Semiconductor photoresist composition and method of forming patterns using the composition

Abstract

A semiconductor photoresist composition and a method for patterning thereon are disclosed. The semiconductor photoresist composition comprises a Sn-containing organometallic compound, a compound represented by Chemical Formula 1, and a solvent. Chemical Formula 1 is described as in the specification.

Description

Technical Field

[0001] [[] [Cross-reference to related applications] []] []

[0002] This application claims priority and benefit to Korean Patent Application No. 10-2024-0001135, filed with the Korean Intellectual Property Office on January 3, 2024, the entire contents of which are incorporated herein by reference.

[0003] Embodiments of this disclosure relate to semiconductor photoresist compositions and methods for forming patterns using said compositions. Prior Technology

[0004] EUV (Extreme Ultraviolet) lithography is gaining attention as a technology for manufacturing next-generation semiconductor devices. EUV lithography is a patterning technique that uses EUV rays with a wavelength of 13.5 nanometers as the exposure source. According to EUV lithography, extremely fine patterns (e.g., less than or equal to 20 nanometers) can be formed during the exposure process in semiconductor device manufacturing.

[0005] Extreme ultraviolet (EUV) lithography can be achieved by developing compatible photoresists capable of spatial resolutions of 16 nanometers or less. Currently, efforts are underway to meet the shortcomings of traditional chemically amplified (CA) photoresists in terms of resolution, photosensitivity, and feature roughness (also known as line edge roughness or LER) for next-generation devices.

[0006] The inherent image blurring caused by acid-catalyzed reactions in these polymeric photoresists limits the resolution of small feature sizes, a persistent issue in electron beam lithography. Chemically amplified (CA) photoresists are designed for high sensitivity, but their sensitivity is reduced due to their typically lower elemental composition, which decreases the photoresist's light absorption at 13.5 nm wavelengths. Therefore, CA photoresists may face at least some of the challenges under EUV exposure.

[0007] CA photoresist may encounter difficulties at small feature sizes due to roughness issues, and experiments show that the line edge roughness (LER) of CA photoresist increases with decreasing photosensitivity, at least in part due to the nature of the acid-catalyzed process. Therefore, given these defects and problems of CA photoresist, high-performance photoresist would be beneficial to the semiconductor industry.

[0008] To overcome the aforementioned drawbacks of chemically amplified (CA) organic photosensitive compositions, inorganic photosensitive compositions have been investigated. Inorganic photosensitive compositions are primarily used for negative patterning with resistance to developer composition removal through chemical modification via non-chemical amplification mechanisms. These compositions contain inorganic elements with higher EUV absorbance than hydrocarbons, thus ensuring sensitivity through non-chemical amplification mechanisms. Furthermore, they are less sensitive to stochastic effects, resulting in low line edge roughness and relatively fewer defects.

[0009] Tungsten-based peroxypolyacids mixed with tungsten, niobium, titanium and / or tantalum have been reported as radiation-sensitive materials for patterning.

[0010] These materials are effective for large-pitch patterning in dual-layer configurations for far-ultraviolet (deep ultraviolet), X-ray, and electron beam light sources. Recently, impressive performance has been achieved by using cationic hafnium metal oxide sulfate (HfSOx) materials with a peroxide complexing agent for projection EUV exposure imaging at 15 nm half-pitch (HP). The system exhibits the highest performance without CA photoresist and has a practical photosensitivity close to or suitable for EUV photoresist requirements. However, hafnium metal oxide sulfate materials with peroxide complexing agents have some practical drawbacks. First, these materials are coated in a corrosive sulfuric acid / hydrogen peroxide mixture and have insufficient shelf-life stability. Second, structural modifications to improve the performance of the composite mixture are not readily available. Third, development must be carried out in a very high concentration of 25 wt% TMAH (tetramethylammonium hydroxide) solution and / or similar substances.

[0011] Recently, tin-containing molecules have been actively studied, exhibiting excellent absorption of extreme ultraviolet light. Among them, organotin polymers, with their alkyl ligands dissociating through light absorption or the resulting secondary electrons, and crosslinking with adjacent chains via oxygen bonds, achieve negative patterning that cannot be removed by organic developers. These organotin polymers show significantly improved sensitivity while maintaining resolution and line edge roughness; however, further improvements in patterning properties are needed for commercial availability. Summary of the Invention

[0012] Some embodiments of this disclosure provide semiconductor photoresist compositions with excellent sensitivity characteristics.

[0013] Some embodiments provide a method for forming patterns using the semiconductor photoresist composition.

[0014] According to some embodiments, the semiconductor photoresist composition includes a Sn-containing organometallic compound; a compound represented by chemical formula 1; and a solvent. [Chemical Formula 1]

[0015] In chemical formula 1,

[0016] R 1 is an unsubstituted C3 to C10 alkylene, a substituted C1 to C10 alkylene, a substituted or unsubstituted C4 to C20 cycloalkylene, a substituted or unsubstituted C4 to C20 cycloalkenylene, a substituted or unsubstituted C3 to C5 alkylene, a substituted or unsubstituted C3 to C5 alkynylene, a substituted or unsubstituted C6 to C30 arylene, a substituted or unsubstituted C2 to C30 heterocycloalkylene, a substituted or unsubstituted C2 to C30 heteroarylene, or a combination thereof.

[0017] A method for forming a pattern according to some embodiments includes forming an etch target layer on a substrate, coating a semiconductor photoresist composition on the etch target layer to form a photoresist layer, patterning the photoresist layer to form a photoresist pattern, and using the photoresist pattern as an etch mask to etch the etch target layer.

[0018] The semiconductor photoresist compositions according to some embodiments can achieve excellent sensitivity and LER characteristics. Simple Explanation of the Diagram

[0019] The accompanying drawings, together with the specification, illustrate embodiments of the subject matter of this disclosure and, together with the description, serve to explain the principles of the embodiments of the subject matter of this disclosure. Figures 1A-1E are cross-sectional views illustrating a method for forming patterns using a semiconductor photoresist composition according to some embodiments. Implementation

[0020] Hereinafter, embodiments will be described in more detail with reference to the accompanying drawings. In the following description of the subject matter of this disclosure, well-known functions or structures will not be described in order to clarify the description of embodiments of this disclosure.

[0021] To clearly illustrate the embodiments of this disclosure, certain descriptions and relationships may be omitted, and throughout the disclosure, identical or similar configuration elements are designated by the same reference numerals. Furthermore, since the dimensions and thicknesses of each configuration shown in the drawings may be arbitrarily displayed for better understanding and ease of description, this disclosure is not necessarily limited thereto.

[0022] In the accompanying drawings, the thickness of layers, films, panels, regions, etc., may be exaggerated for clarity. The thickness of some layers or regions, etc., may be exaggerated for clarity. It should be understood that if an element such as a layer, film, region, or substrate is referred to as "on" another element, it may be directly on the other element or there may be elements in between.

[0023] As used herein, "substituted" refers to the hydrogen atom being replaced by: deuterium, halogen, hydroxyl, thiol, cyano, nitro, -NRR' (where R and R' are each independently hydrogen, substituted or unsubstituted C1 to C30 saturated or unsaturated aliphatic hydrocarbon group, substituted or unsubstituted C3 to C30 saturated or unsaturated alicyclic hydrocarbon group, or substituted or unsubstituted C6 to C30 aromatic hydrocarbon group), -SiRR'R" (where R, R', and R" are each substituted The group can be, independently, hydrogen, a substituted or unsubstituted C1 to C30 saturated or unsaturated aliphatic hydrocarbon group, a substituted or unsubstituted C3 to C30 saturated or unsaturated alicyclic hydrocarbon group, or a substituted or unsubstituted C6 to C30 aromatic hydrocarbon group, a C1 to C30 alkyl group, a C1 to C10 haloalkyl group, a C1 to C10 alkylsilyl group, a C3 to C30 cycloalkyl group, a C6 to C30 aryl group, a C1 to C20 alkoxy group, a C1 to C20 sulfide group, or a combination thereof. "Unsubstituted" means that the hydrogen atom has not been replaced by other substituents and the hydrogen atom is retained.

[0024] As used herein, unless otherwise defined, "alkyl" refers to a straight-chain or branched aliphatic hydrocarbon group. Alkyl groups may be "saturated alkyl groups" that do not contain any double or triple bonds.

[0025] The alkyl group can be C1 to C8 alkyl. For example, the alkyl group can be C1 to C7 alkyl, C1 to C6 alkyl, or C1 to C5 alkyl. For example, C1 to C5 alkyl can be methyl, ethyl, propyl, isopropyl, n-butyl, isobutyl, sec-butyl, tert-butyl, or 2,2-dimethylpropyl.

[0026] As used herein, unless otherwise defined, "cycloalkyl" refers to a monovalent cyclic aliphatic saturated hydrocarbon group.

[0027] The cycloalkyl group can be C3 to C8 cycloalkyl, for example, C3 to C7 cycloalkyl or C3 to C6 cycloalkyl. For example, the cycloalkyl group can be cyclopropyl, cyclobutyl, cyclopentyl or cyclohexyl, but is not limited thereto.

[0028] As used in this article, "aliphatic unsaturated organic group" refers to a hydrocarbon group containing carbon atoms in a molecule whose bonds are double bonds, triple bonds, or combinations thereof.

[0029] The aliphatic unsaturated organic group can be a C2 to C8 aliphatic unsaturated organic group. For example, the aliphatic unsaturated organic group can be a C2 to C7 aliphatic unsaturated organic group, a C2 to C6 aliphatic unsaturated organic group, a C2 to C5 aliphatic unsaturated organic group, or a C2 to C4 aliphatic unsaturated organic group. For example, the C2 to C4 aliphatic unsaturated organic group can be vinyl, ethynyl, allyl, 1-propenyl, 1-methyl-1-propenyl, 2-propenyl, 2-methyl-2-propenyl, 1-butenyl, 2-butenyl, 3-butenyl, 1-butynyl, 2-butynyl, or 3-butynyl.

[0030] As used herein, "aryl" refers to a cyclic substituent in which all atoms have p orbitals and these p orbitals are conjugated, and may include monocyclic or fused-ring polycyclic functional groups (i.e., rings that share adjacent carbon atom pairs).

[0031] As used herein, "heteroaryl" can refer to an aryl group containing at least one heteroatom selected from N, O, S, P, and Si. Two or more heteroaryl groups are directly linked by σ bonds, or if the heteroaryl group contains two or more rings, the two or more rings may be fused together. If the heteroaryl group is a fused ring, each ring may contain one to three heteroatoms.

[0032] As used herein, unless otherwise defined, "alkenyl" refers to an aliphatic unsaturated alkenyl group consisting of a straight-chain or branched aliphatic hydrocarbon group containing at least one double bond.

[0033] As used herein, unless otherwise defined, "alkynyl" refers to an aliphatic unsaturated alkynyl group containing at least one triple bond in a straight-chain or branched aliphatic hydrocarbon group.

[0034] The following describes semiconductor photoresist compositions according to some embodiments.

[0035] According to some embodiments, the semiconductor photoresist composition includes a Sn-containing organometallic compound, a compound represented by chemical formula 1, and a solvent. [Chemical Formula 1]

[0036] In chemical formula 1,

[0037] R 1 is an unsubstituted C3 to C10 alkylene, a substituted C1 to C10 alkylene, a substituted or unsubstituted C4 to C20 cycloalkylene, a substituted or unsubstituted C4 to C20 cycloalkenylene, a substituted or unsubstituted C3 to C5 alkylene, a substituted or unsubstituted C3 to C5 alkynylene, a substituted or unsubstituted C6 to C30 arylene, a substituted or unsubstituted C2 to C30 heterocycloalkylene, a substituted or unsubstituted C2 to C30 heteroarylene, or a combination thereof.

[0038] By incorporating dicarboxylic acid compounds, the semiconductor photoresist composition exhibits increased sensitivity to extreme ultraviolet light and excellent stability against line edge roughness (LER) and process delay.

[0039] In the embodiments, if R1 in Formula 1 is cyclic, the above-mentioned effect can be achieved when the total number of carbon atoms contained in the compound is 4 to 8; if R1 in Formula 1 is chain-like (e.g., chain or straight chain), the above-mentioned effect can be achieved when the total number of carbon atoms contained in the compound is 3 or more.

[0040] In embodiments where R1 is a straight chain, if the total number of carbon atoms in the compound is less than 3, the stability improvement effect is reduced; if it exceeds 10, the residue in the unexposed area after development increases, and the process allowance decreases.

[0041] R1 can be derived, for example, from the following divalent linkers: substituted methane, substituted ethane, substituted or unsubstituted propane, substituted or unsubstituted butane, substituted or unsubstituted pentane, substituted or unsubstituted cyclopentane, substituted or unsubstituted cyclopentene, substituted or unsubstituted cyclohexane, substituted or unsubstituted tetrahydropyran, substituted or unsubstituted 1,4-dioxane, substituted or unsubstituted tetrahydrothiopyran, substituted or unsubstituted 1,4-oxathiane, substituted or unsubstituted 1,4-dithiane, substituted or unsubstituted tetrahydrothiophene, substituted or unsubstituted dihydrothiophene, substituted or unsubstituted thiophene, substituted or unsubstituted tetrahydrofuran, substituted or unsubstituted tetrahydrothiophene, etc. Substituted dihydrofuran, substituted or unsubstituted furan, substituted or unsubstituted oxazolidine, substituted or unsubstituted oxazole, substituted or unsubstituted oxazoline, substituted or unsubstituted pyrrolidine, substituted or unsubstituted pyrrolidine, substituted or unsubstituted pyrrole, substituted or unsubstituted imidazoline, substituted or unsubstituted imidazoline, substituted or unsubstituted imidazoline, substituted or unsubstituted pyrazole, substituted or unsubstituted pyrrolidine, substituted or unsubstituted pyrrolidine, substituted or unsubstituted pyridine, substituted or unsubstituted oxazine or substituted or unsubstituted pyrazine.

[0042] As an example, a compound represented by chemical formula 1 may be one of the compounds listed in group 1. [Group 1] .

[0043] For example, the compound represented by chemical formula 1 may be glutaric acid, pimelic acid, methylsuccinic acid, phthalic acid, cyclohexanedicarboxylic acid, furandicarboxylic acid, or a combination thereof.

[0044] Based on 100% by weight of the semiconductor photoresist composition, the compound represented by chemical formula 1 may be included in an amount from about 0.01% to about 10% by weight.

[0045] For example, based on 100% by weight of a semiconductor photoresist composition, the compound represented by chemical formula 1 may be included in an amount of about 0.01 to about 5% by weight or about 0.05 to about 5% by weight.

[0046] Based on 100% by weight of the semiconductor photoresist composition, it may include a Sn-containing organometallic compound in an amount from about 0.5% to about 30% by weight.

[0047] The semiconductor photoresist composition according to some embodiments improves the sensitivity of the photoresist by including a Sn-containing organometallic compound and a compound represented by chemical formula 1 within the above-mentioned amount range.

[0048] According to some embodiments, the semiconductor photoresist composition may comprise a Sn-containing organometallic compound and a compound represented by Chemical Formula 1 in a weight ratio of about 99.9:0.1 to about 80:20. For example, the semiconductor photoresist composition may comprise a Sn-containing organometallic compound and a compound represented by Chemical Formula 1 in a weight ratio of about 95:5 to about 85:15.

[0049] If the weight ratio of the Sn-containing organometallic compound and the compound represented by chemical formula 1 meets the above range, a semiconductor photoresist composition with excellent sensitivity can be provided.

[0050] Sn-containing organometallic compounds may include at least one selected from organooxy groups and organocarbonyloxy groups.

[0051] Sn-containing organometallic compounds can be represented by chemical formula 2. [Chemical Formula 2]

[0052] In chemical formula 2,

[0053] R2 is selected from substituted or unsubstituted C1 to C20 alkyl, substituted or unsubstituted C3 to C20 cycloalkyl, substituted or unsubstituted C2 to C20 alkenyl, substituted or unsubstituted C2 to C20 alkynyl, substituted or unsubstituted C6 to C30 aryl, substituted or unsubstituted C6 to C30 aralkyl, and LaORa (where La is a substituted or unsubstituted C1 to C20 alkenyl and Ra is a substituted or unsubstituted C1 to C20 alkyl).

[0054] R3 to R5 are each independently a substituted or unsubstituted C1 to C20 alkyl, a substituted or unsubstituted C3 to C20 cycloalkyl, a substituted or unsubstituted C2 to C20 alkenyl, a substituted or unsubstituted C2 to C20 alkynyl, a substituted or unsubstituted C6 to C30 aryl, a substituted or unsubstituted C6 to C30 aralkyl, -ORb or -OC(=O)Rc,

[0055] At least one of R3 to R5 is selected from -OR b and -OC (=O)R c.

[0056] Rb is a substituted or unsubstituted C1 to C20 alkyl, a substituted or unsubstituted C3 to C20 cycloalkyl, a substituted or unsubstituted C2 to C20 alkenyl, a substituted or unsubstituted C2 to C20 alkynyl, a substituted or unsubstituted C6 to C30 aryl, or a combination thereof, and

[0057] Rc is hydrogen, a substituted or unsubstituted C1 to C20 alkyl group, a substituted or unsubstituted C3 to C20 cycloalkyl group, a substituted or unsubstituted C2 to C20 alkenyl group, a substituted or unsubstituted C2 to C20 alkynyl group, a substituted or unsubstituted C6 to C30 aryl group, or a combination thereof.

[0058] In the embodiments, the compound represented by Formula 2 includes -ORb or -OC(=O)Rc as a ligand, such that patterns formed using semiconductor photoresist compositions containing it can exhibit excellent limiting resolution.

[0059] In the embodiments, the -ORb or -OC(=O)Rc ligands can determine the solubility of the compound represented by Formula 2 in the solvent.

[0060] R2 may be a substituted or unsubstituted C1 to C8 alkyl group, a substituted or unsubstituted C3 to C8 cycloalkyl group, a substituted or unsubstituted C2 to C8 aliphatic unsaturated organic group containing one or more double or triple bonds, a substituted or unsubstituted C6 to C20 aryl group, a substituted or unsubstituted C4 to C20 heteroaryl group, a carbonyl group, an ethoxy group, a propoxy group, or a combination thereof.

[0061] Rb can be a substituted or unsubstituted C1 to C8 alkyl, a substituted or unsubstituted C3 to C8 cycloalkyl, a substituted or unsubstituted C2 to C8 alkenyl, a substituted or unsubstituted C2 to C8 alkynyl, a substituted or unsubstituted C6 to C20 aryl, or a combination thereof, and

[0062] Rc can be hydrogen, substituted or unsubstituted C1 to C8 alkyl, substituted or unsubstituted C3 to C8 cycloalkyl, substituted or unsubstituted C2 to C8 alkenyl, substituted or unsubstituted C2 to C8 alkynyl, substituted or unsubstituted C6 to C20 aryl, or a combination thereof.

[0063] R2 can be methyl, ethyl, propyl, butyl, isopropyl, tert-butyl, 2,2-dimethylpropyl, cyclopropyl, cyclobutyl, cyclopentyl, cyclohexyl, vinyl, propenyl, butenyl, ethynyl, propynyl, butynyl, phenyl, tolyl, xylyl, benzyl, methyl, acetyl, propionyl, butyl, pentayl, ethoxy, propoxy, or combinations thereof.

[0064] Rb can be ethyl, propyl, butyl, isopropyl, tert-butyl, 2,2-dimethylpropyl, cyclopropyl, cyclobutyl, cyclopentyl, cyclohexyl, vinyl, propenyl, butenyl, ethynyl, propynyl, butynyl, phenyl, tolyl, xylylyl, benzyl, or combinations thereof, and

[0065] Rc can be hydrogen, ethyl, propyl, butyl, isopropyl, tert-butyl, 2,2-dimethylpropyl, cyclopropyl, cyclobutyl, cyclopentyl, cyclohexyl, vinyl, propenyl, butenyl, ethynyl, propynyl, butynyl, phenyl, tolyl, xylylyl, benzyl, or a combination thereof.

[0066] In the embodiments, the Sn-containing organometallic compound may be represented by chemical formula 3 or chemical formula 4. [Chemical Formula 3] R 6 zSnO (2-(z / 2)-(x / 2))(OH) x

[0067] In chemical formula 3,

[0068] R 6 is a C1 to C31 hydrocarbon group (e.g., C1 to C31 hydrocarbon group), 0 < z ≤ 2, and 0 < (z+x) ≤ 4; [Chemical Formula 4] R 7 nSn mX lY k

[0069] In chemical formula 4,

[0070] R 7 is a substituted or unsubstituted C1 to C20 alkyl group, a substituted or unsubstituted C3 to C20 cycloalkyl group, a substituted or unsubstituted C2 to C20 aliphatic unsaturated organogroup containing one or more double or triple bonds, a substituted or unsubstituted C6 to C30 aryl group, a substituted or unsubstituted C4 to C30 heteroaryl group, a carbonyl group, an ethylene oxide group, an propylene oxide group, or a combination thereof.

[0071] X is sulfur (S), selenium (Se), or tellurium (Te).

[0072] Y is either -OR m or -OC (=O)R n,

[0073] Wherein Rm is a substituted or unsubstituted C1 to C20 alkyl, a substituted or unsubstituted C3 to C20 cycloalkyl, a substituted or unsubstituted C2 to C20 alkenyl, a substituted or unsubstituted C2 to C20 alkynyl, a substituted or unsubstituted C6 to C30 aryl, or a combination thereof.

[0074] Rn is hydrogen, a substituted or unsubstituted C1 to C20 alkyl, a substituted or unsubstituted C3 to C20 cycloalkyl, a substituted or unsubstituted C2 to C20 alkenyl, a substituted or unsubstituted C2 to C20 alkynyl, a substituted or unsubstituted C6 to C30 aryl, or a combination thereof, and

[0075] n, m, l, and k are each an independent integer from 1 to 20.

[0076] According to some embodiments, the solvent for the semiconductor photoresist composition may be an organic solvent, such as aromatic compounds (e.g., xylene, toluene, etc.), alcohols (e.g., 4-methyl-2-pentanol, 4-methyl-2-propanol, 1-butanol, methanol, isopropanol, 1-propanol, etc.), ethers (e.g., anisole, tetrahydrofuran, etc.), esters (e.g., n-butyl acetate, propylene glycol monomethyl ether acetate, ethyl acetate, ethyl lactate, etc.), ketones (e.g., methyl ethyl ketone, 2-heptanone, etc.), or mixtures thereof, but not limited thereto.

[0077] According to some embodiments, in addition to the Sn-containing organometallic compound, the compound represented by chemical formula 1, and the solvent, the semiconductor photoresist composition may also include a resin.

[0078] The resin may be a phenolic resin containing at least one aromatic group listed in Group 2. [Group 2]

[0079] The resin may have a weight average molecular weight of about 500 to about 20,000.

[0080] Based on the total amount of the semiconductor photoresist composition, the resin may be included in an amount from about 0.1% to about 50% by weight.

[0081] If the resin is contained within the above content range, it can have excellent etch resistance and heat resistance.

[0082] According to some embodiments, the semiconductor photoresist composition may consist of the above-mentioned Sn-containing organometallic compound, a compound represented by chemical formula 1, a solvent, and a resin.

[0083] The semiconductor photoresist composition according to the above embodiments may further include additives as needed or required. Examples of additives may be surfactants, crosslinking agents, leveling agents, organic acids, quenchers, or combinations thereof.

[0084] Surfactants may include, for example, alkylbenzene sulfonates, alkylpyridinium salts, polyethylene glycol, quaternary ammonium salts, or combinations thereof, but are not limited thereto.

[0085] The crosslinking agent may be, for example, a melamine crosslinking agent, a substituted urea crosslinking agent, an acrylic crosslinking agent, an epoxy crosslinking agent, and / or a polymer crosslinking agent, but is not limited thereto. The crosslinking agent may be a crosslinking agent having at least two substituents that form crosslinks, such as methoxymethylated biuret, butoxymethylated biuret, methoxymethylated melamine, butoxymethylated melamine, methoxymethylated benzoguanidine, butoxymethylated benzoguanidine, 4-hydroxybutyl acrylate, acrylic acid, aminocarbamate acrylate, methacrylate, 1,4-butanediol diglycidyl ether, glycidyl, 1,2-cyclohexanedicarboxylic acid diglycidyl ether, trimethylpropane triglycidyl ether, 1,3-bis(glycidoxypropyl)tetramethyldisiloxane, methoxymethylated urea, butoxymethylated urea, methoxymethylated thiourea, and / or similar compounds.

[0086] Leveling agents can be used to improve the flatness of coatings during the printing process and can be any suitable leveling agent commonly used in the art.

[0087] Organic acids may include, but are not limited to, p-toluenesulfonic acid, benzenesulfonic acid, p-dodecylbenzenesulfonic acid, 1,4-naphthalenedisulfonic acid, methanesulfonic acid, sulfonium fluoride salts, malonic acid, citric acid, propionic acid, methacrylic acid, oxalic acid, lactic acid, glycolic acid, succinic acid, or combinations thereof.

[0088] The quencher may be diphenyl(p-tolyl)amine, methyldiphenylamine, triphenylamine, phenylenediamine, naphthylamine, diaminonaphthalene or a combination thereof.

[0089] In some embodiments, the semiconductor photoresist composition according to this disclosure may be mixed with an acid compound that is different from the compound represented by chemical formula 1, and the mixable acid compound may include a monoacid.

[0090] The amount of additives used can be controlled according to the appropriate or required performance.

[0091] In embodiments, the semiconductor photoresist composition may further include a silane coupling agent as an adhesion enhancer to improve the tightness of contact with the substrate (e.g., to improve the adhesion of the semiconductor photoresist composition to the substrate). The silane coupling agent may be, for example, a silane compound containing carbon-carbon unsaturated bonds, such as vinyltrimethoxysilane, vinyltriethoxysilane, vinyltrichlorosilane, vinyltri(β-methoxyethoxy)silane; and / or 3-methacryloxypropyltrimethoxysilane, 3-acryloxypropyltrimethoxysilane, p-styryltrimethoxysilane, 3-methacryloxypropylmethyldimethoxysilane, 3-methacryloxypropylmethyldiethoxysilane; trimethoxy[3-(anilino)propyl]silane and / or similar compounds, but is not limited thereto.

[0092] Semiconductor photoresist compositions can form patterns with high aspect ratios without collapse. Therefore, to form fine patterns with widths of, for example, about 5 nanometers to about 100 nanometers, about 5 nanometers to about 80 nanometers, about 5 nanometers to about 70 nanometers, about 5 nanometers to about 50 nanometers, about 5 nanometers to about 40 nanometers, about 5 nanometers to about 30 nanometers, or about 5 nanometers to about 20 nanometers, semiconductor photoresist compositions can be used in lithography processes using light with wavelengths of about 5 nanometers to about 150 nanometers, for example, about 5 nanometers to about 100 nanometers, about 5 nanometers to about 80 nanometers, about 5 nanometers to about 50 nanometers, about 5 nanometers to about 30 nanometers, or about 5 nanometers to about 20 nanometers. Therefore, semiconductor photoresist compositions according to some embodiments can be used to realize extreme ultraviolet lithography using EUV light sources providing light with wavelengths of about 13.5 nanometers.

[0093] According to some embodiments, a method for forming a pattern using the above-described semiconductor photoresist composition is provided. For example, the pattern produced may be a photoresist pattern.

[0094] A method for forming a pattern according to some embodiments includes forming an etch target layer on a substrate, coating a semiconductor photoresist composition on the etch target layer to form a photoresist layer, patterning the photoresist layer to form a photoresist pattern, and using the photoresist pattern as an etch mask to etch the etch target layer.

[0095] The method of forming a pattern using a semiconductor photoresist composition is described below with reference to FIG1A-1E. FIG1A-1E are cross-sectional views illustrating a method of forming a pattern using a semiconductor photoresist composition according to some embodiments.

[0096] Referring to FIG1A, prepare the object to be etched. The object to be etched may be a thin film 102 formed on a semiconductor substrate 100. Hereinafter, the object to be etched is limited to the thin film 102. The surface of the thin film 102 is washed to remove impurities and / or similar substances remaining thereon. The thin film 102 may be, for example, a silicon nitride layer, a polycrystalline silicon layer, and / or a silicon oxide layer.

[0097] Subsequently, the resist underlayer composition for forming the resist underlayer 104 is spin-coated onto the surface of the wash film 102. However, the embodiments are not limited thereto, and various suitable coating methods known may be used, such as spraying, dip coating, blade coating, printing methods such as inkjet printing and / or screen printing, and / or similar methods.

[0098] The process of coating the resist underlayer can be omitted; the following description further includes the process of coating the resist underlayer.

[0099] The coated composition is then dried and baked to form a resist underlayer 104 on the film 102. Baking can be performed at a temperature of about 100°C to about 500°C, for example, about 100°C to about 300°C.

[0100] The resist underlayer 104 is formed between the substrate 100 and the photoresist layer 106, thereby preventing or reducing the non-uniformity of photoresist linewidth and the reduction in patterning capability that may occur due to light scattering from the interface between the substrate 100 and the photoresist layer 106 and / or the interlayer hard mask to the unintended photoresist area.

[0101] Referring to FIG1B, a photoresist layer 106 is formed by coating a semiconductor photoresist composition onto a resist substrate 104. The photoresist layer 106 is obtained by coating the aforementioned semiconductor photoresist composition onto a thin film 102 formed on a substrate 100 and then curing it by heat treatment.

[0102] In an embodiment, patterning using a semiconductor photoresist composition may include coating a semiconductor photoresist composition on a substrate 100 having a thin film 102 by spin coating, slot coating, inkjet printing and / or similar methods, and then drying to form a photoresist layer 106.

[0103] The semiconductor photoresist composition has been described in detail and will not be repeated here.

[0104] Subsequently, a first baking process is performed on the substrate 100 having the photoresist layer 106. The first baking process can be performed at a temperature of about 80°C to about 120°C.

[0105] Referring to Figure 1C, a patterned mask 110 can be used to selectively expose the photoresist layer 106.

[0106] For example, exposure can use activating radiation including light with high-energy wavelengths, such as EUV (extreme ultraviolet; wavelength about 13.5 nanometers), electron beam (E-Beam) and / or similar light sources, as well as i-line (wavelength about 365 nanometers), KrF excimer laser (wavelength about 248 nanometers), ArF excimer laser (wavelength about 193 nanometers) and / or similar light sources.

[0107] According to some embodiments, the light used for exposure may have wavelengths in the range of about 5 nanometers to about 150 nanometers and high-energy wavelengths, such as EUV (extreme ultraviolet; wavelength 13.5 nanometers), electron beam (E-Beam) and / or similar light sources.

[0108] The exposed region 106b of the photoresist layer 106 has a different solubility than the unexposed region 106a of the photoresist layer 106 by forming a polymer, which is formed by cross-linking reactions such as condensation reactions between organometallic compounds.

[0109] Subsequently, a second baking process is performed on the substrate 100. The second baking process can be performed at a temperature of about 90°C to about 200°C. Due to the second baking process, the exposed area 106b of the photoresist layer 106 becomes less soluble in the developer.

[0110] In Figure 1D, a developer is used to dissolve and remove the unexposed areas 106a of the photoresist layer to form a photoresist pattern 108. Specifically, the photoresist pattern 108 corresponding to a negative image is completed by using an organic solvent such as 2-heptanone and / or the like to dissolve and remove the unexposed areas 106a of the photoresist layer.

[0111] As described above, according to some embodiments, the developer used in the pattern forming method may be an organic solvent. According to some embodiments, the organic solvent used in the pattern forming method may be, for example, ketones such as methyl ethyl ketone, acetone, cyclohexanone, 2-heptanone and / or similar; alcohols such as 4-methyl-2-propanol, 1-butanol, isopropanol, 1-propanol, methanol and / or similar; esters such as propylene glycol monomethyl ether acetate, ethyl acetate, ethyl lactate, n-butyl acetate, butyrolactone and / or similar; aromatic compounds such as benzene, xylene, toluene and / or similar, or combinations thereof.

[0112] However, the photoresist pattern according to some embodiments is not necessarily limited to negative images, but can be formed to have positive images. Here, the developer used to form the positive image can be a quaternary ammonium hydroxide composition, such as tetraethylammonium hydroxide, tetrapropylammonium hydroxide, tetrabutylammonium hydroxide, or a combination thereof.

[0113] As described above, exposure to high-energy light, such as EUV (extreme ultraviolet; wavelength 13.5 nm), electron beam (E-Beam), and / or similar light sources, as well as light with specific wavelengths, such as i-line (wavelength approximately 365 nm), KrF excimer laser (wavelength approximately 248 nm), ArF excimer laser (wavelength approximately 193 nm), and / or similar light sources, can provide a photoresist pattern 108 with a width of approximately 5 nm to approximately 100 nm. For example, the photoresist pattern 108 may have a width of approximately 5 nm to approximately 90 nm, approximately 5 nm to approximately 80 nm, approximately 5 nm to approximately 70 nm, approximately 5 nm to approximately 60 nm, approximately 5 nm to approximately 50 nm, approximately 5 nm to approximately 40 nm, approximately 5 nm to approximately 30 nm, or approximately 5 nm to approximately 20 nm.

[0114] In an embodiment, the photoresist pattern 108 may have a pitch of less than or equal to about 50 nanometers (e.g., less than or equal to about 40 nanometers, for example, less than or equal to about 30 nanometers, for example, less than or equal to about 20 nanometers, or for example, less than or equal to about 15 nanometers) and a linewidth roughness of less than or equal to about 10 nanometers, or a linewidth roughness of less than or equal to about 5 nanometers, less than or equal to about 3 nanometers, or less than or equal to about 2 nanometers.

[0115] Subsequently, the photoresist pattern 108 is used as an etching mask to etch the resist substrate 104. Through this etching process, an organic layer pattern 112 is formed. The organic layer pattern 112 may also have a width corresponding to the photoresist pattern 108.

[0116] Referring to FIG1E, the exposed thin film 102 is etched by applying a photoresist pattern 108 as an etching mask. As a result, the thin film is formed as a thin film pattern 114.

[0117] The etching of the thin film 102 can be, for example, dry etching using an etching gas, such as CHF 3, CF 4, Cl 2, BCl 3 and / or a mixture thereof.

[0118] In the exposure process, the thin film pattern 114 formed using the photoresist pattern 108 formed by the exposure process using an EUV light source can have a width corresponding to the photoresist pattern 108. For example, the thin film pattern 114 can have a width of about 5 nanometers to about 100 nanometers, which is equal to the width of the photoresist pattern 108. For example, the thin film pattern 114 formed using the photoresist pattern 108 formed by the exposure process using an EUV light source can have a width of about 5 nanometers to about 90 nanometers, about 5 nanometers to about 80 nanometers, about 5 nanometers to about 70 nanometers, about 5 nanometers to about 60 nanometers, about 5 nanometers to about 50 nanometers, about 5 nanometers to about 40 nanometers, about 5 nanometers to about 30 nanometers, or about 5 nanometers to about 20 nanometers, for example, a width less than or equal to about 20 nanometers, similar to the width of the photoresist pattern 108.

[0119] The embodiments of this disclosure will be described in more detail through examples of the preparation of the above-described semiconductor photoresist compositions. However, this disclosure is not technically limited to the following examples. Synthesis of organometallic compounds [] [Synthesis Example] [1]

[0120] Add 40.7 g of tert-butyltriphenyltin and 300 g of propionic acid to a 250 mL double-necked round-bottom flask, and then heat under reflux for 24 hours.

[0121] By removing unreacted propionic acid under reduced pressure, a compound represented by chemical formula 5 was obtained. [Chemical Formula 5] [Synthesis Example] [2]

[0122] 30 mL of anhydrous pentane was added to 10 g of tert-amyltin trichloride, and the temperature was maintained at 0°C. Then, 7.4 g of diethylamine and 6.1 g of ethanol were added, and the mixture was stirred at room temperature for 1 hour. After the reaction was complete, the product was filtered, concentrated, and dried under vacuum to obtain the compound represented by chemical formula 6. [Chemical Formula 6] [Synthesis Example] [3]

[0123] 10 g of dibutyltin dichloride was dissolved in 30 mL of diethyl ether, and 70 mL of 1 M sodium hydroxide (NaOH) aqueous solution was added. The mixture was then stirred for 1 hour. After stirring, the resulting solid was filtered, washed three times with 25 mL of deionized water, and dried under reduced pressure at 100°C to obtain an organometallic compound represented by chemical formula 7 with a weight-average molecular weight of 1,500. [] [Chemical Formula 7] [Preparation of Semiconductor Photoresist Composition] [] [Example] [1] [to]

[14] [And comparative examples] [1] [to] [4]

[0124] The organometallic compounds and dicarboxylic acid compounds represented by chemical formulas 5 to 7 of the synthetic examples 1 to 3 were dissolved at a concentration of 3% by weight in a mixed solution of propylene glycol methyl ether acetate (PGMEA) and propylene glycol methyl ether (PGME) mixed together in a weight ratio of 7:3, as shown in Table 1, and then filtered through a 0.1-micron PTFE (polytetrafluoroethylene) syringe filter to prepare semiconductor photoresist compositions. [surface] [1] Organometallic compounds (weight%) Dicarboxylic acid compounds (wt%) Example 1 Chemical formula 5 (2.85) Glutaric acid (0.15) Example 2 Chemical formula 5 (2.85) Pimelic acid (0.15) Example 3 Chemical formula 5 (2.85) 2-Methylsuccinic acid (0.15) Example 4 Chemical formula 5 (2.85) L-Aspartic acid (0.15) Example 5 Chemical formula 5 (2.85) Cyclohexanedicarboxylic acid (0.15) Example 6 Chemical formula 5 (2.83) Glutaric acid (0.17) Example 7 Chemical formula 5 (2.80) Glutaric acid (0.20) Example 8 Chemical formula 5 (2.75) Glutaric acid (0.25) Example 9 Chemical formula 6 (2.85) Glutaric acid (0.15) Example 10 Chemical formula 6 (2.85) Pimelic acid (0.15) Example 11 Chemical formula 6 (2.85) 2-Methylsuccinic acid (0.15) Example 12 Chemical formula 7 (2.85) Glutaric acid (0.15) Example 13 Chemical formula 7 (2.85) Pimelic acid (0.15) Example 14 Chemical formula 7 (2.85) 2-Methylsuccinic acid (0.15) Comparison Example 1 Chemical formula 5 (2.85) adamantane carboxylic acid (0.15g) Comparison Example 2 Chemical formula 5 (2.85) Succinic acid (0.15) Comparison Example 3 Chemical formula 6 (2.85) Succinic acid (0.15) Comparison Example 4 Chemical formula 7 (2.85) Succinic acid (0.15) [evaluate] [1] Sensitivity and line edge roughness [(LER)] [Evaluation] []

[0125] The photoresist compositions of the examples and comparative examples were spin-coated at 1500 rpm for 30 seconds on a 200 mm circular silicon wafer with hexamethyldisilazane (HMDS) deposited on its surface, and then baked at 110 °C for 60 seconds. After coating, they were baked (post-coating baking, PAB) and placed at room temperature (23 ± 2 °C) for 30 seconds.

[0126] Then, extreme ultraviolet light (ULE) (Lawrence Berkeley National Laboratory Microexposure Tool, MET) was used to project a linear array of 50 circular pads, each 500 micrometers in diameter, onto a wafer coated with a photoresist composition. Here, the pad exposure time was adjusted to ensure that an increased dose of extreme ultraviolet light was applied to each pad.

[0127] Then, after exposure, the resist and substrate are baked on a hot plate at 160°C for 120 seconds. The baked film is developed with PGMEA solvent to form a negative image. Finally, the obtained film is baked again on a hot plate at 150°C for 2 minutes to complete the process.

[0128] The residual resist thickness of the exposure pads was measured using an ellipsometry. The remaining thickness was measured for each exposure dose and plotted as a function of the exposure dose to measure sensitivity. Line edge roughness was also measured from FE-SEM images. Sensitivity and line edge roughness were evaluated according to the following criteria, and the results are shown in Table 2. [Sensitivity Evaluation Criteria] [] - A: Less than 16 millijoules per square centimeter - B: Greater than or equal to 16 millijoules per square centimeter [Edge Roughness Evaluation Criteria] [] - ○: Less than or equal to 2 nanometers - △: Greater than 2 nanometers and less than or equal to 5 nanometers - X: Greater than 5 nanometers [surface] [2] Sensitivity Line edge roughness Example 1 A ○ Example 2 A ○ Example 3 A ○ Example 4 A ○ Example 5 A ○ Example 6 A ○ Example 7 A ○ Example 8 A ○ Example 9 A ○ Example 10 A ○ Example 11 A ○ Example 12 A ○ Example 13 A ○ Example 14 A ○ Comparison Example 1 B X Comparison Example 2 A △ Comparison Example 3 A △ Comparison Example 4 A △

[0129] As can be seen from the results in Table 2, the patterns formed using the semiconductor photoresist compositions of Examples 1 to 14 exhibit superior sensitivity and LER compared to Comparative Examples 1 to 4.

[0130] Prior to this, certain embodiments have been described and illustrated. However, it will be apparent to those skilled in the art that this disclosure is not limited to the described embodiments, and various modifications and transformations can be made without departing from the spirit and scope of this disclosure. Therefore, these modified or transformed embodiments should not be understood separately from the technical concept and aspects of this disclosure, and the modified embodiments are within the scope of the claims and their equivalents of this disclosure.

[0131] 100:Substrate 102:Film 104: Resist underlayer 106: Photoresist layer 106a: Unexposed area 106b: Exposure area 108: Photoresist pattern 112: Organic layer pattern 110: Patterned Mask 114: Thin Film Pattern

Claims

1. A semiconductor photoresist composition, comprising: Sn-containing organometallic compounds; Compounds represented by chemical formula 1; And solvent: Formula 1, wherein in Formula 1, R1 is an unsubstituted C3 to C10 alkylene, a substituted C1 to C10 alkylene, a substituted or unsubstituted C4 to C20 cycloalkylene, a substituted or unsubstituted C4 to C20 cycloalkenylene, a substituted or unsubstituted C3 to C5 alkylene, a substituted or unsubstituted C3 to C5 alkynylene, a substituted or unsubstituted C6 to C30 arylene, a substituted or unsubstituted C2 to C30 heterocycloalkylene, a substituted or unsubstituted C2 to C30 heteroarylene, or a combination thereof, wherein the compound represented by Formula 1 is included in an amount of 0.01 to 10% by weight based on 100% by weight of the semiconductor photoresist composition, and wherein the Sn-containing organometallic compound is included in an amount of 0.5% to 30% by weight based on 100% by weight of the semiconductor photoresist composition.

2. The semiconductor photoresist composition as claimed in claim 1, wherein: R1 is derived from the following divalent linkers: substituted methane, substituted ethane, substituted or unsubstituted propane, substituted or unsubstituted butane, substituted or unsubstituted pentane, substituted or unsubstituted cyclopentane, substituted or unsubstituted cyclopentene, substituted or unsubstituted cyclohexane, substituted or unsubstituted tetrahydropyran, substituted or unsubstituted 1,4-dioxane, substituted or unsubstituted tetrahydrothiapyran, substituted or unsubstituted 1,4-oxathiane, substituted or unsubstituted 1,4-dithiane, substituted or unsubstituted tetrahydrothiophene, substituted or unsubstituted dihydrothiophene, substituted or unsubstituted thiophene, substituted or unsubstituted tetrahydrofuran, substituted or unsubstituted tetrahydrothiophene... Substituted dihydrofuran, substituted or unsubstituted furan, substituted or unsubstituted oxazolidine, substituted or unsubstituted oxazole, substituted or unsubstituted oxazoline, substituted or unsubstituted pyrrolidine, substituted or unsubstituted pyrrolidine, substituted or unsubstituted pyrrole, substituted or unsubstituted imidazoline, substituted or unsubstituted imidazoline, substituted or unsubstituted imidazoline, substituted or unsubstituted pyrazole, substituted or unsubstituted pyrrolidine, substituted or unsubstituted pyrrolidine, substituted or unsubstituted pyridine, substituted or unsubstituted pyrazine, substituted or unsubstituted pyridine, substituted or unsubstituted oxazine, or substituted or unsubstituted pyrazine.

3. The semiconductor photoresist composition as claimed in claim 1, wherein: The compound represented by chemical formula 1 is one of the compounds listed in Group 1: Group 1.

4. The semiconductor photoresist composition as claimed in claim 1, wherein: The compound represented by chemical formula 1 is glutaric acid, pimelic acid, methylsuccinic acid, phthalic acid, cyclohexanedicarboxylic acid, furandicarboxylic acid, or a combination thereof.

5. The semiconductor photoresist composition as claimed in claim 1, wherein: The semiconductor photoresist composition comprises, in an amount of 0.05 to 5% by weight, the compound represented by chemical formula 1.

6. The semiconductor photoresist composition as claimed in claim 1, wherein: The Sn-containing organometallic compound and the compound represented by chemical formula 1 are included in a weight ratio of 99.9:0.1 to 80:

20.

7. The semiconductor photoresist composition as claimed in claim 1, wherein: The semiconductor photoresist composition further includes surfactants, crosslinking agents, leveling agents, organic acids, quenchers, or combinations thereof as additives.

8. The semiconductor photoresist composition as claimed in claim 1, wherein: The Sn-containing organometallic compound includes at least one of an organooxy group and an organocarbonyloxy group.

9. The semiconductor photoresist composition as claimed in claim 1, wherein: The Sn-containing organometallic compound is represented by Chemical Formula 2: Chemical Formula 2 Wherein, in Chemical Formula 2, R2 is selected from substituted or unsubstituted C1 to C20 alkyl, substituted or unsubstituted C3 to C20 cycloalkyl, substituted or unsubstituted C2 to C20 alkenyl, substituted or unsubstituted C2 to C20 alkynyl, substituted or unsubstituted C6 to C30 aryl, substituted or unsubstituted C6 to C30 aralkyl, and La-O-Ra, wherein La is a substituted or unsubstituted C1 to C20 alkenyl, and Ra is a substituted or unsubstituted C1 to C20 alkyl. R3 to R5 are each independently a substituted or unsubstituted C1 to C20 alkyl, a substituted or unsubstituted C3 to C20 cycloalkyl, a substituted or unsubstituted C2 to C20 alkenyl, a substituted or unsubstituted C2 to C20 alkynyl, a substituted or unsubstituted C6 to C30 aryl, a substituted or unsubstituted C6 to C30 aralkyl, -ORb, or -OC(=O)Rc, wherein at least one selected from R3 to R5 is selected from -ORb and -OC(=O)Rc. Rb is a substituted or unsubstituted C1 to C20 alkyl, a substituted or unsubstituted C3 to C20 cycloalkyl, a substituted or unsubstituted C2 to C20 alkenyl, a substituted or unsubstituted C2 to C20 alkynyl, a substituted or unsubstituted C6 to C30 aryl, or a combination thereof, and Rc is hydrogen, a substituted or unsubstituted C1 to C20 alkyl, a substituted or unsubstituted C3 to C20 cycloalkyl, a substituted or unsubstituted C2 to C20 alkenyl, a substituted or unsubstituted C2 to C20 alkynyl, a substituted or unsubstituted C6 to C30 aryl, or a combination thereof.

10. The semiconductor photoresist composition as claimed in claim 9, wherein: R2 is a substituted or unsubstituted C1 to C8 alkyl group, a substituted or unsubstituted C3 to C8 cycloalkyl group, a substituted or unsubstituted C2 to C8 aliphatic unsaturated organogroup including one or more double or triple bonds, a substituted or unsubstituted C6 to C20 aryl group, a substituted or unsubstituted C4 to C20 heteroaryl group, a carbonyl group, an ethoxy group, a propoxy group, or a combination thereof. Rb is a substituted or unsubstituted C1 to C8 alkyl, a substituted or unsubstituted C3 to C8 cycloalkyl, a substituted or unsubstituted C2 to C8 alkenyl, a substituted or unsubstituted C2 to C8 alkynyl, a substituted or unsubstituted C6 to C20 aryl, or a combination thereof, and Rc is hydrogen, a substituted or unsubstituted C1 to C8 alkyl, a substituted or unsubstituted C3 to C8 cycloalkyl, a substituted or unsubstituted C2 to C8 alkenyl, a substituted or unsubstituted C2 to C8 alkynyl, a substituted or unsubstituted C6 to C20 aryl, or a combination thereof.

11. The semiconductor photoresist composition as claimed in claim 1, wherein: The Sn-containing organometallic compounds are represented by chemical formula 3 or chemical formula 4: Chemical Formula 3: R6zSnO(2-(z / 2)-(x / 2))(OH)x Wherein, in chemical formula 3, R6 is a C1 to C31 hydrocarbon group, 0 < z ≤ 2, and 0 < (z+x) ≤ 4; Chemical Formula 4: R7nSnmXlYk Wherein, in chemical formula 4, R7 is a substituted or unsubstituted C1 to C20 alkyl group, a substituted or unsubstituted C3 to C20 cycloalkyl group, a substituted or unsubstituted C2 to C20 aliphatic unsaturated organogroup including one or more double or triple bonds, a substituted or unsubstituted C6 to C30 aryl group, a substituted or unsubstituted C4 to C30 heteroaryl group, a carbonyl group, an ethylene oxide group, an propylene oxide group, or a combination thereof, X is sulfur, selenium, or tellurium, and Y is -ORm or -OC(=O)Rn. Wherein Rm is a substituted or unsubstituted C1 to C20 alkyl, a substituted or unsubstituted C3 to C20 cycloalkyl, a substituted or unsubstituted C2 to C20 alkenyl, a substituted or unsubstituted C2 to C20 alkynyl, a substituted or unsubstituted C6 to C30 aryl, or a combination thereof, and Rn is hydrogen, a substituted or unsubstituted C1 to C20 alkyl, a substituted or unsubstituted C3 to C20 cycloalkyl, a substituted or unsubstituted C2 to C20 alkenyl, a substituted or unsubstituted C2 to C20 alkynyl, a substituted or unsubstituted C6 to C30 aryl, or a combination thereof, and n, m, l, and k are each independently an integer from 1 to 20.

12. A method for forming a pattern, comprising: An etching target layer is formed on the substrate; The semiconductor photoresist composition as described in any one of claims 1 to 11 is coated on the etch target layer to form a photoresist layer; the photoresist layer is patterned to form a photoresist pattern; and the etch target layer is etched using the photoresist pattern as an etch mask.

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