Methods for manufacturing a light-emitting diode (LED) supply substrate, a method for manufacturing an LED display, a method for manufacturing a segmented unit of an LED display, and a method for manufacturing a component supply substrate.

Abstract

This invention discloses a method for manufacturing a light-emitting diode (LED) supply substrate, which is used to transfer a plurality of LEDs. The method comprises: a first mounting step, which mounts a plurality of LEDs on the supply substrate; a selective removal step, which selectively removes defective LEDs from the supply substrate; and a second mounting step, which transfers normal LEDs to the positions on the supply substrate where the defective LEDs were previously disposed. In this manner, a method for manufacturing an LED supply substrate is provided, which can manufacture an LED supply substrate capable of transferring a plurality of normal LEDs to a supply destination.

Description

Technical Field

[0001] This invention relates to a method for manufacturing a light-emitting diode (LED) supply substrate, a method for manufacturing an LED display, a method for manufacturing a segmentation unit of an LED display, and a method for manufacturing a component supply substrate. Prior Technology

[0002] In recent years, there has been active development and use of displays using miniature and micro-emitting diodes (LEDs). One of the major challenges in their practical manufacturing lies in the method of assembling tiny LEDs onto the display panel. As an assembly method, the microstructure transfer technology using stamping has attracted much attention (e.g., Patent Document 1, Non-Patent Document 1).

[0003] When assembling an FHD (1920×1080) display panel using this technology, if the light-emitting diodes (LEDs) are transferred one by one from the LED supply substrate, 2,073,600 pixels need to be transferred. In manufacturing color displays, at least three miniature or micro LEDs (red, green, and blue) need to be transferred for each pixel. If one element is transferred at a time, approximately 6 million transfers are required. For a 4K display, this would require over 24 million transfers. Even with this level of effort in assembling the display, using a supply substrate containing a large number of defective LEDs presents the problem of having to reconfigure (i.e., repair) the normal LEDs on the display panel substrate. Therefore, a supply substrate containing only normal LEDs is desirable. Furthermore, this problem is essentially the same even when transferring LEDs from the supply substrate to the display panel substrate simultaneously.

[0004] There exists a laser lift-off method as a high-speed and efficient transfer method to replace imprinting. Patent Document 2 shows a method in which a release layer is provided between the micro-functional element to be transferred and the substrate, and the release layer is ablated during laser irradiation, thereby separating the substrate from the element. A disadvantage of this method is that some release layer material adheres to the side of the micro-functional element, so cleaning is required after transfer, making it less than ideal. As a method that does not use a release layer, there are methods that utilize the pressure-sensitive adhesion of PDMS (polydimethylsiloxane), a silicone resin (Patent Document 3, Non-Patent Document 2). With this method, since excess material does not adhere to the micro-functional element after laser lift-off, there is increasing expectation for laser lift-off methods using silicone resin. Patent Document 4 shows an example of an apparatus for transferring micro-functional elements by laser lift-off.

[0005] In the following description, an example of the conventional method for manufacturing a light-emitting diode (LED) display panel by laser stripping is illustrated with reference to FIG9. FIG9(I) to FIG9(III) show an example of the steps for manufacturing a supply substrate from an LED manufacturing substrate. In the above-described printing method, the step of transferring LEDs one by one to the display panel substrate is shown in FIG9(IV) and 9(V).

[0006] In Figure 9(I), 1 is a sapphire substrate serving as the starting substrate. A plurality of GaN-based light-emitting diodes 2 are formed on one side of the surface of this substrate, each individually processed into a separate state. The light-emitting diodes 2 further include electrodes 3. 4 is a first supply substrate, which is formed of a substrate 41 and a silicone resin layer 42. The substrate 41 is formed of quartz, and the silicone resin layer 42 is formed on the substrate 41 as an adhesive layer.

[0007] As shown in Figure 9(I), the first supply substrate 4 and the starting substrate (sapphire substrate) 1 are configured such that the light-emitting diode 2 faces the adhesive layer 42 and the gap between them becomes constant and is at an optimal distance. In this state, laser light 6 is irradiated onto the surface side of the starting substrate 1 where the light-emitting diode 2 has not yet been formed. The laser light 6 passes through the starting substrate 1 and reaches the vicinity of the interface between the surface of the starting substrate 1 and the light-emitting diode 2, thereby causing slight laser ablation of the GaN on the side of the light-emitting diode 2 near the interface. This is called laser stripping, and the light-emitting diode 2 separates from the starting substrate 1 and is emitted toward the first supply substrate 4 facing the light-emitting diode 2. As a result, the emitted light-emitting diode 2 flies to the surface of the adhesive layer (silicone resin layer) 42 and temporarily adheres to the surface of the adhesive layer 42. By scanning the desired area of ​​the starting substrate 1 with laser light 6, all the desired light-emitting diodes 2 on the starting substrate 1 can be transferred to the first supply substrate 4, completing the first supply substrate 4 in Figure 9(II). In this case, since the GaN component will not adhere to the light-emitting diode 2 as a residue due to the erosion, it is not necessary to clean the attachments of a portion of the stripping layer as is required in the case of the stripping layer (including organic polymers).

[0008] Next, as shown in FIG9(III), a second supply substrate 5 is prepared, which has a substrate 51 and a silicone resin layer 52 serving as an adhesive layer on the substrate 51. Then, this second supply substrate 5 and the first supply substrate 4 in FIG9(II) are arranged such that the light-emitting diode 2 faces the adhesive layer 52 and the gap between them becomes constant and is at an optimal distance.

[0009] In this state, the second supply substrate 5 is completed by irradiating the desired area of ​​the surface of the first supply substrate 4 where the light-emitting diode 2 is not disposed while scanning laser light 6 is applied, and the light-emitting diode 2 with electrode 3 is temporarily attached to the second supply substrate 5 in an upside-down state. In this way, the second supply substrate 5, which is a light-emitting diode supply substrate in which the electrode 3 is disposed outward, can be manufactured.

[0010] Next, a display panel substrate 39, as shown in FIG9(IV), is prepared as the supply destination. The display panel substrate 39 has electrodes and wiring (not shown in the figure). This display panel substrate 39 and the second supply substrate 5 are configured such that the gap between them becomes constant and they are spaced at an optimal distance. In this state, laser light 6 is irradiated from the surface side of the second supply substrate 5 where no light-emitting diodes 2 are disposed. Through this laser stripping method, as shown in FIG9(V), a plurality of light-emitting diodes 2 are transferred from the second supply substrate 5 to the display panel substrate 39.

[0011] In this manner, the electrodes 3 of the light-emitting diode 2 are configured to make electrical contact with the desired electrode positions on the display panel substrate 39 using laser stripping, thereby completing the display panel 300 (Fig. 9(V)).

[0012] However, even when manufacturing displays using laser stripping, which allows for faster transfer than imprinting, a problem arises when using a supply substrate contaminated with a large number of defective light-emitting diodes (LEDs): it becomes necessary to reconfigure (i.e., repair) the normal LEDs on the display substrate. Therefore, a supply substrate containing only normal LEDs is required.

[0013] [Previous Technical Documents] [Patent Literature] Patent Document 1: U.S. Patent No. 7,943,491 Patent document 2; Japanese Patent No. 5319533 Patent Document 3: U.S. Patent No. 5,955,644 Patent Document 4: Japanese Patent Publication No. 2020-4478

[0014] [Non-patent literature] Non-patent literature 1: Matthew A. Meitl, Zheng-Tao Zhu, Vipan Kumar, Keon Jae Lee, Xue Feng, Yonggang Y. Huang, Ilesanmi Adesida, Ralph G. Nuzzo and John A. Rogers, "Transfer printing by kinetic control of adhesion to an elastomeric stamp", Nature Materials, Volume 5, 33-38 (2006). Non-patent literature 2: Kristin M. Charipar, Raymond CY Auyeung, Heungsoo Kim, Nicholas A. Charipar and Alberto Pique, “Use of an Elastomeric Donor for LIFT of Metal Foils”, JLMN-Journal of Laser Micro / Nanoengineering, Vol. 13, No. 2, 2018. Summary of the Invention

[0015] The problem that the invention aims to solve: As explained above, regardless of whether the imprinting method or the laser stripping method is used, when the light-emitting diodes supplied to the supply substrate (the second supply substrate 5 in Figure 9) of the display panel substrate contain defective light-emitting diodes, the defective light-emitting diodes are transferred to the display panel substrate, resulting in a low normal transfer yield.

[0016] The present invention was made to solve the above-mentioned problems. The object of the present invention is to provide the following manufacturing methods: a method for manufacturing a light-emitting diode supply substrate capable of manufacturing a light-emitting diode supply substrate, the light-emitting diode supply substrate being capable of transferring a plurality of normal light-emitting diodes to a supply destination; a method for manufacturing a high-yield light-emitting diode display; a method for manufacturing a segmentation unit of a high-yield light-emitting diode display; and a method for manufacturing a component supply substrate capable of manufacturing a component supply substrate, the component supply substrate being capable of transferring a plurality of normal components to a supply destination.

[0017] Methods for solving the problem: To address the aforementioned issues, the present invention provides a method for manufacturing a light-emitting diode (LED) supply substrate, which is a method for manufacturing an LED supply substrate for transferring a plurality of LEDs to a supply destination, characterized in that it comprises: The first mounting step involves mounting a plurality of light-emitting diodes on a supply substrate; The selective removal step involves selectively removing defective light-emitting diodes from the aforementioned supply substrate; and The second mounting step involves transferring a normal light-emitting diode to the position on the aforementioned supply substrate where the aforementioned defective light-emitting diode was previously disposed.

[0018] In this manner, a light-emitting diode (LED) supply substrate containing only normal LEDs can be manufactured. By using an LED supply substrate manufactured in this manner, multiple normal LEDs can be transferred together or selectively to a supply destination. That is, according to the LED supply substrate manufacturing method of the present invention, an LED supply substrate capable of transferring multiple normal LEDs together or selectively to a supply destination can be manufactured.

[0019] Furthermore, since the light-emitting diode supply substrate manufactured by the method of the present invention does not contain defective light-emitting diodes, the occurrence of light emission defects during the manufacture of light-emitting diode displays or their segmentation units can be significantly reduced. Therefore, light-emitting diode displays or their segmentation units can be manufactured with high yield and high efficiency.

[0020] Preferably, prior to the selective removal step, a determination step is further included to determine whether each of the aforementioned light-emitting diodes on the aforementioned supply substrate is normal.

[0021] In this way, defective light-emitting diodes can be reliably classified and removed.

[0022] Furthermore, it is preferable to perform the aforementioned determination step by photoluminescence method.

[0023] If the aforementioned determination steps are performed using photoluminescence, the determination can be carried out non-contactly.

[0024] Preferably, a selective removal step, a second mounting step, or both are performed using laser stripping.

[0025] If a selective removal step, a second mounting step, or both of the above are performed using laser stripping, the light-emitting diode supply substrate can be manufactured more efficiently.

[0026] Preferably, the laser used in the selective removal step, the second mounting step, or the laser stripping method in both of the above is an excimer laser.

[0027] In this way, time-compressed pulsed laser light can be generated. By controlling the power supply parameters of the device, such as the pulse transmission voltage, the pulse width and light intensity can be easily controlled, enabling the generation of high-intensity laser light with a single pulse, which is impossible to achieve using other continuous wave oscillation (CW) lasers.

[0028] The laser used in the selective removal step, the second mounting step, or the laser stripping method in both of the above can be a pulsed laser, and the stripping can be performed by irradiating with a single pulse of laser light.

[0029] In this way, the laser used in the selective removal step, the second mounting step, or both of the above need not be limited to an excimer laser, and a laser capable of producing pulsed laser light of the required intensity can be used.

[0030] As the aforementioned light-emitting diode, a light-emitting diode with a longest portion of less than 300 μm can be used.

[0031] In this way, a more efficient transfer can be achieved through laser stripping.

[0032] As the aforementioned light-emitting diode, one of the group consisting of red light-emitting diodes, green light-emitting diodes, and blue light-emitting diodes can be used.

[0033] In this way, it is possible to manufacture monochromatic supply substrates for red, green, and blue light-emitting diodes.

[0034] The aforementioned plurality of light-emitting diodes can be configured such that one or more of the red, green, and blue light-emitting diodes form a group of pixels.

[0035] In this way, during the manufacturing of light-emitting diode displays, the transfer can be performed either simultaneously or on a per-pixel basis.

[0036] Preferably, a substrate comprising a quartz substrate and an adhesive layer disposed on the quartz substrate is used as the supply substrate. In the aforementioned first mounting step, the aforementioned plurality of light-emitting diodes are adhered in a matrix to the surface of the aforementioned adhesive layer of the aforementioned supply substrate.

[0037] In this way, the substrate for supplying light-emitting diodes can be manufactured efficiently.

[0038] Preferably, the aforementioned second mounting step is performed in the following manner: Prepare a supplementary substrate, the supplementary substrate comprising: a quartz substrate, an adhesive layer disposed on the quartz substrate, and a plurality of light-emitting diodes adhered in a matrix to the surface of the aforementioned adhesive layer; The normal light-emitting diode on the aforementioned supplementary substrate is transferred to the position on the aforementioned supply substrate where the aforementioned defective light-emitting diode has been removed.

[0039] This method allows for more efficient manufacturing of light-emitting diode (LED) supply substrates.

[0040] Preferably, between the selective removal step and the second mounting step, a configuration step is further included, which involves configuring the aforementioned supplementary substrate to face the aforementioned supply substrate.

[0041] In this way, the accuracy in the second loading step can be further improved.

[0042] In this case, during the aforementioned configuration steps, it is preferable to perform position alignment so that the position on the aforementioned supply substrate where the aforementioned defective light-emitting diode was previously configured faces the position on the aforementioned supplementary substrate where the aforementioned normal light-emitting diode is located.

[0043] In this way, a normal light-emitting diode can be more accurately mounted in the position where the defective light-emitting diode has been removed.

[0044] As the aforementioned supply substrate, it is preferred to use a substrate formed of synthetic quartz using the aforementioned quartz substrate.

[0045] Synthetic quartz exhibits excellent in-plane film uniformity. Therefore, when synthetic quartz is used in the aforementioned quartz substrate, the gap between opposing substrates for laser lift-off can be controlled.

[0046] Preferably, the quartz substrate of the supplementary substrate is also a substrate formed of synthetic quartz. In this case, for example, when the supplementary substrate is configured parallel to and opposite the supply substrate in the aforementioned configuration step, it is possible to configure it with high precision over the entire surface of the substrate at a certain distance.

[0047] As the aforementioned supply substrate, it can be used on a substrate with facets on the aforementioned quartz substrate.

[0048] In this way, when the supply substrate is placed in a transfer device using laser stripping, the rotation position can be set without error.

[0049] In this case, as the aforementioned supplementary substrate, it is more preferable to use a substrate with facets on the aforementioned quartz substrate.

[0050] In this case, it is preferable that the aforementioned facets are markers indicating orientation.

[0051] In this case, when the supply substrate is placed in a transfer device using laser stripping, the rotation position can be set without error.

[0052] As the aforementioned supply substrate, the aforementioned quartz substrate can be a substrate having one or more of the following groups: letters, symbols, and two-dimensional barcodes.

[0053] As a supplementary substrate, the aforementioned quartz substrate can also be a substrate having one or more of the groups of letters, symbols and two-dimensional barcodes.

[0054] In this way, individual supply substrates and supplementary substrates can be managed.

[0055] The aforementioned letters, symbols, and two-dimensional barcodes can be used as markers to indicate direction.

[0056] The aforementioned letters, symbols, and two-dimensional barcodes can be used to identify individual supply substrates. Furthermore, they can also serve as markers indicating direction.

[0057] In this case, when the supply substrate is placed in a transfer device using laser stripping, individual identification can be performed correctly, and the rotation position can be set without errors.

[0058] As the aforementioned supply substrate, it is preferable to use a substrate formed by a pressure-sensitive adhesive containing silicone as the aforementioned adhesive layer.

[0059] As a supplementary substrate, a substrate formed by a pressure-sensitive adhesive containing silicone can also be used.

[0060] This method provides excellent adhesion. Furthermore, when transferring the LED using laser stripping, impurities do not adhere to the LED. Consequently, after removing the LED once, it can be re-adhere.

[0061] As the aforementioned supply substrate, a substrate in which the distance between the aforementioned matrices is a multiple of the pixel pitch of the display panel or an integer fraction of the pixel pitch can be used.

[0062] In this way, multiple light-emitting diodes can be transferred by laser stripping by performing only minimal movement and controlling the position of the moving laser irradiation without supplying unnecessary position alignment to the substrate.

[0063] Preferably, the aforementioned first mounting step includes: The step of preparing a starting substrate, wherein the starting substrate is a starting substrate on which the aforementioned plurality of light-emitting diodes are fabricated; The step of separating the plurality of light-emitting diodes on the aforementioned starting substrate element by element; and The step of transferring the aforementioned plurality of light-emitting diodes, which are separated element by element, onto the aforementioned supply substrate.

[0064] In this way, the first mounting step can be carried out efficiently and effectively.

[0065] Preferably, the step of transferring the plurality of light-emitting diodes onto the supply substrate in the first mounting step is performed by laser stripping.

[0066] This method allows for a more efficient first mounting step.

[0067] Furthermore, this invention provides a method for manufacturing a light-emitting diode (LED) display, characterized by having: The steps of manufacturing the aforementioned light-emitting diode supply substrate using the manufacturing method of the present invention; and The step of transferring the aforementioned plurality of light-emitting diodes on the aforementioned light-emitting diode supply substrate to the display panel substrate.

[0068] In the manufacturing method of the light-emitting diode (LED) display of the present invention, the LED supply substrate is manufactured using the manufacturing method of the LED supply substrate of the present invention, and a plurality of LEDs are transferred to the LED display substrate using the substrate. Therefore, it is possible to efficiently manufacture an LED display that does not contain defective LEDs. That is, according to the manufacturing method of the LED display of the present invention, an LED display can be manufactured with high yield.

[0069] Preferably, the process of transferring the plurality of light-emitting diodes from the aforementioned light-emitting diode supply substrate to the aforementioned display panel substrate is performed by laser stripping.

[0070] This method allows for the transfer of multiple light-emitting diodes at a higher speed, thus providing a more practical method for manufacturing light-emitting diode displays.

[0071] Furthermore, this invention provides a method for manufacturing a segmentation unit of a light-emitting diode (LED) display, characterized by having: The steps of manufacturing the aforementioned light-emitting diode supply substrate using the manufacturing method of the light-emitting diode supply substrate of the present invention; and The step of transferring the aforementioned plurality of light-emitting diodes on the aforementioned light-emitting diode supply substrate to the segmentation unit of the light-emitting diode display.

[0072] In the manufacturing method of the segmentation unit of the light-emitting diode display of the present invention, the light-emitting diode supply substrate is manufactured by the manufacturing method of the light-emitting diode supply substrate of the present invention, and a plurality of light-emitting diodes are transferred to the segmentation unit of the light-emitting diode display using the substrate. Therefore, the segmentation unit of the light-emitting diode display that does not contain defective light-emitting diodes can be manufactured efficiently and effectively. That is, according to the manufacturing method of the segmentation unit of the light-emitting diode display of the present invention, the segmentation unit of the light-emitting diode display can be manufactured with high yield.

[0073] Preferably, the process of transferring the plurality of light-emitting diodes on the aforementioned light-emitting diode supply substrate to the segmentation unit of the aforementioned light-emitting diode display is performed by laser stripping.

[0074] In this way, because multiple light-emitting diodes can be transferred at a higher speed, a more practical method for manufacturing segmented units of a light-emitting diode display can be provided.

[0075] Furthermore, the present invention provides a method for manufacturing a component supply substrate, which is a method for manufacturing a component supply substrate for transferring a plurality of components to a supply destination. The method for manufacturing the component supply substrate is characterized by comprising: The first mounting step involves mounting a plurality of components on a supply substrate; The selective removal step involves selectively removing defective components from the aforementioned supply substrate; and The second mounting step involves transferring the normal component to the location on the aforementioned supply substrate where the previously defective component was previously positioned.

[0076] This invention is not limited to a supply substrate for transferring light-emitting diodes, but can provide a component supply substrate for transferring components such as micro-electrical components or micro-semiconductor wafers. This component supply substrate can transfer a plurality of normal components to a supply destination. A method for manufacturing such a component supply substrate can be used, for example, in three-dimensional mounting and the manufacture of electrical and electronic machinery.

[0077] For example, the aforementioned components can be electrical components, semiconductor wafers, or MEMS components.

[0078] In this way, the manufacturing method of the component supply substrate of the present invention can be applied to the supply of various components.

[0079] Invention effects: As described above, the method for manufacturing a light-emitting diode supply substrate according to the present invention can manufacture a light-emitting diode supply substrate that can transfer a plurality of normal light-emitting diodes together or selectively to a supply destination.

[0080] Furthermore, since the light-emitting diode supply substrate manufactured by the manufacturing method of the present invention does not contain defective light-emitting diodes, the occurrence of light emission defects during the manufacture of light-emitting diode displays or the division units of light-emitting diode displays can be significantly reduced. Therefore, light-emitting diode displays can be manufactured with high yield and high efficiency.

[0081] Furthermore, since the manufacturing method of the light-emitting diode display and the manufacturing method of the segmentation unit of the light-emitting diode display of the present invention include the manufacturing method of the light-emitting diode supply substrate of the present invention, it is possible to efficiently manufacture a light-emitting diode display or a segmentation unit of a light-emitting diode display that does not contain defective light-emitting diodes.

[0082] Therefore, according to the manufacturing method of the component supply substrate of the present invention, it is possible to manufacture a component supply substrate that can transfer a plurality of normal components together or selectively to a supply destination. Simple Explanation of the Diagram

[0083] Figure 1 is an explanatory diagram showing a portion of a first embodiment of the manufacturing method of the light-emitting diode supply substrate of the present invention. Figure 2 is an explanatory diagram showing other parts of a first embodiment of the method for manufacturing a light-emitting diode supply substrate according to the present invention. Figure 3 is an explanatory diagram showing a portion of an example of a manufacturing method for a light-emitting diode display using a light-emitting diode supply substrate manufactured by the manufacturing methods shown in Figures 1 and 2. Figure 4 is an explanatory diagram showing a portion of a second embodiment of the manufacturing method of the light-emitting diode supply substrate of the present invention. Figure 5 is an explanatory diagram showing other parts of a second embodiment of the manufacturing method of the light-emitting diode supply substrate of the present invention. Figure 6 is an explanatory diagram showing a portion of a third embodiment of the method for manufacturing the light-emitting diode supply substrate of the present invention. Figure 7 is an explanatory diagram showing a portion of a fourth embodiment of the manufacturing method of the light-emitting diode supply substrate of the present invention. Figure 8 is an explanatory diagram showing a portion of a fifth embodiment of the method for manufacturing the light-emitting diode supply substrate of the present invention. Figure 9 is an explanatory diagram showing an example of a conventional method for manufacturing a light-emitting diode (LED) supply substrate and an example of a method for manufacturing an LED display. Implementation

[0084] As mentioned above, the following manufacturing methods are being developed: a method for manufacturing a light-emitting diode (LED) supply substrate capable of manufacturing an LED supply substrate that can transfer a plurality of normal LEDs together or selectively to a supply destination; a method for manufacturing a high-yield LED display; a method for manufacturing a segmented unit of a high-yield LED display; and a method for manufacturing a component supply substrate capable of manufacturing a component supply substrate that can transfer a plurality of normal components together or selectively to a supply destination.

[0085] The inventors of this case have repeatedly and carefully studied the above-mentioned problems and found that the manufacturing method of the light-emitting diode supply substrate described below can solve the above-mentioned problems, thus completing the present invention. The manufacturing method of the light-emitting diode supply substrate includes: a selective removal step, which is to selectively remove defective light-emitting diodes; and a second mounting step, which is to transfer normal light-emitting diodes to the position where defective light-emitting diodes were previously disposed.

[0086] That is, the present invention is a method for manufacturing a light-emitting diode (LED) supply substrate, which is a method for manufacturing an LED supply substrate for transferring a plurality of LEDs to a supply destination, characterized in that it comprises: The first mounting step involves mounting a plurality of light-emitting diodes on a supply substrate; The selective removal step involves selectively removing defective light-emitting diodes from the aforementioned supply substrate; and The second mounting step involves transferring a normal light-emitting diode to the position on the aforementioned supply substrate where the aforementioned defective light-emitting diode was previously disposed.

[0087] Furthermore, this invention provides a method for manufacturing a light-emitting diode (LED) display, characterized by having: The steps of manufacturing the aforementioned light-emitting diode supply substrate using the manufacturing method of the present invention; and The step of transferring the aforementioned plurality of light-emitting diodes on the aforementioned light-emitting diode supply substrate to the display panel substrate.

[0088] Furthermore, the present invention provides a method for manufacturing a segmentation unit of a light-emitting diode (LED) display, characterized by having: The steps of manufacturing the aforementioned light-emitting diode supply substrate using the manufacturing method of the light-emitting diode supply substrate of the present invention; and The step of transferring the aforementioned plurality of light-emitting diodes on the aforementioned light-emitting diode supply substrate to the segmentation unit of the light-emitting diode display.

[0089] Furthermore, the present invention is a method for manufacturing a component supply substrate, which is a method for manufacturing a component supply substrate for transferring a plurality of components to a supply destination, characterized in that it comprises: The first mounting step involves mounting a plurality of components on a supply substrate; The selective removal step involves selectively removing defective components from the aforementioned supply substrate; and The second mounting step involves transferring the normal component to the location on the aforementioned supply substrate where the previously defective component was previously positioned.

[0090] The present invention will now be described in detail, but it is not limited thereto.

[0091] Method for manufacturing a light-emitting diode supply substrate: This invention relates to a method for manufacturing a light-emitting diode (LED) supply substrate, used to transfer a plurality of LEDs to a supply destination, characterized in that it comprises: The first mounting step involves mounting a plurality of light-emitting diodes on a supply substrate; The selective removal step involves selectively removing defective light-emitting diodes from the aforementioned supply substrate; and The second mounting step involves transferring a normal light-emitting diode to the position on the aforementioned supply substrate where the aforementioned defective light-emitting diode was previously disposed.

[0092] In the manufacturing method of the light-emitting diode supply substrate of the present invention, in the selective removal step, defective light-emitting diodes are selected from a plurality of light-emitting diodes disposed on the supply substrate in the first mounting step and removed. Furthermore, in the second mounting step, normal light-emitting diodes are moved to the positions where the previously removed defective light-emitting diodes were disposed. According to this manufacturing method, a light-emitting diode supply substrate containing only normal light-emitting diodes can be manufactured. By using a light-emitting diode supply substrate manufactured in this manner, a plurality of normal light-emitting diodes can be transferred together or selectively to a supply destination by laser stripping or imprinting. That is, according to the manufacturing method of the light-emitting diode supply substrate of the present invention, a light-emitting diode supply substrate capable of transferring a plurality of normal light-emitting diodes together to a supply destination can be manufactured. Furthermore, light-emitting diodes at desired positions on the light-emitting diode supply substrate manufactured by the present invention can be selected, and normal light-emitting diodes can be transferred to a supply destination by laser stripping. In other words, it is possible to manufacture a light-emitting diode supply substrate that can transfer a normal light-emitting diode regardless of the location selected.

[0093] Furthermore, the light-emitting diode supply substrate manufactured by the manufacturing method of the present invention does not contain defective light-emitting diodes, thus significantly reducing the occurrence of light emission defects during the manufacture of light-emitting diode displays or their segmentation units. Therefore, light-emitting diode displays or their segmentation units can be manufactured with high yield and high efficiency.

[0094] Next, the steps will be explained in more detail.

[0095] First installation step: In the first mounting step, a plurality of light-emitting diodes are mounted on the supply substrate.

[0096] As the supply substrate here, for example, a substrate comprising a quartz substrate and an adhesive layer disposed on the quartz substrate can be used. Details regarding the supply substrate, the quartz substrate, and the adhesive layer will be described below.

[0097] As the aforementioned light-emitting diode, one of the group consisting of red light-emitting diodes, green light-emitting diodes, and blue light-emitting diodes can be used. In this way, it is possible to manufacture monochromatic supply substrates for red, green, and blue light-emitting diodes.

[0098] As a light-emitting diode, a light-emitting diode with a longest part of less than 300 μm can be used. In this way, the inertial mass of the light-emitting diode is reduced, and it can be transferred more efficiently through laser stripping. There is no particular limitation on the lower limit of the longest part of the light-emitting diode (LED), for example, LEDs with a longest part of 10 μm or more can be used.

[0099] In the first mounting step, it is preferable to attach a plurality of light-emitting diodes in a matrix manner to the surface of the adhesive layer of the supply substrate. In this way, the substrate for supplying light-emitting diodes can be manufactured efficiently.

[0100] In this case, a substrate with a matrix spacing that is a multiple of the pixel pitch of the display panel or an integer fraction of the pixel pitch can be used.

[0101] In this way, by performing only minimal movement and controlling the position of the moving laser irradiation without supplying unnecessary positional alignment to the substrate, multiple light-emitting diodes can be transferred together via laser stripping.

[0102] Preferably, the first mounting step includes: The step of preparing a starting substrate, wherein the starting substrate is a starting substrate on which the aforementioned plurality of light-emitting diodes are fabricated; The step of separating the plurality of light-emitting diodes on the aforementioned starting substrate element by element; and The step of transferring the aforementioned plurality of light-emitting diodes, which are separated element by element, onto the aforementioned supply substrate. In this way, the first mounting step can be carried out efficiently.

[0103] Here, as the starting substrate, a substrate such as a sapphire substrate and a plurality of light-emitting diodes manufactured on the sapphire substrate can be used.

[0104] Preferably, the step of transferring the aforementioned plurality of light-emitting diodes in the first mounting step is performed by laser stripping. This method allows for a more efficient first mounting step.

[0105] Selective removal steps: In the selective removal step, defective light-emitting diodes on the supply substrate are selectively removed.

[0106] Preferably, prior to the selective removal step, a determination step is included to determine whether each light-emitting diode on the supply substrate is functioning correctly. In this way, defective light-emitting diodes can be removed more reliably during the selective removal step.

[0107] In this determination step, information about the location of the faulty light-emitting diode can be mapped, for example.

[0108] Furthermore, it is preferable to perform the determination step using photoluminescence method. If the determination step is performed using photoluminescence, then the determination can be performed non-contactly.

[0109] Photoluminescence is a method of observing the light produced when excited electrons return to their ground state after being irradiated with light. The observed light information can be used to determine whether a material or a functional component's electronic components are functioning normally or abnormally. In the case of light-emitting diodes (LEDs), examples include the INSPECTRA PL series from TASMIT.

[0110] Furthermore, from the perspective of non-contact and fast determination speed, photoluminescence is superior. However, if there is a better method than photoluminescence for the object to be determined as normal / abnormal, other methods can be used. When the object is a substance other than a light-emitting diode or an electronic component such as a functional element, a method suitable for various determination objects can be used.

[0111] Selective removal is preferably performed via laser ablation. If a selective removal step is performed using laser stripping, it is easy to remove only the defective light-emitting diodes of the target, thus enabling more efficient fabrication of the light-emitting diode supply substrate.

[0112] In the case of selective removal via laser stripping, it is preferable to shape the laser light to approximately the same size as the defective light-emitting diode near the interface between the defective light-emitting diode and the adhesive layer of the supply substrate. In this way, defective light-emitting diodes can be selectively removed one by one by laser stripping.

[0113] Furthermore, by scanning the laser light to illuminate different positions of the light-emitting diode at each irradiation moment, it is possible to selectively laser strip away defective light-emitting diodes from the target.

[0114] The following describes the laser light that can be used in laser stripping methods with selective removal steps.

[0115] Second mounting step: In the second mounting step, a normal light-emitting diode is transferred to the position on the supply substrate where a defective light-emitting diode was previously configured.

[0116] Preferably, the second mounting step is performed in the following manner: Prepare a supplementary substrate, the supplementary substrate comprising: a quartz substrate, an adhesive layer disposed on the quartz substrate, and a plurality of light-emitting diodes adhered in a matrix to the surface of the aforementioned adhesive layer; The normal light-emitting diode on the aforementioned supplementary substrate is transferred to the position on the aforementioned supply substrate where the aforementioned defective light-emitting diode has been removed. In this way, the substrate for supplying light-emitting diodes can be manufactured more efficiently.

[0117] Alternatively, as a supplementary substrate, for example, a substrate similar to the starting substrate can be used, which includes: a sapphire substrate and a plurality of light-emitting diodes fabricated on the sapphire substrate.

[0118] Preferably, between the selective removal step and the second mounting step, a configuration step is further included, which involves configuring the supplementary substrate to face the supply substrate. In this way, the accuracy in the second loading step can be further improved.

[0119] In this case, it is preferable that, in the above configuration step, position alignment is performed so that the position of the previously misplaced light-emitting diode on the supply substrate faces the position of the normal light-emitting diode on the supplementary substrate. In this way, a normal light-emitting diode can be more accurately mounted in the position where the defective light-emitting diode has been removed.

[0120] Preferably, the second mounting step is performed by laser stripping. If the second mounting step is performed using laser stripping, only the normal light-emitting diodes of the target can be selected, and the diodes can be easily moved to the positions where defective light-emitting diodes were previously placed. Thus, the light-emitting diode supply substrate can be manufactured more efficiently.

[0121] In the case of performing the second mounting step by laser lift-off, it is preferable to shape the laser light into a size approximately the same as that of the transferred normal light-emitting diode near the interface between the adhesive layer between the transferred normal light-emitting diode and the supplementary substrate. In this way, normal light-emitting diodes can be selectively laser-stripped one by one, and the normal light-emitting diodes can be more accurately transferred to the positions where the faulty light-emitting diodes were previously located.

[0122] Furthermore, by scanning the laser light to illuminate different positions of the light-emitting diode at each irradiation moment, it is possible to selectively laser strip away the normal light-emitting diode of the target.

[0123] The laser light that can be used in the laser stripping process in the second mounting step will be described below.

[0124] In the manufacturing method of the light-emitting diode supply substrate of the present invention, the substrate obtained in the second mounting step can be used as the light-emitting diode supply substrate in its original form. Alternatively, a plurality of light-emitting diodes can be transferred from one or more substrates obtained in the second mounting step to another substrate, and the substrate obtained therefrom can be used as the light-emitting diode supply substrate. Specific examples will be described below.

[0125] Next, the supply substrate, optional supplementary substrate, laser light, and light-emitting diode that can be used in the manufacturing method of the light-emitting diode supply substrate of the present invention will be described in more detail.

[0126] Substrate supply: Regarding the shape of the supply substrate, it can be either circular or rectangular. Of course, the most suitable shape can be used depending on the purpose. In the case of simply using it as a normal light-emitting diode (LED) supply substrate, the most efficient method for providing the LED supply substrate is to inherit the pattern layout from the LED manufacturing process and use a circular supply substrate. On the other hand, if the LED supply substrate used in manufacturing the final display is of paramount importance, it is preferable that, while maintaining the desired display image (shape, aspect ratio), the shape of the supply substrate corresponds to a segmentation unit (so-called a tile) that divides both the vertical and horizontal dimensions into integer fractions. In this way, it is preferable to provide a supply substrate with a shape suitable for the final manufactured electronic device or other product.

[0127] Next, the quartz substrate and adhesive layer that can be used in the supply substrate and optional supplementary substrate will be described in more detail.

[0128] Quartz substrate: If a substrate comprising a quartz substrate as a supply substrate and an optional supplementary substrate is used, high transmittance of short-wavelength UV laser light that induces laser ablation can be provided. Preferably, the quartz substrate is a synthetic quartz substrate.

[0129] In the case of synthetic quartz glass, since an in-plane film thickness uniformity (TTV: total thickness difference) of less than 1 μm can be achieved, the gap between the opposing substrates for laser lift-off can be controlled by using synthetic quartz glass.

[0130] Furthermore, the advantage of using synthetic quartz glass is its thermal stability. Specifically, the coefficient of thermal expansion of synthetic quartz glass substrates is approximately 1 / 5 that of other quartz glass substrates, reducing thermal distortion during operation. This is particularly beneficial in the case of imprinted parts with protrusions, as it reduces displacement and distortion at the protrusion locations caused by thermal expansion and contraction, thus enabling accurate laser stripping and transfer operations.

[0131] Furthermore, facets can be provided at one or more vertices on the front or back side of the quartz substrate, or marks indicating the orientation of the quartz substrate can be provided on any of the front, back, and side surfaces of the peripheral portion of the quartz substrate. In this way, when the supply substrate is placed in a transfer device using laser stripping, the rotation position can be set without error.

[0132] Furthermore, individual supply substrates can be managed by engraving letters, symbols, or two-dimensional barcodes onto the quartz substrate. These letters, symbols, or two-dimensional barcodes can also be used as directional markers. The aforementioned facets can be used as directional markers.

[0133] Adhesive layer: Preferably, a silicone-based pressure-sensitive adhesive, which does not cause exfoliation at the interface, is used in the adhesive layer. As a silicone-based pressure-sensitive adhesive, compositions formed from the following materials can be used: PDMS (polydimethylsiloxane), silicone compositions with modified side chains and ends of PDMS, and combinations of the above materials. By adjusting the individual material compositions (molecular weight, modifiers, modifiers, modifier mass, etc.) and mixing ratios (in the case of mixtures), physical properties such as material hardness, pressure adhesion, and repeatability can be controlled. In addition to mixing, optimization can be achieved by cross-linking various modified silicone compositions or by three-dimensionally structuring the molecules. If a silicone-based pressure-sensitive adhesive is used in accordance with the steps of this invention, unlike organic materials (such as polyimide or acrylic pressure-sensitive adhesives, whose main backbone is an organic framework) used as the adhesive layer, the organic adhesive layer will not remain attached to the light-emitting diode when the light-emitting diode is peeled off by laser ablation. Therefore, it is possible to repeatedly mount the light-emitting diode at the same location, which is not possible when using conventional organic compositions as adhesive layers.

[0134] Furthermore, the adhesive principle of silicone-based pressure-sensitive adhesives lies in the generation of adhesive force through the inherent adhesiveness of the material and the pushing force (as an external force applied by pressure). Since the adhesive force is sufficiently generated with a pushing displacement of a few micrometers to about 5 μm, it can be approximately 5 to 10 μm. Of course, even a thickness greater is acceptable.

[0135] Laser light: Next, the laser light that can be used in laser stripping will be explained in more detail.

[0136] In cases where laser stripping is used in the selective removal step, the second mounting step, or both of the above, it is preferable to use an excimer laser.

[0137] In this way, time-compressed pulsed laser light can be generated. By controlling the power supply parameters of the device, such as the pulse transmission voltage, the pulse width or light intensity can be easily controlled, enabling the generation of high-intensity laser light with a single pulse, which is not possible with other continuous wave oscillation (CW) lasers.

[0138] In cases where laser stripping is used in the selective removal step, the second mounting step, or both, the laser can be set to a pulsed laser, and stripping can be performed by irradiating with a single pulse of laser light. The reasons for this are explained below.

[0139] When using CW lasers in laser stripping, the energy per wavelength is low, making it impossible to strip the light-emitting diode (LED) via laser ablation unless laser irradiation is prolonged. Even if stripping is possible using CW lasers, the laser energy at the moment of stripping is very small, making it difficult for the LED to fly from the supply substrate side to the receiving substrate side. In contrast, pulsed lasers can extract time-compressed high-energy pulsed laser light, allowing laser ablation to be initiated instantaneously in a single pulse. Therefore, the force that propels the LED from the supply substrate to the receiving substrate is not only large but also instantaneous, making it suitable for transferring LEDs via laser stripping.

[0140] In particular, it is preferable to use excimer lasers in pulsed lasers. Among the types of excimers, XeCl (308nm), KrF (248nm), and ArF (193nm) are practically preferred. For example, taking XeCl excimer lasers as an example, there is the LAMBDA SX system sold by COHERENT, which outputs a maximum pulse energy of 1000 mJ and has maximum pulse repetition frequencies of 500 Hz (500 W) and 600 Hz (600 W).

[0141] As an example of KrF and ArF excimer lasers, there is the IndyStar series sold by COHERENT. In the case of KrF, it has a maximum output of 12 W and can oscillate at a maximum pulse repetition frequency of 1 kHz with a maximum pulse energy of 12 mJ. Furthermore, it can oscillate at a maximum pulse repetition frequency of 2 kHz with a maximum pulse energy of 6 mJ.

[0142] In the case of ArF, it has a maximum output of 8 W and can oscillate at a maximum pulse repetition frequency of 1 kHz with a maximum pulse energy of 8 mJ. Furthermore, it can oscillate at a maximum pulse repetition frequency of 2 kHz with a maximum pulse energy of 4 mJ.

[0143] When the pulse repetition frequency is 1 kHz, the pulse time interval is 1 millisecond. In reality, because the time for the configuration step is included, the speed of the LED supply substrate manufacturing method of the present invention is determined by the platform movement time, but compared to the imprinting method, it can achieve extremely high-speed transfer. Furthermore, in the selective removal step and the second mounting step of the LED supply substrate manufacturing method of the present invention, the LEDs disposed on the entire surface of the substrate are not transferred together; instead, the main purpose is to remove defective LEDs and mount normal LEDs in their respective positions. Therefore, this is a very useful method for manufacturing a supply substrate that does not contain defective LEDs.

[0144] Furthermore, although excimer laser light itself has high energy, it is light that is compressed in a very short time (the time width of a pulse is 24 nanoseconds (FWHM) in the case of XeCl, and 7 nanoseconds (FWHM) in the case of KrF and ArF), so it has the advantage of not leaving damage in the laser irradiation area.

[0145] Furthermore, if there is a laser other than an excimer laser that has sufficient performance to realize the present invention, such laser can be used.

[0146] In this way, the laser used in the selective removal step, the second mounting step, or both of the above does not have to be limited to an excimer laser, but can be a laser capable of generating pulsed laser light of the required intensity.

[0147] In the case where the transfer of multiple light-emitting diodes in the first mounting step is performed by laser stripping, the laser used is not particularly limited and can be a CW laser.

[0148] Light-emitting diode: Next, the light-emitting diode used in the manufacturing method of the light-emitting diode supply substrate of the present invention will be described in more detail.

[0149] Generally speaking, in the context of light-emitting diodes (LEDs), LEDs with a short side of 100 μm to 300 μm are called miniature LEDs, while those with a short side of less than 100 μm, and even less than 50 μm, are called micro LEDs. Recently, some companies, prioritizing commercial advantages, have also referred to 150 μm × 150 μm LEDs as micro LEDs. Although it is difficult to accurately define these scales, the LEDs used for transfer in this invention can be referred to as the aforementioned miniature or micro LEDs.

[0150] For example, in the case of miniature light-emitting diodes (LEDs) with dimensions of 100 μm x 200 μm, the height is less than 100 μm. However, recently, thin-film blue and green miniature LEDs with dimensions of 150 μm x 150 μm x less than 10 μm in height have also emerged. Correspondingly, in the case of red miniature LEDs, there are also cases where the height is less than twice that of the original LED. In the case of cutting miniature LEDs with a planar size of 100 μm x 100 μm, further thinning is being carried out, resulting in a size of less than 10 micrometers including the electrodes, and approximately 7 micrometers internally. Regarding the planar size of the LED, it is now possible to fabricate LEDs with a length of 25 μm x a width of 25 μm x a height of 7 μm.

[0151] When transferring the aforementioned miniature and micro-sized light-emitting diodes (LEDs) using laser stripping, the distance between the LED supply substrate and the receiving substrate can be adjusted to a flight distance of approximately four times or less the length of one side of the planar dimension. Preferably, it can be adjusted to approximately three times or less the length of one side of the planar dimension, and more preferably, to twice or less the length of one side of the planar dimension. With a flight distance of approximately four times the length of one side of the planar dimension, the LED can be transferred using laser stripping by adjusting the laser light intensity, its in-plane uniformity, and the laser irradiation size. Furthermore, the laser irradiation size can be a spot size that is approximately the same as or slightly larger than the size of the LED being transferred.

[0152] Of course, it can also be approximately the same length as one side of the planar dimension, or less than the length of one side of the planar dimension. Although this is difficult to achieve with ordinary quartz substrates, by using a synthetic quartz substrate with an in-plane film thickness uniformity of less than 1 μm (calculated as TTV) as the substrate for the supply substrate, the gap between the supply substrate and the receiving substrate can be made to be tens of micrometers. The limit distance of this gap depends on the potential capability of the device that processes the supply substrate and the receiving substrate.

[0153] In a light-emitting diode supply substrate, a plurality of light-emitting diodes can be configured such that one or more of the red, green and blue light-emitting diodes form a group of pixels.

[0154] For example, in the second mounting step, a supply substrate for a red light-emitting diode, a supply substrate for a green light-emitting diode, and a supply substrate for a blue light-emitting diode are respectively fabricated. Using these supply substrates, the red light-emitting diode, the green light-emitting diode, and the blue light-emitting diode are transferred onto a further supply substrate, so that one or more of the aforementioned light-emitting diodes of each color become a group of pixels.

[0155] In this way, during the manufacturing of light-emitting diode displays, the transfer can be performed either simultaneously or on a per-pixel basis.

[0156] Next, with reference to the drawings, some embodiments of the manufacturing method of the light-emitting diode supply substrate of the present invention will be specifically described.

[0157] (First Implementation Form) Figures 1 and 2 are diagrams illustrating a first embodiment of the manufacturing method of the light-emitting diode supply substrate of the present invention.

[0158] In Figure 1, 1 is a first sapphire substrate serving as the starting substrate, and 2 is a light-emitting diode (LED) that is monolithically formed on the starting substrate (first sapphire substrate) 1. 3 represents the electrode disposed on the LED 2. 4 is a first supply substrate, which includes a substrate 41 formed from a quartz substrate and an adhesive layer 42 formed on one side of its surface. 6 is a laser beam. 7 is a container for collecting defective LEDs 2'. 8 is a second sapphire substrate serving as a supplementary substrate. The supplementary substrate (second sapphire substrate) 8 is similar to the starting substrate 1 in Figure 1(a), and includes a monolithically formed LED 9 with an electrode 3. In Figure 2, 5 is a second supply substrate, which includes a substrate 51 formed from a quartz substrate and an adhesive layer 52 formed on one side of its surface.

[0159] Using Figures 1(a) to 1(e) and Figures 2(f) and 2(g), a method for manufacturing a light-emitting diode supply substrate according to a first embodiment of the present invention will be described.

[0160] (First mounting step) First, using Figure 1(a), an example of the first mounting step of mounting a plurality of light-emitting diodes on a supply substrate will be described.

[0161] As shown in Figure 1(a), the surface of the first supply substrate 4 with the adhesive layer 42 and the surface of the starting substrate 1 with the light-emitting diode 2 are arranged parallel to each other and facing each other, adjusted to a certain distance between them. In this state, laser light 6 is incident from the back side of the starting substrate 1 (the side without the light-emitting diode 2) and focused on the vicinity of the interface between the desired light-emitting diode 2 and the starting substrate 1. When the light-emitting diode 2 is a blue or green light-emitting diode, a GaN layer of the light-emitting diode 2 exists at the interface between the starting substrate 1 and the light-emitting diode 2 fabricated on the starting substrate 1. When the laser light 6 reaches this layer, a portion of the GaN layer evaporates due to laser ablation, and the light-emitting diode 2 separates from the starting substrate 1. This method is a form of laser stripping. The light-emitting diode 2 separated in this way flies towards the adhesive layer 42 of the facing first supply substrate 4 and adheres to and is fixed to the adhesive layer 42. As shown in Figure 1(a), while the laser light 6 is moved on the back side of the starting substrate 1, all the light-emitting diodes 2 are transferred from the starting substrate 1 to the surface of the adhesive layer 42 of the first supply substrate 4. The state of transferring all the desired light-emitting diodes 2 in this way is shown in Figure 1(b).

[0162] In Figure 1(a), when laser stripping is performed using a CW laser in the step of transferring multiple light-emitting diodes together in the first mounting step, the electrode portion 3 of the light-emitting diode 2 can be pressed against the adhesive layer 42 (not shown in the figure). In this way, even when using a CW laser, the light-emitting diodes can be transferred together through laser stripping.

[0163] (Selective removal steps) Next, using Figure 1(c), an example of the steps for selectively removing defective light-emitting diodes will be explained.

[0164] First, defective light-emitting diodes 2' that should be removed are selected from the light-emitting diodes 2 on the first supply substrate 4. This selection can be made, for example, based on the results of the determination steps described above.

[0165] Next, laser light 6 is irradiated from the back side (the side without the light-emitting diode 2) of the first supply substrate 4, applying the laser light 6 to the defective light-emitting diode 2 attached to the adhesive layer 42 on the surface of the first supply substrate 4, selectively removing the defective light-emitting diode 2' by laser stripping. More specifically, in this case, by focusing the laser light 6 onto the electrode 3 of the defective light-emitting diode 2' and the area near the defective light-emitting diode 2' that is in contact with at least a portion of the adhesive layer 42, a difference in the thermal expansion rate between the defective light-emitting diode 2' and the electrode 3 and the adhesive layer 42 is generated, creating shear stress at those interfaces. Thus, the defective light-emitting diode 2' and the electrode 3 formed thereon are instantly peeled off and removed. The peeled-off light-emitting diode 2' is captured by a container 7 for collecting defective light-emitting diodes. This is also one form of laser stripping. In this way, by moving the irradiation position of the laser light 6 to the defective light-emitting diode 2' that is selectively removed, the aforementioned stripping and removal action is selectively performed, thereby completely removing the defective light-emitting diode 2' on the first supply substrate 4.

[0166] Furthermore, the position 10 of the defective light-emitting diode 2' can be determined in advance on the starting substrate 1 in the previously described determination step, for example, to be normal / defective, and its position information can be mapped and recorded.

[0167] (Second mounting step) Next, using Figure 1(d), an example of a second mounting step is described for transferring a normal light-emitting diode to the position on the supply substrate where a defective light-emitting diode was previously disposed.

[0168] As shown in Figure 1(d), the surface of the first supply substrate 4 (adhesive layer 42) faces upward (opposite to gravity), and the surface of the supplementary substrate (second sapphire substrate) 8 faces downward above it, so that they are arranged parallel to each other at a certain distance. While simultaneously correcting the rotation of the X-Y axes of the surface of the first supply substrate 4 and the X-Y axes of the surface of the supplementary substrate 8, alignment control is performed to arrange them so that the position of the normal light-emitting diode 9 on the supplementary substrate 8 to be supplemented coincides with the position of the previously poorly positioned light-emitting diode 2' on the first supply substrate 4 (the position of the normal light-emitting diode 9 to be supplemented) 10. Furthermore, in the Z-axis direction, the arrangement is adjusted so that the distance between the surface of the supplementary substrate 8 and the surface of the first supply substrate 4 is the optimal distance. That is, the manufacturing method of the light-emitting diode supply substrate in the first embodiment further includes a configuration step between the selective removal step and the second mounting step, which involves configuring the supplementary substrate 8 to face the first supply substrate 4. In this configuration step, position alignment is performed, aligning the position 10 of the previously misplaced light-emitting diode 2' on the first supply substrate 1 with the position of the normal light-emitting diode 9 on the supplementary substrate 8.

[0169] Specifically, although not shown in the figure, it can be achieved through a three-dimensional position alignment system in which at least one or both of the platform holding the supplementary substrate 8 and the platform holding the first supply substrate 4 have X-Y movement mechanisms, at least one of the platforms has a mechanism for correcting rotation, and at least one of the platforms has a Z-direction movement mechanism.

[0170] Next, after the above configuration steps are completed, laser light 6 is irradiated from the back of the supplementary substrate 8 toward the normal light-emitting diode 9, and transferred to the deficient portion of the light-emitting diode on the first supply substrate 4 (the position where the defective light-emitting diode 2' was previously configured) 10 by laser stripping. This is also a form of laser stripping (second mounting step).

[0171] By repeating the above configuration steps and the second mounting steps, a first light-emitting diode supply substrate 100, which does not contain defective light-emitting diodes 2', as shown in FIG1(e), can be manufactured.

[0172] Furthermore, the position of the normal light-emitting diode 9 can be determined in advance on the supplementary substrate 8 to determine whether it is normal or defective, and its position information can be mapped and recorded.

[0173] (Reverse steps) In the state shown in Figure 1(e), because the electrode 3 side of the light-emitting diode 2 on the first light-emitting diode supply substrate 100 faces the adhesive layer 5, it cannot be used for transfer to the light-emitting diode display panel in this way. Therefore, all the light-emitting diodes 2 must be further inverted inside and out. The inversion steps performed here are described below.

[0174] First, a second supply substrate 5 as shown in FIG. 2(f) is prepared. Next, as shown in FIG. 2(f), on the surface of the second supply substrate 5 where the adhesive layer 52 is provided, the side (surface) on which the light-emitting diode 2 of the first supply substrate 4 is mounted is arranged downwards, such that the surfaces are parallel to each other at a certain distance. In this state, a laser stripping method is performed, causing laser etching, which inverts and transfers all the light-emitting diodes 2 on the first supply substrate 4 to the second supply substrate 5. Thus, as shown in FIG. 2(g), a second light-emitting diode supply substrate 200 can be manufactured.

[0175] In this manner, according to the first embodiment of the present invention, it is possible to manufacture a first light-emitting diode supply substrate 100 and a second light-emitting diode supply substrate 200 that do not contain defective light-emitting diodes 2'.

[0176] Next, referring to FIG3, an example of a method for manufacturing a light-emitting diode display using a second light-emitting diode supply substrate manufactured in the manner described above will be briefly explained.

[0177] In the example shown in FIG3, as shown in FIG3(h), the light-emitting diode supply substrate 200 and the display panel substrate 39, which is the supply destination, are arranged facing each other, such that the position of the light-emitting diode 2 of the light-emitting diode supply substrate 200 is aligned with the position of the electrode of the display panel substrate 39.

[0178] In this state, as shown in FIG3(h), in the same order as described with reference to FIG9(IV), a plurality of light-emitting diodes 2 are transferred from the second light-emitting diode supply substrate 200 to the display panel substrate 39 by laser stripping. By making additional electrical connections, a light-emitting diode display (or a light-emitting diode display panel as a division unit) 300 as shown in FIG3(i) is obtained, which includes the display panel substrate 39 and a plurality of light-emitting diodes 2 disposed on the substrate.

[0179] Furthermore, although not shown in the figure, even using the imprinting method, it is possible to transfer and arrange multiple light-emitting diodes 2 from the second light-emitting diode supply substrate 200 to the display panel substrate 39.

[0180] Based on the manufacturing method example described above, an assembly process free of defective light-emitting diodes (LEDs) has been achieved. This process is performed on each of the RGB colors, enabling the manufacture of an RGB color LED display (LED display panel).

[0181] In this way, by using a light-emitting diode supply substrate (which can be manufactured in the first embodiment of the manufacturing method of the light-emitting diode supply substrate according to the present invention), a light-emitting diode display with very few light-emitting defects can be manufactured.

[0182] If the step of transferring the light-emitting diode 2 from the second light-emitting diode supply substrate 200 to the display panel substrate 39 is performed by laser ablation using a laser stripping method, a non-contact, high-speed transfer can be achieved, enabling the manufacture of a practically efficient light-emitting diode display 300. In this way, the light-emitting diode supply substrate 200 manufactured by the method of the present invention is highly advantageous for realizing inorganic light-emitting diode displays, so-called mini light-emitting diode displays, and micro light-emitting diode displays.

[0183] Furthermore, during the manufacturing of the second light-emitting diode supply substrate 200, as pixels required by the display, red, green, and blue light-emitting diodes can be arranged in a manner where at least one light-emitting diode of each color is present, forming an RGB light-emitting diode group for each pixel. To this end, the following steps can be performed: using the first supply substrate 100 for each RGB color light-emitting diode 2, controlling the transfer position of each color to the second supply substrate 5, configuring the RGB light-emitting diodes with display spacing, and also configuring the RGB light-emitting diodes to conform to the electrode positions on the display panel substrate 39 side. In this way, if the second light-emitting diode supply substrate 200 is manufactured to have a pixel structure and pixel spacing conforming to the desired display panel substrate 39, the RGB display 300 can be assembled simply by transferring a plurality of light-emitting diodes from the second light-emitting diode supply substrate 200 to the display panel substrate 39.

[0184] In addition, the light-emitting diode 2 can be configured such that the spacing of the configuration matrix (X-Y) of each RGB color is a multiple of the pixel spacing of the display panel or an integer N-fold of the aforementioned pixel spacing P.

[0185] Therefore, in the step of transferring the light-emitting diode from the first supply substrate 4 to the second supply substrate 5 or from the starting substrate 1 to the first supply substrate 4 (the first mounting step), the light-emitting diode 2 can be moved to the desired pixel pitch P or P / N pitch position. Furthermore, when the light-emitting diode 2 is transferred and disposed on the first supply substrate 4 and / or the second supply substrate 5, it is configured with a pitch (P / N) that is a multiple of an integer N of the desired pixel pitch P, and with each light-emitting diode 2 not overlapping, thereby enabling the manufacture of a second light-emitting diode supply substrate 200 with the maximum mounting capacity corresponding to the desired pixel pitch.

[0186] If a second light-emitting diode supply substrate 200 is used to mount the light-emitting diode 2 at P / N (N: integer) pitch positions in this manner, the transfer speed can be significantly improved when mounting the light-emitting diode 2 onto the display panel substrate 39. That is, when the light-emitting diode is transferred from the second light-emitting diode supply substrate 200 to the display panel substrate 39 by laser stripping, the laser irradiation position is moved optically, and the light-emitting diode 2 at the desired pixel pitch position on the X-Y matrix is ​​selectively transferred. This allows multiple light-emitting diodes 2 to be transferred at once (together) in a configuration step that includes one platform movement.

[0187] Next, the chip position next to the position of the light-emitting diode 2 transferred by laser stripping is moved to the next transfer position (the pixel pitch position of the display panel), and the transfer is performed by the aforementioned selective laser stripping method. By repeating this series of actions, a light-emitting diode display panel with light-emitting diodes 2 at the pixel pitch position can be manufactured at approximately N times the speed. By sequentially performing the aforementioned series of actions on each of the light-emitting diodes of each color, an RGB light-emitting diode display 300 or a segmentation unit of a display (e.g., a light-emitting diode display panel) 300 can be manufactured.

[0188] In the above manner, if the light-emitting diode supply substrate is prepared during the manufacturing stage of the light-emitting diode supply substrate and the light-emitting diode is positioned in a position suitable for mounting and assembling the light-emitting diode to the display, then the manufacturing efficiency can be further improved in the step of manufacturing and assembling the display or the segmentation unit of the display.

[0189] Furthermore, in the case where the light-emitting diode 2 is transferred from the starting substrate 1 in FIG. 1(a) to the first supply substrate 4 via laser stripping, and in the case where the light-emitting diode 2 is transferred from the first supply substrate 4 in FIG. 2(f) to the second supply substrate 5, from a practical time perspective, the operation without platform movement is preferable compared to the platform movement associated with the removal step of defective light-emitting diode 2' (FIG. 1(c)) and the second mounting step of normal light-emitting diode 9 (FIG. 1(d)). In this case, if the transfer is performed using scanning laser light 6, the transfer can be performed simultaneously within the practical time. At this time, the high repetition rate of the excimer laser will be effective. Moreover, since high-output laser light can be obtained, the laser beam spot size can be expanded to cover the area of ​​multiple light-emitting diodes 2, and multiple light-emitting diodes 2 can be transferred together instead of transferring individual light-emitting diodes 2 with divided irradiation areas one by one. The spot shape can be square or rectangular. The laser light irradiation is synchronized to a pulse oscillation frequency or an integer multiple thereof, and unnecessary pulse oscillation light is blocked by an optical gate, thereby enabling efficient and good transfer of the light-emitting diode.

[0190] (Second Implementation Form) Figures 4 and 5 illustrate a method for manufacturing a light-emitting diode supply substrate according to a second embodiment of the present invention.

[0191] In the first embodiment described above, as shown in Figures 1(c) and 1(d), the step of selectively removing defective light-emitting diodes 2' from the first supply substrate 4 is performed until the second mounting step of transferring normal light-emitting diodes 9. On the other hand, in the second embodiment shown in Figures 4 and 5, as shown in Figures 5(e2) and 5(f2), the step of selectively removing defective light-emitting diodes 2' from the second supply substrate 5 is performed until the second mounting step of transferring normal light-emitting diodes 9. Furthermore, the difference lies in that the substrate for supplying normal light-emitting diodes 9 is a third supply substrate 11 used as a supplementary substrate. For example, the third supply substrate 11 can be a substrate manufactured in the same manner as the first supply substrate 4 obtained in Figure 4(b2). Of course, the result of determining the normal / abnormal status of light-emitting diodes 2 and 9 in advance on the starting substrate 1, along with their position information, is received at the time point when light-emitting diodes 2 and 9 are transferred together from the starting substrate 1 to the first supply substrate 4 and the third supply substrate 11.

[0192] Furthermore, if the first light-emitting diode supply substrate 100 in the state shown in FIG. 1(e) of the first embodiment (that is, the state in which defective light-emitting diodes 2' are removed and all are equipped with normal light-emitting diodes 2) is used as the third supply substrate 11 shown in FIG. 5(f2) of the second embodiment of the present invention, then all light-emitting diodes 2 of the first light-emitting diode supply substrate 100 can be used without distinction. Thus, it is possible to improve the efficiency of the arrangement step and the second mounting step on the second supply substrate 5 shown in FIG. 5(f2).

[0193] (Third Implementation Form) Figure 6 shows a portion of an explanatory diagram of a method for manufacturing a light-emitting diode supply substrate according to a third embodiment of the present invention, and it extracts features that differ from those of the second embodiment of the present invention.

[0194] Figure 6(f') is characterized in that a supplementary substrate (second sapphire substrate) 8 is used instead of the third supply substrate 11 in the step of Figure 5(f2) of the second embodiment of the present invention. The supplementary substrate 8 shown is the same as that shown in Figure 1(d) of the first embodiment of the present invention.

[0195] The second light-emitting diode supply substrate 200 shown in Figure 6(g') obtained through the steps in Figure 6(f') is the same as that shown in Figure 2(g) and Figure 5(g2).

[0196] (Fourth Implementation Form) In the first to third embodiments described above, the step of transferring a plurality of light-emitting diodes 2 together from the starting substrate 1 on which the light-emitting diodes 2 are manufactured to the first supply substrate 4 as the first mounting step is shown in Figures 1(a) and 4(a2). This can be achieved when the light-emitting diodes 2 are blue or green light-emitting diodes because the interface between the starting substrate (sapphire substrate) 8 and the light-emitting diodes 2 is a GaN layer. More specifically, the GaN layer through the interface is etched and N sublimates, and the light-emitting diodes 2 are peeled off from the starting substrate 8 and ejected. Furthermore, blue and green light-emitting diodes are possible because there is a lateral structure with electrodes formed on the same side.

[0197] However, in the case of red LEDs, the mainstream approach is to form the base substrate on a GaAs substrate, typically with the electrodes sandwiching the LED in a vertical structure. If this is directly mounted on a display panel, the electrode connections become more complex due to the difference in structure compared to the horizontal structures of blue and green LEDs. To overcome this challenge, horizontally structured red LEDs have been manufactured and are now widely available in recent years.

[0198] Figure 7 is a partial illustration of a method for manufacturing a light-emitting diode supply substrate according to a fourth embodiment of the present invention.

[0199] In Figure 7, 21 is the starting substrate (sapphire substrate), and 22 is a red light-emitting diode (LED). 23 and 24 are electrodes disposed on the LED, and electrodes 23 and 24 are respectively connected to the conductive layer on the opposite side of the red LED 22. In this way, the electrodes of the red LED 22 are configured in a lateral structure. The red LED 22 is fixed to the starting substrate 21 through an adhesive layer 25. The adhesive layer 25 is generally made of a resin such as BCB (benzocyclobutene). Furthermore, 4 is a first supply substrate, including a substrate 41 and an adhesive layer 42 formed on the substrate 41.

[0200] In the fourth embodiment, as shown in FIG7(a 4), the starting substrate 21 and the first supply substrate 4 are arranged parallel to each other and adjusted to be a certain distance in-plane. In this state, a portion of the adhesive layer 25 is etched off by laser stripping, and the red light-emitting diode 22 fixed to the starting substrate 21 by the adhesive layer 25 is transferred to the first supply substrate 4.

[0201] In this case, since BCB residue from the adhesive layer 25 remains on the red light-emitting diode 22, a step is required to remove the BCB residue through chemical etching (although not shown in the figure). This chemical etching can be performed through a wet process or a dry process.

[0202] In this manner, the first supply substrate 4 (Fig. 7(b 2)) is completed. Then, for example, a second supply substrate 5 that does not contain defective light-emitting diodes can be manufactured using the method shown in the first or second embodiment of the present invention.

[0203] Furthermore, the normal / defect determination of the red light-emitting diode 22 can be carried out using a photoluminescence method while the red light-emitting diode 22 is fixed to the starting substrate 1.

[0204] As described above, it is possible to manufacture a light-emitting diode supply substrate for manufacturing light-emitting diode displays for blue, green and red light-emitting diodes.

[0205] (Fifth Implementation Form) In the first to fourth embodiments, during the first mounting step, laser light 6 is scanned with a certain gap between the starting substrate 1 and the first supply substrate 4 using a laser peeling method, thereby mounting the light-emitting diodes 2 or 22 of various colors onto the first supply substrate 4. Furthermore, even during the transfer from the first supply substrate 4 to the second supply substrate 5, a certain gap is maintained between the two substrates. The advantage of this is that the adhesive layers on the first supply substrate 4 and the second supply substrate 5 can use the same adhesive material.

[0206] However, it can transfer the image without setting a gap.

[0207] Figure 8 is a partial illustration of a method for manufacturing a light-emitting diode supply substrate according to a fifth embodiment of the present invention. Figure 8(a 5-1) corresponds to Figure 1(a), Figure 8(a 5-2) corresponds to Figure 7(a 4), and Figure 8(f 5) corresponds to Figure 2(f).

[0208] As shown in Figures 8(a 5-1), 8(a 5-2), and 8(f 5), in the case of transferring the light-emitting diode 2 or 22 by laser stripping without setting a gap, in any case, slight pressing can be applied to achieve the adhesion effect of the adhesive layers 42 and 52.

[0209] In the cases shown in Figures 8(a 5-1) and 8(a 5-2), the light-emitting diodes 2 and 22 are peeled off from the starting substrate (sapphire substrate) 1 and the adhesive layer 25, respectively, so the pressing works effectively as described above.

[0210] In the case of Figure 8 (f 5), by using a material in which the adhesive force (including adhesion force) of the adhesive layer 52 is greater than that of the adhesive layer 42, the transfer can be achieved by laser stripping.

[0211] Furthermore, other steps in the fifth embodiment may be the same as those in the first or second embodiment.

[0212] The second light-emitting diode supply substrate 200 manufactured using the manufacturing method of the light-emitting diode supply substrate according to the second to fourth embodiments is similar to the second light-emitting diode supply substrate 200 manufactured using the manufacturing method of the light-emitting diode supply substrate according to the first embodiment. For example, in the order shown in FIG3, a light-emitting diode display (or a segmented unit of a light-emitting diode display or a light-emitting diode display panel) 300 can be manufactured.

[0213] Manufacturing method of light-emitting diode (LED) display and manufacturing method of LED display segmentation unit: The method for manufacturing a light-emitting diode display of the present invention is characterized by having: The steps of manufacturing the aforementioned light-emitting diode supply substrate using the manufacturing method of the present invention; and The step of transferring the aforementioned plurality of light-emitting diodes on the aforementioned light-emitting diode supply substrate to the display panel substrate.

[0214] Furthermore, the manufacturing method of the segmented unit of the light-emitting diode display of the present invention is characterized by having: The steps of manufacturing a light-emitting diode (LED) supply substrate using the manufacturing method of the present invention; and The step of transferring the aforementioned plurality of light-emitting diodes on the aforementioned light-emitting diode supply substrate to the segmentation unit of the light-emitting diode display.

[0215] In the manufacturing method of the light-emitting diode (LED) display and the manufacturing method of the LED display's segmentation unit according to the present invention, the LED supply substrate is manufactured using the manufacturing method of the LED supply substrate of the present invention. Using the LED supply substrate, a plurality of LEDs are transferred to the LED display substrate or the LED display's segmentation unit. Therefore, it is possible to efficiently manufacture an LED display or an LED display's segmentation unit that does not contain defective LEDs. That is, according to the LED display manufacturing method of the present invention, LED displays can be manufactured with high yield. Furthermore, according to the LED display segmentation unit manufacturing method of the present invention, LED display segmentation units can be manufactured with high yield.

[0216] Preferably, the process of transferring the plurality of light-emitting diodes from the aforementioned light-emitting diode supply substrate to the aforementioned display panel substrate is performed by laser stripping. This method allows for the transfer of multiple light-emitting diodes at a higher speed, thus providing a more practical method for manufacturing light-emitting diode displays.

[0217] Similarly, it is preferable to use a laser stripping method to transfer the plurality of light-emitting diodes on the aforementioned light-emitting diode supply substrate to the segmentation unit of the aforementioned light-emitting diode display. In this way, multiple light-emitting diodes can be transferred at a higher speed, thus providing a more practical method for manufacturing segmented units of light-emitting diode displays.

[0218] Specific examples of the manufacturing method of the light-emitting diode display of the present invention and the manufacturing method of the segmentation unit of the light-emitting diode display of the present invention are illustrated with reference to Figures 1 to 3.

[0219] Furthermore, the manufacturing method of the light-emitting diode display and the manufacturing method of the segmentation unit of the light-emitting diode display according to the present invention can, for example, manufacture high-resolution large-screen displays and their segmentation units. However, by using a light-emitting diode supply substrate manufactured using the manufacturing method of the light-emitting diode supply substrate of the present invention, display function units such as watch-sized healthcare devices, composite components, in-vehicle head-up displays or navigation system displays, AR / VR / MR visual augmentation devices, and glasses-type display devices can be provided. Thus, electrical / electronic devices equipped with light-emitting diode displays or their segmentation units can be manufactured with high yield.

[0220] Method for manufacturing a component supply substrate: The manufacturing method of the component supply substrate of the present invention is a method for manufacturing a component supply substrate for transferring a plurality of components to a supply destination, characterized by comprising: The first mounting step involves mounting a plurality of components on a supply substrate. The selective removal step involves selectively removing defective components from the aforementioned supply substrate. The second mounting step involves transferring the normal component to the location on the aforementioned supply substrate where the aforementioned defective component was previously disposed.

[0221] In the manufacturing method of the light-emitting diode supply substrate of the present invention, if the light-emitting diode is replaced by a component such as a tiny electrical component or a tiny semiconductor wafer, a component supply substrate can be manufactured. This component supply substrate can be used for three-dimensional mounting and the manufacture of electrical / electronic machines.

[0222] By using a component supply substrate manufactured in this manner, multiple normal components can be transferred together to a supply destination via laser lift-off or imprinting. That is, according to the manufacturing method of the component supply substrate of the present invention, a component supply substrate capable of transferring multiple normal components together to a supply destination can be manufactured. Furthermore, components at desired locations on the component supply substrate manufactured according to the present invention can be selected, and normal components can be transferred to a supply destination via laser lift-off. In other words, a component supply substrate can be manufactured that can transfer normal components regardless of the selected location.

[0223] Therefore, such a method for manufacturing a component supply substrate can be used, for example, for three-dimensional mounting and the manufacture of electrical / electronic machines.

[0224] As tiny electrical components, there are resistors, capacitors, and inductors. Among tiny semiconductor wafers are Si-CMOS semiconductor ICs and discrete semiconductor wafers such as LSIs and diodes, as well as compound semiconductor wafers. In addition, it can also process MEMS components such as accelerometers.

[0225] Furthermore, the present invention is not limited to the embodiments described above. The embodiments described above are examples, and all forms having a structure that is substantially the same as the technical concept described in the claims of the present invention and performing the same function are covered within the technical scope of the present invention.

[0226] 1: Starting substrate 2: Light Emitting Diode 2': Defective light-emitting diode 3: Electrode 4: First supply substrate 5: Second supply substrate 6: Laser light 7: Container 8: Supplementary substrate 9: Light Emitting Diode 10: Location 11: Third-party substrate supplier 21: Starting substrate 22: Red light-emitting diode 23: Electrode 24: Electrode 25: Next layer 39: Display panel substrate 41:Substrate 42: Adhesive layer 51:Substrate 52: Adhesive layer 100: First light-emitting diode supply substrate 200: Second light-emitting diode supply substrate 300: Display panel

[0227] Domestic storage information (please note in order of storage institution, date, and number) none Overseas storage information (please note in the order of storage country, institution, date, and number) none

Claims

1. A method for removing defective light-emitting diodes (LEDs), comprising: selectively irradiating the defective LEDs onto a plurality of LEDs transferred to an adhesive layer on a supply substrate having a quartz substrate and the aforementioned adhesive layer disposed on the quartz substrate; characterized in that it comprises: selectively irradiating the defective LEDs toward the supply substrate with laser light; and selectively removing the defective LEDs, wherein the adhesive layer exposed after the defective LEDs are removed is capable of re-adhereing a normal LED.

2. The method for removing a defective light-emitting diode as described in claim 1, wherein the aforementioned adhesive layer is obtained from a pressure-sensitive adhesive comprising silicone.

3. The method for removing a defective light-emitting diode as described in claim 1, wherein the aforementioned adhesive layer is a silicone resin layer.

4. The method for removing defective light-emitting diodes as described in claim 1, wherein the aforementioned adhesive layer is not eroded by the aforementioned laser light.

5. The removal method as described in claim 1, wherein the aforementioned quartz substrate is synthetic quartz.

6. The method for removing defective light-emitting diodes as described in claim 1, wherein the in-plane film thickness uniformity of the aforementioned quartz substrate is less than 1 μm.

7. The method for removing a defective light-emitting diode as described in claim 1, wherein the longest portion of the aforementioned light-emitting diode is less than 300 μm.

8. The method for removing a defective light-emitting diode as described in claim 1, wherein the aforementioned adhesive layer is not attached to the removed defective light-emitting diode.

9. The method for removing a defective light-emitting diode as described in claim 1, wherein the aforementioned laser is an excimer laser.

10. The method for removing defective light-emitting diodes as described in claim 9, wherein the excimer of the aforementioned excimer laser is XeCl (308 nm), KrF (248 nm), or ArF (193 nm).

11. The method for removing a defective light-emitting diode as described in claim 1, wherein a difference arises between the thermal expansion of the defective light-emitting diode and the thermal expansion of the adhesive layer under the aforementioned laser light irradiation.

12. The method for removing defective light-emitting diodes as described in claim 1, wherein the plurality of light-emitting diodes disposed on the aforementioned adhesive layer of the aforementioned supply substrate are manufactured on a starting substrate and transferred by laser, including the aforementioned defective light-emitting diodes.

13. The method for removing defective light-emitting diodes as described in claim 1, wherein a plurality of light-emitting diodes disposed on the adhesive layer of the aforementioned supply substrate are fixed to the starting substrate by an adhesive layer and transferred by laser, including the aforementioned defective light-emitting diodes.

14. The method for removing defective light-emitting diodes as described in claim 12 or 13, wherein the aforementioned starting substrate is a sapphire substrate.

15. The method for removing a defective light-emitting diode as described in claim 13, wherein the aforementioned adhesive layer is a BCB adhesive layer.

16. A method for repairing a defective light-emitting diode (LED) to a normal LED, characterized by comprising: The normal light-emitting diode was transferred to the area where the aforementioned defective light-emitting diode had been removed by the method of removing defective light-emitting diodes as described in any one of claims 1 to 11.

17. A method for manufacturing a display panel, comprising the step of: transferring the aforementioned normal light-emitting diodes using a supply substrate provided with only normal light-emitting diodes through the repair method described in claim 16.

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