compound). The pixel electrode 181 preferably has the function of reflecting visible light. The common electrode 115 has the function of allowing visible light to pass through. When the light-receiving element 110 detects infrared light, the common electrode 115 has the function of allowing infrared light to pass through. Furthermore, the pixel electrode 181 preferably has the function of reflecting infrared light.

[0080] The light-receiving element 110 has the function of detecting light. Specifically, the light-receiving element 110 is a photoelectric conversion element that receives light 22 incident from the outside of the display device 10A and converts it into an electrical signal. The light 22 can also be described as the light emitted by the light-emitting element 190 and reflected by an object. In addition, the light 22 can also be incident on the light-receiving element 110 through a lens described later.

[0081] In the light-emitting element 190, the buffer layer 192, the light-emitting layer 193, and the buffer layer 194 located between the pixel electrode 191 and the common electrode 115 can each be referred to as an EL layer. The pixel electrode 191 preferably has the function of reflecting visible light. The common electrode 115 has the function of allowing visible light to pass through. In the case where the display device 10A includes a light-emitting element that emits infrared light, the common electrode 115 has the function of allowing infrared light to pass through. Furthermore, the pixel electrode 191 preferably has the function of reflecting infrared light.

[0082] The light-emitting element included in the display device of this embodiment preferably employs an optical microcavity resonator (microcavity) structure. Therefore, one of the pair of electrodes included in the light-emitting element is preferably an electrode that is both transmissive and reflective to visible light (semi-transmissive, semi-reflective electrode), and the other is preferably an electrode that is reflective to visible light (reflective electrode). When the light-emitting element has a microcavity structure, the light emitted from the light-emitting layer can resonate between the two electrodes, and the light emitted from the light-emitting element can be enhanced.

[0083] Note that a semi-transparent / semi-reflective electrode can be a stacked structure of a reflective electrode and an electrode that is translucent to visible light (also called a transparent electrode). In this specification, the reflective electrode, which is sometimes used as part of the semi-transparent / semi-reflective electrode, is sometimes described as a pixel electrode or a common electrode, and the transparent electrode is described as an optical adjustment layer. However, the transparent electrode (optical adjustment layer) may also be used as a pixel electrode or a common electrode.

[0084] The light transmittance of the transparent electrode is 40% or more. For example, in a light-emitting element, it is preferable to use an electrode with a transmittance of 40% or more for visible light (light with a wavelength of 400 nm or more and less than 750 nm). Furthermore, the reflectance of the semi-transparent / semi-reflective electrode for visible light is 10% or more and less than 95%, preferably 30% or more and less than 80%. The reflectance of the reflective electrode for visible light is 40% or more and less than 100%, preferably 70% or more and less than 100%. Additionally, the resistivity of these electrodes is preferably 1 × 10⁻² Ωcm or less. Furthermore, when a light-emitting element emitting near-infrared light is used in a display device, it is preferable that the transmittance and reflectance of the near-infrared light (light with a wavelength of 750 nm or more and less than 1300 nm) of the electrode are also within the above-mentioned value ranges.

[0085] Buffer layer 192 or buffer layer 194 can also function as an optical adjustment layer. By making the film thickness of buffer layer 192 or buffer layer 194 different, light of a specific color can be enhanced and extracted in each light-emitting element. Note that in the case where the semi-transparent and semi-reflective electrode adopts a stacked structure of reflective electrode and transparent electrode, the optical distance between a pair of electrodes represents the optical distance between a pair of reflective electrodes.

[0086] The light-emitting element 190 has the function of emitting visible light. Specifically, the light-emitting element 190 is an electroluminescent element that emits light toward the substrate 152 side when a voltage is applied between the pixel electrode 191 and the common electrode 115 (refer to light emission 21).

[0087] The light-emitting layer 193 is preferably formed in a manner that does not overlap with the light-receiving element 110. This can suppress the absorption of light 22 by the light-emitting layer 193, thereby increasing the amount of light irradiating the light-receiving element 110.

[0088] The pixel electrode 181 is electrically connected to the source or drain of the transistor 41 through an opening provided in the insulating layer 214.

[0089] The pixel electrode 191 is electrically connected to the source or drain of the transistor 42 through an opening provided in the insulating layer 214. The transistor 42 has the function of controlling the driving of the light-emitting element 190.

[0090] Transistor 41 and transistor 42 are grounded on the same layer (substrate 151 in FIG2A).

[0091] At least a portion of the circuit electrically connected to the light-receiving element 110 is preferably formed using the same materials and processes as the circuit electrically connected to the light-emitting element 190. This reduces the thickness of the display device and simplifies the manufacturing process compared to forming two separate circuits.

[0092] The light-receiving element 110 and the light-emitting element 190 are preferably each covered by a protective layer 116. In FIG. 2A, the protective layer 116 is disposed on and in contact with the common electrode 115. By providing the protective layer 116, impurities such as water can be prevented from mixing into the light-receiving element 110 and the light-emitting element 190, thereby improving the reliability of the light-receiving element 110 and the light-emitting element 190. In addition, an adhesive layer 142 can be used to bond the protective layer 116 and the substrate 152.

[0093] A resin layer 159 is provided on one side of the substrate 151 of the substrate 152. The resin layer 159 is disposed at a position overlapping with the light-emitting element 190, but not at a position overlapping with the light-receiving element 110. In this specification, the position overlapping with the light-emitting element 190 specifically refers to the position overlapping with the light-emitting area of ​​the light-emitting element 190. Similarly, the position overlapping with the light-receiving element 110 specifically refers to the position overlapping with the light-receiving area of ​​the light-receiving element 110.

[0094] As shown in FIG2B, the resin layer 159 is disposed at a position overlapping with the light-emitting element 190 and includes an opening 159p at a position overlapping with the light-receiving element 110. Furthermore, as shown in FIG2C, the resin layer 159 is configured as an island at the position overlapping with the light-emitting element 190 and is not disposed at the position overlapping with the light-receiving element 110.

[0095] A light-shielding layer 158 is provided on one side of substrate 151 of substrate 152 and on one side of substrate 151 of resin layer 159. The light-shielding layer 158 includes openings at the positions where it overlaps with light-emitting element 190 and light-receiving element 110.

[0096] Here, the light-receiving element 110 detects the light emitted by the light-emitting element 190, which is reflected by an object. However, sometimes the light emitted by the light-emitting element 190 is reflected within the display device 10A and incident on the light-receiving element 110 without passing through an object. The light-shielding layer 158 can absorb this stray light to reduce the stray light incident on the light-receiving element 110. For example, the light-shielding layer 158 can absorb stray light 23a reflected by the surface of the substrate 151 side of the substrate 152 after passing through the resin layer 159. Furthermore, the light-shielding layer 158 can absorb stray light 23b before it incident on the resin layer 159. Therefore, the stray light incident on the light-receiving element 110 can be reduced. As a result, noise can be reduced to improve the sensitivity of the sensor using the light-receiving element 110. When the light-shielding layer 158 is close to the light-emitting element 190, stray light can be further reduced, which is especially preferable. Furthermore, when the light-shielding layer 158 is close to the light-emitting element 190, the viewing angle dependence of the display can be suppressed, which is also better from the point of view of improving display quality.

[0097] By providing a light-shielding layer 158, the range of light detected by the light-receiving element 110 can be controlled. When the light-shielding layer 158 is far away from the light-receiving element 110, the imaging range is reduced, thereby improving the resolution of the image.

[0098] When the resin layer 159 includes an opening, the light-shielding layer 158 preferably covers at least a portion of the opening and at least a portion of the side surface of the resin layer 159 exposed in the opening.

[0099] When the resin layer 159 is configured as an island, the light-shielding layer 158 preferably covers at least a portion of the side surface of the resin layer 159.

[0100] Thus, because the light-shielding layer 158 is disposed along the shape of the resin layer 159, the distance between the light-shielding layer 158 and the light-emitting element 190 (specifically, the light-emitting area of ​​the light-emitting element 190) is shorter than the distance between the light-shielding layer 158 and the light-receiving element 110 (specifically, the light-receiving area of ​​the light-receiving element 110). Therefore, sensor noise can be reduced, image resolution can be improved, and viewing angle dependence of the display can be suppressed. As a result, both the display quality and image quality of the display device can be improved.

[0101] The resin layer 159 is a layer through which the light emitted by the light-emitting element 190 is transmitted. Materials used for the resin layer 159 include, for example, acrylic resin, polyimide resin, epoxy resin, polyimide resin, polyimide-polyamide resin, silicone resin, benzocyclobutene resin, phenolic resin, and precursors of these resins. Note that the structure disposed between the substrate 152 and the light-shielding layer 158 is not limited to a resin layer; an inorganic insulating film can also be used. When this structure is thicker, the distance between the light-shielding layer and the light-receiving element differs from the distance between the light-shielding layer and the light-emitting element. Organic insulating films such as resins are easily formed into thick layers, making them suitable for this structure.

[0102] As the light-shielding layer 158, a material that blocks light from the light-emitting element can be used. Preferably, the light-shielding layer 158 absorbs visible light. For example, a black matrix can be formed using a metallic material or a resin material containing pigments (such as carbon black) or dyes. The light-shielding layer 158 can also employ a stacked structure of red, green, and blue filters.

[0103] To compare the distances between the light-shielding layer 158 and the light-receiving element 110 and between the light-shielding layer 158 and the light-emitting element 190, for example, the shortest distance L1 between the end of the light-receiving element 110 side of the light-shielding layer 158 and the common electrode 115 and the shortest distance L2 between the end of the light-emitting element 190 side of the light-shielding layer 158 and the common electrode 115 can be used. Because the shortest distance L2 is shorter than the shortest distance L1, stray light from the light-emitting element 190 can be suppressed, thereby improving the sensitivity of the sensor using the light-receiving element 110. In addition, the viewing angle dependence of the display can be suppressed. Because the shortest distance L1 is longer than the shortest distance L2, the imaging range of the light-receiving element 110 can be reduced, thereby improving the image resolution.

[0104] Furthermore, by having a structure in which the portion of the adhesive layer 142 that overlaps with the light-receiving element 110 is thicker than the portion that overlaps with the light-emitting element 190, the distance between the light-shielding layer 158 and the light-receiving element 110 and the distance between the light-shielding layer 158 and the light-emitting element 190 can be different.

[0105] [Display device 10B] Figure 3A shows a cross-sectional view of the display device 10B. Furthermore, in the description of the display device described later, the same structures as those described previously are sometimes omitted.

[0106] The difference between display device 10B and display device 10A is that display device 10B does not include buffer layer 182 and buffer layer 192, but includes common layer 112.

[0107] The common layer 112 is located on the separator 216, pixel electrode 181, and pixel electrode 191. The common layer 112 is a layer shared by the light-receiving element 110 and the light-emitting element 190. The common layer 112 can be a single-layer structure or a stacked structure.

[0108] As a common layer 112, it can form one or both of a hole injection layer and a hole transport layer. Sometimes the function of the common layer 112 in the light-emitting element 190 is different from its function in the light-receiving element 110. For example, when the common layer 112 includes a hole injection layer, the hole injection layer is used as both a hole injection layer and a hole transport layer in both the light-emitting element 190 and the light-receiving element 110. The common layer 112 can be a single-layer structure or a multilayer structure.

[0109] By using at least a portion of the layers other than the active layer and the emissive layer for both the light-receiving element and the light-emitting element, the manufacturing process of the display device can be reduced, which is therefore preferable.

[0110] [Display Device 10C] Figure 3B shows a cross-sectional view of the display device 10C.

[0111] The difference between display device 10C and display device 10A is that display device 10C does not include buffer layer 184 and buffer layer 194, but includes common layer 114.

[0112] The common layer 114 is located on the separator 216, the active layer 183, and the light-emitting layer 193. The common layer 114 is a layer shared by the light-receiving element 110 and the light-emitting element 190. The common layer 114 can be a single-layer structure or a multilayer structure.

[0113] As a common layer 114, it can form one or both of an electron injection layer and an electron transport layer. Sometimes the function of the common layer 114 in the light-emitting element 190 is different from its function in the light-receiving element 110. For example, when the common layer 114 includes an electron injection layer, the electron injection layer is used as both an electron injection layer and an electron transport layer in both the light-emitting element 190 and the light-receiving element 110. The common layer 114 can be a single-layer structure or a multilayer structure.

[0114] By using at least a portion of the layers other than the active layer and the light-emitting layer for both the light-receiving element and the light-emitting element, the manufacturing process of the display device can be reduced, which is therefore preferable.

[0115] [Display Device 10D] Figure 4A shows a cross-sectional view of the display device 10D.

[0116] The difference between display device 10D and display device 10A is that display device 10D does not include buffer layer 182, buffer layer 192, buffer layer 184 and buffer layer 194, but includes common layer 112 and common layer 114.

[0117] In the display device of this embodiment, the active layer 183 of the light-receiving element 110 uses an organic compound. The layers other than the active layer 183 of the light-receiving element 110 can have the same structure as the light-emitting element 190 (EL). Therefore, by simply adding a process for forming the active layer 183 to the fabrication process of the light-emitting element 190, the light-receiving element 110 can be formed simultaneously with the formation of the light-emitting element 190. Furthermore, the light-emitting element 190 and the light-receiving element 110 can be formed on the same substrate. Therefore, the light-receiving element 110 can be provided within the display device without significantly increasing the number of processes.

[0118] In display device 10D, only the active layer 183 of the light-receiving element 110 and the light-emitting layer 193 of the light-emitting element 190 are formed separately, while other layers can be shared by the light-receiving element 110 and the light-emitting element 190. However, the structure of the light-receiving element 110 and the light-emitting element 190 is not limited to this. In addition to the active layer 183 and the light-emitting layer 193, the light-receiving element 110 and the light-emitting element 190 may also have other separately formed layers (refer to display devices 10A, 10B, and 10C described above). It is preferable that the light-receiving element 110 and the light-emitting element 190 share one or more layers (common layers). Thus, the light-receiving element 110 can be provided in the display device without significantly increasing the manufacturing process.

[0119] [Display Device 10E] Figure 4B shows a cross-sectional view of the display device 10E.

[0120] The difference between display device 10E and display device 10D is that display device 10E does not include substrate 151 and substrate 152, but includes substrate 153, substrate 154, adhesive layer 155 and insulating layer 212.

[0121] The substrate 153 and the insulating layer 212 are bonded together by the adhesive layer 155. The substrate 154 and the protective layer 116 are bonded together by the adhesive layer 142.

[0122] The display device 10E is formed by transferring the insulating layer 212, transistors 41 and 42, light-receiving element 110, and light-emitting element 190, which are formed on the manufacturing substrate, onto substrate 153. Substrate 153 and substrate 154 are preferably flexible. This improves the flexibility of the display device 10E. For example, substrate 153 and substrate 154 are preferably made of resin.

[0123] The following materials can be used as substrates 153 and 154: polyester resins such as polyethylene terephthalate (PET) or polyethylene naphthalate (PEN), polyacrylonitrile resins, acrylic resins, polyimide resins, polymethyl methacrylate resins, polycarbonate (PC) resins, polyether ether (PES) resins, polyamide resins (nylon, aromatic polyamides, etc.), polysiloxane resins, cycloolefin resins, polystyrene resins, polyamide-imide resins, polyurethane resins, polyvinyl chloride resins, polyvinylidene chloride resins, polypropylene resins, polytetrafluoroethylene (PTFE) resins, ABS resins, and cellulose nanofibers, etc. One or both of substrates 153 and 154 can also be made of glass with a thickness that provides flexibility.

[0124] The substrate of the display device in this embodiment can be a thin film with high optical isotropy. Examples of thin films with high optical isotropy include cellulose triacetate (also known as TAC), cyclic olefin polymer (COP) films, cyclic olefin copolymer (COC) films, and acrylic films.

[0125] [Display devices 10F, 10G, 10H] Figure 4C shows a cross-sectional view of display device 10F. Figure 5A shows a cross-sectional view of display device 10G. Figure 5B shows a cross-sectional view of display device 10H.

[0126] In addition to the structure of the display device 10D, the display device 10F also includes a lens 149.

[0127] The display device of this embodiment may also include a lens 149. The lens 149 is disposed at a position overlapping with the light-receiving element 110. In the display device 10F, the lens 149 is disposed in contact with the substrate 152. The lens 149 included in the display device 10F has a convex surface on one side of the substrate 151.

[0128] When both the light-shielding layer 158 and the lens 149 are formed on the same surface of the substrate 152, there is no restriction on their formation order. Although an example of forming the lens 149 first is shown in FIG. 4C, the light-shielding layer 158 may also be formed first. In FIG. 4C, the end of the lens 149 is covered by the light-shielding layer 158.

[0129] The display device 10F employs a structure where light 22 is incident on the light-receiving element 110 via a lens 149. Compared to the case without a lens 149, by providing a lens 149, the shooting range of the light-receiving element 110 can be reduced, thereby suppressing overlap with the shooting range of adjacent light-receiving elements 110. This results in capturing clearer images with less blur. Furthermore, when the shooting range of the light-receiving elements 110 is equal, compared to the case without a lens 149, by providing a lens 149, the size of the pinhole (corresponding to the opening size of the light-shielding layer 158 overlapping with the light-receiving element 110 in FIG. 4C) can be increased. Therefore, by having a lens 149, the amount of light incident on the light-receiving element 110 can be increased.

[0130] Similar to display device 10F, display device 10G shown in FIG5A is also one of the structures in which light 22 is incident on light receiving element 110 through lens 149.

[0131] In the display device 10G, a lens 149 is provided in contact with the top surface of the protective layer 116. The lens 149 included in the display device 10G has a convex surface on one side of the substrate 152.

[0132] The display device 10H shown in Figure 5B has a lens array 146 disposed on the display surface side of the substrate 152. The lenses of the lens array 146 are disposed at positions overlapping with the light-receiving element 110. Preferably, a light-shielding layer 158 is disposed on the surface of the substrate 151 side of the substrate 152.

[0133] As a method for forming lenses for the display device used in this embodiment, lenses such as microlenses can be formed directly on the substrate or on the light-receiving element, or a lens array such as a separately manufactured microlens array can be attached to the substrate.

[0134] The refractive index of the lens is preferably 1.3 or higher and 2.5 or lower. The lens can be formed from at least one of inorganic and organic materials. For example, the lens can use a material containing resin. Furthermore, a material containing at least one of oxides and sulfides can be used for the lens.

[0135] Specifically, resins containing chlorine, bromine, or iodine, resins containing heavy metal atoms, resins containing aromatic heterocycles, and resins containing sulfur can be used in lenses. Alternatively, resins or materials containing nanoparticles with a refractive index higher than that of the resin can be used in lenses. Titanium oxide or zirconium oxide can be used as nanoparticles.

[0136] In addition, cerium oxide, hafnium oxide, lanthanum oxide, magnesium oxide, niobium oxide, tantalum oxide, titanium oxide, yttrium oxide, zinc oxide, oxides containing indium and tin, or oxides containing indium, gallium, and zinc can be used in lenses. Alternatively, zinc sulfide can be used in lenses.

[0137] [Display device 10J] Figure 5C shows a cross-sectional view of the display device 10J.

[0138] The difference between display device 10J and display device 10D is that display device 10J does not include a partition wall 216 that allows visible light to pass through, but includes a partition wall 217 that blocks visible light.

[0139] The separator 217 preferably absorbs the light emitted by the light-emitting element 190. For example, a black matrix can be formed using a resin material containing pigments or dyes as the separator 217. Alternatively, the separator 217 can be formed from a colored insulating layer by using a brown photoresist material.

[0140] In display device 10D (FIG. 4A), light emitted by light-emitting element 190 is sometimes reflected by substrate 152 and partition wall 216, causing the reflected light to enter light-receiving element 110. Furthermore, light emitted by light-emitting element 190 is sometimes reflected by transistors or wiring through partition wall 216, causing the reflected light to enter light-receiving element 110. In display device 10J, by absorbing light through partition wall 217, this reflected light entering light-receiving element 110 can be suppressed. Therefore, noise can be reduced to improve the sensitivity of the sensor using light-receiving element 110.

[0141] The partition wall 217 preferably absorbs at least the wavelength of the light detected by the light-receiving element 110. For example, when the light-receiving element 110 detects green light emitted by the light-emitting element 190, the partition wall 217 preferably absorbs at least the green light. For example, when the partition wall 217 has a red filter, it can absorb green light, thereby suppressing reflected light from entering the light-receiving element 110.

[0142] The light-shielding layer 158 can absorb most of the stray light 23b before it is incident on the resin layer 159. However, sometimes a portion of the stray light 23b is reflected and incident on the separator 217. When the separator 217 has a structure that absorbs stray light 23b, it can suppress stray light 23b from incident on transistors or wiring, etc. Thus, it can suppress stray light 23c from reaching the light-receiving element 110. When the stray light 23b is incident on the light-shielding layer 158 and the separator 217 a large number of times, the amount of light absorbed can be increased, and the amount of stray light 23c reaching the light-receiving element 110 can be minimized. When the resin layer 159 is thicker, the number of times stray light 23b is incident on the light-shielding layer 158 and the separator 217 can be increased, which is preferable.

[0143] Furthermore, by absorbing light through the partition wall 217, stray light 23d directly incident from the light-emitting element 190 onto the partition wall 217 can be absorbed by the partition wall 217. Thus, by providing the partition wall 217, stray light incident onto the light-receiving element 110 can be reduced.

[0144] [Display Device 10K] Figure 6A shows a top view of the display device 10K. Figure 6B shows a cross-sectional view between the dashed lines A1 and A2 in Figure 6A. Figure 7A shows a cross-sectional view between the dashed lines A3 and A4 in Figure 6A.

[0145] In Figure 6A, the area surrounded by the dashed line corresponds to a pixel. A pixel includes a light-receiving element 110, a red light-emitting element 190R, a green light-emitting element 190G, and a blue light-emitting element 190B.

[0146] There are no particular restrictions on the top surface shape of the light-receiving element 110 and the light-emitting elements 190R, 190G, and 190B. As shown in Figure 6A, a hexagonal close-packed structure is used for the pixel layout. This hexagonal layout improves the aperture ratio of the light-receiving element 110 and the light-emitting elements 190R, 190G, and 190B, making it preferable. When viewed from above, the light-receiving area of ​​the light-receiving element 110 is square, and the light-emitting areas of the light-emitting elements 190R, 190G, and 190B are each hexagonal.

[0147] When viewed from above (also known as planar view), the light-receiving element 110 is disposed inside the frame-shaped light-shielding layer 219a. By having the light-shielding layer 219a completely surround the four sides of the light-receiving element 110, stray light incident on the light-receiving element 110 can be suppressed. The frame-shaped light-shielding layer 219a may also have gaps (also known as cuts, interrupted portions, or empty portions).

[0148] When viewed from above, spacer 219b is positioned between the green light-emitting element 190G and the blue light-emitting element 190B.

[0149] As shown in Figures 6B and 7A, the display device 10K includes a light-receiving element 110, a red light-emitting element 190R, a green light-emitting element 190G, and a blue light-emitting element 190B.

[0150] The light-emitting element 190R includes a pixel electrode 191R, a common layer 112, a light-emitting layer 193R, a common layer 114, and a common electrode 115. The light-emitting layer 193R contains an organic compound that emits red light 21R. The light-emitting element 190R has the function of emitting red light.

[0151] The light-emitting element 190G includes a pixel electrode 191G, a common layer 112, a light-emitting layer 193G, a common layer 114, and a common electrode 115. The light-emitting layer 193G contains an organic compound that emits green light 21G. The light-emitting element 190G has the function of emitting green light.

[0152] The light-emitting element 190B includes a pixel electrode 191B, a common layer 112, a light-emitting layer 193B, a common layer 114, and a common electrode 115. The light-emitting layer 193B contains an organic compound that emits blue light 21B. The light-emitting element 190B has the function of emitting blue light.

[0153] The light-receiving element 110 includes a pixel electrode 181, a common layer 112, an active layer 183, a common layer 114, and a common electrode 115. The active layer 183 contains an organic compound. The light-receiving element 110 has the function of detecting visible light.

[0154] The display device 10K includes a light-receiving element 110, a light-emitting element 190R, a light-emitting element 190G, a light-emitting element 190B, a transistor 41, a transistor 42R, a transistor 42G, and a transistor 42B between a pair of substrates (substrate 151 and substrate 152).

[0155] The ends of pixel electrodes 181, 191R, 191G, and 191B are each covered by a partition wall 216.

[0156] Pixel electrode 181 is electrically connected to the source or drain of transistor 41 through an opening in insulating layer 214. Pixel electrode 191R is electrically connected to the source or drain of transistor 42R through an opening in insulating layer 214. Similarly, pixel electrode 191G is electrically connected to the source or drain of transistor 42G through an opening in insulating layer 214. Additionally, pixel electrode 191B is electrically connected to the source or drain of transistor 42B through an opening in insulating layer 214.

[0157] The light-receiving element 110 and the light-emitting elements 190R, 190G and 190B are each covered by a protective layer 116.

[0158] A resin layer 159 is provided on one side of the substrate 151 of the substrate 152. The resin layer 159 is disposed at a position overlapping with the light-emitting elements 190R, 190G, and 190B, but not at a position overlapping with the light-receiving element 110.

[0159] A light-shielding layer 158 is provided on the substrate 151 side of the substrate 152 and the substrate 151 side of the resin layer 159. The light-shielding layer 158 includes openings at each overlapping position with the light-emitting elements 190R, 190G, 190B and at the overlapping position with the light-receiving element 110.

[0160] Viewed from above, the partition wall 216 has a frame-shaped opening. In Figure 6B, the partition wall 216 includes an opening between the light-receiving element 110 and the light-emitting element 190R. Furthermore, a light-shielding layer 219a is provided to cover the opening. Preferably, the light-shielding layer 219a covers the opening of the partition wall 216 and the side surface of the partition wall 216 exposed in the opening. Preferably, the light-shielding layer 219a also covers at least a portion of the top surface of the partition wall 216.

[0161] A structure can be constructed where no opening is provided in the partition wall 216, but a light-shielding layer 219a is provided on the partition wall 216. However, stray light may still pass through the partition wall 216 and enter the light-receiving element 110. By providing an opening in the partition wall 216 and providing the light-shielding layer 219a in a manner that embeds the opening, the stray light passing through the partition wall 216 is absorbed by the light-shielding layer 219a within the opening of the partition wall 216. Therefore, stray light entering the light-receiving element 110 can be suppressed.

[0162] The light-shielding layer 219a is preferably conical. This improves the coverage of the films (common layer 112, common layer 114, common electrode 115, and protective layer 116, etc.) disposed on the light-shielding layer 219a.

[0163] Preferably, the light-shielding layer 219a absorbs at least the wavelength of the light detected by the light-receiving element 110. For example, if the light-receiving element 110 detects green light emitted by the light-emitting element 190G, the light-shielding layer 219a preferably absorbs at least the green light. For example, when the light-shielding layer 219a has a red filter, it can absorb green light, thereby suppressing reflected light from entering the light-receiving element 110. The light-shielding layer 219a can be a black matrix formed using a resin material containing pigments or dyes. The light-shielding layer 219a can also adopt a stacked structure of red, green, and blue filters. Furthermore, as the light-shielding layer 219a, a colored insulating layer can also be formed using a brown photoresist material.

[0164] For example, when the light-receiving element 110 detects green light emitted by the light-emitting element 190G, the light emitted by the light-emitting element 190G is sometimes reflected by the substrate 152 and the partition wall 216, causing the reflected light to enter the light-receiving element 110. Furthermore, the light emitted by the light-emitting element 190G is sometimes reflected through the partition wall 216 by transistors or wiring, causing the reflected light to enter the light-receiving element 110. In the display device 10K, by absorbing light through the light-shielding layer 158 and the light-shielding layer 219a, this reflected light entering the light-receiving element 110 can be suppressed. Therefore, noise can be reduced to improve the sensitivity of the sensor using the light-receiving element 110.

[0165] For example, the light-shielding layer 158 can absorb most of the stray light 23b before it is incident on the resin layer 159. Furthermore, by absorbing the stray light 23b through the light-shielding layer 219a, even if a portion of the stray light 23b is reflected by the light-shielding layer 158, the stray light 23b can be suppressed from incident on transistors or wiring. Thus, stray light reaching the light-receiving element 110 can be suppressed. When the stray light 23b is incident on the light-shielding layer 158 and the light-shielding layer 219a more frequently, the amount of light absorbed can be increased, and the amount of stray light reaching the light-receiving element 110 can be minimized. A thicker resin layer 159 increases the number of times stray light 23b is incident on the light-shielding layer 158 and the partition wall 217, which is preferable. A thicker resin layer 159 also shortens the distance between the light-shielding layer 158 and the light-emitting elements of each color, suppressing viewing angle dependence and thus improving display quality.

[0166] Furthermore, by absorbing light through the light-shielding layer 219a, stray light 23d that is directly incident on the light-emitting element can be absorbed by the light-shielding layer 219a. Thus, by providing the light-shielding layer 219a, stray light incident on the light-receiving element 110 can be reduced.

[0167] By providing a light-shielding layer 158, the range of light detected by the light-receiving element 110 can be controlled. When the light-shielding layer 158 is far away from the light-receiving element 110, the imaging range is reduced, thereby improving the resolution of the image.

[0168] Spacer 219b is located on partition wall 216 and, when viewed from above, between light-emitting element 190G and light-emitting element 190B. Preferably, the top surface of spacer 219b is closer to light-shielding layer 158 than the top surface of light-shielding layer 219a. When the thickness L3 of light-shielding layer 219a is greater than or equal to the sum L4 of the thickness of partition wall 216 and spacer 219b, adhesive layer 142 may not adequately fill the inner side of the frame-shaped light-shielding layer 219a, potentially reducing the reliability of light-receiving element 110 and even display device 10K. Therefore, the sum L4 of the thickness of partition wall 216 and spacer 219b is preferably greater than the thickness L3 of light-shielding layer 219a. This facilitates filling of adhesive layer 142. As shown in FIG7A, in the portion where spacer 219b overlaps with light-shielding layer 158, light-shielding layer 158 can contact protective layer 116 (or common electrode 115).

[0169] [Display device 10L] Figure 7B shows a cross-sectional view of the display device 10L.

[0170] In the display device 10L, the light-emitting elements 190R, 190G, and 190B all include the same light-emitting layer. Figure 7B corresponds to the cross-sectional view between the dotted lines A3-A4 in Figure 6A.

[0171] The light-emitting element 190G shown in Figure 7B includes a pixel electrode 191G, an optical adjustment layer 197G, a common layer 112, a light-emitting layer 113, a common layer 114, and a common electrode 115. The light-emitting element 190B shown in Figure 7B includes a pixel electrode 191B, an optical adjustment layer 197B, a common layer 112, a light-emitting layer 113, a common layer 114, and a common electrode 115. In light-emitting elements 190R, 190G, and 190B, the common layer 112, the light-emitting layer 113, and the common layer 114 have the same structure. For example, the light-emitting layer 113 includes a light-emitting layer 193R that emits red light, a light-emitting layer 193G that emits green light, and a light-emitting layer 193B that emits blue light.

[0172] Note that in Figure 7B, the EL layer is shown by the common layer 112, the light-emitting layer 113, and the common layer 114, but it is not limited to this. The light-emitting element can be a single structure that includes a light-emitting unit between the pixel electrode 191 and the common electrode 115, or it can be a series structure that includes multiple light-emitting units.

[0173] The light-emitting layer 113 is used in conjunction with light-emitting elements that emit light of various colors. The light emitted by light-emitting element 190G is extracted into green light 21G by the color layer CFG. The light emitted by light-emitting element 190B is extracted into blue light 21B by the color layer CFB.

[0174] Light-emitting elements 190G and 190B have the same structure but include optical adjustment layers of different thicknesses. Reflective electrodes are used as pixel electrodes 191G and 191B. A transparent electrode on the reflective electrode can be used as the optical adjustment layer. Preferably, each color light-emitting element includes an optical adjustment layer 197 of different thickness. As shown in FIG. 7B, light-emitting element 190G uses optical adjustment layer 197G to optically adjust the distance between pixel electrode 191G and common electrode 115 such that the optical distance enhances green light. Similarly, light-emitting element 190B uses optical adjustment layer 197B to optically adjust the distance between pixel electrode 191B and common electrode 115 such that the optical distance enhances blue light.

[0175] [Display device 10M] Figure 8A shows a top view of the display device 10M. Figure 8B shows a cross-sectional view between the dashed lines A5 and A6 in Figure 8A.

[0176] The display device 10M shown in Figures 8A and 8B differs from the display device 10K shown in Figures 6A and 7A in that: a light-shielding layer 219a is provided between the green light-emitting element 190G and the blue light-emitting element 190B; and a hollow sealed structure in which space 143 is filled with inert gas is adopted.

[0177] As with display device 10M, light-shielding layer 219a can be disposed between light-emitting element 190R and light-receiving element 110, and between light-emitting element 190G and light-emitting element 190B.

[0178] [Display device 10N] Figure 9A shows a top view of the display device 10N. Figure 9B shows a cross-sectional view between the dashed lines A7 and A8 in Figure 9A. Figure 10A shows a cross-sectional view between the dashed lines A9 and A10 in Figure 9A.

[0179] The cross-sectional structure between the dashed lines A3-A4 in the display device 10N (Fig. 9A) can have the same structure as the display device 10K (Fig. 7A). Furthermore, it can have the same structure as the display device 10M (Fig. 8B).

[0180] In display device 10N, the top surface shape and cross-sectional shape of the light-shielding layer 219a are different from those of display device 10K (Figs. 6A and 6B).

[0181] When viewed from above (also known as in plan view), the light-shielding layer 219a surrounds the four sides of the light-receiving element 110, with one end of the light-shielding layer 219a separated from the other. The gap 220 of the light-shielding layer 219a (also known as a cut, interrupted portion, or empty portion) is located on the side of the red light-emitting element 190R. Here, when the light source used for sensing is only a light-emitting element of a specific color, the gap 220 of the light-shielding layer 219a is preferably located on the side of a light-emitting element different from that used for sensing. For example, in the case of the display device 10N, it is preferable to use a green light-emitting element 190G or a blue light-emitting element 190B for sensing. Therefore, the influence of noise during sensing can be suppressed. Furthermore, when using a green light-emitting element 190G for sensing, as shown in region 230, one end of the light-shielding layer 219a preferably protrudes beyond the green light-emitting element 190G onto the side of the red light-emitting element 190R. Therefore, stray light from the green light-emitting element 190G can be suppressed from entering the light-receiving element 110 through the gap 220.

[0182] The partition wall 216 includes an opening between the light-receiving element 110 and the light-emitting element 190R. Furthermore, a light-shielding layer 219a is provided to cover the opening. Preferably, the light-shielding layer 219a covers the opening of the partition wall 216 and the side surface of the partition wall 216 exposed in the opening. Preferably, the light-shielding layer 219a also covers at least a portion of the top surface of the partition wall 216.

[0183] The light-shielding layer 219a can be inverted conical. The thickness of the organic film and the common electrode 115 disposed on the inverted conical light-shielding layer 219a is sometimes thinned near the side of the light-shielding layer 219a. In addition, voids 160 are sometimes generated near the side of the light-shielding layer 219a.

[0184] Here, viewed from above, with the light-shielding layer 219a completely surrounding the four sides of the light-receiving element 110, the common electrode 115 is disconnected by the light-shielding layer 219a, and the common electrode 115 may be separated into the inner and outer sides of the light-shielding layer 219a. Therefore, by making the top surface of the light-shielding layer 219a shaped to surround the four sides of the light-receiving element 110 with one end of the light-shielding layer 219a separated from the other, and by providing the gap 220, the separation of the common electrode 115 can be suppressed. Thus, display defects in the display device 10N can be suppressed.

[0185] Figure 10A is a cross-sectional view of the gap 220 including the light-shielding layer 219a. Viewed from above, similar in shape to the top surface of the light-shielding layer 219a, the partition wall 216 has openings forming a structure that surrounds the four sides of the light-receiving element 110, with one end separated from the other. Within the gap 220 of the light-shielding layer 219a, the partition wall 216 sequentially comprises a common layer 112, a common layer 114, a common electrode 115, and a protective layer 116.

[0186] [Display device 10P] Figure 10B shows a cross-sectional view of the display device 10P.

[0187] The difference between display device 10P and display device 10N is that display device 10P includes a sidewall 219c that contacts the side of the light-shielding layer 219a.

[0188] In the display device 10P, the top surface shape of the light-shielding layer 219a can be either frame-shaped as shown in Figure 6A, or it can have a gap 220 as shown in Figure 9A.

[0189] By providing a sidewall 219c that contacts the side of the inverted conical light-shielding layer 219a, the coverage of the organic film and the common electrode 115 can be improved, thereby improving the display quality of the display device. By improving the coverage of the common electrode 115, the disconnection or even thinning of the common electrode 115 can be suppressed, thereby suppressing the uneven brightness of the display caused by the voltage drop of the common electrode 115.

[0190] The sidewall 219c can be formed using a material that can be used for the partition wall 216.

[0191] [Display Device 10Q] Figures 11A and 11B show cross-sectional views of display device 10Q. Display device 10Q may have the same top surface structure as display device 10K (Figure 6A). Figure 11A shows a cross-sectional view between the dashed lines A1-A2 in Figure 6A. Figure 11B shows a cross-sectional view between the dashed lines A3-A4 in Figure 6A.

[0192] The main difference between display device 10Q and display device 10K is that display device 10Q does not include partition wall 216 but includes partition wall 217.

[0193] The light-shielding layer 219a is located on the partition wall 217. Unlike the partition wall 216, the partition wall 217 can absorb the light emitted by the light-emitting element, or it can be without an opening. Stray light 23d incident from the light-emitting element onto the partition wall 217 is absorbed by the partition wall 217. Stray light 23d incident from the light-emitting element onto the light-shielding layer 219a is absorbed by the light-shielding layer 219a.

[0194] Spacer 219b is located between light-emitting element 190G and light-emitting element 190B. Preferably, the top surface of spacer 219b is closer to the light-shielding layer 158 than the top surface of the light-shielding layer 219a. When spacer 219b is thinner than the light-shielding layer 219a, the adhesive layer 142 does not adequately fill the inner side of the frame-shaped light-shielding layer 219a, raising concerns about reduced reliability of the light-receiving element 110 and even the display device 10Q. Therefore, spacer 219b is preferably thicker than the light-shielding layer 219a. This facilitates filling the adhesive layer 142. As shown in FIG11B, in the portion where spacer 219b overlaps with the light-shielding layer 158, the light-shielding layer 158 can contact the protective layer 116 (or the common electrode 115).

[0195] The structure of a display device according to one embodiment of the present invention will be described in more detail below with reference to Figures 12 to 16.

[0196] [Display Device 100A] Figure 12 shows a perspective view of the display device 100A, while Figure 13 shows a cross-sectional view of the display device 100A.

[0197] The display device 100A has a structure that attaches a substrate 152 and a substrate 151. In Figure 12, the substrate 152 is indicated by a dashed line.

[0198] Display device 100A includes a display unit 162, circuitry 164, and wiring 165, etc. Figure 12 shows an example in which an IC (integrated circuit) 173 and an FPC 172 are installed in display device 100A. Therefore, the structure shown in Figure 12 can also be referred to as a display module including display device 100A, IC, and FPC.

[0199] For example, a scan line drive circuit can be used as circuit 164.

[0200] Wiring 165 has the function of supplying signals and power to display unit 162 and circuit 164. The signals and power are input to wiring 165 from the outside via FPC 172 or IC 173.

[0201] Figure 12 shows an example of IC 173 being mounted on substrate 151 using methods such as die-glass bonding (COG) or chip-on-film packaging (COF). IC 173 can be, for example, an IC including scan line drive circuitry or signal line drive circuitry. Note that display device 100A and display module do not necessarily need to have an IC mounted on them. Alternatively, IC can be mounted on an FPC using COF or similar methods.

[0202] Figure 13 shows an example of a cross-section of a portion of the display device 100A, including a portion of the area of ​​FPC 172, a portion of the circuit 164, a portion of the display section 162, and a portion of the area including the end.

[0203] The display device 100A shown in Figure 13 includes transistors 201, 205, 206, light-emitting element 190, and light-receiving element 110 between substrates 151 and 152.

[0204] The resin layer 159 and the insulating layer 214 are bonded together with the adhesive layer 142 in between. A solid sealing structure or a hollow sealing structure can be used to seal the light-emitting element 190 and the light-receiving element 110. In Figure 13, the space 143 surrounded by the substrate 152, the adhesive layer 142, and the substrate 151 is filled with an inactive gas (nitrogen, argon, etc.), employing a hollow sealing structure. The adhesive layer 142 may also overlap with the light-emitting element 190 and the light-receiving element 110. Furthermore, the space 143 surrounded by the substrate 152, the adhesive layer 142, and the substrate 151 may also be filled with a resin different from the adhesive layer 142.

[0205] The light-emitting element 190 has a stacked structure in which a pixel electrode 191, a common layer 112, a light-emitting layer 193, a common layer 114, and a common electrode 115 are stacked sequentially from one side of the insulating layer 214. The pixel electrode 191 is connected to the conductive layer 222b of the transistor 206 through an opening formed in the insulating layer 214.

[0206] The partition wall 217 covers the end of the pixel electrode 191. The pixel electrode 191 contains a material that reflects visible light, while the common electrode 115 contains a material that allows visible light to pass through.

[0207] The light-receiving element 110 has a stacked structure in which a pixel electrode 181, a common layer 112, an active layer 183, another common layer 114, and a common electrode 115 are sequentially stacked from one side of the insulating layer 214. The pixel electrode 181 is electrically connected to the conductive layer 222b of the transistor 205 through an opening formed in the insulating layer 214. A partition wall 217 covers the end of the pixel electrode 181. The pixel electrode 181 contains a material that reflects visible light, while the common electrode 115 contains a material that allows visible light to pass through.

[0208] The light-emitting element 190 emits light onto one side of the substrate 152. Furthermore, the light-receiving element 110 receives light through the substrate 152 and the space 143. The substrate 152 is preferably made of a material with high transmittance to visible light.

[0209] Pixel electrode 181 and pixel electrode 191 can be formed using the same material and the same process. Common layer 112, common layer 114, and common electrode 115 are used for both the light-receiving element 110 and the light-emitting element 190. Except for the active layer 183 and the light-emitting layer 193, the light-receiving element 110 and the light-emitting element 190 can share other layers. Therefore, the light-receiving element 110 can be provided within the display device 100A without significantly increasing the manufacturing process.

[0210] A resin layer 159 and a light-shielding layer 158 are disposed on one side of the substrate 151 of the substrate 152. The resin layer 159 is disposed at a position overlapping with the light-emitting element 190, but not at a position overlapping with the light-receiving element 110. The light-shielding layer 158 covers the substrate 151 side of the substrate 152, the side of the resin layer 159, and the substrate 151 side of the resin layer 159. The light-shielding layer 158 includes openings at the positions overlapping with the light-receiving element 110 and the light-emitting element 190. By providing the light-shielding layer 158, the range of light detected by the light-receiving element 110 can be controlled. Furthermore, by providing the light-shielding layer 158, light can be prevented from entering the light-receiving element 110 from the light-emitting element 190 without passing through an object. Thus, a sensor with low noise and high sensitivity can be realized. By providing the resin layer 159, the distance between the light-shielding layer 158 and the light-emitting element 190 can be shorter than the distance between the light-shielding layer 158 and the light-receiving element 110. Therefore, sensor noise can be reduced and display viewing angle dependence can be suppressed. This, in turn, improves both display quality and camera quality.

[0211] The structure of the partition wall 217 and the light-shielding layer 219a in the display device 100A is the same as that in the display device 10Q (Fig. 11A).

[0212] The partition wall 217 covers the ends of the pixel electrode 181 and the pixel electrode 191. A light-shielding layer 219a is provided on the partition wall 217. The light-shielding layer 219a is located between the light-receiving element 110 and the light-emitting element 190. The partition wall 217 and the light-shielding layer 219a are preferably of wavelengths that absorb the light detected by the light-receiving element 110. Therefore, stray light incident on the light-receiving element 110 can be suppressed.

[0213] Transistors 201, 205, and 206 are all disposed on substrate 151. These transistors can be formed using the same material and the same process.

[0214] Insulating layers 211, 213, 215, and 214 are sequentially disposed on substrate 151. A portion of insulating layer 211 serves as the gate insulating layer for each transistor. A portion of insulating layer 213 serves as the gate insulating layer for each transistor. Insulating layer 215 is disposed to cover the transistor. Insulating layer 214 is disposed to cover the transistor and serves as a planarization layer. Furthermore, there is no particular limitation on the number of gate insulating layers and the number of insulating layers covering the transistor; there can be one or more.

[0215] Preferably, at least one of the insulating layers covering the transistor is made of a material that impurities such as water or hydrogen do not easily diffuse. This allows the insulating layer to function as a barrier layer. By employing this structure, the diffusion of impurities from the outside into the transistor can be effectively suppressed, thereby improving the reliability of the display device.

[0216] Inorganic insulating films are preferably used as insulating layers 211, 213, and 215. Examples of inorganic insulating films include silicon nitride films, silicon oxynitride films, silicon oxide films, silicon oxynitride films, aluminum oxide films, and aluminum nitride films. Other examples include hafnium oxide films, yttrium oxide films, zirconium oxide films, gallium oxide films, tantalum oxide films, magnesium oxide films, lanthanum oxide films, cerium oxide films, and neodymium oxide films. Furthermore, two or more of the above-mentioned insulating films may be laminated.

[0217] Here, the barrier properties of organic insulating films are often lower than those of inorganic insulating films. Therefore, it is preferable that the organic insulating film includes an opening near the end of the display device 100A. This can suppress the intrusion of impurities from the end of the display device 100A through the organic insulating film. Alternatively, the organic insulating film can be formed with its end located inside the end of the display device 100A to protect it from exposure at the end of the display device 100A.

[0218] The insulating layer 214 used as the planarization layer is preferably an organic insulating film. Materials suitable for use as organic insulating films include, for example, acrylic resins, polyimide resins, epoxy resins, polyimide resins, polyimide-polyimide resins, silicone resins, benzocyclobutene resins, phenolic resins, and precursors of these resins.

[0219] In region 228 shown in Figure 13, an opening is formed in the insulating layer 214. Therefore, even when an organic insulating film is used as the insulating layer 214, impurities can be prevented from entering the display section 162 from the outside via the insulating layer 214. This improves the reliability of the display device 100A.

[0220] Transistors 201, 205, and 206 include: a conductive layer 221 serving as a gate; an insulating layer 211 serving as a gate insulating layer; conductive layers 222a and 222b serving as a source and drain, respectively; a semiconductor layer 231; an insulating layer 213 serving as a gate insulating layer; and a conductive layer 223 serving as a gate. Here, multiple layers obtained by processing the same conductive film are shaded with the same lines. The insulating layer 211 is located between the conductive layer 221 and the semiconductor layer 231. The insulating layer 213 is located between the conductive layer 223 and the semiconductor layer 231.

[0221] There are no particular limitations on the transistor structure included in the display device of this embodiment. For example, planar transistors, interleaved transistors, or anti-interleaved transistors can be used. Furthermore, the transistors can have a top-gate structure or a bottom-gate structure. Alternatively, gates can be provided above and below the semiconductor layer forming the channel.

[0222] Transistors 201, 205, and 206 employ a structure in which a semiconductor layer forming a channel is sandwiched between two gates. Alternatively, the two gates can be connected, and the transistors can be driven by supplying the same signal to both gates. Or, the critical voltage of the transistors can be controlled by applying a potential to one of the two gates to control the critical voltage and applying a potential to the other to drive it.

[0223] There are no particular restrictions on the crystallinity of the semiconductor material used for transistors; amorphous semiconductors or crystalline semiconductors (microcrystalline semiconductors, polycrystalline semiconductors, single-crystal semiconductors, or semiconductors with crystalline regions in some of their components) can be used. Using crystalline semiconductors can suppress the degradation of transistor characteristics, making them preferable.

[0224] The semiconductor layer of the transistor is preferably made of metal oxide (oxide semiconductor). Alternatively, the semiconductor layer of the transistor may also contain silicon. Examples of silicon include amorphous silicon and crystalline silicon (low-temperature polycrystalline silicon, single-crystal silicon, etc.).

[0225] For example, the semiconductor layer preferably comprises indium, M (M being selected from one or more of gallium, aluminum, silicon, boron, yttrium, tin, copper, vanadium, beryllium, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, or magnesium), and zinc. In particular, M is preferably selected from one or more of aluminum, gallium, yttrium, or tin.

[0226] In particular, as the semiconductor layer, it is preferable to use an oxide (IGZO) containing indium (In), gallium (Ga) and zinc (Zn).

[0227] When the semiconductor layer is an In-M-Zn oxide, it is preferable that the atomic ratio of In in the In-M-Zn oxide is greater than or equal to the atomic ratio of M. Examples of atomic ratios of the metal elements in this In-M-Zn oxide include In:M:Zn = 1:1:1 or similar, In:M:Zn = 1:1:1.2 or similar, In:M:Zn = 2:1:3 or similar, In:M:Zn = 3:1:2 or similar, In:M:Zn = 4:2:3 or similar, In:M:Zn = 4:2:4.1 or similar, In:M:Zn = 5:1:3 or similar, In:M:Zn = 5:1:6 or similar, In:M:Zn = 5:1:7 or similar, In:M:Zn = 5:1:8 or similar, In:M:Zn = 6:1:6 or similar, In:M:Zn = 5:2:5 or similar, etc. Note that "similar" includes a range of ±30% of the desired atomic ratio.

[0228] For example, when the atomic number ratio is described as In:Ga:Zn = 4:2:3 or similar, the following cases are included: when the atomic number ratio of In is 4, the atomic number ratio of Ga is 1 or more and 3 or less, and the atomic number ratio of Zn is 2 or more and 4 or less. Furthermore, when the atomic number ratio is described as In:Ga:Zn = 5:1:6 or similar, the following cases are included: when the atomic number ratio of In is 5, the atomic number ratio of Ga is greater than 0.1 and less than 2, and the atomic number ratio of Zn is 5 or more and less than 7. Furthermore, when the atomic number ratio is described as In:Ga:Zn = 1:1:1 or similar, the following cases are included: when the atomic number ratio of In is 1, the atomic number ratio of Ga is greater than 0.1 and less than 2, and the atomic number ratio of Zn is greater than 0.1 and less than 2.

[0229] The transistors included in circuit 164 and the transistors included in display unit 162 can have the same structure or different structures. Similarly, the multiple transistors included in circuit 164 can have the same structure or two different structures.

[0230] A connection portion 204 is provided in a region of substrate 151 that does not overlap with substrate 152. In the connection portion 204, wiring 165 is electrically connected to FPC 172 via conductive layer 166 and connection layer 242. The conductive layer 166, obtained by processing the same conductive film as pixel electrode 181, is exposed on the top surface of the connection portion 204. Therefore, the connection portion 204 can be electrically connected to FPC 172 via connection layer 242.

[0231] Furthermore, various optical components can be disposed on the outer surface of the substrate 152. These optical components may include polarizing plates, retardation plates, light diffusion layers (diffusion films, etc.), antireflective layers, and condensing films. Additionally, antistatic films that inhibit dust adhesion, water-repellent films that are not easily soiled, hard coatings that prevent damage during use, and buffer layers may also be disposed on the outer surface of the substrate 152.

[0232] Substrate 151 and substrate 152 can be made of glass, quartz, ceramic, sapphire, resin, etc. By using flexible materials for substrate 151 and substrate 152, the flexibility of the display device can be improved.

[0233] As the adhesive layer, various curing adhesives can be used, including UV-curing adhesives, reaction-curing adhesives, thermosetting adhesives, and anaerobic adhesives. Examples of these adhesives include epoxy resins, acrylic resins, silicone resins, phenolic resins, polyimide resins, PVC (polyvinyl chloride) resins, PVB (polyvinyl butyral) resins, and EVA (ethylene vinyl acetate) resins. In particular, materials with low moisture permeability, such as epoxy resins, are preferred. Two-component mixed resins can also be used. Furthermore, adhesive sheets can also be used.

[0234] As the connecting layer 242, anisotropic conductive film (ACF) or anisotropic conductive paste (ACP) can be used.

[0235] The light-emitting element 190 has a top-emitting structure, a bottom-emitting structure, or a double-sided emitting structure. A conductive film that allows visible light to pass through is used as the electrode on the light-extracting side. Alternatively, a conductive film that reflects visible light is preferably used as the electrode on the non-light-extracting side.

[0236] The light-emitting element 190 includes at least a light-emitting layer 193. In addition to the light-emitting layer 193, the light-emitting element 190 may also include layers comprising materials with high hole injection capacity, high hole transport capacity, hole blocking materials, high electron transport capacity, high electron injection capacity, or bipolar materials (materials with both high electron transport capacity and high hole transport capacity). For example, the common layer 112 preferably has one or both of a hole injection layer and a hole transport layer. The common layer 114 preferably has one or both of an electron transport layer and an electron injection layer.

[0237] A hole injection layer is a layer containing a material with high hole injection capability that injects holes from the anode into the light-emitting element. Aromatic amine compounds and composite materials containing hole transport materials and acceptor materials (electron acceptor materials) can be used as materials with high hole injection capability.

[0238] In a light-emitting element, the hole transport layer is a layer that transports holes injected from the anode to the light-emitting layer via the hole injection layer. In a light-receiving element, the hole transport layer is a layer that transports holes generated by light incident on the active layer to the anode. The hole transport layer is a layer containing a hole-transporting material. Preferably, the hole transporting material is a substance with a hole mobility of 10⁻⁶ cm² / Vs or higher. Note that any material other than the one mentioned above can be used as long as the hole transportability is higher than the electron transportability. Preferably, the hole transporting material is a π-electron-rich heteroaromatic compound (e.g., carbazole derivatives, thiophene derivatives, furan derivatives, etc.) or an aromatic amine (a compound containing an aromatic amine skeleton), which has high hole transportability.

[0239] In a light-emitting element, the electron transport layer is a layer that transports electrons injected from the cathode to the light-emitting layer via an electron injection layer. In a light-receiving element, the electron transport layer is a layer that transports electrons generated based on light incident on the active layer to the cathode. The electron transport layer is a layer containing an electron transport material. Preferably, the electron transport material is a material with an electron mobility of 1 × 10⁻⁶ cm² / Vs or higher. Note that materials other than those mentioned above can be used as long as the electron transport capability is higher than the hole transport capability. As electron transport materials, materials with high electron transport properties can be used, such as metal complexes containing a quinoline skeleton, metal complexes containing a benzoquinoline skeleton, metal complexes containing a chloroazole skeleton, metal complexes containing a thiazole skeleton, chlorodiazole derivatives, triazole derivatives, imidazole derivatives, chloroazole derivatives, thiazole derivatives, pheno-line derivatives, quinoline derivatives containing quinoline ligands, benzoquinoline derivatives, quinoline derivatives, dibenzoquinoline derivatives, pyridine derivatives, bipyridine derivatives, pyrimidine derivatives, and nitrogen-containing heteroaromatic compounds, etc.

[0240] An electron injection layer is a layer containing a material with high electron injection capability that injects electrons from the cathode into the light-emitting element. Alkali metals, alkaline earth metals, or compounds containing these substances can be used as materials with high electron injection capability. Composite materials containing both electron transport materials and donor materials (electron donor materials) can also be used as materials with high electron injection capability.

[0241] The common layer 112, the light-emitting layer 193, and the common layer 114 can be made of low-molecular-weight compounds or high-molecular-weight compounds, and may also contain inorganic compounds. The layers constituting the common layer 112, the light-emitting layer 193, and the common layer 114 can be formed by methods such as vapor deposition (including vacuum vapor deposition), transfer printing, printing, inkjet printing, and coating.

[0242] The luminescent layer 193 is a layer containing a luminescent material. The luminescent layer 193 may contain one or more luminescent materials. Suitable luminescent materials include those exhibiting colors such as blue, purple, blue-violet, green, yellow-green, yellow, orange, and red. Furthermore, materials emitting near-infrared light may also be used as luminescent materials.

[0243] The active layer 183 of the light-receiving element 110 contains a semiconductor. Examples of such semiconductors include inorganic semiconductors such as silicon and organic semiconductors containing organic compounds. In this embodiment, an example of using an organic semiconductor as the semiconductor contained in the active layer is shown. By using an organic semiconductor, the light-emitting layer 193 of the light-emitting element 190 and the active layer 183 of the light-receiving element 110 can be formed using the same method (e.g., vacuum evaporation), and both can be manufactured using the same equipment, which is preferable.

[0244] Examples of electron-accepting organic semiconductor materials that can be used as n-type semiconductor materials in the active layer 183 include fullerenes (e.g., C60, C70, etc.) or their derivatives. Examples of electron-donating organic semiconductor materials that can be used as p-type semiconductor materials in the active layer 183 include copper(II) phthalocyanine (CuPc), tetraphenyldibenzoperiflanthene (DBP), or zinc phthalocyanine (ZnPc). Additionally, tin phthalocyanine (SnPc) can be used as a p-type semiconductor material.

[0245] For example, it is preferable to co-deposit an n-type semiconductor and a p-type semiconductor to form an active layer 183.

[0246] Materials that can be used as gates, sources, and drains of transistors, as well as conductive layers such as wiring and electrodes in display devices, include metals such as aluminum, titanium, chromium, nickel, copper, yttrium, zirconium, molybdenum, silver, tantalum, or tungsten, or alloys with the above metals as the main component. Single layers or stacks of films containing these materials can be used.

[0247] Furthermore, as a transparent conductive material, conductive oxides such as indium oxide, indium tin oxide, indium zinc oxide, zinc oxide, and gallium-containing zinc oxide, or graphene, can be used. Alternatively, metallic materials such as gold, silver, platinum, magnesium, nickel, tungsten, chromium, molybdenum, iron, cobalt, copper, palladium, or titanium, or alloys containing such metallic materials, can be used. Alternatively, nitrides of the metallic materials (e.g., titanium nitride) can also be used. Furthermore, when using metallic materials or alloys (or their nitrides), it is preferable to form them thin enough to be transparent. Furthermore, the aforementioned multilayer films can be used as conductive layers. For example, using a multilayer film of an alloy of silver and magnesium with indium tin oxide can improve conductivity, and is therefore preferred. The aforementioned materials can also be used as conductive layers constituting various wirings and electrodes in a display device, and as conductive layers included in display elements (conductive layers used as pixel electrodes and common electrodes).

[0248] Examples of insulating materials that can be used in various insulating layers include resins such as acrylic resin or epoxy resin, and inorganic insulating materials such as silicon oxide, silicon oxynitride, silicon oxynitride, silicon nitride, or aluminum oxide.

[0249] [Display device 100B] Figure 14A shows a cross-sectional view of the display device 100B.

[0250] The main difference between display device 100B and display device 100A is that display device 100B includes a protective layer 116 and adopts a solid sealing structure.

[0251] By providing a protective layer 116 covering the light-receiving element 110 and the light-emitting element 190, impurities such as water can be prevented from mixing into the light-receiving element 110 and the light-emitting element 190, thereby improving the reliability of the light-receiving element 110 and the light-emitting element 190.

[0252] In the region 228 near the end of the display device 100B, it is preferable that the insulating layer 215 and the protective layer 116 are in contact with each other through an opening in the insulating layer 214. In particular, it is especially preferable that the inorganic insulating film contained in the insulating layer 215 and the inorganic insulating film contained in the protective layer 116 are in contact with each other. This can suppress impurities from entering the display section 162 from the outside through the organic insulating film. Therefore, the reliability of the display device 100B can be improved.

[0253] Figure 14B shows an example of a protective layer 116 having a three-layer structure. In Figure 18B, the protective layer 116 includes an inorganic insulating layer 116a on the common electrode 115, an organic insulating layer 116b on the inorganic insulating layer 116a, and an inorganic insulating layer 116c on the organic insulating layer 116b.

[0254] The ends of inorganic insulating layer 116a and inorganic insulating layer 116c extend to the outside of the end of organic insulating layer 116b, and they are in contact with each other. Furthermore, inorganic insulating layer 116a contacts insulating layer 215 (inorganic insulating layer) through an opening in insulating layer 214 (organic insulating layer). Thus, insulating layer 215 and protective layer 116 can be used to surround light-receiving element 110 and light-emitting element 190, improving the reliability of light-receiving element 110 and light-emitting element 190.

[0255] In this way, the protective layer 116 can also have a laminated structure of an organic insulating film and an inorganic insulating film. In this case, the end of the inorganic insulating film preferably extends to the outside of the end of the organic insulating film.

[0256] Furthermore, in the display device 100B, the protective layer 116 and the substrate 152 are bonded together by an adhesive layer 142. The adhesive layer 142 overlaps with the light-receiving element 110 and the light-emitting element 190, and the display device 100B adopts a solid sealing structure.

[0257] [Display Device 100C] Figures 15 and 16A show cross-sectional views of display device 100C. The perspective view of display device 100C is the same as that of display device 100A (Figure 12). Figure 15 shows an example of a cross-section of a portion of the area including FPC 172, a portion of circuitry 164, and a portion of display unit 162 in display device 100C. Figure 16A shows an example of a cross-section of a portion of display unit 162 in display device 100C. Figure 15 particularly shows an example of a cross-section of the area including light-receiving element 110 and light-emitting element 190R emitting red light in display unit 162. Figure 16A particularly shows an example of a cross-section of the area including light-emitting element 190G emitting green light and light-emitting element 190B emitting blue light in display unit 162.

[0258] The display device 100C shown in Figures 15 and 16A includes transistors 203, 207, 208, 209, and 210, light-emitting elements 190R, 190G, and 190B, and light-receiving elements 110 between substrates 153 and 154.

[0259] The resin layer 159 and the common electrode 115 are bonded together through the adhesive layer 142, and the display device 100C has a solid sealing structure.

[0260] The substrate 153 and the insulating layer 212 are bonded together by the adhesive layer 155. The substrate 154 and the insulating layer 157 are bonded together by the adhesive layer 156.

[0261] The manufacturing method of the display device 100C is as follows. First, a first manufacturing substrate, on which an insulating layer 212, transistors, light-receiving elements 110, and light-emitting elements are disposed, and a second manufacturing substrate, on which an insulating layer 157, a resin layer 159, and a light-shielding layer 158 are disposed, are bonded together by an adhesive layer 142. Then, a substrate 153 is bonded to the surface exposed after peeling off the first manufacturing substrate, and a substrate 154 is bonded to the surface exposed after peeling off the second manufacturing substrate, thereby transferring the components formed on the first and second manufacturing substrates to substrates 153 and 154. Preferably, substrates 153 and 154 are each flexible. Therefore, the flexibility of the display device 100C can be improved.

[0262] Insulating layers 212 and 157 can each use an inorganic insulating film that can be used in insulating layers 211, 213 and 215.

[0263] The light-emitting element 190R has a stacked structure in which a pixel electrode 191R, a common layer 112, a light-emitting layer 193R, a common layer 114, and a common electrode 115 are sequentially stacked from the insulating layer 214b side. The pixel electrode 191R is connected to the conductive layer 169R through an opening formed in the insulating layer 214b. The conductive layer 169R is connected to the conductive layer 222b included in the transistor 208 through an opening formed in the insulating layer 214a. The conductive layer 222b is connected to the low-resistance region 231n through an opening formed in the insulating layer 215. That is, the pixel electrode 191R is electrically connected to the transistor 208. The transistor 208 has the function of controlling the driving of the light-emitting element 190R.

[0264] Similarly, the light-emitting element 190G has a stacked structure in which a pixel electrode 191G, a common layer 112, a light-emitting layer 193G, a common layer 114, and a common electrode 115 are sequentially stacked from the insulating layer 214b side. The pixel electrode 191G is electrically connected to the low-resistance region 231n of the transistor 209 via the conductive layer 169G and the conductive layer 222b of the transistor 209. That is, the pixel electrode 191G is electrically connected to the transistor 209. The transistor 209 has the function of controlling the driving of the light-emitting element 190G.

[0265] Furthermore, the light-emitting element 190B has a stacked structure in which a pixel electrode 191B, a common layer 112, a light-emitting layer 193B, a common layer 114, and a common electrode 115 are sequentially stacked from the insulating layer 214b side. The pixel electrode 191B is electrically connected to the low-resistance region 231n of the transistor 210 via the conductive layer 169B and the conductive layer 222b of the transistor 210. That is, the pixel electrode 191B is electrically connected to the transistor 210. The transistor 210 has the function of controlling the driving of the light-emitting element 190B.

[0266] The light-receiving element 110 has a stacked structure in which a pixel electrode 181, a common layer 112, an active layer 183, a common layer 114, and a common electrode 115 are sequentially stacked from the insulating layer 214b side. The pixel electrode 181 is electrically connected to the low-resistance region 231n of the transistor 207 via the conductive layer 168 and the conductive layer 222b of the transistor 207. That is, the pixel electrode 181 is electrically connected to the transistor 207.

[0267] The partition wall 216 covers the ends of the pixel electrodes 181, 191R, 191G, and 191B. The pixel electrodes 181, 191R, 191G, and 191B contain a material that reflects visible light, while the common electrode 115 contains a material that allows visible light to pass through.

[0268] Light-emitting elements 190R, 190G, and 190B emit light onto one side of substrate 154. Additionally, light-receiving element 110 receives light via substrate 154 and adhesive layer 142. Substrate 154 is preferably made of a material with high transmittance to visible light.

[0269] Pixel electrodes 181 and 191 can be formed using the same material and the same process. Common layers 112 and 114, and common electrode 115 are shared by the light-receiving element 110 and the light-emitting elements 190R, 190G, and 190B. Except for the active layer 183 and the light-emitting layer, the light-receiving element 110 and the light-emitting elements of various colors can share other layers. Therefore, the light-receiving element 110 can be provided within the display device 100C without significantly increasing the manufacturing process.

[0270] A resin layer 159 and a light-shielding layer 158 are disposed on one side of the substrate 153 of the insulating layer 157. The resin layer 159 is disposed at the position overlapping with the light-emitting elements 190R, 190G, and 190B, but not at the position overlapping with the light-receiving element 110. The light-shielding layer 158 covers the substrate 153 side of the insulating layer 157, the side of the resin layer 159, and the substrate 153 side of the resin layer 159. The light-shielding layer 158 includes openings at the positions overlapping with the light-receiving element 110 and at each of the overlapping positions with the light-emitting elements 190R, 190G, and 190B. By providing the light-shielding layer 158, the range of light detected by the light-receiving element 110 can be controlled. Furthermore, by providing the light-shielding layer 158, light from the light-emitting elements 190R, 190G, and 190B can be prevented from entering the light-receiving element 110 without passing through an object. Thus, a sensor with low noise and high sensitivity can be realized. Because of the resin layer 159, the distance between the light-shielding layer 158 and the light-emitting elements of each color is shorter than the distance between the light-shielding layer 158 and the light-receiving element 110. Therefore, sensor noise can be reduced and viewing angle dependence of the display can be suppressed. This improves both display quality and image quality.

[0271] The structure of the partition wall 216, the light-shielding layer 219a, and the spacer 219b in the display device 100C is the same as that in the display device 10K (Figs. 6B and 7A).

[0272] In Figure 15, the partition wall 216 includes an opening between the light-receiving element 110 and the light-emitting element 190R. A light-shielding layer 219a is provided embedded in this opening. The light-shielding layer 219a is located between the light-receiving element 110 and the light-emitting element 190R. The light-shielding layer 219a absorbs the light emitted by the light-emitting element 190R. Therefore, stray light incident on the light-receiving element 110 can be suppressed.

[0273] Spacer 219b is located between light-emitting element 190G and light-emitting element 190B. Preferably, the top surface of spacer 219b is closer to light-shielding layer 158 than the top surface of light-shielding layer 219a. For example, the sum of the height (thickness) of partition wall 216 and the height (thickness) of spacer 219b is preferably greater than the height (thickness) of light-shielding layer 219a. Therefore, it is easy to fill adhesive layer 142. As shown in FIG16A, in the portion where spacer 219b overlaps with light-shielding layer 158, light-shielding layer 158 can contact common electrode 115 (or protective layer).

[0274] A connection portion 204 is provided in a region of substrate 153 that does not overlap with substrate 154. In the connection portion 204, wiring 165 is electrically connected to FPC 172 via conductive layer 167, conductive layer 166, and connection layer 242. Conductive layer 167 and conductive layer 168 can be obtained by processing the same conductive film. Conductive layer 166, obtained by processing the same conductive film as pixel electrode 181, is exposed on the top surface of the connection portion 204. Therefore, the connection portion 204 can be electrically connected to FPC 172 via connection layer 242.

[0275] Transistors 207, 208, 209, and 210 include: a conductive layer 221 serving as a gate; an insulating layer 211 serving as a gate insulating layer; a semiconductor layer comprising a channel forming region 231i and a pair of low-resistance regions 231n; a conductive layer 222a connected to one of the pair of low-resistance regions 231n; a conductive layer 222b connected to the other of the pair of low-resistance regions 231n; an insulating layer 225 serving as a gate insulating layer; a conductive layer 223 serving as a gate; and an insulating layer 215 covering the conductive layer 223. The insulating layer 211 is located between the conductive layer 221 and the channel forming region 231i. The insulating layer 225 is located between the conductive layer 223 and the channel forming region 231i.

[0276] Conductive layers 222a and 222b are connected to the low-resistance region 231n through openings provided in the insulating layer 215. One of the conductive layers 222a and 222b serves as a source, and the other serves as a drain.

[0277] In Figure 15, the insulating layer 225 overlaps with the channel forming region 231i of the semiconductor layer 231 but not with the low-resistance region 231n. For example, the structure shown in Figure 15 can be formed by processing the insulating layer 225 with the conductive layer 223 as a mask. In Figure 15, the insulating layer 215 covers the insulating layer 225 and the conductive layer 223, and the conductive layers 222a and 222b are respectively connected to the low-resistance region 231n through the openings in the insulating layer 215. Furthermore, a protective layer 116 covering the transistor can also be provided.

[0278] On the other hand, in the example of transistor 202 shown in FIG16B, insulating layer 225 covers the top and side surfaces of semiconductor layer. Conductive layers 222a and 222b are connected to low-resistance region 231n through openings provided in insulating layers 225 and 215.

[0279] [Metal Oxides] The following will describe metal oxides that can be used in semiconductor layers.

[0280] In this specification and other materials, nitrogen-containing metal oxides are sometimes referred to as metal oxides. Furthermore, nitrogen-containing metal oxides may also be referred to as metal oxynitrides. For example, nitrogen-containing metal oxides such as zinc oxynitride (ZnON) can be used in semiconductor layers.

[0281] In this specification and other materials, it is sometimes referred to as CAAC (c-axis aligned crystal) or CAC (Cloud-Aligned Composite). CAAC refers to an example of a crystalline structure, while CAC refers to an example of a function or material composition.

[0282] For example, CAC (Cloud-Aligned Composite)-OS (Oxide Semiconductor) can be used as a semiconductor layer.

[0283] CAC-OS or CAC-metal oxide possesses conductive properties in one part of the material and insulating properties in another, thus functioning as a semiconductor as a whole. Furthermore, when CAC-OS or CAC-metal oxide is used as the semiconductor layer of a transistor, the conductive function allows electrons (or holes) used as carriers to flow through, while the insulating function prevents electrons from flowing through. Through the complementary effects of conductive and insulating functions, CAC-OS or CAC-metal oxide can possess a switching function (on / off function). By separating these functions within CAC-OS or CAC-metal oxide, each function can be maximized.

[0284] Furthermore, CAC-OS or CAC-metal oxide comprises conductive and insulating regions. The conductive regions possess the aforementioned conductive properties, and the insulating regions possess the aforementioned insulating properties. Moreover, in the material, the conductive and insulating regions are sometimes separated at the nanoparticle level. Furthermore, the conductive and insulating regions are sometimes unevenly distributed within the material. Additionally, conductive regions with blurred edges and cloud-like connections are sometimes observed.

[0285] Furthermore, in CAC-OS or CAC-metal oxide, conductive and insulating regions are sometimes dispersed in the material with a size of 0.5 nm or more and 10 nm or less, preferably 0.5 nm or more and 3 nm or less.

[0286] Furthermore, CAC-OS or CAC-metal oxide is composed of components with different band gaps. For example, CAC-OS or CAC-metal oxide is composed of a component with a wide gap originating from an insulating region and a component with a narrow gap originating from a conductive region. In this configuration, when carriers flow through, they mainly flow through the component with the narrow gap. Moreover, the component with the narrow gap, through complementary interaction with the component with the wide gap, causes carriers to flow through the component with the wide gap. Therefore, when the aforementioned CAC-OS or CAC-metal oxide is used in the channel forming region of a transistor, a high current driving force, i.e., a large on-state current and a high field-effect mobility, can be obtained in the transistor's conducting state.

[0287] In other words, CAC-OS or CAC-metal oxide can also be referred to as matrix composite or metal matrix composite.

[0288] Oxide semiconductors (metal oxides) are classified into single-crystal oxide semiconductors and non-single-crystal oxide semiconductors. Examples of non-single-crystal oxide semiconductors include CAAC-OS (c-axis aligned crystalline oxide semiconductor), polycrystalline oxide semiconductors, nc-OS (nanocrystalline oxide semiconductor), a-like OS (amorphous-like oxide semiconductor), and amorphous oxide semiconductors.

[0289] CAAC-OS exhibits c-axis alignment, with its multiple nanocrystals connected along the ab-plane direction, resulting in a distorted crystal structure. Note that distortion refers to the change in the orientation of the lattice arrangement between regions with consistent lattice alignment and other regions with consistent lattice alignment within the region where multiple nanocrystals are connected.

[0290] Although nanocrystals are primarily hexagonal, they are not limited to regular hexagons; some are not. Furthermore, pentagonal or heptagonal lattice arrangements are sometimes observed in distortions. Moreover, in CAAC-OS, no clear grain boundaries are observed even near the distortion. That is, it can be seen that lattice distortion can suppress grain boundary formation. This is because CAAC-OS can contain distortions due to the low density of oxygen atoms along the ab plane or changes in the bonding distance between atoms caused by the substitution of metal elements.

[0291] CAAC-OS tends to have a layered crystalline structure (also called a layered structure), in which layers containing indium and oxygen (hereinafter referred to as In layers) and layers containing elements M, zinc, and oxygen (hereinafter referred to as (M,Zn) layers) are stacked. Furthermore, indium and element M can substitute for each other; when element M in a (M,Zn) layer is replaced by indium, the layer can also be represented as an (In,M,Zn) layer. Similarly, when indium in an In layer is replaced by element M, the layer can also be represented as an (In,M) layer.

[0292] CAAC-OS is a highly crystalline metal oxide. Furthermore, distinct grain boundaries are not readily observed in CAAC-OS, thus reducing the likelihood of a decrease in electron mobility due to grain boundaries. Additionally, the crystallinity of metal oxides can sometimes decrease due to the introduction of impurities or the formation of defects; therefore, CAAC-OS can be considered a metal oxide with few impurities or defects (such as oxygen vacancies). Consequently, metal oxides containing CAAC-OS exhibit stable physical properties. Therefore, metal oxides containing CAAC-OS possess high heat resistance and high reliability.

[0293] In nc-OS, the atomic arrangement in tiny regions (e.g., regions above 1 nm and below 10 nm, particularly above 1 nm and below 3 nm) exhibits periodicity. Furthermore, no regularity in crystal orientation is observed between different nanocrystals in nc-OS. Therefore, no alignment is observed in the overall film. Thus, sometimes nc-OS is indistinguishable from a-like OS or amorphous oxide semiconductors in certain analytical methods.

[0294] Furthermore, indium gallium zinc oxide (hereinafter, IGZO), a metal oxide comprising indium, gallium, and zinc, sometimes exhibits a stable structure when composed of the aforementioned nanocrystals. In particular, IGZO tends to be difficult to grow in the atmosphere, so it is sometimes structurally more stable when formed from small crystals (e.g., the aforementioned nanocrystals) compared to when it is formed from large crystals (here, crystals a few millimeters or a few centimeters).

[0295] a-like OS is a metal oxide with a structure intermediate between nc-OS and amorphous oxide semiconductors. a-like OS contains voids or low-density regions. In other words, a-like OS has lower crystallinity than nc-OS and CAAC-OS.

[0296] Oxide semiconductors (metal oxides) have various structures and properties. In one embodiment of the present invention, the oxide semiconductor may also include two or more of amorphous oxide semiconductors, polycrystalline oxide semiconductors, a-like OS, nc-OS, and CAAC-OS.

[0297] The metal oxide film used as the semiconductor layer can be formed using any one or both of an inert gas and oxygen gas. Note that there are no particular limitations on the oxygen flow rate (oxygen partial pressure) during the formation of the metal oxide film. However, in the case of obtaining a transistor with high field efficiency mobility, the oxygen flow rate (oxygen partial pressure) during the formation of the metal oxide film is preferably 0% or more and 30% or less, more preferably 5% or more and 30% or less, and even more preferably 7% or more and 15% or less.

[0298] The bandgap of the metal oxide is preferably 2 eV or higher, more preferably 2.5 eV or higher, and even more preferably 3 eV or higher. In this way, by using a metal oxide with a wide bandgap, the off-state current of the transistor can be reduced.

[0299] The substrate temperature for forming the metal oxide film is preferably below 350°C, more preferably above room temperature and below 200°C, and even more preferably above room temperature and below 130°C. The substrate temperature for forming the metal oxide film is preferably room temperature, which can improve productivity.

[0300] Metal oxide films can be formed by sputtering. Other methods include PLD, PECVD, thermal CVD, ALD, and vacuum evaporation.

[0301] As described above, the display device of this embodiment includes a light-receiving element and a light-emitting element in the display section, and the display section has both the function of displaying images and the function of detecting light. Therefore, compared to the case where the sensor is located outside the display section or outside the display device, the electronic device can be miniaturized and made lighter. Furthermore, it can be combined with sensors located outside the display section or outside the display device to realize electronic devices with more functions.

[0302] At least one of the layers disposed between a pair of electrodes can be the same as the light-emitting element (EL element). For example, all layers of the light-receiving element except the active layer can also be the same as the light-emitting element (EL element). That is, by adding a process to form the active layer to the process of the light-emitting element, both the light-emitting element and the light-receiving element can be formed on the same substrate. Furthermore, the light-receiving element and the light-emitting element can use the same material and the same process to form the pixel electrode and the common electrode. In addition, by using the same material and the same process to manufacture the circuits electrically connected to the light-receiving element and the circuits electrically connected to the light-emitting element, the manufacturing process of the display device can be simplified. Thus, a highly convenient display device with a built-in light-receiving element can be manufactured without complex processes.

[0303] In the display device of this embodiment, the structure is disposed on the surface where the light-shielding layer forms, with a longer distance between the light-shielding layer and the light-receiving element and a shorter distance between the light-shielding layer and the light-emitting element. Therefore, sensor noise can be reduced, image resolution can be improved, and viewing angle dependence can be suppressed. Thus, both the display quality and image quality of the display device can be improved.

[0304] This embodiment can be appropriately combined with other embodiments. Furthermore, in this specification, where multiple structural examples are shown in one embodiment, these structural examples can be appropriately combined.

[0305] Implementation Method 2 In this embodiment, a display device according to an embodiment of the present invention will be described with reference to Figures 17 and 18.

[0306] [Example 1 of a pixel circuit] One embodiment of the display device of the present invention includes a first pixel circuit having a light-receiving element and a second pixel circuit having a light-emitting element. The first pixel circuit and the second pixel circuit are each configured in a matrix.

[0307] Figure 17A shows an example of a first pixel circuit with a light-receiving element, while Figure 17B shows an example of a second pixel circuit with a light-emitting element.

[0308] The pixel circuit PIX1 shown in Figure 17A includes a light-receiving element PD, transistors M1, M2, M3, and M4, and a capacitor C1. Here, an example is shown using a photodiode as the light-receiving element PD.

[0309] The cathode of the light-receiving element PD is electrically connected to wiring V1, and the anode is electrically connected to one of the source and drain electrodes of transistor M1. The gate of transistor M1 is electrically connected to wiring TX, and the other of its source and drain electrodes is electrically connected to one electrode of capacitor C1, one of the source and drain electrodes of transistor M2, and the gate of transistor M3. The gate of transistor M2 is electrically connected to wiring RES, and the other of its source and drain electrodes is electrically connected to wiring V2. One of the source and drain electrodes of transistor M3 is electrically connected to wiring V3, and the other of its source and drain electrodes is electrically connected to one of the source and drain electrodes of transistor M4. The gate of transistor M4 is electrically connected to wiring SE, and the other of its source and drain electrodes is electrically connected to wiring OUT1.

[0310] Wiring V1, wiring V2, and wiring V3 are each supplied with a constant potential. When the photodetector PD is driven with a reverse bias, a potential lower than that of wiring V1 is supplied to wiring V2. Transistor M2 is controlled by a signal supplied to wiring RES, causing the potential of the node connected to the gate of transistor M3 to be reset to the potential supplied to wiring V2. Transistor M1 is controlled by a signal supplied to wiring TX, controlling the timing of the potential changes of the aforementioned nodes according to the current flowing through the photodetector PD. Transistor M3 serves as an amplifying transistor outputting the potential based on the aforementioned nodes. Transistor M4 is controlled by a signal supplied to wiring SE, serving as a selection transistor used to read the output based on the potential of the aforementioned nodes using an external circuit connected to wiring OUT1.

[0311] The pixel circuit PIX2 shown in Figure 17B includes a light-emitting element EL, transistors M5, M6, and M7, and a capacitor C2. Here, an example of using a light-emitting diode as the light-emitting element EL is shown. In particular, an organic EL element is preferred as the light-emitting element EL.

[0312] The gate of transistor M5 is electrically connected to wiring VG, one of its source and drain is electrically connected to wiring VS, and the other of its source and drain is electrically connected to one electrode of capacitor C2 and the gate of transistor M6. One of the source and drain of transistor M6 is electrically connected to wiring V4, and the other of its source and drain is electrically connected to the anode of light-emitting element EL and one of the source and drain of transistor M7. The gate of transistor M7 is electrically connected to wiring MS, and the other of its source and drain is electrically connected to wiring OUT2. The cathode of light-emitting element EL is electrically connected to wiring V5.

[0313] Wiring V4 and wiring V5 are each supplied with a constant potential. The anode and cathode sides of the light-emitting element EL can be set to a high potential and a lower potential than the anode side, respectively. Transistor M5 is controlled by a signal supplied to wiring VG and serves as a selection transistor to control the selection state of the pixel circuit PIX2. Furthermore, transistor M6 serves as a drive transistor to control the current flowing through the light-emitting element EL based on the potential supplied to its gate. When transistor M5 is in the on state, the potential supplied to wiring VS is supplied to the gate of transistor M6, and the brightness of the light-emitting element EL can be controlled based on this potential. Transistor M7 is controlled by a signal supplied to wiring MS and outputs the potential between transistor M6 and the light-emitting element EL to the outside via wiring OUT2.

[0314] Here, the transistors M1, M2, M3 and M4 included in the pixel circuit PIX1, and the transistors M5, M6 and M7 included in the pixel circuit PIX2 are preferably transistors whose semiconductor layer forming their channels contains metal oxide (oxide semiconductor).

[0315] Using metal oxide transistors with wider band gaps and lower carrier densities than silicon allows for extremely low off-state currents. Due to their low off-state current, the charge stored in the capacitor connected in series with the transistor can be maintained for extended periods. Therefore, transistors M1, M2, and M5 connected in series with capacitor C1 or C2 are preferably oxide semiconductor transistors. Furthermore, other transistors also typically use oxide semiconductor transistors, thereby reducing manufacturing costs.

[0316] Furthermore, transistors M1 to M7 can also be silicon-containing semiconductors forming their channels. In particular, by using highly crystalline silicon such as monocrystalline or polycrystalline silicon, high field efficiency can be achieved, enabling higher-speed operation.

[0317] Furthermore, one or more of transistors M1 to M7 may be transistors containing oxide semiconductors, while the other transistors may be transistors containing silicon.

[0318] Figures 17A and 17B show an n-channel transistor, but a p-channel transistor can also be used.

[0319] The transistors included in pixel circuit PIX1 and pixel circuit PIX2 are preferably arranged on the same substrate. More preferably, the transistors included in pixel circuit PIX1 and pixel circuit PIX2 are mixed and formed in one region and arranged periodically.

[0320] Furthermore, it is preferable to provide one or more layers, including one or both of transistors and capacitors, at a location overlapping with the light-receiving element PD or the light-emitting element EL. This reduces the effective area occupied by each pixel circuit, thereby enabling a high-resolution light-receiving or display section.

[0321] [Example 2 of pixel circuits] Figure 18A shows a block diagram of a pixel. The pixel shown in Figure 18A includes a switching transistor, a driving transistor, an OLED light-emitting element, and memory.

[0322] The memory is supplied with data Data_W. When the pixel is supplied with data Data_W in addition to display data Data, the current flowing through the light-emitting element increases, thus enabling the display device to exhibit high brightness.

[0323] In a display device according to one embodiment of the present invention, light emitted by a light-emitting element is used as a light source, and a light-receiving element detects the light reflected from the object being photographed, thereby performing an image capture. By driving the light-emitting element used for the light source according to display data Data and data Data_W, the light-emitting element can emit light at a high brightness. When the brightness of the light-emitting element is high, the signal-to-noise ratio (S / N ratio) can be improved. Therefore, the light detection sensitivity of the light-receiving element can be improved.

[0324] Figure 18B shows a circuit diagram of the pixel circuit.

[0325] The pixel shown in Figure 18B includes transistors M1, M2, M3, and M4, capacitors Cs and Cw, and light-emitting element EL.

[0326] One of the source and drain electrodes of transistor M1 is electrically connected to one electrode of capacitor Cw. The other electrode of capacitor Cw is electrically connected to one of the source and drain electrodes of transistor M4. One of the source and drain electrodes of transistor M4 is electrically connected to the gate electrode of transistor M2. The gate electrode of transistor M2 is electrically connected to one electrode of capacitor Cs. The other electrode of capacitor Cs is electrically connected to one of the source and drain electrodes of transistor M2. One of the source and drain electrodes of transistor M2 is electrically connected to one of the source and drain electrodes of transistor M3. One of the source and drain electrodes of transistor M3 is electrically connected to one electrode of light-emitting element EL. Each transistor shown in Figure 18B includes a back gate electrically connected to the gate electrode; however, the connection of the back gate electrode is not limited to this. Alternatively, a back gate electrode may not be provided in the transistor.

[0327] Here, the node connecting the other electrode of capacitor Cw, one of the source and drain electrodes of transistor M4, the gate electrode of transistor M2, and one electrode of capacitor Cs is called node NM. Additionally, the node connecting the other electrode of capacitor Cs, one of the source and drain electrodes of transistor M2, one of the source and drain electrodes of transistor M3, and one electrode of light-emitting element EL is called node NA.

[0328] The gate of transistor M1 is electrically connected to wiring G1. The gate of transistor M3 is electrically connected to wiring G1. The gate of transistor M4 is electrically connected to wiring G2. The other of the source and drain of transistor M1 is electrically connected to wiring DATA. The other of the source and drain of transistor M3 is electrically connected to wiring V0. The other of the source and drain of transistor M4 is electrically connected to wiring DATA_W.

[0329] One of the source and drain electrodes of transistor M2 is electrically connected to wiring ANODE (high potential side). The other electrode of the light-emitting element EL is electrically connected to wiring CATHODE (low potential side).

[0330] Wiring G1 and Wiring G2 can be used as signal lines to control the operation of the transistor. Wiring DATA can be used as a signal line to supply image signals to the pixels. Wiring DATA_W can be used as a signal line to write data to the memory circuit MEM. Wiring DATA_W can be used as a signal line to supply correction signals to the pixels. Wiring V0 is used as a monitoring line to obtain the electrical characteristics of transistor M4. In addition, by supplying a specific potential from wiring V0 through transistor M3 to the other electrode of capacitor Cs, the writing of image signals can be stabilized.

[0331] Transistors M2 and M4, along with capacitor Cw, constitute the memory circuit MEM. Node NM is the storage node; by turning on transistor M4, the signal supplied to the wiring DATA_W can be written to node NM. By using a transistor with extremely low off-state current as transistor M4, the potential of node NM can be maintained for a long time.

[0332] As the transistor M4, for example, a transistor using metal oxide in the channel forming region (hereinafter referred to as an OS transistor) can be used. This allows for extremely low off-state current of the transistor M4, enabling the potential of node NM to be maintained for a long time. In this case, an OS transistor is preferably used as another transistor constituting the pixel. For specific examples of metal oxide transistors, please refer to Embodiment 1.

[0333] OS transistors have a large bandgap and exhibit extremely low off-state current. Unlike transistors that include Si in the channel formation region (hereinafter referred to as Si transistors), OS transistors do not experience impact ionization, sudden collapse, or short-channel effects, thus enabling the formation of highly reliable circuits.

[0334] Alternatively, a Si transistor can be used as the transistor M4. In this case, it is preferable to use a Si transistor as the other transistor constituting the pixel.

[0335] Examples of Si transistors include transistors containing amorphous silicon, transistors containing crystalline silicon (typically low-temperature polycrystalline silicon), and transistors containing monocrystalline silicon.

[0336] A single pixel can also include both OS transistors and Si transistors.

[0337] Within a pixel, the signal written to node NM is capacitively coupled to the image signal supplied from the wiring DATA and output to node NA. Transistor M1 can have the function of selecting pixels.

[0338] In other words, the desired correction signal can be added to the supplied image signal simply by storing it in node NM. Note that the correction signal may sometimes attenuate due to factors along the transmission path, so it is preferable to take this attenuation into account when generating the correction signal.

[0339] By using image signals and correction signals to make the light-emitting element emit light, the current flowing through the light-emitting element can be increased, thus achieving high brightness. A voltage higher than the output voltage of the source driver can be applied as the gate voltage to drive the transistor, thereby reducing the power consumption of the source driver. Since high-brightness light can be used as the light source, the sensitivity of the sensor can be improved.

[0340] This implementation method can be appropriately combined with other implementation methods.

[0341] Implementation Method 3 In this embodiment, an electronic device according to one embodiment of the present invention will be described with reference to FIGS. 19 to 21.

[0342] The electronic device of this embodiment includes a display device according to one embodiment of the present invention. For example, the display device according to one embodiment of the present invention can be used in the display section of an electronic device. Because the display device according to one embodiment of the present invention has a light detection function, biometric identification or touch operation (contact or proximity) can be performed on the display section. This improves the functionality and convenience of the electronic device.

[0343] As electronic devices, in addition to electronic devices with large screens such as televisions, desktop or laptop personal computers, monitors for computers, digital signage, and large game consoles such as pinball machines, other examples include digital cameras, digital camcorders, digital photo frames, mobile phones, portable game consoles, portable information terminals, and audio playback devices.

[0344] The electronic device in this embodiment may also include a sensor (which has the function of measuring factors such as force, displacement, position, velocity, acceleration, angular velocity, rotational speed, distance, light, liquid, magnetism, temperature, chemical substance, sound, time, hardness, electric field, current, voltage, power, radiation, flow rate, humidity, tilt, vibration, odor, or infrared radiation).

[0345] The electronic device of this embodiment can have various functions. For example, it can have the following functions: displaying various information (still images, moving images, text images, etc.) on the display unit; touch panel function; displaying calendar, date or time, etc.; executing various software (programs); performing wireless communication function; reading programs or data stored in the storage medium; etc.

[0346] The electronic device 6500 shown in Figure 19A is a portable information terminal device that can be used as a smartphone.

[0347] The electronic device 6500 includes a housing 6501, a display unit 6502, a power button 6503, a button 6504, a speaker 6505, a microphone 6506, a camera 6507, and a light source 6508. The display unit 6502 has a touch panel function.

[0348] The display unit 6502 may use a display device according to one embodiment of the present invention.

[0349] Figure 19B is a cross-sectional view of one end of the microphone 6506, including the housing 6501.

[0350] A light-transmitting protective member 6510 is provided on one side of the display surface of the housing 6501. The space surrounded by the housing 6501 and the protective member 6510 contains a display panel 6511, an optical member 6512, a touch sensor panel 6513, a printed circuit board 6517, a battery 6518, etc.

[0351] The display panel 6511, optical component 6512 and touch sensor panel 6513 are fixed to the protective component 6510 using an adhesive layer (not shown).

[0352] In the area outside the display unit 6502, a portion of the display panel 6511 is folded back, and this folded portion is connected to an FPC 6515. An IC 6516 is mounted on the FPC 6515. The FPC 6515 is connected to terminals disposed on a printed circuit board 6517.

[0353] The display panel 6511 can use a flexible display according to one embodiment of the present invention. This allows for the realization of an extremely lightweight electronic device. Furthermore, since the display panel 6511 is extremely thin, a large-capacity battery 6518 can be installed while minimizing the thickness of the electronic device. Additionally, by folding a portion of the display panel 6511 to provide a connection portion with the FPC 6515 on the back of the pixel portion, a narrow-bezel electronic device can be realized.

[0354] Figure 20A shows an example of a television set. In the television set 7100, a display unit 7000 is assembled in a housing 7101. The structure in which the housing 7101 is supported by a bracket 7103 is shown here.

[0355] A display device according to an embodiment of the present invention can be applied to the display unit 7000.

[0356] The television 7100 shown in FIG. 20A can be operated using the operation switch provided in the housing 7101 or the separately provided remote control 7111. Alternatively, a touch sensor can be provided in the display unit 7000, allowing operation of the television 7100 by touching the display unit 7000 with a finger or similar object. Furthermore, the remote control 7111 can also have a display unit that displays data output from the remote control 7111. Using the operation keys or touch panel provided in the remote control 7111, channel and volume can be adjusted, and the images displayed on the display unit 7000 can be manipulated.

[0357] In addition, the 7100 television set includes a receiver and a modem. The receiver can be used to receive general television broadcasts. Furthermore, the modem connects to a wired or wireless communication network, enabling one-way (from sender to receiver) or two-way (between sender and receiver, or between receivers, etc.) information communication.

[0358] Figure 20B shows an example of a notebook computer. The notebook computer 7200 includes a casing 7211, a keyboard 7212, a pointing device 7213, an external connection port 7214, etc. A display unit 7000 is assembled in the casing 7211.

[0359] A display device according to an embodiment of the present invention can be applied to the display unit 7000.

[0360] Figures 20C and 20D show an example of a digital signage.

[0361] The digital signage 7300 shown in Figure 20C includes a housing 7301, a display unit 7000, and a speaker 7303. It may also include LEDs, operation keys (including a power switch or operation switch), connection terminals, various sensors, a microphone, etc.

[0362] Figure 20D shows a digital signage 7400 mounted on a cylindrical column 7401. The digital signage 7400 includes a display section 7000 disposed along the curved surface of the column 7401.

[0363] In Figures 20C and 20D, a display device according to an embodiment of the present invention can be applied to the display unit 7000.

[0364] The larger the display unit (7000), the more information it can provide at once. A larger display unit (7000) is also more likely to attract attention, which can improve the effectiveness of advertising.

[0365] By using a touch panel for the display unit 7000, not only can static or dynamic images be displayed on the display unit 7000, but users can also operate it intuitively, which is superior. In addition, when used to provide information such as route information or traffic information, the intuitive operation can improve ease of use.

[0366] As shown in Figures 20C and 20D, the digital signage 7300 or 7400 is preferably able to wirelessly communicate with a user's smartphone or other information terminal device 7311 or 7411. For example, advertising information displayed on the display unit 7000 can be displayed on the screen of the information terminal device 7311 or 7411. Furthermore, the display on the display unit 7000 can be switched by operating the information terminal device 7311 or 7411.

[0367] Furthermore, the game can be executed on the digital signage 7300 or 7400 using the screen of information terminal device 7311 or 7411 as the operating unit (controller). Thus, multiple users can participate in the game simultaneously and enjoy the experience.

[0368] The electronic devices shown in Figures 21A to 21F include a housing 9000, a display unit 9001, a speaker 9003, operation keys 9005 (including a power switch or operation switch), a connection terminal 9006, a sensor 9007 (which has the function of measuring the following factors: force, displacement, position, velocity, acceleration, angular velocity, rotational speed, distance, light, liquid, magnetism, temperature, chemical substance, sound, time, hardness, electric field, current, voltage, power, radiation, flow rate, humidity, tilt, vibration, odor, or infrared radiation), and a microphone 9008, etc.

[0369] The electronic devices shown in Figures 21A to 21F have various functions. For example, they may have the following functions: displaying various information (still images, moving images, and text images, etc.) on a display unit; a touch panel function; displaying a calendar, date, or time; controlling processing using various software programs; performing wireless communication; reading and processing programs or data stored in a storage medium; etc. Note that the functions of an electronic device are not limited to the above-mentioned functions, but can have a variety of functions. An electronic device may include multiple display units. Furthermore, a camera or similar device may be installed in the electronic device to enable it to have the following functions: capturing still or moving images and storing the captured images in a storage medium (external storage medium or storage medium built into the camera); displaying the captured images on a display unit; etc.

[0370] The electronic devices shown in Figures 21A to 21F will now be described in detail.

[0371] Figure 21A is a perspective view showing a portable information terminal 9101. The portable information terminal 9101 can be used, for example, as a smartphone. Note that a speaker 9003, a connection terminal 9006, a sensor 9007, etc., can also be provided in the portable information terminal 9101. Furthermore, as a portable information terminal 9101, text or image information can be displayed on multiple surfaces. Examples of three illustrations 9050 are shown in Figure 21A. Additionally, information 9051, shown as a dashed rectangle, can be displayed on other surfaces of the display unit 9001. Examples of information 9051 include notifications of received emails, SNS messages, or phone calls; the subject of emails or SNS messages; the sender's name; the date; the time; remaining battery level; and the display of radio wave intensity. Alternatively, illustrations 9050 can be displayed in the same locations where information 9051 is displayed.

[0372] Figure 21B is a perspective view showing a portable information terminal 9102. The portable information terminal 9102 has the function of displaying information on three or more surfaces of the display unit 9001. Here, examples are shown where information 9052, information 9053, and information 9054 are displayed on different surfaces. For example, when the portable information terminal 9102 is placed in a jacket pocket, the user can check information 9053 displayed in a position seen from above the portable information terminal 9102. The user can check this display without taking the portable information terminal 9102 out of the pocket, thereby determining whether to answer a phone call.

[0373] Figure 21C is a perspective view showing a watch-type portable information terminal 9200. The portable information terminal 9200 can be used, for example, as a smartwatch. Furthermore, the display surface of the display unit 9001 is curved, allowing display along its curved surface. Additionally, the portable information terminal 9200 can perform hands-free calls, for example, by communicating with a headset capable of wireless communication. Furthermore, by utilizing the connection terminal 9006, the portable information terminal 9200 can transmit data or charge with other information terminals. Charging can also be performed wirelessly.

[0374] Figures 21D to 21F are perspective views showing the foldable portable information terminal 9201. Furthermore, Figure 21D is a perspective view of the portable information terminal 9201 in its unfolded state, Figure 21F is a perspective view of its folded state, and Figure 21E is a perspective view of the intermediate state during the transition from one of the states in Figures 21D and 21F to the other. The portable information terminal 9201 offers good portability in its folded state, and in its unfolded state, it provides a large, seamless display area, resulting in excellent browsing capabilities. The display unit 9001 included in the portable information terminal 9201 is supported by three housings 9000 connected by hinges 9055. The display unit 9001 can be bent, for example, within a radius of curvature of 0.1 mm or more and 150 mm or less.

[0375] This implementation method can be appropriately combined with other implementation methods and examples. Example 1

[0376] In this embodiment, the results of manufacturing and observing an evaluation device including a light-shielding layer 219a will be described. In this embodiment, evaluation devices including a light-shielding layer 219a, as described in Embodiment 1, are manufactured for display devices 10K (FIG. 6B), 10N (FIG. 9A, 9B), 10P (FIG. 10B), and 10Q (FIG. 11A). Furthermore, a display device employing the structure of display device 10P is manufactured and its display is verified.

[0377] First, the results of manufacturing the evaluation device 30N, which includes the light-shielding layer 219a, of the display device 10N will be explained. The evaluation device 30N is manufactured by forming a transistor to the light-shielding layer 219a and a spacer 219b on the substrate 151 (Figs. 7A and 9B).

[0378] Figure 22 shows a top photograph of the pixel section of the evaluation device 30N. As shown in Figure 22, the structure of Figure 9A is used for the pixel section of the evaluation device 30N.

[0379] Pixel 31 includes a light-receiving element 110, a red light-emitting element 190R, a green light-emitting element 190G, and a blue light-emitting element 190B.

[0380] As shown in FIG22, the light-shielding layer 219a has a top surface shape that surrounds the four sides of the light-receiving element 110 and has one end separated from the other. The gap 220 of the light-shielding layer 219a is located on the side of the red light-emitting element 190R. Furthermore, as shown in region 230, one end of the light-shielding layer 219a protrudes beyond the side of the red light-emitting element 190R beyond the green light-emitting element 190G. In this embodiment, it is assumed that the green light-emitting element 190G is used as the sensing light source in the manufacturing of the evaluation device 30N. Therefore, the green light-emitting element 190G and the gap 220 are configured to be separated from each other. As a result, stray light from the green light-emitting element 190G can be suppressed from incident on the light-receiving element 110 and prevent it from being affected by noise during sensing.

[0381] In addition, a spacer 219b is provided between the green light-emitting element 190G and the blue light-emitting element 190B.

[0382] Figure 23A shows a cross-sectional photograph of the evaluation device 30N, including the light-shielding layer 219a.

[0383] The light-shielding layer 219a is made using a red filter material. The thickness La of the light-shielding layer 219a is approximately 2.2 μm.

[0384] As shown in Figure 23A, the cross-sectional shape of the light-shielding layer 219a is an inverted cone shape. When the inverted cone-shaped light-shielding layer 219a completely surrounds the four sides of the light-receiving element 110, the common electrode 115 is disconnected by the light-shielding layer 219a, and the common electrode 115 may be separated into the inner and outer sides of the light-shielding layer 219a. As shown in Figure 22, the separation of the common electrode 115 can be suppressed by the gap 220 in the light-shielding layer 219a.

[0385] Next, the results of manufacturing the evaluation device 30P, including the light-shielding layer 219a, of the display device 10P will be explained.

[0386] Figure 23B shows a cross-sectional photograph of the evaluation device 30P, including the light-shielding layer 219a. Additionally, Figure 24 shows the display results of the display device employing the structure of the display device 10P.

[0387] The light-shielding layer 219a is made using a red filter material. The thickness Lb of the light-shielding layer 219a is approximately 2.1 μm.

[0388] When the light-shielding layer 219a is an inverted cone shape, the coverage of the organic film and the common electrode 115 formed on the light-shielding layer 219a sometimes decreases, and the light-emitting element becomes non-light-emitting.

[0389] As shown in Figure 23B, by providing a sidewall 219c that contacts the side of the inverted conical light-shielding layer 219a, the coverage of the organic film and the common electrode 115 can be improved, thereby improving the display quality of the display device.

[0390] As shown in Figure 24, by adopting the structure of display device 10P, a good display result with fewer point defects was obtained.

[0391] Next, the results of the evaluation device 30K, which includes the light-shielding layer 219a, in the manufacture of the display device 10K will be explained.

[0392] Figure 25A shows a cross-sectional photograph of the evaluation device 30K, including the light-shielding layer 219a.

[0393] In the evaluation device 30K, a conical light-shielding layer 219a is formed by embedding an opening provided in the partition wall 216. As the partition wall 216, a resin layer that allows visible light to pass through is formed using polyimide resin. As the light-shielding layer 219a, a resin layer that blocks visible light is formed using a brown photoresist material.

[0394] Next, the results of manufacturing the evaluation device 30Q, including the light-shielding layer 219a, of the display device 10Q will be explained.

[0395] Figure 25B shows a cross-sectional photograph of the evaluation device 30Q, including the light-shielding layer 219a.

[0396] In the evaluation device 30Q, a conical light-shielding layer 219a is provided on the partition wall 217. As the partition wall 217 and the light-shielding layer 219a, each is formed into a resin layer that blocks visible light using a brown photoresist material.

[0397] Using the above process, an evaluation device including a light-shielding layer 219a was manufactured in this embodiment. Example 2

[0398] In this embodiment, the results of manufacturing a display device in which a light-receiving element and a light-emitting element are included in the display section are described.

[0399] [Device Structure] Figure 26 shows the device structure of the pixels that make up the display device.

[0400] In this embodiment, a pixel of the display device comprises four elements: an organic EL element (OLED) of three colors (red, green, and blue) and an organic photodiode (OPD), and circuits (driving circuit 43 and driving circuit 44) for independently driving these four elements.

[0401] Four components are each disposed on substrate 151. In this embodiment, a display device using a glass substrate as substrate 151 and a flexible display device using a resin substrate as substrate 151 are manufactured. Furthermore, a driving circuit 43 electrically connected to the pixel electrode 181 of an organic photodiode (OPD) and a driving circuit 44 electrically connected to the pixel electrode 191 of an organic EL element (OLED) are also disposed on substrate 151. The organic photodiode (OPD) has a structure that detects light incident from the side opposite to the substrate (the side of the common electrode 115 in FIG. 22). The organic EL element (OLED) has a top-emitting structure that emits light to the side opposite to the substrate. Pixel electrodes 181 and 191 have the function of reflecting visible light.

[0402] Each of the four components has a hole transport layer, and also has a light-emitting layer for each color of the organic EL element OLED and an active layer for each color of the organic photodiode OPD. Specifically, the organic photodiode OPD includes a hole transport layer 186 and an active layer 183, the red organic EL element OLED includes a hole transport layer 196R and a light-emitting layer 193R, the green organic EL element OLED includes a hole transport layer 196G and a light-emitting layer 193G, and the blue organic EL element OLED includes a hole transport layer 196B and a light-emitting layer 193B.

[0403] Of the four elements, the common layer 112, common layer 114a, common layer 114b, and common electrode 115 have identical structures and are formed using the same mask. Common layer 112 serves as the hole injection layer for the organic EL element (OLED) and the hole transport layer for the organic photodiode (OPD). Common layer 114a serves as the electron transport layer for both the organic EL element (OLED) and the organic photodiode (OPD). Common layer 114b serves as the electron injection layer for both the organic EL element (OLED) and the organic photodiode (OPD). The common electrode 115 has the function of allowing visible light to pass through and reflecting visible light.

[0404] In this way, by changing the structure of manufacturing light-emitting elements of the three colors RGB separately to a structure of manufacturing four elements, including an organic photodiode (OPD), a photosensor can be formed on the entire surface of the display section of an organic EL display. Compared with the case where the photosensor is installed as a separate module, the structure of the display device in this embodiment is superior in terms of process, cost, and design, and it is easy to achieve miniaturization and flexibility.

[0405] The imaging method of the display device in this embodiment will be described with reference to FIG1C. The display device in this embodiment uses light emitted by an organic EL element OLED as a light source and uses an organic photodiode OPD to detect reflected light from the object to be photographed in order to perform imaging.

[0406] As shown in Figure 1C, when capturing a fingerprint of a finger 52 in contact with the substrate 59 (relative to the substrate), the finger 52 on the substrate 59 reflects light emitted by the organic EL element OLED, and this reflected light is detected by the organic photodiode OPD. At this time, the fingerprint can be captured by utilizing the difference in reflectivity of the fingerprint's surface.

[0407] Fingerprint imaging only requires detecting a single color of light, eliminating the need for color imaging. However, the display device in this embodiment enables color imaging by sequentially emitting RGB organic EL elements and detecting the reflected light of each color in a time-division manner. For example, it can scan a color image disposed on a contrasting substrate in color. Using this method, only an organic photodiode (OPD) capable of detecting the entire visible light region is needed; separate OPDs for R, G, and B are not required, thus facilitating high-definition imaging.

[0408] [Structure of the display device] In this embodiment, an active matrix display device with a screen size of 3.07 inches diagonally, a pixel count of 360(H) × 540(V), a pixel pitch of 120μm × 120μm, and a resolution of 212ppi was manufactured. The gate driver is built-in, while the source driver is an external IC via a COG configuration. The readout circuit outputs analog voltages sequentially.

[0409] In the display device of this embodiment, a transistor whose semiconductor layer comprises a crystalline oxide semiconductor is used as a switching element. The off-state current of the transistor whose semiconductor layer comprises a crystalline oxide semiconductor is very low. This feature provides the advantage of enabling global shutter-type imaging in sensing. Furthermore, the number of times still images are rewritten can be reduced, thereby enabling low-power drive (IDS) driving.

[0410] IDS (Idle Stop) drive operates at a lower frequency than usual. After writing image data, the IDS drive stops rewriting the image data. By extending the interval between image data writes and the next write, the power consumption required for writing image data during that period can be saved. The frame frequency in IDS drive mode can be, for example, about 1 / 100 to 1 / 10 of the normal operating mode (typically above 60Hz and below 240Hz). Still images have the same video signal between consecutive frames. Therefore, IDS drive mode is particularly effective when displaying still images.

[0411] Typically, image rewriting generates noise for the sensor, thereby reducing the signal-to-noise ratio (S / N ratio). However, with IDS (Inductively Coupled Detector) driving, image rewriting can be stopped while the image is being sensed. This allows sensing to proceed without being negatively affected by noise from image rewriting, thus suppressing the decrease in the S / N ratio.

[0412] In the display device of this embodiment, a frame is divided into a display period and a sensing period. During the sensing period, noise during sensing is reduced without rewriting the image by using IDS driving. Furthermore, in fingerprint recognition or image scanning, the light emitted by the organic EL element OLED is used as the light source, thus requiring the luminance of the organic EL element OLED to be kept at a fixed value. In this case, noise can also be reduced by using IDS driving, enabling excellent sensing.

[0413] Here, when the brightness of the organic EL element OLED is high, the signal-to-noise ratio (S / N ratio) can be improved. In the display device of this embodiment, the pixel circuit including memory shown in FIG18B is used. Therefore, the display device of this embodiment can make the organic EL element OLED emit light at a high brightness. By selectively increasing the brightness of the pixels during sensing, the sensitivity of the sensor can be improved. Specifically, when the display device of this embodiment performs a green monochrome display, it can emit light at a maximum brightness of 2000 cd / cm².

[0414] As the cross-sectional structure of the display device manufactured in this embodiment, the structure of display device 10K (Fig. 6B, Fig. 7A) is adopted.

[0415] [Results Displayed] Figures 27A and 27B show the display results of the display device of this embodiment. Figure 27A shows the display results of the display device using a glass substrate as substrate 151. Figure 27B shows the display results of a flexible display device using a resin substrate as substrate 151. As can be confirmed from Figures 27A and 27B, the display device including a light-receiving element and a light-emitting element in the display section can display images well. Furthermore, as can be confirmed from Figure 27B, the flexibility of the display section including the light-receiving element and the light-emitting element can be improved, and images can be displayed well even when the display section is bent.

[0416] [Camera Optical System] In the display device of this embodiment, the organic photodiode (OPD) detects light emitted by the organic OLED element reflected by an object. However, sometimes the light emitted by the OLED element is reflected within the display device and incident on the OPD without passing through the object. This stray light becomes noise during image capture, leading to a decrease in the signal-to-noise ratio (S / N). In the display device of this embodiment, light-shielding layers are disposed on both the side opposite the substrate and the side supporting the substrate to suppress the influence of stray light.

[0417] First, it was confirmed whether the influence of stray light was suppressed when both the light-shielding layer on the opposite substrate side and the supporting substrate side were included. Here, as a structure without a light-shielding layer, a structure was used that removed the light-shielding layer 158 from the structure of the display device 10D shown in FIG. 4A (hereinafter referred to as display device 10D for simplicity), and as a structure including a light-shielding layer, the structure of the display device 10P shown in FIG. 10B, including the light-shielding layer 158 and the light-shielding layer 219a, was used. The light-shielding layer 219a was formed with a thickness of 2.0 μm.

[0418] Without placing an object for photography on display device 10D or display device 10P, only one green pixel is illuminated as a light source, and the detection intensity of the organic photodiode (OPD) around the illuminated pixel is measured. Since no object is present for photography, the light detected by the OPD consists only of stray light and other noise components. The detection intensity of the OPD is measured in advance under a completely non-illuminating state. Furthermore, considering the influence of stray light from the organic OLED element as a light source, the difference between the detection intensity under completely non-illuminating conditions and the light detection intensity under the state where only one pixel is illuminated is calculated. In addition, the measurement results of display device 10P are normalized to the peak intensity of the measurement results of display device 10D.

[0419] Figure 28 shows the measurement results of display device 10D, and Figure 29 shows the measurement results of display device 10P. In Figures 28 and 29, the z-axis represents the light detection intensity, and the x-axis and y-axis represent the pixel address. As can be seen from Figures 28 and 29, by providing the light-shielding layer 219a, the maximum detection intensity is reduced to approximately half. In Figure 28, the detection intensity is high within an area of ​​approximately 4×4 pixels, and in Figure 29, the detection intensity is high within an area of ​​approximately 2×2 pixels. By providing the light-shielding layer 219a, the range of pixels with high detection intensity can be reduced. Therefore, by providing a light-shielding layer on the support substrate side, the intensity of noise caused by stray light can be suppressed, and the range of noise caused by detected stray light can be reduced. Therefore, by providing light-shielding layers on both the opposite substrate side and the support substrate side, the influence of stray light can be suppressed, thereby improving the signal-to-noise ratio.

[0420] To capture objects clearly, it is necessary to reduce the overlapping area of ​​the imaging range of two adjacent organic photodiodes (OPDs). Refer to Figure 30 to illustrate the relationship between the imaging range of an organic photodiode and various parameters.

[0421] Figure 30 shows the imaging range S of an organic photodiode (OPD), the thickness L relative to the substrate (substrate 152), the opening diameter p of the light-shielding layer 158, the distance l between the bottom of the opening of the light-shielding layer 158 (the side of the OPD on the substrate 152) and the OPD, and the width s of the OPD. As can be seen from Figure 30, the opening diameter p and the length L affect the imaging range S of the OPD.

[0422] The imaging range S can be calculated using the following formula (1). In formula (1), n1 is the refractive index of the adhesive layer 142, and n2 is the refractive index of the substrate 152. In a flexible display device, a resin substrate is used as the substrate 152, so the refractive index of the sealing resin used for the adhesive layer 142 and the refractive index of the resin substrate used for the substrate 152 are considered to be approximately equal. Therefore, when n1 = n2, the following formula (2) is obtained.

[0423] [Formula 1]

[0424] Figure 31 shows the result of calculating the imaging range S using the above formula (2). Figure 31 shows the relationship between the thickness L of the substrate 152 and the imaging range S of the organic photodiode OPD for the cases of l=10μm, s=20μm, n1=n2 and p=1μm, 2μm, 5μm, 10μm, 20μm.

[0425] As shown in Figure 31, the smaller the opening diameter p, the narrower the imaging range S of the organic photodiode (OPD). Furthermore, the thinner the substrate 152 thickness L, the narrower the imaging range S of the OPD. In other words, the imaging range S of the OPD can be controlled by adjusting the opening diameter p and the substrate 152 thickness L. According to formula (2), the imaging range S of the OPD narrows when the distance l is increased or the width s is decreased.

[0426] Figures 32 and 33 show the results of comparing the imaging resolution of display devices with different thicknesses L of substrate 152 and the presence or absence of a light shielding layer 158. Black lines with a width of 0.12 mm and a total reflectivity of 10% were printed at 0.72 mm intervals on a reflective plate with a total reflectivity of 80%. The printed object was placed on the display device and an image was captured. The display device was designed with p = 19 μm, l = 8 μm, and s = 21 μm.

[0427] Figures 32A and 32B are enlarged views of the captured images. Figure 32A shows that when the thickness L of the substrate 152 is thinner, clear images can be captured; however, the thicker the thickness L, the more blurred the black lines become. Figure 32B shows that black lines can be captured regardless of the presence or absence of the light-shielding layer 158, but the contrast between the black lines and the background area increases when the light-shielding layer 158 is present. Therefore, it can be seen that by setting the light-shielding layer 158, the imaging range of the organic photodiode (OPD) can be narrowed, thus suppressing the detection of the surrounding background area.

[0428] Figure 33 shows the result of extracting the horizontal contour from the imaging results. Figure 33 is the result obtained by pre-imaging a low-reflectivity black plate against a white background, normalizing the values ​​of the black plate and the white background. As shown in Figure 33, the thicker the substrate 152 (L), the higher the detection intensity of the black lines and the lower the detection intensity of the background area between the black lines. This is because: as the thickness L of the substrate 152 increases, the imaging range of the organic photodiode (OPD) widens, and any organic photodiode (OPD) can detect both the black lines and the background area, thus making it less likely for differences to occur.

[0429] Considering the above results, in this embodiment, both the display device using a glass substrate on the substrate 151 and the display device using a resin substrate on the substrate 151 employ a light-shielding layer 158, and are designed with p, l, and s as the above values ​​and L = 0.2 mm.

[0430] [Camera Results] The image shows the results captured by an organic photodiode (OPD) using light emitted from an organic OLED element as the light source in the display device of this embodiment. In this embodiment, fingerprint imaging and color image scanning are performed.

[0431] First, a fingerprint is captured by touching a display device using a glass substrate as substrate 151 with a finger, causing the green organic EL element (OLED) to emit light. This allows for accurate capture of the raised and recessed ridges of the fingerprint. Therefore, by using the display device of this embodiment, a high-resolution image equivalent to the fingerprint can be captured. Furthermore, as shown in FIG34A, the display portion of a flexible display device using a resin substrate as substrate 151 is bent, and a fingerprint is captured by touching the bent portion with a finger, causing the green organic EL element (OLED) to emit light. The radius of curvature of the display portion is 10 mm. The raised and recessed ridges of the fingerprint can also be accurately captured in the bent portion of the display portion. Because the bent portion of the display portion is accurately sensed, fingerprint recognition can be expected to be performed on the side and edge of a portable information terminal, as shown in FIGS. 21A and 21B.

[0432] Next, a color image is captured. Figure 34B shows the result of capturing an image printed on paper, with the paper positioned on the display device with the printed side facing the display device. Furthermore, the captured image undergoes image correction based on pre-measured white and black display detection values. Additionally, during image correction, portions of the captured image whose detection values ​​deviate significantly from these values ​​are corrected to black display values.

[0433] In this embodiment, an organic photodiode (OPD) with absorption over a wide visible area is used. Therefore, the R, G, and B colors of the organic EL element OLED are time-divided and emitted sequentially. Monochrome image data of each of the R, G, and B colors is captured using the OPD, and the three image data are combined to obtain a color image. In this embodiment, a global shutter mode is used, employing the memory function shown in Figure 18B for high-brightness emission, to obtain a color image at 1 / 2 Hz. The imaging conditions are as follows: the brightness of red is 750 cd / m², the brightness of green is 1650 cd / m², and the brightness of blue is 370 cd / m². For each color, the exposure time is 1.6 msec, and the readout time is 250 msec. As confirmed by Figure 34B, the display device of this embodiment can capture color images well.

[0434] Next, the coin is photographed. Figure 35A is a photograph showing the camera in its current state. Figure 35B shows the result of photographing the coin with it positioned on the display device.

[0435] The details of the imaging method are the same as those for color image imaging. The imaging conditions are as follows: the brightness of red is 340 cd / m², the brightness of green is 1700 cd / m², and the brightness of blue is 150 cd / m². The exposure time for each color is 1.85 msec. As can be confirmed by Figure 34B, the display device of this embodiment can be used to accurately capture the pattern of a coin. Example 3

[0436] In this embodiment, the results of manufacturing the light-receiving element and evaluating its characteristics are described.

[0437] In this embodiment, device 1 and comparator 2 are used as light-receiving element manufacturing devices. The structure of device 1 is common to the light-emitting element, and it includes a stacked structure in which the light-emitting layer of the light-emitting element can be replaced with the active layer of the light-receiving element. Note that the structure of device 1 is applied to the organic photodiode (OPD) included in the display device of embodiment 2. The structure of comparator 2 is not common to the light-emitting element, and it includes a stacked structure suitable for an image sensor.

[0438] The chemical formulas of the materials used in this embodiment are shown below.

[0439] [Chemical Formula 1]

[0440] Table 1 shows the component structure of the light-receiving element in this embodiment. Device 1 and comparative device 2 are described with reference to Table 1.

[0441] [Table 1] First electrode First buffer layer active layer Second buffer layer second electrode Devices 1 APC\ITSO 100 / 100 nm PCPPn :MoOx (=2:1) 15 nm PCPPn 40 nm C 70:DBP=9:1 60 nm 2mDBT BPDBq-II 10 nm NBPhen 10 nm LiF 1 nm Ag:Mg (=10:1) 9 nm ITO 40 nm Compare Devices 2 Ti\Al\Ti 50\200\5 nm C 70 10 nm MoOx 60 nm ITO 40 nm

[0442] [Device 1] As shown in Table 1, in device 1, a two-layer structure is used as the first electrode, consisting of an alloy film of silver (Ag), palladium (Pd) and copper (Cu) (Ag-Pd-Cu(APC)) with a thickness of approximately 100 nm and an indium tin oxide (ITSO) film containing silicon oxide with a thickness of approximately 100 nm.

[0443] The first buffer layer of device 1 is a layer corresponding to the hole injection layer and hole transport layer of the light-emitting element.

[0444] First, 3-[4-(9-phenanthyl)-phenyl]-9-phenyl-9H-carbazole (abbreviated as PCPPn) and molybdenum oxide are co-deposited at a weight ratio of PCPPn:molybdenum oxide = 2:1, thereby forming a layer corresponding to the hole injection layer. The thickness of the layer corresponding to the hole injection layer is approximately 15 nm.

[0445] Next, PCPPn is deposited with a layer corresponding to the hole transport layer at a thickness of approximately 40 nm.

[0446] Fullerene (C70) and tetraphenyldibenzo-indenopyrene (DBP) were co-deposited at a weight ratio of C70:DBP = 9:1 to form the active layer of device 1. The thickness of the active layer is approximately 60 nm.

[0447] The second buffer layer of device 1 is the layer corresponding to the electron transport layer and electron injection layer of the light-emitting element.

[0448] First, 2-[3'-(dibenzothiophene-4-yl)biphenyl-3-yl]dibenzo[f,h]quinoline (abbreviated as: 2mDBTBPDBq-II) and 2,9-bis(naphthyl-2-yl)-4,7-diphenyl-1,10-phenoline (abbreviated as: NBPhen) are sequentially vapor-deposited with a thickness of approximately 10 nm to form layers corresponding to the electron transport layer.

[0449] Next, lithium fluoride (LiF) is deposited at a thickness of approximately 1 nm to form a layer corresponding to the electron injection layer.

[0450] Silver (Ag) and magnesium (Mg) are co-deposited at a volume ratio of 10:1 with a thickness of approximately 9 nm, and then indium tin oxide (ITO) is formed by sputtering with a thickness of approximately 40 nm, thereby forming the second electrode of device 1.

[0451] Device 1 is manufactured using the above process.

[0452] [Comparator 2] As shown in Table 1, in the comparison device 2, a three-layer structure of a titanium film with a thickness of approximately 50 nm, an aluminum film with a thickness of approximately 200 nm, and a titanium film with a thickness of approximately 5 nm is used as the first electrode.

[0453] The first buffer layer of the comparator device 2 is deposited by vapor deposition of fullerene (C70) with a thickness of approximately 10 nm.

[0454] Similar to device 1, fullerene (C70) and DBP were co-deposited at a weight ratio of C70:DBP = 9:1 to form the active layer of comparison device 2. The thickness of the active layer is approximately 60 nm.

[0455] The second buffer layer of comparator 2 is deposited by vapor deposition of molybdenum oxide with a thickness of approximately 60 nm.

[0456] The second electrode of the comparator device 2 is formed by sputtering ITO with a thickness of approximately 40 nm.

[0457] Comparator device 2 is manufactured using the above process.

[0458] [Current density-voltage characteristics] Figure 36 shows the results of the current density-voltage characteristics of evaluation device 1 and comparison device 2. In Figure 36, the vertical axis represents voltage (V) and the horizontal axis represents current density (A / cm2).

[0459] In this embodiment, the light-receiving area of ​​the light-receiving element is 2mm × 2mm.

[0460] Light with a wavelength of λ = 550 nm was irradiated onto the photoreceiving element of this embodiment at a rate of 12.5 μW / cm², and the current density-voltage characteristics were measured. Here, the applied voltage is typically the value when the bias voltage applied to the EL element is positive. That is, a high potential on the first electrode side and a low potential on the second electrode side is equivalent to a positive voltage.

[0461] As shown in Figure 36, when the voltage is below -2V, the photocurrent of device 1 is equal to that of comparator device 2, which is a good value. Furthermore, it can be seen that the dark current of device 1 is lower than that of comparator device 2.

[0462] As described above, in this embodiment, by using a light-receiving element whose structure is the same as that of the light-emitting element, good current density-voltage characteristics can be obtained.

[0463] As shown in Example 2 above, the display device of one embodiment of the present invention, which uses the structure of device 1 in this embodiment to manufacture an organic photodiode (OPD), can perform photography well. Example 4

[0464] In this embodiment, the results of manufacturing the light-receiving element and evaluating its characteristics are described.

[0465] In this embodiment, devices 3, 4, 5, and 6 are used as light-receiving elements. The structure of device 1 is integrated with that of the light-emitting element, and it includes a stacked structure in which the light-emitting layer of the light-emitting element can be replaced with the active layer of the light-receiving element.

[0466] Table 2 shows the specific structure of the device used in this embodiment. Note that the device structure in this embodiment is the same as that of device 1 in Example 3, and the manufacturing method can be referred to Example 3. The chemical formulas of the materials used in this embodiment are shown below.

[0467] [Table 2] First electrode First Buffer layer active layer Second buffer layer second electrode Devices APC\ITSO 100 / 40 nm * C 70:DBP=9:1 60 nm 2mDBT BPDBq-II 10 nm NBPhen 10 nm LiF 1 nm Ag:Mg (=10:1) 10 nm ITO 40 nm * First buffer layer Device 3 PCPPn:MoOx (=2:1) 15 nm PCPPn 40 nm Device 4 PCPPn:MoOx (=2:1) 15 nm BPAFLP 40 nm Device 5 PCPPn:MoOx (=2:1) 15 nm DBT3P-II 40 nm Device 6 BBABnf:ALD-MP001Q (=10:1) 15 nm BBABnf 40 nm

[0468] [Chemical Formula 2]

[0469] As shown in Table 2, the materials used for the first buffer layer are different in the four devices of this embodiment. In each device, the first buffer layer comprises two layers.

[0470] In devices 3, 4, and 5, PCPPn and molybdenum oxide are co-deposited at a weight ratio of PCPPn:molybdenum oxide = 2:1 to form the first layer of the first buffer layer. The thickness of the first layer is approximately 15 nm.

[0471] The second layer of the first buffer layer of device 3 is deposited by evaporation with a thickness of approximately 40 nm using PCPPn.

[0472] The second layer of the first buffer layer of device 4 is deposited by vapor deposition of 4-phenyl-4'-(9-phenylenzo-9-yl)triphenylamine (abbreviated as: BPAFLP) with a thickness of approximately 40 nm.

[0473] The second layer of the first buffer layer of device 5 is deposited by vapor deposition of 1,3,5-tris(dibenzothiophene-4-yl)benzene (abbreviated as: DBT3P-II) with a thickness of approximately 40 nm.

[0474] N,N-bis(4-biphenyl)-6-phenylbenzo[b]naphtho[1,2-d]furan-8-amine (abbreviated as BBABnf) and ALD-MP001Q (Analysis Kobo Co., Ltd., Material No.: 1S20180314) were co-deposited at a weight ratio of BBABnf:ALD-MP001Q = 10:1, thereby forming the first layer of the first buffer layer of device 6. The thickness of the first layer is approximately 15 nm. ALD-MP001Q exhibits electron accepting properties for BBABnf.

[0475] The second layer of the first buffer layer of device 6 is deposited by BBABnf with a thickness of approximately 40 nm.

[0476] [Current density-voltage characteristics] Figures 37A and 37B show the results of evaluating the current density-voltage characteristics of devices 3 to 6. In Figures 37A and 37B, the vertical axis represents voltage (V) and the horizontal axis represents current density (μA / cm²).

[0477] The light-receiving area of ​​the light-receiving element in this embodiment is 2mm × 2mm.

[0478] Light with a wavelength of 550 nm was irradiated onto the photoreceiving element of this embodiment at a rate of 12.5 μW / cm², and the current density-voltage characteristics were measured. Figure 37A shows the measurement results. Here, the applied voltage is typically the value when the bias voltage applied to the EL element is positive. That is, a high potential on the first electrode side and a low potential on the second electrode side is equivalent to a positive value.

[0479] In addition, the current density-voltage characteristics were also measured under the condition that no light was irradiated onto the light-receiving element of this embodiment (0 μW / cm 2). Figure 37B shows the measurement results.

[0480] As shown in Figures 37A and 37B, when the material of the first buffer layer is changed, the driving voltage of the light-receiving element differs, but the saturation current remains almost unchanged. Therefore, it can be concluded that the material of the first buffer layer has almost no impact on the luminous efficiency of the light-receiving element manufactured in this embodiment.

[0481] [Wavelength dependence of external quantum efficiency] Figures 38A and 38B show the results of evaluating the wavelength dependence of the external quantum efficiency of devices 3 to 6. In Figures 38A and 38B, the vertical axis represents the external quantum efficiency (%), and the horizontal axis represents the wavelength (nm).

[0482] The wavelength dependence of the external quantum efficiency was calculated by irradiating the light-receiving element of this embodiment with light of wavelengths from 375 nm to 750 nm at intervals of 25 nm at a rate of 12.5 μW / cm². Figure 38A shows the results at a voltage of -1 V, and Figure 38B shows the results at a voltage of -4 V.

[0483] As shown in Figures 38A and 38B, even if the material of the first buffer layer is changed, the external quantum efficiency remains almost unchanged.

[0484] As described above, the results of this embodiment show that a light-receiving element exhibits good characteristics regardless of the material of the first buffer layer. Therefore, it can be seen that the structure of the light-receiving element in a display device according to one embodiment of the present invention can be integrated with various light-emitting elements, and good characteristics can be obtained. Example 5

[0485] In this embodiment, the results of manufacturing the light-receiving element and evaluating its characteristics are described.

[0486] In this embodiment, the structure of the light-receiving element is integrated with that of the light-emitting element, including a stacked structure in which the light-emitting layer of the light-emitting element can be replaced with the active layer of the light-receiving element.

[0487] The light-receiving element manufactured in this embodiment has the same structure as the device 1 manufactured in Example 3 (refer to Table 1).

[0488] In the evaluation of this embodiment, light with wavelengths from 375 nm to 750 nm was irradiated onto the light-receiving element of this embodiment at intervals of 25 nm at a rate of 12.5 μW / cm², and the wavelength dependence of the external quantum efficiency was calculated. The voltage was -4 V. As the measurement temperature, seven conditions ranging from 20 °C to 80 °C were set at intervals of 10 °C, thereby calculating the temperature dependence of the external quantum efficiency.

[0489] Figure 39 shows the wavelength dependence of the light-receiving sensitivity of the light-receiving element. Figure 40 shows the temperature dependence of the light-receiving sensitivity of the light-receiving element. The vertical axis of Figures 39 and 40 represents the external quantum efficiency (EQE).

[0490] The results of this embodiment confirm that as the temperature of the light-receiving element increases, the external quantum efficiency also increases gradually. The light-receiving element of this embodiment was confirmed to operate normally without drastic efficiency changes between 20°C and 80°C.

[0491] As described above, in this embodiment, a light-receiving element whose structure is similar to that of a light-emitting element (organic EL element) is manufactured, and it can be confirmed that the light-receiving element can be used over a wide temperature range. Example 6

[0492] In this embodiment, the results of manufacturing the light-receiving element and evaluating its characteristics are described.

[0493] In this embodiment, the structure of the light-receiving element is integrated with that of the light-emitting element, including a stacked structure in which the light-emitting layer of the light-emitting element can be replaced with the active layer of the light-receiving element.

[0494] Table 3 shows the specific structure of the light-receiving element used in this embodiment. The light-receiving elements manufactured in Embodiments 3 to 5 (refer to Tables 1 and 2) all have a structure that receives light from the second electrode side, but the light-receiving element manufactured in this embodiment receives light from the first electrode side.

[0495] The main difference between the light-receiving element manufactured in this embodiment and device 1 manufactured in embodiment 3 (refer to Table 1) is that the first electrode is an indium tin oxide (ITO) film with a thickness of approximately 70 nm; and the second electrode is an aluminum (Al) film with a thickness of approximately 150 nm. Furthermore, the same materials are used as those in device 1 for the first buffer layer, active layer, and second buffer layer, but the film thickness is different from that of device 1.

[0496] [Table 3] First electrode First buffer layer active layer Second buffer layer second electrode ITO 70 nm PCPPn :MoOx (=2:1) 20 nm PCPPn 20 nm C 70:DBP=9:1 50 nm 2mDBT BPDBq-II 20 nm NBPhen 15 nm LiF 1 nm Al 150 nm

[0497] In the evaluation of this embodiment, light with wavelengths from 375 nm to 900 nm was irradiated onto the light-receiving element of this embodiment at a rate of 12.5 μW / cm² to calculate the wavelength dependence of the external quantum efficiency. Light with wavelengths from 375 nm to 750 nm was irradiated at 25 nm intervals, and light with wavelengths from 750 nm to 900 nm was irradiated at 10 nm intervals. Voltages from -6 V to 1 V were set at 0.25 V intervals.

[0498] Figure 41 shows the wavelength dependence of the light-receiving sensitivity of the light-receiving element. The vertical axis of Figure 41 represents the external quantum efficiency (EQE). Figure 42 shows the current density-voltage characteristics of the light-receiving element.

[0499] In this embodiment, a visible light sensor material is used in the active layer. The results from this embodiment confirm that it exhibits light-receiving sensitivity in the visible light region (above 450 nm and below 650 nm). The light-receiving element in this embodiment functions normally as a visible light sensor.

[0500] As described above, in this embodiment, a light-receiving element whose structure is co-located with the light-emitting element (organic EL element) and which receives light from the first electrode side has good characteristics. Example 7

[0501] In this embodiment, the results of manufacturing the light-receiving element and evaluating its characteristics are described.

[0502] In this embodiment, the structure of the light-receiving element is integrated with that of the light-emitting element, including a stacked structure in which the light-emitting layer of the light-emitting element can be replaced with the active layer of the light-receiving element.

[0503] Table 4 shows the specific structure of the light-receiving element used in this embodiment. The light-receiving element manufactured in this embodiment receives light from the first electrode side. The difference between the light-receiving element manufactured in this embodiment and the light-receiving element manufactured in Embodiment 6 (refer to Table 3) is the thickness of a portion of the layer; the other structures are the same.

[0504] [Table 4] First electrode First buffer layer active layer Second buffer layer second electrode ITO 70 nm PCPPn :MoOx (=2:1) 15 nm PCPPn 40 nm C 70:DBP=9:1 60 nm 2mDBT BPDBq-II 10 nm NBPhen 10 nm LiF 1 nm Al 150 nm

[0505] In this embodiment, continuous drive testing is performed while the manufactured light-receiving element is illuminated, and the illuminance dependence of reliability is evaluated. In the continuous drive test, the illumination conditions (hereinafter also referred to as stress illuminance) are 20 klx, 40 klx, and 100 klx, the voltage is -4V, the temperature is 25°C, the drive time is 210 hr, and the light source is a white LED. Multiple elements are evaluated under the same conditions. In the evaluation, 11 elements (n=11) are irradiated at 20 klx, 5 elements (n=5) at 40 klx, and 6 elements (n=6) at 100 klx.

[0506] Figures 43A to 43C show the normalized current-time characteristics of the light-receiving element. Figure 43A shows the results at a stress illuminance of 20 klx, Figure 43B shows the results at a stress illuminance of 40 klx, and Figure 43C shows the results at a stress illuminance of 100 klx.

[0507] Figure 44 shows the relationship between the time until the current value decreases by 5% and the stress illuminance.

[0508] As can be confirmed from Figures 43 and 44, there is a tendency for the current reduction during continuous drive to be promoted when the stress illuminance is increased.

[0509] Next, the current change of the light-receiving element before and after continuous drive testing was confirmed. Figure 45 shows the normalized current value after continuous drive testing – measured illuminance characteristics. The normalized current value after continuous drive testing was calculated using the current value before continuous drive testing as 1, under a stress illuminance of 40 klx. Five elements (n=5) were evaluated under the same conditions.

[0510] As shown in Figure 45, in areas with high illuminance, the change in current value before and after continuous drive testing is significant, while in areas with low illuminance (especially below 1 klx), the change in current value before and after testing is smaller. That is to say, it can be seen that even if the light-receiving element of this embodiment deteriorates due to illuminance stress, the characteristics in areas with low illuminance are less prone to change compared to those in areas with high illuminance. Because the light-receiving element of this embodiment exhibits good reliability in areas with low illuminance, it is suitable for applications where the measurement is performed under low illuminance, such as fingerprint imaging.

[0511] C1: Capacitor C2: Capacitor G1: Wiring G2: Wiring L1: Shortest distance L2: Shortest distance L3: Thickness L4: and M1: Transistor M2: Transistor M3: Transistor M4: Transistor M5: Transistor M6: Transistor M7: Transistor OUT1: Wiring OUT2: Wiring PD: Light receiving element PIX1: Pixel Circuit PIX2: Pixel Circuit V0: Wiring V1: Wiring V2: Wiring V3: Wiring V4: Wiring V5: Wiring 10A: Display device 10B: Display device 10C: Display device 10D: Display device 10E: Display device 10F: Display device 10G: Display device 10H: Display device 10J: Display device 10K: Display device 10L: Display device 10M: Display device 10N: Display device 10P: Display device 10Q: Display device 21: Glowing 21B: Light 21G: Light 21R: Light 22: Light 23a: Stray light 23b: Stray light 23c: Stray light 23d: Stray Light 30K: Evaluation Devices 30N: Evaluation device 30P: Evaluation device 30Q: Evaluation Devices 31: pixels 41: Transistor 42: Transistor 42B: Transistor 42G: Transistor 42R: Transistor 43: Drive circuit 44: Drive Circuit 50A: Display device 50B: Display device 51:Substrate 52: fingers 53: Layer with light-receiving element 55: Layer with transistor 57: Layer with light-emitting elements 59:Substrate 100A: Display device 100B: Display device 100C: Display device 110: Light receiving element 112: Public Floor 113: Emissive layer 114: Public Layer 114a: Public Layer 114b: Public Layer 115: Common Electrode 116: Protective layer 116a: Inorganic insulating layer 116b: Organic insulating layer 116c: Inorganic insulating layer 142: Adhesive layer 143: Space 146: Lens Array 149: Lens 151:Substrate 152:Substrate 153:Substrate 154:Substrate 155: Adhesive layer 156: Adhesive layer 157: Insulation layer 158: Light-shielding layer 159: Resin layer 159p: Opening 160: Gap 162: Display Section 164: Circuit 165: Wiring 166: Conductive layer 167: Conductive layer 168: Conductive layer 169B: Conductive layer 169G: Conductive layer 169R: Conductive layer 172:FPC 173:IC 181: Pixel Electrode 182: Buffer layer 183: Active layer 184: Buffer layer 186: Hole Transport Layer 190: Light-emitting element 190B: Light-emitting element 190G: Light-emitting element 190R: Light-emitting element 191: Pixel Electrode 191B: Pixel Electrode 191G: Pixel Electrode 191R: Pixel Electrode 192: Buffer layer 193: Emissive Layer 193B: Emissive layer 193G: Emissive layer 193R: Emissive layer 194: Buffer layer 196B: Hole Transport Layer 196G: Hole Transport Layer 196R: Hole Transport Layer 197: Optical Adjustment Layer 197B: Optical Adjustment Layer 197G: Optical Adjustment Layer 201: Transistor 202: Transistor 203: Transistor 204: Connecting part 205: Transistor 206: Transistor 207: Transistor 208: Transistor 209: Transistor 210: Transistor 211: Insulation layer 212: Insulation layer 213: Insulation layer 214: Insulation layer 214a: Insulation layer 214b: Insulation layer 215: Insulation layer 216: Partition wall 217: Partition wall 219a: Light-shielding layer 219b: Spacers 219c: Sidewall 220: Gap 221: Conductive layer 222a: Conductive layer 222b: Conductive layer 223: Conductive layer 225: Insulation layer 228: Area 231: Semiconductor layer 230: Area 231i: Channel Formation Area 231n: Low resistance region 242: Connection Layer 6500: Electronic Devices 6501: Casing 6502: Display Unit 6503: Power button 6504: Button 6505: Speaker 6506: Microphone 6507: Camera 6508: Light Source 6510: Protective components 6511: Display panel 6512: Optical components 6513: Touch sensor panel 6515:FPC 6516:IC 6517: Printed Circuit Board 6518: Battery 7000: Display Section 7100: Television 7101: Outer casing 7103: Bracket 7111: Remote Control 7200: Notebook PC 7211: Outer casing 7212: Keyboard 7213: Pointing device 7214: External connection port 7300: Digital Kanban 7301: Outer casing 7303: Speaker 7311: Information Terminal Equipment 7400: Digital Kanban 7401: Pillar 7411: Information Terminal Equipment 9000: Casing 9001: Display Unit 9003: Speaker 9005: Operation Key 9006: Connecting terminal 9007: Sensor 9008: Microphone 9050: Illustration 9051: News 9052: News 9053: News 9054: News 9055: Hinges 9101: Portable Information Terminal 9102: Portable Information Terminal 9200: Portable Information Terminal 9201: Portable Information Terminal

Claims

1. A display device, comprising: a first substrate; a second substrate; a light-receiving element; a light-emitting element; and a resin layer, wherein, Each of the light-receiving element, the light-emitting element, and the resin layer is located between the first substrate and the second substrate. The light-receiving element includes a first pixel electrode on the first substrate, an active layer on the first pixel electrode, and a common electrode on the active layer. The light-emitting element includes a second pixel electrode on the first substrate, a light-emitting layer on the second pixel electrode, and the common electrode on the light-emitting layer. The resin layer is disposed between the light-receiving element and the light-emitting element. The cross-sectional shape of the resin layer includes an inverted cone shape. The common electrode includes a portion that overlaps with the resin layer.

2. A display device, comprising: a first substrate; a second substrate; a light-receiving element; a first light-emitting element; a second light-emitting element; and a resin layer, wherein, Each of the light-receiving element, the first light-emitting element, the second light-emitting element, and the resin layer is located between the first substrate and the second substrate. The light-receiving element includes a first pixel electrode on the first substrate, an active layer on the first pixel electrode, and a common electrode on the active layer. The first light-emitting element includes a second pixel electrode on the first substrate, a first light-emitting layer on the second pixel electrode, and the common electrode on the first light-emitting layer. The second light-emitting element includes a third pixel electrode on the first substrate, a second light-emitting layer on the third pixel electrode, and the common electrode on the second light-emitting layer. The first light-emitting element is disposed adjacent to the resin layer. The second light-emitting element is disposed adjacent to the resin layer. The resin layer is disposed between the light-receiving element and the first light-emitting element. The resin layer has a cross-sectional shape that includes an inverted cone shape, and the common electrode includes a portion that overlaps with the resin layer.

3. A display device, comprising: a first substrate; a second substrate; a light-receiving element; a first light-emitting element; a second light-emitting element; and a resin layer, wherein, Each of the light-receiving element, the first light-emitting element, the second light-emitting element, and the resin layer is located between the first substrate and the second substrate. The light-receiving element includes a first pixel electrode on the first substrate, an active layer on the first pixel electrode, and a common electrode on the active layer. The first light-emitting element includes a second pixel electrode on the first substrate, a first light-emitting layer on the second pixel electrode, and the common electrode on the first light-emitting layer. The second light-emitting element includes a third pixel electrode on the first substrate, a second light-emitting layer on the third pixel electrode, and the common electrode on the second light-emitting layer. The first light-emitting element is disposed adjacent to the resin layer. The second light-emitting element is disposed adjacent to the resin layer. The resin layer is disposed between the light-receiving element and the first light-emitting element. The resin layer is not disposed between at least a portion of the light-receiving element and the second light-emitting element. The cross-sectional shape of the resin layer includes an inverted conical shape. The common electrode includes a portion overlapping the resin layer.

4. The display device according to claim 1 further includes a common layer, wherein, The common layer includes a portion located between the first pixel electrode and the common electrode and a portion located between the second pixel electrode and the common electrode.

5. The display device according to request item 1, wherein, The resin layer is configured to absorb at least a portion of the light emitted from the light-emitting element.

6. The display device according to request item 2 or 3 further includes a common layer, wherein, The common layer includes a portion located between the first pixel electrode and the common electrode, a portion located between the second pixel electrode and the common electrode, and a portion located between the third pixel electrode and the common electrode.

7. The display device according to request item 2 or 3, wherein, The resin layer is configured to absorb at least a portion of the light emitted from the first light-emitting element.

8. The display device according to any one of claims 1 to 3 further comprises an adhesive layer, wherein, The adhesive layer is located between the common electrode and the second substrate.

9. A display device according to any one of claims 1 to 3, wherein, In a top view of the display device, the light-receiving element is surrounded by the resin layer.

10. A display device according to any one of claims 1 to 3, wherein, The active layer contains organic compounds.

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