Substrate processing system

Abstract

The substrate processing system of the present invention includes a rotation mechanism that controls a lift to immerse a batch of substrates, which have been converted to the aforementioned vertical position, in the aforementioned batch processing tank for a first batch processing. The lift is then controlled to immerse the batch of substrates, which have been converted to the aforementioned vertical position, in the aforementioned batch processing tank for a second batch processing, causing the substrates to rotate around the normal of the substrates. After the aforementioned first batch processing and before the aforementioned second batch processing, the rotation mechanism is controlled to perform the aforementioned second batch processing in an upside-down orientation relative to the orientation of the substrates in the aforementioned first batch processing.

Description

Technical Field

[0001] This invention relates to a substrate processing system for processing various substrates, such as semiconductor substrates, substrates for FPD (Flat Panel Display) devices (liquid crystal displays or organic EL (Electroluminescence) display devices), glass substrates for photomasks, and substrates for optical discs. Prior Technology

[0002] Previously, such devices have existed that include batch processing modules and single-wafer modules (see, for example, Patent Document 1). Batch processing modules perform predetermined processing on a batch of multiple substrates. Single-wafer modules perform predetermined processing on one substrate at a time. Batch processing modules and single-wafer modules each have their inherent advantages. By combining the advantages of both batch processing modules and single-wafer modules, a substrate processing device achieves a configuration that is more advantageous than either batch processing device or single-wafer substrate processing device.

[0003] <List of Previous Technical Documents> Japanese Patent Application Publication No. 2021-64654

[0004] However, the above configuration has problems with batch processing modules. Batch processing modules employ a configuration in which a vertically positioned substrate is immersed in a batch processing tank. As a result, batch processing differences occur between the lower part of the substrate located at the bottom of the batch processing tank and the upper part of the substrate located at the surface of the batch processing tank, resulting in uneven substrate distribution.

[0005] The present invention was made in view of this situation and provides a substrate processing system capable of producing high-quality substrates. Summary of the Invention

[0006] In order to solve the above-mentioned problems, the present invention adopts the following configuration. That is, the substrate processing system of the present invention is characterized in that it is a substrate processing system and includes: A batch processing apparatus that performs batch processing on multiple substrates in a single batch. A single-wafer processing device that performs single-wafer processing, processing one substrate at a time; The relay device transfers the batch-processed substrates from the aforementioned batch processing device to the aforementioned single-wafer processing device; and The control unit controls the aforementioned batch processing device, the aforementioned single-chip processing device, and the aforementioned relay device; and The aforementioned batch processing device includes: At least one batch processing tank; The first mounting section is capable of mounting a carrier that holds a plurality of substrates horizontally with predetermined intervals along the vertical direction; The substrate acquisition and conveying mechanism removes the substrate from the carrier placed in the aforementioned first placement section; The first posture conversion mechanism converts the substrate taken from the aforementioned carrier by the aforementioned substrate acquisition and conveying mechanism from a horizontal posture to a vertical posture; and An elevator is capable of immersing a batch of multiple substrates in a vertical position, which have been postured by the aforementioned first posture conversion mechanism, into the aforementioned batch processing tank; The aforementioned single-chip processing device includes: The single-piece drying section enables the drying of one horizontally oriented substrate at a time after batch processing. The second mounting section is capable of mounting the aforementioned frame; and A storage and conveying mechanism that moves the horizontally positioned substrate into a carrier placed in the aforementioned second placement section; The aforementioned relay device includes: The second posture conversion mechanism converts the substrate received from the aforementioned batch processing device from a vertical posture to a horizontal posture; and The relay conveying mechanism is capable of conveying one substrate at a time to the aforementioned single-piece processing device, which has undergone attitude conversion by the aforementioned second attitude conversion mechanism. The aforementioned control unit sequentially performs the following series of actions: (1) Control the aforementioned substrate acquisition and conveying mechanism to remove the substrate from the first carrier placed in the aforementioned first placement section; (2) Control the aforementioned first posture conversion mechanism to change the substrate taken out from the aforementioned first carrier from a horizontal posture to a vertical posture; (3) Control the aforementioned elevator to immerse the multiple substrates, which have been converted to the aforementioned vertical posture, in the aforementioned batch processing tank for the first batch processing; (4) Control the aforementioned second posture conversion mechanism to convert the substrate that has undergone the aforementioned first batch processing from a vertical posture to a horizontal posture; (5) Control the aforementioned relay conveying mechanism to transport the substrate, which has been converted to the aforementioned horizontal posture, from the aforementioned batch processing device to the aforementioned single-wafer processing device; (6) Control the aforementioned storage and conveying mechanism to move the horizontally positioned substrate, which has been conveyed to the aforementioned single-wafer processing device, into the second carrier placed in the aforementioned second placement section; (7) When the second carrier containing the substrate that has undergone the first batch processing is placed in the first placement section of the batch processing device, the substrate acquisition and conveying mechanism is controlled to remove the substrate from the second carrier placed in the first placement section; (8) Control the aforementioned first posture conversion mechanism to change the substrate taken out from the aforementioned second carrier from a horizontal posture to a vertical posture; (9) Control the aforementioned elevator to immerse the multiple substrates, which have been converted to the aforementioned vertical posture, in the aforementioned batch processing tank for a second batch processing; (10) Control the aforementioned second posture conversion mechanism to convert the substrate that has undergone the aforementioned second batch processing from a vertical posture to a horizontal posture; (11) Control the aforementioned relay conveying mechanism to transport the substrate, which has been converted to the aforementioned horizontal posture, from the aforementioned batch processing device to the aforementioned single-wafer processing device; (12) Control the aforementioned single-piece drying section to dry one substrate at a time in a horizontal position that is transported to the aforementioned single-piece processing device; (13) Control the aforementioned storage and conveying mechanism to move the horizontally positioned substrate that has undergone the aforementioned drying treatment into the third carrier placed in the aforementioned second placement section; The aforementioned substrate processing system further includes: A rotating mechanism that causes the aforementioned substrate to rotate about the normal of the substrate; The aforementioned control unit, After the first batch processing and before the second batch processing, the aforementioned rotation mechanism is controlled so that the second batch processing is performed in an up-down reversed posture relative to the posture of the substrate in the first batch processing.

[0007] [Function and Effect] According to the above configuration, the control unit controls the receiving and conveying mechanism to receive the substrates that have completed the first batch processing in the second carrier. Furthermore, the control unit controls the substrate retrieval and conveying mechanism to remove the substrates from the second carrier for the second batch processing. At this time, the control unit controls the rotation mechanism to reverse the substrates vertically before the second batch processing. With this configuration, the batch processing differences between the lower part of the substrate located at the bottom of the batch processing tank and the upper part of the substrate located at the surface of the batch processing tank are homogenized, thus providing a substrate processing system capable of manufacturing high-quality devices.

[0008] Furthermore, in the aforementioned substrate processing system, it is preferable that... The aforementioned batch processing tank includes a nozzle at the bottom for ejecting fluid; and In the aforementioned first batch processing and the aforementioned second batch processing, the aforementioned control unit, Control the aforementioned batch processing tank to spray fluid from the bottom, thereby agitating the processing liquid.

[0009] [Function and Effect] According to the above configuration, since the processing liquid is stirred up and down while batch processing is performed, high-efficiency batch processing can be performed. Furthermore, according to the substrate processing system of the present invention, even if the configuration of stirring the processing liquid up and down while batch processing is performed, the inhomogeneity of the substrate processing generated in batch processing will be homogenized, thus enabling the manufacture of high-quality devices.

[0010] Furthermore, the aforementioned substrate processing system preferably includes: The carrier conveying mechanism transports the aforementioned second carrier from the aforementioned second placement section to the aforementioned first placement section.

[0011] [Function and Effect] According to the above configuration, a conveying mechanism is included, which transports the second carrier from the second placement section to the first placement section. With this configuration, the transport of the second carrier from the second placement section to the first placement section can be performed in the substrate processing system. With this configuration, the transport of the second carrier can be performed without relying on manual transport or transport by a carrier transport crane equipped in the factory.

[0012] Furthermore, in the aforementioned substrate processing system, it is preferable that... The aforementioned control unit, The aforementioned single-piece drying unit controls the substrate to be dried one at a time after the first batch processing, changing its orientation to a horizontal orientation and being transported to the aforementioned single-piece processing device.

[0013] [Function and Effect] According to the above configuration, after the first batch processing, the single-wafer drying unit changes its orientation to a horizontal position and is transported to the single-wafer processing device for drying one substrate at a time. With this configuration, just like after the second batch processing, the substrate can be fully dried after the first batch processing, thus enabling the manufacture of high-quality devices.

[0014] Furthermore, in the aforementioned substrate processing system, it is preferable that... The aforementioned batch processing device includes: The batch drying section dries the entire batch of substrates that have undergone the first batch processing; and The aforementioned control unit, The aforementioned batch drying section is controlled to ensure that the entire batch of substrates processed in the first batch is dried. The aforementioned second posture conversion mechanism is controlled to convert the substrates that have undergone batch drying from a vertical posture to a horizontal posture.

[0015] [Function and Effect] Based on the above configuration, a batch drying unit is included, which dries the entire batch of substrates after the first batch processing. With such a configuration, the entire batch of substrates after the first batch processing can be dried, thus providing a substrate processing system with improved production capacity.

[0016] Furthermore, in the aforementioned substrate processing system, it is preferable that... The aforementioned relay conveying mechanism includes: a first hand that obtains the dried substrate and a second hand that obtains the substrate before drying.

[0017] [Function and Effect] Based on the above configuration, the relay conveying mechanism includes: a first hand for acquiring the dried substrate and a second hand for acquiring the substrate before drying. This configuration allows for the relaying of both the dried substrate and the substrate before drying. Since the first hand is always dry, the substrate will not be wetted by the first hand. If the second hand, which is different from the first hand, is used to transport the substrate before drying, the substrate before drying can also be reliably transported within the relay device.

[0018] Furthermore, in the aforementioned substrate processing system, it is preferable that... The aforementioned rotating mechanism is composed of a spin clamp disposed in the single-wafer processing chamber of the aforementioned single-wafer processing device; and The aforementioned spin clamp causes the horizontally positioned substrate to rotate half a turn around the vertical axis and then deliver it to the aforementioned storage and conveying mechanism.

[0019] [Function and Effect] According to the above configuration, the rotating mechanism is composed of a spin clamp in a single-piece processing chamber. The spin clamp rotates the horizontally positioned substrate received around a vertical axis by half a turn and then delivers it to the receiving and conveying mechanism. With this configuration, the rotating mechanism can be implemented using existing configurations. That is, the present invention can be realized by changing the control of existing device configurations.

[0020] Furthermore, in the aforementioned substrate processing system, it is preferable that... The aforementioned single-piece drying section is composed of a single-piece processing chamber disposed in the aforementioned single-piece processing device; and The aforementioned single-wafer processing chamber dries the substrate by spin drying.

[0021] [Function and Effect] Based on the above configuration, the single-piece drying section is composed of a single-piece processing chamber, and the substrate is dried by spin drying. Therefore, a device with a proven track record of long-term use can be used to construct the single-piece drying section.

[0022] Furthermore, in the aforementioned substrate processing system, it is preferable that... The aforementioned rotating mechanism is located at the retraction position of the aforementioned relay device; and The aforementioned rotating mechanism causes the substrate, which has been moved to the horizontal position, to rotate half a turn around the vertical axis.

[0023] [Function and Effect] According to the above configuration, the rotating mechanism is located at the take-out position of the relay device, and the rotating mechanism causes the substrate in a horizontal position taken out to rotate half a turn around the vertical axis. With this configuration, the present invention can be implemented even without changing the control method of the single-piece drying section. Furthermore, this configuration is suitable for substrate processing systems equipped with single-piece drying sections that do not have a self-rotating clamp.

[0024] Furthermore, in the aforementioned substrate processing system, it is preferable that... The aforementioned single-piece drying section uses supercritical fluid to dry the substrate.

[0025] [Function and Effect] Based on the above configuration, the single-piece drying section uses a supercritical fluid to dry the substrate. With this configuration, the substrate can be dried without damaging the circuitry formed on the device surface, thus providing a substrate processing system capable of producing high-quality devices.

[0026] Furthermore, in the aforementioned substrate processing system, it is preferable that... The aforementioned rotating mechanism is disposed in the aforementioned batch processing device; and The aforementioned rotating mechanism causes multiple substrates, which are in a vertical position, to rotate half a circle around a horizontal axis and reverse their orientation.

[0027] [Function and Effect] According to the above configuration, the rotation mechanism is provided in the batch processing device. The rotation mechanism causes multiple substrates in a vertical position to rotate half a turn around a horizontal axis and then reverse their orientation. With this configuration, the time required to rotate the substrates half a turn can be shortened, thus providing a substrate processing system with improved production capacity.

[0028] Furthermore, in the aforementioned substrate processing system, it is preferable that... The aforementioned monolithic processing device includes a path capable of mounting a horizontally oriented substrate; and The aforementioned storage and delivery services include: The first robot is capable of receiving the aforementioned relay device at its removal location, the aforementioned single-piece drying section, and the aforementioned path; and The second robot is capable of accessing the aforementioned path and the aforementioned second mounting unit; The aforementioned first robot is positioned in a location surrounded by the aforementioned substrate drying section.

[0029] [Function and Effect] According to the above configuration, the monolithic processing apparatus includes a path capable of carrying a substrate in a horizontal orientation. Furthermore, the above configuration includes a first robot capable of receiving the path, the transfer position of the relay device, and the monolithic drying section. The first robot is positioned within the substrate drying section. According to the above configuration, by optimizing the configuration of the substrate processing system, a substrate processing system capable of rapidly performing substrate processing based on highly efficient substrate transport can be provided.

[0030] Furthermore, in the aforementioned substrate processing system, it is preferable that... The aforementioned batch processing apparatus has its first mounting section and the aforementioned batch processing tank arranged in a front-to-back direction; and The aforementioned insertion and removal positions of the relay device are arranged along a left-right direction orthogonal to the aforementioned front-back direction; The second mounting section and the aforementioned single-piece drying section of the aforementioned single-piece processing device are arranged in the aforementioned front-back direction.

[0031] [Function and Effect] According to the above configuration, the first mounting section and the batch processing tank of the batch processing device are arranged in the front-to-back direction, the transfer position and the transfer position of the relay device are arranged in the left-to-right direction, and the second mounting section and the single-wafer drying section of the single-wafer processing device are arranged in the front-to-back direction. According to the above configuration, since the configuration of the substrate processing system is optimized, a substrate processing system that can quickly perform substrate processing based on highly efficient substrate transport can be provided.

[0032] Furthermore, in the aforementioned substrate processing system, it is preferable that... The aforementioned batch processing apparatus comprises the first mounting section, the aforementioned batch drying section, and the aforementioned batch processing tank arranged in a front-to-back direction; and The aforementioned insertion and removal positions of the relay device are arranged along a left-right direction orthogonal to the aforementioned front-back direction; The second mounting section and the aforementioned single-piece drying section of the aforementioned single-piece processing device are arranged in the aforementioned front-back direction.

[0033] [Function and Effect] According to the above configuration, the first mounting section, batch drying section, and batch processing tank of the batch processing apparatus are arranged in the front-to-back direction, the relay device's loading and unloading positions are arranged in the left-to-right direction, and the second mounting section and single-wafer drying section of the single-wafer processing apparatus are arranged in the front-to-back direction. Based on the above configuration, by optimizing the configuration of the substrate processing system, a substrate processing system that can rapidly perform substrate processing based on highly efficient substrate transport can be provided.

[0034] Furthermore, in the aforementioned substrate processing system, it is preferable that... The aforementioned batch processing apparatus, including the first mounting section, the aforementioned rotating mechanism, and the aforementioned batch processing tank, is arranged along the front-to-back direction; and The aforementioned insertion and removal positions of the relay device are arranged along a left-right direction orthogonal to the aforementioned front-back direction; The second mounting section and the aforementioned single-piece drying section of the aforementioned single-piece processing device are arranged in the aforementioned front-back direction.

[0035] [Function and Effect] According to the above configuration, the first mounting section, rotating mechanism, and batch processing tank of the batch processing apparatus are arranged in the front-to-back direction, the transfer position and the transfer position of the relay device are arranged in the left-to-right direction, and the second mounting section and the single-wafer drying section of the single-wafer processing apparatus are arranged in the front-to-back direction. Based on the above configuration, by optimizing the configuration of the substrate processing system, a substrate processing system that can rapidly perform substrate processing based on highly efficient substrate transport can be provided.

[0036] According to the present invention, a substrate processing system capable of producing high-quality substrates can be provided. Simple Explanation of the Diagram

[0037] Figure 1 is a top view illustrating the overall structure of the substrate processing system of the embodiment. Figure 2 is a top view illustrating the overall structure of the batch processing device of the embodiment. Figure 3 is a perspective view illustrating the structure of the HVC posture conversion unit in the embodiment. Figure 4(a) is a schematic diagram illustrating the batch grouping of the transfer blocks in the embodiment. Figure 4(b) is a schematic diagram illustrating the batch grouping of the transfer blocks in the embodiment. Figure 4(c) is a schematic diagram illustrating the batch grouping of the transfer blocks in the embodiment. Figure 4(d) is a schematic diagram illustrating the batch grouping of the transfer blocks in the embodiment. Figure 4(e) is a schematic diagram illustrating the batch grouping of the transfer blocks in the embodiment. Figure 4(f) is a schematic diagram illustrating the batch grouping of the transfer blocks in the embodiment. Figure 5(a) is a schematic diagram illustrating the batch processing tank of the embodiment and a top view illustrating the structure of the relay conveying mechanism in the embodiment. Figure 5(b) is a schematic diagram illustrating the batch processing tank of the embodiment and a top view illustrating the structure of the relay conveying mechanism in the embodiment. Figure 6(a) is a schematic diagram illustrating the relay transport in the embodiment. Figure 6(b) is a schematic diagram illustrating the relay transport in the embodiment. Figure 7(a) is a schematic diagram illustrating the relay transport in the embodiment. Figure 7(b) is a schematic diagram illustrating the relay transport in the embodiment. Figure 7(c) is a schematic diagram illustrating the relay transport in the embodiment. Figure 8(a) is a schematic diagram illustrating the relay transport in the embodiment. Figure 8(b) is a schematic diagram illustrating the relay transport in the embodiment. Figure 8(c) is a schematic diagram illustrating the relay transport in the embodiment. Figure 9(a) is a schematic diagram illustrating the relay transport in the embodiment. Figure 9(b) is a schematic diagram illustrating the relay transport in the embodiment. Figure 10(a) is a schematic diagram illustrating the relay transport in the embodiment. Figure 10(b) is a schematic diagram illustrating the relay transport in the embodiment. Figure 10(c) is a schematic diagram illustrating the relay transport in the embodiment. Figure 11(a) is a schematic diagram illustrating the relay transport in the embodiment. Figure 11(b) is a schematic diagram illustrating the relay transport in the embodiment. Figure 11(c) is a schematic diagram illustrating the relay transport in the embodiment. Figure 12(a) is a schematic diagram illustrating the relay transport in the embodiment. Figure 12(b) is a schematic diagram illustrating the relay transport in the embodiment. Figure 12(c) is a schematic diagram illustrating the relay transport in the embodiment. Figure 12(d) is a schematic diagram illustrating the relay transport in the embodiment. Figure 13(a) is a schematic diagram illustrating the relay transport in the embodiment. Figure 13(b) is a schematic diagram illustrating the relay transport in the embodiment. Figure 13(c) is a schematic diagram illustrating the relay transport in the embodiment. Figure 13(d) is a schematic diagram illustrating the relay transport in the embodiment. Figure 14(a) is a schematic diagram illustrating the relay transport in the embodiment. Figure 14(b) is a schematic diagram illustrating the relay transport in the embodiment. Figure 14(c) is a schematic diagram illustrating the relay transport in the embodiment. Figure 15(a) is a schematic diagram illustrating the relay transport in the embodiment. Figure 15(b) is a schematic diagram illustrating the relay transport in the embodiment. Figure 15(c) is a schematic diagram illustrating the relay transport in the embodiment. Figure 16 is a top view illustrating the overall structure of the single-chip processing device of the embodiment. Figure 17 is a right-side view of the single-chip processing device illustrating the embodiment. Figure 18 is a schematic diagram illustrating the structure of the single-chip processing chamber in the embodiment. Figure 19 is a flowchart illustrating the substrate processing process of an embodiment. Figure 20 is a schematic diagram illustrating the substrate processing flow of the embodiment. Figure 21 is a schematic diagram illustrating the substrate processing flow of the embodiment. Figure 22 is a schematic diagram illustrating the substrate processing flow of the embodiment. Figure 23 is a schematic diagram illustrating the substrate processing flow of the embodiment. Figure 24(a) is a schematic diagram illustrating the effect of the configuration of the embodiment. Figure 24(b) is a schematic diagram illustrating the effect of the configuration of the embodiment. Figure 24(c) is a schematic diagram illustrating the effect of the configuration of the embodiment. Figure 24(d) is a schematic diagram illustrating the effect of the configuration of the embodiment. Figure 25 is a flowchart illustrating the substrate processing process of a variation of the present invention. Figure 26 is a schematic diagram illustrating the substrate processing flow of a variation of the present invention. Figure 27 is a top view illustrating the overall structure of a substrate processing system according to a variation of the present invention. Figure 28(a) is a top view illustrating the structure of a half-circle rotating mechanism according to a variation of the present invention, and a schematic diagram illustrating the structure of a half-circle rotating mechanism according to a variation of the present invention. Figure 28(b) is a top view illustrating the structure of a half-circle rotating mechanism according to a variation of the present invention, and a schematic diagram illustrating the structure of a half-circle rotating mechanism according to a variation of the present invention. Figure 29(a) is a schematic diagram illustrating the operation of a half-circle rotating mechanism according to a variation of the present invention. Figure 29(b) is a schematic diagram illustrating the operation of a half-circle rotating mechanism according to a variation of the present invention. Figure 30(a) is a top view illustrating the operation of a half-circle rotating mechanism according to a variation of the present invention. Figure 30(b) is a top view illustrating the operation of a half-circle rotating mechanism according to a variation of the present invention. Figure 31 is a flowchart illustrating the substrate processing process of a variation of the present invention. Figure 32 is a schematic diagram illustrating the substrate processing flow of a variation of the present invention. Figure 33 is a top view illustrating the overall configuration of a batch processing apparatus according to a variation of the present invention. Figure 34(a) is a perspective view illustrating the structure of a notch arrangement mechanism according to a variation of the present invention, and a right side view illustrating a notch arrangement mechanism according to a variation of the present invention. Figure 34(b) is a perspective view illustrating the structure of a notch arrangement mechanism according to a variation of the present invention, and a right side view illustrating a notch arrangement mechanism according to a variation of the present invention. Figure 35 is a right-side view illustrating the initial state of a notch arrangement mechanism according to a variation of the present invention. Figure 36 is a right-side view illustrating the operation of a notch arrangement mechanism according to a variation of the present invention. Figure 37(a) is a right-side view illustrating the operation of a notch arrangement mechanism according to a variation of the present invention. Figure 37(b) is a right-side view illustrating the operation of a notch arrangement mechanism according to a variation of the present invention. Figure 38 is a flowchart illustrating the substrate processing process of a variation of the present invention. Figure 39 is a schematic diagram illustrating the substrate processing flow of a variation of the present invention. Figure 40 is a top view illustrating the overall structure of a substrate processing system according to a variation of the present invention. Implementation

[0038] Hereinafter, embodiments of the present invention will be described with reference to the drawings. The substrate processing system of the present invention is configured to continuously perform batch processing of multiple substrates W and single-substrate processing of one substrate W at a time, and is composed of a relay device connecting the batch processing device for batch processing and the single-substrate processing device for single-substrate processing.

[0039] The substrate processing system of this invention performs various processes on substrate W, such as chemical treatment, washing, and drying. The substrate processing system employs a hybrid processing method, which involves processing multiple substrates W in batches and processing one substrate W at a time. The batch processing method processes multiple substrates W arranged vertically in batches. The single-substrate processing method processes one substrate W at a time, arranged horizontally. The substrate processing system of this invention continuously performs both batch processing of multiple substrates and single-substrate processing. The substrate processing system of this invention includes a batch processing device and a single-substrate processing device. The batch processing device performs batch processing of substrates in batches. The single-substrate processing device performs single-substrate processing of one substrate at a time. Specific Implementation

[0040] <1. Overall Composition> The substrate processing system, as shown in Figure 1, includes: a batch processing unit 1 and a single-wafer processing unit 2, each individually configured, and a relay unit 6 connecting the two units 1 and 2. The batch processing unit 1 is related to batch processing of multiple substrates, while the single-wafer processing unit 2 is related to single-wafer processing of one substrate at a time. The relay unit 6 is configured to transfer the batch-processed substrates from the batch processing unit 1 to the single-wafer processing unit 2, and is a bridging structure located between the batch processing unit 1 and the single-wafer processing unit 2.

[0041] As shown in Figure 1, both the batch processing device 1 and the single-chip processing device 2 have blocks divided by partition walls. Specifically, the batch processing device 1 includes a storage block 3, a transfer block 5 adjacent to the storage block 3, and a batch processing block 7 adjacent to the transfer block 5. Figure 2 shows the specific configuration of the batch processing block 7 of the batch processing device 1. On the other hand, the single-chip processing device 2 includes a transfer block 4 and a single-chip processing block 8 adjacent to the transfer block 4.

[0042] Batch processing apparatus 1 is configured for batch processing and has a first housing 1A for housing each component of batch processing apparatus 1. Single-wafer processing apparatus 2 is configured for single-wafer processing of substrate W after batch processing and has a second housing 2A for housing each component of single-wafer processing apparatus 2. The first housing 1A has a first loading port 9, which protrudes from a wall surface constituting the first housing and is orthogonal to a first wall surface in the Y direction from batch processing block 7 to transfer block 5. The second housing 2A has a second loading port 10, which protrudes from a second wall surface constituting the second housing 2A and is orthogonal to a second wall surface in the Y direction. The second loading port 10 is located at the same position as the first loading port 9 in the Y direction. The second loading port 10 can hold a carrier C.

[0043] In this specification, for convenience, the direction in which the storage block 3, transfer block 5, and batch processing block 7 of the batch processing device 1 are arranged is referred to as the "front-back direction X". The front-back direction X is also the direction in which the transfer block 4 and the single-piece processing block 8 of the single-piece processing device 2 are arranged. This front-back direction X extends horizontally. The direction in the front-back direction X from the transfer block 5 of the batch processing device 1 to the storage block 3 is referred to as the "front". The front is also the direction from the single-piece processing block 8 of the single-piece processing device 2 to the transfer block 4. The direction opposite to the front is referred to as the "rear". The horizontally extending direction orthogonal to the front-back direction X is referred to as the "width direction Y". One direction of the "width direction Y" is conveniently referred to as the "right", and the other direction is conveniently referred to as the "left". The direction orthogonal to the front-back direction X and the width direction Y (height direction) is conveniently referred to as the "vertical direction Z". In each figure, for reference, front, rear, right, left, up, and down are appropriately shown.

[0044] The substrate processing system of the present invention first performs a first batch processing of substrate W in batch processing device 1, and then transfers the batch-processed substrate W to single-wafer processing device 2 via relay device 6. Afterwards, substrate W undergoes drying treatment via single-wafer processing device 2. Then, substrate W undergoes a second batch processing in batch processing device 1. The batch-processed substrate W is again transferred to single-wafer processing device 2 via relay device 6. Then, substrate W undergoes drying treatment via single-wafer processing device 2. Afterwards, substrate W is placed on carrier C placed on carrier shelf 14a. The carrier C containing substrate W is transferred to second loading port 10. Thus, the entire substrate processing process of the substrate processing system is completed. Hereinafter, the specific configuration of each device will be described in the order of batch processing device 1, relay device 6, and single-wafer processing device 2 of the substrate processing system of the present invention.

[0045] <2. Batch processing device: storage block> The storage block 3 has a first loading port 9, which is the entrance for inserting the carrier C into the block. The carrier C stores multiple substrates W horizontally at predetermined intervals along the vertical direction. The first loading port 9 is a structure that protrudes from the outer wall of the storage block 3, which extends along the width direction (Y direction).

[0046] Multiple substrates W (e.g., 25) are stacked horizontally at certain intervals and stored in a carrier C. The carrier C containing the unprocessed substrates W, which is transferred into the batch processing apparatus 1, is first placed on the first loading port 9. The carrier C has multiple horizontally extending slots (not shown) that accommodate the surfaces of the substrates W in a spaced-apart manner. One substrate W is inserted into each slot at a time. For example, a closed FOUP (Front Opening Unify Pod) can be used as the carrier C. In this invention, an open container can be used as the carrier C.

[0047] The internal structure of storage block 3 will be described below. Storage block 3 has a transport and storage section ACB for storing and managing racks C. The transport and storage section ACB has a rack transport mechanism 11 for transporting racks C and a shelf 13 for placing racks C. Storage block 3 can store one or more racks C.

[0048] The storage block 3 has a plurality of shelves 13 for holding the carrier C. The shelves 13 are provided on the partition wall that separates the storage block 3 from the transfer block 5. Among the shelves 13 are: a storage shelf 13b, which simply temporarily holds the carrier C; and a carrier shelf 13a for taking out the substrate, which is received by the first substrate transfer mechanism HTR of the transfer block 5.

[0049] The carrier shelf 13a corresponds to the first placement section. The carrier shelf 13a is configured to hold a carrier C, which stores multiple horizontally positioned substrates at predetermined vertical intervals. The carrier shelf 13a is configured to hold the carrier C for removing substrates W. In this embodiment, one carrier shelf 13a is provided, but multiple carrier shelves 13a can be provided. The carrier transport mechanism 11 picks up the carrier C containing the unprocessed substrate W from the first loading port 9 and places it on the carrier shelf 13a for substrate removal. At this time, the carrier transport mechanism 11 can also temporarily place the carrier C on a storage shelf 13b before placing it on the carrier shelf 13a. The storage block 3 has one or more carrier shelves 13a.

[0050] The carrier transport mechanism 11 is also movable inside the single-wafer processing device 2. A bridging section 17 is provided in the substrate processing unit to allow the carrier transport mechanism 11 to move left and right. The bridging section 17 is configured to bridge the batch processing device 1 and the single-wafer processing device 2. A passageway CP for the carrier C to move back and forth is provided inside the bridging section 17. A carrier block 12 capable of holding multiple carriers C is provided to the right of the passageway CP. The carrier block 12 belongs to the single-wafer processing device 2. The carrier block 12 has a carrier placement shelf 14a capable of holding the carrier C. The carrier placement shelf 14a corresponds to the second placement section of the present invention. The carrier placement shelf 14a is the destination for the substrate W processed by the single-wafer processing device 2. The substrate W that has completed the substrate drying process inside the single-wafer processing device 2 is moved into the empty carrier C provided in the carrier placement shelf 14a. Details regarding the carrier block 12 will be described in detail later.

[0051] The carrier conveying mechanism 11 can transport the carrier C from the carrier placement shelf 14a of the single-wafer processing device 2 to the carrier placement shelf 13a of the batch processing device 1. That is, in this embodiment, the substrate processing unit can take the dried substrate W from the single-wafer processing device 2 into the batch processing device 1. The dried substrate W in the carrier placement shelf 14a is the completed batch processing unit. The substrate W in the carrier placement shelf 14a is taken into the batch processing device 1 again by being transported to the carrier placement shelf 13a. After that, the substrate W undergoes batch processing again. Thus, the substrate processing unit in this embodiment is configured to perform batch processing of the substrate W in two stages.

[0052] <3. Batch Processing Unit: Transfer Block> The transfer block 5 is adjacent to the carrier shelf 13a. The transfer block 5 is disposed adjacent to the storage block 3. The transfer block 5 includes: a first substrate transport mechanism HTR, which can pick up the carrier C placed on the carrier shelf 13a for substrate removal; an HVC posture conversion unit 23, which converts a batch of multiple substrates W from a horizontal posture to a vertical posture; and a push rod mechanism 25. The HVC posture conversion unit 23 constitutes the first posture conversion mechanism 15. The first posture conversion mechanism 15 converts a batch of multiple substrates W taken from the carrier C from a horizontal posture to a vertical posture. Furthermore, a substrate transfer position PP is provided on the transfer block 5, which is used to transfer a batch of multiple substrates W to the second substrate transport mechanism WTR provided in the batch transport area R2. The first substrate transport mechanism HTR, the HVC posture conversion unit 23, and the push rod mechanism 25 are arranged sequentially along the Y direction.

[0053] The first substrate transport mechanism HTR corresponds to the substrate acquisition and transport mechanism of the present invention. The first substrate transport mechanism HTR is configured to retrieve a plurality of substrates W in batches from the carrier C placed on the carrier shelf 13a. The first substrate transport mechanism HTR is located to the right of the transport and storage section ACB of the storage block 3. The first substrate transport mechanism HTR is a mechanism for retrieving a plurality of substrates W in batches from the carrier C placed on the carrier shelf 13a for substrate retrieval and storage. The first substrate transport mechanism HTR has a plurality of (e.g., 25) hands 51 for transporting a plurality of substrates W in batches. Each hand 51 supports one substrate W. The first substrate transport mechanism HTR retrieves a plurality of (e.g., 25) substrates W in batches from the carrier C placed on the carrier shelf 13a of the storage block 3. Furthermore, the first substrate transport mechanism HTR can transport the held multiple substrates W to the support platform 23A of the HVC posture conversion unit 23. The HVC posture conversion unit 23 converts the received multiple substrates W from a horizontal posture to a vertical posture. The push rod mechanism 25 is configured to maintain the multiple substrates W in a vertical posture and make them move equally in the up, down, left, and right directions.

[0054] The HVC posture conversion unit 23 corresponds to the first posture conversion mechanism of the present invention. The HVC posture conversion unit 23 is configured to convert the substrate W, taken from the carrier C by the first substrate transport mechanism HTR, from a horizontal posture to a vertical posture. Figure 3 illustrates the HVC posture conversion unit 23 of Embodiment 1. The HVC posture conversion unit 23 includes a pair of horizontal holding portions 23B and a pair of vertical holding portions 23C extending in the longitudinal direction (Z direction). The support platform 23A has a support surface extending along the XY plane that supports the horizontal holding portions 23B and the vertical holding portions 23C. The rotation drive mechanism 23D is configured to rotate the horizontal holding portions 23B and the vertical holding portions 23C by 90° relative to each support platform 23A. Through this rotation, the horizontal holding portions 23B and the vertical holding portions 23C are configured to extend in the left-right direction (Y direction). Furthermore, Figure 4 is a schematic diagram illustrating the operation of the HVC posture conversion unit 23. Hereinafter, the configuration of each part will be described with reference to Figures 3 and 4.

[0055] The horizontal holding portion 23B supports a plurality of substrates W in a horizontal position from below. That is, the horizontal holding portion 23B has a comb-shaped structure with a plurality of protrusions corresponding to the substrates W to be supported. Between adjacent protrusions are elongated recesses for the peripheral portion of the substrates W. When the recess is inserted into the peripheral portion of the substrate W, the lower surface of the horizontally positioned substrate W contacts the upper surface of the protrusion, and the substrate W is supported in a horizontal position.

[0056] The vertical holding portion 23C supports a plurality of substrates W in a vertical position from below. That is, the vertical holding portion 23C has a comb-shaped structure with a plurality of protrusions corresponding to the substrates W to be supported. Between adjacent protrusions are elongated V-grooves for the peripheral portion of the substrate W. When the V-groove is inserted into the peripheral portion of the substrate W, the substrate W is held by the V-groove and supported in a vertical position. Since two vertical holding portions 23C are provided on the support platform 23A, the substrate W is held by two different V-grooves at two different locations on its peripheral portion.

[0057] A pair of horizontal holding portions 23B and a pair of vertical holding portions 23C extending along the longitudinal direction (Z direction) are arranged along an imaginary circle corresponding to the horizontal orientation of the substrate W, surrounding the substrate W to which it is held. The pair of horizontal holding portions 23B are spaced apart from the diameter of the substrate W, holding one end of the substrate W and the other end corresponding to the position furthest from that end. Thus, the pair of horizontal holding portions 23B supports the horizontally oriented substrate W. On the other hand, the pair of vertical holding portions 23C are spaced apart by a distance shorter than the diameter of the substrate W, supporting a designated portion of the substrate W and a specific portion located near that designated portion. Thus, the pair of vertical holding portions 23C supports the vertically oriented substrate W. The pair of horizontal holding portions 23B are located at the same position in the left-right direction (Y direction), and the pair of vertical holding portions 23C are located at the same position in the left-right direction (Y direction). The pair of vertical holding portions 23C are positioned on the side that tilts (to the left) relative to the support platform 23A, compared to the pair of horizontal holding portions 23B.

[0058] The rotary drive mechanism 23D supports the support platform 23A by rotating it at least 90° around the horizontal axis AX2 extending in the front-back direction (X direction). If the support platform 23A in the horizontal state rotates 90°, the support platform 23A becomes vertical, and the posture of the plurality of substrates W held in the horizontal holding part 23B and the vertical holding part 23C changes from a horizontal posture to a vertical posture.

[0059] As shown in Figure 4(f), the push rod mechanism 25 includes: a push rod 25A capable of mounting a vertically oriented substrate W; a lifting and rotating part 25B for rotating and raising / lowering the push rod 25A; a horizontal moving part 25C for moving the lifting and rotating part 25B in the left-right direction (Y direction); and a track 25D extending in the left-right direction (Y direction) to guide the horizontal moving part 25C. The push rod 25A is configured to support the lower part of each of a plurality of (e.g., 50) vertically oriented substrates W. The lifting and rotating part 25B is configured to be located below the push rod 25A and has a retractable mechanism for raising and lowering the push rod 25A in the up-down direction. The lifting and rotating part 25B is also capable of rotating the push rod 25A at least 180° around a vertical axis. The horizontal moving part 25C is configured to support the lifting and rotating part 25B and allows the push rod 25A and the lifting and rotating part 25B to move horizontally. The horizontal moving part 25C is guided by the track 25D, which allows the push rod 25A to move from the lifted position near the HVC posture conversion part 23 to the substrate junction position PP. Furthermore, the horizontal moving part 25C can also cause the push rod 25A to shift the vertically positioned substrate W in the arrangement direction of the substrate W by a distance corresponding to half the pitch of the substrate arrangement.

[0060] Here, the operation of the HVC posture conversion unit 23 and the push rod mechanism 25 will be explained. The HVC posture conversion unit 23 and the push rod mechanism 25 arrange, for example, a total of 50 substrates W housed in two carriers C, face-to-face with a predetermined interval (e.g., 5 mm). The 25 substrates W in the first carrier C are described as the first substrate W1 belonging to the first substrate group. Similarly, the 25 substrates W in the second carrier C are described as the second substrate W2 belonging to the second substrate group. Furthermore, in Figures 4(a) to 4(f), for ease of drawing, the number of first substrate W1 is 3 and the number of second substrate W2 is 3.

[0061] Figure 4(a) shows the state in which the first substrate W1, in a horizontal position, is delivered in batches to the HVC posture conversion unit 23 by the first substrate transport mechanism HTR. At this time, the device side (circuit pattern forming side) of the first substrate W1 is facing upward. The 25 first substrates W1 are arranged at a specified interval (e.g., 10 mm). This 10 mm interval is called the full pitch (standard pitch). The first substrates W1 in this state are held by the horizontal holding unit 23B. In addition, the push rod 25A is in a raised position below the support platform 23A at this time.

[0062] Figure 4(b) shows the state when the support platform 23A of the HVC posture conversion unit 23 is rotated 90° by the rotation drive mechanism 23D. In this way, the posture of the 25 first substrates W1 in the HVC posture conversion unit 23 is changed from a horizontal posture to a vertical posture. The first substrates W1 in this state are held by the vertical holding part 23C.

[0063] The push rod mechanism 25 supports the first posture conversion mechanism 15 in converting the posture of the first substrate W1 housed in the first carrier C into a vertical posture. Figure 4(c) shows the state where the push rod 25A is raised from the lifted position and moved to a position set directly above the lifted position. This upward movement is performed by the lifting and rotating part 25B. Thus, when the push rod 25A moves from the lower side to the upper side of the first substrate W1, the first substrate W1, supported by the vertical holding part 23C of the HVC posture conversion part 23, is pulled out from the vertical holding part 23C and moved onto the push rod 25A. A groove for clamping the substrate W is provided on the upper surface of the push rod 25A. The first substrate W1 is supported by these equally spaced grooves. Since the slots are arranged in half-pitch, and the first substrate W1 in the HVC posture conversion unit 23 is arranged in full pitch, the slots clamped by the first substrate W1 and the empty slots that do not support the substrate W are alternately arranged on the upper surface of the push rod 25A located directly above.

[0064] Figure 4(d) shows the action of rotating push rod 25A 180° via lifting and rotating part 25B, and the action of reversing the support platform 23A of HVC posture conversion part 23 by 90° via rotation drive mechanism 23D. In this state, HVC posture conversion part 23 can support the second substrate W2. If push rod 25A rotates 180°, the substrate W supported by the right end of push rod 25A moves to the left end of push rod 25A, and the empty slot at the left end of push rod 25A moves to the right end of push rod 25A. Since the positional relationship between HVC posture conversion part 23 and push rod 25A is set to transfer the substrate W located at the right end of HVC posture conversion part 23 to the right end of push rod 25A, HVC posture conversion part 23 can deliver the second substrate W2 at the right end to the slot at the right end of push rod 25A regardless of whether the first substrate W1 supported by push rod 25A is present. This situation also applies to the second substrate W2 supported by the HVC posture conversion unit 23. That is, the second substrates W2, which are arranged at intervals of the full pitch in the HVC posture conversion unit 23, can be arranged sequentially at intervals of the full pitch from the right end of the push rod 25A. This is because in the rotated push rod 25A, the empty slots are arranged at intervals of the full pitch starting from the right end. At this time, the first substrate W1 on the push rod 25A is housed in the gap between the second substrates W2 arranged on the push rod 25A. Figure 4(d) shows the state in which the second substrate W2 has been transported to the HVC posture conversion unit 23. In addition, in Figure 4(d), the second substrate W2 is supported by the horizontal holding part 23B.

[0065] If the push rod 25A, which is in the position directly above in the state shown in Figure 4(d), returns to its original raised position, the HVC posture conversion unit 23 can make the support platform 23A rotate 90° again.

[0066] Figure 4(e) shows the state when the support platform 23A is actually rotated again. At this time, since the push rod 25A only rotates 180°, when the push rod 25A is moved to the top position again as shown in Figure 4(f), the second substrate W2 will be received in the empty slot between the first substrates W1 sandwiched on the upper surface of the push rod 25A without interfering with the first substrate W1. In this way, a batch is formed by alternating arrangement of the first substrates W1 and the second substrates W2. In addition, in Figure 4(e), the second substrate W2 is supported by the vertical holding part 23C. Since the batch is formed by arranging the substrates W in a face-to-face manner, the device surfaces of the first substrates W1 constituting the batch all face the right side of Figure 4(f), and the device surfaces of the second substrates W2 all face the left side of Figure 4(f). Thus, the push rod mechanism 25 also supports the group of substrates in a vertical posture, which is obtained by the first posture conversion mechanism 15 from the posture conversion of the second substrate W2 stored in the second carrier C.

[0067] Figure 4(f) shows the state when push rod 25A moves to the top position again. Moreover, the batch produced in push rod 25A is transported to the left (Y direction) by horizontal moving part 25C and moved to the substrate junction position PP.

[0068] Thus, the push rod mechanism 25 will house the two substrate groups in the carrier C at full pitch, forming a batch of substrates W arranged at half pitch. The device surfaces of the first substrate W1 and the second substrate W2 constituting the batch face each other, and the substrates are arranged face-to-face.

[0069] The drying batch support unit 33 is mainly provided for the purpose of temporarily suspending the batch after it has been grouped by the HVC posture conversion unit 23 and the push rod mechanism 25. It is located between the substrate transfer position PP and the relay device 6 described later. When the batch is transferred from the drying batch support unit 33 to the batch substrate processing block 7, the second substrate transfer mechanism WTR of the batch processing device 1 is used.

[0070] <5. Batch Processing Device: Batch Processing Block> Batch processing block 7 is adjacent to transfer block 5. Batch processing block 7 performs batch processing on the aforementioned batches. Batch processing block 7 is divided into a batch processing area R1 arranged along the width direction (Y direction) and a batch transfer area R2. Each area extends along the front-back direction (X direction). Specifically, batch processing area R1 is located inside batch processing block 7. Batch transfer area R2 is adjacent to batch processing area R1 and is located at the leftmost position of batch processing block 7.

[0071] <5.1. Batch Processing Area> The batch processing area R1 of batch processing block 7 is a rectangular area extending in the front-to-back direction (X direction). One end of batch processing area R1 (front side) is adjacent to relay device 6. The other end of batch processing area R1 extends away from transfer block 5 and relay device 6 (rearward side). Therefore, relay device 6 is a device inserted at the position where batch processing device 1 is interrupted. When transferring batches from batch processing device 1 to relay device 6, the second substrate transfer mechanism WTR of batch processing device 1 is used.

[0072] The second substrate transfer mechanism WTR transfers multiple substrates W in a vertical orientation between the transfer block 5, batch processing units BPU1~BPU6, and the transfer position IP of the relay device 6. Therefore, the movable area of ​​the second substrate transfer mechanism WTR, namely the batch transfer area R2, extends along the Y direction along the left end of the relay device 6 and is not interrupted by the relay device 6. The relay device 6 is embedded inside the batch processing device 1 but does not reach the left end of the batch processing device 1. This is because the batch transfer area R2 is provided at the left end of the batch processing device 1.

[0073] The batch processing area R1 mainly comprises a batch processing unit for performing batch processing. Specifically, the batch processing area R1 includes: a batch drying chamber DC, which dries a batch of multiple substrates W; and multiple batch processing units BPU1 to BPU6, which impregnate a batch of multiple substrates W in the direction extending from the batch processing area R1. Batch processing units BPU1 to BPU6 impregnate a batch of vertically oriented multiple substrates. The configuration of the batch drying chamber DC and the batch processing units BPU1 to BPU6 will be described in detail. The batch drying chamber DC is adjacent to the relay device 6 from the rear. The first batch processing unit BPU1 is adjacent to the batch drying chamber DC from the rear. The second batch processing unit BPU2 is adjacent to the first batch processing unit BPU1 from the rear. The third batch processing unit BPU3 is adjacent to the second batch processing unit BPU2 from the rear. The fourth batch processing unit BPU4 is adjacent to the third batch processing unit BPU3 from the rear. The fifth batch processing unit BPU5 is adjacent to the fourth batch processing unit BPU4. The sixth batch processing unit BPU6 is adjacent to the fifth batch processing unit BPU5. Therefore, the batch drying chamber DC, the first batch processing unit BPU1, the second batch processing unit BPU2, the third batch processing unit BPU3, the fourth batch processing unit BPU4, the fifth batch processing unit BPU5, and the sixth batch processing unit BPU6 are arranged sequentially away from the relay device 6. In Figure 1, for ease of drawing, the second batch processing units BPU2 to the fifth batch processing units BPU5 are omitted. This configuration can be understood by referring to Figure 2.

[0074] Batch processing units BPU1 to BPU6 are equipped with the batch processing tanks of this invention. The batch processing tanks are tanks that hold either a pharmaceutical solution or pure water. The pharmaceutical solution can be an acidic aqueous solution, such as a phosphoric acid aqueous solution. In this specification, the pharmaceutical solution and pure water are collectively referred to as the liquid solution. The batch processing tanks holding the pharmaceutical solution are referred to as batch pharmaceutical solution processing tanks CHB2 to CHB6, and the batch processing tanks holding pure water are referred to as batch rinsing processing tanks ONB.

[0075] Specifically, the second batch processing unit BPU2 includes a batch chemical treatment tank CHB2 for treating the entire batch with chemicals, and a lifting mechanism LF2 (see Figure 2) for moving the batch between a substrate transfer position and a chemical treatment position. The substrate transfer position is located above the batch chemical treatment tank CHB2, which can be picked up by the second substrate transport mechanism WTR. The chemical treatment position is located inside the batch chemical treatment tank CHB2, where the batch is immersed in chemicals. The batch chemical treatment tank CHB2 performs acid treatment on the batch. The acid treatment can be phosphoric acid treatment, but other acids can be used. The phosphoric acid treatment etches the multiple substrates W constituting the batch. The etching treatment, for example, chemically etches the nitride film on the surface of the substrate W.

[0076] The batch processing tank CHB2 contains acidic solutions such as phosphoric acid solution. A lift LF2 is attached to the batch processing tank CHB2 to move the batch vertically. The lift LF2 moves vertically (Z-direction). Specifically, the lift LF2 moves between the processing position inside the batch processing tank CHB2 and the junction position above the batch processing tank CHB2. The lift LF2 holds the batch of substrates W in a vertical position. At the junction position, the lift LF2 transfers the batch between itself and the second substrate transport mechanism WTR. When the lift LF2 descends from the junction position to the processing position while holding the batch, the entire surface of the substrates W is below the liquid level of the solution. When the lift LF2 rises from the processing position to the junction position while holding the batch, the entire surface of the substrates W is above the liquid level of the solution. The lift LF2 allows multiple substrates in a vertical position, whose positions are changed by the HVC position conversion unit 23, to be immersed in the batch processing tank. At this point, the elevator LF2 descends from the handover position to the processing position.

[0077] The batch drug treatment tank CHB2 supplies drug solution from bottom to top, causing convection. In the first and second batch treatments of this embodiment, drug solution is sprayed from the bottom of the batch drug treatment tank CHB2, stirring the held drug solution up and down. The sprayed fluid can be an inert gas, which can stir the drug solution up and down by bubbling. Figure 5(a) illustrates the batch drug treatment tank CHB2 of the present invention. As shown in Figure 5(a), the batch drug treatment tank CHB2 has a spray outlet 27 at the bottom for spraying fluid. When drug solution or the like is sprayed from the spray outlet 27, the drug solution retained at the bottom moves towards the water surface of the batch drug treatment tank CHB2, stirring the drug solution in the tank. Furthermore, the batch chemical treatment tanks CHB3, CHB4, CHB5, and CHB6 of the third batch processing unit BPU3, fourth batch processing unit BPU4, fifth batch processing unit BPU5, and sixth batch processing unit BPU6 are also configured to agitate the maintained chemical solution by spraying the solution from the bottom. The batch rinsing treatment tank ONB in ​​the first batch processing unit BPU1 maintains pure water. Therefore, the batch rinsing treatment tank ONB is configured to agitate the maintained pure water by spraying pure water from the bottom.

[0078] The third batch processing unit BPU3 specifically includes a batch chemical treatment tank CHB3 and a lifting mechanism LF3 that moves the batch between the substrate junction position and the chemical treatment position. The batch chemical treatment tank CHB3 has the same configuration as the batch chemical treatment tank CHB2 described above. That is, the batch chemical treatment tank CHB3 contains the aforementioned chemical solution and is equipped with the lifting mechanism LF3. The batch chemical treatment tank CHB3 performs the same processing on the batch as the batch chemical treatment tank CHB2. The batch processing apparatus 1 in this example has multiple treatment tanks capable of performing the same chemical treatment. This is because phosphoric acid treatment requires a longer time than other treatments. Phosphoric acid treatment requires a long time (e.g., 60 minutes). Therefore, the apparatus in this example performs acid treatment in parallel using multiple batch chemical treatment tanks.

[0079] Batch processing units BPU4 through BPU6 have the same configuration as batch processing units BPU2 and BPU3. Specifically, batch processing unit BPU4 includes a batch chemical treatment tank CHB4 and a lifting mechanism LF4 that moves the batch between the substrate junction position and the chemical treatment position. Similarly, batch processing unit BPU5 includes a batch chemical treatment tank CHB5 and a lifting mechanism LF5 that moves the batch between the substrate junction position and the chemical treatment position. Furthermore, batch processing unit BPU6 includes a batch chemical treatment tank CHB6 and a lifting mechanism LF6 that moves the batch between the substrate junction position and the chemical treatment position. Therefore, the batch is acid-treated in any of the batch chemical treatment tanks CHB2 through CHB6. By performing chemical treatment in parallel with these five processing units, the production capacity of the equipment is increased.

[0080] Specifically, the first batch processing unit BPU1 includes: a batch rinsing tank ONB containing rinsing fluid, and a lift LF1 that moves the batch between a substrate transfer position and a rinsing position. The substrate transfer position is located above the batch rinsing tank ONB, which can be picked up by the second substrate transport mechanism WTR. The rinsing position is located within the tank of the batch rinsing tank ONB, where the batch is immersed in the rinsing fluid. The batch rinsing tank ONB has the same configuration as the batch chemical treatment tank CHB2 described above. That is, the batch rinsing tank ONB contains rinsing fluid and is equipped with the lift LF1. Unlike other processing tanks, the batch rinsing tank ONB contains pure water, which is provided for the purpose of washing away the chemical adhering to multiple substrates W. In the batch rinsing tank ONB, if the resistivity of the pure water in the tank rises to a predetermined value, the washing process ends.

[0081] Thus, in this embodiment, the batch rinsing tank ONB is located closer to the relay device 6 than the batch chemical treatment tanks CHB2 to CHB6. This configuration allows the various mechanisms constituting the relay device 6 to be as far apart as possible from the batch chemical treatment tanks CHB2 to CHB6, preventing the relay device 6 from being adversely affected by acids such as phosphoric acid. Furthermore, by arranging the relay device 6 close to the batch rinsing tank ONB, the batches that have completed rinsing are transported a shorter distance and immediately transferred to the relay device 6. Therefore, according to the configuration of this embodiment, the transfer of the substrate W can be completed quickly while maintaining its wetted state.

[0082] <5.2. Bulk transfer area> The batch transfer area R2 of batch processing block 7 is a rectangular area extending in the front-to-back direction (X direction). The batch transfer area R2 is set along the outer edge of batch processing area R1, extending to transfer block 5 at one end and extending away from transfer block 5 at the other end. Therefore, the batch transfer area R2 is also configured along the position of relay device 6 located between transfer block 5 and batch processing block 7.

[0083] A second substrate transport mechanism WTR is provided in the batch transport area R2 for transporting multiple substrates W in batches. The second substrate transport mechanism WTR transports multiple substrates W (specifically, in batches) in batches between the substrate transfer position PP within the transfer block 5, the drying batch support unit 33, the batch drying chamber DC, each batch processing unit BPU1~BPU6, and the transport position IP of the relay device 6 (described later). The second substrate transport mechanism WTR is configured to reciprocate along the front-back direction (X direction) throughout the transfer block 5, the relay device 6, and the batch processing block 7. In addition to moving to the batch transport area R2 of the batch processing block 7, the second substrate transport mechanism WTR can also move to the substrate transfer position PP within the transfer block 5, the drying batch support unit 33, and the transport position IP within the relay device 6.

[0084] The second substrate transport mechanism WTR includes a pair of clamps 29 for transporting batches. The pair of clamps 29 can be configured to be either closed (approaching each other) or open (away from each other). Each clamp 29 is a member extending along the Y-direction, consisting of slots arranged at half-pitch intervals for holding substrates W. When the pair of clamps 29 is closed, it receives a plurality of substrates W constituting the batch. Then, when the pair of clamps 29 is open, it transfers the plurality of substrates W constituting the batch to another member (such as a lift LF1). The second substrate transport mechanism WTR transfers batches between the substrate transfer position PP of the transfer block 5, the drying batch support 33, and the lift LF65 belonging to the batch standby slot 65 located at the transfer position IP of the relay device 6. Furthermore, the second substrate transport mechanism WTR transfers batches between the lifts LF1 to LF6 of the batch processing units BPU1 to BPU6 belonging to the batch processing block 7 and the batch drying chamber DC.

[0085] Within the batch transfer area R2, a guide rail 31X extending in the X direction guides the second substrate transfer mechanism WTR. The second substrate transfer mechanism WTR can move forward and backward along the guide rail 31X in the X direction. Therefore, the guide rail 31X extends from the batch processing block 7 to the transfer block 5 via the relay device 6. More specifically, the guide rail 31X faces the substrate transfer position PP of the transfer block 5 in the Y direction, and faces the sixth batch processing unit BUP6 of the batch processing block 7 in the Y direction. In addition, the guide rail 31X faces the drying batch support 33 of the transfer block 5, the batch standby slot 65 of the relay device 6, the batch drying chamber DC of the batch processing block 7, and the first batch processing units BPU1 to the sixth batch processing units BPU6 in the Y direction of the batch processing block 7.

[0086] <5.3. Other Components> The batch drying chamber DC is positioned between the first batch processing unit BPU1 and the relay device 6. The batch drying chamber DC has a drying chamber for accommodating a batch of substrates W arranged in a vertical orientation. The drying chamber includes: an inert gas supply nozzle for supplying inert gas into the chamber, and a vapor supply nozzle for supplying vapor of organic solvent into the chamber. The batch drying chamber DC first supplies inert gas to the batch supported within the chamber, replacing the atmosphere within the chamber with inert gas. Then, depressurization begins within the chamber. Under depressurized conditions, vapor of organic solvent is supplied into the chamber. The organic solvent, along with moisture adhering to the substrates W, is discharged outside the chamber. Thus, the batch drying chamber DC performs batch drying. The inert gas used can be, for example, nitrogen, and the organic solvent can be, for example, IPA (isopropanol).

[0087] The batch processing apparatus 1 comprises a carrier shelf 13a, a batch drying chamber DC, and batch processing units BPU1 to BPU6 arranged in a front-to-back direction. That is, the carrier shelf 13a is positioned at the front, and the batch drying chamber DC is positioned behind it. The batch processing units BPU1 to BPU6 are further positioned behind it. In this embodiment, the batch processing apparatus 1 optimizes the internal configuration by minimizing the travel distance of the second substrate transport mechanism WTR.

[0088] <6. Relay Device> The relay device 6 is a structure that bridges the batch processing device 1 and the single-chip processing device 2. Its left end is embedded inside the batch processing device 1, and its right end is embedded inside the single-chip processing device 2. The relay device 6 has a transport path extending along the Y direction connecting the batch transport area R2 of the batch processing device 1 to the single-chip transport area R3 of the single-chip processing device 2. This transport path is configured to transport the substrate W horizontally along the Y direction without changing the Z-direction position of the substrate W. Therefore, the insertion position of the relay device 6 in the batch processing device 1 and the insertion position of the relay device 6 in the single-chip processing device 2 are the same in the Z-direction.

[0089] The relay device 6 is configured to transport the batch-processed substrate W from the batch processing device 1 to the single-wafer processing device. The relay device 6 is located in the middle layer between the batch processing device 1 and the single-wafer processing device 2 (see Figure 17). Therefore, the relay device 6 bridges the batch processing device 1 and the single-wafer processing device 2 at a position halfway up the ground from which they are located. The specific location of the relay device 6 is related to the structure of the single-wafer processing device 2, and will be described in detail in conjunction with the description of the single-wafer processing device 2.

[0090] The relay device 6 includes a relay housing 6A, which connects the first housing 1A of the batch processing device 1 and the second housing 2A of the single-chip processing device 2, which are separated from each other in the Y direction. The relay housing 6A is disposed between a third wall surface 1B, which is opposite to the second housing 2A, in the wall surface constituting the first housing 1A, and a fourth wall surface 2B, which is opposite to the third wall surface 1B, in the wall surface constituting the second housing 2A.

[0091] The relay housing 6A has a side wall 62a, a bottom plate 62b, and a top plate 62c connecting the batch processing device 1 and the single-chip processing device 2. For details regarding the configuration of the side wall 62a, bottom plate 62b, and top plate 62c, please refer to Figures 2 and 17. The relay housing 6A, connecting the housings of the batch processing device 1 and the single-chip processing device 2, constitutes a substrate processing system. Thus, the substrate processing system is configured to isolate the external atmosphere from the atmosphere inside the device.

[0092] The relay device 6 includes: a batch standby tank 65, which allows batches of processed products to stand by in pure water; an underwater posture conversion unit 55, which receives a plurality of substrates W arranged along the Y direction and converts the posture of the plurality of substrates W from a vertical posture to a horizontal posture by rotating the entire batch of received substrates W in water by 90°; a relay transport mechanism OTR, which transports one horizontally positioned substrate W at a time to the transport exit position OP; and a transport exit path 26, which maintains the horizontally positioned substrates W. The batch standby tank 65, the underwater posture conversion unit 55, the relay transport mechanism OTR, and the transport exit path 26 are arranged sequentially from the left side of the batch processing device 1 towards the right. An input position IP is provided in the batch standby tank 65 for receiving batches from the batch processing device 1. Therefore, in the relay device 6, the input position IP and the transport exit position OP are arranged in a left-right direction orthogonal to the front-back direction. The specific details of each part will be described below.

[0093] <6.1. Relay device: Batch standby slot> The batch standby tank 65 immerses the batch of processed substrates in pure water. The batch standby tank 65 has the same configuration as the first batch processing unit BPU1 of the batch processing device 1. That is, the batch standby tank 65 holds pure water and has a lift LF65 for lifting the batch. The lift LF65 can move back and forth between the loading position IP for loading the batch to the relay device 6 and the immersion position for immersing the loaded batch in pure water. The loading position IP is determined for receiving the batch-processed substrates from the batch processing device 1. The loading position IP is located above the immersion position and can be transported by the second substrate transport mechanism WTR. The loading position IP is set such that the entire area of ​​the substrate W constituting the batch is in mid-air, and the immersion position is set such that the entire area of ​​the substrate W constituting the batch is immersed in pure water.

[0094] <6.2. Relay Device: Full-Pitch Arrangement Baseboard Transport Mechanism> The semi-batch transport mechanism STR sorts the batch immersed in the batch standby tank 65 into first substrate W1 and second substrate W2. The semi-batch transport mechanism STR can transport 25 substrates arranged in full pitch between the batch standby tank 65 and the underwater posture conversion unit 55. 50 substrates W arranged in half pitch are in standby in the batch standby tank 65, and the semi-batch transport mechanism STR picks up half of these 25 substrates and transports them to the underwater posture conversion unit 55. The semi-batch transport mechanism STR has a pair of clamps 30, identical to the pair of clamps 29 in the second substrate transport mechanism WTR. Like clamps 29, clamps 30 have grooves formed at half-pitch intervals, but the alternation of the two types of grooves differs from that in clamps 29. That is, in clamps 30, deep grooves that cannot hold substrates and shallow grooves that hold substrates are arranged alternately at half-pitch intervals. Therefore, if the intention is to hold the batch located in the elevator LF65 using the half-batch conveyor STR, 25 substrates W are picked up by the shallow slots that can hold the substrates W, while the remaining 25 substrates cannot be held in the deep slots and remain in the elevator LF65. The shallow slots of the clamp 30 are arranged with a pitch twice the half pitch (full pitch), and the half-batch conveyor STR picks up the 25 substrates W arranged with full pitch from the batch in the elevator LF65. Since the batch is formed by arranging the substrates W face-to-face, the picked-up substrates W are arranged with the front (device side) on the right and the back side on the left to prevent adjacent substrates W from facing each other. On the other hand, the 25 substrates W that are not picked up and remain in the elevator LF65 are arranged with the front (device side) on the left and the back side on the right to prevent adjacent substrates W from facing each other.

[0095] The pair of clamps 30 in the semi-batch transport mechanism STR, like the clamps 29 in the second substrate transport mechanism WTR, can be in two states: a closed state where the clamps 30 are close to each other in the X direction, and an open state where the clamps 30 are away from each other in the X direction. When the pair of clamps 30 is in the closed state, the clamps 30 are sufficiently close to each other relative to the diameter of the substrate W, so that the two lower parts of the substrate W abut against each of the clamps 30. In this way, the substrate W is held by the pair of clamps 30. When the pair of clamps 30 that will be in the closed state is in the open state, the clamps 30 are sufficiently far apart relative to the diameter of the substrate W, so that the substrate W is detached from the clamps 30. Specifically, the pair of clamps 30 is in the open state before the lifting mechanism LF65 in the transport position IP receives multiple substrates W, and after the multiple substrates W are handed over to the push rod 55A in the position above the impregnation tank (described later).

[0096] The relay device 6 includes a guide rail 31Y extending in the Y direction to guide the semi-batch transport mechanism STR. The semi-batch transport mechanism STR can move forward and backward along the guide rail 31Y in the Y direction. Therefore, the guide rail 31Y extends from the batch standby tank 65 to the underwater attitude conversion unit 55.

[0097] The semi-batch transport mechanism STR, guided by guide rail 31Y, moves forward and backward along the Y direction from the batch transfer position IP of the elevator LF65 to the position above the immersion tank where the push rod 55A of the underwater posture conversion unit 55 (described later) receives multiple substrates W. In this way, the semi-batch transport mechanism STR can transport multiple substrates W along the Y direction from the transfer position IP to the position above the immersion tank. Furthermore, when the second substrate transport mechanism WTR moves from the transfer block 5 to the batch processing block 7, the semi-batch transport mechanism STR can move to the position above the immersion tank without interfering with the second substrate transport mechanism WTR (see Figure 2).

[0098] <6.3. Relay Device: Underwater Conversion Unit> The underwater posture conversion unit 55 corresponds to the second posture conversion mechanism of the present invention. The underwater posture conversion unit 55 converts a plurality of substrates W received from the batch processing device 1 from a vertical posture to a horizontal posture. The underwater posture conversion unit 55 converts the sorted first substrate W1 and second substrate W2 from a vertical posture to a horizontal posture in a batch. The underwater posture conversion unit 55 includes: an immersion tank 73 holding pure water; a reversing clamp 71 located above the immersion tank 73; and a pair of reversing clamp support mechanisms 72 for holding each of the reversing clamps 71 and for raising, lowering, and rotating the reversing clamps 71. The reversing clamp 71 can move up and down from a substrate junction position set on the surface of the liquid in the immersion tank 73 to the liquid in the immersion tank 73. The reversing clamp 71 allows a plurality of substrates W received from the half-batch transport mechanism STR to be immersed in the immersion tank 73, and in this state rotated 90° in one direction or in the opposite direction. The orientation of the plurality of substrates W, which are in a vertical orientation, is converted to a horizontal orientation by rotating a pair of reversing clamps 71.

[0099] The reversing clamp 71 can change between a closed state, in which multiple substrates W are held in place by the action of a pair of reversing clamp support mechanisms 72, and an open state, in which the held multiple substrates W are released. Furthermore, the reversing clamp 71 can rotate 90° in the opposite direction while maintaining its positional relationship with each other by the action of the pair of reversing clamp support mechanisms 72. Moreover, the reversing clamp 71 can move up and down from above the immersion tank 73 to the liquid in the immersion tank 73 while maintaining its positional relationship with each other by the action of the pair of reversing clamp support mechanisms 72.

[0100] The reversing clamp 71 is a comb-shaped fixture with multiple V-grooves 71a spaced at full pitch. A pair of reversing clamps 71 hold multiple substrates W from both sides by inserting them into the V-grooves. When the reversing clamp 71 is in the closed state, the ends of each substrate abut against the deepest part of the V-groove, and even if the reversing clamp 71 is rotated in this state, the substrate W will not slip off. When the reversing clamp 71 is in the open state, the substrates W can be received by the semi-batch transport mechanism STR, which holds multiple substrates W above the impregnation tank 73 and is ready for operation. Furthermore, the reversing clamp 71 can also be in a state between the closed and open states (a semi-open state), but this state will be described later.

[0101] <6.4. Relay Device: Relay Conveying Mechanism> The relay transport mechanism OTR is a mechanism located between the loading position IP and the unloading position OP, capable of transporting one horizontally positioned substrate W at a time to the single-piece processing device 2, after the posture conversion unit 55 has performed the posture conversion. As shown in Figure 1, the relay transport mechanism OTR is guided by a relay track 32Y extending from the underwater posture conversion unit 55 along the Y direction to the unloading position OP (described later), and can move along the Y direction. The relay transport mechanism OTR has a second hand 103b. The relay transport mechanism OTR can use the second hand 103b facing the underwater posture conversion unit 55 to receive one horizontally positioned substrate W at a time with a self-reversing clamp 71. Furthermore, the relay transport mechanism OTR can transport the substrate to the unloading position OP, which is provided with the unloading path 26.

[0102] As shown in Figure 5(b), the relay conveying mechanism OTR includes a first hand 103a for acquiring a dried substrate W and a second hand 103b for acquiring a substrate W before drying. The first hand 103a can support a substrate W in a horizontal position. Similarly, the second hand 103b can support a substrate W in a horizontal position. The first hand 103a and the second hand 103b are arranged vertically and connected to a common base 103c. The first hand 103a and the second hand 103b can move independently relative to the base 103c in a horizontal direction. If the first hand 103a moves forward relative to the second hand 103b, the second hand 103b will not become an obstacle when the substrate acquired by the first hand 103a is acquired. Furthermore, if the second hand portion 103b is moved forward relative to the first hand portion 103a, the first hand portion 103a will not become an obstacle when the substrate of the second hand portion 103b is obtained.

[0103] The first hand portion 103a is located above the second hand portion 103b. By configuring it in this way, moisture adhering to the second hand portion 103b is prevented from dripping onto the first hand portion 103a. That is, since the first hand portion 103a is always in a dry state, the substrate W obtained from the first hand portion 103a will not be wetted by the first hand portion 103a.

[0104] In this embodiment, the first hand 103a is not used in the relay transport of the substrate W. In this embodiment, the method of transporting the wetted substrate W using the second hand 103b will be described. The substrate transport using the first hand 103a will be described later.

[0105] <6.5. Relay Device: Operation of the Relay Conveying Mechanism> The relay device 6 will describe the manner in which it transports the substrate W located at the loading position IP to the unloading position OP. The unloading position OP is determined to be the position whereby the substrate W received at the loading position IP will be delivered to the single-chip processing device 2. Figure 6(a) shows the arrangement of the elevator LF65 holding multiple substrates W at the loading position IP, which is set above the batch standby slot 65. The transport of the substrates to the loading position IP is performed by the second substrate transport mechanism WTR. The multiple substrates W placed on the elevator LF65 are arranged face-to-face in an alternating manner with substrates W with the device side facing right and substrates W with the device side facing left.

[0106] At this time, if the elevator LF65 descends from the loading position IP to the immersion position, it can prevent the waiting time for the substrate W to be transported to dry during the period when one substrate W is transported at a time in the relay device 6.

[0107] Figure 6(a) shows the state in which the elevator LF65 delivers the multiple substrates W in batches to the half-batch transport mechanism STR in order to transport the multiple substrates W to the underwater posture conversion unit 55. At this time, the elevator LF65 supports the multiple substrates W at the loading position IP, and the half-batch transport mechanism STR moves a pair of clamps 30 to a position where the batch can be held, and sets the clamps 30 to a closed state. At this time, as described above, the clamps 30 can only hold half of the multiple substrates W that make up the batch and are arranged in half-pitch. As a result, the batch is in a state where substrates W held by the clamps 30 and substrates W not held by the clamps 30 are arranged alternately.

[0108] Figure 6(b) shows the state of the elevator LF65 after it descends from the loading position IP to the immersion position. When the elevator LF65 descends from the state shown in Figure 6(a), half of the substrates W constituting the batch, arranged in full pitch, remain in the half-batch transport mechanism STR, while the remaining half of the substrates W return to the batch waiting slot 65 in the elevator LF65 in a state of full pitch arrangement. The device faces of the substrates W remaining in the half-batch transport mechanism STR face right, while the device faces of the substrates W held by the elevator LF65 in the immersion position face left.

[0109] Figure 7(a) shows the state when the semi-batch transport mechanism STR transports multiple substrates W to the space above the impregnation tank 73. At this time, a pair of reversing clamps 71 are located above the semi-batch transport mechanism STR, with a rotation angle of 0° from the initial state. The reversing clamps 71 in the initial state can extend horizontally to receive the multiple substrates W in a vertical position.

[0110] Figure 7(b) shows the state in which the reverse clamp 71 descends to the half-batch transport mechanism STR. The operation of the reverse clamp 71 is achieved by the reverse clamp support mechanism 72. Figure 7(b) shows the state in which 25 substrates W are transferred from the clamp 30 of the half-batch transport mechanism STR to the reverse clamp 71. That is, a pair of reverse clamps 71 remain open and descend to the half-batch transport mechanism STR, and then are set to the closed state. Because one of the reverse clamps 71 is in the open state, it is separated to the extent that the substrates W can pass through, so it can approach the clamp 30 without contacting the substrates W. Then, the reverse clamp 71 is closed by the operation of the reverse clamp support mechanism 72, holding the 25 substrates W. At this time, the 25 substrates W are also held by either the clamp 30 or the reverse clamp 71. Then, the clamp 30 is opened and withdraws in the Y direction (left direction). Thus, the transfer of substrate W from clamp 30 to reversing clamp 71 is performed. Figure 7(c) shows the state in which 25 substrates W are transferred to reversing clamp 71. As shown by the arrow in Figure 7(c), reversing clamp 71 descends below the liquid surface of immersion tank 73, immersing the 25 substrates W in the pure water held in immersion tank 73.

[0111] Figure 8(a) shows the state in which the reverse clamp 71 gradually rotates 90° while the 25 substrates W are immersed in pure water. The operation of the reverse clamp 71 is realized by the reverse clamp support mechanism 72. Figure 8(b) shows the state in which the reverse clamp 71 completes the 90° rotation. Thus, the device surfaces of the 25 substrates W immersed in the immersion tank 73 and facing the Y direction (left direction) are rotated 90° to face upwards. If the substrates W are tilted in this way, the posture of the substrates W can be set to a horizontal posture with the device surfaces facing upwards. The horizontally positioned substrates W are then transported with the device surfaces facing upwards.

[0112] Figure 8(c) shows the state when the reverse clamp 71 moves one of the 25 substrates W to the surface of the liquid in the immersion tank 73. The operation of the reverse clamp 71 is achieved by the reverse clamp support mechanism 72. According to Figure 8(c), only one substrate W is on the liquid surface, while the remaining 24 substrates W are below the liquid surface in the immersion tank 73. With this configuration, the 24 substrates W will not dry during the transfer standby. The substrate W on the liquid surface is transferred to the take-out position OP by the relay transfer mechanism OTR while maintaining a horizontal posture. Subsequently, the reverse clamp support mechanism 72 raises a pair of reverse clamps 71 by an amount equivalent to the full pitch height whenever the relay transfer mechanism OTR transfers a substrate W. If this operation is repeated, all 25 substrates W are transferred to the take-out position OP by the relay transfer mechanism OTR.

[0113] The opening and closing operations of the reversing clamps 71 in each state shown in Figures 6(a) to 8(c) will be explained. As mentioned above, in one of the states shown in Figures 6(a) to 7(a), the reversing clamps 71 are in an open state, not a state where the substrate W can be held. Since the substrate W can pass through the open reversing clamps 71, the reversing clamps 71 can move to the position shown in Figure 7(b) without colliding with the substrate W. In Figure 7(b), the pair of reversing clamps 71 switch from the open state to the closed state. At this time, the V-grooves of each pair of reversing clamps 71 allow the ends of the 25 substrates W arranged in full pitch to enter and abut. Because the V-grooves are arranged in full pitch, the 25 substrates W arranged in full pitch easily fall into each V-groove. The manner in which the substrate W falls into each V-groove is explained in detail in Figure 13(a). In Figures 7(c) to 8(b), the pair of reversing clamps 71 are in a closed state, holding the substrate W. In this state, even if the reversing clamps 71 are rotated, the held substrate W will not fall.

[0114] To achieve the state shown in Figure 8(c), the following design is necessary: ​​allowing the relay conveyor OTR to transport the substrate W without causing the substrate W waiting in the impregnation tank 73 to fall. Therefore, according to this embodiment, in the state shown in Figure 8(c), the pair of reversing clamps 71 are set to a half-open state. This achieves a state where the substrate W is supported in a way that allows it to be removed. The half-open state is explained in detail in Figures 13(c) and 13(d).

[0115] Figure 9(a) shows the state in which the elevator LF65 holds a plurality of substrates W at the loading position IP set above the batch standby tank 65. The transport of the substrates to the loading position IP is performed by the second substrate transport mechanism WTR. The 25 substrates W placed in the elevator LF65 are arranged with the device face facing right at full pitch. These substrates W are the substrates W remaining in the batch standby tank 65 in Figure 6(b). Figure 9(a) explains the state when the 25 substrates W are transported later. In addition, Figure 9(a) shows the state when the horizontal substrate transport as described in Figure 8(c) is completed, and a pair of reversing clamps 71 return to the initial state shown in Figure 6(a). In the initial state, one of the reversing clamps 71 extends along the Y direction and can guide the substrate W in a vertical position, located above the impregnation tank 73.

[0116] Figure 9(b) corresponds to Figure 6(b) above, showing the state in which 25 substrates W are transferred to the clamp 30 of the semi-batch transfer mechanism STR. Figure 10(a) corresponds to Figure 7(a) above, showing the state in which the semi-batch transfer mechanism STR moves the 25 substrates W to a position clamped between the impregnation tank 73 and a pair of reversing clamps 71. Figure 10(b) corresponds to Figure 7(b) above, showing the state in which the 25 substrates W are transferred from the semi-batch transfer mechanism STR to a pair of reversing clamps 71. Figure 10(c) corresponds to Figure 7(c) above, showing the state in which the 25 substrates W supported by the pair of reversing clamps 71 are located above the impregnation tank 73.

[0117] Figure 11(a) shows the state in which the reverse clamp 71 gradually rotates -90° while the 25 substrates W are immersed in pure water. The operation of the reverse clamp 71 is realized by the reverse clamp support mechanism 72. Figure 11(b) shows the state in which the reverse clamp 71 completes the -90° rotation. Thus, the device surfaces of the 25 substrates W immersed in the immersion tank 73 and facing the Y direction (right direction) are rotated 90° to face upwards. If the substrates W are tilted in this way, the posture of the substrates W can be set to a horizontal posture with the device surfaces facing upwards. The horizontally positioned substrates W are then transported with the device surfaces facing upwards.

[0118] Figure 11(c) corresponds to Figure 8(c) above, showing the state where a pair of reversing clamps 71 are set to a half-open state, with only the substrate W at the top position exposed above the liquid surface of the immersion tank 73. Subsequently, the reversing clamp support mechanism 72 raises the pair of reversing clamps 71 by an amount equivalent to the full pitch height whenever the relay conveyor OTR conveys substrate W. If this operation is repeated, all 25 substrates W are conveyed to the removal position OP by the relay conveyor OTR.

[0119] Next, the state of the relay transfer mechanism OTR in Figure 8(c) and Figure 11(c) when the reverse clamp 71 transfers the substrate W in a horizontal position will be described. Figure 12(a) shows the state when the relay transfer mechanism OTR moves to the vicinity of the impregnation tank 73 to transfer the substrate W. As shown in Figure 12(a), the second hand 103b of the relay transfer mechanism OTR includes: a sliding mechanism 102 for moving the second hand 103b forward and backward, and a support mechanism 101 for supporting the sliding mechanism 102. The sliding mechanism 102 supports the base of the second hand 103b, and can move the second hand 103b forward as shown in Figure 12(b), and can also move the second hand 103b backward as shown in Figure 12(d). The support mechanism 101 allows the sliding mechanism 102 and the second hand 103b to reciprocate in the Y direction. Furthermore, by rotating the second hand part 103b by 180°, the support mechanism 101 can make the second hand part 103b face the side of the immersion tank 73 or the side of the removal position OP.

[0120] Figure 12(b) shows the state in which the second hand 103b is inserted between the substrate W on the liquid surface and the substrate W below the liquid surface by the sliding mechanism 102. By reaching the state shown in Figure 12(b), the second hand 103b has prepared the substrate W in a horizontal position. At this time, the sliding mechanism 102 moves from the initial position to the forward position.

[0121] Figure 12(c) shows a pair of reversing clamps 71 descending while maintaining their positional relationship, so that the substrate W on the liquid surface comes into contact with the upper surface of the second hand 103b. In this way, if the second hand 103b picks up the substrate W by lowering the reversing clamps 71, the configuration of moving the second hand 103b up and down can be omitted, and a relay transfer mechanism OTR can be formed. Therefore, a substrate processing system with a simple device configuration and fewer failures can be provided.

[0122] Figure 12(d) shows the state of the second hand 103b, which has acquired the substrate W, retracting to the support mechanism 101 of the intermediate transport mechanism OTR via the sliding mechanism 102. Since the pair of reversing clamps 71 are in a semi-open state, the second hand 103b is allowed to pull out the substrate W and supports the substrate W held in the liquid. At this time, the sliding mechanism 102 moves from the forward position to the initial position.

[0123] The partially open state of the pair of reversing clamps 71 will be explained. Figure 13(a) is a cross-sectional view illustrating the state of the 25 substrates W after they have just been rotated 90° or -90°, as shown in Figure 8(b) and Figure 11(b). At this time, one of the pair of reversing clamps 71 is in a closed state, and the two ends of the substrates W reach the deepest part of the V-groove 71a. If the pair of reversing clamps 71 presses down on the two ends of the substrates W and fixes the substrates W in this way, the 25 substrates W will not slip off the pair of reversing clamps 71.

[0124] Figure 13(b) is a cross-sectional view corresponding to Figure 12(b) above. With the pair of reversing clamps 71 in the closed state, the second hand 103b is inserted between the substrates W. Furthermore, in Figure 13(b) and subsequent Figures 13(c) and 13(d), the liquid level in the immersion tank 73 is omitted.

[0125] Figure 13(c) shows the state when one of the reversing clamps 71 is in a closed state and slightly away from each other, forming a half-open state. When the pair of reversing clamps 71 are in the half-open state, the two ends of the substrate W move from the deepest part of the V-groove and abut against the wall forming the V-groove. This state is such that if the reversing clamps 71 are rotated, the substrate W will not slip off the reversing clamps 71, and the substrate W itself is not fixed to the reversing clamps 71. Therefore, when the pair of reversing clamps 71 are in the half-open state, the substrate W can be held in the liquid and handed over to the second hand part 103b on the liquid surface. However, since the second hand part 103b has not yet abutted against the substrate W in the state shown in Figure 13(c), the substrate W must be lowered relative to the second hand part 103b in order to hand over the substrate W to the second hand part 103b.

[0126] Figure 13(d) is a cross-sectional view corresponding to Figure 12(c) above. In Figure 13(d), the pair of reversing clamps 71 are slightly lowered from the state in Figure 13(c), so that the substrate W abuts against the second hand portion 103b. In the state of Figure 13(d), the substrate W is placed on the second hand portion 103b, located away from the wall surface of the V-groove 71a of the reversing clamp 71. That is, in the state of Figure 13(d), the substrate W is not in contact with the reversing clamp 71. Therefore, if the sliding mechanism 102 is activated in this state, causing the second hand portion 103b to move, the substrate W is pulled out without abutting against the reversing clamp 71.

[0127] Figure 14(a) shows the state of the substrate W in a horizontal position obtained from a pair of reversing clamps 71. The substrate processing system of this embodiment has a configuration related to water retention of the substrate W during the substrate transport path of the relay device 6. A shower head 69 supplies a mist of pure water to the substrate W. The shower head 69 is also depicted in Figure 1, and can therefore be understood with reference to it. The tray 105 is a disc-shaped member inserted into the gap between the second hand 103b and the support mechanism 101, holding the pure water supplied from the shower head 69 and dripping from the substrate W. Since the tray 105 obstructs the movement of the sliding mechanism 102, when the sliding mechanism 102 moves as shown in Figures 12(b) and 12(c), the tray 105 moves in the X direction relative to the sliding mechanism 102. The tray moving mechanism 108 is configured to realize the movement of the tray 105.

[0128] Figure 14(b) shows the state when the relay conveying mechanism OTR conveys the substrate W along the Y direction and moves it to the vicinity of the take-out position OP. At this time, the second hand 103b is facing the side of the immersion tank 73 and the reversing clamp 71 while holding the substrate W.

[0129] Figure 14(c) shows the state of the support mechanism 101 of the subsequent relay conveying mechanism OTR when it rotates 180° around the rotating axis 104 that extends in the Z direction. By the movement of this support mechanism 101, the second hand 103b facing the impregnation tank 73 moves toward the take-out position OP.

[0130] Figure 15(a) shows the state when the sliding mechanism 102 slides and the second hand 103b holding the substrate W moves to the take-out position OP. At this time, the substrate W is located at the take-out position OP within the substrate processing system. Also, at this time, the sliding mechanism 102 moves from the initial position to the forward position.

[0131] The transport path 26 is located at the transport position OP. Both the relay transport mechanism OTR and the central robot CR (described later) can receive the substrate W via the transport path 26. The relay transport mechanism OTR delivers the substrate W to the central robot CR of the single-chip processing device 2 via the transport path 26. The transport path 26 has a plurality of (e.g., 3) support pins 111 extending along the Z direction. The support pins 111 can move freely in and out along the Z direction. Each support pin 111 extends and retracts synchronously with its front end at the same height. The base plate 110 is configured to support the base ends of the support pins 111. In Figure 15(a), the front ends of the support pins 111 are located below the transport position OP.

[0132] Figure 15(b) shows the state when the support pin 111 extends and the substrate W supported by the second hand 103b is moved to the position OP. In this way, the substrate W is transferred from the second hand 103b to the support pin 111.

[0133] Figure 15(c) shows the state when the sliding mechanism 102 returns from the forward position to the initial position and the second hand 103b exits from the take-out position OP. The substrate W is supported by the support pin 111 at the take-out position OP. Thus, the substrate W is ready to be received by the central robot CR of the monolithic processing device 2.

[0134] <7. Single-chip processing device: carrier block> The carrier block 12 has an entrance, namely the second loading port 10, into which a plurality of substrates W are placed in a horizontal position with predetermined intervals along the vertical direction. The second loading port 10 is configured to protrude from the outer wall of the carrier block 12, which extends along the width direction (Y direction).

[0135] The internal structure of the shelf block 12 will be described. The shelf block 12 stores and manages the shelves C. The shelf block 12 has a shelf 14 capable of holding the shelves C. The shelf block 12 can store one or more shelves C.

[0136] The carrier block 12 has a plurality of shelves 14 for holding the carrier C. The shelves 14 are provided in the partition wall that separates the carrier block 12 from the transfer unit block 4. Among the shelves 14 are: a shelf 14b for simply temporarily holding the carrier C for storage, and a carrier shelf 14a for holding the substrates picked up by the transfer robot IR of the transfer unit block 4.

[0137] The carrier shelf 14a is configured to hold a carrier C, which stores a plurality of horizontally positioned substrates at predetermined vertical intervals. The carrier shelf 14a is configured to hold the carrier C that stores the substrates W. In this embodiment, one carrier shelf 14a is provided, but a plurality of carrier shelves 14a can be provided. The carrier transport mechanism 11 picks up the carrier C containing the substrates W processed individually from the carrier shelf 14a and places it on the carrier shelf 13a of the batch processing device 1. At this time, the carrier transport mechanism 11 can also temporarily place the carrier C on storage shelves 13b and 14b before placing it on the carrier shelf 13a. The carrier block 12 has one or more carrier shelves 14a.

[0138] <7. Single-chip processing device: transfer block> The transfer unit block 4 is adjacent to the carrier block 12. The transfer unit block 4 has a transfer robot IR, which transfers one horizontally oriented substrate W at a time between the carrier block C and the storage path 24 disposed on the side of the transfer unit block 4 in the single-piece processing block 8 described later. The storage path 24 corresponds to the path of the present invention. The storage path 24 is configured to hold the horizontally oriented substrate W. The transfer robot IR corresponds to the second robot of the present invention. The transfer robot IR is capable of receiving the storage path 24 and the carrier shelf 14a.

[0139] The transfer robot IR stores the processed substrate W on an empty shelf C placed on the carrier shelf 14a. The transfer robot IR includes a hand consisting of a pair of holding bodies that hold the substrate W in a horizontal position at its front end, and an arm supporting the hand. The arm has multiple joints, with its front end connected to the hand and its base connected to a base provided on the arm of the transfer block 4. In this embodiment, the transfer robot IR is configured to receive the processed substrate W via the storage path 24 and store it on the carrier shelf 14a outside the transfer block 4.

[0140] <8. Single-chip processing device: Single-chip processing block> The single-chip processing block 8 is adjacent to the transfer block 4. That is, the single-chip processing block 8 is located deep within the transfer block 4 when viewed from the carrier block 12. At the center of the single-chip processing block 8 in the Y direction, there is a storage path 24 for the transfer robot IR to pick up the chips, and a central robot CR for placing the processed substrates W on the storage path 24. The central robot CR is equivalent to the first robot of the present invention. The central robot CR is configured to pick up the relay device 6 at the take-out position OP, the single-chip processing chamber 48, and the storage path 24. The central robot CR picks up one processed horizontal substrate W at a time from the take-out position OP of the relay device 6 and transports it to the single-chip processing chamber 48. The central robot CR is a substrate transport robot that transports one horizontal substrate W at a time and can move back and forth in the Z direction. Therefore, as described later, the central robot CR can also pick up either the single-piece processing chamber 48 that constitutes the stacked body or the transport path 26.

[0141] The central robot CR can also move in the forward and backward direction. When the central robot CR is in the rear position, it is positioned surrounded by the single-chip processing chambers 48, as shown in Figure 1. Figure 16 is a top view illustrating the overall configuration of the single-chip processing device 2 of the embodiment. As shown in Figure 16, the central robot CR, located at the reference position SP, is positioned surrounded by the transport path 26 and the three single-chip processing chambers 48.

[0142] The central robot CR, like the relay conveyor OTR, has hands for acquiring the substrate W before drying and hands for acquiring the substrate W after drying. The central robot CR uses these hands to transport the substrate W before drying or the substrate W after drying. The positional relationships of the hands are the same as those of the first hand 103a and the second hand 103b of the relay conveyor OTR, so the description is omitted.

[0143] The transfer robot IR and the central robot CR are equivalent to the storage and conveying mechanism of the present invention. The transfer robot IR and the central robot CR are configured to receive the horizontally oriented substrate W from the monolithic processing chamber 48 and move it into the empty carrier C placed on the carrier shelf 14a.

[0144] Figure 17 is a side view of the single-chip processing unit 2 as observed from the batch processing unit 1. As shown in the figure, single-chip processing chambers 47, 48, and 49 are stacked along the Z-direction to form a laminate. That is, a lower section, a middle section, and an upper section are provided in the single-chip processing block 8. The single-chip processing chamber 47 is provided in the lower section. The single-chip processing chamber 48 is provided in the middle section. The single-chip processing chamber 49 is provided in the upper section.

[0145] The transport path 26 is located in the middle section of the monolithic processing block 8. A lower section monolithic processing chamber 47 is located below the transport path 26. An upper section monolithic processing chamber 49 is located above the transport path 26. Therefore, the transport path 26 is configured to replace the middle section monolithic processing chamber 48 in a laminate formed by arranging monolithic processing chambers 47, 48, and 49 along the Z-direction.

[0146] Figure 16 illustrates the middle section region of the single-chip processing block 8. Three single-chip processing chambers 48 are provided in the middle section region. Therefore, the single-chip processing block 8 has: a first stacked body belonging to the first single-chip processing chamber 48, a second stacked body belonging to the second single-chip processing chamber 48, and a third stacked body belonging to the third single-chip processing chamber 48. Furthermore, single-chip processing chambers 49 and 47 are provided above and below the transport path 26. Therefore, a total of 11 single-chip processing chambers are provided in the single-chip processing block 8.

[0147] As shown in Figure 17, the shielding plate 16 is part of the second wall 2B of the single-piece processing device 2. The shielding plate 16 is located in the middle region of the single-piece processing block 8, blocking the opening between the transport path 26 and the transferor block 4. By placing the shielding plate 16 adjacent to the transferor block 4, the relay device 6 can be positioned biased towards the central robot CR. This eliminates the need for the central robot CR to move significantly in the front-to-back direction when it retrieves the substrate W from the transport path 26.

[0148] Furthermore, the central robot CR can move along the Z-direction while holding the substrate W in a forward-backward orientation using its hands. With this configuration, the central robot CR can transport the substrate W along the transport path 26 to the monolithic processing chamber 49 in the upper region and the monolithic processing chamber 47 in the lower region. By placing the transport path 26 in the middle region of the monolithic processing block 8, the transport path 26 can be positioned near the upper region. Similarly, the transport path 26 is positioned near the lower region. Therefore, the Z-direction movement distance of the substrate W in the transport path 26 is shorter relative to both the upper and lower regions.

[0149] The carrier shelf 14a and the single-wafer processing chamber 48 of the single-wafer processing device 2 are arranged in the front-back direction. Therefore, the carrier shelf 14a is positioned in front of the single-wafer processing chamber 48.

[0150] <9. Single-chip processing unit: Single-chip processing chamber> Figure 18 illustrates the configuration of the single-wafer processing chamber 48 disposed in the single-wafer processing block 8. The single-wafer processing chamber 48 can receive one horizontally oriented substrate W at a time and perform chemical treatment and drying treatment. Therefore, the single-wafer processing chamber 48 is equivalent to the substrate drying section of the present invention. The single-wafer processing chamber 48 enables the drying of one horizontally oriented substrate W at a time after batch processing.

[0151] The single-wafer processing chamber 48 has a vacuum clamp 213 for adsorbing and supporting the substrate W. The vacuum clamp 213 is a circular plate with a diameter smaller than that of the substrate W, which can adsorb and support the horizontally positioned substrate while rotating about a vertical axis. The rotation axis of the substrate W is aligned with the central axis of the substrate W. When the substrate W is dried in the single-wafer processing chamber 48, the liquid adhering to the substrate W is flung away by rotating the supported substrate W. The single-wafer drying unit is composed of the single-wafer processing chamber 48 provided in the single-wafer processing apparatus 2. The single-wafer processing chamber 48 is configured to dry the substrate W by spin drying.

[0152] In addition, the single-chip processing chamber 48 includes: a guide 219 for receiving the ejected liquid, and a nozzle 217 for supplying liquids such as IPA (isopropyl alcohol) to the substrate W. The nozzle 217, located above the vacuum jig, can avoid interference with the vacuum jig 213 when the central robot CR places the substrate W on the vacuum jig 213.

[0153] Furthermore, the single-chip processing chamber 48 is equipped with a support pin 211 for raising and lowering the substrate W. By extending and retracting the support pin 211, the substrate W can be received by the central robot CR, or the substrate W can be placed in the vacuum fixture 213.

[0154] The single-chip processing chambers 47 and 49 adopt the same configuration as the single-chip processing chamber 48.

[0155] Vacuum clamp 213 corresponds to the rotation mechanism of this invention. Vacuum clamp 213 is configured to rotate the substrate W about the normal. The rotation mechanism of this invention is composed of a spin clamp (vacuum clamp 213) disposed in the single-wafer processing chambers 47, 48, and 49 of the single-wafer processing device 2. Vacuum clamp 213 is capable of rotating the horizontally oriented substrate W received in the device at least half a turn about the vertical axis and handing it over to the central robot CR.

[0156] <10. Control Department> The substrate processing system includes: a first control unit 131 related to the control of the batch processing device 1, a second control unit 132 related to the control of the single-chip processing device 2, and a third control unit 136 related to the control of the relay device 6. Refer to Figure 1 for details regarding each control unit. Although not shown in Figure 1, the substrate processing system includes a memory unit corresponding to each control unit. Control units 131, 132, and 136 are, for example, composed of a CPU (Central Processing Unit). The specific configuration of each control unit is not limited; for example, each control unit can be composed of a single processor or individual processors. Furthermore, multiple processors can be used to control the batch processing device 1; this is also true for the single-chip processing device 2 and the relay device 6.

[0157] Controls related to the control unit 131 include, for example, controls related to the carrier conveyor 11, the first substrate conveyor HTR, the first posture conversion mechanism 15, the second substrate conveyor WTR, batch processing units BPU1~BPU6, and the batch drying chamber DC. Controls related to the control unit 132 include, for example, controls related to the central robot CR, the single-wafer processing chamber 47, the single-wafer processing chamber 48, the single-wafer processing chamber 49, and the transfer robot IR. Furthermore, controls related to the third control unit 136 include, for example, controls related to the semi-batch conveyor STR, the batch standby tank 65, the elevator LF65, the underwater posture conversion unit 55 (the second posture conversion mechanism), the transport path 26, the relay conveyor OTR, and the pure water supply device connected to the shower head 69.

[0158] The first control unit 131, the second control unit 132, and the third control unit 136 correspond to the control units of the present invention. The first control unit 131, the second control unit 132, and the third control unit 136 are configured to control the batch processing device 1, the single-chip processing device 2, and the relay device 6.

[0159] The memory unit stores and controls related programs and parameters. The memory unit can be a single device or individual devices corresponding to each control unit. Furthermore, the configuration of the devices implementing the memory unit in the substrate processing system of this embodiment is not particularly limited.

[0160] <11. Substrate Processing Flow> The process of substrate processing in the embodiment will now be described with reference to the flowchart in FIG19. Each action described thereafter is executed by the control of any of the first control unit 131, the second control unit 132, and the third control unit 136 described above.

[0161] Step S10: The entire batch of substrates W placed on the carrier shelf 13a is removed from the carrier C and placed in a horizontal position. The substrates W in this step are untreated substrates. The carrier C placed on the carrier shelf 13a is obtained and transported from the first loading port 9 by the carrier transport mechanism 11. The carrier C in this step is referred to as the first carrier C1 for distinction. The first substrate transport mechanism HTR removes the substrates W from the first carrier C1 placed on the carrier shelf 13a and places them into the transfer block 5.

[0162] Step S15: The first substrate transport mechanism HTR delivers a batch of multiple substrates W in a horizontal position to the HVC posture conversion unit 23. The HVC posture conversion unit 23 converts the substrates W taken from the first carrier C1 from a horizontal position to a vertical position. The batch of substrates W after posture conversion is supported by the push rod mechanism 25. The second substrate transport mechanism WTR obtains a batch of multiple substrates W from the push rod mechanism 25 at the substrate handover position PP. At this time, the substrates can be batch-grouped in the push rod mechanism 25. Then, the second substrate transport mechanism WTR delivers the obtained multiple substrates (batch) to the elevator LF2 waiting at the substrate handover position. The second substrate transport mechanism WTR can transport the multiple substrates (batch) from the substrate handover position PP of the push rod mechanism 25 to the substrate handover position of the elevator LF2 via the drying batch support unit 33.

[0163] Step S20: The elevator LF2, which acquires a batch of multiple substrates, descends to the processing position. The batch of multiple substrates is immersed in the batch chemical treatment tank CHB2. Thus, the elevator LF2 immerses the entire batch of multiple substrates (batch) in the batch chemical treatment tank CHB2 after being converted to a vertical position, performing the first chemical treatment. At this time, the chemical treatment etches half the target thickness onto the substrate surface. Upon completion of the first chemical treatment, the elevator LF2 raises the batch of multiple substrates (batch) to the substrate transfer position. The second substrate transport mechanism WTR acquires the batch of multiple substrates (batch) from the elevator LF2 and transfers the batch of multiple substrates (batch) to the elevator LF1, which is waiting at the substrate transfer position. The elevator LF1 immerses the entire batch of multiple substrates (batch) after the first chemical treatment in the batch rinsing treatment tank CHB1, performing the first batch rinsing treatment. Thus, elevators LF1 and LF2 will convert multiple substrates (batch) into a vertical position and immerse them in batch rinsing tank CHB1 and batch processing tank CHB2 to perform the first batch processing.

[0164] Step S25: The underwater posture conversion unit 55 acquires the plurality of substrates W transported by the second substrate transport mechanism WTR via the semi-batch transport mechanism STR. The position where the substrates are transferred from the second substrate transport mechanism WTR to the semi-batch transport mechanism STR is the loading position IP. The underwater posture conversion unit 55 converts the entire batch of substrates that have undergone the first batch processing from a vertical posture to a horizontal posture.

[0165] Figure 20 shows the process flow of substrate W in steps S10 to S25 above.

[0166] Step S30: The relay conveyor OTR retrieves one substrate W at a time from the underwater posture conversion unit 55, which has been converted to a horizontal posture, and conveys it to the delivery position OP of the delivery path 26. That is, the relay conveyor OTR conveys the substrates converted to a horizontal posture from the batch processing unit 1 to the single-piece processing unit 2. When conveying the horizontally postured substrate W towards the delivery path 26, the support pin 111 extends. In this way, the preparation for handing over the substrate W to the central robot CR is completed.

[0167] Step S35: The substrate W is transported by the central robot CR to the single-wafer processing chamber 48. Assume that the notch on the substrate W is facing forward at this time. The single-wafer processing chamber 48 performs spin drying on the substrate W while holding it in the vacuum fixture 213. Thus, after the first batch processing, the single-wafer processing chamber 48 dries one substrate W at a time, after orientation change and transport to the single-wafer processing device.

[0168] Step S40: The single-wafer processing chamber 48 finally rotates the substrate W obtained from the central robot CR by half a turn. That is, the notch of the dried substrate W faces backward. In this way, the single-wafer processing chamber 48 obtains the substrate W before drying and delivers it to the central robot CR in a reversed state after drying.

[0169] Step S45: The central robot CR, which acquires the substrate W, transports the substrate W to the storage path 24. The substrate W held in the storage path 24 is acquired by the transfer robot IR and stored in the empty shelf C on the carrier placement shelf 14a. For distinction, this shelf C is referred to as the second shelf C2. Thus, the central robot CR and the transfer robot IR move the horizontally positioned substrate W, which is being transported to the single-chip processing device 2, into the second shelf C2 placed on the carrier placement shelf 14a.

[0170] Step S50: The carrier conveying mechanism 11 transfers the second carrier C2, which is placed on the carrier placement shelf 14a, to the carrier placement shelf 13a. Thereby, the second carrier C2 is transferred from the single-wafer processing unit 2 to the batch processing unit 1. The substrate W stored in the second carrier C2 is placed back in the batch processing unit 1 after the first batch processing.

[0171] Figure 21 shows the process flow of substrate W in steps S30 to S50 above.

[0172] Step S55: The entire batch of substrates W placed on the second carrier C2 of the carrier shelf 13a is removed and placed in a horizontal position. The substrates W in this step are the substrates that have completed the first batch processing. Furthermore, the first substrate transfer mechanism HTR removes the substrates W from the second carrier C2 placed on the carrier shelf 13a and places them into the transfer block 5. Thus, when the second carrier C2 containing the substrates W that have undergone the first batch processing is placed on the carrier shelf 13a of the batch processing device 1, the first substrate transfer mechanism HTR removes the substrates W from the second carrier C2 placed on the carrier shelf 13a.

[0173] Step S60: The first substrate transport mechanism HTR delivers a batch of multiple substrates W in a horizontal position to the HVC posture conversion unit 23. The HVC posture conversion unit 23 converts the substrates W taken from the second carrier C2 from a horizontal position to a vertical position. The batch of substrates W after posture conversion is supported by the push rod mechanism 25. The second substrate transport mechanism WTR obtains a batch of multiple substrates W from the push rod mechanism 25 at the substrate handover position PP. At this time, the substrates can be batch-grouped in the push rod mechanism 25. Then, the second substrate transport mechanism WTR delivers the obtained multiple substrates (batch) to the elevator LF2 waiting at the substrate handover position. The second substrate transport mechanism WTR can transport the multiple substrates (batch) from the substrate handover position PP of the push rod mechanism 25 to the substrate handover position of the elevator LF2 via the drying batch support unit 33.

[0174] Step S65: The elevator LF2, which acquires a batch of multiple substrates, descends to the processing position. The batch of multiple substrates is immersed in the batch chemical treatment tank CHB2. Thus, the elevator LF2 immerses the entire batch of multiple substrates (batch) in the batch chemical treatment tank CHB2 after being converted to a vertical position, and performs a second chemical treatment. At this time, the chemical treatment etches half the target thickness onto the substrate surface. That is, the chemical treatment is performed in two steps, resulting in etching the target thickness onto the substrate surface. When the second chemical treatment is completed, the elevator LF2 raises the batch of multiple substrates to the substrate transfer position. The second substrate transport mechanism WTR acquires the batch of multiple substrates from the elevator LF2 and delivers the batch of multiple substrates to the elevator LF1, which is waiting at the substrate transfer position. The elevator LF immerses a batch of substrates (batch) that have completed the second chemical treatment in the batch rinsing tank CHB1, performing the second batch rinsing treatment. Thus, elevators LF1 and LF2 immerse a batch of substrates (batch) in the batch rinsing tank CHB1 and batch treatment tank CHB2, respectively, in a vertical position, performing the second batch treatment.

[0175] In the second batch processing, the substrate W from the first batch processing is rotated 180° around its normal. The single-chip processing chamber 48 rotates the substrate W received from the central robot CR in step S40 180° around its central axis and returns it to the central robot CR. Therefore, the second batch processing is performed with the substrate's orientation reversed relative to that of the substrate in the first batch processing. Step S40 is a step after the first batch processing and before the second batch processing.

[0176] Step S70: The underwater posture conversion unit 55 acquires the plurality of substrates W transported by the second substrate transport mechanism WTR via the semi-batch transport mechanism STR. The position where the substrates are transferred from the second substrate transport mechanism WTR to the semi-batch transport mechanism STR is the loading position IP. The underwater posture conversion unit 55 converts the entire batch of substrates that have undergone the second batch processing from a vertical posture to a horizontal posture.

[0177] Figure 22 shows the process flow of substrate W from steps S55 to S70.

[0178] Step S75: The relay conveyor OTR retrieves one substrate W at a time from the underwater posture conversion unit 55, which has been converted to a horizontal posture, and conveys it to the delivery position OP of the delivery path 26. That is, the relay conveyor OTR conveys the substrates converted to a horizontal posture from the batch processing unit 1 to the single-piece processing unit 2. When conveying the horizontally postured substrate W towards the delivery path 26, the support pin 111 extends. In this way, the preparation for handing over the substrate W to the central robot CR is completed.

[0179] Step S80: The substrate W is transported by the central robot CR to the single-wafer processing chamber 48. Assume the notch of the substrate W is facing forward at this time. The single-wafer processing chamber 48 performs spin drying on the substrate W while holding it in the vacuum fixture 213. Thus, after the first batch processing, the single-wafer processing chamber 48 dries one substrate W at a time, after orientation change and transport to the single-wafer processing device. The single-wafer processing chamber 48 ultimately does not rotate the substrate W obtained from the central robot CR. That is, the notch of the dried substrate W faces forward. Thus, the single-wafer processing chamber 48 obtains the substrate W before drying and delivers it to the central robot CR after drying without rotating the substrate W.

[0180] Step S85: The central robot CR, which acquires the substrate W, transports the substrate W to the storage path 24. The substrate W held in the storage path 24 is acquired by the transfer robot IR and stored in the empty carrier C placed on the carrier shelf 14a. For distinction, this carrier C is referred to as the third carrier C3. Thus, the central robot CR and the transfer robot IR move the horizontally positioned substrate W, which is being transported to the single-chip processing device 2, into the third carrier C3 placed on the carrier shelf 14a. The third carrier C3 is then transported to the second loading port 10 by the carrier transfer mechanism 11. Thus, the substrate processing of this embodiment is completed.

[0181] Therefore, in the single-chip processing device 2, the second carrier C2, which stores the substrate W before the second batch processing, and the third carrier C3, which stores the substrate W after the second batch processing, are stored together in the carrier placement shelves 14a and 14b. According to the configuration of this embodiment, the carrier C is managed to prevent the third carrier C3 from being mistakenly transferred to the batch processing device 1. The management of the carrier C is achieved by controlling the barcodes or other labels attached to each carrier C through the factory's mainframe computer. Data stored when the mainframe computer controls the carrier C includes the location of the notch on the substrate W stored in the carrier C.

[0182] Figure 23 shows the process flow of substrate W from steps S75 to S85.

[0183] <12. Effects of the Implementation Scheme> As described above, according to the aforementioned configuration, the control unit of the substrate processing system controls the central robot CR and the transfer robot IR to store the substrate W, which has completed the first batch processing, in the second carrier C2. Then, the control unit controls the first substrate transport mechanism HTR to remove the substrate W from the second carrier C2 for the second batch processing. At this time, the control unit controls the single-wafer processing chamber 48 to reverse the substrate W vertically before the second batch processing. With this configuration, the batch processing differences between the lower part of the substrate located at the bottom of the batch chemical treatment tank CHB2 and the upper part of the substrate located at the surface of the batch chemical treatment tank CHB2 are homogenized, thus providing a substrate processing system capable of manufacturing high-quality devices.

[0184] Figure 24 is a schematic diagram illustrating the effects of the present invention. After the initial batch processing, as shown in Figure 24(a), the entire substrate W is in an unprocessed state. In this case, there is no difference in processing state between the upper and lower parts of the substrate W. However, if batch processing of the substrate W continues, as shown in Figure 24(b), the etching state of the substrate W differs. This is because, as indicated by the arrows in Figure 24, the batch chemical treatment tank CHB2 agitates the treatment liquid from the bottom to the surface. Since the flow rate of the treatment liquid increases below the substrate W near the fluid outlet 27, etching of the substrate W proceeds rapidly in that area. On the other hand, since the flow rate of the treatment liquid decreases above the substrate away from the fluid outlet 27, etching of the substrate W proceeds slowly in that area.

[0185] In the substrate processing system of the present invention, as shown in FIG24(c), the substrate is inverted to perform a second batch processing. In the second batch processing, the lower part of the etched substrate W is located at the water surface of the batch chemical treatment tank CHB2, and the upper part of the etched substrate W is located at the bottom of the batch chemical treatment tank CHB2. If batch processing is performed again in this state, the etched portion of the substrate W is slowly acid-treated, and the etched portion of the substrate W is quickly acid-treated. Finally, as shown in FIG24(d), the degree of acid treatment of the substrate W is constant throughout the substrate, and the second batch processing ends. Thus, according to the present invention, by setting the substrate processing to be constant throughout the substrate, a substrate processing system capable of manufacturing high-quality devices can be provided.

[0186] Based on the above configuration, since the processing liquid is stirred up and down while batch processing is performed, highly efficient batch processing can be achieved. Furthermore, according to the substrate processing system of the present invention, even when the configuration of stirring the processing liquid up and down while performing batch processing is adopted, the inhomogeneities of substrate processing generated during batch processing are homogenized, thus enabling the manufacture of high-quality devices.

[0187] According to the above configuration, a conveying mechanism is provided to transport the second carrier C2 from the carrier placement shelf 14a to the carrier placement shelf 13a. With this configuration, the transport of the second carrier C2 from the carrier placement shelf 14a to the carrier placement shelf 13a can be performed in the substrate processing system. With this configuration, the transport of the second carrier C2 can be performed without relying on manual transport or transport by a carrier transport crane equipped in the factory.

[0188] Based on the above configuration, after the first batch processing, the single-wafer processing chamber 48 will dry one substrate W at a time, which will be changed in position and transported to the single-wafer processing device 2. With this configuration, just like after the second batch processing, the substrate W can be dried gently even after the first batch processing, thus enabling the manufacture of high-quality devices.

[0189] According to the above configuration, the relay conveying mechanism OTR includes: a first hand 103a for obtaining the dried substrate W, and a second hand 103b for obtaining the substrate W before drying. With this configuration, both the dried substrate W and the substrate W before drying can be conveyed through the relay device 6. Since the first hand 103a is always dry, the substrate W will not be wetted by the first hand 103a. If the substrate W before drying is conveyed using the second hand 103b, which is different from the first hand 103a, the substrate W before drying can also be reliably conveyed within the relay device 6.

[0190] According to the above configuration, the horizontally positioned substrate W, received by the vacuum clamp 213, rotates half a turn around the vertical axis and is then handed over to the central robot CR and the transfer robot IR. With this configuration, substrate rotation can be achieved using existing configurations. That is, the present invention can be realized by modifying the control of existing device configurations.

[0191] Based on the above configuration, the substrate W is dried by spin drying. This allows for the construction of a single-wafer processing chamber 48 using a proven and long-established device.

[0192] According to the above configuration, the monolithic processing apparatus 2 includes a transport path 26 capable of carrying a horizontally positioned substrate W. Furthermore, the above configuration includes a central robot CR capable of receiving the transport path 26, the transport position OP of the relay device 6, and the monolithic processing chamber 48. The central robot CR is positioned within the monolithic processing chamber 48. Based on the above configuration, by optimizing the configuration of the substrate processing system, a substrate processing system capable of rapidly performing substrate processing based on highly efficient substrate transport can be provided.

[0193] Based on the above configuration, the carrier shelf 13a and the batch chemical treatment tank CHB2 of the batch processing device are arranged in the front-to-back direction, the transfer in position IP and the transfer out position OP of the relay device 6 are arranged in the left-to-right direction, and the carrier shelf 14a and the single-wafer processing chamber 48 of the single-wafer processing device 2 are arranged in the front-to-back direction. Based on the above configuration, by optimizing the configuration of the substrate processing system, a substrate processing system that can rapidly perform substrate processing based on highly efficient substrate transport can be provided.

[0194] <13. Implementation of Variations in the Example> The present invention is not limited to the above-described configuration and may be implemented in the following variations.

[0195] <Example 1 of the variation> According to the embodiment, the configuration is as follows: after the first batch processing, the substrate W is transferred to the single-wafer processing device 2 in its state before drying. However, the present invention is not limited to this configuration. It can also be configured as follows: the batch drying chamber DC dries multiple substrates W after the first batch processing, and the dried substrates W are transferred to the single-wafer processing device 2. The batch drying chamber DC corresponds to the batch drying section of the present invention. The batch drying chamber DC dries the entire batch of substrates W after the first batch processing.

[0196] In Variation Example 1, after the first batch processing, the relay device 6 uses the first hand 103a to transport the dried substrate W. On the other hand, since the relay device 6 processes the substrate W before drying after the second batch processing, it uses the second hand 103b to transport the substrate W. Furthermore, when transporting the substrate W after the first batch processing, the batch standby tank 65 and the immersion tank 73 become empty and are not kept in pure water. This is to prevent the dried substrate W from being immersed in pure water through the batch standby tank 65 and the immersion tank 73. On the other hand, when transporting the substrate W after the second batch processing, the batch standby tank 65 and the immersion tank 73 are kept in pure water, as in the embodiment. The shower head 69 sprays or does not spray pure water depending on the dryness of the substrate W.

[0197] Figure 25 is a flowchart illustrating the substrate processing flow of Variation 1. This flowchart largely follows the substrate processing flow illustrated in Figure 19. However, the step S22 related to batch drying is located between steps S20 and S25, and step S35 of Figure 19 is omitted, which differs from the substrate processing flow of the embodiment. Variation 1 involves performing substrate drying processing before transferring the substrate W to the single-wafer processing apparatus 2. Therefore, it is unnecessary to perform substrate drying processing using the single-wafer processing chamber 48 from the time of transfer to the single-wafer processing apparatus 2. Step S22 will be described below.

[0198] Step S22: After the batch rinsing process is completed, a plurality of substrates W (batch) are transferred to the batch drying chamber DC. This transfer is achieved by the second substrate transfer mechanism WTR lifting platform LF1. The batch drying chamber DC dries the entire batch of substrates W after the first batch processing.

[0199] The subsequent processing differs slightly from the embodiment, and this point will be explained accordingly. First, the second substrate transport mechanism WTR changes the substrates that have undergone batch drying from a vertical position to a horizontal position. The horizontally positioned substrates W are transported one at a time by the relay transport mechanism OTR to the take-out position OP. Then, the central robot CR transports the substrates W from the take-out position OP to the single-piece processing chamber 48.

[0200] The single-piece processing chamber 48 rotates the vacuum jig 213 half a turn and delivers the substrate W to the central robot CR. Subsequent processing is the same as the substrate processing flow in the embodiment. Figure 26 shows the manner in which the substrate W is transported via the batch drying chamber DC in Variation 1.

[0201] Based on the above configuration, a batch drying chamber DC is provided to dry the entire batch of substrates W after the first batch processing. With such a configuration, the etching of substrates W can be minimized, and the entire batch of substrates after the first batch processing can be dried with minimal adverse effects caused by substrate drying, thus providing a substrate processing system with improved production capacity.

[0202] <Example 2> Without adopting the configuration of Variation Example 1, the batch drying chamber DC can be omitted to form the batch processing apparatus 1. In this substrate processing system, the carrier shelf 13a and the batch rinsing tanks CHB1 to CHB6 are arranged in the front-to-back direction. That is, the carrier shelf 13a is positioned in front of the batch rinsing tank CHB1.

[0203] <Example 3> In this embodiment, a single-chip processing chamber 48 is used to achieve a half-turn rotation of the substrate W, but the present invention is not limited to this configuration. As shown in FIG27, it can be configured as follows: a half-turn rotation mechanism SRM for rotating the substrate W is provided at the transport position OP of the relay device 6 to achieve a half-turn rotation of the substrate W. The half-turn rotation mechanism SRM is equivalent to the rotation mechanism of the present invention. The half-turn rotation mechanism SRM is provided at the transport position OP of the relay device 6, causing the substrate W, which is transported to the transport position OP in a horizontal position, to rotate half a turn around the vertical axis.

[0204] Figure 28 illustrates the semi-circular rotation mechanism SRM in detail. The semi-circular rotation mechanism SRM has a plurality of support pins 111 whose front end can move up and down between an upper first position P1 and a lower second position P2. The plurality of support pins 111 move synchronously, causing the front end to move between the first position P1 and the second position P2. The plurality of support pins 111 raise the substrate W held by the relay transport mechanism OTR to the first position P1, and receive the substrate W from the relay transport mechanism OTR, causing the received substrate W to descend onto the rotary table 113. This configuration will be described in detail below.

[0205] As shown in Figure 28(a), the semi-circular rotation mechanism SRM has a rotary table 113 capable of supporting a horizontally positioned substrate W. The rotary table 113 has a circular central portion 113a and three radially extending portions 113b extending from the central portion 113a. The rotary table 113 is capable of rotating about the central portion 113a, and the rotary table 113 rotates about the Z-axis. The three extending portions 113b rotate in tandem with the rotation of the central portion 113a.

[0206] The center portion 113a of the rotary table 113 is positioned to avoid the support pins 111, and this point will be explained accordingly. The support pins 111 are located at a position away from the periphery of the center portion 113a of the rotary table 113. The three support pins 111 are positioned at the vertices of an equilateral triangle whose center of gravity is the same as the rotation center of the rotary table 113, so that even if the center portion 113a of the rotary table 113 rotates, it will not interfere with the support pins 111.

[0207] The protrusion 113b of the rotary table 113 is configured to reliably support the horizontally positioned substrate W. It is positioned to avoid the multiple protrusions extending from the rotation center of the rotary table 113 in its initial position. The front end of the protrusion 113b is configured to protrude from the substrate W when the rotary table 113 supports the horizontally positioned substrate W, forming three portions that reliably support the periphery of the substrate W. The protrusion 113b is sufficiently elongated to minimize interference with the support pin 111. When the rotary table 113 is rotated, the position of the protrusion 113b aligns with the position of the support pin 111. Since the support pin 111 is retracted in its initial state, even if the rotary table 113 is rotated, the protrusion 113b will not immediately collide with the support pin 111. However, if the support pin 111 extends while the protrusion 113b is stopped at a position overlapping with the support pin 111, then the support pin 111 will collide with the protrusion 113b. Therefore, the rotary table 113 has a range of angles from which it cannot be stopped. In this embodiment, the protrusion 113b is sufficiently elongated, so the range of this angle is minimized.

[0208] Furthermore, the support pins 111 are positioned so as not to interfere with the intermediate transfer mechanism OTR above the half-turn rotation mechanism SRM. That is, in the initial state, the three support pins 111 are located in the space between a pair of blades of the second hand 103b in the transfer position OP. This ensures that the support pins 111 do not collide with the second hand 103b when the support pins 111 receive the substrate W in the transfer position OP. The support pins 111 in the initial state are located lower than the second position P2, which is set below the transfer position OP. The second position P2 is detailed in Figure 28(b).

[0209] The semi-circular rotation mechanism SRM includes a rotary table 113. This rotary table 113 adjusts the position of the notch on the substrate W by rotating the horizontally positioned substrate one piece at a time at the take-out position OP. Figure 28(b) shows a more detailed configuration of the semi-circular rotation mechanism SRM. As shown in Figure 28(b), the semi-circular rotation mechanism SRM includes: a rotary table 113 for holding the substrate W; a rotating shaft 114 extending along the Z direction to support the rotary table 113 for rotational flexibility; and a rotating shaft drive motor 114m for driving the rotating shaft 114. In Figure 28(b), the protrusion 113b of the rotary table 113 is omitted. The rotating drive motor 114m is attached to the base plate 110 of the semi-circular rotation mechanism SRM.

[0210] A support pin telescopic mechanism 112 is provided at the base of each support pin 111 to extend and retract the support pin 111. The support pin telescopic mechanism 112 is attached to the base plate 110. The three support pin telescopic mechanisms 112 operate synchronously to maintain the front ends of the support pins 111 at the same height while moving each support pin 111. Therefore, the three support pins 111 can support the extension and retraction of the horizontally positioned substrate W. In Figure 29(a), each support pin 111 is in the retracted state, and the front ends of each support pin 111 are located lower than the rotary table 113. In Figure 29(a), one of the three support pins 111 is omitted from the drawing.

[0211] Figure 28(a) shows the state when the support pin 111 is in the extended state. As such, the front end of the support pin 111 moves to the first position P1. Since the first position P1 is located at the take-out position OP of the relay device 6, the half-turn rotation mechanism SRM is ready to receive the horizontally oriented substrate W from the relay transfer mechanism OTR as the support pin 111 extends.

[0212] Figure 29(a) shows the state when the support pin 111 returns to its retracted state. When the support pin 111 is in the retracted state, the front end of the support pin 111 reaches the second position P2, which is lower than the upper surface of the rotary table 113. At this time, the substrate W, along with the retraction of the support pin 111, abuts against the rotary table 113 and is no longer supported by the support pin 111. In this way, the substrate W is transferred from the support pin 111 to the rotary table 113.

[0213] Figure 29(b) shows the state when the rotary table 113 rotates 180° and the notch N at the right end of the substrate W moves to the left end of the substrate W. Thus, the position of the notch N on the second substrate W2 is changed by the half-turn rotation mechanism SRM. Figures 30(a) and 30(b) are top views illustrating step S20. Figure 30(a) shows the state of the rotary table 113 before rotation, and Figure 30(b) shows the state of the rotary table 113 after rotation. As shown in Figure 30(a), the protrusion 113b of the rotary table 113 is positioned to avoid the support pin 111. This position is the initial position of the protrusion 113b, set so that the protrusion 113b does not collide with the support pin 111 when the support pin 111 is in an extended state. The rotary table 113 rotates 180° around the Z-axis from the state in Figure 30(a) to the state in Figure 30(b). At this time, because the support pin 111 is in a retracted state, the front end of the support pin 111 does not collide with the protrusion 113b of the rotary table 113.

[0214] As shown in Figure 30(b), the extended portion 113b of the rotated table 113 is positioned to avoid the support pin 111 after rotation. This position is the position of the extended portion 113b after rotation, and the position after rotation is set so that the extended portion 113b does not collide with the support pin 111 when the support pin 111 is in the extended state.

[0215] Subsequently, support pin 111 is extended. At the same time, as substrate W rises to the take-out position OP, the center-facing robot CR is ready to acquire substrate W.

[0216] Figure 31 is a flowchart showing the substrate processing flow of Variation 3. This flowchart largely follows the substrate processing flow described in Figure 19. However, step S32, related to the half-turn rotation of the substrate W, is located between steps S30 and S35, and step S40 of Figure 19 is omitted, which differs from the substrate processing flow of the embodiment. Variation 3 involves performing a half-turn rotation of the substrate W before it is transported to the single-wafer processing apparatus 2. Therefore, it is unnecessary to perform a half-turn rotation of the substrate W using the single-wafer processing chamber 48 from the time it is transported to the single-wafer processing apparatus. Step S32 will be described later.

[0217] Step S32: The horizontally positioned substrate W is transported one at a time to the delivery position OP. This transport is achieved by the intermediate transport mechanism OTR. At this time, the front end of the support pin 111 is in position 1 P1. Shortly after, the support pin 111 retracts and moves to position 2 P2. The substrate W, handed over to the rotary table 113, is rotated 180° by the rotary table 113. Afterward, the support pin 111 extends, and the front end of the support pin 111 is in position 1 P1. Thus, the substrate W rises again to the delivery position OP, and is ready to be transported by the central robot CR to the single-chip processing chamber 48.

[0218] The subsequent processing differs slightly from the embodiment, and this point will be explained accordingly. The substrate W received by the central robot CR from the take-out position OP is transported to the monolithic processing chamber 48. The monolithic processing chamber 48 dries the substrate W by spin drying. Then, the monolithic processing chamber 48 does not change the orientation of the notch on the received substrate W, and the dried substrate W is received by the central robot CR. The central robot CR transports the received substrate W to the storage path 24. The subsequent processing is the same as the substrate processing flow described in FIG19.

[0219] Figure 32 illustrates the process flow of substrate W during the operation of the substrate processing system in Variation Example 3.

[0220] As described above, according to the configuration of Variation 3, the rotation mechanism of the present invention is a half-turn rotation mechanism SRM installed at the take-out position OP of the relay device. The half-turn rotation mechanism SRM causes the substrate W, which is in a horizontal position and has been transported to the take-out position OP, to rotate half a turn around the vertical axis. With this configuration, the present invention can be implemented even without changing the control method of the single-wafer processing chamber 48. Furthermore, this configuration is suitable for substrate processing systems equipped with single-wafer processing chambers that do not have a spin clamp.

[0221] <Example 4> The above-described embodiment includes a single-wafer processing chamber 48 with a spin clamp, but the present invention is not limited to this configuration. If, for example, variation 3 is adopted, a configuration is used in which the substrate W is rotated half a turn outside the single-wafer processing chamber 48, then a single-wafer processing chamber without a spin clamp can be mounted in the substrate processing system of the present invention. As an example of a single-wafer processing chamber without a spin clamp, there is a configuration that uses a supercritical fluid to dry the substrate. This single-wafer processing chamber is referred to as a supercritical fluid chamber.

[0222] For example, a supercritical fluid chamber is used to dry substrate W using carbon dioxide, which is a supercritical fluid. Other fluids besides carbon dioxide can be used for drying. The supercritical state is achieved by placing carbon dioxide at its inherent critical pressure and critical temperature. Specifically, the pressure is 7.38 MPa and the temperature is 31°C. Since the surface tension of the fluid is zero in the supercritical state, the gas-liquid interface does not affect the circuit pattern on the surface of substrate W. Therefore, by using a supercritical fluid for drying substrate W, circuit pattern collapse, also known as pattern instability, can be prevented from occurring on substrate W.

[0223] According to the configuration of Variation Example 4, the monolithic drying section of the present invention uses a supercritical fluid to dry the substrate. With such a configuration, the substrate W can be dried without damaging the circuitry formed on the device surface, thus providing a substrate processing system capable of producing high-quality devices.

[0224] <Example 5> In the above embodiment, the substrate W in a horizontal position is rotated half a turn to reverse its vertical orientation during batch processing; however, the present invention is not limited to this configuration. The same operation can be performed by rotating the vertical substrate W half a turn.

[0225] Figure 33 is a top view of the substrate processing system of Variation 5. As shown in the figure, a notch arrangement mechanism WNA is provided in the batch processing apparatus 1 of Variation 5. The notch arrangement mechanism WNA also functions to support a plurality of substrates W in a vertical position. Therefore, the drying batch support 33 of the embodiment is replaced by the notch arrangement mechanism WNA in Variation 5. The notch arrangement mechanism WNA is configured to rotate the plurality of substrates W in a vertical position around a horizontal axis so that the positions of the notches on each substrate W are consistent. In addition, the notch arrangement mechanism WNA of Variation 5 also has the function of rotating each substrate W in batch by 180°. The rotation mechanism of the present invention is equivalent to the notch arrangement mechanism WNA provided in the batch processing apparatus 1 of Variation 5. The notch arrangement mechanism WNA rotates the plurality of substrates W in a vertical position half a circle around the normal and reverses the direction up and down. In the batch processing apparatus 1 of Variation 5, the carrier rack 13a, the notch arrangement mechanism WNA and the batch chemical treatment tank CHB2 are arranged in the front-to-back direction.

[0226] Figure 34(a) is a perspective view illustrating the notch arrangement mechanism WNA of Variation Example 5. The notch arrangement mechanism WNA includes: a flat plate 300 forming the bottom surface, a first side plate 301 disposed at one end of the flat plate, and a second side plate 302 disposed at the other end. Between the first side plate 301 and the second side plate 302, a drive roller 311 is disposed that is accessible to the end (angled portion) of a vertically positioned substrate W. The drive roller 311 is elongated in the direction from the first side plate 301 toward the second side plate 302 and can rotate about an axis parallel to the extension direction. As described later, the first side plate 301 and the second side plate 302 can rotate synchronously relative to the flat plate 300. The first side plate 301 and the second side plate 302 are configured to hold the drive roller 311, the driven roller 312, and the auxiliary roller 313 (described later) rotatably.

[0227] Protruding plates 300a and 300b extending vertically are provided at both ends of the flat plate 300. The protruding plates 300a and 300b, the first side plate 301, and the second side plate 302 are parallel to each other. Between the protruding plates 300a and 300b, a driven roller 312 is provided, accessible to the end (angled portion) of the vertically positioned substrate W. The drive roller 311 is elongated in the direction from the protruding plate 300a toward the protruding plate 300b and can rotate about an axis parallel to the extending direction. The drive roller 311 and the driven roller 312 are parallel to each other, and the vertically positioned substrate W is held and maintained by these two rollers.

[0228] As shown in Figure 34(b), the first side plate 301 has a front side and a back side, with the side of the first side plate 301 facing the second side plate 302 being the back side. Various components related to the drive roller 311 are mounted on the front side. The central axis of the first pulley 321 is connected to the central axis of the drive roller 311, driving the roller 311 to rotate as the first pulley 321 is driven. The second pulley 322 is connected to the first pulley 321 via the first belt 325. The second pulley 322 can rotate via a drive motor located on the back side of the first side plate 301.

[0229] A third pulley 323 is provided on the front of the first side plate 301. The third pulley 323 rotates in conjunction with the second pulley 322. That is, the third pulley 323 is configured to rotate together with the second gear 328, which shares a common axis of rotation. The second pulley 322 is configured to rotate together with the first gear 327, which shares a common axis of rotation. Because the first gear 327 and the second gear 328 mesh with each other, when the drive motor provided on the first side plate 301 is actuated, the rotational force is transmitted through the first gear 327 and the second gear 328 and reaches the third pulley 323.

[0230] A fourth pulley 324 is provided on the front side of the first side plate 301. The fourth pulley 324 is connected to the third pulley 323 by a second belt 326. The auxiliary roller 313 is a friction wheel whose front end contacts the fourth pulley 324. The auxiliary roller 313 is a component parallel to the drive roller 311 and the driven roller 312 that extend in the left-right direction.

[0231] Therefore, if the drive motor installed on the first side plate 301 is activated, the first pulley 321, the second pulley 322, the third pulley 323, and the fourth pulley 324 will start rotating simultaneously. Along with this, the drive roller 311 and the auxiliary roller 313 will also start rotating simultaneously.

[0232] The connector 331 is provided at the part connecting the protruding plate 300a and the first side plate 301. The connector 331 holds the first side plate 301 in such a way that the first side plate 301 can rotate freely relative to the protruding plate 300a about a left-right axis (about an axis parallel to the direction from the first side plate 301 toward the second side plate 302).

[0233] The connector 332 is provided at the part connecting the protruding plate 300b and the second side plate 302. The connector 332 holds the second side plate 302 in such a way that the second side plate 302 can rotate freely relative to the protruding plate 300b about a left-right axis (about an axis parallel to the direction from the first side plate 301 toward the second side plate 302).

[0234] The first side plate 301 and the second side plate 302 are integrated by a connecting plate 303 parallel to the flat plate 300. Therefore, the first side plate 301 and the second side plate 302 can rotate synchronously around the left and right axes with the joints 331 and 332 as the center.

[0235] The telescopic rod 333 is a component connecting the first side plate 301 and the flat plate 300. The telescopic rod 333 has a hydraulic cylinder and can extend and retract under the control of a control unit. The initial state of the telescopic rod 333 is the retracted state, positioning the connecting plate 303 and the flat plate 300 in a parallel relationship. When the telescopic rod 333 extends from this state, the connecting plate 303 and the flat plate 300 are in an inclined position. The notch arrangement mechanism WNA performs substrate transfer between itself and the second substrate conveying mechanism WTR in the initial state where the connecting plate 303 and the flat plate 300 are parallel.

[0236] The operation of the notch arrangement mechanism WNA will be explained. Figure 34(b) shows the notch arrangement mechanism WNA in its initial state with the telescopic rod 333 in the retracted state. When the second substrate conveying mechanism WTR delivers a batch to the notch arrangement mechanism WNA, as shown in Figure 34(b), the substrate W is held by the drive roller 311 and the driven roller 312. In this state, the auxiliary roller 313 does not contact the end (angled portion) of the substrate W.

[0237] Figure 35 shows the initial state of the drive roller 311 rotating. Assume that after the substrate W is delivered to the notch arrangement mechanism WNA, the drive roller 311 rotates. As such, the end (angled portion) of the substrate W in contact with the drive roller 311 is guided by the drive roller 311, and the substrate W rotates about its central axis (about the normal: about the horizontal axis). As the substrate W rotates, the driven roller 312, which is in contact with the end (angled portion) of the substrate W, also begins to rotate. Thus, the driven roller 312 is able to hold one end of the rotating substrate W.

[0238] At this time, the notch N provided on the substrate W can move freely near the auxiliary roller 313. This is because the auxiliary roller 313 does not contact the end (angled portion) of the substrate W.

[0239] Figure 36 shows the notch alignment mechanism WNA during the notch alignment process that aligns the positions of the notches N on the substrate W. To align the positions of the notches N, firstly, the telescopic rod 333 is extended, causing the first side plate 301 to tilt relative to the flat plate 300. As such, the substrate W moves away from the driven roller 312 and contacts the auxiliary roller 313. If the drive motor is actuated in this state, the substrate W rotates around the central axis, as illustrated in Figure 35.

[0240] Furthermore, as shown in Figure 37(a), because the auxiliary roller 313 is designed to be sufficiently small, it is intentionally designed so that the substrate W cannot pass through the notch N of the auxiliary roller 313, thus preventing excessive rotation of the substrate W. That is, the auxiliary roller 313 is clamped by the notch N, and the substrate W cannot rotate. During this period, the drive roller 311 also intends to rotate the substrate W, but the substrate W slips relative to the drive roller 311, and as a result, it does not rotate.

[0241] If the drive roller 311 continues to rotate in this state, all the substrates W in the batch will stop rotating. This is because the notches N of each substrate W are captured by the auxiliary roller 313 and cannot move freely. Thus, the direction of the notches of each substrate W becomes fixed. That is, the position of the notches N of each substrate W is consistent with the position of the auxiliary roller 313.

[0242] Figure 37(b) illustrates the operation of rotating the substrate W, which constitutes the batch, half a turn. To rotate the substrate W half a turn, the batch is simply placed in the notch arrangement mechanism WNA in its initial state, and the drive roller 311 is rotated a predetermined number of times. In this way, the substrate W is guided by the drive roller 311 to rotate half a turn. Furthermore, it is preferable to perform the operation shown in Figures 35, 36, and 37(a) before rotating the substrate W half a turn, but this pre-operation is not necessarily required.

[0243] Figure 38 is a flowchart showing the substrate processing flow of Variation 5. This flowchart largely follows the substrate processing flow described in Figure 19. However, step S62, related to the half-turn rotation of the substrate W, is located between steps S60 and S65, and step S40 of Figure 19 is omitted, which differs from the substrate processing flow of the embodiment. Variation 3 involves rotating the substrate W obtained from the second carrier C2 by half a turn. Therefore, it is not necessary to perform a half-turn rotation of the substrate W using the monolithic processing chamber 48 before it is transferred to the second carrier C2. Step S62 will be described later.

[0244] Step S62: The second substrate transport mechanism WTR delivers multiple substrates W (batch) in a vertical position to the notch arrangement mechanism WNA. The notch arrangement mechanism WNA rotates the substrates W half a turn to adjust the position of the notches. The second substrate transport mechanism WTR receives the multiple substrates W (batch) after the half-turn rotation process from the notch arrangement mechanism WNA and transports them to the elevator LF2.

[0245] The subsequent processing differs slightly from the embodiment, and this point will be explained accordingly. In step S80, the single-wafer processing chamber 48 dries the substrate W by spin drying. Then, the single-wafer processing chamber 48 does not change the orientation of the notch on the received substrate W, and the dried substrate W is received by the central robot CR. The central robot CR transports the received substrate W to the storage path 24. The subsequent processing is the same as the substrate processing flow described in FIG19.

[0246] Figure 39 illustrates the process flow of substrate W during the operation of the substrate processing system in Variation Example 3.

[0247] As described above, according to the configuration of Variation 5, the notch arrangement mechanism WNA is provided in the batch processing device 1. The notch arrangement mechanism WNA causes a plurality of substrates W, which are in a vertical position, to rotate half a turn around the horizontal axis and then reverse their orientation. With such a configuration, the time required to rotate the substrates W half a turn can be shortened, thus providing a substrate processing system with improved production capacity.

[0248] <Example 6> In the above embodiments, the configuration is as follows: the carrier C is transferred between the carrier placement shelf 13a and the carrier placement shelf 14a built into the substrate processing system, but the present invention is not limited to this configuration. As shown in FIG40, it can also be configured such that the single-wafer processing device 2 does not have the carrier block 12. According to this configuration, the transfer robot IR can move forward and backward in the front-back direction. The substrate W after single-wafer processing is received by the transfer robot IR and placed on the empty carrier C on the second loading port 10. The transfer of the second carrier C2 described in step S50 of FIG19 is achieved by receiving the second carrier C2 from the second loading port 10 and placing the second carrier C2 on the first loading port 9. Therefore, the second loading port 10 of variation 6 corresponds to the second placement part of the present invention.

[0249] The transfer of the second carrier C2 is accomplished by the carrier transfer mechanism 400 shown in Figure 40. The carrier transfer mechanism 400 is a crane mechanism capable of moving the carrier C in the left-right direction, and is controlled by the control unit described in the embodiment. Alternatively, the transfer of the second carrier C2 can be performed by a carrier transfer robot installed in the factory instead of the carrier transfer mechanism 400, or the transfer of the second carrier C2 can be performed manually.

[0250] 1: Batch processing device / equipment 2: Single-chip processing device / device 3: Storage block 4: Transporter Block 5: Transfer Block 6: Relay device 7: Batch processing block 8: Single-chip processing block 9: Loading Port 1 10: Second loading port 11: Carrier conveying mechanism 12: Carrier Block 13: Shelf 13a: Scaffold for placing shelves 13b: Shelves for storage 14a: Scaffold for placing shelves 14b: Shelves / carriers for storage 15: First posture conversion mechanism 16: Shielding panel 17: Bridging section 23: HVC Posture Transition Section 23A: Support Platform 23B: Leveling section 23C: Vertical holding part 23D: Rotary Drive Mechanism 24: Storage Path 25: Push rod mechanism 25A: Pusher 25B: Lifting and Rotating Part 25C: Horizontal moving part 25D: Track 26: Moving out path 27: Spray outlet 29, 30: Fixtures 31X, 31Y: Guide rails 32Y: Relay Track 33: Drying Batch Support Department 47, 49: Single-chip processing chamber 48: Single-wafer processing chamber / First single-wafer processing chamber / Second single-wafer processing chamber / Third single-wafer processing chamber 55: Underwater posture transition section 62a: Sidewall 62b: Base plate 62c: Top plate 65: Batch standby slots 69: Shower head 71: Reversing clamp 71a: V-groove 72: Reversing clamp support mechanism 73: Impregnation tank 101: Supporting Organizations 102: Sliding Mechanism 103a: First hand 103b: Second hand 103c: Base 104, 114: Rotation axis 105: Pallet 108: Pallet Moving Mechanism 110: Base Plate 111: Support Sales 112: Support pin telescopic mechanism 113: Rotary table 113a: Central part 113b: Protruding part 114m: Rotary shaft drive motor 131: First Control Unit 132: Second Control Unit / Control Unit 136: Third Control Unit 211: Support sales 213: Vacuum clamps 217: Nozzle 219: Guide Components 300: Tablet 300a, 300b: Protruding plates 301: First side plate 302: Second side panel 303: Connecting plate 311: Drive roller 312: Driven roller 313: Auxiliary roller 321: First pulley 322: Second pulley 323: Third pulley 324: 4th pulley 325: First belt 326: Second belt 327: Gear 1 328: Second Gear 331, 332: Connectors 333: Telescopic pole 400: Carrier Transfer Mechanism ACB: Moving and Storage Department AX2: Horizontal axis BPU1: Batch Processing Unit / First Batch Processing Unit BPU2: Batch Processing Unit / Second Batch Processing Unit BPU3: Batch Processing Unit / 3rd Batch Processing Unit BPU4: Batch Processing Unit / 4th Batch Processing Unit BPU5: Batch Processing Unit / 5th Batch Processing Unit BPU6: Batch Processing Unit / 6th Batch Processing Unit C: Carrier / First Carrier / Second Carrier CHB2: Batch processing tank / batch processing tank CHB3, CHB4, CHB5, CHB6: Batch treatment tanks CP: pathway CR: Central Robot DC: Batch drying chamber HTR: First substrate transport mechanism IP: Moving-in location IR: Transport Robot LF1~LF6: Elevators N: Gap ONB: Batch Flushing Treatment Tank OP: Move out of the location OTR: Relay Transport Mechanism P1: Position 1 P2: Position 2 PP: Substrate junction R1: Batch processing area R2: Bulk transport area S10, S15, S20, S22, S25, S30, S32, S35, S40, S45, S50, S55, S60, S62, S65, S70, S75, S80, S85: Steps SP: Reference Position SRM: Half-circle rotation mechanism STR: Semi-batch transport mechanism W: substrate WNA: Gap Arrangement Mechanism WTR: Second substrate transport mechanism X: Forward / backward direction / Direction Y: Direction / Width Direction Z: Vertical direction / direction / axis

Claims

1. A substrate processing system, characterized in that it is a substrate processor, and comprises: a batch processing device for batch processing of a plurality of substrates; a single-wafer processing device for single-wafer processing of one substrate at a time; a relay device for transferring the batch-processed substrates from the batch processing device to the single-wafer processing device; and a control unit for controlling the batch processing device, the single-wafer processing device, and the relay device; wherein the batch processing device comprises: at least one batch processing tank; a first placement unit capable of placing a carrier that holds a plurality of substrates horizontally with predetermined intervals along a vertical direction; and a substrate acquisition and conveying mechanism for removing substrates from the carrier placed in the first placement unit. The first posture conversion mechanism converts the substrates taken from the aforementioned carrier by the substrate receiving and conveying mechanism from the aforementioned carrier frame from a horizontal posture to a vertical posture; and the elevator is capable of immersing a batch of multiple substrates in the aforementioned batch processing tank after the posture conversion by the first posture conversion mechanism into the aforementioned batch processing tank; and the aforementioned single-piece processing device includes: a single-piece drying unit, capable of drying one horizontally oriented substrate at a time after batch processing; a second placement unit, capable of placing the aforementioned carrier frame; and a receiving and conveying mechanism, capable of moving horizontally oriented substrates into the carrier frame placed in the aforementioned second placement unit; and the aforementioned relay device includes: a second posture conversion mechanism, capable of converting the substrates received from the aforementioned batch processing device from a vertical posture to a horizontal posture; and a relay conveying mechanism, capable of conveying one horizontally oriented substrate at a time to the aforementioned single-piece processing device; and the aforementioned control unit sequentially performs the following series of operations: The system controls the aforementioned substrate acquisition and conveying mechanism to remove substrates from the first carrier placed in the aforementioned first placement section; controls the aforementioned first posture conversion mechanism to convert the substrates removed from the aforementioned first carrier from a horizontal posture to a vertical posture; controls the aforementioned elevator to immerse a batch of substrates converted to the aforementioned vertical posture into the aforementioned batch processing tank for the first batch processing; controls the aforementioned second posture conversion mechanism to convert the substrates that have undergone the aforementioned first batch processing from a vertical posture to a horizontal posture; controls the aforementioned relay conveying mechanism to transport the substrates converted to the aforementioned horizontal posture from the aforementioned batch processing device to the aforementioned single-wafer processing device; controls the aforementioned receiving and conveying mechanism to move the horizontally positioned substrates transported to the aforementioned single-wafer processing device into the second carrier placed in the aforementioned second placement section; When the second carrier containing the substrate that has undergone the first batch processing is placed in the first placement section of the batch processing device, the substrate acquisition and conveying mechanism is controlled to remove the substrate from the second carrier placed in the first placement section; the first posture conversion mechanism is controlled to change the substrate removed from the second carrier from a horizontal posture to a vertical posture.The system controls the aforementioned elevator to immerse a batch of substrates, which have been converted to the aforementioned vertical orientation, into the aforementioned batch processing tank for a second batch processing; controls the aforementioned second orientation conversion mechanism to convert the substrates that have undergone the aforementioned second batch processing from a vertical orientation to a horizontal orientation; controls the aforementioned relay conveying mechanism to transport the substrates converted to the aforementioned horizontal orientation from the aforementioned batch processing device to the aforementioned single-wafer processing device; controls the aforementioned single-wafer drying unit to dry one horizontally oriented substrate at a time transported to the aforementioned single-wafer processing device; and controls the aforementioned receiving and conveying mechanism to transport the horizontally oriented substrates that have undergone the aforementioned drying treatment into the third carrier placed in the aforementioned second placement unit; and the aforementioned substrate processing system further includes: a rotation mechanism that rotates the aforementioned substrate around the normal of the substrate; and the aforementioned control unit controls the aforementioned rotation mechanism after the aforementioned first batch processing and before the aforementioned second batch processing to perform the aforementioned second batch processing in an orientation that is reversed relative to the orientation of the substrate in the aforementioned first batch processing. ; 2. The substrate processing system of claim 1, wherein the aforementioned batch processing tank includes a nozzle at the bottom for ejecting fluid; and the aforementioned control unit controls the aforementioned batch processing tank to eject fluid from the aforementioned bottom during the aforementioned first batch processing and the aforementioned second batch processing, thereby causing the held processing liquid to be stirred up and down.

3. The substrate processing system of claim 1, comprising: a carrier conveying mechanism that conveys the aforementioned second carrier from the aforementioned second placement section to the aforementioned first placement section.

4. The substrate processing system of claim 1, wherein the aforementioned control unit controls the aforementioned single-piece drying unit to dry one substrate at a time after the aforementioned first batch processing, by changing the orientation to a horizontal orientation and transporting the substrate to the aforementioned single-piece processing device.

5. The substrate processing system of claim 1, wherein the aforementioned batch processing apparatus comprises: a batch drying unit that dries the entire batch of substrates after the first batch processing; and the aforementioned control unit that controls the aforementioned batch drying unit to dry the entire batch of substrates after the first batch processing, and controls the aforementioned second posture conversion mechanism to convert the substrates after the batch drying process from a vertical posture to a horizontal posture.

6. The substrate processing system of claim 5, wherein the aforementioned relay conveying mechanism comprises: a first hand for obtaining the dried substrate and a second hand for obtaining the substrate before drying.

7. The substrate processing system of claim 1, wherein the aforementioned rotating mechanism is composed of a spin clamp disposed in the single-wafer processing chamber of the aforementioned single-wafer processing device; and the aforementioned spin clamp rotates the horizontally positioned substrate received by the device by half a turn around the vertical axis and delivers it to the aforementioned receiving and conveying mechanism.

8. The substrate processing system of claim 1, wherein the aforementioned single-wafer drying section is composed of a single-wafer processing chamber disposed in the aforementioned single-wafer processing apparatus; and the aforementioned single-wafer processing chamber dries the substrate by spin drying.

9. The substrate processing system of claim 1, wherein the aforementioned rotating mechanism is disposed at the transport position of the aforementioned relay device; and the aforementioned rotating mechanism causes the substrate in a horizontal position transported to the transport position to rotate half a turn around the vertical axis.

10. The substrate processing system of claim 9, wherein the aforementioned monolithic drying section uses a supercritical fluid to dry the substrate.

11. The substrate processing system of claim 1, wherein the aforementioned rotating mechanism is provided in the aforementioned batch processing apparatus; and the aforementioned rotating mechanism causes a plurality of substrates in a vertical position to rotate half a turn around a horizontal axis and reverse vertically.

12. The substrate processing system of claim 1, wherein the aforementioned monolithic processing device includes a path capable of placing a substrate in a horizontal orientation; and the aforementioned receiving and conveying mechanism includes: a first robot capable of receiving the aforementioned relay device's removal position, the aforementioned monolithic drying section, and the aforementioned path; and a second robot capable of receiving the aforementioned path and the aforementioned second placement section; wherein the aforementioned first robot is positioned in a location surrounded by the aforementioned substrate drying section.

13. The substrate processing system of claim 1, wherein the first placement section and the batch processing tank of the aforementioned batch processing apparatus are arranged in a front-back direction; and the loading position and the unloading position of the aforementioned relay device are arranged in a left-right direction orthogonal to the aforementioned front-back direction; and the second placement section and the aforementioned single-wafer drying section of the aforementioned single-wafer processing apparatus are arranged in the aforementioned front-back direction.

14. The substrate processing system of claim 5, wherein the aforementioned batch processing apparatus has the first placement section, the aforementioned batch drying section, and the aforementioned batch processing tank arranged in a front-back direction; and the aforementioned relay device insertion position and the aforementioned relay device removal position are arranged in a left-right direction orthogonal to the aforementioned front-back direction; and the aforementioned single-wafer processing apparatus has the second placement section and the aforementioned single-wafer drying section arranged in the aforementioned front-back direction.

15. The substrate processing system of claim 11, wherein the aforementioned batch processing apparatus, the aforementioned first placement section, the aforementioned rotating mechanism, and the aforementioned batch processing tank are arranged in the front-back direction; and the aforementioned relay device insertion position and the aforementioned relay device removal position are arranged in the left-right direction orthogonal to the aforementioned front-back direction; and the aforementioned single-wafer processing apparatus, the aforementioned second placement section and the aforementioned single-wafer drying section are arranged in the aforementioned front-back direction.

Images