Compact in-situ gas separator for substrate processing systems

Abstract

The gas separator includes a first distillation chamber and an evaporation chamber. A first liquid valve includes an inlet in fluid communication with the first distillation chamber and an outlet in fluid communication with the evaporation chamber. A cooler is configured to cool the first distillation chamber to a first temperature and the evaporation chamber to a second temperature different from the first temperature. The gas separator operates in a first mode, during which a gas mixture is received by the first distillation chamber, the gas mixture is separated into a first condensate and a first separated gas mixture, and the separated gas mixture is output from the first distillation chamber. In a second mode, the first liquid valve transfers the first condensate to the evaporation chamber, while the first distillation chamber neither receives the gas mixture nor supplies the first separated gas.

Description

Technical Field

[0001] This disclosure relates to a substrate processing system, and more particularly to a gas separator for processing gases used in a substrate processing system. Prior Technology

[0002] The prior art description provided herein is intended to provide a general overview of the content of this disclosure. The achievements of the inventors listed in this case, as well as the embodiments of the specification that were not qualified as prior art at the time of application, described in this prior art section are all implicitly or implicitly acknowledged as prior art relative to the content of this disclosure.

[0003] Substrate processing systems can be used to perform deposition, etching, and / or other processing on substrates (e.g., semiconductor wafers). The substrate may be disposed on a pedestal within a processing chamber. During deposition, a deposition gas mixture containing one or more precursors is supplied to the processing chamber. During etching, an etching gas mixture is supplied to the processing chamber. In some applications, plasma can be excited within the processing chamber to facilitate chemical reactions.

[0004] Several gases used as precursors during substrate processing (e.g., acetylene (C₂H₂)) are unstable in their pure form. Therefore, these gases can be supplied using a liquid solvent in a pressurized cylinder. For example, a mixture of acetylene and liquid acetone can be supplied to the pressurized cylinder. As the pressurized cylinder is consumed, the concentration of acetone supplied increases. However, it is important for the precursor gases to have constant properties during delivery to the processing chamber to maintain substrate homogeneity during the processing of multiple substrates.

[0005] Before use in the process, gas separation can be performed to separate mixtures. For example, gas separation can be used to separate acetylene and acetone. Several methods exist for performing gas separation / purification. In a first method, the gas bubbling system operates at a predetermined temperature to establish a controlled humidity environment for acetone concentration. This method is relatively compact and provides a closed-loop system solution requiring relatively infrequent maintenance (~every 6-8 months). Disadvantages of this method include the need to contain a relatively large amount of liquid within the system and move it throughout the system. The system requires careful consideration of the inlet gas concentration and is sensitive to changes in inlet pressure. For high-volume processes, the minimum output concentration is often not low enough.

[0006] In another method, the inlet gas is cooled to liquid distillation temperature in two stages, and then the gas passes through a tortuous cooling medium to separate the condensate. This method requires more floor space in the manufacturing chamber and is typically installed in a row of gas cabinets in an auxiliary manufacturing chamber not near the tools. This system is sensitive to inlet gas quality, has much shorter maintenance intervals (1-3 months), and requires manual handling of the separated fluids. Because this system operates at a cooler temperature, it can achieve a high level of gas purity. Summary of the Invention

[0007] A gas separator for a substrate processing system includes a first distillation chamber and an evaporation chamber. A first liquid valve includes an inlet in fluid communication with the first distillation chamber and an outlet in fluid communication with the evaporation chamber. A cooler is configured to cool the first distillation chamber to a first temperature and the evaporation chamber to a second temperature different from the first temperature. In a first mode, the first distillation chamber is configured to receive a gas mixture containing N gases (where N is an integer greater than 1) at its inlet; separate the gas mixture into a first condensate and a first separated gas mixture by condensing at least one of the N gases; store the first condensate in the first distillation chamber and supply the first separated gas mixture at a first outlet of the first distillation chamber. In a second mode, the first liquid valve transfers the first condensate from a second outlet of the first distillation chamber to the evaporation chamber, while the first distillation chamber does not receive the gas mixture through its inlet and does not supply the first separated gas mixture through its first outlet.

[0008] In some embodiments, a first separated gas mixture is supplied to a processing chamber. A second distillation chamber is configured to receive the first separated gas mixture from the first distillation chamber via a first inlet of the first distillation chamber. A second liquid valve includes an inlet in fluid communication with the second distillation chamber.

[0009] In some embodiments, during a first mode of the second distillation chamber, the second distillation chamber is configured to receive a first separated gas mixture at a first inlet, separate the first separated gas mixture into a second condensate and a second separated gas mixture by condensing another of the N gases, store the second condensate in the second distillation chamber, and supply the second separated gas mixture at a first outlet of the second distillation chamber. During a second mode of the second distillation chamber, a second liquid valve supplies the second condensate from a second outlet of the second distillation chamber to an evaporation chamber, while the second distillation chamber neither receives the first separated gas mixture through its first inlet nor supplies the second separated gas mixture through its first outlet.

[0010] In some embodiments, the first distillation chamber includes a body that defines a tortuous path, a cavity, and a channel. The tortuous path includes an inlet for receiving a gas mixture and in fluid communication with the inlet of the first distillation chamber, and an outlet for supplying a first condensate and a first separated gas mixture to the cavity. The channel fluidly connects the cavity to a first outlet of the first distillation chamber.

[0011] In some embodiments, the first distillation chamber is constructed from a solid block of a processed material, including stainless steel. The cooler includes a first cooling member comprising a channel configured to receive fluid; and a first Peltier device comprising a first side in thermal communication with the first cooling member. A heat transfer member is in thermal communication with a second side of the first Peltier device and the evaporation chamber. A second Peltier device comprises a first side in thermal communication with the heat transfer member and a second side in thermal communication with the first distillation chamber. The gas mixture comprises acetylene and acetone.

[0012] The gas delivery system includes a gas tank that houses a gas separator. The emission reduction system is in fluid communication with the gas tank and is configured to vent the gas tank during gas separator operation.

[0013] The system comprises N gas separators (where N is an integer greater than 1) and M processing chambers (where M is an integer greater than 0). A plurality of valve systems are configured to connect any one of the N gas separators to any one or more of the M processing chambers.

[0014] A gas separator for a substrate processing system includes a distillation chamber configured to operate in a first mode and a second mode; and an evaporation chamber. A first liquid valve includes an inlet in fluid communication with the distillation chamber and an outlet in fluid communication with the evaporation chamber. A first cooler is configured to be in thermal communication with a first side surface of the distillation chamber and the evaporation chamber. The first cooler includes a first cooling member including a passage configured to receive fluid; a first Peltier device including a first side in thermal communication with the first cooling member; a heat transfer member in thermal communication with a second side of the first Peltier device and the evaporation chamber; and a second Peltier device including a first side in thermal communication with the first cooling member and a second side in thermal communication with the distillation chamber.

[0015] In some embodiments, the second cooler includes a second cooling member having a channel configured to receive fluid; a third Peltier device having a first side in thermal communication with the second cooling member; a heat transfer member having a second side in thermal communication with the third Peltier device and an evaporation chamber; and a fourth Peltier device having a first side in thermal communication with the heat transfer member and a second side in thermal communication with a distillation chamber.

[0016] In some embodiments, the second cooler is configured to be in thermal communication with the second side surface of the distillation chamber and the second side surface of the evaporation chamber. The gas separator operates in a batch mode that includes a supply mode and a liquid movement mode.

[0017] In some embodiments, during a first mode, the distillation chamber is configured to receive a gas mixture containing N gases (where N is an integer greater than 1) at its inlet, separate the gas mixture into a condensate and a first separated gas mixture by condensing at least one of the N gases, store the condensate in the distillation chamber, and supply the first separated gas mixture to a first outlet of the distillation chamber. During a second mode, a first liquid valve supplies the condensate stored in the distillation chamber from a second outlet of the distillation chamber to an evaporation chamber, while the distillation chamber does not receive the gas mixture via its inlet and does not supply the first separated gas mixture via its first outlet.

[0018] In some embodiments, the distillation chamber includes a body defining a tortuous path, a cavity, and a channel. The tortuous path includes an inlet in fluid communication with the inlet of the distillation chamber for receiving a gas mixture, and an outlet for supplying condensate and a first separated gas mixture to the cavity. The channel connects the cavity to a first outlet of the distillation chamber.

[0019] In some embodiments, the tortuous path has a spiral shape. The system of the distillation chamber is made of a solid block of a processed material. This material includes stainless steel. The gas mixture includes acetylene and acetone.

[0020] The gas delivery system includes a gas tank that houses a gas separator. The emission reduction system is in fluid communication with the gas tank and is configured to vent the gas tank during gas separator operation.

[0021] The system comprises N gas separators (where N is an integer greater than 1) and M processing chambers (where M is an integer greater than 0). A plurality of valve systems are configured to connect any one of the N gas separators to any one or more of the M processing chambers.

[0022] Further applications of this disclosure will become apparent from the embodiments, the claims, and the drawings. The embodiments and specific examples are intended for illustrative purposes only and are not intended to limit the scope of this disclosure. Simple Explanation of the Diagram

[0023] This disclosure will become more fully understood from the embodiments and accompanying drawings, wherein:

[0024] Figure 1 is a functional block diagram of a gas separator example according to this disclosure;

[0025] Figure 2 is a more detailed functional block diagram of a single-stage gas separator example according to this disclosure;

[0026] Figure 3 is a more detailed functional block diagram of a two-stage gas separator example according to this disclosure; and

[0027] Figure 4 is a side view of an example gas separator according to the present disclosure, which includes a distillation chamber and an evaporation chamber.

[0028] Figure 5 is a three-dimensional line drawing according to the present disclosure, showing an example of a distillation chamber;

[0029] Figure 6A is a functional block diagram of an example gas delivery system according to this disclosure, which includes a gas separator;

[0030] Figure 6B is a functional block diagram of an example control system for a gas separator according to this disclosure;

[0031] Figure 6C is a flowchart illustrating an example of a method for operating a gas separator according to this disclosure;

[0032] Figure 6D is a flowchart illustrating another example of a method for operating a gas separator having one or more redundant gas separators according to this disclosure;

[0033] Figure 7-10 is a functional block diagram illustrating the configuration of the gas delivery system in Figure 6A; and

[0034] Figure 11 is a functional block diagram of an example of multiple gas separators selectively connected to zero, one, or more processing chambers.

[0035] In the diagram, reference numbers may be used repeatedly to indicate similar and / or identical elements. Implementation

[0036] The gas separator according to this disclosure separates two or more different gases from a gas mixture. For example, a wet gas mixture containing acetylene and acetone can be primarily separated / purified into acetylene gas and liquid acetone.

[0037] The gas separator includes a distillation chamber containing a tortuous path for outputting a gas (e.g., acetylene) and a condensate (e.g., acetone). In some examples, the tortuous path has a helical shape; however, other shapes may be used. The condensate system exiting the tortuous path collects in a cavity within the distillation chamber. The separated gas flows from the cavity to a first outlet of the distillation chamber and then to a processing chamber. The condensate system is supplied via a second outlet in the cavity of the distillation chamber to an evaporation chamber for evaporation and output to an emissions reduction system.

[0038] The multi-zone cooler cools the distillation chamber to a first temperature T1 and the evaporation chamber to a second temperature T2, which is higher than the first temperature T1. The first temperature T1 of the distillation chamber is selected to be below the gas-liquid phase transition temperature (at the supplied gas pressure) of the gas to be separated from the gas mixture (e.g., acetone) and above the gas-liquid phase transition temperature of the gas to be supplied to the processing chamber (e.g., acetylene). The second temperature T2 of the evaporation chamber is selected to be higher than the evaporation temperature of the condensate.

[0039] In some examples, a multi-zone cooler includes a cooling element in thermal contact, a first Peltier device, a heat transfer element, and a second Peltier device. The cooling element may be in the form of a rectangular plate (or another structure with a different shape) and includes channels for receiving fluids, such as process chilled water (PCW). The first and second Peltier devices are configured to transfer heat to the cooling element to cool the distillation chamber to a first temperature T1. Most of the acetone (and any other substance undergoing a phase change up to that point) condenses into a liquid. The second Peltier device is configured to cool the evaporation chamber to a second temperature T2 sufficient to evaporate the condensate.

[0040] The gas separator operates in batch mode. In other words, while the separated gas is supplied to the processing chamber, the gas mixture is supplied to the distillation chamber and the condensate is stored in the cavity of the distillation chamber. Then, the supply of the gas mixture is stopped, and the stored condensate is moved to the evaporation chamber for evaporation and then delivered to the emission reduction system.

[0041] The gas separator can be configured with additional stages connected in a daisy chain to allow additional gas to be separated from the gas mixture in the additional stages. Furthermore, the gas separator can be configured in parallel with other gas separators to handle higher gas flow rates and / or redundancy.

[0042] The liquid movement in the gas separator is unidirectional, requiring fewer valves and interlocks compared to other gas separator methods. The absence of internal moving parts improves reliability. The footprint and enclosure can be adjusted to specific spacing requirements, allowing for flexibility and configuration near the chamber or on the tooling. In some examples, the gas separator is installed within an existing gas chamber in the exhaust-to-emissions reduction system.

[0043] Referring now to FIG. 1, the substrate processing system 110 includes a gas source 120 that supplies a gas mixture to a gas separator 124. Although the gas source 120 and the gas separator 124 will be described below in the context of separating / purifying a mixture of acetylene and acetone, it will be understood that other gas mixtures or wet gases may be separated in a similar manner. The substrate processing system 110 includes a processing chamber 128 and an emission reduction system 132.

[0044] During operation, gas source 120 supplies a gas mixture (e.g., a mixture of acetylene and acetone) to gas separator 124. Gas separator 124 separates most of the first gas (e.g., acetone) from the gas mixture by condensing the first gas, supplies the remaining gas mixture (e.g., mainly acetylene) to processing chamber 128, evaporates the condensed first gas (e.g., acetone), and outputs the evaporated first gas to emission reduction system 132.

[0045] Referring now to Figure 2, the gas separator 200 includes a distillation chamber 210 and an evaporation chamber 214. A multi-zone cooler 224 is in contact with one or more outer surfaces of the distillation chamber 210 and the evaporation chamber 214. In some examples, two multi-zone coolers are used to cool the opposite side surfaces of the distillation chamber 210 and the evaporation chamber 214.

[0046] Multi-zone cooler 224 cools distillation chamber 210 to a first temperature T1 at 232 and evaporation chamber 214 to a second temperature T2 at 236. In some examples, the first temperature T1 is lower than the second temperature T2. In some examples, the first temperature T1 is within a first temperature range of -5°C to -60°C (e.g., -50°C), and the second temperature T2 is within a second temperature range of 0°C to -5°C (e.g., -5°C); however, other temperatures may be used.

[0047] During the first stage of batch operation, a gas source supplies a gas mixture to an evaporation chamber 210 operating at temperature T1. A portion of the gas mixture (e.g., acetone) condenses and is temporarily stored in the distillation chamber 210, while the remainder of the gas mixture remains gaseous (e.g., primarily acetylene) and is delivered to the processing chamber. During the second stage of batch operation, the condensate stream is supplied via a liquid valve 240 to an evaporation chamber 214 for evaporation and then sent to the emission reduction system 132.

[0048] Referring now to Figure 3, the gas separator 300 includes a first distillation chamber 310, a second distillation chamber 314, and an evaporation chamber 318. A multi-zone cooler 324 is in contact with the outer surfaces of the first distillation chamber 310, the second distillation chamber 314, and the evaporation chamber 318. The multi-zone cooler 324 cools the first distillation chamber 310 to a first temperature T1 at 332, cools the second distillation chamber 314 to a second temperature T2 at 336, and cools the evaporation chamber 318 to a third temperature T3 at 338. In some examples, the first temperature T1 is lower than the second temperature T2, and the second temperature T2 is lower than the third temperature T3.

[0049] During operation, a gas source supplies a gas mixture to a first distillation chamber 310 operating at temperature T1. One or more gases in the gas mixture condense in the first distillation chamber 310, and a first residual portion (still gaseous) of the gas mixture is conveyed to a second distillation chamber 314. One or more gases in the first residual gas mixture condense in the second distillation chamber 314, and a second residual portion (in gaseous state) of the gas mixture is conveyed to a processing chamber 128. Finally, the condensate flow system in the first distillation chamber 310 and the second distillation chamber 314 is supplied to an evaporation chamber 350 via liquid valves 344 and 346. Although a single evaporation chamber 350 is shown, different evaporation chambers 350 can be used for each of the first distillation chamber 310 and the second distillation chamber 314. The condensate is evaporated and sent to an emission reduction system.

[0050] Referring now to Figure 4, the gas separator 400 includes a distillation chamber 410 and an evaporation chamber 414. One or more multi-stage coolers 416 are configured to contact the side surfaces of the distillation chamber 410 and the evaporation chamber 414. The multi-stage cooler 416 is shown to include an aeration section 420, which includes one or more inlets 422, one or more outlets 424, and one or more fluid passages 426 for receiving liquids such as process cooling water (PCW) or fluids such as cooled heat transfer gases.

[0051] The first Peltier device 430 is disposed between the gas filling section 420 and the heat transfer member 434. The heat transfer member 434 may be a plate or another structure with a different shape. The hot side of the first Peltier device 430 is configured to be in thermal contact with the gas filling section 420, and the cold side of the first Peltier device 430 is configured to be in thermal contact with the heat transfer member 434. The second Peltier device 438 is disposed between the heat transfer member 434 and the surface of the distillation chamber 410. The hot side of the second Peltier device 438 is configured to be in thermal contact with the heat transfer member 434, and the cold side of the second Peltier device 438 is configured to be in thermal contact with the surface of the distillation chamber 410. The heat transfer member 434 is also in contact with the surface of the evaporation chamber 414.

[0052] The gas mixture is supplied to the distillation chamber 410 via inlet 440, and the separated gas system is output via outlet 442. The condensate system is supplied from the distillation chamber 410 to the cavity 460 in the evaporation chamber 414 via outlet 446 and liquid valve 448. The second outlet 450 of the evaporation chamber 414 is connected to the emission reduction system 132.

[0053] In Figure 5, the distillation chamber 500 includes a tortuous path 510 in fluid communication with an inlet 512. A gas mixture from a gas source travels through the tortuous path 510, controlled at a first temperature T1. The length and cross-sectional area of ​​the tortuous path 510 are selected to provide sufficient fluid flow rate and residence time to allow partial condensation of the fluid (e.g., acetone). The outlet of the tortuous path 510 is fluidly connected to a cavity 520 for collecting the condensate. Gas flows to an outlet passage 530 extending from the top of the cavity 520 to the outlet of the distillation chamber, which is fluidly connected to a processing chamber. In some examples, the tortuous path 510 has a generally spiral shape that generates vortices or circular rotations within the cavity 520. The lower portion 540 of the cavity 520 includes an outlet 544 connected via a liquid valve to an evaporation chamber.

[0054] In some examples, the main body of the distillation chamber 500 and evaporation chamber is made of a solid block of processed material such as stainless steel (SST). The tortuous path 510 is formed by drilling holes at an angle from the side of the block. Each of these holes intersects with another hole from the opposite end face. The side openings are then sealed to form a closed tortuous path including an inlet and an outlet. In some examples, the small-scale implementation of the distillation and evaporation chambers uses 316 SST as the main material (because the relatively low thermal conductivity of stainless steel is less of a design factor over shorter distances). The use of this material enables the construction of a complete wet gas path while meeting the requirements and methods for high-purity gas pipelines. This method also allows for direct solderability of standard end-face metal gaskets and surface-mount seals for easier assembly and integration without the risk of impurities or contamination, and at a lower cost.

[0055] Referring now to Figure 6A, a gas delivery system 600 including a gas separator 610 is shown. The gas separator 610 includes a distillation chamber 614 and an evaporation chamber 616. A liquid valve VL3 is connected between the first outlet of the distillation chamber 614 and the inlet of the evaporation chamber 616.

[0056] Purging gas source 620 is connected to the inlet of distillation chamber 614 via check valve 622, regulator 624, and inlet valve VL1. Gas source 634 is connected to the inlet of distillation chamber 614 via check valve 636 and inlet valve VL2. In some examples, the gas source contains a mixture of acetylene and acetone; however, other gas mixtures may be used. Pressure switch 648 is connected to the inlet of distillation chamber 614. In some examples, pressure switch 648 closes when the measured pressure exceeds a predetermined pressure, for example, 1500 Torr (T); however, other pressure values ​​may be used. Bypass valve VL6 is connected to both the inlet and a second outlet of distillation chamber 614. Concentration meter 652 is connected to the outlet of distillation chamber 614.

[0057] Outlet valve VL4 connects the second outlet of distillation chamber 614 to processing chamber 640. Diverter valve VL5 connects the second outlet of distillation chamber 614 to restricting orifice 660 and fluidly connects to diverter vacuum valve 666 of the emission reduction system. Pressure switch 664 can be connected to the outlet of restricting orifice 660 and the inlet of diverter vacuum valve 666. In some examples, pressure switch 664 closes when the measured pressure exceeds a predetermined pressure, for example, 75 Torr (T); however, other pressure values ​​can be used.

[0058] Referring now to Figure 6B, a control system 670 for a gas separator is shown. The control system 670 includes a controller 672 that controls system valves 674 and one or more processing chambers 680 based on a formulation. The controller receives feedback from a concentration meter 678, one or more pressure switches 676, and the concentration meter 678. The controller 672 controls a cooler 682 and a pump 686 based on one or more temperature sensors 684 to control the temperature of the distillation chamber and the evaporation chamber. The controller 672 controls the gas separator mode between a shut-off, gas supply, and liquid movement mode. In some examples, the controller 672 controls M gas separators for N processing chambers, where M is greater than 1 and N is greater than 0, as will be further described below.

[0059] Referring now to Figure 6C, method 685 for operating a gas separator is shown. At 686, the method determines whether a process gas supply (e.g., acetylene) is required. At 688, the method configures a valve for a gas supply mode. At 690, the method determines whether a gas supply is no longer required or whether the batch cycle is ending. If 690 is no, the method returns to 690. If 690 is yes, the method configures a valve in a liquid movement mode at 692. At 694, the method determines whether a second mode can be ended (e.g., after a period sufficient to move condensate (e.g., acetone) to the evaporation chamber). If 690 is yes, the method returns to 686.

[0060] Referring now to Figure 6D, another method 700 for operating N gas separators is shown. Instead of waiting while the gas separators move the liquid to the evaporation chamber, another of the N gas separators is fluidly connected to the processing chamber to reduce downtime in the processing chamber. At 710, the method determines whether a gas supply is required. If 710 is yes, the method continues at 720, and one of the N gas separators is selected to supply the process gas.

[0061] At 724, the valve system of N gas separators, selected of which are connected, is configured in a first mode and supplies process gas (and stores condensate). At 728, the method determines whether the supply of process gas is still needed. If not at 728, the gas supply is stopped at 730. In some examples, the valve system of N gas separators, selected of which are connected, is configured in a second mode to move liquid to the evaporation chamber at 731.

[0062] If 728 is yes, the method determines whether to end the first mode of the batch cycle. If 734 is no, the method returns to 728. If 734 is yes, the method continues at 736, and the valves of the selected of the N gas separators are configured in the second mode to move liquid to the evaporation chamber at 731. At 738, another of the N gas separators is selected as the selected of the N gas separators to supply gas to the processing chamber, and the method returns to 724. This method reduces downtime. In some examples, steps 736 and 738 are performed in reverse order or simultaneously.

[0063] As can be understood, the method shown in Figure 6D can be modified to simultaneously supply gas from two or more of N gas separators, and then switch to two or more different of the N gas separators.

[0064] Referring now to Figure 7-10, various exemplary configurations of the gas delivery system 600 are shown. In Figure 7, the gas delivery system 600 is shown in the PM supply configuration. Valves VL1, VL3, VL5, and VL6 are closed. Valves VL2 and VL4 are opened. The gas mixture flows from the gas source 634 to the inlet of the distillation chamber 614 via check valve 636 and inlet valve VL2. The gas is separated from the condensate. The separated gas flows from the second outlet of the distillation chamber 614 to the processing chamber 640 via outlet valve VL4.

[0065] In Figure 8, the gas delivery system 600 is shown in liquid movement mode, during which condensate moves from the first outlet of the distillation chamber 614 to the evaporation chamber 616. Valves VL1, VL2, VL4, VL5, and VL6 are closed, and valve VL3 is opened. Condensate flows from the distillation chamber 614 into the evaporation chamber 616, where it evaporates and is output to the emission reduction system via the limiting orifice 660 and the diversion vacuum valve 666.

[0066] In Figure 9, the gas delivery system 600 is shown in a flow splitting configuration. Valves VL3, VL4, and VL6 are closed. Valves VL1 and VL2 are either open or closed. The splitting valve VL5 is open. Either the purge gas or fluid from the gas source 634 can be supplied and split to the emission reduction system via the limiting orifice 660 and the splitting vacuum valve 666. This configuration can be used to clear gas lines after the gas delivery system 600 is installed or under other conditions.

[0067] In FIG. 10, the gas delivery system 600 is shown in a purge configuration. Valves VL2 and VL4 are closed. Valves VL1, VL3, and VL5 are open. Valve VL6 can be in either state. The purge gas flows through inlet valve VL1, distillation chamber 614, liquid valve VL3, evaporation chamber 616, and split valve VL5 to the emission reduction system.

[0068] Referring now to FIG. 11, the gas delivery system 800 can include M gas separators 820-1, 820-2, …, 820-M (collectively referred to as gas separators 820) connected to N processing chambers 824-1, …, and 824-N (collectively referred to as processing chambers 824), where M and N are integers greater than 0. In some examples, M > N. In other examples, M < N or M = N. In the example shown in FIG. 11, M = 3 and N = 2. Inlet valves 830-1, 830-2, …, 830-M (collectively referred to as valves 830) allow control of the fluid supply to zero or more of the M gas separators 820. Outlet valves 834-1, 834-2, …, 834-M (collectively referred to as valves 834) and valves 836-1, …, and 836-N (collectively referred to as valves 836) allow control of the output of the gas separators 820 to the processing chambers 824.

[0069] During use, valves 830, 834, and 836 can be configured such that zero, one, or more of the gas separators 820 supply one or more of the processing chambers 824. Additionally, a process timing can be set such that M-1 of the gas separators 820 (e.g., 2 when M = 3) supply the processing chambers 824 (e.g., N = 2) respectively, while moving the condensate from other gas separators 820 to the evaporation chamber to reduce downtime. Furthermore, if a higher gas flow rate is needed, the outputs of two or more of the gas separators 820 can be supplied to the same processing chamber.

[0070] The foregoing description is illustrative in nature and is not intended to limit the scope of this disclosure, its application, or its uses. The broad teachings of this disclosure can be implemented in various forms. Therefore, while this disclosure includes specific examples, its true scope should not be so limited, as other modifications will become apparent upon reading the drawings, specifications, and the following claims. It should be understood that one or more steps within the method may be performed in different orders (or simultaneously) without altering the principles of this disclosure. Furthermore, while the embodiments described above possess certain features, any one or more of these features described with respect to any embodiment of this disclosure may be implemented in features of any other embodiment and / or combined with features of any other embodiment, even if such combination is not explicitly described. In other words, the described embodiments are not mutually exclusive, and substitutions of one or more embodiments with each other remain within the scope of this disclosure.

[0071] Spatial and functional relationships between components (e.g., modules, circuit elements, semiconductor layers, etc.) are described using a variety of terms, including "connection," "joint," "coupled," "adjacent," "next to," "above," "below," and "set." When describing the relationship between a first and a second component in the foregoing disclosure, unless explicitly stated as "direct," the relationship may be a direct relationship between the first and second components without any other intermediate components, or it may be an indirect relationship between the first and second components with one or more intermediate components (whether spatial or functional). As used herein, the terms A, B, and C, at least one of which should be interpreted as meaning the logic of using non-exclusive OR (A OR B OR C), and should not be interpreted as meaning "at least one of A, at least one of B, and at least one of C."

[0072] In some embodiments, the controller is part of a system, which may be part of the above-described examples. Such a system may include semiconductor processing equipment, comprising one or more processing tools, one or more chambers, one or more processing platforms, and / or specific processing components (wafer pedestals, gas flow systems, etc.). These systems may be integrated with electronic components to control their operation before, during, and after the processing of semiconductor wafers or substrates. These electronic components may be referred to as "controllers," which control various components or sub-components of the system or system. The controller may be programmed, depending on the processing requirements and / or system type, to control any of the processes disclosed herein, including the delivery of processing gases, temperature settings (e.g., heating and / or cooling), pressure settings, vacuum settings, power settings, radio frequency (RF) generator settings, RF matching circuit settings, frequency settings, flow rate settings, fluid delivery settings, position and operation settings, wafer transfer tools and other transfer tools, and / or loading locks connected to or coupled to a specific system.

[0073] Broadly speaking, a controller can be defined as an electronic component having numerous integrated circuits, logic, memory, and / or software that receives instructions, issues instructions, controls operations, enables cleaning operations, enables endpoint measurements, etc. Integrated circuits may include chips in the form of firmware storing program instructions, digital signal processors (DSPs), chips defined as application-specific integrated circuits (ASICs), and / or one or more microprocessors, or microcontrollers that execute program instructions (e.g., software). Program instructions may be instructions communicated to the controller in the form of numerous individual settings (or program files), defining operating parameters for performing specific processes on or for a semiconductor wafer or for a system. In some embodiments, operating parameters may be part of a recipe defined by a process engineer to complete one or more processing steps during the fabrication of one or more layers, materials, metals, oxides, silicon, silicon dioxide, surfaces, circuits, and / or wafer dies.

[0074] In some embodiments, the controller may be part of or coupled to a computer that is integrated with, coupled to, or otherwise networked to the system, or a combination thereof. For example, the controller may be located in the cloud or in all or part of a wafer fab host system, allowing remote access to wafer processing. The computer may enable remote access to the system to monitor the current progress of manufacturing operations, examine the history of past manufacturing operations, examine trends or performance metrics from multiple manufacturing operations, change parameters of the current process, set processing steps to follow the current process, or initiate a new process. In some examples, the remote computer (e.g., a server) may provide process recipes to the system via a network, which may include a local area network or the Internet. The remote computer may include an input or programmed user interface for implementing parameters and / or settings, which are then communicated from the remote computer to the system. In some examples, the controller receives instructions in the form of data specifying parameters for each of the processing steps to be performed during one or more operations. It should be understood that parameters can be specific to the type of process to be performed and the type of tool to which the controller is configured to interface with or control. Therefore, as described above, the controller can be distributed, for example, by comprising one or more discrete controllers networked together and operating for a common purpose (e.g., the process and control described herein). An example of a distributed controller for such a purpose would be one or more integrated circuits on a chamber that communicate with one or more integrated circuits located remotely (e.g., at the platform level or as part of a remote computer), which in turn control the process on the chamber.

[0075] Without limitation, the illustrated system may include a plasma etching chamber or module, a deposition chamber or module, a rotary flushing chamber or module, a metal plating chamber or module, a cleaning chamber or module, a bevel etching chamber or module, a physical vapor deposition (PVD) chamber or module, a chemical vapor deposition (CVD) chamber or module, an atomic layer deposition (ALD) chamber or module, an atomic layer etch (ALE) chamber or module, an ion implantation chamber or module, an orbital chamber or module, and any other semiconductor processing system that may be associated with or used in the manufacture and / or fabrication of semiconductor wafers.

[0076] As described above, depending on one or more process steps to be performed by the tool, the controller may communicate with one or more of the following: other tool circuits or modules, other tool components, cluster tools, other tool interfaces, neighboring tools, adjacent tools, tools located at various locations in the plant, a host computer, another controller, or tools for transporting materials, which transport wafer containers to tool locations and / or loading ports in the semiconductor manufacturing plant.

[0077] 110: Substrate Processing System 120: Gas source 124: Gas Separator 128: Processing Chamber 132: Emission Reduction System 200: Gas Separator 210: Distillation Chamber 214: Evaporation Chamber 224: Multi-zone cooler 240: Liquid valve 300: Gas Separator 310: First distillation chamber 314: Second distillation chamber 318: Evaporation Chamber 324: Multi-zone cooler 344: Liquid valve 346: Liquid valve 350: Evaporation chamber 400: Gas Separator 410: Distillation Chamber 414: Evaporation Chamber 416: Multi-stage cooler 420: Inflatable section 422: Entrance 424: Export 426: Fluid Channel 430: First Parter Device 434: Heat transfer components 438: Second Parter Device 440: Entrance 442: Export 446: Exports 448: Liquid Valve 450: Second Exit 460: Cavity 500: Distillation Chamber 510: Winding Path 512: Entrance 520: Cavity 530: Export Channel 540:lower part 544: Exports 600: Gas delivery system 610: Gas Separator 614: Distillation Chamber 616: Evaporation Chamber 620: Purify the gas source 622: Check valve 624: Regulator 634: Gas Source 636: Check valve 640: Processing Chamber 648: Pressure Switch 652: Concentration meter 660: Restriction Hole 664: Pressure switch 666: Flow divider vacuum valve 670: Control System 672: Controller 674: System valve 676: Pressure Switch 678: Concentration meter 680: Processing Chamber 682: Cooler 684: Temperature sensor 685: Method 686: Pump 700: Method 736: Steps 738: Steps 800: Gas delivery system 820: Gas Separator 820-1: Gas Separator 820-2: Gas Separator 820-M: Gas Separator 824: Processing Chamber 824-1: Processing Chamber 824-N: Processing Chamber 830: Valve 830-1: Inlet Valve 830-2: Inlet Valve 830-M: Inlet Valve 834: Valve 834-1: Outlet Valve 834-2: Outlet Valve 834-M: Outlet Valve 836: Valve 836-1: Valve 836-N: Valve VL1: Inlet valve VL2: Inlet valve VL3: Liquid valve VL4: Outlet valve VL5: Flow divider valve VL6: Bypass valve T1: First temperature T2: Second temperature T3: Third Temperature

Claims

1. A gas separator for a substrate processing system, comprising: First distillation chamber; Evaporation chamber; A first liquid valve includes an inlet in fluid communication with the first distillation chamber and an outlet in fluid communication with the evaporation chamber; and a cooler configured to cool the first distillation chamber to a first temperature and the evaporation chamber to a second temperature different from the first temperature, wherein during a first mode, the first distillation chamber is configured to receive a gas mixture comprising N gases at the inlet of the first distillation chamber, where N is an integer greater than 1; to separate the gas mixture into a first condensate and a first separated gas mixture by condensing at least one of the N gases; to store the first condensate in the first distillation chamber; and to supply the first separated gas mixture at a first outlet of the first distillation chamber, and wherein during a second mode, the first liquid valve transfers the first condensate from the second outlet of the first distillation chamber to the evaporation chamber, while the first distillation chamber does not receive the gas mixture through the inlet of the first distillation chamber and does not supply the first separated gas mixture through the first outlet of the first distillation chamber.

2. The gas separator for a substrate processing system as claimed in claim 1, wherein the first separated gas mixture is supplied to the processing chamber.

3. The gas separator for a substrate processing system as claimed in claim 1 further comprises: a second distillation chamber configured to receive the first separated gas mixture from the first distillation chamber via a first inlet of the second distillation chamber; and a second liquid valve comprising an inlet in fluid communication with the second distillation chamber.

4. The gas separator for a substrate processing system as described in claim 3, wherein: During the first mode of the second distillation chamber, the second distillation chamber is configured to: receive the first separated gas mixture at the first inlet of the second distillation chamber; separate the first separated gas mixture into a second condensate and a second separated gas mixture by condensing another of the N gases; store the second condensate in the second distillation chamber; and supply the second separated gas mixture at the first outlet of the second distillation chamber. During the second mode of the second distillation chamber, the second liquid valve supplies the second condensate from the second outlet of the second distillation chamber to the evaporation chamber, while the second distillation chamber does not receive the first separated gas mixture through the first inlet of the second distillation chamber, nor does it supply the second separated gas mixture through the first outlet of the second distillation chamber.

5. The gas separator for a substrate processing system as claimed in claim 1, wherein the first distillation chamber comprises: a body defining a tortuous path, a cavity, and a channel, wherein the tortuous path includes an inlet in fluid communication with the inlet of the first distillation chamber for receiving the gas mixture, and an outlet of the tortuous path for supplying the first condensate and the first separated gas mixture to the cavity, and wherein the channel fluidly connects the cavity to the first outlet of the first distillation chamber.

6. The gas separator for a substrate processing system as claimed in claim 5, wherein the system of the first distillation chamber is made of a solid block of a processed material.

7. The gas separator for a substrate processing system as claimed in claim 6, wherein the material comprises stainless steel.

8. The gas separator for a substrate processing system as described in claim 1, the cooler comprising: A first cooling component includes a channel configured to receive fluid; A first Peltier device includes a first side portion in thermal communication with the first cooling member; a heat transfer member in thermal communication with the second side portion of the first Peltier device and the evaporation chamber; and a second Peltier device includes a first side portion in thermal communication with the heat transfer member and a second side portion in thermal communication with the first distillation chamber.

9. The gas separator for a substrate processing system as claimed in claim 1, wherein the gas mixture comprises acetylene and acetone.

10. A gas delivery system comprising: a gas tank containing the gas separator of claim 1; and an emission reduction system in fluid communication with the gas tank and configured to vent the gas tank during operation of the gas separator.

11. A substrate processing system comprising: N gas separators of claim 1, wherein N is an integer greater than 1; M processing chambers, wherein M is an integer greater than 0; and a plurality of valves configured to connect one of the N gas separators to one or more of the M processing chambers.

12. A gas separator for a substrate processing system, comprising: a distillation chamber configured to operate in a first mode and a second mode; an evaporation chamber; and a first liquid valve including an inlet in fluid communication with the distillation chamber and an outlet in fluid communication with the evaporation chamber; and a first cooler, configured to be in thermal communication with a first side surface of the distillation chamber and the evaporation chamber, and comprising: A first cooling component includes a channel configured to receive fluid; A first Peltier device includes a first side portion in thermal communication with the first cooling member; a heat transfer member in thermal communication with a second side portion of the first Peltier device and the evaporation chamber; and a second Peltier device includes a first side portion in thermal communication with the first cooling member and a second side portion in thermal communication with the distillation chamber.

13. The gas separator for a substrate processing system as claimed in claim 12, further comprising a second cooler, which includes: Second cooling component; A third Peltier device includes a first side thermally connected to the second cooling member; a heat transfer member thermally connected to the second side of the third Peltier device and the evaporation chamber; and a fourth Peltier device includes a first side thermally connected to the heat transfer member and a second side thermally connected to the distillation chamber.

14. The gas separator for a substrate processing system as claimed in claim 13, wherein the second cooler is configured to be in thermal communication with the second side surface of the distillation chamber and the second side surface of the evaporation chamber.

15. The gas separator for a substrate processing system as claimed in claim 12, wherein the gas separator operates in a batch mode including a supply mode and a liquid movement mode.

16. The gas separator for a substrate processing system as described in claim 12, wherein: During the first mode, the distillation chamber is configured to: receive a gas mixture containing N gases at the inlet of the distillation chamber, where N is an integer greater than 1; separate the gas mixture into a condensate and a first separated gas mixture by condensing at least one of the N gases; store the condensate in the distillation chamber; and supply the first separated gas mixture to the first outlet of the distillation chamber. During the second mode, the first liquid valve supplies the condensate stored in the distillation chamber from the second outlet of the distillation chamber to the evaporation chamber, while the distillation chamber does not receive the gas mixture through the inlet and does not supply the first separated gas mixture through the first outlet.

17. The gas separator for a substrate processing system as claimed in claim 16, wherein the distillation chamber comprises: The body defines a tortuous path, a cavity, and a channel, wherein the tortuous path includes an inlet in fluid communication with the inlet of the distillation chamber for receiving the gas mixture, and an outlet of the tortuous path for supplying the condensate and the first separated gas mixture to the cavity, and wherein the channel connects the cavity to the first outlet of the distillation chamber.

18. The gas separator for a substrate processing system as claimed in claim 17, wherein the tortuous path has a spiral shape.

19. The gas separator for a substrate processing system as claimed in claim 17, wherein the system of the distillation chamber is made of a solid block of a processed material.

20. The gas separator for a substrate processing system as claimed in claim 19, wherein the material comprises stainless steel.

21. The gas separator for a substrate processing system as claimed in claim 16, wherein the gas mixture comprises acetylene and acetone.

22. A gas delivery system comprising: a gas tank containing the gas separator of claim 12; and an emission reduction system in fluid communication with the gas tank and configured to vent the gas tank during operation of the gas separator.

23. A substrate processing system comprising: N gas separators of claim 12, wherein N is an integer greater than 1; M processing chambers, wherein M is an integer greater than 0; and a plurality of valves configured to connect any one of the N gas separators to any one or more of the M processing chambers.

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