Substrate processing apparatus, and substrate processing method

Abstract

The substrate processing apparatus disclosed herein includes one or more reactors, which substantially prevent a process gas in a reaction space from penetrating into a space outside the reaction space. Furthermore, this disclosure provides a substrate processing apparatus that minimizes the presence of parasitic plasma in a space outside the reaction space.

Description

Technical Field

[0001] One or more embodiments of this disclosure relate to a substrate processing apparatus for suppressing the generation of parasitic plasma, particularly for suppressing parasitic plasma generated in a lower space of a chamber apparatus. Prior Technology

[0002] When processing a substrate in a reactor of a semiconductor and display processing apparatus, various gases are supplied to a reaction space. For example, thin film formation is achieved by periodically supplying source / reaction gases to a substrate. However, due to fluctuations in gas flow rate or the resulting fluctuations in process pressure, some source / reaction gases may penetrate through gaps into a space (e.g., the space below the substrate holder) instead of entering the reaction space. Therefore, the penetrated gases may induce parasitic plasma during plasma processing.

[0003] When RF power is supplied to this reaction space and parasitic plasma is generated in a space outside this reaction space, the plasma capacity of a substrate supplied to this reaction space that substantially promotes the reaction will be reduced due to the amount of parasitic plasma generated, thereby leading to process failure. Summary of the Invention

[0004] One or more embodiments include a substrate processing apparatus that includes a means for suppressing the generation of parasitic plasma in a lower space of one of the chamber apparatuses.

[0005] One or more embodiments include a physical device for minimizing the penetration of a process gas in a reaction space into a lower space of a chamber device.

[0006] Other features will be set forth in part in the following description, and in part will be apparent from the description or learned by practicing the embodiments presented in this disclosure.

[0007] According to one or more embodiments, a substrate processing apparatus includes one or more reactors, each reactor including: an upper body; a substrate holding device; a control ring surrounding the substrate holding device and disposed on a step formed in the upper body, wherein a gap exists between the control ring and the substrate holding device; and a barrier ring formed to surround the substrate holding device at the bottom of the gap, wherein the upper body and the substrate holding device form a reaction space, a lower region of the substrate holding device forms a lower space, the reaction space and the lower space are connected to each other through the gap, the inner diameter of the barrier ring is less than or equal to the outer diameter of the substrate holding device, and the outer diameter of the barrier ring is greater than or equal to the inner diameter of the control ring.

[0008] According to one example of this substrate processing apparatus, an upper surface of the barrier ring may contact a lower surface of the substrate holding device and a lower surface of the control ring to prevent the reaction space and the lower space from communicating through the gap.

[0009] According to one embodiment of this substrate processing apparatus, a protrusion can be formed on the upper surface of the barrier ring, surrounding an outer peripheral surface of the barrier ring. The inner diameter of the protrusion can be greater than or equal to the outer diameter of the substrate holding device. The height of the protrusion can be equal to the vertical distance between the lower surface of the substrate holding device and the lower surface of the control ring. A step can be formed between the upper surface of the barrier ring and the protrusion. The step has an upper surface, a lower surface, and a side surface connecting the upper surface to the lower surface. The upper surface of the step can contact the lower surface of the control ring, and the lower surface of the step can contact the lower surface of the substrate holding device.

[0010] According to another example of this substrate processing apparatus, the side of the step may have a structure that slopes toward the lower surface of the step.

[0011] According to one example of this substrate processing apparatus, the inner diameter of the protrusion may be the same as the outer diameter of the substrate holding device, and the junction between the side surface and the lower surface of the step may contact the junction between the side surface and the lower surface of the substrate holding device.

[0012] According to another example of this substrate processing equipment, the width of the protrusion may be greater than or equal to the width of the gap.

[0013] According to another embodiment of this substrate processing apparatus, the barrier ring may include one or more extensions extending from the inner circumferential surface of the barrier ring toward the center of the barrier ring, and the extension may include a through hole through which a substrate support pin may pass.

[0014] According to another embodiment of this substrate processing apparatus, the substrate holding device may include a pin hole through which the substrate support pin passes, wherein a bushing has a hollow hole through which the substrate support pin passes, and the bushing may be inserted into the pin hole of the substrate holding device, and the length of the bushing may be greater than the thickness of the substrate holding device.

[0015] According to another example of this substrate processing apparatus, the bushing can pass through the through hole of the extension, a thread can be formed in the lower part of the bushing, the thread can be fixed by a nut, and the extension can be located between the substrate holding device and the thread.

[0016] According to another example of this substrate processing apparatus, the extension includes at least one elastomer located on the upper surface of the extension.

[0017] According to another embodiment of this substrate processing apparatus, the barrier ring may include one or more elastomers located on at least one of the upper surface, lower surface and side surface of the step.

[0018] According to another embodiment of this substrate processing apparatus, the substrate processing apparatus may further include: a barrier ring support arranged in the lower space; and a transfer arm configured to transfer the barrier ring.

[0019] According to another embodiment of this substrate processing apparatus, the transfer arm can be configured to raise the barrier ring at the beginning of the substrate processing procedure, such that the upper surface of the barrier ring contacts the lower surface of the substrate holding device and the lower surface of the control ring, and lower the barrier ring after the substrate processing procedure is completed, so as to place the barrier ring on the barrier ring support.

[0020] According to another example of this substrate processing apparatus, the barrier ring support may include a step having an inclined structure.

[0021] According to one or more embodiments, a substrate processing apparatus includes one or more reactors, wherein each reactor includes: an upper body; a substrate holding device; and a control ring, which is separate from the substrate holding device, surrounds the substrate holding device, and is disposed on a step formed on the upper body, wherein a protrusion is formed below the substrate holding device along the outer peripheral surface of the substrate holding device, and the protrusion extends from a side of the substrate holding device to a lower part of the control ring.

[0022] According to another example of this substrate processing equipment, the protrusion can contact the lower surface of the control ring.

[0023] According to one or more embodiments, a substrate processing method using the above-described substrate processing apparatus includes: lowering the substrate holding device; loading a substrate into the substrate holding device; raising the substrate holding device; raising the barrier ring such that the upper surface of the barrier ring contacts the lower surface of the substrate holding device and the lower surface of the control ring; performing a substrate processing procedure; lowering the barrier ring; lowering the substrate holding device; and unloading the substrate.

[0024] According to another example of the substrate processing method, when the barrier ring does not contact the lower surface of the substrate holding device and the control ring, the reaction space and the lower space can be connected to each other through the gap, and when the barrier ring contacts the lower surface of the substrate holding device and the control ring, the reaction space and the lower space can be disconnected from each other.

[0025] According to another example of this substrate processing method, during the substrate processing procedure, the gas introduced into the reaction space is prevented from flowing into the lower space due to the barrier ring.

[0026] According to another embodiment of this substrate processing method, the substrate processing apparatus may further include: a barrier ring support arranged in the lower space; and a transfer arm configured to move the barrier ring, wherein lowering the barrier ring may include placing the barrier ring on the barrier ring support by means of the transfer arm. Simple Explanation of the Diagram

[0027] The above and other features, characteristics, and advantages of certain embodiments of this disclosure will become more apparent from the accompanying drawings and the following description, in which: Figure 1 is a schematic view showing a state in which a process gas in a reaction space penetrates into a lower space of a substrate holding device in a reactor; Figure 2 is a schematic diagram of a substrate processing apparatus according to an embodiment of the concept of this disclosure; Figure 3 is a schematic diagram of a substrate processing apparatus according to an embodiment of the concept of this disclosure, wherein the substrate processing apparatus is equipped with a barrier ring; Figure 4 is a schematic diagram of a barrier ring according to an embodiment of the concept of this disclosure; Figure 5 is a schematic diagram of a substrate processing apparatus equipped with the barrier ring of Figure 4; Figure 6 is based on... Figure 7 is a schematic diagram of a barrier ring according to an embodiment of the present disclosure; Figure 8 is a cross-sectional view of a substrate processing apparatus equipped with the barrier ring of Figure 6; Figure 9 is a cross-sectional view of a substrate holding device equipped with the barrier ring and substrate support pin of Figure 6; Figure 10 is a view of a substrate processing apparatus according to an embodiment of the present disclosure, wherein the substrate processing apparatus includes two or more reactors; Figure 11 is a schematic diagram of a substrate processing apparatus according to another embodiment of the present disclosure; Figure 12 is a schematic diagram of a barrier ring support and a barrier ring placed on the barrier ring support. Figures 13A and 13B are schematic diagrams of a barrier ring, wherein the barrier ring moves vertically by a transfer arm; Figure 14 is a perspective view of a chamber according to an embodiment of the present disclosure, wherein the chamber includes two or more reactors; Figures 15A and 15B are views illustrating the arrangement of a barrier ring and a transfer arm before and after a substrate fabrication process; and Figure 16 is a flowchart showing a substrate processing method according to an embodiment of the present disclosure. Implementation

[0028] Reference will now be made in detail to embodiments, examples of which are illustrated in the accompanying drawings, wherein similar reference numerals refer to similar elements throughout the drawings. In this respect, the embodiments described herein may take different forms and should not be construed as limited to the descriptions set forth herein. Accordingly, the embodiments are described below only by reference to the accompanying drawings to explain various aspects of this specification. As used herein, the term "and / or" includes any and all combinations of one or more of the associated list items. When a statement such as "at least one of..." precedes a series of elements, it modifies the entire series of elements rather than individual elements within that series.

[0029] Several embodiments disclosed herein will be described in detail below with reference to the accompanying drawings.

[0030] In this regard, the embodiments described herein may take different forms and should not be construed as limited to the descriptions set forth herein. Rather, these embodiments are provided only to make this disclosure more thorough and complete, and to fully convey the scope of this disclosure to those skilled in the art.

[0031] The terminology used herein is for the purpose of describing particular embodiments and is not intended to limit this disclosure. Unless the context clearly indicates otherwise, the singular forms “a” and “the” as used herein are intended to include the plural forms as well. It should be further understood that the terms “comprising” and / or “including” as used herein indicate the presence of a group of said features, integers, steps, processes, components, and / or such groups, but do not exclude the presence or addition of one or more other features, integers, steps, processes, components, and / or such groups. As used herein, the term “and / or” includes any and all combinations of one or more of the associated list items.

[0032] It should be understood that although the terms "first," "second," etc., may be used herein to describe various components, assemblies, regions, layers, and / or parts, these components, assemblies, regions, layers, and / or parts should not be limited to these terms. These terms do not indicate any order, quantity, or importance, but are used only to distinguish one component, region, layer, and / or segment from another. Therefore, without departing from the teachings of the embodiments, the first component, assembly, region, layer, or segment discussed below may be referred to as a second component, assembly, region, layer, or segment.

[0033] Several embodiments of the present disclosure will be described below with reference to the accompanying drawings, in which several embodiments of the present disclosure are schematically depicted. In the drawings, the shapes depicted may be expected to vary due to, for example, manufacturing techniques and / or tolerances. Therefore, the embodiments of the present disclosure should not be construed as being limited to the specific regional shapes shown herein, but may include, for example, shape deviations caused by the manufacturing process.

[0034] Although the semiconductor or display substrate deposition apparatus is described herein as a substrate processing apparatus, it should be understood that this disclosure is not limited thereto. The substrate processing apparatus can be any apparatus necessary for depositing materials to form a thin film, and can refer to an apparatus in which raw materials for etching are uniformly supplied or the material is ground. For ease of description, it is assumed below that this substrate processing apparatus is a semiconductor deposition apparatus.

[0035] Figure 1 shows a view of a state in which a process gas in this reaction space penetrates into a lower space of a substrate holding device in a reactor of this substrate processing equipment.

[0036] The reactor 1 in this substrate processing apparatus may include an upper body 2 and a lower body 3. The upper body 2 and the lower body 3 may be connected to each other. Specifically, the upper body 2 and the lower body 3 of the reactor 1 can form an internal space when they are in face-contacting and face-sealing with each other. The reactor 1 may include a substrate holding device 4 and a control ring 5 located in its internal space.

[0037] This reactor can be a reactor in which an atomic layer deposition (ALD) or chemical vapor deposition (CVD) process is performed.

[0038] The upper body 2 of this reactor may include a source / reaction gas inlet 6, a gas supply unit 7, multiple exhaust units 8 and 9, and a control ring 5. The lower body 3 of this reactor may include a filling gas inlet 10. The upper body 2 and the substrate holding device 4 can form a reaction space R. A lower region of the substrate holding device 4 can form a lower space 11. Specifically, the lower body 3 and the substrate holding device 4 can form this lower space 11.

[0039] This gas supply unit 7 can be implemented, for example, in a lateral flow type assembly structure or a spray head type assembly structure. This gas supply unit 7 is arranged to face the substrate holding device 4 and can form the reaction space R with the substrate holding device 4.

[0040] The base of this gas supply unit 7 may include a plurality of gas supply unit holes formed to eject a process gas (e.g., in a vertical direction). This gas supply unit 7 comprises a metallic material and can be used as an electrode during a plasma process. During this plasma process, a radio frequency (RF) power source may be electrically connected to this gas supply unit 7, which acts as an electrode. Specifically, an RF rod 12 connected to this RF power source may pass through a reactor wall and be connected to this gas supply unit 7. Alternatively, this RF rod 12 may be part of this gas supply unit 7. In this case, the substrate holding device 4 can be used as another electrode.

[0041] The substrate holding device 4 may include a base body for supporting a substrate and a heater for heating the substrate supported by the base body. For loading / unloading the substrate, the substrate holding device 4 may be configured to connect to a drive unit 13 provided on one side of the substrate holding device 4, thereby enabling vertical movement. The drive unit 13 may include a drive motor.

[0042] A telescopic portion 14 may be provided between the lower surface of the lower body 3 and the drive unit 13. The telescopic portion 14 may be provided between the lower surface of the lower body 3 and the drive unit 13 to isolate the lower space 11 from the outside.

[0043] The telescopic portion 14 can be stretched according to the movement of the substrate holding device 4. For example, the telescopic portion 14 may have a corrugated configuration (e.g., bellows). In this case, the telescopic portion 14 can retract when the substrate holding device 4 and the drive unit 13 are raised, and can expand when the substrate holding device 4 and the drive unit 13 are lowered.

[0044] The exhaust unit may include an exhaust port (not shown), an exhaust pipe 8, and an exhaust space 9 located in the exhaust pipe 8.

[0045] A step 15 facing the reaction space R can be formed in the lower part of this upper body 2. This step 15 may have an upper surface, a lower surface, and a side connecting the upper surface to the lower surface. The exhaust pipe 8 can be installed on the upper surface of the step 15. The gas supply unit 7 can be provided in an internal space surrounded by the exhaust pipe 8.

[0046] The control ring 5 surrounds the substrate holding device 4 and may be located between the substrate holding device 4 and the upper body 2. The control ring 5 may be positioned on the step 15 formed in the lower part of the upper body 2. Specifically, the control ring 5 may be positioned on the lower surface of the step 15. Furthermore, the control ring 5 may be positioned below the exhaust pipe 8. The control ring 5 may be generally annular, but is not limited to this. The control ring 5 may be fixed or movable relative to the upper body 2.

[0047] Since the control ring 5 is separate from and surrounds the substrate holding device 4, a gap G can exist between the control ring 5 and the substrate support device 4. The reaction space R and the lower space 11 can be connected to each other through this gap G.

[0048] This control ring 5 can be a flow control ring (FCR). This control ring 5 can control the pressure balance between the reaction space R and the lower space 11 of the substrate holding device 4 by adjusting the width of the gap G between the step 15 of the upper body 2 and the substrate holding device 4, and can control the exhaust flow rate by adjusting the distance between this control ring 5 and the lower surface of the exhaust pipe 8.

[0049] According to other embodiments, the control ring 5 may further include a stop at its lower surface. This stop prevents the control ring 15 from moving excessively toward the reactor wall. The stop may be located on the lower surface of the control ring 5.

[0050] Process gas introduced through a source / reaction gas inlet 6 can be supplied to the reaction space R and the substrate through the gas supply unit 7. The process gas supplied to the substrate can undergo a chemical reaction with the substrate or a chemical reaction between gases, and then a thin film is deposited or etched on the substrate.

[0051] Furthermore, a filler gas can be introduced into the lower space 11 through the filler gas inlet 10. This filler gas forms an air curtain in the gap G between the substrate holding device 4 and the control ring 5 to prevent gas in the reaction space R from flowing into the lower space 11 through the gap G. For example, the filler gas can be nitrogen or argon. Alternatively, if the discharge rate of a gas is lower than the discharge rate of the gas supplied to the reaction space R, the gas can be supplied to the lower space 11 through the filler gas inlet 10 to prevent parasitic plasma from forming in the lower space 11 when plasma is generated in the reaction space R.

[0052] In a plasma process, the upper RF power is supplied to the gas supply unit 7 via an RF generator, an RF pairer and the RF rod 12, and a reactive gas introduced into the reaction space R via the source / reactive gas inlet 6 can be activated to generate plasma.

[0053] In this reaction space R, residual or unreacted gases left after the chemical reaction with the substrate can be discharged to the outside through the exhaust space 9 in the exhaust pipe 8 and an exhaust pump (not shown). The exhaust method can be top exhaust or bottom exhaust.

[0054] However, although the filling gas introduced into the lower space 11 through the filling gas inlet 10 forms an air curtain in the gap G, due to fluctuations in the gas flow rate supplied during a substrate processing procedure, or fluctuations in the process pressure caused thereby, some source / reactant gases supplied to the reaction space R through the gas supply unit 7 may still penetrate into the lower space 11 through the gap G (arrow in Figure 1). Furthermore, some free radicals in the reaction space R can flow into the lower space 11 through the gap G. These source / reactant gases and / or free radicals penetrating into the lower space 11 in this manner can induce parasitic plasma in the lower space 11 during a subsequent plasma process.

[0055] Furthermore, when the gas supply unit 7 and the bottom of a chamber 16 face each other through the gap G, a potential difference may be formed, thereby activating a process gas and / or filling gas introduced into the lower space 11 to form parasitic plasma in the lower space 11.

[0056] When RF power is supplied to this reaction space R, and parasitic plasma is generated in a space outside this reaction space R (i.e., this lower space 11), the plasma capacity supplied to this substrate in this reaction space R and substantially promoting this reaction will be reduced by the amount of parasitic plasma generated, thereby leading to process failure.

[0057] Therefore, a method is needed to minimize the problem of gas in the reaction space R penetrating through the gap G into the lower space 11, and a method is needed to minimize the problem of parasitic plasma being generated in the lower space 11 when the gas supply unit 7 and the bottom of the chamber 16 face each other through the gap G, resulting in a potential difference.

[0058] Figure 2 is a view of a substrate processing apparatus according to an embodiment of the concept disclosed herein. Specifically, Figure 2 schematically shows a substrate processing apparatus that prevents gas in the reaction space R from penetrating through the gap G into the lower space 11. The embodiments will not be described again herein.

[0059] Unlike Figure 1, a protrusion 20 formed along the outer peripheral surface of the substrate holding device 4 is located in the lower part of the substrate holding device 4 in Figure 2. This protrusion 20 can extend from the side of the substrate holding device 4 to the lower part of the control ring 5. Specifically, this protrusion 20 can extend from the side of the substrate holding device 4 to the lower part of the control ring 5 across the gap G.

[0060] When in contact with the control ring 5, the height of the protrusion 20 may be less than, equal to or greater than the vertical distance d2 between the lower surface of the substrate holding device 4 and the lower surface of the control ring 5.

[0061] The radial width d1 of this protrusion 20 can be greater than or equal to the width A of this gap G. When the radial width d1 of this protrusion 20 is the same as the width A of this gap G, the boundary between the upper surface and the side surface of this protrusion 20 can contact the boundary between the side surface and the lower surface of this control ring 5. The contact point between this protrusion 20 and this control ring 5 will form a circular contact line along the upper surface of this protrusion 20. This contact line can be considered as a barrier to prevent the process gas in this reaction space R from penetrating into this lower space 11 through this gap G.

[0062] When the radial width d1 of the protrusion 20 is greater than the width A of the gap G, the protrusion 20 can contact the lower surface of the control ring 5. The contact point between the protrusion 20 and the control ring 5 will form an annular contact surface along the upper surface of the protrusion 20. This contact surface can be considered as a barrier to prevent the process gas in the reaction space R from penetrating into the lower space 11 through the gap G.

[0063] Thus, the protrusion 20 formed in the lower part of the substrate holding device 4 can act as a barrier, substantially preventing the process gas in the reaction space R from penetrating into the lower space 11 through the gap G. Furthermore, the protrusion 20 can also act as a barrier, substantially blocking the formation of a potential difference when the gas supply unit 7 and the bottom of the chamber 16 face each other through the gap G. Therefore, the protrusion 20 can prevent the generation of parasitic plasma in the lower space 11.

[0064] Depending on the type of substrate processing procedure, the height of the substrate holding device 4 and the width of the reaction space R can vary accordingly. Accordingly, in addition to the lower portion of the substrate holding device 4, the protrusion 20 can also be formed at any position on a surface, for example, on the side of the substrate holding device 4 facing the control ring 5. In this case, the radial width d1 of the protrusion 20 can be the same as the width A of the gap G, and the side of the protrusion 20 can contact the side of the control ring 5.

[0065] Figure 3 is a view of a substrate processing apparatus according to an embodiment of the concept disclosed herein, wherein the substrate processing apparatus is equipped with a blocking ring. Specifically, Figure 3 schematically shows a substrate processing apparatus including a blocking ring 30, which prevents the gas supply unit 7 and the chamber bottom 16 from facing each other through the gap G. The embodiments will not be described again herein.

[0066] Unlike Figure 1, the substrate processing apparatus in Figure 3 further includes this barrier ring 30, which is formed to surround the substrate holding device 4 below this gap G.

[0067] The barrier ring 30 can extend from the lower part of the substrate holding device 4 to the lower part of the control ring 5. In order to prevent the gas supply unit 7 and the bottom 16 of the chamber from facing each other through the gap G and forming a potential difference, the inner diameter (Db, inner) of the barrier ring 30 can be less than or equal to the outer diameter (Ds) of the substrate holding device 4, and the outer diameter (Db, outer) of the barrier ring 30 can be greater than or equal to the inner diameter (Dc, inner) of the control ring 5.

[0068] The barrier ring 30 may be generally circular, but is not limited to this. The barrier ring 30 may move within the lower space 11.

[0069] The upper surface of the barrier ring 30 may or may not contact the substrate holding device 4 and / or the control ring 5.

[0070] When the barrier ring 30 is not in contact with the substrate holding device 4 or the control ring 5, the reaction space R and the lower space 11 can communicate with each other through the gap G. In this case, the barrier ring 30 may not substantially prevent the process gas in the reaction space R from penetrating into the lower space 11 through the gap G, but when the gas supply unit 7 and the bottom of the chamber 16 face each other through the gap G, the barrier ring can act as a barrier to substantially block the formation of a potential difference. Accordingly, the barrier ring 30 can reduce the problem of parasitic plasma generation in the lower space 11 by activating the process gas and / or filling gas introduced into the lower space 11.

[0071] When the barrier ring 30 contacts the substrate holding device 4 and the control ring 5, it prevents the reaction space R and the lower space 11 from communicating with each other through the gap G. Specifically, when the upper surface of the barrier ring 30 contacts the lower surface of the substrate holding device 4 and the lower surface of the control ring 5, the contact surface between the barrier ring 30 and the substrate holding device 4 and the control ring 5 acts as a barrier to prevent process gas in the reaction space R from penetrating into the lower space 11 through the gap G. Simultaneously, when the gas supply unit 7 and the chamber bottom 16 face each other through the gap G, the barrier ring 30 acts as a barrier, substantially blocking the formation of a potential difference. Therefore, the barrier ring 30 prevents the generation of parasitic plasma in the lower space 11.

[0072] Figure 4 is a schematic diagram of a barrier ring according to an embodiment of the concept disclosed herein. Specifically, Figure 4 schematically shows an example of a barrier ring that can be used in the substrate processing apparatus of Figure 3. The embodiments will not be described again herein.

[0073] The barrier ring 30 may include a body 41. The body 41 of the barrier ring 30 may be generally annular, but is not limited thereto. As described above, in order to prevent the gas supply unit 7 and the bottom of the chamber 16 from facing each other through the gap G, the inner diameter (Db, inner) of the barrier ring 30 may be less than or equal to the outer diameter of the substrate holding device 4, and the outer diameter (Db, outer) of the barrier ring 30 may be greater than or equal to the inner diameter of the control ring 5.

[0074] In another embodiment, the upper surface of the barrier ring 30 (specifically, the upper surface of the body 41) may form a protrusion 42 surrounding the outer peripheral surface of the barrier ring 30. The inner diameter (Dp, inner) of the protrusion 42 may be greater than or equal to the outer diameter of the substrate holding device 4.

[0075] The upper surfaces of the barrier ring 30 and the protrusion 42 can form a step, which has an upper surface, a lower surface and a side surface connecting the upper surface to the lower surface. As will be described later with reference to Figure 5, the upper surface of the step (i.e., the upper surface of the protrusion 42) can contact the lower surface of the control ring 5, and the lower surface of the step (i.e., the upper surface of the body 41) can contact the lower surface of the substrate holding device 4.

[0076] As described subsequently with reference to Figure 5, the width w of the protrusion 42 may be greater than or equal to the width of the gap, and the height of the protrusion 42 may be equal to the vertical distance between the lower surface of the substrate holding device 4 and the lower surface of the control ring 5.

[0077] Figure 5 is a schematic diagram of a substrate processing apparatus equipped with the barrier ring shown in Figure 4. Specifically, Figure 5 shows the state in which the barrier ring 30 of Figure 4 contacts the lower surface of the substrate holding device 4 and the lower surface of the control ring 5.

[0078] As described above, the inner diameter (Db, inner) of the barrier ring 30 can be configured to be less than or equal to the outer diameter of the substrate holding device 4, and the inner diameter (Dp, inner) of the protrusion 42 can be configured to be greater than or equal to the outer diameter of the substrate holding device 4. Therefore, a periphery of the lower surface of the substrate holding device 4 can contact the lower surface of the step of the barrier ring 30.

[0079] When the inner diameter (Dp, inner) of the protrusion 42 is the same as the outer diameter of the substrate holding device 4, the junction between the side surface and the lower surface of the step of the barrier ring 30 can contact the junction between the side surface and the lower surface of the substrate holding device 4. That is, the junction between the side surface and the lower surface of the substrate holding device 4 is in close contact with the step of the barrier ring 30, thereby fixing the position of the barrier ring 30.

[0080] The width w of the protrusion 42 can be configured to be greater than or equal to the width A of the gap, and the height h1 of the protrusion 42 can be configured to be equal to the vertical distance between the lower surface of the substrate holding device 4 and the lower surface of the control ring 5. Therefore, a periphery of the lower surface of the control ring 5 can contact the upper surface of the step of the barrier ring 30 (i.e., the protrusion 42) and can prevent the process gas in the reaction space R from penetrating into the lower space 11 through the gap G.

[0081] The side of the step of the barrier ring 30 may have a structure SH that slopes towards the lower surface of the step. This sloped structure provides a self-aligning function, allowing the barrier ring 30 to be accurately positioned when it is raised and in contact with the lower surface of the substrate holder 4. In another embodiment, corresponding to the sloped structure SH of the step of the barrier ring 30, the lower edge of the substrate holder 4 may have a chamfered or sloped structure or a non-right-angled structure with a radius of curvature. This further enhances the self-aligning function of the barrier ring 30 relative to the substrate holder 4.

[0082] As shown in Figure 5, when the barrier ring 30 contacts the substrate holding device 4 and the control ring 5, the barrier ring 30 prevents the reaction space R and the lower space 11 from communicating with each other through the gap G. Specifically, when the lower surface of the step of the barrier ring 30 contacts the lower surface of the substrate holding device 4, and the upper surface of the step of the barrier ring 30 contacts the lower surface of the control ring 5, the contact surface between the barrier ring 30 and the substrate holding device 4 and the control ring 5 acts as a barrier to prevent process gas in the reaction space R from penetrating into the lower space 11 through the gap G. Simultaneously, when the gas supply unit 7 and the chamber bottom 16 face each other through the gap G, the barrier ring 30 acts as a barrier to substantially block the formation of a potential difference. Accordingly, the barrier ring 30 prevents the generation of parasitic plasma in the lower space 11.

[0083] That is, when the barrier ring 30 is constructed using the outer diameter of the substrate holding device 4, the inner diameter of the control ring 5, and the vertical distance between the lower surface of the substrate holding device 4 and the lower surface of the control ring 5, the problem of parasitic plasma generation in the lower space 11 can be prevented.

[0084] Figure 6 is a schematic diagram of a barrier ring according to an embodiment of the concept disclosed herein. The embodiments will not be described again herein.

[0085] In addition to the barrier ring 30 in Figure 4, the barrier ring 60 in Figure 6 may include one or more extensions. Figure 6 shows that the barrier ring 60 includes three extensions (a first extension 61a, a second extension 61b and a third extension 61c), but is not limited thereto, and may include any number of extensions.

[0086] The first, second, and third extensions 61a, 61b, and 61c extend from an inner circumferential surface of the barrier ring 60 toward the center of the barrier ring 60. The lengths of these extensions 61a, 61b, and 61c may be less than the radius of the barrier ring 60. These first, second, and third extensions 61a, 61b, and 61c maintain the position and alignment of the barrier ring 60 relative to the lower surface of the substrate holding device 4, as described with reference to Figures 7 through 9.

[0087] The first, second, and third extensions 61a, 61b, and 61c may each include a plurality of through holes 62a, 62b, and 62c through which the substrate support pin can pass. In order to allow the substrate support pin to move smoothly vertically, the inner diameter of these through holes 62a, 62b, and 62c may be larger than the diameter of the substrate support pin.

[0088] Figure 7 is a cross-sectional view of a substrate processing apparatus equipped with the barrier ring shown in Figure 6. The embodiments will not be described again herein.

[0089] Referring to Figure 7, the substrate holding device 4 may include one or more pin holes 82 through which the substrate support pin 72 can pass. The substrate support pin 72 can pass through one of the pin holes 82 of the substrate holding device 4 and one of the corresponding through holes 62a, 62b and 62c of the barrier ring 60. The position and alignment of the barrier ring 60 relative to the lower surface of the substrate holding device 4 can be maintained by the substrate support pin 72.

[0090] As shown in Figure 7, when the outer diameter of the barrier ring 60 is larger than the outer diameter of the substrate holding device 4, and the inner diameter of the protrusion 42 is the same as the outer diameter of the substrate holding device 4, the junction between the side surface and the lower surface of the step (protrusion) of the barrier ring 60 can contact the junction between the side surface and the lower surface of the substrate holding device 4. That is, the junction between the side surface and the lower surface of the substrate holding device 4 can closely contact the step of the barrier ring 60, and the position of the barrier ring 60 can be fixed due to the protrusion 42.

[0091] Figures 8 and 9 are a rear view and a cross-sectional view of a substrate holding device, respectively, wherein the barrier ring and the substrate support pin in Figure 6 are disposed on the substrate holding device. The embodiments will not be described again herein.

[0092] As shown in Figures 8 and 9, the bushing 87 has a hollow hole through which the substrate support pin 72 can pass, and the bushing 87 can be inserted into the pin hole 82 of the substrate holding device 4. The length of the bushing 87 is greater than the thickness of the substrate holding device 4, so that the bushing 87 can pass through the substrate holding device 4 and extend further downward than the substrate holding device 4. The bushing 87 can pass through the pin hole 82 of the substrate holding device 4 and through a through hole 62 in one extension 61 of the barrier ring 60.

[0093] The substrate support pin 72 can be inserted into a hollow area of ​​the bushing 87 and can move vertically in this hole by a substrate support pin driver (not shown) to load / unload a substrate. In order to allow the substrate support pin 72 to move smoothly and vertically, the inner diameter of the bushing 87 can be larger than the diameter of the substrate support pin 72.

[0094] In another embodiment, a thread 88 may be formed on the lower outer surface of the bushing 87, which can be fastened by a nut 85. The extension 61 of the barrier ring 60 may be disposed between the substrate holding device 4 and the thread 88, and this position may be fixed by tightening the thread 88 and the nut 85.

[0095] In another embodiment, the extension 61 may include at least one elastic body 86 located on the upper surface of the extension 61. The elastic body 86 may be disposed between the substrate holding device 4 and the extension 61 of the barrier ring 60. The elastic body 86 may be, for example, a spring, a leaf spring, and a fluid or gas, and may be implemented by a combination thereof. In another embodiment, the elastic body 86 may be disposed on the lower surface of the extension 60, for example, between the extension 61 of the barrier ring 60 and the nut 85.

[0096] In Figures 8 and 9, the barrier ring 60 is secured to the lower surface of the substrate holding device 4 by the bushing 87 and the nut 85. When the substrate holding device 4 is raised and contacts the barrier ring 60 and the control ring 5 (Figure 5), the elastomer 86 can mitigate the impact acting on the barrier ring 60, the substrate support device 4, and the control ring 5. Furthermore, damage to the device due to impacts acting on the barrier ring 60, the control ring 5, and the substrate holding device 4 can be minimized, and the generation of contaminants such as particulate matter that may result from such damage can be minimized. By appropriately selecting the position of the elastomer 86, the impacts on these components can be more effectively controlled. For example, the elastomer 86 can be located on the upper surface (i.e., the protrusion), lower surface (i.e., the body), and side surface of the step of the barrier ring 60, and at least one of the upper surface or lower surface of the extension 61. Furthermore, this elastomer 86 can increase the adhesion between the barrier ring 60, the substrate holding device 4, the bushing 87 (especially the thread 88) and the nut 85.

[0097] Figure 10 is a view of a substrate processing apparatus according to an embodiment of the concept disclosed herein, wherein the substrate processing apparatus includes two or more reactors. The embodiments will not be described again herein.

[0098] Although Figures 1 through 3 and 5 illustrate a substrate processing apparatus including a reactor 1, the object of this disclosure is not limited to a single reactor for processing a single substrate. In some instances, this disclosure can be used in batch reactors (i.e., multiple reactors) that process multiple substrates at a time, as shown in Figure 10. In the case of a chamber comprising multiple reactors, the reactors 1 in this chamber may share the lower space 11 of the substrate holding device 4.

[0099] Figure 11 is a schematic diagram of a substrate processing apparatus according to other embodiments of the concepts disclosed herein. Specifically, Figure 11 schematically shows a substrate processing apparatus in which a barrier ring support 110 is arranged. To facilitate understanding of the diagram, it can be noted that the barrier rings(s) 30 and 60 in Figure 11 are presented as straight lines rather than their original cross-sectional shapes.

[0100] Unlike the reactor configurations shown in Figures 1, 2, 3, and 5, in Figure 11, the barrier ring support 110 can be arranged in the lower space 11. Specifically, the barrier ring support 110 can be installed on the bottom 16 of the chamber. The barrier rings 30 and 60 can be placed on the barrier ring support 110.

[0101] The barrier rings 30 and 60 can be raised to the lower surface of the substrate holding device 4 by a transfer arm (not shown) at the beginning of a substrate processing procedure, and can be placed back on the barrier ring support 110 by the transfer arm after the substrate processing procedure is completed.

[0102] Figure 12(a) shows an example of this barrier ring support 110, which can be used in the substrate processing apparatus of Figure 11, and Figure 12(b) schematically shows a top view of the barrier rings 30 and 60 located on this barrier ring support 110. The embodiments will not be described again in this document.

[0103] As shown in Figure 12, the top of the barrier ring support 110 may include a seat portion 111, on which the barrier rings 30 and 60 may be placed. The radial length of the seat portion 111 may be greater than or equal to the radial length of the barrier rings 30 and 60. The distance between the substantial center of the plurality of seat portions 111 and the junction of the seat portion 111 and the guide portion 112 of the barrier ring support 110 may be less than or equal to the inner diameter of the barrier rings 30 and 60.

[0104] The barrier ring support 110 may further include a guide 112 for maintaining the positions of the barrier rings 30 and 60.

[0105] The seat portion 111 and the guide portion 112 can form a step. The junction between the side surface and the lower surface of the barrier rings 30 and 60 can closely contact the step of the barrier ring support 110 (especially the junction between the seat portion 111 and the guide portion 112), and the barrier rings 30 and 60 can be aligned or fixed to the barrier ring support 110.

[0106] As shown in Figure 12(a), the guide portion 112 may have a shape that is inclined at an angle of 90 degrees or higher relative to the seat portion 111. That is, the barrier ring support 110 may have a step with an inclined structure. This configuration provides a self-aligning function, so that the barrier rings 30 and 60 can be accurately positioned when the barrier rings 30 and 60 are lowered and placed on the barrier ring support 110.

[0107] In Figure 12(b), this barrier ring support 110 is shown to have a three seating-guide portions set, but this disclosure is not limited thereto. For example, this barrier ring support 110 may have four seating portions.

[0108] Figures 13A and 13B schematically show the barrier rings 30 and 60 moving in a vertical direction via a conveyor arm 1300. Although these barrier rings 30 and 60 typically have a ring structure, for the sake of understanding the figures, it can be noted that the barrier rings 30 and 60 in Figures 13A and 13B are presented as straight lines rather than their original cross-sectional shapes. The embodiments will not be described again herein.

[0109] As shown in Figures 13A and 13B, this substrate processing apparatus may further include a transfer arm 1300 for transferring the barrier rings 30 and 60.

[0110] The conveyor arm 1300 can be connected to a moving mechanism, such as a rotating shaft (not shown), and can rotate. In other embodiments, the conveyor arm 1300 can be connected to a lifting shaft and can move up and down. The rotating shaft can be rotated by a rotary motor (not shown) and lifted by a lifting motor (not shown), thereby realizing the rotation / lifting movement of the conveyor arm 1300.

[0111] The transfer arm 1300 is configured to elevate the barrier rings 30 and 60 such that at the start of a substrate processing procedure, the upper surfaces of the barrier rings 30 and 60 contact the lower surfaces of the substrate holding device 4 and the control ring 5 (see Figure 13A). During the ascent of the barrier rings 30 and 60, they are supported by the transfer arm 1300. When the upper surfaces of the barrier rings 30 and 60 contact the lower surfaces of the substrate holding device 4 and the control ring 5, the reaction space R and the lower space 11 may not be connected to each other via the gap G.

[0112] The transfer arm 1300 can be configured to lower the barrier rings 30 and 60 after the substrate processing is completed, so that the barrier rings 30 and 60 are placed on the barrier ring support 110 (see Figure 13B). During the lowering of the barrier rings 30 and 60, the barrier rings 30 and 60 can be supported by the transfer arm 1300. During the lowering of the barrier rings 30 and 60, that is, when the barrier rings 30 and 60 are no longer in contact with the lower surface of the substrate holding device 4 and the control ring 5, the reaction space R and the lower space 11 can be connected to each other through the gap G.

[0113] As can be seen from Figures 13A and 13B, the barrier rings 30 and 60 can move independently in the vertical direction outside the substrate holding device 4, and can move using the transfer arm 1300 without the need for a separate additional device.

[0114] Figure 14 is a perspective view of a chamber 1400 according to an embodiment of the concept disclosed herein, wherein the chamber includes two or more reactors. Specifically, Figure 14 shows a perspective view of a chamber 1400 including the four reactors shown in Figures 11 and / or 13. In Figure 14, the depiction of the substrate holding device is omitted to facilitate understanding of the drawings. The embodiments will not be described again herein.

[0115] As shown in Figure 14, the barrier ring support 110 is disposed in the lower space of each reactor, and the barrier rings 30 and 60 are disposed on each barrier ring support 110. A rotating shaft 1401 can be disposed between these barrier rings 30 and 60. This rotating shaft can be rotated by a rotary motor (not shown) and can be raised and lowered by a lifting motor (not shown). The conveyor arm 1300 can be connected to this rotating shaft 1401 to realize the rotation / lifting movement.

[0116] Figures 15A and 15B show the arrangement of a barrier ring and a conveyor arm before and after substrate processing in a chamber as shown in Figure 14. In Figures 15A and 15B, for ease of understanding, the gas supply unit, the upper body of the reactor, and the top cover of the chamber are omitted. However, unlike Figure 14, Figures 15A and 15B show the substrate holding device 4. The embodiments will not be described again herein.

[0117] During a substrate processing procedure, as shown in Figure 15A, the barrier rings 30 and 60 are supported by the transfer arm 1300 and moved upward to the lower surface of the substrate holding device 4. In this case, as shown in Figure 13A, the barrier rings 30 and 60 can substantially block a gap between the substrate holding device 4, a control ring 5, and a lower space. Therefore, during this substrate processing procedure, gas flowing into a reaction space is not introduced into the lower space 11 due to the barrier rings 30 and 60.

[0118] Figure 15B illustrates a cavity in a state of loading a substrate before processing it, unloading a substrate after processing it, or in an idling state. The barrier rings 30 and 60 are positioned on a barrier ring support by the downward movement of the transfer arm 1300, which can be positioned in a space between the reactors, i.e., between the barrier rings 30 and 60. As shown in Figure 15B, the substrate holding device 4 can also be lowered for substrate loading / unloading.

[0119] Figure 16 shows a flowchart of a substrate processing method using a substrate processing apparatus according to an embodiment of the present disclosure. The embodiments will not be described again herein.

[0120] First, operation S1601 can be performed to lower a substrate holding device (e.g., 4 in Figure 13). This substrate holding device can be configured to move vertically by means of a drive unit (e.g., 13 in Figure 13) provided on one side of this substrate holding device.

[0121] Subsequently, an operation S1602 can be performed by a substrate transfer mechanism to load a substrate into the substrate holding device. This substrate transfer mechanism can be the same as the transfer arm 1300 or can be a separate device.

[0122] Subsequently, operation S1603 can be performed to raise the substrate holding device. The substrate holding device can be raised by a drive unit (e.g., a drive motor).

[0123] Subsequently, an operation S1604 can be performed to raise a blocking ring (e.g., 30 and 60 in Figure 13). This blocking ring can be supported by a transfer arm (e.g., 1300 in Figure 13) and can be raised. In order to physically block the gap between the substrate holding device, the control ring and the lower space, the transfer arm can raise the blocking ring to the lower surface of the substrate holding device, so that the upper surface of the blocking ring contacts the lower surface of the substrate holding device and the lower surface of the control ring.

[0124] Subsequently, operation S1605, which involves performing a substrate processing procedure, can be performed. During this substrate processing procedure, because the barrier ring substantially blocks the gap between the substrate holding device and the control ring and the lower space, the gas flowing into the reaction space may not flow into the lower space.

[0125] After the substrate processing procedure is completed, the operation of lowering the barrier ring S1606 can be performed. The barrier ring can be supported by the transfer arm and can be lowered. When the barrier ring is lowered and no longer in contact with the substrate holding device and the control ring, the reaction space and the lower space can communicate with each other through this gap. In another embodiment, when the substrate processing apparatus further includes a barrier ring support (e.g., 110 in Figure 13) disposed in the lower space, the operation of lowering the barrier ring S1606 can further include placing the barrier ring on the barrier ring support. That is, the transfer arm can lower the barrier ring to place it on the barrier ring support.

[0126] Subsequently, operation S1607 can be performed to lower the substrate holding device. The substrate holding device can be lowered by a drive unit (e.g., a drive motor).

[0127] Finally, the substrate can be unloaded using the substrate transfer mechanism, operation S1608.

[0128] According to a substrate processing apparatus and a substrate processing method according to an embodiment of the present disclosure, a process gas can be prevented from penetrating into a space outside the reaction space (e.g., the space below the reactor) during plasma processing due to fluctuations in pressure or gas flow rate within the reaction space. Therefore, the generation of parasitic plasma caused by the process gas penetrating into the space outside the reaction space can be substantially prevented, as this is due to a potential difference formed between a gas supply unit and a lower surface (or chamber bottom) of the reactor. Furthermore, by preventing the gas supply unit and the lower surface (or chamber bottom) of the reactor from directly facing each other through a gap between a substrate holding device and a control ring, a potential difference between the gas supply unit and the lower surface of the reactor can be prevented, and the generation of parasitic plasma in the space below the reactor can be prevented.

[0129] The foregoing provides several embodiments and representative advantages of a substrate processing apparatus capable of suppressing parasitic plasma generation. For the sake of brevity, only a limited number of combinations of relevant features are described. However, it should be understood that features of any instance can be combined with features of any other instance. Furthermore, it should be understood that these advantages are non-limiting, and no particular advantage is specified or required in any particular exemplary embodiment.

[0130] It should be understood that the shapes of each part in the accompanying drawings are for illustrative purposes, in order to provide a clearer understanding of this disclosure. It should be noted that some parts can be modified into various shapes different from those shown.

[0131] The disclosure described above is not limited to the embodiments and accompanying drawings. Those skilled in the art will readily understand that various substitutions, modifications and alterations can be made without departing from the spirit of this disclosure.

[0132] According to one embodiment, the occurrence of parasitic plasma in a space outside a reaction space can be minimized.

[0133] According to one embodiment, a process gas in this reaction space can be physically prevented from penetrating into spaces outside this reaction space due to changes in gas flow rate or process pressure.

[0134] It should be understood that the embodiments described herein are to be regarded as illustrative only and not as limiting. The description of various features or styles in the embodiments should generally be regarded as other similar features or styles that can be used in other embodiments. Although one or more embodiments have been described with reference to drawings, those skilled in the art will understand that various changes in form and detail may be made therein without departing from the spirit and scope of this disclosure as defined by the following claims.

[0135] 1: Reactor

[0136] 2: Upper body

[0137] 3: Lower Body

[0138] 4:Substrate holding device

[0139] 5: Control Loop

[0140] 6: Source / Reaction Gas Inlet

[0141] 7: Gas Supply Unit

[0142] 8: Exhaust pipe

[0143] 9: Exhaust space

[0144] 10: Filling gas inlet

[0145] 11: Bottom Space

[0146] 12: RF rod

[0147] 13: Drive Unit

[0148] 14: Telescopic section

[0149] 15: Steps

[0150] 16: Bottom of the chamber

[0151] 20:convex part

[0152] 30: Barrier Ring

[0153] 41:Ontology

[0154] 42:convex part

[0155] 60: Barrier Ring

[0156] 61: Extension

[0157] 61a: First extension

[0158] 61b: Second extension

[0159] 61c: Third extension

[0160] 62, 62a, 62b, 62c: Perforation

[0161] 72: Substrate support pin

[0162] 82: Pin Hole

[0163] 85: Nut

[0164] 86: Elastomer

[0165] 87: Bushing

[0166] 88: Thread

[0167] 110: Barrier Ring Support

[0168] 111: Seating Section

[0169] 112: Guidance Department

[0170] 1300: Conveyor Arm

[0171] 1400: Chamber

[0172] 1401: Rotary shaft

[0173] A: Width

[0174] d1: Radial width

[0175] d2: Vertical distance

[0176] Db, inner: inner diameter

[0177] Db, outer: outer diameter

[0178] Dc, inner: inner diameter

[0179] Dp, inner: inner diameter

[0180] Ds: Outer diameter

[0181] G: Gap

[0182] h1: Height

[0183] R: Reaction space

[0184] SH: Inclined structure

[0185] w: width

[0186] S1601, S1602, S1603, S1604, S1605, S1606, S1607, S1608: Operation

Claims

1. A substrate processing apparatus comprising one or more reactors, wherein each reactor comprises: The main body; A substrate holding device; a control ring surrounding the substrate holding device and disposed on a step formed in an upper body, wherein a gap exists between the control ring and the substrate holding device; and a barrier ring formed below the gap surrounding the substrate holding device, wherein the upper body and the substrate holding device form a reaction space, a lower region of the substrate holding device forms a lower space, the reaction space and the lower space communicate with each other through the gap, and an inner diameter of the barrier ring is less than or equal to an outer diameter of the substrate holding device, while an outer diameter of the barrier ring is greater than or equal to an inner diameter of the control ring, the barrier ring including one or more extensions extending from the inner circumferential surface of the barrier ring toward the center of the barrier ring, and the one or more extensions including a through hole through which a substrate support pin passes.

2. The substrate processing apparatus of claim 1, wherein an upper surface of the barrier ring contacts a lower surface of the substrate holding device and a lower surface of the control ring to prevent the reaction space from communicating with the lower space through the gap.

3. The substrate processing apparatus of claim 2, wherein a protrusion is formed around an outer peripheral surface of the barrier ring and on the upper surface of the barrier ring, an inner diameter of the protrusion is greater than or equal to the outer diameter of the substrate holding device, a height of the protrusion is equal to a vertical distance between the lower surface of the substrate holding device and the lower surface of the control ring, the upper surface of the barrier ring and the protrusion form a step, the step having an upper surface, a lower surface and a side surface connecting the upper surface to the lower surface, and the upper surface of the step contacts the lower surface of the control ring, and the lower surface of the step contacts the lower surface of the substrate holding device.

4. The substrate processing apparatus of claim 3, wherein the side of the step has a structure that is inclined toward the lower surface of the step.

5. The substrate processing apparatus of claim 3, wherein the inner diameter of the protrusion is the same as the outer diameter of the substrate holding device, and the boundary between the side surface of the step and the lower surface contacts the boundary between the side surface and the lower surface of the substrate holding device.

6. The substrate processing apparatus of claim 5, wherein the width of the protrusion is greater than or equal to the width of the gap.

7. The substrate processing apparatus of claim 1, wherein the substrate holding device includes a pin hole through which the substrate support pin passes, wherein a bushing has a hollow hole through which the substrate support pin passes, and the bushing is inserted into the pin hole of the substrate holding device, and the length of the bushing is greater than a thickness of the substrate holding device.

8. The substrate processing apparatus of claim 7, wherein the bushing passes through the through hole of the extension, a thread is formed on the lower part of the bushing, the thread is secured by a nut, and the one or more extensions are located between the substrate holding device and the thread.

9. The substrate processing apparatus of claim 8, wherein the one or more extensions include at least one elastomer located on at least one of the upper surface and the lower surface of the extension.

10. The substrate processing apparatus of claim 3, wherein the barrier ring includes one or more elastomers located on at least one of the upper surface, the lower surface and the side surface of the step.

11. The substrate processing apparatus of claim 1 further includes: A barrier ring support is arranged in the lower space; And a transfer arm configured to move the barrier ring.

12. The substrate processing apparatus of claim 11, wherein the transfer arm is configured to raise the barrier ring at the beginning of the substrate processing procedure such that the upper surface of the barrier ring contacts the lower surface of the substrate holding device and the lower surface of the control ring, and to lower the barrier ring after the substrate processing procedure is completed, so as to place the barrier ring on the barrier ring support.

13. The substrate processing apparatus of claim 12, wherein the barrier ring support includes a step having an inclined structure.

14. A substrate processing apparatus comprising one or more reactors, wherein each reactor comprises: The main body; A substrate holding device, wherein a lower region of the substrate holding device forms a lower space; a control ring, which is separate from the substrate holding device, surrounds the substrate holding device, and is disposed on a step formed on the upper body. A barrier ring support is arranged in the lower space; and a transfer arm is configured to transfer the barrier ring, wherein a protrusion is formed along the outer peripheral surface of one of the substrate holding devices in a lower part of the substrate holding device, and the protrusion extends from one side of the substrate holding device to a lower part of one of the control rings.

15. The substrate processing apparatus of claim 14, wherein the protrusion contacts the lower surface of the control ring.

16. A substrate processing method utilizing the substrate processing apparatus of claim 1, the substrate processing method comprising: Lower the substrate holding device; A substrate is loaded into the substrate holding device; Raise the substrate holding device; Raise the barrier ring so that an upper surface of the barrier ring contacts a lower surface of the substrate holding device and a lower surface of the control ring; execute a substrate processing procedure; lower the barrier ring; lower the substrate holding device; and unload the substrate.

17. The substrate processing method as described in claim 16, wherein, When the barrier ring does not contact the lower surface of the substrate holding device and the control ring, the reaction space and the lower space are connected to each other through the gap, and when the barrier ring contacts the lower surface of the substrate holding device and the control ring, the reaction space and the lower space are not connected to each other.

18. The substrate processing method as described in claim 16, wherein, During the substrate processing procedure, the gas introduced into the reaction space is prevented from flowing into the lower space by the barrier ring.

19. The substrate processing method of claim 16, wherein the substrate processing apparatus further comprises: A barrier ring support is arranged in the lower space; And a transfer arm configured to move the barrier ring, wherein lowering the barrier ring includes placing the barrier ring on the barrier ring support by means of the transfer arm.

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