Light sensor

The photodetector addresses efficiency limitations in mid- and far-infrared bands by using a junctionless, self-powered absorption layer with high electron mobility, achieving efficient infrared detection without cooling or bias, and enhancing detection rates and resolution.

TWI932247BActive Publication Date: 2026-07-11NAT TAIWAN UNIV OF SCI & TECH
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Patent Information

Application Number
TW114119275
Authority / Receiving Office
TW · TW
Patent Type
Patents
Current Assignee / Owner
Filing Date
2025-05-22
Publication Date
2026-07-11
Estimated Expiration
2045-05-21

AI Technical Summary

Technical Problem

High-efficiency photodetectors using semiconductor PN junction diodes or metal-semiconductor Schottky junction diodes are limited by carrier concentration and dark current in mid- and far-infrared light bands under uncooled conditions, hindering sensor efficiency improvements.

Method used

A photodetector with a junctionless, self-powered absorption layer utilizing a material with high electron mobility and low hole mobility, generating photocurrent through the difference in electron and hole mobility, and featuring a perimeter-to-area ratio greater than 100 mm⁻¹ for the upper electrode layer, allowing operation without cooling or external bias.

Benefits of technology

Enables high-detection-rate optical detection and high-resolution image detection in the infrared wavelength range with a high signal-to-noise ratio under uncooled conditions.

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Abstract

A photodetector includes a lower electrode layer, an absorption layer, and an upper electrode layer. The absorption layer is located on the lower electrode layer and is made of a single material without homogeneous or heterogeneous interfaces. The upper electrode layer is located on the upper surface of the absorption layer, wherein the ratio of the perimeter of the upper electrode layer to the area of ​​the upper surface of the absorption layer is greater than 100 mm⁻¹. The absorption layer is configured to generate photocurrent and voltage around the upper electrode layer and near the interface with the upper surface of the absorption layer by utilizing the large difference between electron mobility and hole mobility.
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