Semiconductor process chambers and semiconductor process equipment

Abstract

A semiconductor process chamber and semiconductor process equipment are disclosed. The semiconductor process chamber includes an outer cavity having multiple reaction regions inside. Each reaction region is provided with a reaction chamber, a support device, and a sealing assembly. The bottom end of the reaction chamber has an opening. The support device includes a liftable support shaft and a support portion for supporting wafers. The support shaft is located at the bottom of the support portion and is used to support the support portion. It moves up and down between a process position inside the reaction chamber and a transfer position located below the reaction chamber through the opening. The sealing assembly is located below the support portion and connected to the support device. The support shaft passes through the sealing assembly. The sealing assembly moves up and down with the support shaft and contacts the bottom end of the reaction chamber when the support shaft supports the support portion to rise to the process position, thereby sealing the opening.

Description

Technical Field

[0001] This application relates to the field of semiconductor technology, specifically to a semiconductor process chamber and semiconductor process equipment. Prior Technology

[0002] Plasma Enhanced Atomic Layer Deposition (PEALD) processes have relatively slow deposition rates. Developing process chambers with multiple reaction chambers has become a better solution to improve the throughput of PEALD process equipment.

[0003] An existing process chamber with multiple reaction chambers includes a transfer chamber and multiple reaction regions. Each reaction region is equipped with a reaction chamber, a support device, and a resiliently sealed bellows. The multiple reaction chambers are spaced apart and connected to the transfer chambers. The support device includes a support section and a liftable support shaft. The support section carries the wafer, and the support shaft is located at the bottom of the support section. The support shaft supports the support section as it descends to the transfer position within the transfer chamber or as it rises to the process position within the reaction chamber. When the support section descends to the transfer position, wafer transfer is achieved; when the support section rises to the process position, semiconductor processing of the wafer is achieved. The resiliently sealed bellows... The bellows is located below the support unit and surrounds the support shaft. The bottom of the elastic sealing bellows is connected to the bottom of the transmission chamber. When the support unit descends to the transmission position, the top of the elastic sealing bellows contacts the bottom of the support unit, and the elastic sealing bellows is in a compressed state. As the support unit rises from the transmission position to the process position, the elastic sealing bellows gradually elongates under its own elasticity. When the support unit rises to the process position, the top of the elastic sealing bellows contacts the bottom of the reaction chamber, sealing the reaction chamber and preventing multiple reaction chambers from communicating with each other through the transmission chamber, thus avoiding mutual interference of the airflow fields of multiple reaction chambers.

[0004] However, in actual use, because the top of the elastic sealing bellows comes into contact with the bottom of the reaction chamber during semiconductor processing, the bellows is subjected to the high temperature of the reaction chamber for a long time, causing the elasticity of the bellows to gradually decrease. Furthermore, the elasticity of the bellows also gradually decreases during frequent compression and elongation. Due to the elasticity of the bellows, at the moment the top of the bellows separates from the bottom of the reaction chamber, the bellows will exhibit irregular jumping, which may affect contamination particles in the process chamber and may even cause wafer slippage. In addition, the elastic sealing bellows cannot be used for high-temperature processes of 550°C and above. All of these factors lead to a reduction in the sealing effect of the elastic sealing bellows, poor sealing stability, and consequently, poor operational stability of the semiconductor process chamber and semiconductor process equipment. Summary of the Invention

[0005] This application aims to solve at least one of the technical problems existing in the prior art, and proposes a semiconductor process chamber and semiconductor process equipment, which can improve the sealing stability of the sealing components and improve the operational stability of the semiconductor process chamber and semiconductor process equipment.

[0006] To achieve the purpose of this application, a semiconductor process chamber is provided, including an outer cavity, the outer cavity having multiple reaction regions, each reaction region being provided with a reaction chamber, a support device, and a sealing assembly; wherein:

[0007] The reaction chamber has an opening at its bottom.

[0008] The carrier device includes a carrier section and a liftable support shaft. The carrier section is used to carry the wafer, and the support shaft is located at the bottom of the carrier section to support the carrier section and moves up and down between the process position in the reaction chamber and the transfer position located below the reaction chamber through the opening.

[0009] The sealing assembly is located below the support portion and connected to the support device, and the support shaft passes through the sealing assembly. The sealing assembly is used to rise and fall with the support shaft, and when the support shaft supports the support portion to rise to the process position, it contacts the bottom end of the reaction chamber to seal the opening.

[0010] In some embodiments, the sealing assembly is connected to the support shaft.

[0011] In some embodiments, the support shaft is provided with an assembly portion that surrounds the support shaft;

[0012] The sealing assembly includes a connecting component and an annular sealing body;

[0013] The sealing body surrounds the support shaft, the sealing body is used to seal the opening, and the sealing body has an annular assembly space surrounding the support shaft for accommodating the assembly portion;

[0014] The connecting component is used to connect the sealing assembly to the support shaft by connecting the sealing body and the assembly.

[0015] In some embodiments, a predetermined gap exists between the sealing body and the support portion.

[0016] In some embodiments, the sealing body includes: an annular first sealing plate, an annular second sealing plate located on the side of the first sealing plate opposite to the support portion and disposed separately from the first sealing plate, and a sidewall located between the first sealing plate and the second sealing plate;

[0017] The first sealing plate is used to seal the opening;

[0018] The sidewall connects the first sealing plate and the second sealing plate to form the assembly space between the first sealing plate, the second sealing plate and the sidewall, and the assembly opening of the assembly space faces the outer peripheral surface of the support shaft.

[0019] In some embodiments, the first sealing plate has a gas channel inside, and the side of the first sealing plate facing the support portion has a plurality of first air outlets extending through the gas channel, and the inner circumferential surface of the first sealing plate has a first air inlet communicating with the gas channel;

[0020] The support shaft is provided with an air inlet channel, and the support shaft has a second air outlet at a position opposite to the inner ring surface of the first sealing plate, so that the gas in the air inlet channel is sequentially transported to the preset gap between the sealing body and the bearing part through the second air outlet, the first air inlet, the gas channel and the first air outlet.

[0021] In some embodiments, the gas passage includes a plurality of branch passages distributed circumferentially along the first sealing plate and a main passage communicating with all of the plurality of branch passages;

[0022] The main airway is annular, and multiple branch airways are arranged around the main airway, with each branch airway extending radially along the first sealing plate;

[0023] The first air intake is connected to the main air passage.

[0024] In some embodiments, the supporting device further includes a plurality of support columns that extend through the supporting portion and are liftable;

[0025] The first sealing plate also has a through hole through which each of the support columns passes, and the orthographic projection of the through hole on the bearing portion coincides with the orthographic projection of the first vent hole on the bearing portion.

[0026] In some embodiments, the radial dimension of the first air inlet gradually decreases from the end of the first air inlet near the support shaft to the end of the first air inlet away from the support shaft.

[0027] In some embodiments, the sealing assembly further includes a first seal. The sealing body is provided with an assembly groove, which is disposed on the side of the sealing body facing the bottom of the reaction chamber and is arranged circumferentially along the sealing body. The first seal is annular and is assembled in the assembly groove. The first seal is used to contact the bottom of the reaction chamber when the support shaft supports the bearing portion to rise to the process position, thereby sealing the opening by sealing the sealing body and the bottom of the reaction chamber.

[0028] In some embodiments, the radial dimension of the opening of the assembly groove is smaller than the radial dimension of the bottom of the assembly groove.

[0029] In some embodiments, the side of the sealing body facing the support portion is arc-shaped, and the distance between the side of the sealing body facing the support portion and the support portion gradually increases from the center to the edge of the side of the sealing body facing the support portion.

[0030] In some embodiments, the connecting component is also used to adjust the axial spacing between the sealing body and the assembly on the support shaft.

[0031] In some embodiments, the connecting component includes an external threaded component, a middle threaded component, and an internal threaded component. The external threaded component has a first external thread and a first internal thread, and the thread direction of the first external thread is opposite to that of the first internal thread. The external threaded component penetrates the sealing body into the assembly space and engages with the sealing body through the first external thread. The middle threaded component has a second external thread, penetrates the interior of the external threaded component, and engages with the first internal thread through the second external thread. The internal threaded component has a third external thread, penetrates the interior of the middle threaded component, and engages with the assembly part through the third external thread.

[0032] In some embodiments, the pitch of the first external thread is greater than the pitch of the first internal thread.

[0033] In some embodiments, the connecting component further includes a support reinforcement member, which is annular and disposed along the inner circumference of the threaded member and fixedly connected to the threaded member. One end of the support reinforcement member abuts against the assembly portion, and the other end abuts against the head of the internal threaded member.

[0034] In some embodiments, the number of connecting components is multiple, and the multiple connecting components are spaced apart in the circumferential direction of the sealing body.

[0035] This application also provides a semiconductor manufacturing apparatus, including a wafer transfer device and the semiconductor manufacturing chamber as provided in this application. The wafer transfer device is located in the outer cavity and is used to pick up and place wafers onto the carrier when each of the carriers is in the transfer position.

[0036] This application has the following beneficial effects:

[0037] The semiconductor process chamber provided in this application connects a sealing component for each reaction region to a support device for each reaction region. This allows the sealing component to rise and fall with the support shaft. When the support shaft supports the support portion to the process position, the sealing component contacts the bottom of the reaction chamber to seal the opening at the bottom. This prevents interference between multiple reaction chambers during semiconductor processing, allowing them to operate independently. This improves the consistency and stability of semiconductor processing of wafers within multiple reaction chambers. Because the sealing component is connected to the support device and rises and falls with the support shaft, it eliminates the need for elastic expansion and contraction compared to existing technologies. This avoids problems caused by reduced elasticity, irregular movement, and unsuitability for high-temperature processes (e.g., 550°C and above) caused by existing elastic bellows. This enhances the sealing stability of the sealing component and improves the operational stability of the semiconductor process chamber and semiconductor process equipment.

[0038] The semiconductor process equipment provided in this application, by utilizing the semiconductor process chamber provided in this application, can avoid mutual interference between multiple reaction chambers during semiconductor processing, enabling multiple reaction chambers to operate independently. This improves the consistency and stability of semiconductor processing of wafers within multiple reaction chambers. Furthermore, it avoids problems caused by reduced elasticity, irregular vibration, and inapplicability to high-temperature processes (e.g., 550°C and above) of the elastic bellows, thereby improving the sealing stability of the sealing components and enhancing the operational stability of the semiconductor process chamber and the semiconductor process equipment. Simple Explanation of the Diagram

[0039] When read in conjunction with the accompanying drawings, the following detailed description is the best way to understand the nature of this disclosure. It should be noted that, according to standard industry practice, the various components are not drawn to scale. In fact, the dimensions of the various components may be arbitrarily increased or decreased for clarity of explanation. Figure 1 is a schematic diagram of the structure of the process chamber where the support part is located in the process position according to an embodiment of this application; Figure 2 is a schematic diagram of the structure of the process chamber provided in this application when the carrier part is located at the transmission position; Figure 3 is a top-view three-dimensional structural diagram of the external cavity provided in an embodiment of this application; Figure 4 is an enlarged structural schematic diagram of the reaction chamber when the carrier part is located at the process position according to the embodiment of this application; Figure 5 is an enlarged structural schematic diagram of the sealing assembly and the sealing point of the reaction chamber provided in the embodiment of this application; Figure 6 is a three-dimensional structural diagram of the support shaft provided in an embodiment of this application; Figure 7 is a schematic front sectional view of the support shaft provided in an embodiment of this application; Figure 8 is a three-dimensional structural schematic diagram of the sealing assembly provided in an embodiment of this application; Figure 9 is a three-dimensional structural diagram of the connecting parts provided in an embodiment of this application; Figure 10 is a bottom-view perspective view of the sealing assembly and support shaft provided in an embodiment of this application; Figure 11 is a three-dimensional cross-sectional view of the connecting parts provided in an embodiment of this application; Figure 12 is a top cross-sectional view of the connecting parts provided in an embodiment of this application; Figure 13 is a partial front sectional view of the sealing body provided in an embodiment of this application; Figure 14 is a three-dimensional cross-sectional view of the flow-equalizing ring provided in an embodiment of this application; Figure 15 is a three-dimensional cross-sectional view of the lower exhaust ring provided in an embodiment of this application; Figure 16 is a front cross-sectional view of the connecting components provided in the embodiment of this application, which are respectively connected to the sealing body and the assembly part; Figure 17 is a three-dimensional structural diagram of the connecting component provided in an embodiment of this application; Figure 18 is a schematic diagram of the front cross-sectional structure of the connecting component provided in an embodiment of this application. Implementation

[0040] The following disclosure provides numerous different embodiments or instances of various components for implementing this disclosure. Specific examples of components and configurations are described below to simplify this disclosure. Of course, these are merely examples and not intended to be limiting. For example, in the following description, a first component formed above or on a second component may include embodiments in which the first and second components are formed in direct contact, and may also include embodiments in which an additional component may be formed between the first and second components such that the first and second components are not in direct contact. Furthermore, reference numerals and / or letters may be repeated in various instances of this disclosure. This repetition is for simplicity and clarity and does not in itself indicate a relationship between the various embodiments and / or configurations discussed.

[0041] Furthermore, for ease of description, spatial relative terms such as "below," "below," "down," "above," "up," and similar terms may be used herein to describe the relationship between one element or component and another element or component(s), as illustrated in the figures. Spatial relative terms are intended to cover different orientations of the device in use or operation other than those depicted in the figures. The device may be oriented in other ways (rotated 90 degrees or otherwise) and therefore the spatial relative descriptive terms used herein may be interpreted in the same way.

[0042] Although the numerical ranges and parameters stated in this disclosure are approximate, the values ​​stated in specific examples are reported as precisely as possible. However, any numerical value inherently contains some error due to the standard deviations found in the respective test measurements. Furthermore, as used herein, the term "approximately" generally means within 10%, 5%, 1%, or 0.5% of a given value or range. Alternatively, the term "approximately" means within one acceptable standard error of the average when considered by a person skilled in the art. Except in operational / working examples, or unless otherwise expressly specified, all numerical ranges, quantities, values, and percentages such as the quantity of material disclosed herein, duration of time, temperature, operating conditions, ratios of quantities, and the like should be understood to be modified by the term "approximately" in all examples. Accordingly, unless indicated to the contrary, the numerical parameters stated in this disclosure and the appended claims are approximate values ​​that may vary as needed. At a minimum, each numerical parameter should be interpreted based on the number of significant digits reported and by applying common rounding techniques. Ranges may be expressed herein as from one endpoint to another or between two endpoints. All ranges disclosed herein include endpoints unless otherwise specified.

[0043] As shown in Figures 1 and 2, this embodiment of the application provides a semiconductor process chamber, including an outer cavity 1, which has multiple reaction regions (two reaction regions are shown as examples in Figures 1 and 2). Each reaction region is provided with a reaction chamber 2, a support device 3, and a sealing assembly 4. The reaction chamber 2 has an opening at its bottom. The support device 3 includes a support part 31 and a liftable support shaft 32. The support part 31 is used to support the wafer, and the support shaft 32 is located at the bottom of the support part 31 to support the support part 31. The support shaft 32 moves up and down between the process position of the reaction chamber 2 and the transfer position located below the reaction chamber 2 through the opening. The sealing assembly 4 is located below the support part 31 and connected to the support device 3. The support shaft 32 passes through the sealing assembly 4. The sealing assembly 4 moves up and down with the support shaft 32. When the support shaft 32 supports the support part 31 to rise to the process position, it contacts the bottom of the reaction chamber 2 to seal the opening, so that a sealed space is formed between the sealing assembly 4 and the reaction chamber 2.

[0044] The semiconductor process chamber provided in this application embodiment connects the sealing component 4 provided in each reaction region to the support device 3 provided in each reaction region. This allows the sealing component 4 to rise and fall with the support shaft 32. When the support shaft 32 supports the support part 31 to the process position, the sealing component 4 can contact the bottom end of the reaction chamber 2 to seal the opening at the bottom end of the reaction chamber 2. This avoids mutual interference between multiple reaction chambers 2 in the semiconductor process, allowing multiple reaction chambers 2 to operate independently. This improves the consistency and stability of semiconductor processing of wafers in multiple reaction chambers 2. Since the sealing component 4 is connected to the support device 3 and can rise and fall with the support shaft 32, compared with the prior art, the sealing component 4 does not need to have its own elastic expansion and contraction function. That is, it does not need to use the elastic sealing bellows of the prior art. This avoids the problems caused by the reduced elasticity, irregular jumping, and inapplicability to high-temperature processes (e.g., 550°C and above) of the elastic bellows. This improves the sealing stability of the sealing component 4 and enhances the operational stability of the semiconductor process chamber and semiconductor process equipment.

[0045] In some embodiments, the sealing component 4 is disposed below the support portion 31 and fixed relative to the support shaft 32 so that it can rise and fall with the support shaft 32. The sealing component 4 is used to contact the bottom end of the reaction chamber 2 when the support shaft 32 supports the support portion 31 to rise to the process position, so as to seal the opening and form a sealed space between the sealing component 4 and the reaction chamber 2.

[0046] For example, as shown in Figures 1 to 3, the outer cavity 1 can have four reaction zones. The number of reaction chambers 2, the number of support devices 3, and the number of sealing components 4 can all be four. Each reaction zone can be provided with one reaction chamber 2, one support device 3, and one sealing component 4. In some embodiments, as shown in Figure 3, a wafer transfer port 12 can be provided on one side wall of the outer cavity 1, and a rotatable wafer transfer device 11 can be provided inside the outer cavity 1. The wafer transfer device 11 can have four transfer sections 111. In some embodiments, the support shaft 32 can be connected to a lifting drive source 81, which provides lifting drive force to drive the support shaft 32 to move up and down.

[0047] During the semiconductor manufacturing process, a robotic arm outside the outer cavity 1 can transfer wafers into the outer cavity 1 through the wafer transfer port 12. At this time, all four carrier parts 31 can be located at the transfer position. At this time, each support post 71 is higher than the carrier part 31. The wafer transfer device 11 can rotate to position each transfer part 111 in sequence at the position corresponding to the wafer transfer port 12, so as to receive the wafers transferred from the robotic arm outside the outer cavity 1 to the outer cavity 1 through the wafer transfer port 12. Then, by rotating, the transfer part 111 carrying the wafer is rotated to above the corresponding carrier part 31. Then, by lowering each transfer part 111, the wafers carried are transferred to each support post 71 and supported by each support post 71. Subsequently, the lifting drive source 81 can provide lifting driving force to drive the support shaft 32 to rise. The support shaft 32 supports the carrier part 31 to rise through the opening to the process position inside the reaction chamber 2 (as shown in Figure 1). During the process of the carrier part 31 rising from the transfer position to the process position, the carrier part 31 will lift the wafers on each support column 71 and support the wafers to rise to the process position. The sealing component 4 can rise with the support shaft 32 and contact the bottom end of the reaction chamber 2 when the carrier part 31 rises to the process position to seal the opening and achieve the sealing of the reaction chamber 2. This allows the wafer to be processed in a sealed environment, thereby avoiding mutual interference between multiple reaction chambers 2 in the semiconductor process, enabling multiple reaction chambers 2 to operate independently, and thus improving the consistency and stability of semiconductor processes (e.g., film deposition) of wafers in multiple reaction chambers 2.

[0048] After the semiconductor manufacturing process is completed, the lifting drive source 81 can provide a downward driving force to drive the support shaft 32 to descend. The support shaft 32 supports the carrier part 31 to descend through the opening to the transfer position located below the reaction chamber 2 (as shown in Figure 2). During the process of the carrier part 31 descending from the manufacturing position to the transfer position, the sealing assembly 4 can descend with the support shaft 32, thereby separating from the bottom end of the reaction chamber 2 and canceling the seal on the reaction chamber 2. When the carrier part 31 descends to the transfer position, each support column 71 is higher than the carrier part 31 to support the wafer that has completed the manufacturing process on the carrier part 31. Then, the wafer is transferred. The device 11 can rotate to position the four transfer sections 111 between the four support sections 31 and the wafers supported by the support columns 71. Then, by raising the transfer sections 111, the four wafers are transferred from the support columns 71 to the four transfer sections 111. The wafer transfer device 11 can then rotate to position the transfer sections 111 sequentially at the positions corresponding to the wafer transfer ports 12, so that the robot arm inside the outer cavity 1 can remove the wafers from the transfer sections 111 corresponding to the wafer transfer ports 12. After that, the robot arm can transfer the four wafers sequentially from the outer cavity 1 through the wafer transfer ports 12 to the outside of the process chamber.

[0049] It should be noted that the number of reaction zones, reaction chambers 2, support devices 3, sealing components 4, and transmission units 111 is not limited to four. For example, the number of reaction zones, reaction chambers 2, support devices 3, sealing components 4, and transmission units 111 can all be two, three, five, or more.

[0050] In some embodiments, the number of lifting drive sources 81 can be the same as the number of support shafts 32, and the lifting drive sources 81 can be arranged in a one-to-one correspondence with the support shafts 32. In this way, each lifting drive source 81 can drive the corresponding bearing part 31 to rise and fall independently, thereby improving the flexibility of controlling the rise and fall of each bearing part 31.

[0051] In some embodiments, the lifting drive source 81 can be disposed outside the outer cavity 1 and located below the outer cavity 1, and the support shaft 32 can pass through the bottom of the outer cavity 1 and be connected to the lifting drive source 81, and the support shaft 32 can be raised and lowered relative to the outer cavity 1.

[0052] In some embodiments, a drive source 82 may be provided outside the outer cavity 1. The wafer transfer device 11 can pass through the bottom of the outer cavity 1 and be connected to the drive source 82. The wafer transfer device 11 can rotate and move up and down relative to the outer cavity 1. The drive source 82 is used to provide rotational driving force and lifting driving force to the wafer transfer device 11 so as to drive the wafer transfer device 11 to rotate and move up and down within the outer cavity 1.

[0053] As shown in Figures 1, 2 and 4, in one embodiment of this application, the sealing component 4 can be connected to the support shaft 32.

[0054] In other words, by connecting the sealing component 4 to the support shaft 32, the sealing component 4 can be positioned below the bearing portion 31 and fixed relative to the support shaft 32, so that the sealing component 4 can rise and fall with the support shaft 32.

[0055] As shown in Figures 1, 2, 4, 6, and 7, in one embodiment of this application, the support shaft 32 passes through the sealing assembly 4. Specifically, the support shaft 32 may be provided with an assembly portion 324, which surrounds the support shaft 32; the sealing assembly 4 may include a connecting member 6 and an annular sealing body; the sealing body surrounds the support shaft 32, is used to seal the opening, and has an annular assembly space 436 surrounding the support shaft 32 and used to accommodate the assembly portion 324; the connecting member 6 is used to connect the sealing assembly 4 and the support shaft 32 by connecting the sealing body and the assembly portion 324.

[0056] In other words, the sealing body surrounds the support shaft 32, and the assembly part 324 surrounding the support shaft 32 is accommodated in the assembly space 436 of the sealing body. The connecting part 6 can connect the sealing body and the assembly part 324. The connection between the sealing body and the assembly part 324 can realize the connection between the sealing assembly 4 and the support shaft 32. The sealing opening of the sealing assembly 4 can be achieved by sealing the opening of the sealing body.

[0057] In some embodiments, when the sealing body seals the opening, there is a preset gap between the sealing body and the support portion 31. This design allows the support portion 31 to heat the wafer after the sealing body seals the opening and the support portion 31 rises to the process position. For example, the support portion 31 can heat the wafer to 550°C. By having a preset gap between the sealing body and the support portion 31 when sealing the opening, the heat transferred from the support portion 31 to the sealing body can be reduced, thereby reducing the probability of the sealing body being damaged due to high temperature. This can improve the service life of the sealing assembly 4, improve the stability of the sealing assembly 4 in sealing the reaction chamber 2, and further improve the stability of the semiconductor process chamber and the stability of the semiconductor process.

[0058] As shown in Figures 9-12, in some embodiments, the sealing body may include a connector 42 and multiple connecting parts 43, each connecting part 43 being arc-shaped, the multiple connecting parts 43 being combined into a ring, the connector 42 being ring-shaped, and the multiple connecting parts 43 being connected through the connector 42.

[0059] As shown in Figures 8 and 10, for example, there can be two connecting parts 43. Each connecting part 43 is semi-circular. The two connecting parts 43 are located opposite each other on both sides of the support shaft 32. The two connecting parts 43 are combined into a ring. The connecting body 42 is also ring-shaped and is connected to the two connecting parts 43 respectively, thereby connecting the two connecting parts 43 together.

[0060] However, the number of connecting parts 43 is not limited to this; for example, the number of connecting parts 43 can be three or more. The shape of the combination of connecting parts 43 and the shape of the connecting body 42 are not limited to this.

[0061] As shown in Figures 4, 5, 8, 9, 11-13 and 16, in one embodiment of this application, the sealing body may include: an annular first sealing plate 451, an annular second sealing plate 452 located on the side of the first sealing plate 451 away from the bearing portion 31 and isolated from the first sealing plate 451, and a sidewall 453 located between the first sealing plate 451 and the second sealing plate 452; the first sealing plate 451 is used to seal the opening, and the sidewall 453 connects the first sealing plate 451 and the second sealing plate 452 to form an assembly space 436 between the first sealing plate 451, the second sealing plate 452 and the sidewall 453, and the assembly opening of the assembly space 436 faces the outer peripheral surface of the support shaft 32.

[0062] In other words, the first sealing plate 451 and the second sealing plate 452 are positioned opposite each other and spaced apart. A sidewall 453 is positioned between the first sealing plate 451 and the second sealing plate 452. Both the first sealing plate 451 and the second sealing plate 452 are annular to surround the support shaft 32. The sidewall 453 is annular and positioned circumferentially around the first sealing plate 451 and the second sealing plate 452. The annular assembly space 436 can be formed by the space between the first sealing plate 451, the second sealing plate 452, and the sidewall 453. The support shaft 32 can pass through the assembly opening of the assembly space 436 to achieve the penetration of the sealing assembly 4. The sealing opening of the sealing body can be achieved by sealing the opening through the first sealing plate 451.

[0063] As shown in Figures 4 to 9 and Figures 11 to 13, in one embodiment of this application, the interior of the first sealing plate 451 may have a gas channel, and the side of the first sealing plate 451 facing the support part 31 has a plurality of first air outlets 434 extending through the gas channel. The inner ring surface of the first sealing plate 451 has a first air inlet 435 communicating with the gas channel. The support shaft 32 is provided with an air inlet channel 321, and the support shaft 32 may have a second air outlet 323 at a position opposite to the inner ring surface of the first sealing plate 451, so that the gas in the air inlet channel 321 is sequentially transported to the preset gap between the sealing body and the support part 31 through the second air outlet 323, the first air inlet 435, the gas channel and the first air outlet 434.

[0064] In other words, the first sealing plate 451 is provided with a gas channel, a first air inlet 435, and multiple first air outlets 434. The gas channel is located inside the first sealing plate 451. One end of the first air inlet 435 is located on the inner ring surface of the first sealing plate 451, and the other end is connected to the gas channel. One end of the first air outlet 434 is located on the side of the first sealing plate 451 facing the bearing part 31, and the other end is connected to the gas channel. The support shaft 32 is provided with an air inlet channel 321 and a second air outlet 323. The air inlet channel 321 is located inside the support shaft 32. One end of the second air outlet 323 is connected to the air inlet channel 321, and the other end is opposite to the end of the first air inlet 435 located on the inner ring surface of the first sealing plate 451. In practical applications, the gas in the intake channel 321 can first enter the second exhaust port 323, then enter the first intake port 435 through the second exhaust port 323, then enter the gas channel through the first intake port 435, then enter multiple first exhaust ports 434 through the gas channel, and then enter the aforementioned preset gap through multiple first exhaust ports 434.

[0065] This design is because, during the semiconductor manufacturing process, the reactive gas used for the semiconductor process in the reaction chamber 2 may flow downwards towards the support portion 31 and accumulate and deposit on the lower surface of the support portion 31. This can lead to the generation of particles in the reaction chamber 2 during the semiconductor manufacturing process, affecting the semiconductor manufacturing process. By supplying gas to the aforementioned preset gap, the preset gap can be made to have a certain pressure to form a stable environment, thereby reducing the possibility of reactive gas flowing downwards towards the support portion 31. This can reduce the particles generated in the reaction chamber 2 due to the accumulation and deposition of reactive gas, thereby improving the semiconductor manufacturing process.

[0066] In some embodiments, the gas may include nitrogen or an inert gas.

[0067] As shown in Figure 7, in some embodiments, the support shaft 32 may also be provided with an air inlet 322, one end of which is connected to the air intake channel 321 and the other end is connected to the air source.

[0068] In practical applications, a gas source can provide gas. The gas source can be located outside the outer cavity 1 and below the outer cavity 1 to avoid the gas source affecting the environment inside the semiconductor process chamber. The gas provided by the gas source can first enter the air inlet 322 and then enter the air intake channel 321 through the air inlet 322.

[0069] As shown in Figures 1 and 2, in some embodiments, the air inlet 322 can be connected to an air source via an external air pipe 83.

[0070] As shown in Figures 4, 5, 8, 9, 11, 12, and 13, in one embodiment of this application, the gas channel may include a plurality of branch air channels 433 distributed circumferentially along the first sealing plate 451 and a main air channel 432 that is connected to the plurality of branch air channels 433; the main air channel 432 is annular, and the plurality of branch air channels 433 are arranged around the main air channel 432, each branch air channel 433 extending radially along the first sealing plate 451; the first air inlet 435 is connected to the main air channel 432.

[0071] In practical applications, multiple first air outlets 434 can be distributed along the extension direction of each branch 433. The end of each first air outlet 434 that communicates with the gas channel can be connected to the branch 433. That is, the connection between the first air outlet 434 and the gas channel can be achieved by connecting with the branch 433. In this way, the gas through the first air inlet 435 can first enter the main air channel 432, then enter multiple branch 433 through the main air channel 432, then enter multiple first air outlets 434 through the multiple branch 433, and then enter the preset gap through the multiple first air outlets 434. In other words, the gas in the first air inlet 435 can be transported to the preset gap in sequence through the main air channel 432, multiple branch 433, and multiple first air outlets 434.

[0072] In some embodiments, the plurality of branch channels 433 may be evenly spaced along the arc of the connecting section 43. This can improve the uniformity of the gas delivered to the preset gap.

[0073] In some embodiments, a plurality of first air outlets 434 may be evenly spaced along the extension direction of the branch air passage 433. This can improve the uniformity of the gas delivered to the preset gap.

[0074] As shown in Figures 1, 2, 4 and 8, in one embodiment of this application, the supporting device 3 may further include a plurality of support columns 71 that penetrate the supporting part 31 and are liftable; the first sealing plate 451 also has a through hole 437 through which each support column 71 passes, and the orthographic projection of the through hole 437 on the supporting part 31 coincides with the orthographic projection of the first vent hole 434 on the supporting part 31.

[0075] In practical applications, when the carrier portion 31 descends to the transfer position, the tops of the multiple support pillars 71 can protrude relative to the top surface of the carrier portion 31. This allows the wafer to be placed on the support pillars 71 after it has been transferred above the carrier portion 31. Subsequently, the carrier portion 31 rises, lifting the wafer on the support pillars 71, and continues to rise to the process position, carrying the support pillars 71 with it. After the semiconductor process is complete, the carrier portion 31 descends, carrying the support pillars 71 with it. During the descent to the transfer position, the support pillars 71 gradually rise relative to the carrier portion 31 until their tops protrude relative to the top surface of the carrier portion 31, thus lifting the wafer on the carrier portion 31. The wafer can then be removed from the support pillars 71.

[0076] In some embodiments, the support post 71 may be a pin.

[0077] As shown in Figure 7, in some embodiments, the support portion 31 may be provided with a plurality of through holes 311, and the plurality of through holes 311 and the plurality of through holes 437 are provided in a one-to-one correspondence, and the corresponding through holes 311 and through holes 437 are used for the support column 71 to pass through.

[0078] In some embodiments, the through-hole 437 may penetrate the bronchus 433.

[0079] As shown in Figures 1 and 2, in some embodiments, a plurality of support members 72 are provided at the bottom inside the outer cavity 1. The plurality of support members 72 are distributed at intervals along a circumference and are provided in a one-to-one correspondence with a plurality of support columns 71.

[0080] In practical applications, when the carrier 31 is in the transmission position, the multiple support columns 71 can be supported one-to-one by the multiple support members 72, so that the top of the multiple support columns 71 can protrude relative to the top surface of the carrier 31. When the carrier 31 descends from the process position to the point where the multiple support columns 71 abut against the support members 72, during the process of the carrier 31 continuing to descend, the multiple support columns 71 are supported by the support members 72 and no longer descend with the carrier 31. The multiple support columns 71 gradually rise relative to the carrier 31 until the top of the multiple support columns 71 protrudes relative to the top surface of the carrier 31.

[0081] In one embodiment of this application, the material of the support column 71 and the material of the support member 72 can both be ceramic.

[0082] This can prevent the materials of the support column 71 and the support component 72 from contaminating the environment inside the semiconductor process chamber, and can also prevent the support component 72 from developing dents due to repeated impacts from the support column 71, thereby improving the service life of the support component 72.

[0083] In one embodiment of this application, the radial dimension of the first air inlet 435 can gradually decrease from the end of the first air inlet 435 near the support shaft 32 to the end of the first air inlet 435 away from the support shaft 32.

[0084] In other words, the radial dimension of the end of the first air inlet 435 near the support shaft 32 is greater than the radial dimension of the end of the first air inlet 435 away from the support shaft 32, and the radial dimension of the first air inlet 435 can gradually decrease from the end of the first air inlet 435 near the support shaft 32 to the end of the first air inlet 435 away from the support shaft 32, resembling a trumpet shape. This allows the first air inlet 435 to have a larger range for the gas flowing out through the second air outlet 323 to enter, thereby making it easier for the gas flowing out through the second air outlet 323 to enter the first air inlet 435.

[0085] In one embodiment of this application, as shown in Figures 4 and 5, the sealing assembly 4 may further include a first sealing element (not shown in the figures). The sealing body is provided with an assembly groove 41, which is disposed on the side of the sealing body facing the bottom of the reaction chamber 2 and is arranged circumferentially along the sealing body. The first sealing element is annular and is assembled in the assembly groove 41. The first sealing element is used to contact the bottom of the reaction chamber 2 when the support shaft 32 supports the bearing part 31 to rise to the process position, thereby sealing the opening by sealing the bottom of the sealing body and the reaction chamber 2.

[0086] In other words, when the support shaft 32 supports the bearing portion 31 and rises to the process position, the first seal can contact the bottom end of the reaction chamber 2, sealing the area between the sealing body and the bottom end of the reaction chamber 2. By sealing the area between the sealing body and the bottom end of the reaction chamber 2 with the first seal, the opening can be sealed, thereby enabling the sealing assembly 4 to seal the opening. The first seal can be confined in the assembly groove 41, thus preventing the first seal from moving freely on the side of the sealing body facing the bottom end of the reaction chamber 2. This improves the stability of the first seal in sealing the area between the sealing body and the bottom end of the reaction chamber 2, and also improves the stability of the sealing assembly 4 in sealing the opening.

[0087] In some embodiments, as shown in Figures 4 and 5, an annular protrusion 451a may be provided on the sealing body. The annular protrusion 451a is annular and arranged along the circumference of the sealing body. The annular protrusion 451a and the connector 42 may serve as the annular side walls of the assembly groove 41.

[0088] In some embodiments, as shown in Figures 5 and 9, the outer diameter of the connecting body 42 may be smaller than the outer diameter of the connecting body 43. The connecting body 42 may be provided with a connecting through hole 421, and the connecting body 43 may be provided with a threaded connecting hole 431. A threaded connector (not shown in the figure) passes through the connecting through hole 421 and is threadedly connected to the threaded connecting hole 431, so that the connecting body 42 and the connecting body 43 can be connected through the threaded connector.

[0089] In some embodiments, the connecting through hole 421 can be a countersunk hole. This can prevent the threaded connector from protruding relative to the connecting through hole 421 and interfering with the bottom end of the reaction chamber 2, thus affecting the contact between the first seal and the bottom end of the reaction chamber 2. This can improve the stability of the first seal in sealing the bottom end of the sealing body and the reaction chamber 2, and further improve the stability of the sealing assembly 4 in sealing the opening.

[0090] In some embodiments, the first seal may be a flexible sealing ring.

[0091] As shown in Figures 4 and 5, in some embodiments, the air duct 433 may extend to a position close to the inside of the threaded connection hole 431.

[0092] As shown in Figures 11 to 13, in some embodiments, the air duct 433 may extend below the mounting groove 41 where the first seal is located. Furthermore, the air duct 433 may also extend to the outer peripheral edge of the connecting split body 43.

[0093] As shown in Figure 13, in some embodiments, the branch duct 433 can extend below the assembly groove 41, allowing it to extend below the first seal. This enables gas to flow below the first seal, cooling it during the semiconductor manufacturing process. This reduces the likelihood of seal failure due to high temperatures and extends the lifespan of the first seal, improving its stability in sealing the bottom of the sealing body and reaction chamber 2, and consequently enhancing the sealing stability of the sealing assembly 4. It should be noted that the portion of the branch duct 433 below the first seal may not have a first vent 434. Furthermore, the threaded connection hole 431 can extend from the bottom of the branch duct 433 to the lower surface of the connecting body 43. In this case, a threaded connector (not shown) passes through the connecting through hole 421 and the branch duct 433, threadedly connecting to the threaded connection hole 431, allowing the connecting body 42 and the connecting body 43 to be connected via the threaded connector.

[0094] As shown in Figure 5, in one embodiment of this application, the radial dimension of the opening of the assembly groove 41 can be smaller than the radial dimension of the bottom of the assembly groove 41.

[0095] This design is because, in practical applications, the first seal may stick to the bottom of the reaction chamber 2 due to the high temperature. By making the radial dimension of the opening of the assembly groove 41 smaller than the radial dimension of the bottom of the assembly groove 41, the first seal can be confined in the assembly groove 41 by means of the smaller opening of the assembly groove 41. This reduces the possibility that the first seal may be pulled out of the assembly groove 41 due to sticking to the bottom of the reaction chamber 2, thereby improving the stability of the first seal in sealing between the sealing body and the bottom of the reaction chamber 2, and improving the stability of the sealing assembly 4 in sealing the opening.

[0096] In some embodiments, the radial dimension of the assembly groove 41 may gradually increase from the opening of the assembly groove 41 to the opening of the assembly groove 41.

[0097] As shown in Figures 4, 5 and 13, in one embodiment of this application, the side of the sealing body facing the support portion 31 can be arc-shaped, and the distance between the side of the sealing body facing the support portion 31 and the support portion 31 gradually increases from the center to the edge of the side of the sealing body facing the support portion 31.

[0098] This allows the gas entering the preset gap to flow from the center to the edge of the preset gap, preventing the gas from accumulating in the center of the preset gap, thus enabling the gas entering the preset gap to be quickly discharged from the edge of the reaction chamber 2.

[0099] In one embodiment of this application, the connecting component 6 may also be used to adjust the distance between the sealing body and the assembly part 324 in the axial direction of the support shaft 32.

[0100] This design is due to the fact that in practical applications, depending on the requirements of the semiconductor manufacturing process, the support portion 31 may need to be located at different heights within the reaction chamber 2. In other words, the support portion 31 may need to be located at different process positions. By adjusting the distance between the sealing body and the assembly portion 324 along the support shaft 32 using the connecting component 6, the distance between the sealing body and the support portion 31 can be adjusted. This ensures that even when the height of the process position where the support portion 31 needs to be located changes, the sealing body can still contact the bottom of the reaction chamber 2 to seal the opening. For example, when the height of the process position where the support portion 31 needs to be located increases, the distance between the sealing body and the support portion 31 can be increased to ensure that the sealing body still contacts the bottom of the reaction chamber 2 to seal the opening. When the height of the process position where the support portion 31 needs to be located decreases, the distance between the sealing body and the support portion 31 can be decreased to ensure that the sealing body still contacts the bottom of the reaction chamber 2 to seal the opening.

[0101] Furthermore, in one embodiment of this application, by making the radial dimension of the first air inlet 435 gradually decrease from the end of the first air inlet 435 near the support shaft 32 to the end of the first air inlet 435 away from the support shaft 32, it is similar to a trumpet shape. In this way, when the sealing body moves along the axial direction of the support shaft 32, the first air inlet 435 can still be opposite to the second air outlet 323.

[0102] As shown in Figures 16-18, in one embodiment of this application, the connecting component 6 may include an external threaded component 61, a middle threaded component 62, and an internal threaded component 63. The external threaded component 61 has a first external thread and a first internal thread, and the thread direction of the first external thread is opposite to that of the first internal thread. The external threaded component 61 penetrates the sealing body into the assembly space 436 and is threadedly engaged with the sealing body through the first external thread. The middle threaded component 62 has a second external thread, penetrates the interior of the external threaded component 61, and is threadedly engaged with the first internal thread through the second external thread. The internal threaded component 63 has a third external thread, penetrates the interior of the middle threaded component 62, and is threadedly engaged with the assembly part 324 through the third external thread.

[0103] In practical applications, taking clockwise rotation of the external threaded component 61 as tightening and counterclockwise rotation as loosening as an example, when it is necessary to raise the height of the sealing body, the external threaded component 61 can be rotated counterclockwise to loosen it. Under the action of the second external thread and the first internal thread, the middle threaded component 62 tends to rise. Since the upper end of the middle threaded component 62 abuts against the assembly part 324, the internal threaded component 63 remains stationary due to the downward reaction force applied by the assembly part 324, thereby causing the external threaded component 61 to descend. At the same time, under the action of the first external thread and the threaded engagement of the sealing body, the height of the assembly part 324 within the assembly space 436 is relatively reduced, that is, the height of the sealing body is raised. When it is necessary to lower the height of the sealing body, the external threaded part 61 can be rotated clockwise to tighten it. Under the action of the second external thread and the first internal thread, the middle threaded part 62 tends to move downwards. However, since the lower end of the middle threaded part 62 abuts against the screw head of the internal threaded part 63 (as shown in Figure 16) or against the stepped portion on the inner circumferential wall of the external threaded part 61 (as shown in Figure 18), the internal threaded part 63 remains stationary due to the upward reaction force it exerts. This causes the external threaded part 61 to rise. At the same time, under the action of the first external thread and the threaded engagement of the sealing body, the height of the assembly part 324 within the assembly space 436 is relatively increased, thus lowering the height of the sealing body. It is easy to understand that when the external threaded part 61 in Figure 16 is in the tightened state, it cannot continue to rise. In addition, in practical applications, the internal threaded part 63 may not be properly screwed into the threaded hole of the assembly part 324. In this case, there is a certain gap between the lower end of the intermediate threaded part 62 and the screw head of the internal threaded part 63 (as shown in Figure 16) or the stepped portion on the inner circumferential wall of the external threaded part 61 (as shown in Figure 18). In this situation, the external threaded part 61 can be rotated clockwise to raise it. At the same time, under the action of the second external thread and the first internal thread, the intermediate threaded part 62 moves downward until the intermediate threaded part 62... The lower end of the screw abuts against the screw head of the internal threaded part 63 (as shown in Figure 16) or against the stepped portion on the inner circumferential wall of the external threaded part 61 (as shown in Figure 18), thereby creating a certain distance between the upper end of the intermediate threaded part 62 and the assembly part 324. This allows for a certain amount of adjustment when the internal threaded part 63 is rotated clockwise to raise it and simultaneously raise the intermediate threaded part 62. Afterward, the internal threaded part 63 can be rotated clockwise to tighten it, ensuring that it is properly tightened into the threaded hole of the assembly part 324.

[0104] As shown in Figures 16 and 18, in one embodiment of this application, the pitch of the first external thread can be greater than the pitch of the first internal thread. This allows for fine-tuning of the internal thread component 63. Specifically, since the pitch of the first internal thread is relatively small, the height of the external thread component 61 remains essentially unchanged when the internal thread component 63 is rotated. Therefore, the height of the sealing body can be basically unaffected while fine-tuning the internal thread component 63.

[0105] As shown in Figures 16 and 18, in one embodiment of this application, the connecting component 6 may further include a supporting reinforcement 64. The supporting reinforcement 64 is annular and disposed along the inner circumference of the threaded component 62, and is fixedly connected to the threaded component 62. One end of the supporting reinforcement 64 abuts against the assembly part 324, and the other end abuts against the head of the internally threaded component 63. The supporting reinforcement 64 can enhance the support for the internally threaded component 63.

[0106] As shown in Figures 10 and 16, in one embodiment of this application, the number of connecting parts 6 can be multiple, and the multiple connecting parts 6 are spaced apart in the circumferential direction of the sealing body.

[0107] By means of multiple connecting parts 6, the sealing body and the assembly part 324 can be connected from multiple positions in the circumferential direction of the sealing body, thereby improving the stability of the connection between the sealing body and the assembly part 324, and further improving the stability of the connection between the sealing assembly 4 and the support shaft 32. Furthermore, by means of multiple connecting parts 6, the distance between the sealing body and the assembly part 324 in the axial direction of the support shaft 32 can be adjusted from multiple positions in the circumferential direction of the sealing body, thereby adjusting the sealing body to be parallel to the assembly part 324, and then adjusting the sealing body to be parallel to the bearing part 31, thereby improving the sealing effect of the sealing assembly 4 on the sealing reaction chamber 2.

[0108] In some embodiments, an exhaust assembly may be provided inside the reaction chamber 2, which is used to exhaust the gas inside the reaction chamber 2.

[0109] In other words, the reaction gas entering the reaction chamber 2 and the gas entering the preset gap can both be discharged from inside the reaction chamber 2 to outside the reaction chamber 2 through the exhaust assembly.

[0110] As shown in Figures 1, 2, 4, 14, and 15, in some embodiments, the exhaust assembly may include a flow equalization ring 51, an upper exhaust ring 52, and a lower exhaust ring 53. The lower exhaust ring 53 is annular and arranged along the inner circumference of the reaction chamber 2. The upper exhaust ring 52 is disposed on the lower exhaust ring 53 and is annularly arranged along the inner circumference of the reaction chamber 2. The flow equalization ring 51 is disposed on the lower exhaust ring 53 and is annularly arranged inside the upper exhaust ring 52. An exhaust space 54 is formed between the flow equalization ring 51, the upper exhaust ring 52, and the lower exhaust ring 53. The flow equalization ring 51 has multiple flow equalization ports 511 spaced apart in the circumferential direction. The flow equalization ports 511 are connected to the exhaust space 54 and are used to discharge the reaction gas in the reaction chamber 2 to the exhaust space 54. The exhaust space 54 is connected to the outside of the reaction chamber 2 and is used to discharge the reaction gas to the outside of the reaction chamber 2.

[0111] In practical applications, the exhaust space 54 can be connected to an extraction device outside the process chamber. Under the extraction action of the extraction device, the reaction gas located above the support part 31 in the reaction chamber 2 can be discharged into the exhaust space 54 through multiple flow equalization ports 511, and then extracted out of the process chamber through the exhaust space 54, thereby allowing the reaction gas in the reaction chamber 2 to be discharged outside the reaction chamber 2. Furthermore, by providing multiple flow equalization ports 511 at intervals in the circumferential direction of the flow equalization ring 51, the reaction gas can be discharged into the exhaust space 54 from multiple points in the circumferential direction of the flow equalization ring 51 through the flow equalization ports 511, thereby increasing the speed at which the reaction gas is discharged into the exhaust space 54 and out of the process chamber, reducing the possibility of reaction gas accumulating and depositing at the edge of the reaction chamber 2, and thus reducing the particles generated in the reaction chamber 2 due to the accumulation and deposition of reaction gas, thereby improving the semiconductor process.

[0112] In some embodiments, a plurality of flow equalization ports 511 may be evenly spaced along the circumference of the flow equalization ring 51.

[0113] In some embodiments, the flow equalization port 511 may be U-shaped.

[0114] As shown in Figure 15, in some embodiments, the lower exhaust ring 53 may include an outer ring body 531, an inner ring body 532, and a connecting ring body 533. The outer ring body 531 is annular and surrounds the annular inner ring body 532. The outer ring body 531 and the inner ring body 532 are connected by the annular connecting ring body 533. The inner diameter of the inner ring body 532 is larger than the outer diameter of the support part 31, and the inner ring body 532 is provided with a plurality of exhaust ports 534 at intervals in the circumferential direction. The exhaust ports 534 are connected to the exhaust space 54 and are used to discharge gas to the exhaust space 54. The outer ring body 531 is provided with an exhaust port 535 for connecting to the exhaust device outside the reaction chamber 2 and for discharging gas to the outside of the reaction chamber 2.

[0115] By making the inner diameter of the inner ring 532 larger than the outer diameter of the support portion 31, a gap can be formed between the inner ring 532 and the support portion 31 when the support portion 31 is in the process position. This allows the gas in the preset gap below the support portion 31 to flow into the gap between the inner ring 532 and the support portion 31. Then, under the suction action of the suction device, the gas can be discharged into the exhaust space 54 through the multiple exhaust ports 534 of the inner ring 532. The gas is then extracted out of the process chamber through the exhaust space 54 and the suction port 535, thereby allowing the gas in the reaction chamber 2 to be discharged outside the reaction chamber 2. Furthermore, by providing multiple exhaust ports 534 at intervals along the circumference of the inner ring body 532, gas can be discharged from multiple points along the circumference of the inner ring body 532 through the exhaust ports 534 to the exhaust space 54, thereby increasing the speed at which gas is discharged to the exhaust space 54 and the speed at which gas is discharged to the outside of the process chamber, reducing the possibility of gas escaping above the support portion 31, thereby reducing the possibility of gas interfering with the semiconductor process, and thus improving the semiconductor process.

[0116] In some embodiments, a plurality of exhaust ports 534 may be evenly spaced along the circumference of the inner ring 532.

[0117] As shown in Figure 15, in some embodiments, the radial dimension of the exhaust port 534 can gradually increase from near the exhaust port 535 to away from the exhaust port 535 in the circumferential direction of the inner ring 532.

[0118] This design is because, in the circumferential direction of the inner ring 532, from near the air intake port 535 to far away from the air intake port 535, the suction force of the air extraction device gradually decreases. By gradually increasing the radial dimension of the exhaust port 534 in the circumferential direction of the inner ring 532 from near the air intake port 535 to far away from the air intake port 535, the gas can be quickly extracted from multiple points in the circumferential direction of the inner ring 532 to the exhaust space 54.

[0119] As shown in Figure 4, in some embodiments, the sealing assembly 4 may further include a second seal 44, which is retractably disposed within the assembly space 436 for sealing the support shaft 32 and the sealing body.

[0120] This design is due to the fact that the sealing body is axially movable on the support shaft 32. Therefore, a gap may exist between the support shaft 32 and the sealing body, which could cause communication between the reaction chamber 2 and the outer cavity 1. By providing a second seal 44 within the assembly space 436, the support shaft 32 and the sealing body can be sealed, thus isolating the reaction chamber 2 from the outer cavity 1. Furthermore, by making the second seal 44 retractable, it can extend and retract along with the sealing body as it moves axially along the support shaft 32, maintaining the seal between the support shaft 32 and the sealing body.

[0121] As shown in Figure 4, in some embodiments, the second seal 44 can be annular and surround the support shaft 32, with one end of the second seal 44 sealingly connected to the assembly part 324 and the other end sealingly connected to the sealing body. This design enables the second seal 44 to seal between the support shaft 32 and the sealing body.

[0122] In some embodiments, the second seal 44 may include a bellows. One end of the bellows may be welded to the assembly 324 for sealing, and the other end may be welded to the sealing body for sealing, thereby sealing the support shaft 32 and the sealing body.

[0123] As shown in Figures 1 and 2, in some embodiments, the semiconductor process chamber may also include an upper electrode structure 9, which is disposed on top of multiple reaction chambers 2 to provide radio frequency energy for the semiconductor process and excite the reaction gas to form plasma.

[0124] In some embodiments, the semiconductor process chamber provided in this application can be applied to plasma-enhanced atomic layer deposition processes.

[0125] As shown in Figures 1-3, this application embodiment also provides a semiconductor process apparatus, including a wafer transfer device 11 and a semiconductor process chamber as provided in this application embodiment. The wafer transfer device 11 is located in the outer cavity 1 and is used to pick up and place wafers into the carrier 31 when each carrier 31 is in the transfer position.

[0126] The semiconductor process equipment provided in this application embodiment, by means of the semiconductor process chamber provided in this application embodiment, can avoid mutual interference between multiple reaction chambers 2 during semiconductor processing, so that multiple reaction chambers 2 can be independent of each other, thereby improving the consistency and stability of semiconductor processing of wafers in multiple reaction chambers 2. In addition, it can avoid problems caused by reduced elasticity of the elastic bellows, irregular jumping, and inability to be used in high-temperature processes (e.g., 550°C and above), thereby improving the sealing stability of the sealing component 4 and improving the operational stability of the semiconductor process chamber and the semiconductor process equipment.

[0127] In summary, the semiconductor process chamber and semiconductor process equipment provided in this application embodiment can improve the sealing stability of the sealing component 4 and improve the operational stability of the semiconductor process chamber and semiconductor process equipment.

[0128] The foregoing summarizes the features of several embodiments, enabling those skilled in the art to better understand the nature of this disclosure. Those skilled in the art should understand that they can readily use this disclosure as a basis for designing or modifying other processes and structures for implementing the embodiments described herein and / or achieving the same benefits. Those skilled in the art should also understand that such equivalent constructions do not depart from the spirit and scope of this disclosure, and that various changes, substitutions, and modifications can be made herein without departing from the spirit and scope of this disclosure.

[0129] 1:External cavity 2: Reaction chamber 3: Supporting device 4: Sealing components 6: Connecting components 9: Upper electrode structure 11: Wafer Transfer Device 12: Transmission port 31: Bearing section 32: Support shaft 41: Assembly slot 42: Connector 43: Connecting the separate parts 44: Second seal 51: Flow equalizer ring 52: Upper exhaust ring 53: Lower exhaust ring 54: Exhaust space 61: External threaded parts 62: Medium threaded parts 63: Internal threaded parts 64: Support reinforcement 71: Support column 72: Support component 81: Lifting drive source 82: Driver Source 83: External air tube 111: Transmission Department 311: Through hole 321: Intake passage 322: Air Intake 323: Second vent 324: Assembly Department 421: Connecting through hole 431: Threaded connection hole 432: Main airway 433: Bronchial 434: First vent 435: First air intake port 436: Assembly Space 437: Via 451: First sealing plate 451a: Annular protrusion 452: Second sealing plate 453: Sidewall 511: Uniform flow port 531: Outer Ring Body 532: Inner Ring Body 533: Connecting ring body 534: Exhaust port 535: Exhaust port

Claims

1. A semiconductor process chamber, comprising an outer cavity having a plurality of reaction regions, each reaction region being provided with a reaction chamber, a support device, and a sealing assembly; wherein: The reaction chamber has an opening at its bottom end; the carrier includes a carrier portion and a liftable support shaft. The carrier portion carries a wafer, and the support shaft is located at the bottom of the carrier portion to support the carrier portion and moves up and down between a process position within the reaction chamber and a transfer position located below the reaction chamber via the opening; a sealing assembly is located below the carrier portion and connected to the carrier, and the support shaft passes through the sealing assembly. The sealing assembly moves up and down with the support shaft, and when the support shaft supports the carrier portion to rise to the process position, it contacts the bottom end of the reaction chamber to seal the opening. The sealing assembly is connected to the support shaft; the support shaft has an assembly portion surrounding it; the sealing assembly includes an annular sealing body surrounding the support shaft and sealing the opening, and the sealing body has an annular assembly space surrounding the support shaft for accommodating the assembly portion; the sealing body and the assembly portion are connected.

2. The semiconductor process chamber as claimed in claim 1, wherein the sealing assembly further includes a connecting member; the connecting member is used to connect the sealing assembly to the support shaft by connecting the sealing body and the assembly.

3. The semiconductor process chamber as claimed in claim 2, wherein when the sealing body seals the opening, there is a predetermined gap between the sealing body and the carrier.

4. The semiconductor process chamber as claimed in claim 3, wherein the sealing body comprises: An annular first sealing plate, an annular second sealing plate located on the side of the first sealing plate opposite to the support portion and isolated from the first sealing plate, and a sidewall located between the first sealing plate and the second sealing plate; the first sealing plate is used to seal the opening; the sidewall connects the first sealing plate and the second sealing plate to form the assembly space between the first sealing plate, the second sealing plate and the sidewall, and the assembly opening of the assembly space faces the outer peripheral surface of the support shaft.

5. The semiconductor process chamber as claimed in claim 4, wherein the interior of the first sealing plate has a gas channel, the side of the first sealing plate facing the support portion has a plurality of first vent holes extending through the gas channel, and the inner annular surface of the first sealing plate has a first inlet hole communicating with the gas channel; an inlet channel is provided in the support shaft, and the support shaft has a second vent hole at a position opposite to the inner annular surface of the first sealing plate, so that the gas in the inlet channel is sequentially transported to the preset gap through the second vent hole, the first inlet hole, the gas channel and the first vent hole.

6. The semiconductor process chamber as claimed in claim 5, wherein the gas passage includes a plurality of branch gas channels distributed circumferentially along the first sealing plate and a main gas channel communicating with all of the plurality of branch gas channels; the main gas channel is annular, the plurality of branch gas channels are arranged around the main gas channel, and each of the branch gas channels extends radially along the first sealing plate; the first air inlet communicates with the main gas channel.

7. The semiconductor process chamber as claimed in claim 5, wherein the carrier further includes a plurality of support columns extending through the carrier portion and being liftable; the first sealing plate further has a through hole through which each of the support columns passes, and the orthographic projection of the through hole in the carrier portion coincides with the orthographic projection of the first vent hole in the carrier portion.

8. The semiconductor process chamber as claimed in claim 5, wherein the radial dimension of the first air inlet gradually decreases from the end of the first air inlet near the support shaft to the end of the first air inlet away from the support shaft.

9. The semiconductor process chamber as claimed in claim 2, wherein the sealing assembly further includes a first seal, the sealing body is provided with an assembly groove disposed on the side of the sealing body facing the bottom end of the reaction chamber and disposed circumferentially along the sealing body, the first seal is annular and assembled in the assembly groove, the first seal is used to contact the bottom end of the reaction chamber when the support shaft supports the bearing portion to rise to the process position, thereby sealing the opening by sealing the sealing body and the bottom end of the reaction chamber.

10. The semiconductor process chamber as claimed in claim 9, wherein the radial dimension of the opening of the assembly slot is smaller than the radial dimension of the bottom of the assembly slot.

11. The semiconductor process chamber as claimed in claim 3, wherein the side of the sealing body facing the support portion is arc-shaped, and the distance between the side of the sealing body facing the support portion and the support portion gradually increases from the center to the edge of the side of the sealing body facing the support portion.

12. The semiconductor process chamber as claimed in claim 2, wherein the connecting member is further used to adjust the axial spacing between the sealing body and the assembly on the support shaft.

13. The semiconductor process chamber as claimed in claim 12, wherein the connecting member includes an external threaded member, a middle threaded member, and an internal threaded member, the external threaded member having a first external thread and a first internal thread, the thread direction of the first external thread being opposite to the thread direction of the first internal thread, the external threaded member penetrating the sealing body into the assembly space and threadedly engaging with the sealing body through the first external thread, the middle threaded member having a second external thread penetrating the interior of the external threaded member and threadedly engaging with the first internal thread through the second external thread, and the internal threaded member having a third external thread penetrating the interior of the middle threaded member and threadedly engaging with the assembly portion through the third external thread.

14. The semiconductor process chamber as claimed in claim 13, wherein the pitch of the first external thread is greater than the pitch of the first internal thread.

15. The semiconductor process chamber as claimed in claim 13, wherein the connecting member further includes a support reinforcement, the support reinforcement being annular and disposed along the inner periphery of the threaded member and fixedly connected to the threaded member, wherein one end of the support reinforcement abuts against the assembly portion and the other end abuts against the head of the internal threaded member.

16. The semiconductor process chamber as claimed in claim 2, wherein the number of the connecting components is plurality of, and the plurality of the connecting components are spaced apart in the circumferential direction of the sealing body.

17. A semiconductor process apparatus, comprising a wafer transfer device and a semiconductor process chamber as described in any one of claims 1-16, the wafer transfer device being located within the outer cavity for picking up and placing wafers onto the carrier when each of the carriers is in the transfer position.

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