Semiconductor manufacturing apparatus, pick-up method and method for manufacturing semiconductor devices

Abstract

[Problem] The aim is to provide a technique that makes the creation of timing diagram recipes easier. [Solution] A semiconductor manufacturing apparatus includes: a lifting unit having a plurality of blocks, each of which can independently move up and down; a display device displaying a setting screen on which the height of the plurality of blocks can be input step by step in a lifting sequence of the plurality of blocks; and a control unit configured to set a plurality of lifting parameters using an input from a setting item on the setting screen, and to control the movement of the plurality of blocks according to the set lifting parameters.

Description

Technical Field

[0001] This disclosure relates to semiconductor manufacturing apparatus, such as die bonding apparatus having a push-up unit. Prior Technology

[0002] As a process in the manufacturing of semiconductor devices, there is a stripping process that peels the dies separated from the wafer from the dicing tape. In the stripping process, for example, dies are peeled off one at a time from the back of the dicing tape held by the wafer supply section using a lifting unit, and dies are picked up using a pick-up head or an adsorption nozzle such as a clamp provided on the bonding head.

[0003] The lifting unit, for example, is configured such that each of a plurality of blocks can operate independently. The lifting sequence of the plurality of blocks is configured into a plurality of steps, and the operation of the plurality of blocks of the lifting unit is controlled according to a timing diagram formula that allows the height and speed of the plurality of blocks to be set block by block and step by step. (For example, Patent Document 1) [Previous Technical Documents] [Patent Literature]

[0004] [Patent Document 1] Japanese Patent Application Publication No. 2020-161534 Summary of the Invention

[0005] [The problem that the invention aims to solve] The timing diagram formulation disclosed in Patent Document 1 is complex and difficult to produce, requiring a lot of effort.

[0006] The subject matter disclosed herein is to provide a technique that simplifies the creation of timing diagram formulations. Other subject matter and novel features will become clear from the description and diagrams in this specification. [Methods used to solve problems]

[0007] A brief summary of the representative subjects in this disclosure is provided below. That is, a semiconductor manufacturing apparatus includes: a lifting unit having a plurality of blocks, each of which can independently move up and down; a display device displaying a setting screen on which the height of the plurality of blocks can be input step by step in the lifting sequence of the plurality of blocks; and a control unit configured to set a plurality of lifting parameters by using one of the setting items on the setting screen, and to control the movement of the plurality of blocks according to the set plurality of lifting parameters. [Invention Benefits]

[0008] According to the disclosure, the creation of timing diagram formulas can be made easier. Simple Explanation of the Diagram

[0009] [Figure 1] Figure 1 is a schematic top view illustrating an example configuration of the die bonding apparatus in the embodiment. [Figure 2] Figure 2 is a diagram illustrating the schematic configuration when viewed from the direction of arrow A in Figure 1. [Figure 3] Figure 3 is a schematic cross-sectional view showing the main part of the wafer supply section shown in Figure 1. [Figure 4] Figure 4 is a block diagram illustrating the schematic configuration of the control system of the die bonding device shown in Figure 1. [Figure 5] Figure 5 is a flowchart illustrating a method for manufacturing a semiconductor device using the die bonding apparatus shown in Figure 1. [Figure 6] Figure 6 is a top view of the lifting unit shown in Figure 2. [Figure 7] Figure 7 is a schematic diagram of the main cross-section of the lifting unit shown in Figure 6. [Figure 8] Figure 8 is a schematic diagram illustrating the connection example between the block and the drive shaft when the number of blocks is less than four. [Figure 9] Figure 9 is a diagram illustrating the process of setting the timing diagram recipe according to the setting screen. [Figure 10] Figure 10 is a setting example of a setting screen for multi-level actions in a four-level block and a diagram showing the height of the block according to the situation. [Figure 11] Figure 11 is a diagram illustrating the timing of block actions in the lift sequence under the setting values ​​shown in the setting screen of Figure 10. [Figure 12] Figure 12 is a setting example for the setting screen of the reverse multi-stage action and a diagram showing the height of the block according to the situation. [Figure 13] Figure 13 is a diagram illustrating the timing of block actions in the lift sequence under the setting values ​​shown in the setting screen of Figure 12. [Figure 14] Figure 14 is a setting example of the setting screen for the reverse multi-level action in the three-level block and a diagram showing the height of the block according to the situation. [Figure 15] Figure 15 is a setting example of the setting screen for the inverse multi-level action in the second-order block and a diagram showing the height of the block according to the situation. [Figure 16] Figure 16 is a setting example of the setting screen for the reverse multi-level action in the fourth-level block and a diagram showing the height of the block according to the situation. [Figure 17] Figure 17 is a setting example of the setting screen for the general action in the fourth-order block and a diagram showing the height of the block according to the situation. [Figure 18] Figure 18 is a setting example of the setting screen for the inverse multi-level action in the fourth-level block and a diagram showing the height of the block according to the situation. [Figure 19] Figure 19 is a diagram illustrating the timing of block actions in the lift sequence under the setting values ​​shown in the setting screen of Figure 18. Implementation

[0010] The following description uses drawings to illustrate the embodiments. In this description, the same symbols are sometimes used to label the same constituent elements, and repeated explanations are omitted. Furthermore, in order to make the explanation clearer, the width, thickness, shape, etc., of each part are sometimes schematically shown rather than the actual appearance. In addition, the dimensional relationships and ratios of the elements may not be consistent between multiple drawings.

[0011] The configuration of a die-bonding apparatus according to one embodiment of a semiconductor manufacturing apparatus will be described using Figures 1 to 3. Figure 1 is a schematic top view illustrating an example configuration of the die-bonding apparatus in the embodiment. Figure 2 is a diagram illustrating the schematic configuration as viewed from the direction of arrow A in Figure 1. Figure 3 is a schematic cross-sectional view illustrating the main part of the wafer supply section shown in Figure 1.

[0012] The die bonding apparatus 1, generally speaking, includes: a wafer supply section 10; a pick-up section 20; an intermediate stage section 30; a bonding section 40; a transport section 50; a substrate supply section 60; a substrate removal section 70; and a control section (control device) 80. The Y2-Y1 direction is the front-to-back direction of the die bonding apparatus 1, the X2-X1 direction is the left-to-right direction, and the Z1-Z2 direction is the up-and-down direction. The wafer supply section 10 is disposed on the front side of the die bonding apparatus 1, and the bonding section 40 is disposed on the rear side.

[0013] The wafer supply unit 10 includes: a wafer cassette lifter 11; a wafer holding stage 12; a lifting unit 13; and a wafer identification camera 14.

[0014] The wafer cassette lifter 11 moves the wafer cassette (not shown) storing a plurality of wafer rings WR up and down to the wafer transport height. The wafer alignment slot (not shown) aligns the wafer rings WR supplied from the wafer cassette lifter 11. The wafer extractor (not shown) removes the wafer rings WR from the wafer cassette and supplies them to the wafer holding stage 12, from which they are removed and stored in the wafer cassette.

[0015] The wafer holding stage 12 has: an expansion ring 121 that holds the wafer ring WR; and a support ring 122 that is held by the wafer ring WR and horizontally positions the dicing tape DT. A lifting unit 13 is disposed inside the support ring 122.

[0016] A wafer W, divided into multiple grains D, is bonded (attached) to a dicing tape DT. A film-like adhesive material DF, called a grain-attach film (DAF), is attached between the wafer W and the dicing tape DT. The adhesive material DF hardens upon heating.

[0017] The wafer holding stage 12 moves in the X1-X2 and Y1-Y2 directions using a drive unit (not shown) to move the picked-up die D to the position of the lifting unit 13. Furthermore, the wafer holding stage 12 rotates the wafer ring WR in the XY plane using a drive unit (not shown). The lifting unit 13 moves vertically using a drive unit (not shown). The lifting unit 13 peels the die D from the dicing tape DT. The wafer holding stage 12 and the lifting unit 13 constitute a pick-up device (semiconductor manufacturing apparatus). A pick-up unit 20 may also be included in the pick-up device.

[0018] The wafer holding stage 12 lowers the expansion ring 121 holding the wafer ring WR when the die D is lifted. At this time, the support ring 122 does not lower, stretching the dicing strip DT held by the wafer ring WR, expanding the spacing between the dies D to prevent interference and contact between them, thus facilitating the separation and lifting of each die. The expansion ring 121 and the support ring 122 are collectively referred to as the expander. The lifting unit 13 lifts the die D from below, thereby advancing the separation of the die D and improving the pick-up capability of the die D when using a collet.

[0019] The wafer identification camera 14 identifies the pickup position of the die D picked up from the wafer W and performs surface inspection of the die D.

[0020] The pickup unit 20 includes a pickup head 21 and a Y-drive unit 23. The pickup head 21 is provided with a clamp 22 that holds the stripped die D at its top. The pickup head 21 picks up the die D from the wafer supply unit 10 and places it on the intermediate stage 31. The Y-drive unit 23 moves the pickup head 21 in the Y1-Y2 direction. The pickup unit 20 also includes drive units (not shown) for raising, lowering, rotating, and moving the pickup head 21 in the X direction.

[0021] The intermediate stage 30 includes: an intermediate stage 31 for mounting a die D; and a stage recognition camera 34 for identifying the die D on the intermediate stage 31. The intermediate stage 31 has an attraction hole for adsorbing the mounted die D. The mounted die D is temporarily held by the intermediate stage 31. The intermediate stage 31 serves as both a stage for mounting the die D and a pickup stage for picking up the die D.

[0022] The bonding section 40 includes: a bonding head 41; a Y-drive unit 43; a substrate identification camera 44; and a bonding stage 46. The bonding head 41 is provided with a clamp 42 for adsorbing and holding the die D at its top. The Y-drive unit 43 moves the bonding head 41 in the Y1-Y2 direction. The substrate identification camera 44 captures images of the position identification marks (not shown) on the substrate S to identify the bonding position. Here, a plurality of product areas (hereinafter referred to as packaging areas P) are formed on the substrate S, which will become the last package. The position identification marks are provided for each packaging area P. The bonding stage 46 is raised when the die D is placed on the substrate S, supporting the substrate S from below. The bonding stage 46 has a suction port (not shown) for vacuum adsorption of the substrate S, which can fix the substrate S. The bonding stage 46 has a heating unit (not shown) for heating the substrate S. The bonding section 40 has various drive units (not shown) for raising, lowering, rotating, and moving the bonding head 41 in the X direction.

[0023] With this configuration, the bonding head 41 corrects the pickup position and posture based on the image data from the stage recognition camera 34, and picks up the die D from the intermediate stage 31. Furthermore, the bonding head 41 is bonded to the packaging area P of the substrate S based on the image data from the substrate recognition camera 44, or is bonded in the form of stacking on the die already bonded to the packaging area P of the substrate S.

[0024] The conveying unit 50 includes a conveying claw 51 for gripping and conveying a substrate S, and a conveying channel 52 for moving the substrate S. The substrate S is moved in the X direction by a nut (not shown) provided on the conveying claw 51 in the conveying channel 52, driven by a ball screw (not shown) provided along the conveying channel 52. With this configuration, the substrate S moves from the substrate supply unit 60 along the conveying channel 52 to the engagement position, and after engagement, moves to the substrate delivery unit 70, where the substrate S is delivered.

[0025] The substrate supply unit 60 removes the substrate S stored and moved into the transport fixture from the transport fixture and supplies it to the transport unit 50. The substrate removal unit 70 stores the substrate S transported by the transport unit 50 in the transport fixture.

[0026] Next, the control unit 80 will be explained using FIG4. FIG4 is a block diagram illustrating the schematic configuration of the control system of the die bonding apparatus shown in FIG1.

[0027] The control system 8 includes a control unit (control device) 80, a drive unit 86, a signal unit 87, and an optical system 88. The control unit 80, broadly speaking, includes: a control and arithmetic unit 81 mainly composed of a CPU (Central Processing Unit); a memory unit 82; an input / output device 83; a bus cable 84; and a power supply unit 85. The memory unit 82 includes a main memory unit 82a and an auxiliary memory unit 82b. The main memory unit 82a is composed of RAM (Random Access Memory) storing processing programs, etc. The auxiliary memory unit 82b is composed of HDD (Hard Disk Drive), SSD (Solid State Drive), etc., storing control programs, processing recipes, control data required for control, image data, etc. The processing recipes are used by the control unit 80 to execute various procedures and conditions in the semiconductor device manufacturing process (described later), combining them in a way that achieves a predetermined result, and functioning as a program.

[0028] The input / output device 83 includes: a monitor 83a that displays device status, information, etc.; a touch panel 83b that inputs operator instructions; a mouse 83c that operates the monitor 83a; and an image acquisition device 83d that acquires image data from the optical system 88. The input / output device 83 further includes a motor control device 83e and an I / O signal control device 83f. The motor control device 83e controls the XY stage (not shown) of the wafer supply section 10, the ZY drive shaft of the bonding head stage, the drive section of the lifting unit 13, etc. The I / O signal control device 83f acquires or controls signals from a signal unit 87, which includes switches and volume control knobs that control the brightness of various sensors, lighting devices, etc. The optical system 88 includes a wafer identification camera 14, a stage identification camera 34, and a substrate identification camera 44. The control and processing unit 81 receives and processes necessary data via bus 84, and transmits information to the control unit 21, monitor 83a, etc.

[0029] A portion of the semiconductor device manufacturing process (semiconductor device manufacturing method) using the die bond apparatus 1 will be described using FIG5. FIG5 is a flowchart illustrating the semiconductor device manufacturing method using the die bond apparatus shown in FIG1. ​​In the following description, the operation of each component constituting the die bond apparatus 1 is controlled by the control unit 80.

[0030] (Wafer loading procedure: Procedure S1) A wafer cassette (not shown) containing wafer rings WR is inserted into a wafer cassette lifter 11. The wafer supply unit 10 removes the wafer rings WR from the wafer cassette and moves them into a wafer holding stage 12.

[0031] (Substrate handling procedure: Procedure S2) A transfer fixture storing substrate S is inserted into substrate supply unit 60. Substrate supply unit 60 removes substrate S from the transfer fixture. The removed substrate S is then transferred into joint unit 40 via transfer unit 50.

[0032] (Pickup procedure: Program S3) After procedure S1, the wafer holding stage 12 is moved in a manner that allows the desired die D to be picked up from the dicing tape DT. The die D is photographed using the wafer identification camera 14, and the die D is positioned and its surface inspected based on the image data obtained from the photograph. Image processing is performed on the image data to calculate the offset (X, Y, θ directions) of the die D on the wafer holding stage 12 from the die position reference point of the die bonding device, and the die is positioned accordingly. Furthermore, the die position reference point is pre-set with a predetermined position of the wafer holding stage 12 as the initial setting of the device. Image processing is performed on the image data to conduct a surface inspection of the die D.

[0033] The positioned grain D is peeled off from the cutting strip DT using the lifting unit 13 and the pick-up head 21. The grain D peeled off from the cutting strip DT is adsorbed and held by the clamp 22 provided on the pick-up head 21, and then transported and placed on the intermediate stage 31.

[0034] A stage recognition camera 34 photographs the die D on the intermediate stage 31. Based on the image data obtained from the photograph, the die D is positioned and its surface is inspected. Image processing is performed on the image data to calculate the offset (X, Y, θ directions) of the die D on the intermediate stage 31 from the die position reference point of the die bonding device, and the die D is positioned accordingly. Furthermore, the predetermined position of the intermediate stage 31 is maintained as the initial setting of the device for the die position reference point. Image processing is performed on the image data to inspect the surface of the die D.

[0035] The die D is transported to the pick-up head 21 of the intermediate stage 31 and then returned to the wafer supply section 10. Following the above sequence, the next die D is stripped from the dicing tape DT, and then, in the same sequence, the dies D are stripped one at a time from the dicing tape DT.

[0036] (Joining procedure: Procedure S4) Using the transport unit 50, the substrate S is transported to the bonding stage 46. The substrate S, placed on the bonding stage 46, is imaged using the substrate recognition camera 44. Based on the image data obtained from the photography, the substrate S is positioned and its surface is inspected. The image data is processed to calculate the offset (X, Y, θ directions) of the substrate S from the substrate position reference point of the die bonding apparatus 1. Furthermore, the substrate position reference point is pre-set with a predetermined position of the bonding portion 40 as the initial setting of the apparatus. The image data is processed to perform surface inspection of the substrate S.

[0037] Based on the offset of the die D on the intermediate stage 31 calculated in program S3, the adsorption position of the bonding head 41 is corrected, and the die D is adsorbed using the clamp 42. Using the bonding head 41 that has adsorbed the die D from the intermediate stage 31, the die D is bonded to a predetermined position on the substrate S supported by the bonding stage 46. Here, the predetermined position on the substrate S is the packaging area P of the substrate S, or the area where components are already mounted and bonded by bonding, or the bonding area of ​​components for which lamination bonding is performed. The substrate recognition camera 44 photographs the die D bonded to the substrate S, and based on the image data obtained by photographing, checks are performed to determine whether the die D is bonded to the desired position.

[0038] The die D is bonded to the bonding head 41 of the substrate S and then returned to the intermediate stage 31. Following the above sequence, the next die D is picked up from the intermediate stage 31 and bonded to the substrate S. This process is repeated, and the die D is bonded to all the packaging areas P of the substrate S.

[0039] (Substrate removal procedure: Procedure S5) The substrate S with the die D bonded is transported to the substrate removal section 70. The substrate S is removed from the transport claw 51 by the substrate removal section 70 and stored in the transport fixture. The transport fixture storing the substrate S is removed from the die bonding device 1.

[0040] As described above, die D is mounted on substrate S and removed from die bonding device 1. Then, for example, a transport fixture storing substrate S with die D mounted is transported to a wire bonding process, where the electrodes of die D are electrically connected to the electrodes of substrate S via Au metal wires or the like. Furthermore, substrate S is transported to a molding process, where die D and Au metal wires are sealed with molding resin (not shown), thereby completing semiconductor packaging.

[0041] Next, the lifting unit 13 will be described using Figures 6 and 7. Figure 6 is a top view of the lifting unit shown in Figure 2. Figure 7 is a schematic cross-section of the main part of the lifting unit shown in Figure 6.

[0042] The lifting unit 13 includes: a first unit 131; and a second unit 132 on which the first unit 131 is mounted. The second unit 132 is a common part regardless of type, and the first unit 131 is a part that can be replaced according to type.

[0043] The first unit 131 has a block portion 1311 at a cylindrical dome 1312. An opening 1313 is located at the center of the upper surface of the dome 1312, allowing the block portion 1311 to move up and down. Around the outer periphery of the opening 1313 on the upper surface of the dome 1312, there are a plurality of suction ports 1314 and a plurality of grooves 1315 connecting the plurality of suction ports 1314. Inside the suction ports 1314, when the lifting unit 13 is raised so that its upper surface contacts the back surface of the cutting strip DT, pressure is reduced using a suction mechanism (not shown). At this time, the back surface of the cutting strip DT is drawn downwards and comes into close contact with the upper surface of the dome 1312.

[0044] Block 1311 has a plurality of blocks that lift the cutting strip DT upwards. Here, block 1311 is shown as having four blocks BL1 to BL4. The innermost block BL4 is a quadrangular prism. The three outermost blocks BL1 to BL3 are quadrangular cylinders with quadrangular openings extending in the Z1-Z2 direction. Inside block BL1, block BL2, smaller than block BL1, is arranged. Furthermore, inside block BL2, block BL3, smaller than block BL2, is arranged. And inside block BL3, block BL4, smaller than block BL3, is arranged.

[0045] Of the four blocks BL1 to BL4, the outermost block BL1 has a diameter slightly smaller than the outer periphery of the grain D, which is the target of the separation. Accordingly, the corner of the outer periphery of the upper surface of block BL1 is located slightly inside the outer edge of grain D, so that the force for separating grain D and the cutting band DT can be concentrated at the starting point of the separation (the outermost periphery of grain D).

[0046] The second unit 132, which is the drive unit, has four drive shafts ND4 to ND1 that independently drive blocks BL1 to BL4 in the vertical direction. For example, drive shafts ND1 to ND4 are each configured as a motor and a piston mechanism that converts the rotation of the motor into vertical movement. The top end (upper part) of drive shafts ND4 to ND1 that are connected to blocks BL1 to BL4 is called a needle. The needles of drive shafts ND1 to ND4 are respectively called NDL1 to NDL4.

[0047] Alternatively, the number of blocks in the first unit 131 can be less than four. In this case, there are both actuators and immobilizers on the drive shafts ND1 to ND4 of the second unit 132. This will be explained using Figure 8. Figure 8 is a schematic diagram illustrating an example of the connection between the blocks and the drive shafts when the number of blocks is less than four.

[0048] When using three blocks BL1 to BL3, for example in the 3BLK type lifting unit 13 shown in Figure 8, block BL1 is driven by drive shaft ND4, block BL2 is driven by drive shaft ND3, and block BL3 is driven by drive shaft ND1. That is, drive shaft ND2 is not operated. Alternatively, block BL3 can be driven by drive shaft ND2 instead of drive shaft ND1.

[0049] When using two blocks BL1 and BL2, for example in the 2BLK type lifting unit 13 shown in Figure 8, block BL1 is driven by drive shaft ND4, and block BL2 is driven by drive shaft ND1. That is, drive shafts ND2 and ND3 are not operated. Alternatively, block BL2 can be driven by drive shaft ND3 instead of drive shaft ND1.

[0050] Each block BL1~BL4 of the lifting unit 13 can operate independently, so the lifting unit 13 can perform various actions (lifting sequences). The lifting sequence of multiple blocks consists of multiple steps.

[0051] For example, the lifting unit 13 can perform the following actions: in the first step, simultaneously lift blocks BL1 to BL4; in the second step, simultaneously lift blocks BL2 to BL4; in the third step, simultaneously lift blocks BL3 and BL4; and in the fourth step, lift block BL4. In this specification, this action is referred to as a multi-level action. The multi-level action involving four blocks is referred to as a multi-level action involving a four-level block.

[0052] Furthermore, the lifting unit 13 can perform the following actions: in the first step, it simultaneously lifts blocks BL1 to BL4; in the second step, it lowers block BL1; in the third step, it lowers block BL2; and in the fourth step, it lowers block BL3. In this specification, this action is referred to as an inverse multi-level action. The inverse multi-level action on the four blocks is referred to as the inverse multi-level action on the four-level block.

[0053] Next, the method for setting the timing diagram formula 200 that defines the action of the lifting unit 13 will be explained using FIG9. The timing diagram formula 200 constitutes part of the processing formula. FIG9 is a diagram explaining the flow of setting the timing diagram formula according to the setting screen.

[0054] The setting screen 100 includes, for example, a setting screen 101 for multi-level actions (FMS1), a setting screen 102 for inverse multi-level actions (FMS2), and a setting screen 103 for general actions (FMS3). On setting screen 103, multi-level actions and inverse multi-level actions can be set. The operator can select one setting screen from among the multiple setting screens 101, 102, and 103 using a touch panel 83b, etc. The control unit 80 displays the selected setting screen on the monitor 83a. The operator then inputs setting values ​​into the items on the setting screen. Based on the input setting values, the control unit 80 sets the jacking parameter (PARA) of the timing diagram recipe 200 (creating the timing diagram recipe 200). Furthermore, the control unit 80 can rewrite (set) the timing diagram recipe 200 in real time based on information obtained using sensors, images from a recognition camera, etc., to change the jacking action.

[0055] The control unit 80 is configured to control the drive shafts ND4-ND1 that drive blocks BL1-BL4 respectively, based on the lifting parameters set in the timing diagram recipe. The lifting parameters are set, for example, by inputting values ​​into a setting screen displayed on the monitor 83a. The lifting parameters include the lifting height, lifting speed, and timer for each of ND4-ND1.

[0056] Here, the apex height refers to the position (height) of the tops of NDL1~NDL4. Sometimes the heights of NDL1~NDL4 are referred to as NDL1_H~NDL4_H, collectively as NDL_H. When the upper ends of blocks BL1~BL4 are located on the upper surface of the rounded top 1312, NDL_H is set to 0. The heights of NDL1~NDL4 are sometimes also referred to as the heights of blocks BL4~BL1. When referred to as the heights of blocks BL4~BL1, the upper surface of the rounded top 1312 becomes the reference.

[0057] The rise speed (V) refers to the rising speed (VU) or falling speed (VD) of NDL1~NDL4 (blocks BL4~BL1).

[0058] The timer (T) refers to the time from the end of the rise or fall of NDL1~NDL4 (blocks BL4~BL1) in each step until the start of the rise or fall of NDL1~NDL4 (blocks BL4~BL1) in the next step. The timer can also be considered as the time difference (interval) used to adjust the processing time between blocks. Furthermore, the length of step 1 is the time it takes for NDL1~NDL4 (blocks BL4~BL1) to rise from the stopped state to a predetermined height. Alternatively, the length (time) of step 1 can be used as a parameter instead of the timer. In this case, the time includes the time it takes for NDL1~NDL4 (blocks BL4~BL1) to rise from the stopped state to the predetermined height, and the time it takes to maintain that height while remaining stopped.

[0059] The following is an example of the lifting parameters set in the timing diagram formula for the lifting unit 13 with four drive shafts. Here, n=1~4 and m=1~4. NDLm_H_Sn: The parameter representing the height (H) of needle m (NDLm) in step n (Sn). NDLm_VU_Sn: A parameter representing the rising speed (VU) of the needle m (NDLm) in the nth step (Sn). NDLm_VD_Sn: A parameter representing the descent and lifting speed (VD) of needle m (NDLm) in step n (Sn). NDLm_T_Sn: Parameter of the timer (T) for the needle m (NDLm) in the nth step (Sn).

[0060] [FMS1 Configuration Example] Next, the setting example and operation of the multi-stage operation setting screen 101 of the lifting unit 13 shown in FIG7 will be explained using FIG10. FIG10 is a diagram showing the setting example of the multi-stage operation setting screen for a four-stage block and the height of the block according to the case.

[0061] The operator selects the setting screen 101 by operating the touch panel 83b. The control unit 80 displays the setting screen 101 on the monitor 83a. On the setting screen 101, NDL1_H[μm] can be entered in the first setting, NDL2_H[μm] in the second setting, NDL3_H[μm] in the third setting, and NDL4_H[μm] in the fourth setting. Data cannot be entered at the "-" position. In the first to fourth settings, the lifting speed [mm / sec] and the timer [msec] can be entered.

[0062] The NDL1_H, NDL2_H, NDL3_H, and NDL4_H values ​​for each step can be set using a single data entry. On the setting screen 101, "600" was entered in the first setting for NDL1_H, "450" ​​was entered in the second setting for NDL2_H, "300" was entered in the third setting for NDL3_H, and "150" was entered in the fourth setting for NDL4_H.

[0063] The lifting speed and timer for each step can be set using common data in NDL1 to NDL4. In setting screen 101, for the first to third settings, "5" was entered for the lifting speed and "100" for the timer. In the fourth setting, "1" was entered for the lifting speed and "500" for the timer.

[0064] The following explains the setting of the lift parameter based on the value input to the setting screen 101.

[0065] (Fourth setting: Setting the first step (STEP1)) When "150" is input to NDL4_H, the control unit 80 sets "150" in NDL4_H_S1, and at the same time sets "150" to NDL1_H_S1, NDL2_H_S1 and NDL3_H_S1 with the same value as NDL4_H_S1.

[0066] When the lifting speed is input as "1", the control unit 80 sets "1" in NDL1_VU_S1, NDL2_VU_S1, NDL3_VU_S1, and NDL4_VU_S1. Furthermore, when the lifting speed is input as "1", the control unit 80 sets "1" in NDL1_VD_S1, NDL2_VD_S1, NDL3_VD_S1, and NDL4_VD_S1.

[0067] When the timer inputs "500", the control unit 80 sets "500" in NDL1_T_S1, NDL2_T_S1, NDL3_T_S1 and NDL4_T_S1.

[0068] (Third setting: Setting of the second step (STEP2)) When "300" is input in NDL3_H, the control unit 80 sets "300" in NDL3_H_S2, and simultaneously sets "300" to both NDL1_H_S2 and NDL2_H_S2, which is the same value as NDL3_H_S2. Furthermore, the control unit 80 sets "150" to NDL4_H_S2, which is the same value as the fourth setting in NDL4_H_S1.

[0069] When the lifting speed is input as "5", the control unit 80 sets "5" in NDL1_VU_S2, NDL2_VU_S2, NDL3_VU_S2, and NDL4_VU_S2. Furthermore, when the lifting speed is input as "5", the control unit 80 sets "5" in NDL1_VD_S2, NDL2_VD_S2, NDL3_VD_S2, and NDL4_VD_S2.

[0070] When the timer inputs "100", the control unit 80 sets "100" in NDL1_T_S2, NDL2_T_S2, NDL3_T_S2 and NDL4_T_S2.

[0071] (Second setting: Setting of the third step (STEP3)) When "450" ​​is input in NDL2_H, the control unit 80 sets "450" ​​in NDL2_H_S3 and simultaneously sets "450" ​​in NDL1_H_S3, which is the same value as NDL2_H_S3. Furthermore, the control unit 80 sets "300" in NDL3_H_S3, which is the same value as the third setting in NDL3_H_S2, and sets "150" in NDL4_H_S3, which is the same value as the fourth setting in NDL4_H_S1.

[0072] When the lifting speed is input as "5", the control unit 80 sets "5" in NDL1_VU_S3, NDL2_VU_S3, NDL3_VU_S3, and NDL4_VU_S3. Furthermore, when the lifting speed is input as "5", the control unit 80 sets "5" in NDL1_VD_S3, NDL2_VD_S3, NDL3_VD_S3, and NDL4_VD_S3.

[0073] When the timer inputs "100", the control unit 80 sets "100" in NDL1_T_S3, NDL2_T_S3, NDL3_T_S3 and NDL4_T_S3.

[0074] (First setting: Setting of step 4) When "600" is input in NDL1_H, the control unit 80 sets "600" in NDL1_H_S4. Furthermore, the control unit 80 sets "450" ​​in NDL2_H_S4, the same value as the second set NDL2_H_S3, in NDL3_H_S4, the same value as the third set NDL3_H_S2, in NDL3_H_S4, in NDL4_H_S4, in NDL4_H_S1, in NDL4_H_S4, in NDL4_H_S1, in NDL4_H_S1, in NDL4_H_S4, in NDL4_H_S1.

[0075] When the lifting speed is input as "5", the control unit 80 sets "5" in NDL1_VU_S4, NDL2_VU_S4, NDL3_VU_S4, and NDL4_VU_S4. Furthermore, when the lifting speed is input as "5", the control unit 80 sets "5" in NDL1_VD_S4, NDL2_VD_S4, NDL3_VD_S4, and NDL4_VD_S4.

[0076] When the timer inputs "100", the control unit 80 sets "100" in NDL1_T_S4, NDL2_T_S4, NDL3_T_S4 and NDL4_T_S4.

[0077] As described above, when setting the lifting parameters, as shown within the dashed line BLK in Figure 10, in the first step, blocks BL1~BL4 are lifted to a height of 150 [μm]. In the second step, blocks BL2~BL4 are lifted to a height of 300 [μm]. In the third step, blocks BL3 and BL4 are lifted to a height of 450 [μm]. In the fourth step, block BL4 is lifted to a height of 600 [μm].

[0078] Alternatively, the control unit 80 may be configured to display the height of blocks BL1 to BL4 in the first to fourth steps on the setting screen 101, as shown in the dashed line BLK in Figure 10, according to the set parameters.

[0079] The actions of each block set in the setting screen 101 shown in FIG10 will be explained using FIG11. FIG11 is a diagram illustrating the timing of block actions in the lift sequence under the setting values ​​shown in the setting screen of FIG10.

[0080] First, the picking operation before the operation of each block of the lifting unit 13 will be explained. The picking operation begins with positioning the target die D on the cutting tape DT between the lifting unit 13 and the clamp 22. After positioning, a vacuum is drawn through the suction port 1314 of the lifting unit 13 and the gaps between each block BL1~BL4, so that the cutting tape DT is adsorbed onto the upper surface of the lifting unit 13. At this time, the upper surfaces of blocks BL1~BL4 are at the same height as the upper surface of the dome 1312 (initial position). While supplying a vacuum from the vacuum supply source in this state, the clamp 22 is evacuated towards the device surface of the die D, and then descends and lands on the ground.

[0081] Step 1: Blocks BL1 to BL4 rise at a rate of 1 mm / sec to a height of 150 μm and then stop. After 500 msec from the end of the first step (when blocks BL1 to BL4 stop), the second step begins.

[0082] Step 2: Blocks BL2 to BL4 rise at a speed of 5 mm / sec to a height of 300 μm and then stop. After 100 msec from the end of the second step (when blocks BL2 to BL4 stop), the third step begins.

[0083] Step 3: Blocks BL3 and BL4 rise at a speed of 5 mm / sec to a height of 450 μm and then stop. After 100 msec from the end of the third step (when blocks BL3 and BL4 stop), the fourth step begins.

[0084] Step 4: Block BL4 rises to a height of 600 μm at a rate of 5 mm / sec and then stops. 100 msec elapses after the end of the fourth step (when block BL4 stops), clamp 22 begins to rise.

[0085] [FMS2 Configuration Example] Next, the setting example and operation of the setting screen for the reverse multi-stage operation of the lifting unit 13 shown in FIG7 will be explained using FIG12. FIG12 is a diagram showing the setting example for the setting screen for the reverse multi-stage operation and the height of the block according to the case.

[0086] The operator selects the setting screen 102 by operating the touch panel 83b. The control unit 80 displays the setting screen 102 on the monitor 83a. On the setting screen 102, NDL2_H [μm] can be input in the first setting, NDL3_H [μm] in the second setting, NDL4_H [μm] in the third setting, and NDL1_H [μm] in the fourth setting. In the first to fourth settings, the lifting speed [mm / sec] and the timer [msec] can be input.

[0087] The NDL1_H, NDL2_H, NDL3_H, and NDL4_H for each step can be set using a single data entry. On the setting screen 102, enter "0" in NDL2_H for the first setting, "0" in NDL3_H for the second setting, "0" in NDL4_H for the third setting, and "150" in NDL1_H for the fourth setting.

[0088] The lifting speed and timer for each step can be set using common data in NDL1 to NDL4. In setting screen 102, for the first to third settings, "5" was entered for the lifting speed and "100" for the timer. In the fourth setting, "1" was entered for the lifting speed and "500" for the timer.

[0089] The following explains the setting of the lift parameter based on the value input to the setting screen 102.

[0090] (Fourth setting: The settings of the first step) When "150" is input in NDL1_H, the control unit 80 sets "150" in NDL1_H_S1, and at the same time sets "150" with the same value as NDL1_H_S1 in NDL2_H_S1, NDL3_H_S1 and NDL4_H_S1.

[0091] When the lifting speed is input as "1", the control unit 80 sets "1" in NDL1_VU_S1, NDL2_VU_S1, NDL3_VU_S1, and NDL4_VU_S1. Furthermore, when the lifting speed is input as "1", the control unit 80 sets "1" in NDL1_VD_S1, NDL2_VD_S1, NDL3_VD_S1, and NDL4_VD_S1.

[0092] When the timer inputs "500", the control unit 80 sets "500" in NDL1_T_S1, NDL2_T_S1, NDL3_T_S1 and NDL4_T_S1.

[0093] (Third setting: Setting the second step) When "0" is input in NDL4_H, the control unit 80 sets "0" in NDL4_H_S2, and at the same time sets "150" in NDL1_H_S2, NDL2_H_S2 and NDL3_H_S2, which is the same value as the fourth setting NDL1_H_S1.

[0094] When the lifting speed is input as "5", the control unit 80 sets "5" in NDL1_VU_S2, NDL2_VU_S2, NDL3_VU_S2, and NDL4_VU_S2. Furthermore, when the lifting speed is input as "5", the control unit 80 sets "5" in NDL1_VD_S2, NDL2_VD_S2, NDL3_VD_S2, and NDL4_VD_S2.

[0095] When the timer inputs "100", the control unit 80 sets "100" in NDL1_T_S2, NDL2_T_S2, NDL3_T_S2 and NDL4_T_S2.

[0096] (Second setting: The setting of the third step) When "0" is input to NDL3_H, the control unit 80 sets NDL3_H_S3, and simultaneously sets NDL1_H_S3 and NDL2_H_S3 to the same value "150" as the fourth setting of NDL1_H_S1. Furthermore, the control unit 80 sets NDL4_H_S3 to the same value "0" as the third setting of NDL4_H_S2.

[0097] When the lifting speed is input as "5", the control unit 80 sets "5" in NDL1_VU_S3, NDL2_VU_S3, NDL3_VU_S3, and NDL4_VU_S3. Furthermore, when the lifting speed is input as "5", the control unit 80 sets "5" in NDL1_VD_S3, NDL2_VD_S3, NDL3_VD_S3, and NDL4_VD_S3.

[0098] When the timer inputs "100", the control unit 80 sets "100" in NDL1_T_S3, NDL2_T_S3, NDL3_T_S3 and NDL4_T_S3.

[0099] (First setting: The setting for the fourth step) When "0" is input in NDL2_H, the control unit 80 sets "0" in NDL2_H_S4, and simultaneously sets "150" in NDL1_H_S4, which is the same value as the fourth setting of NDL1_H_S1. Furthermore, the control unit 80 sets "0" in NDL3_T_S4, which is the same value as the second setting of NDL3_H_S3, and simultaneously sets "0" in NDL4_H_S4, which is the same value as the third setting of NDL4_H_S2.

[0100] When the lifting speed is input as "5", the control unit 80 sets "5" in NDL1_VU_S4, NDL2_VU_S4, NDL3_VU_S4, and NDL4_VU_S4. Furthermore, when the lifting speed is input as "5", the control unit 80 sets "5" in NDL1_VD_S4, NDL2_VD_S4, NDL3_VD_S4, and NDL4_VD_S4.

[0101] When the timer inputs "100", the control unit 80 sets "100" in NDL1_T_S4, NDL2_T_S4, NDL3_T_S4 and NDL4_T_S4.

[0102] As described above, when setting the jacking parameters, as shown within the dashed line BLK in Figure 12, in the first step, blocks BL1 to BL4 are jacked up to a height of 150 [μm]. In the second step, block BL1 is lowered to a height of 0 [μm]. In the third step, block BL2 is lowered to a height of 0 [μm]. In the fourth step, block BL3 is lowered to a height of 0 [μm].

[0103] Alternatively, the control unit 80 can also be configured to display the height of blocks BL1 to BL4 in the first to fourth steps on the setting screen 102, as shown in the dashed line BLK in Figure 12, according to the set parameters.

[0104] The action of the block set in the setting screen 102 shown in FIG12 will be explained using FIG13. FIG13 is a diagram illustrating the timing of the block action in the lift sequence under the setting values ​​shown in the setting screen of FIG12.

[0105] Step 1: Blocks BL1 to BL4 rise at a rate of 1 mm / sec to a height of 150 μm and then stop. After 500 msec from the end of the first step (when blocks BL1 to BL4 stop), the second step begins.

[0106] Step 2: Block BL1 descends to a height of 0 μm at a rate of 5 mm / sec and then stops. After 100 msec from the end of the second step (when block BL1 stops), the third step begins.

[0107] Step 3: Block BL2 descends to a height of 0 μm at a rate of 5 mm / sec and then stops. After 100 msec from the end of the third step (when block BL2 stops), the fourth step begins.

[0108] Step 4: Block BL3 descends to a height of 0 μm at a speed of 5 mm / sec and then stops. 100 msec elapses after the end of the fourth step (when block BL3 stops), clamp 22 begins to rise.

[0109] [Example of FMS2's third-order block configuration] The setting example and operation of the setting screen 102 for the reverse multi-stage operation of the 3BLK type lifting unit 13 shown in Figure 8 will be explained using Figure 14. Figure 14 is a diagram showing the setting example for the setting screen of the reverse multi-stage operation in the three-stage block and the height of the block according to the case.

[0110] In the 3BLK type lifting unit 13, NDL2 is not used. Therefore, the operator inputs "150" in the first setting NDL2_H, which is the same value as in the fourth setting NDL1_H, inputs "5" for the lifting speed, and inputs "0" for the timer. Here, in the second to fourth settings, the same values ​​as those shown in the setting screen 102 of FIG12 are input. According to the second to fourth settings, except for the parameters related to NDL2, the control unit 80 sets the same lifting parameters as the lifting unit of the reverse multi-stage operation shown in FIG12.

[0111] The setting of the boost parameter based on the value input to the setting screen 102 will be explained below. In addition, NDL2_H in the first setting is the same value as NDL1_H in the fourth setting, and the timer in the first setting is "0", indicating that NDL2 is not used. The control unit 80 sets the parameter related to NDL2 to "0".

[0112] [Example of FMS2 second-order block configuration] The setting example and operation of the setting screen for the reverse multi-stage operation of the 2BLK type lifting unit 13 will be explained using Figure 15. Figure 15 is a diagram showing the setting example for the setting screen of the reverse multi-stage operation in the second-order block and the height of the block according to the case.

[0113] In the 2BLK type lifting unit 13, NDL2 and NDL3 are not used. Therefore, the operator inputs "150", the same value as NDL2_H in the first setting and NDL1_H in the fourth setting, inputs "5" for the lifting speed, and inputs "0" for the timer. In the second setting, the operator inputs "150", the same value as NDL1_H in the fourth setting, inputs "5" for the lifting speed, and inputs "0" for the timer. Here, in the third and fourth settings, the same values ​​as those shown on the setting screen in FIG12 are input. According to the third and fourth settings, except for the parameters related to NDL2 and NDL3, the control unit 80 sets the same lifting parameters as the lifting unit of the reverse multi-stage operation shown in FIG12.

[0114] The setting of the boost parameters based on the values ​​input to the setting screen 102 will be explained below. Furthermore, if NDL2_H in the first setting is the same value as NDL1_H in the fourth setting, and the timer in the first setting is "0", indicating that NDL2 is not used, the control unit 80 sets the parameters related to NDL2 to "0". Similarly, if NDL3_H in the second setting is the same value as NDL1_H in the fourth setting, and the timer in the second setting is "0", indicating that NDL3 is not used, the control unit 80 sets the parameters related to NDL3 to "0".

[0115] [Other configuration examples for fourth-order blocks in FMS2] Figure 16 will be used to explain other settings and actions of the setting screen 102 for the reverse multi-stage action of the lifting unit 13 shown in Figure 7. Figure 16 is a diagram showing other settings for the setting screen for the reverse multi-stage action in the fourth-order block and the height of the block according to the case.

[0116] The settings screen 102 shown in Figure 16 allows for the input of NDL4_H[μm] in the fourth setting of the settings screen 102 shown in Figure 12, using the option settings.

[0117] The inputs for the lifting speed and timer are the same as those shown on the setting screen 102 in Figure 12. The inputs for NDL1_H to NDL4_H in the first to third settings are the same as those shown on the setting screen 102 in Figure 12. In the fourth setting, "150" was entered for NDL1_H and "75" was entered for NDL4_H. In the fourth setting, "1" was entered for the lifting speed and "500" was entered for the timer.

[0118] The settings for the lift parameters based on the values ​​entered in the first to third settings on the setting screen 102 are the same as those in Figure 12. The parameter settings based on the fourth setting will be explained below.

[0119] (Fourth setting: The settings of the first step) When "150" is input to NDL1_H, "150" is set in NDL1_H_S1, and the same value "150" is set in NDL2_H2_S1 and NDL3_H_S1. When "75" is input to NDL4_H, the control unit 80 sets "75" in NDL4_H_S1.

[0120] When the lifting speed is input as "1", the control unit 80 sets "1" in NDL1_VU_S1, NDL2_VU_S1, NDL3_VU_S1, and NDL4_VU_S1. Furthermore, when the lifting speed is input as "1", the control unit 80 sets "1" in NDL1_VD_S1, NDL2_VD_S1, NDL3_VD_S1, and NDL4_VD_S1.

[0121] When the timer inputs "500", the control unit 80 sets "500" in NDL1_T_S1, NDL2_T_S1, NDL3_T_S1 and NDL4_T_S1.

[0122] As described above, when setting the lifting parameters, as shown within the dashed line BLK in Figure 16, in the first step, blocks BL1~BL3 are lifted to a height of 150 [μm], and the fourth block BL4 is lifted to a height of 75 [μm]. The first to third settings are the same as those shown in the setting screen 102 in Figure 12, therefore the second to fourth steps are performed in the same way as those shown in the setting screen 102 in Figure 12.

[0123] Alternatively, the control unit 80 can also be configured to display the height of blocks BL1 to BL4 in the first to fourth steps on the setting screen 102, as shown in the dashed line BLK in Figure 16, according to the set parameters.

[0124] [FMS3 configuration example] Next, the setting example and operation of the setting screen for the general operation of the lifting unit 13 shown in FIG7 will be explained using FIG17. FIG17 is a diagram showing the setting example of the setting screen for the general operation of the fourth-order block and the height of the block according to the case.

[0125] The operator selects the setting screen 103 by operating the touch panel 83b. The control unit 80 displays the setting screen 103 on the monitor 83a. On the setting screen 103, NDL1_H[μm], NDL2_H[μm], NDL3_H[μm], NDL4_H[μm], lifting speed [mm / sec], and lifting speed (descent) [mm / sec] can be entered step by step. In addition, NDL1_T[msec], NDL2_T[msec], NDL3_T[msec], and NDL4_T[msec] can be entered step by step. The rising lifting speed (VU) and the falling lifting speed (VD) are set to common values ​​for NDL1 to NDL4.

[0126] Setting screen 103 differs from setting screens 101 and 102 in that it requires input to be set for all items in each step. The lifting parameters set using the input of setting screen 103 shown in FIG17 are the same as the lifting parameters set using the input of setting screen 102 shown in FIG12.

[0127] [Other FMS3 configuration examples] Figure 18 will be used to explain other settings and actions of the setting screen 103 for the reverse multi-stage action of the lifting unit 13 shown in Figure 7. Figure 18 is a diagram showing other settings for the setting screen for the reverse multi-stage action of the fourth-level block and the height of the block according to the case.

[0128] In the first setting, "300" was entered in NDL1_H, and "0" was entered in NDL2_H to NDL4_H. "5" was entered in the rising jacking speed (VU), and "5" was entered in the descending jacking speed (VD). "100" was entered in NDL1_T to NDL4_T. In the second setting, "300" was entered in NDL1_H to NDL4_H. "5" was entered in VU, and "5" was entered in VD. "160" was entered in NDL1_T, "160" in NDL2_T, "130" in NDL3_T, and "100" in NDL4_T.

[0129] The following explains the setting of the lift parameter based on the value input to the setting screen 103.

[0130] (Second setting: The settings of the first step) When "300" is input in NDL1_H to NDL4_H, the control unit 80 sets "300" in NDL1_H_S1, NDL2_H_S1, NDL3_H_S1 and NDL4_H_S1.

[0131] When "5" is input in VU, the control unit 80 sets "5" in NDL1_VU_S1, NDL2_VU_S1, NDL3_VU_S1, and NDL4_VU_S1. Similarly, when "5" is input in VD, the control unit 80 sets "5" in NDL1_VD_S1, NDL2_VD_S1, NDL3_VD_S1, and NDL4_VD_S1.

[0132] When "160" is input in NDL1_T, "160" is input in NDL2_T, "130" is input in NDL3_T, and "100" is input in NDL4_T, the control unit 80 sets "160" in NDL1_T_S1, sets "160" in NDL2_T_S1, sets "130" in NDL3_T_S1, and sets "100" in NDL4_T_S1.

[0133] (First setting: Second step setting) When "300" is input in NDL1_H, the control unit 80 sets "300" in NDL1_H_S2. When "0" is input in NDL2_H to NDL4_H, the control unit 80 sets "0" in NDL2_H_S2, NDL3_H_S2 and NDL4_H_S2.

[0134] When "5" is input into VU, the control unit 80 sets "5" in NDL1_VU_S2, NDL2_VU_S2, NDL3_VU_S2, and NDL4_VU_S2. Furthermore, when "5" is input into VD, the control unit 80 sets "5" in NDL1_VD_S2, NDL2_VD_S2, NDL3_VD_S2, and NDL4_VD_S2.

[0135] When "100" is input in NDL1_T, "100" is input in NDL2_T, "100" is input in NDL3_T, and "100" is input in NDL4_T, the control unit 80 sets "100" in NDL1_T_S2, NDL2_T_S2, NDL3_T_S2, and NDL4_T_S2, respectively.

[0136] As described above, when setting the lifting parameters, as shown within the dashed line BLK in Figure 18, in the first step, blocks BL1 to BL4 are lifted up to a height of 300 [μm]. In the second step, they are lowered in the order of blocks BL1, BL2, and BL3.

[0137] Alternatively, the control unit 80 can be configured to display the height of blocks BL1 to BL4 in the first to fourth steps on the setting screen 103, as shown in the dashed line BLK in Figure 18, according to the set parameters.

[0138] The actions of the blocks set in the setting screen 103 shown in FIG18 will be explained using FIG19. FIG19 is a diagram illustrating the timing of block actions in the lift sequence under the setting values ​​shown in the setting screen of FIG18.

[0139] Step 1: Blocks BL1 through BL4 rise at a speed of 5 mm / sec to a height of 300 μm and then stop. 100 msec elapse after block BL1 stops (end of the first step) before proceeding to the second step. 130 msec elapse after block BL2 stops (end of the first step) before proceeding to the second step. 160 msec elapse after block BL3 stops (end of the first step) before proceeding to the second step. 160 msec elapse after block BL4 stops (end of the first step) before proceeding to the second step.

[0140] Step 2: Block BL1 descends at a rate of 5 mm / sec to a height of 0 μm and then stops. Block BL2 descends at a rate of 5 mm / sec to a height of 0 μm and then stops. Block BL3 descends at a rate of 5 mm / sec to a height of 0 μm and then stops. Block BL4 maintains a height of 300 μm.

[0141] The point at which the second step ends (the slowest block among blocks BL1~BL3 stops) becomes the starting point for the first setting (second step) from NDL1_T to NDL4_T. 100ms elapse after the end of the second step, clamp 22 begins to rise.

[0142] When implemented according to this method, at least one of the following effects is achieved.

[0143] (a) By using one input item in the settings menu, multiple jacking parameters can be set. This reduces the amount of input required.

[0144] (b) The parameters of all blocks or steps can be set using one input of a block or step. This reduces input time and errors.

[0145] (c) Input items can be limited by using a setting screen for setting a specific jacking sequence.

[0146] (d) Using the above (c), it becomes easier to expand the parameters from the input setting value.

[0147] (e) By utilizing (c) above, the input time can be reduced.

[0148] The disclosure made by the present discloser has been specifically described above according to the embodiments, but the present disclosure is not limited to the above embodiments, and various modifications are self-evident.

[0149] In the implementation method, although an example of four drive shafts is given, there may be fewer or more than four.

[0150] In the implementation method, although the example of lifting by blocks is described, it can also be used as a reference.

[0151] In the embodiments described, an example of using a die-attach film was given, but it is also possible to use a die-attach film in the pre-formed part where the adhesive is coated on the substrate.

[0152] In one embodiment, a die bonding apparatus is described that picks up a die from a wafer supply unit using a pick-up head and places it on an intermediate stage, and then bonds the die placed on the intermediate stage to a substrate using a bonding head. However, this is not a limitation; a die bonding apparatus that picks up a die from a wafer supply unit can also be applied.

[0153] For example, it can also be applied to die bonding devices that bond the wafer supply unit's die to the substrate with a bonding head without an intermediate stage or pick-up head.

[0154] In addition, it can also be applied to flip chip bonders that pick up dies from the wafer supply section without an intermediate stage, rotate the die pick-up head upward to transfer the die to the bonding head, and then bond the die to the substrate.

[0155] In this embodiment, although a die bonding device is described as an example, it can also be applied to a semiconductor manufacturing apparatus that places the picked-up die onto a tray.

[0156] 1: Die bonding equipment (semiconductor manufacturing equipment) 13: Lifting Unit BL1~BL4: Blocks 80: Control Department 83a: Monitor (Display Device)

Claims

1. A semiconductor manufacturing apparatus, comprising: a lifting unit having a plurality of blocks, each of the plurality of blocks being independently operable up and down; and a display device, wherein... The display device, which consists of a plurality of steps in which the lifting sequence of the plurality of blocks is constructed, displays a setting screen in which the height of the plurality of blocks can be input step by step; and a control unit, which is configured to set a plurality of lifting parameters by means of one input item in the setting screen, and to control the operation of the plurality of blocks according to the set plurality of lifting parameters.

2. The semiconductor manufacturing apparatus as claimed in claim 1, wherein, The aforementioned display device is configured to display a setting screen for inputting a first lifting sequence and a setting screen for inputting a second lifting sequence. The first lifting sequence is a multi-stage sequence of actions in which all the aforementioned blocks are lifted to a predetermined height and the innermost of the aforementioned blocks are lifted sequentially. The second lifting sequence is a reverse multi-stage sequence of actions in which all the aforementioned blocks are lifted to a predetermined height and the outermost of the aforementioned blocks are lowered sequentially.

3. The semiconductor manufacturing apparatus as claimed in claim 2, wherein, In the aforementioned setting screen for inputting the first lifting sequence, the height of the outermost block can be input in the input area of ​​the first step, and the height of the inner block adjacent to the outermost block can be input in the input area of ​​the second step.

4. The semiconductor manufacturing apparatus as claimed in claim 2, wherein, The aforementioned setting screen for inputting the aforementioned second lifting sequence is configured such that the height of the innermost block can be input in the input area of ​​the first step, and the height of the outermost block can be input in the input area of ​​the second step.

5. The semiconductor manufacturing apparatus as claimed in claim 2, wherein, The aforementioned display device is configured to display a setting screen that allows input of the aforementioned first lifting sequence and the aforementioned second lifting sequence.

6. A semiconductor manufacturing apparatus as described in any one of claims 1 to 4, wherein, The aforementioned control unit is configured to set the aforementioned lifting parameters for the height of all the aforementioned blocks in each step based on the input of the height of one of the aforementioned blocks in each step of the aforementioned setting screen.

7. A semiconductor manufacturing apparatus as described in any one of claims 1 to 5, wherein, The aforementioned setup screen is configured to allow users to input the lifting speed of the aforementioned plurality of blocks step by step.

8. A semiconductor manufacturing apparatus as described in any one of claims 1 to 5, wherein, The aforementioned setting screen is configured to be input according to a timer step, which is the time from the end of the rise or fall of the aforementioned plurality of blocks to the start of the rise or fall of the aforementioned plurality of blocks before the next step.

9. The semiconductor manufacturing apparatus as claimed in claim 4, wherein, The aforementioned setup screen is configured such that the height of the outermost block can be further input in the input area of ​​the first step.

10. A lifting method in a semiconductor manufacturing apparatus, the semiconductor manufacturing apparatus comprising: a lifting unit having a plurality of blocks, each of the plurality of blocks being independently operable up and down; and a display device, wherein... The lifting sequence of the aforementioned plurality of blocks is configured in a plurality of steps. The display device displays a setting screen on which the height of the aforementioned plurality of blocks can be input step by step. The lifting method includes: a program for setting a plurality of lifting parameters based on an input from a setting item on the aforementioned setting screen; and a program for controlling the operation of the aforementioned plurality of blocks based on the set parameters.

11. A method for manufacturing a semiconductor device, comprising: a process of peeling a die from a wafer held by a wafer ring using a lift-up method as described in claim 10, while simultaneously picking up the die; and a process of bonding the picked-up die to a substrate.

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