The diaphragm configuration that defines the coating area of ​​the sputtering source, and the sputtering apparatus.

Abstract

This invention relates to a diaphragm configuration for defining an aperture stop that defines a coating region for coating deposition by a sputtering source, and a sputtering apparatus using the diaphragm configuration. The diaphragm configuration includes a body 13, wherein the body 13 includes a channel 14 whose extent is limited by a channel edge. To allow the diaphragm opening to change shape in the field over time, the diaphragm configuration has at least one diaphragm plate 17, 17', 17" mounted on the body 13 and movable back and forth toward the channel 14. The diaphragm configuration also includes a moving device operatively connected to the diaphragm plates 17, 17', 17" for moving them.

Description

Technical Field

[0001] The present invention relates to a diaphragm configuration for defining an aperture aperture region for a coating generated by sputtering from a sputtering source, and a sputtering apparatus having such a diaphragm configuration. Prior Technology

[0002] Sputtering apparatuses typically have a substrate holder and one or more sputtering sources, which generate vapor-like coating material. In a coating section, the substrate and sputtering sources, situated in a vacuum process gas, are positioned opposite each other by the substrate holder and a suitable sputtering source holder, so that the coating material emitted by the sputtering sources is deposited onto the coating area on the substrate surface. To coat multiple substrates, the substrates must be moved relative to the sputtering sources during the sputtering process.

[0003] The substrate is typically configured based on the static rated vapor distribution. Moving the substrate can only compensate for statistical deviations in the transport direction. Rotating the substrate can compensate for statistical deviations in the tangential direction.

[0004] The coating region typically refers to the area between the coating source and the surface of the substrate to be coated, where vaporous coating material undergoes a unique, directional spatial diffusion. During sputtering, the coating region constitutes a line-of-sight connection between at least one area of ​​the target and at least one segment of the substrate surface. The material diffusion occurring in the coating region differs from diffused vapor; it is a distribution characteristic determined by process features and can be influenced. This line-of-sight connection in the coating region is determined by the sputtering pressure range, which is approximately between 10⁻⁴ bis 10⁻² mbar, within which the mean free path length of vapor particles is greater than the distance between the target and the substrate.

[0005] Similar to a flat substrate, the surface of the 3D shaped substrate referred to in this article does not include sides, back surfaces, or grooves. Because the substrate is fixed, these surfaces are not line-of-sight connected to the target. Whether or not to flip the substrate and coat these surfaces in the next sputtering operation is irrelevant, but in most cases, it is not desirable to do so.

[0006] Prior art used planar magnetron sputtering sources or cylindrical rotating magnetron sputtering sources (planar magnetrons or tubular magnetrons) as sputtering sources. These sputtering sources were placed above or below the substrate, and their function was to propagate the dust-removed material toward the substrate and deposit it on the substrate.

[0007] A tubular magnetron comprises a cylindrical cathode that can rotate about its own longitudinal axis. The outer shell of this cylindrical cathode is made of sputterable target material. Inside this tubular target, there is typically a magnet system extending the entire length of the tubular target. Planar magnetrons use a plate target and a magnet system located behind the plate target, instead of a tubular target.

[0008] If a planar magnetron is used, the defining plane of the sputtering source is the surface of the planar target and the surface of the magnet system located behind and parallel to that surface. If a rotating cylindrical magnetron is used, the axis of rotation of the cylinder and the parallel magnet system is the defining axis of the sputtering source. This plane or axis determines the direction and solid angle distribution of the material vapor ejection (the so-called sputtering beam) generated by sputtering.

[0009] The purpose of coating is usually to deposit a coating on a substrate, and the coating thickness and properties are uniform or distributed in a desired manner, while taking the movement of the substrate into account.

[0010] Figures 1A and 1B schematically illustrate an example of coating using a prior art apparatus, in which a plurality of circular substrates 2 are mounted on a substrate support, i.e., on a rotating disk 1 in this example. The rotating disk 1 rotates about a rotation axis 3 (as indicated by the arrows in the figures), wherein the rotation axis 3 is perpendicular to the surface of the rotating disk 1, and can optionally also be perpendicular to the surface of the substrate 2.

[0011] A sputtering source 4 is provided on the substrate 2. In this example, the sputtering source 4 is composed of two parallel tubular magnetrons and a target tube (double tubular magnetron) that rotates around its rotation axis 5. The coating material sputtered from the sputtering source 4 is spread out in a unique, usually petal-shaped material flow under undisturbed conditions and deposited on the moving substrate.

[0012] Figure 1B shows a cross-sectional view of the device shown in Figure 1A.

[0013] In addition to the tubular magnetron shown in the figure above, one or more planar magnetrons can also be used. In addition to depositing the coating on the substrate 2 from top to bottom as shown in the figure above (downward sputtering), the substrate can also be placed above the sputtering source (upward sputtering) (not shown).

[0014] If a substrate to be coated passes by a fixed sputtering source, the amount of deposited material and the locally achievable coating thickness are determined by the static evaporation rate per unit area of ​​the sputtering source and the moving speed of the substrate. Prior art vacuum coating apparatuses typically require determining the local and temporal variations in plasma distribution and deposition rate. For example, in addition to variations in plasma distribution and deposition rate due to the size of the sputtering source, the plasma distribution and deposition rate of a rotating or rotatable substrate will also differ along the radial direction of rotation 8 (Figure 2A). This is because each circular track has a different orbital velocity, resulting in a different residence time per unit area facing the sputtering source.

[0015] To compensate for differences in deposition rates, a prior art solution involves using a fixed diaphragm configuration 6 (Fig. 2B) with an appropriate shape, wherein the diaphragm configuration 6 has a suitable diaphragm opening 7 between the substrate 2 and the sputtering source 4. If the substrate 4 to be coated is rotating or rotatable, the shape of the diaphragm opening 7 is approximately trapezoidal. In this way, rate differences on different circular tracks can be compensated for. If the substrate is moving linearly, the edge region of the sputtering source should generally be shielded. For the sake of simplicity and ease of viewing, the diaphragm configuration of Fig. 2B is not shown in Fig. 2A.

[0016] The drawback of the above solution is the use of a static diaphragm, meaning the vacuum must be broken and the coating chamber opened to adjust the diaphragm and counteract changes in sputtering conditions over time. To periodically match the coating thickness, the following steps are required: First, complete a test coating and calculate the coating thickness distribution. Then, based on the coating thickness distribution, determine the correction value for the boundary edge of the diaphragm opening empirically or by calculation. During this process, the coating system must be ventilated, the diaphragm removed, and the diaphragm opening modified. After reinserting the diaphragm, the coating parameters of the coating system must be reconfigured, and a new test coating is performed. The coating thickness measurement is then repeated, and this process must be repeated until the desired coating thickness uniformity is achieved.

[0017] This operating method significantly reduces the uptime for deposition. However, each interruption of the process and each system restart affects the coating, including unforeseen errors, coating thickness variations, and contamination that must be addressed. Furthermore, an inherent problem with this sputtering method is its inability to maintain stable sputtering conditions over extended periods. During a typical coating time of 1 to 2 days, process parameters can deviate by approximately + / - 5%. Clearly, if the required coating thickness uniformity is less than + / - 0.2%, achieving a satisfactory coating using known methods would be extremely costly and time-consuming. Summary of the Invention

[0018] The purpose of this invention is to provide a diaphragm configuration for an aperture aperture and a sputtering apparatus having such a diaphragm configuration, wherein the diaphragm opening of the diaphragm configuration can change with time and shape, and the diaphragm opening can be adjusted on-site to improve the uniformity of the coating thickness to be deposited, thereby increasing the yield of a coating process.

[0019] This invention is particularly applicable to tubular magnetrons, but also to planar magnetrons, regardless of whether the sputtering source used is a single sputtering source or multiple sputtering sources.

[0020] The present invention is intended to be applicable to known sputtering apparatuses, such as batch apparatuses, continuous apparatuses, single-chamber apparatuses, and sputtering apparatuses that deposit coatings on substrates with circular moving tracks, such as substrates on rotating disks or rotating substrates.

[0021] This invention is also applicable to rotating single substrates, as well as multiple single substrates fixed on a rotatable substrate support (rotating disk), and similarly, to substrates fixed on such substrate supports and capable of planetary movement. The method and apparatus of this invention are also capable of coating single substrates with rotating axes.

[0022] The subject of this invention is the diaphragm configuration of an aperture aperture, and the diaphragm opening can be changed in-situ. One or more diaphragm plates can move back and forth along the channel, thereby more or less obscuring the diaphragm opening and preventing sputtered material from directly contacting the substrate in the obscured area. Possible movement can be achieved through linear movement, rotation, or a combination of both.

[0023] This method not only allows for absolute enlargement or reduction of the diaphragm opening, but also enables locally distinguishable changes in the opening's contour. During the coating process, the size and shape of the diaphragm opening can be altered without opening the coating chamber.

[0024] The subject of this invention also includes a sputtering apparatus having such a diaphragm configuration.

[0025] This diaphragm configuration includes a body containing a channel whose extent is limited by a channel edge. This channel defines the maximum adjustable diaphragm opening. The size and shape of the diaphragm opening can be adjusted using at least one plate.

[0026] The diaphragm plate is mounted on the main body, thus allowing it to move relative to the channel. In the case of rotation, the diaphragm plate can rotate back and forth around a rotation point D located on the main body towards the channel. A combination of these two modes of motion is also possible, meaning that the elements constituting the rotation point D can displace with the diaphragm plate relative to the channel.

[0027] This allows for better results. Ideally, this displacement should be perpendicular to the substrate's direction of movement; that is, when the substrate moves in a straight line, this displacement is towards one of the two edges of the substrate, and when the substrate rotates, this displacement is radially inward and / or outward. Such displacement can change the lateral or radial position of the sputtering petals acting on the substrate. This displaceability of the sputtering petals is a significant advantage if the length of the sputtering source is significantly greater than the length of the substrate surface in the corresponding direction.

[0028] The term "moving forward toward the channel" refers to the diaphragm plate entering the channel along the line of sight between the substrate surface and the sputtering source, passing through the channel edge of the body in a segmented and variable manner. The shapes and positions of the body and the diaphragm plate are matched so that they can jointly prevent the diaphragm configuration from achieving its normal function, that is, restricting material flow and thus restricting the coating area on the substrate surface. For example, both the body and the diaphragm plate can be plate-shaped.

[0029] The term "profile" typically describes the projection of a channel onto a suitable plane (preferably a horizontal plane), and therefore also includes three-dimensionally shaped (e.g., arched) channels. Suitable planes include, for example, the substrate surface, the transport plane on which the substrate is transported, or other clearly identifiable planes within a coating system.

[0030] The above description also applies to the body and the diaphragm plate that matches the body. The term "diaphragm plate" refers to a plate-shaped element configured in the diaphragm configuration, which also includes three-dimensionally shaped "plates".

[0031] The channels of the body can have a size and shape that match the sputtering method used. For example, the channel profile can be designed to minimize the systematic deviations of the aforementioned and other known deposition rates. The channel profile is typically matched to the size and shape of the sputtering source.

[0032] To enable changes in the size and shape of the diaphragm opening, the diaphragm configuration also includes a moving device tasked with activating the diaphragm plate to move it. This activating connection can be achieved through mechanical couplings and actuators, an electric drive with a corresponding controller, or a combination of both. The moving device can move at least one diaphragm plate located outside the sputtering chamber.

[0033] If the diaphragm configuration has multiple diaphragm plates, each diaphragm plate can be moved individually by a moving device. The design of the moving device is determined by factors such as the components of the diaphragm configuration to be moved independently, the size of the diaphragm opening, the method and range of movement, and the method of driving the movement.

[0034] It is certain that the shape of the boundary segment of the diaphragm plate has a significant impact on the uniformity of coating properties, because this boundary segment, due to movement, will more or less extend into the channel. In the following description, the boundary segment that may extend into the channel due to movement will sometimes be referred to as the "inner ridge". Especially for rotating substrates, the shape of the inner ridge has a great influence on the deposition rate. A 1 mm change in the shape of the inner ridge will result in a + / -1% change in the deposition rate, depending on the distance from the substrate's rotation axis.

[0035] In particular, it can be determined that the bending of the inner edge of the diaphragm plate, at least in segments, either protruding or concave, has a significant impact on the uniformity of the coating thickness.

[0036] The protrusions and depressions referred to here refer only to the geometry of the diaphragm plate and are unrelated to the geometry of the diaphragm opening formed through the diaphragm plate. From this perspective, when two diaphragm plates are in the same position, the diaphragm plate with a convex curved inner edge will narrow the diaphragm opening to a greater extent than the diaphragm plate with a concave curved inner edge, due to the greater distance it extends into the diaphragm opening.

[0037] Combining two bending patterns in succession, and / or combining two bending patterns with straight segments, can create a variety of variations in the size and shape of the diaphragm openings, thus affecting the deposition rate to varying degrees. In some cases, it is advantageous if the inner ridge formed by the convex bend is larger than that formed by the concave bend. The bell shape is an example of this.

[0038] In addition to the length of one type of bend, another type of bend, or a combination of two bends, the desired local deposition rate can also be changed by moving one or more diaphragm plates through the degree of bend. The type, range, and location of the diaphragm plate bend required for a specific coating task can be determined in advance by means of experiments or computational simulations.

[0039] According to another embodiment of the diaphragm configuration, the diaphragm plate consists of two parts, wherein two overlapping sub-diaphragms can move relative to each other, that is, they can be displaced relative to each other, and / or rotate about the same rotation point D. In addition to the variations described above, this embodiment can also change the shape of the inner ridges of the diaphragm plate composed of the two sub-diaphragms. To achieve this, the two sub-diaphragms can move relative to each other, so that they can overlap more or less.

[0040] Because the relative positions of the diaphragm plate and / or sub-diaphragm in this implementation are adjustable, multiple diaphragm openings can be formed within a single diaphragm configuration.

[0041] According to another embodiment of the diaphragm configuration, the channels of the body are compatible with the coating process, particularly the spatial vapor propagation during the coating process, and with known non-uniformities in the deposition rate. Correspondingly, the channel profile is generally a simple n-angle in a plane, where n is a natural number (n ∈ N), and n > 2. The shape of the diaphragm opening can be varied through at least one diaphragm plate, thus allowing for a variety of channel geometries to be used.

[0042] A simple n-gon in a plane is characterized by its corners lying on a plane, and that no two sides of the n-gon have any other points in common except for these corners.

[0043] The "approximately" mentioned earlier refers to a planar n-angle where the sides can retain the basic shape of an n-angle, but these sides are not necessarily composed of straight lines. Such an n-angle also includes the use of circular channels. The channels preferably have 3, 4, 5, or 6 corners.

[0044] According to another embodiment, if the number of n-angles in the profile of such a channel is limited to 10 or less, then the general channel size can constitute well-defined corners and sides. This allows the rotation point D of one of the one or more diaphragm plates used to be positioned at a corner or side of an n-angle. Therefore, the channel can be modified in various ways. For example, a corner can be formed by a concave or convex inner ridge, the radius of which is determined by the technical possibilities of manufacturing the body. Or the channel can have a straight or curved side, for example, this side can be covered by a more or less curved inner ridge of a diaphragm plate extending into the channel.

[0045] According to a variation of this implementation, the diaphragm configuration has two diaphragm plates whose rotation points D are located at two adjacent corners of the channel or two corners located on opposite diagonals, thus enabling the reinforcement and / or symmetrical configuration of the adjustment options described above.

[0046] An alternative approach is to use the channel profile to match known or previously calculated vapor distribution characteristics, where the channel profile is defined by a free curve. The free curve can be two-dimensional or three-dimensional and must satisfy known boundary conditions to achieve a specific purpose. The free curve can be described using piecewise polynomial functions and then modeled using computer-aided design.

[0047] In this case, the configuration of one or more rotation points of the rotatable diaphragm plate is combined with the concept of a free curve. For example, similar to the configuration of rotation points on a channel with an n-angle, two or more rotation points can be adjacent to each other or separated by a distance to achieve the desired variation in the diaphragm opening.

[0048] In addition to the basic components and enclosed vacuum chamber mentioned above, the sputtering apparatus using this diaphragm configuration also includes an aperture stop with the aforementioned diaphragm configuration. The aperture stop within the vacuum chamber is positioned between the substrate surface to be coated and the sputtering source.

[0049] In addition, the sputtering apparatus also has a moving device that can be operated from outside the vacuum chamber via a suitable control device. The control device has mechanical, pneumatic, hydraulic, or electric actuators and / or drives introduced into or located within the vacuum chamber to move at least one diaphragm plate within the vacuum chamber. A variety of different actuators and drives are available for those skilled in the art to choose from, enabling the operation of other objects located within the enclosed vacuum chamber from outside the vacuum chamber.

[0050] According to one embodiment of the sputtering apparatus, the substrate holder functions to cause the substrate to move in a circular and / or rotational motion about a central axis of rotation of the substrate holder. This rotating disk positions one or more substrates on a rotating disk-shaped support.

[0051] The diaphragm configuration of this rotating disk typically has diaphragm openings with a basic shape of square (preferably trapezoidal). The trapezoidal diaphragm openings can compensate for the systematic differences in deposition rates caused by the radii of the individual circular tracks.

[0052] However, studies on the layer thickness of substrates undergoing circular or rotational motion show that achieving uniform coating thickness places high demands on diaphragm configuration. Besides the previously mentioned variations in deposition rates in the radial direction, the relationship between deposition rate and the distance to the target center must also be considered. Furthermore, secondary effects resulting from reduced coating uniformity must be taken into account, such as unavoidable mechanical or physical manufacturing tolerances. For example, the critical angles for magnetic field strength and flux. Additionally, the reproducibility of the mounting position, or the height of the target above the substrate, which increases with the duration of coating.

[0053] In particular, the effects mentioned in the previous paragraph may make it impossible to make accurate predictions beforehand when the coating process begins. In order to achieve the required coating uniformity, the appropriate size and shape of the diaphragm openings are crucial in subsequent processes.

[0054] Since the shape of the diaphragm opening can be changed, known trapezoidal channels can be used, but other arbitrary channel shapes can also be used.

[0055] While there are known long-term effects, such as variations in uniformity due to extended target lifespan, these can be offset by the absence of periodic coating thickness measurements. However, for automated sputtering systems, an adjustment circuit for a field measurement system that measures coating thickness can be activated to adjust the coating thickness. This can also reduce or offset unknown effects. Such an adjustment circuit utilizes feedback signals from sensors located in appropriate positions, such as from an optical thickness measurement system on a different transport path, to reduce errors, improve coating thickness uniformity, and selectively improve the photoelectric properties of the coating.

[0056] The present invention should also include other mounting configurations of the substrate on the basic support.

[0057] During coating using this sputtering apparatus, the substrate passes by the sputtering source. In this process, sputtered material is deposited on a coating area on the surface of the substrate to be coated, wherein this coating area is determined by the diaphragm opening described above and the diaphragm configuration disposed between the substrate and the sputtering source.

[0058] During coating, the geometry and / or area of ​​the diaphragm opening can be changed on-site via at least one diaphragm plate, wherein the movable diaphragm plate (e.g., rotating about a rotation point D) is mounted on the body of the diaphragm configuration and moves, in particular rotates, on a predefined track to more or less close the channel of the body. The movement of one or more diaphragm plates causes the outer contour of the channel to be covered at least segmentally to change the size and shape of the channel. For example, the coating method used in the sputtering apparatus of the present invention includes the following steps:

[0059] As with previous techniques, a test substrate is first coated, and the coating thickness and / or coating property distribution are calculated.

[0060] Based on this, the correction value of the diaphragm opening boundary is calculated, and the diaphragm plate is adjusted using the moving device of the diaphragm configuration. If necessary, its sub-diaphragms are also adjusted.

[0061] After adjustments, another test substrate was coated to determine the extent to which the desired coating thickness distribution could be achieved initially.

[0062] After completing the above steps, the formal coating process can begin. Non-uniformities that occur and are identified during the coating process are measured using an on-site measurement system. Furthermore, a correction algorithm designed for this purpose can be applied.

[0063] The correction value obtained in the above manner is used to readjust the diaphragm plate on site using a mobile device, and the sub-diaphragm is also readjusted if necessary.

[0064] In summary, it can be determined that the diaphragm configuration of the present invention adjusts the diaphragm plate with an accuracy of less than + / -0.2 mm. By adjusting the inner edge of at least one diaphragm plate to a target achievable position, and the position of the diaphragm opening relative to the sputtering source, the compensation effect for vapor source non-uniformity is superior to that of prior art. Because the diaphragm opening can be differentiated and precisely adjusted, a higher deposition rate can be achieved.

[0065] One or more (preferably two) diaphragm plates can be selectively used. While using only one diaphragm plate can achieve a higher deposition rate compared to using two or more diaphragm plates, using multiple diaphragm plates provides greater flexibility in adjustment, which is highly advantageous for eliminating nonlinear inhomogeneities.

[0066] Furthermore, the shape of the inner ridges of the diaphragm plate allows for localized adjustments. Compared to prior art, the diaphragm configuration of this invention achieves better coating uniformity and improved coating deposition efficiency. In particular, experimental results show that the rotating disk coating apparatus can achieve coating thickness variations of less than + / - 0.2%. Simple Explanation of the Diagram

[0067] The invention will be further described below with reference to the accompanying drawings. Wherein: Figures 1A and 1B: Perspective and cross-sectional views of a prior art sputtering apparatus with a rotating disk and a dual tubular magnetron. Figures 2A to 2B: Embodiments of diaphragm configurations in the prior art. Figures 3A to 3C: Embodiments of the diaphragm configuration of the present invention with a diaphragm plate on one side, with the line of sight falling on the sputtering source. Figures 4A to 4D: Embodiment of the diaphragm configuration of the present invention with diaphragm plates on both sides, with the line of sight falling on the sputtering source. Figure 5: Schematic diagram of the sputtering apparatus of the present invention. Implementation

[0068] The embodiments of the present invention described below (Figures 2 to 5) are merely examples for illustrating the present invention and do not limit the scope of the invention in any way. Where it is appropriate and reasonable, those skilled in the art can combine the features of the different embodiments of the present invention described above and below with other embodiments and make improvements.

[0069] The following figures are shown schematically only, and only the parts necessary to explain the invention are shown. These figures are not complete and are not drawn to scale.

[0070] Figures 3A to 3C and 4A to 4D show the diaphragm configuration 6 of the present invention for rotating a substrate (not shown) during the coating process, wherein the diaphragm opening 11 can be selectively adjusted. In these figures, the line of sight is through the diaphragm opening 11, showing the sputtering source 12 located behind it. The embodiment shown in the figures uses a dual-tubular magnetron, but this is only by way of example and is not a limitation to the use of dual-tubular magnetrons.

[0071] The diaphragm configuration 6 includes a body 13, which contains a channel 14. The channel 14 has a generally trapezoidal base, wherein the two base edges (inner base edge and outer base edge) 15', 15" are rounded, which is slightly different from the base edges of a standard trapezoid, but this is only as an example and is not a restriction that the base edges must be rounded. The inner base edge 15', which is the base edge closer to the rotation axis (not shown) of the substrate support, is the shorter base edge.

[0072] The aperture stop is positioned in front of the sputtering source 12, and the two elements are symmetrical to each other, with the height of the trapezoid parallel to the axis of the tubular magnetron. This position of the two elements is merely an example and is not a requirement that they must be in this position.

[0073] In the simplest embodiment, a diaphragm plate 17 that can move relative to the body is installed on one of the two sides 16', 16" . The movement can be any of the movement methods mentioned above, and the double arrows in the figure represent the corresponding movement methods of the diaphragm plate.

[0074] In the case shown in Figure 3A, the diaphragm plate 17 extends into the channel 14 almost along the entire length of the side 16”, thus narrowing the channel 14. The inner edge 18 of the diaphragm plate 17 (at least in the visible area) has a convex bend, so the middle of the channel is the narrowest part, while it does not narrow at all at the bottom edges 15’, 15”.

[0075] For ease of distinction and comparison, other embodiments of the diaphragm configuration shown in Figures 3B and 3C, and Figures 4A to 4D, also share the same basic structure, namely the body, the shape of the channels, and the sputtering source used. Clearly, these elements are not limited to the embodiments shown.

[0076] The diaphragm configuration of Figure 3B has a diaphragm plate 17 consisting of two parts, as described in Figure 3A, with the diaphragm plate 17 extending into the channel 14 only on one side 16". Two sub-diaphragms 19', 19" overlap in a section, so that the sub-diaphragm extending into the channel 14 beyond this section is deeper into the channel 14 than the other sub-diaphragm. Both sub-diaphragms 19', 19" have a convex bend at least in the visible area, with the bend of sub-diaphragm 19" having a greater curvature towards its outer bottom edge 15"; however, this is merely an example and not a limitation on having this convex bend.

[0077] In this embodiment, the diaphragm plate 17 can be moved such that the two sub-diaphragms rotate together (represented only by a double arrow) about a rotation point D (represented by a cross), where the rotation point D is adjacent to the corner of the side 16" of the channel 14 covered by the diaphragm plate 17. Due to the rotation of the sub-diaphragms 19', 19" their inner edges 18', 18" can extend further into or out of the channel 14. Alternatively, the two sub-diaphragms 19', 19" can rotate independently about the same rotation point D.

[0078] The embodiment shown in Figure 3C is an improvement upon the embodiment shown in Figure 3B. In this embodiment, the rotation point D of the two sub-diaphragms 19', 19" is approximately located in the middle of the side 16"; this can be achieved through an improvement to the diaphragm plate 17. By rotating the two sub-diaphragms 19', 19" in one direction or the other (indicated by the double arrows in the figure), significantly different improvements can be made to the outer and inner sections of the side 16" section.

[0079] The most significant difference between the embodiments shown in Figures 4A to 4D and those described above is that the two sides 16' and 16" of the roughly trapezoidal channel 14 each have a movable diaphragm plate 17' and 17" as described in Figure 3A. This part can be referred to in the preceding description.

[0080] For comparison, in the embodiment of Figure 4B, each of the two sides 16', 16" has a two-part diaphragm plate 17', 17" that can each rotate about a rotation point D. The sub-diaphragms 19', 19" in this embodiment also have two different bends, thus allowing for greater variability in the adjustment position of the ultimately functioning diaphragm opening 11. For a description of the sub-diaphragms and their rotation points, and the resulting adjustments, please refer to Figure 3B.

[0081] The difference between the embodiment in Figure 4C and the embodiment in Figure 4B is that the rotation point D is located at a corner between a side edge 16', 16" and the outer bottom edge 15". As a result of this arrangement, because the distance between the inner section of the diaphragm opening 11 and the rotation point D is relatively large, the rotation of the diaphragm plates 17', 17" through the inner section of the diaphragm opening 11 allows for significantly greater adjustment of the inner section. Since the two rotation points D are positioned differently on the two sides 16', 16", different degrees of adjustment can be made on both sides of the channel (Figure 4D).

[0082] Through other combinations of features of the embodiments shown in Figures 3A to 3C and Figures 4A to 4D, other adjustments to the inner edges of the diaphragm plate and sub-diaphragm, and improvements to the channels and movement methods, a wide variety of adjustment methods can be generated to balance or offset local differences in deposition rate.

[0083] Figure 5 schematically shows the key components of the sputtering apparatus 40 of the present invention, wherein the sputtering apparatus 40 uses any of the diaphragm configurations 6 described above.

[0084] The sputtering apparatus 40 is generally circular in shape, with multiple stations distributed around its circumference. These stations directly or indirectly form a coating on the substrate 41 with a desired coating thickness and / or coating characteristic distribution.

[0085] The substrate 41 is located on the support section 42 of the substrate support (not shown) and enters a processing station 45 via a loading station 43 separated by a vacuum lock 44 and a vacuum area of ​​the sputtering device.

[0086] The substrate 41 is placed on a clockwise rotating disk 46 (as shown by the arrow, this is just an example and does not necessarily have to be clockwise). The disk 46 is rotated gradually using a suitable rotating unit (not shown), and the substrate 41 gradually passes through the various stations of the sputtering apparatus 40, including the coating station, so that the carrier section 42 and the coated substrate 41 can be removed from the processing station 45.

[0087] Figure 5 shows a first process station 47' in the rotational direction and a sputtering source 48 for coating a substrate 41. In a monitoring room 49, located clockwise after the first process station 47' and equipped with the necessary measuring devices, the coating thickness is measured at multiple measuring points 53 on the substrate 41. Other coating properties, such as transparency or surface resistivity, can also be measured if necessary. For example, measurements can be taken at two, three (Figure 5), or more measuring points arranged adjacently in the radial direction to achieve the desired uniformity of the radial coating thickness in the diaphragm configuration of the present invention. An alternative or additional approach is to position the measuring points 53 at other locations to obtain more information. The m measuring points 53 (m ∈ N, and m > 0) preferably have n measuring channels (not shown).

[0088] The measured value 54 is transmitted to the control unit 50, compared with the rated value 55, and the appropriate algorithm is used to calculate from the comparison result the correction adjustment to be made to the diaphragm configuration in the next one or more process stations 47" and 47'".

[0089] A drive unit 52 is activated by the control unit 50 to rotate and / or move the diaphragm plate (not shown) and any possible sub-diaphragms (not shown) of the diaphragm configuration 51 to achieve the desired coating result.

[0090] In the sputtering apparatus shown in Figure 5, the diaphragm opening in the third process station 47'" is only an example and does not represent that it must be completely closed.

[0091] 1: Baseboard support, rotating disk 2. 41: Substrate 3, 5: Rotation axis 4, 12, 48: Sputtering source 6: Diaphragm Configuration 7, 11: Diaphragm opening 8: Radial direction 13:Ontology 14: Channel 15': Inner bottom edge 15" : Outer bottom edge 16', 16" : Side 17, 17', 17": Diaphragm plate 18, 18', 18" : Inner edge 19', 19" : diaphragm 40: Sputtering device 42: Bearing section 43: Loading Station 44: Vacuum Lock 45: Processing Station 46: Rotating disc 47', 47", 47'": Process Station 49: Monitoring Room 50: Control Unit 52: Drive Unit 53: Measurement Point 54: Measured value 55: Rated value D: Rotation point

Claims

1. A diaphragm configuration for defining an effective area for coating deposition, the diaphragm configuration comprising a body (13), wherein the body (13) includes a channel (14) whose extent is limited by a channel edge, wherein the diaphragm configuration has at least one diaphragm plate (17, 17', 17") mounted on the body (13) and movable back and forth toward the channel (14), and a moving device operatively connected to the at least one diaphragm plate (17, 17', 17") for moving it, characterized in that two diaphragm plates (17, 17', 17") and / or two sub-diaphragms (19', 19") can be rotated independently of each other via the moving device.

2. The diaphragm configuration as described in claim 1, wherein: The two sub-diaphragms (19', 19") of the at least one diaphragm plate can move relative to each other and / or rotate about the same point of rotation.

3. A diaphragm configuration for defining an effective area for coating deposition, the diaphragm configuration comprising a body (13) including a channel (14) whose extent is limited by a channel edge, wherein the diaphragm configuration has at least one diaphragm plate (17, 17', 17") mounted on the body (13) and movable toward the channel (14), and a moving device operatively connected to the at least one diaphragm plate (17, 17', 17") for moving it, characterized in that: the at least one diaphragm plate (17, 17', 17") is rotatable toward the channel (14) about a rotation point (D) located on the body (13), and the at least one diaphragm plate (17, 17', 17") and its rotation point (D) are displaced relative to the channel (14).

4. The diaphragm configuration as described in claim 1 or claim 3, wherein the inner ribs (18, 18', 18") of the diaphragm plates (17, 17', 17") movable within the channel (14) have a bend that is at least progressively convex and / or a bend that is at least progressively concave.

5. The diaphragm configuration as described in claim 1 or claim 3, wherein the diaphragm plate (17, 17', 17") is composed of two parts, wherein two overlapping sub-diaphragms (19', 19") are movable relative to each other.

6. The diaphragm configuration as described in claim 1 or claim 3, wherein the profile of the channel is generally a simple n-angle in a plane, where n ∈ N and n > 2, or its boundary is defined by a free curve.

7. The diaphragm configuration as described in claim 1 or claim 3, wherein the profile of the channel (14) is generally a simple n-angle in a plane, where n ∈ N and 2 < n < 10, while a rotation point (D) is located at a corner or side of the n-angle.

8. The diaphragm configuration as described in claim 1 or claim 3, wherein the profile of the channel (14) is generally a simple n-angle in a plane, where n ∈ N and 2 < n < 10, wherein the diaphragm configuration (6) has two diaphragm plates (17, 17', 17") whose rotation points (D) are located at two adjacent corners of the channel (14) or two corners located on the diagonal, or on the side of the channel (14).

9. The diaphragm configuration as described in claim 1 or claim 3, wherein the profile of the channel (14) is defined by a free curve, while a rotation point (D) is located on the body (13).

10. The diaphragm configuration as described in claim 1 or claim 3, wherein the profile of the channel (14) is defined by a free curve, and the diaphragm configuration (6) has two diaphragm plates (17, 17', 17") whose rotation points (D) on the body (13) are located at two adjacent corners of the channel (14) or two corners located on the diagonal.

11. A sputtering apparatus for depositing a coating on a substrate (2) by sputtering from a sputtering source (4), wherein the sputtering source, positioned on a sputtering source holder, is disposed in a vacuum chamber of the sputtering apparatus (40), and has a substrate holder (1) for positioning and moving at least one substrate (2) relative to the sputtering source (48) during sputtering, characterized in that the sputtering apparatus (40) has a diaphragm configuration (6) as described in any one of claims 1 to 10, wherein the diaphragm configuration (6) is disposed between the sputtering source (48) and the surface of the substrate to be coated, and a moving device can be operated from outside the vacuum chamber.

12. The sputtering apparatus of claim 11, wherein the substrate holder (1) causes the substrate (2) to move in a circular and / or rotational motion about a central rotation axis (3) of the substrate holder (1).

13. The sputtering apparatus as claimed in claim 11, wherein the sputtering apparatus (40) includes a measuring unit for measuring the thickness of the deposited coating.

14. The sputtering apparatus as claimed in claim 13, wherein the measuring unit measures the thickness of the deposited coating at two, three, or more measuring points (53).

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