Transfer device and transfer method
The transfer apparatus uses energy irradiation to form bubbles of varying volumes and connect them for tilting components, addressing the adhesion challenge and ensuring reliable transfer to the target substrate.
Patent Information
- Application Number
- TW112111725
- Authority / Receiving Office
- TW · TW
- Patent Type
- Patents
- Current Assignee / Owner
- Priority Date
- 2022-03-28
- Filing Date
- 2023-03-28
- Publication Date
- 2026-07-11
- Estimated Expiration
- 2043-03-27
AI Technical Summary
Existing transfer apparatuses face challenges where the force holding components on the transfer substrate after laser irradiation is greater than the force separating them, leading to components not peeling off and returning to the substrate due to residual adhesion.
The transfer apparatus employs an energy irradiation section to form bubbles in the bubble layer, changing the tilt of the component relative to the transfer substrate, allowing it to approach a trapping layer for reliable transfer by forming bubbles of varying volumes and connecting them to facilitate peeling.
This method ensures reliable peeling and transfer of components to the target substrate by reducing the load on the component during peeling and maintaining a stable tilt, enhancing transfer accuracy and efficiency.
Smart Images

Figure IMG-2_DRAW_112111725-A0304-14-0001-1 
Figure IMG-2_DRAW_112111725-A0304-14-0002-2 
Figure IMG-2_DRAW_112111725-A0304-14-0003-3
Abstract
Description
Technical Field
[0001] This invention relates to a transfer apparatus and method for transferring components to a transfer substrate by irradiating it with light energy and using blistering. Prior Technology
[0002] In recent years, the industry has been striving to miniaturize semiconductor chips to reduce costs and achieve high-precision mounting of these miniaturized semiconductor chips. When mounting these miniaturized chips at high speed, a method known as laser separation is employed: laser irradiation is used to etch the bonding surface between the chip and the transfer substrate, causing the chip to peel off from the transfer substrate, be energized, and transferred to the substrate to be transferred.
[0003] Patent Document 1 discloses a transfer apparatus for transferring components using an ablation technique. In this transfer apparatus, a laser irradiation device is used to selectively irradiate a portion of a plurality of components arranged on a transfer substrate with a laser beam, causing ablation of the layer holding the components. The laser irradiation device includes: a laser source that generates a laser beam; a reflective member that reflects the laser beam from the laser source in a desired direction; and a control member that, in conjunction with the reflective member, controls the irradiation and non-irradiation of the laser beam. Through this selective ablation, a portion of the component is transferred to the substrate to be transferred. That is, the component is transferred from the transfer substrate to the substrate to be transferred by laser ablation.
[0004] Furthermore, Patent Document 2 discloses the following technology: by irradiating a blister layer disposed on a transfer substrate and having an adhesive layer on the surface side with a laser beam, bubbles are generated in the blister layer (bulges up), and the article (component) attached to the adhesive layer is pushed out by the generation of the bubbles, thereby separating the article from the transfer substrate. Previous technical documents Patent documents
[0005] Patent Document 1: Japanese Patent Application Publication No. 2006-041500 Patent Document 2: Japanese Patent Publication No. 2014-515883 Summary of the Invention
[0006] [The problem the invention aims to solve] However, for the transfer apparatus of the components shown in Patent Documents 1 and 2, there is a concern that the force holding the component on the transfer substrate (transfer source substrate) after laser irradiation may still be greater than the force separating the component, and the component may not peel off from the transfer substrate. In particular, when bubbles are generated at the part of the transfer substrate that holds the component due to erosion, as shown in FIG11, there is a possibility that even if a bubble 130 is generated by irradiating the bubble layer 124 holding a component 121 on the transfer substrate 122 with laser, the contact area between the bubble layer 124 and the component 121 remains large, and the force holding the component 121 at the contact surface (e.g., adhesion) is greater than the force separating the component 121 (e.g., kinetic energy and gravity accompanying the bubble generation), resulting in the component 121 not peeling off from the transfer substrate 122. As a result, there is a problem that element 121 is not transferred to the transfer substrate 123 with the trapping layer 125, but returns to the transfer substrate 122 as the bubble 130 shrinks.
[0007] In view of the above-mentioned problems, the present invention aims to provide a transfer device and transfer method that can reliably peel an element from a transfer substrate and transfer it to the transfer substrate. [Technical means to solve the problem]
[0008] To solve the above problems, the transfer apparatus of the present invention is characterized in that it transfers an element held on a transfer substrate to a transfer substrate, and has an energy irradiation section. The energy irradiation section irradiates an active energy line through the transfer substrate toward the element when the transfer substrate and the transfer substrate face each other with the element in between. The transfer substrate has a bubble layer that generates bubbles by irradiation of the active energy line. The element is held on the bubble layer. The transfer substrate has a trapping layer that can hold the element and is arranged such that the trapping layer faces the transfer substrate. The energy irradiation section changes the tilt of the element relative to the transfer substrate by forming the bubble in the area of the bubble layer where one element is held, i.e., the element holding area, so that the element approaches the transfer substrate. In this way, while the element is held in the bubble layer, a portion of the element contacts the trapping layer first.
[0009] According to the transfer apparatus of the present invention, by changing the tilt of the element relative to the transfer substrate and bringing it closer to the substrate to be transferred, a portion of the element becomes easier to contact the capture layer compared to the case where the element approaches the substrate to be transferred while parallel to the transfer substrate, and the element can be transferred to the substrate to be transferred from this point.
[0010] Furthermore, the aforementioned bubbles should shrink over time.
[0011] In this way, there is no need to wait for the transfer substrate to separate from the substrate being transferred; the bubble layer will naturally peel off from the component that is in contact with the trapping layer.
[0012] Furthermore, the aforementioned bubble should preferably be formed such that the center of the bubble is located in the peripheral area of the holding region of the aforementioned element, excluding the center.
[0013] In this way, even if a single bubble is formed, it is possible to create a state in which the component is tilted relative to the transfer substrate.
[0014] Furthermore, it is advisable to sequentially form at least two of the aforementioned bubbles within the area where the aforementioned element is held.
[0015] This allows the components to be stably tilted relative to the transfer substrate.
[0016] Furthermore, when large and small bubbles of different volumes are formed in the area where the above-mentioned components are held, it is advisable to form the small bubbles first, and then, with the components tilted by the small bubbles, form the large bubbles at a position where the gap between the transfer substrate and the components is smaller than the position where the small bubbles are formed.
[0017] In this way, before a larger tilt is formed by large bubbles, a portion of the component is peeled off from the foaming layer by forming small bubbles, thus reducing the load on the component when large bubbles are formed.
[0018] Furthermore, it is advisable to form three or more bubbles of different volumes within the aforementioned component holding area, arranged in order of volume.
[0019] This allows for a more stable maintenance of the tilt of the component relative to the transfer substrate.
[0020] Furthermore, large and small bubbles of different volumes can be formed in the aforementioned component holding area by interconnection, and the large bubbles can expand toward the aforementioned transferred substrate by the movement of gas in the small bubbles into the large bubbles.
[0021] In this way, as the large bubble expands towards the substrate to be transferred, the tilt of the component increases compared to before the expansion, and the component as a whole moves closer to the trapping layer, thus enabling more reliable transfer of the component to the substrate to be transferred.
[0022] Furthermore, the aforementioned large bubbles and the aforementioned small bubbles should preferably be connected by thin, thread-like bubbles.
[0023] This makes it easy to create a state where large and small bubbles are interconnected.
[0024] Furthermore, in order to solve the above problems, the transfer apparatus of the present invention is characterized in that it transfers an element held on a transfer substrate to a transfer substrate, and has an energy irradiation section. The energy irradiation section irradiates an active energy line through the transfer substrate toward the element when the transfer substrate and the transfer substrate face each other with the element in between. The transfer substrate has a bubble layer that generates bubbles by irradiation of the active energy line. The element is held on the bubble layer. The transfer substrate has a trapping layer that can hold the element and is configured such that the trapping layer faces the transfer substrate. The energy irradiation section contacts the element with the trapping layer while the element is held in the bubble layer by forming large and small bubbles of different volumes in the area of the bubble layer where one element is held, i.e., the element holding area, in an interconnected manner. The large bubble expands toward the transfer substrate by the movement of gas in the small bubble into the large bubble.
[0025] According to the transfer apparatus of the present invention, as the large bubble expands toward the substrate to be transferred, the entire component is closer to the trapping layer than before the expansion, thus enabling more reliable transfer of the component to the substrate to be transferred.
[0026] Furthermore, to solve the above problems, the transfer method of the present invention is characterized by being a transfer method for transferring an element held on a transfer substrate to a transfer substrate, and includes an energy irradiation step. This energy irradiation step involves irradiating an active energy line from the transfer substrate toward the element while the transfer substrate and the transfer substrate face each other with the element in between, causing the element to peel off from the transfer substrate and move toward the transfer substrate. The transfer substrate has a bubble layer that generates bubbles through irradiation by the active energy line. The element is held in the bubble layer. The transfer substrate has a trapping layer that holds the element, and the trapping layer is configured to face the transfer substrate. In the energy irradiation step, a portion of the element contacts the trapping layer while the element is held in the bubble layer by forming bubbles in the area of the bubble layer where one element is held, i.e., the element holding area, thereby changing the tilt of the element relative to the transfer substrate and causing it to approach the transfer substrate.
[0027] According to the transfer method of the present invention, the tilt of the element relative to the transfer substrate is changed so that it approaches the substrate to be transferred. In this way, compared with the case where the element approaches the substrate to be transferred in a state parallel to the transfer substrate, a part of the element becomes easier to contact the capture layer, and the element can be transferred to the substrate to be transferred from this point.
[0028] Furthermore, to solve the above problems, the transfer method of the present invention is characterized in that it transfers an element held on a transfer substrate to a transfer substrate, and includes an energy irradiation step. In this energy irradiation step, the transfer substrate and the transfer substrate face each other with the element in between. An active energy line is irradiated from the transfer substrate toward the element, causing the element to peel off from the transfer substrate and move toward the transfer substrate. The transfer substrate has a bubble layer that generates bubbles by irradiation of the active energy line. The element is held on the bubble layer. The transfer substrate has a trapping layer that can hold the element and is configured such that the trapping layer faces the transfer substrate. In the energy irradiation step, the element is brought into contact with the trapping layer while the element is held in the bubble layer by the following method: large bubbles and small bubbles of different volumes are formed in the area of the bubble layer where one element is held, i.e., the element holding area, in an interconnected manner. The large bubbles expand toward the transfer substrate by the movement of gas in the small bubbles into the large bubbles.
[0029] According to the transfer method of the present invention, as the large bubble expands toward the substrate to be transferred, the entire component is closer to the trapping layer than before the expansion, thus enabling more reliable transfer of the component to the substrate to be transferred. [Effects of the Invention]
[0030] By means of the transfer apparatus and transfer method of the present invention, the component can be reliably peeled off from the transfer substrate and transferred to the substrate to be transferred. Simple Explanation of the Diagram
[0031] Figure 1 is a diagram illustrating a transfer apparatus according to one embodiment of the present invention. Figures 2(a) and (b) are diagrams showing the transfer substrate in front of the transfer element of the present invention and the substrate to be transferred. Figures 3(a) and (b) illustrate one embodiment of the transfer method using the transfer apparatus of the present invention. Figure 4 shows the transfer substrate and the substrate being transferred after a specified time following irradiation with active energy lines. Figures 5(a) and (b) illustrate a transfer method according to another embodiment of the present invention. Figure 6 illustrates a transfer method according to another embodiment of the present invention. Figures 7(a) and (b) illustrate the process of bubble shape change in the transfer method shown in Figure 6. Figure 8 is a diagram illustrating a transfer method according to another embodiment of the present invention. Figure 9 illustrates a transfer method according to another embodiment of the present invention. Figure 10 is a diagram illustrating a transfer method according to another embodiment of the present invention. Figures 11(a) and (b) illustrate examples of component transfer failures in the previous transfer method. Implementation
[0032] The transfer apparatus according to one embodiment of the present invention will be described with reference to Figures 1 and 2. Figure 1 is a diagram illustrating the transfer apparatus according to one embodiment of the present invention, and Figure 2 is a diagram showing the transfer substrate and the substrate to be transferred in front of the transfer element of the present invention. Figure 2(a) is a front view, and Figure 2(b) is a view viewed along the direction of arrow AA in Figure 2(a).
[0033] The transfer apparatus 10 includes: a laser irradiation unit 12 that irradiates laser light 11; a transfer substrate holding unit 13 that can hold the transfer substrate 22 to move at least along the X-axis and Y-axis directions; a transfer substrate holding unit 14 located below the transfer substrate holding unit 13 and holding the transfer substrate 23 facing the transfer substrate 22 with a gap; and a control unit not shown; and the transfer apparatus 10 transfers the element 21 from the transfer substrate 22 to the transfer substrate 23 by irradiating the transfer substrate 22 with laser light 11 to generate etching on the transfer substrate.
[0034] The laser irradiation unit 12 is one embodiment of the energy irradiation unit of the present invention, and is a device for irradiating laser light 11, such as an excimer laser, which is an active energy line, and is fixedly disposed in the transfer apparatus 10. In this embodiment, the laser irradiation unit 12 irradiates a point-like laser light 11. The laser light 11 is controlled to irradiate the X-axis and Y-axis positions by means of a galvanometer lens 15 and an fθ lens 16 whose angles are adjusted by a control unit, and selectively irradiates a plurality of elements 21 disposed on the transfer substrate 22 held by the transfer substrate holding unit 13. By the laser light 11 passing through the transfer substrate 22 and incident on the vicinity of the elements 21, erosion caused by the application of activation energy (light energy) occurs between the transfer substrate 22 and the elements 21. This erosion energizes the elements 21, transferring the elements 21 from the transfer substrate 22 to the transfer substrate 23. Furthermore, in this description, the elements 21 are, for example, semiconductor wafers.
[0035] The transfer substrate holding portion 13 has an opening that adsorbs and holds the transfer substrate 22 near its outer periphery. Laser light 11 emitted from the laser irradiation portion 12 can irradiate the transfer substrate 22 held in the transfer substrate holding portion 13 through the opening.
[0036] The transfer substrate 22 is a substrate made of glass or the like that allows laser light 11 to pass through, and holds the element 21 on its lower surface. Furthermore, as shown in FIG2(a), a bubble layer 24 is formed on the surface of the transfer substrate 22 that holds the element 21, and the surface of the bubble layer 24 is adhesive. The adhesive force of the surface of the bubble layer 24 becomes the holding force for the element 21, thus adhering and holding the element 21.
[0037] Furthermore, the transfer substrate holding portion 13 is moved relative to the transfer substrate holding portion 14 in at least the X-axis and Y-axis directions by a moving mechanism (not shown). The position of the transfer substrate holding portion 13 is adjusted by controlling the moving mechanism by a control unit (not shown), thereby adjusting the relative position of the element 21 held on the transfer substrate 22 relative to the transfer substrate 23.
[0038] The substrate holding portion 14 has a flat surface on its upper surface. During the transfer step of component 21, the substrate 23 is held in a manner where the bubble layer 24 of the transfer substrate 22 and the component 21 held by the bubble layer 24 face each other to the transfer surface of the substrate 23. A plurality of suction holes are provided on the upper surface of the substrate holding portion 14 to hold the back side of the substrate 23 (the side of component 21 that is not transferred) by suction.
[0039] Here, the transfer substrate 23 of this embodiment is a substrate made of glass or the like, and as shown in FIG2(a), an adhesive trapping layer 25 is provided on the transfer surface (the side of the receiving element 21) to adhere and hold the element 21 transferred from the transfer substrate 22.
[0040] Furthermore, in this embodiment, the relative movement between the transfer substrate holding portion 13 and the substrate holding portion 14 is obtained by moving only the transfer substrate holding portion 13 along the X-axis and Y-axis directions. However, when the size of the substrate 23 is large and it is impossible to place the entire surface of the substrate 23 directly below the irradiation range of the laser light 11, the substrate holding portion 14 can also be provided with a movement mechanism in the X-axis and Y-axis directions.
[0041] In the transfer apparatus 10 having the above configuration, with the transfer substrate 22 and the substrate 23 facing each other across the element 21, laser light 11 is irradiated from the transfer substrate 22 toward the element 21. By irradiating the bubble layer 24 with laser light 11, the energy of the laser light 11 causes a partial decomposition of the material of the bubble layer 24, thereby generating gas. Due to the decomposition of the material of the bubble layer 24 and the generation of gas, bubbles 30 are generated inside the bubble layer 24 or between the glass surface 22a of the transfer substrate 22 and the bubble layer 24, as shown in FIG1. This phenomenon of generating bubbles 30 is referred to as bubbling in this description. Furthermore, the area of the bubble layer 24 holding the element 21, as shown by the double-lined shadow in FIG2(b), is referred to as the element holding area 24a in this description.
[0042] FIG3 illustrates one embodiment of the transfer method using the transfer apparatus of the present invention. FIG3(a) shows the state of the bubble layer from the same viewpoint as the view along the arrow direction in FIG2(a), and FIG3(b) is a front view including the transfer substrate and the substrate to be transferred.
[0043] As shown in Figure 3(a), by irradiating point C in the element holding region 24a of the foaming layer 24 with laser light 11 as an active energy line, bubbles are generated in a part of the element holding region 24a with point C as the center, thereby forming bubble 30.
[0044] The distance between the surface of the bubbly layer 24 where bubbling occurs and the glass surface 22a is greater than the distance between the surface of the bubbly layer 24 and the glass surface 22a before bubbling occurs. Therefore, when bubbling occurs in the bubbly layer 24 within the component holding region 24a, the component 21 leaves the glass surface 22a of the transfer substrate 22 while still held on the surface portion of the bubbly layer 24.
[0045] In this embodiment, the transfer substrate 23 is disposed near the element 21 and facing each other at a predetermined interval. Therefore, by generating bubbles, the element 21 approaches the capture layer 25 of the transfer substrate 23 while remaining on the surface portion of the bubble layer 24.
[0046] In this embodiment, only one bubble 30 is formed in the component holding region 24a. The bubble 30 is formed such that its center is located in the peripheral portion of the component holding region 24a, excluding the center (the dashed area in Figures 3(a) and 3(b)). Therefore, when the component 21 is held in the bubble layer 24 and moves away from the transfer substrate 22, as shown in Figure 3(b), the tilt of the component 21 relative to the transfer substrate 22 changes as it moves away. Thus, when the component 21 is tilted relative to the transfer substrate 22, there is a portion P relatively close to the transfer substrate 22 and a portion Q relatively far from the transfer substrate 22. Compared to the case where the bubble 30 is formed in the center of the component holding region 24a and the component 21 moves away while remaining parallel to the transfer substrate 22, portion Q becomes a position farther from the transfer substrate 22. Therefore, the possibility that some Q will reach the trapping layer 25 of the transfer substrate 23 first and come into contact with the trapping layer 25 is relatively higher.
[0047] By having a portion Q of element 21 first contact the trapping layer 25, at least a portion of element 21 is adhered and held to the trapping layer 25. Here, if the adhesive holding force of the trapping layer 25 on element 21 is greater than the adhesive holding force of the bubble layer 24 on element 21, then when the trapping layer 25 and the bubble layer 24 move away from each other and the trapping layer 25 and the bubble layer 24 pull on element 21, the bubble layer 24 peels off from element 21, and the trapping layer 25 holds the entire surface of element 21. That is, the transfer of element 21 from the transfer substrate 22 to the transfer substrate 23 is completed.
[0048] Thus, by forming bubbles 30 in the element holding region 24a of the bubble layer 24, the element 21 is tilted relative to the transfer substrate 22 and approaches the transfer substrate 23. Compared with the case where the element 21 approaches the transfer substrate 23 directly in a state parallel to the transfer substrate 22, at least a portion of the element 21 becomes easier to contact the capture layer 25, and the element 21 can be transferred to the transfer substrate 23 from this starting point.
[0049] Furthermore, in the case where the element 21 is held in the bubble layer 24 and then contacted with the capture layer 25 as in the present invention, i.e., the element 21 is always held by something while being transferred from the transfer substrate 22 to the transfer substrate 23, compared with the case where the element is temporarily separated from the transfer substrate and then dropped onto the transfer substrate for transfer as in the previous laser lifting method, the influence of air resistance can be reduced and the transfer can be performed with good positional accuracy.
[0050] Next, Figure 4 shows the transfer substrate and the substrate being transferred after a specified time following irradiation with the active energy lines as shown in Figure 3.
[0051] There is a possibility that the bubbles 30 may shrink due to the following reasons: the gas forming the bubbles 30 by the irradiation of the active energy lines shrinks as the temperature of the bubbles 30 decreases, or diffuses into the bubbling layer 24. In this case, after the active energy lines of all the components 21 on the transfer substrate 22 have been irradiated, there is no need to wait for the transfer substrate 22 and the substrate 23 to move away from each other. The bubbling layer 24 will naturally peel off from the components 21 in contact with the trapping layer 25 due to the shrinkage of the bubbles 30, thereby completing the transfer of the components 21.
[0052] Next, the transfer method of another embodiment of the present invention will be described using FIG5. FIG5(a) shows the state of the bubble layer from the same viewpoint as the view along the arrow direction of FIG2(a), and FIG5(b) is a front view including the transfer substrate and the substrate to be transferred.
[0053] In this embodiment, laser light 11 is irradiated onto two locations within the element holding region 24a, forming two bubbles (a large bubble 30a and a small bubble 30b), each with a different volume. Thus, bubbles of different volumes can be formed by varying the power of the laser light 11 required for each bubble's formation, the number of irradiations, etc. Furthermore, in this embodiment, the bubbles are formed sequentially starting with the smaller one.
[0054] Thus, by using at least two bubbles of different sizes, i.e. different heights from the glass surface 22a, the element 21 is tilted away from the glass surface 22a relative to the transfer substrate 22, and compared with the case where the number of bubbles is smaller, the state of leaving in this manner can be stably maintained.
[0055] Furthermore, in this embodiment, when large bubbles 30a and small bubbles 30b of different volumes are formed in the component holding region 24a, small bubbles 30b are formed first. While the component 21 is tilted by the small bubbles 30b, as shown in FIG5(b), large bubbles 30a are formed at a position smaller than the formation position of small bubbles 30b at the interval between the transfer substrate 22 and the component 21. In this way, before a larger tilt is formed using large bubbles 30a, a portion of the component 21 is peeled off from the foaming layer 24 by forming small bubbles 30b, thus reducing the load applied to the component 21 when forming large bubbles 30a.
[0056] Furthermore, multiple bubbles can also have the same volume. In this case, by forming bubbles sequentially in one direction starting from the bubble located at the end of the element holding region 24a, the tilt of the element 21 can be increased with each bubble formed.
[0057] Here, the number of bubbles formed in the component holding region 24a is not limited to two, but may be three or more. In this case, by forming these bubbles in the component holding region 24a in a volume order, the tilt of the component 21 relative to the transfer substrate 22 can be maintained more stably.
[0058] Next, Figure 6 will be used to describe another embodiment of the transfer method of the present invention.
[0059] In this embodiment, two bubbles of different volumes (large bubble 30c and small bubble 30d) are formed within the element holding region 24a. Here, the large bubble 30c and the small bubble 30d are connected and communicate at the connecting portion 31. Furthermore, the foaming layer 24 has some elasticity, and the state formed by the large bubble 30c, the small bubble 30d, and the foaming layer 24 surrounding them is similar to the state in which the openings of two balloons of different sizes are connected.
[0060] When two balloons of different sizes are connected at their respective openings, the smaller balloon will become smaller because the internal pressure of the smaller balloon is higher than that of the larger balloon. This causes the gas inside the smaller balloon to move towards the larger balloon, thus making the larger balloon appear larger.
[0061] Here, Figures 7(a) and 7(b) are used to explain the process of bubble shape change in the transfer method of this embodiment. The large bubble 30c and small bubble 30d, which are interconnected as in this embodiment, also exhibit the same behavior as the two balloons described above. As shown in Figure 7(a) to Figure 7(b), the gas in the small bubble 30d moves into the large bubble 30c, causing the small bubble 30d to become smaller and the large bubble 30c to become larger.
[0062] Thus, the large bubble 30c becomes larger and expands towards the substrate 23 being transferred, as shown in FIG7(b), the height dimension of the large bubble 30c changes from H1 to H1+ΔH. Accompanying this, the tilt of the element 21 becomes larger, as shown in part Q of FIG7(b), forming a shape in which at least a portion of the element 21 contacts the trapping layer 25.
[0063] Here, particularly in this embodiment, as shown in FIG7, each bubble is formed at the interface between the glass surface 22a of the transfer substrate 22 and the bubble layer 24, and the adhesion between the bubble layer 24 and the glass surface 22a is greater than the tension of the bubble layer 24 around each bubble. In this case, when the volume of the large bubble 30c increases, the diameter D1 remains almost unchanged, and the change in volume mainly contributes to the expansion of the height. That is, the aspect ratio of the large bubble 30c increases.
[0064] Thus, by expanding the large bubble 30c in the direction of increasing aspect ratio, the increase in height dimension ΔH becomes larger compared to the case where the size simply increases in all directions, which can further increase the tilt of element 21. Furthermore, when a bubble of a specified height dimension is formed, the volume can be relatively reduced, thereby reducing the power of the irradiated laser light 11, the number of irradiations, etc.
[0065] Furthermore, in this embodiment, when large bubbles 30c and small bubbles 30d of different volumes are formed in the element holding region 24a, small bubbles 30d are formed first. With the element 21 tilted by the small bubbles 30d, as shown in FIG7(a), large bubbles 30c are formed at a position smaller than the formation position of small bubbles 30d between the transfer substrate 22 and the element 21. This makes the tilt of the element 21 caused by the expansion of the large bubbles 30c more significant, reducing the power and number of irradiations required for a portion Q of the element 21 to reach the capture layer 25.
[0066] Next, Figure 8 will be used to describe another embodiment of the transfer method of the present invention.
[0067] In this embodiment, the bubble layer 24 forming the element holding region 24a is irradiated with laser light 11 in such a way that four bubbles 30e, 30f, 30g, and 30h of different volumes are formed in volume order along the diagonal of the element holding region 24a. Furthermore, adjacent bubbles are connected to each other by connecting portions 32 that serve as fine line-like bubbles.
[0068] When connecting two or more bubbles in this manner, the gas moves from the smallest bubble to the largest bubble in the same way as in the above embodiment. The gas moves from the smallest bubble 30h to the second smallest bubble 30g, from bubble 30g to the second largest bubble 30f, and from bubble 30f to the largest bubble 30e. Then, all the gas in the bubbles except the largest bubble 30e contributes to the expansion of bubble 30e. Compared to the case where a single bubble forms a bubble of the same height as the expanded bubble 30e, this reduces the power of the irradiated laser light 11 and the number of irradiations. Furthermore, in this case, the bubble formation sequence is bubble 30h, bubble 30g, bubble 30f, bubble 30e, and each connecting part 32.
[0069] Furthermore, as in this embodiment, by forming a plurality of bubbles along the longest line segment, i.e., the diagonal, within the rectangular element holding area 24a, more bubbles can be configured, and the height dimension of the largest bubble (bubble 30e) can be made larger.
[0070] Furthermore, as in this embodiment, a fine thread-like connecting portion 32 is formed by irradiation with laser light 11, and the connecting portion 32 is used to connect the bubbles to each other. This form makes it easy to form a shape in which the bubbles are connected to each other.
[0071] Next, Figure 9 will be used to describe another embodiment of the transfer method of the present invention.
[0072] In this embodiment, the largest bubble 30i is formed at the center of the element holding region 24a, and the bubble 30j is connected to the bubble 30i at its four corners via the connecting portion 32. Thus, it is not necessary for the bubbles to be connected one-to-one with each other, and multiple bubbles can be connected to one bubble.
[0073] In this embodiment, the bubble 30i is disposed at the center of the element holding region 24a, so the element 21 is not tilted relative to the transfer substrate 22 as in the embodiment described above. However, because the bubble 30i expands due to the presence of the bubble 30j that supplies gas to the bubble 30i, the possibility of the element 21 approaching the trapping layer 25 and being able to contact the trapping layer 25 is increased.
[0074] Furthermore, in this embodiment, gas moves from a plurality of bubbles 30j to bubble 30i. Therefore, compared to the case where there is only one bubble 30j, the volume of bubble 30i increases and the extent to which it expands toward the substrate 23 being transferred increases. As a result, the possibility of element 21 getting closer to and contacting the trapping layer 25 increases.
[0075] Next, Figure 10 will be used to describe another embodiment of the transfer method of the present invention.
[0076] In this embodiment, bubbles 30k are formed in the component holding region 24a, and fine thread-like connecting portions 33 are arranged in a longitudinal and transverse manner to directly or indirectly connect with the bubbles 30k. Gas can also move from the connecting portions 33 to the bubbles 30k, the volume of the bubbles 30k increases, and they can expand in the direction of the transfer substrate 23.
[0077] By using the above transfer device and transfer method, the component can be reliably peeled off from the transfer substrate and transferred to the substrate.
[0078] Here, the transfer apparatus and transfer method of the present invention are not limited to the forms described above, and may also be other forms within the scope of the present invention. For example, in the above description, the foaming layer and the capturing layer hold the element by adhesive force, but the element may also be held by holding force other than adhesive force.
[0079] 10: Transfer device 11: Laser light (active energy line) 12: Laser light source (energy irradiation unit) 13: Transfer substrate holding part 14: Substrate holding portion for transfer printing 15: Galvanometer lens 16: fθ lens 21: Components 21a: Bump 22: Transfer substrate 22a: Glass surface 23: Transfer substrate 24: Bubble Layer 24a: Component holding area 25: Capture Layer 30, 30e, 30f, 30g, 30h, 30i, 30j, 30k: bubbles 30a, 30c: Large air bubbles 30b, 30d: Small air bubbles 31: Connecting Part 32: Connecting parts 33: Connecting parts 121: Components 122: Transfer substrate 123: Transfer substrate 124: Bubble Layer 125: Capture Layer 130: Bubbles C: Point D1: Diameter H1: Height dimension H1+ΔH: Height dimension P: Part Q: Part
Claims
1. A transfer apparatus, characterized in that it transfers an element held on a transfer substrate to a transfer substrate, and has an energy irradiation section that irradiates an active energy line through the transfer substrate toward the element when the transfer substrate and the transfer substrate face each other with the element in between. The transfer substrate has a bubble layer that generates bubbles by irradiation of the active energy line. The element is held on the bubble layer. The transfer substrate has a trapping layer that holds the element and is configured such that the trapping layer faces the transfer substrate. The energy irradiation section changes the tilt of the element relative to the transfer substrate by forming the bubble in the area of the bubble layer where one element is held, i.e., the element holding area, thereby bringing the element closer to the transfer substrate. In this way, while the element is held by the bubble layer, a portion of the element contacts the trapping layer first.
2. The transfer apparatus of claim 1, wherein the aforementioned bubbles shrink over time.
3. The transfer apparatus of claim 1 or 2, wherein the bubble is formed such that the center of the bubble is located in the peripheral portion of the element holding area other than the center.
4. The transfer apparatus of claim 1, wherein at least two of the aforementioned air bubbles are sequentially formed in the holding area of the aforementioned element.
5. The transfer apparatus of claim 4, wherein when large and small bubbles of different volumes are formed in the holding area of the element, the small bubble is formed first, and the large bubble is formed at a position where the distance between the transfer substrate and the element is smaller than the position where the small bubble is formed, while the element is tilted due to the small bubble.
6. The transfer apparatus of claim 4, wherein three or more air bubbles of different volumes are formed in the holding area of the aforementioned element in a manner arranged in volume order.
7. The transfer apparatus of claim 4, wherein large and small bubbles of different volumes are formed in the holding area of the aforementioned element in a manner that they are interconnected, and the large bubble expands toward the substrate to be transferred by the movement of gas in the small bubble into the large bubble.
8. The transfer apparatus of claim 7, wherein the large air bubble and the small air bubble are connected by a thread-like air bubble.
9. A transfer apparatus, characterized in that it transfers an element held on a transfer substrate to a transfer substrate, and has an energy irradiation section that irradiates an active energy line through the transfer substrate toward the element when the transfer substrate and the transfer substrate face each other with the element in between. The transfer substrate has a bubble layer that generates bubbles by irradiation of the active energy line. The element is held on the bubble layer. The transfer substrate has a trapping layer that holds the element and is configured such that the trapping layer faces the transfer substrate. The energy irradiation section forms large and small bubbles of different volumes in the area of the bubble layer where one element is held, i.e., the element holding area, in an interconnected manner. The large bubble expands toward the transfer substrate by the gas moving from the small bubble into the large bubble, thereby bringing the element into contact with the trapping layer while the element is held by the bubble layer.
10. A transfer method, characterized in that it involves transferring an element held on a transfer substrate to a transfer substrate, and includes an energy irradiation step, wherein the energy irradiation step involves irradiating an active energy line from the transfer substrate toward the element while the transfer substrate and the transfer substrate face each other with the element in between, thereby causing the element to peel off from the transfer substrate and move toward the transfer substrate, the transfer substrate having a bubble layer that generates bubbles by irradiation of the active energy line, the element being held in the bubble layer, the transfer substrate having a trapping layer that holds the element and being configured to face the transfer substrate, in the energy irradiation step, by forming the bubble in the area of the bubble layer where one element is held, i.e., the element holding area, the tilt of the element relative to the transfer substrate is changed, causing it to approach the transfer substrate, thereby causing a portion of the element to contact the trapping layer while the element is held in the bubble layer.
11. A transfer method, characterized in that it involves transferring an element held on a transfer substrate to a transfer substrate, and includes an energy irradiation step, wherein the energy irradiation step involves irradiating an active energy line from the transfer substrate toward the element while the transfer substrate and the transfer substrate face each other with the element in between, thereby causing the element to peel off from the transfer substrate and move toward the transfer substrate, the transfer substrate having a bubble layer that generates bubbles by irradiation of the active energy line, the element being held in the bubble layer, the transfer substrate having a trapping layer that holds the element and being configured such that the trapping layer faces the transfer substrate, in the energy irradiation step, large bubbles and small bubbles of different volumes are formed in an interconnected manner in the area of the bubble layer where one element is held, i.e., the element holding area, and the large bubbles expand toward the transfer substrate by the movement of gas in the small bubbles into the large bubbles, thereby causing the element to contact the trapping layer while the element is held in the bubble layer.