Substrate processing apparatus

Abstract

This invention discloses a substrate processing apparatus. The substrate processing apparatus includes a control module, a material supply module, a drilling module, and a material removal module. The material supply module is electrically connected to the control module and is used to form a protective layer on the substrate. The drilling module is electrically connected to the control module and is used to drill holes in the substrate. The material removal module is electrically connected to the control module and is used to remove the protective layer on the substrate by means of light.

Description

Technical Field

[0001] This invention is a division of Taiwan Patent Application No. 113144177 (filed on November 18, 2024), the full contents of which are incorporated in the patent specification of this invention for reference.

[0002] This invention relates to a substrate processing apparatus, and more particularly to a substrate drilling apparatus. Prior Technology

[0003] Glass materials are frequently used in electronic products such as optical components, microelectronics, microfluidics, and displays. With the miniaturization of electronic products, the precision requirements for glass material processing are also increasing. Furthermore, problems such as cracking and reduced structural strength often occur during glass material processing. Although existing technologies incorporate reinforcing layers on glass substrates to increase their hardness, this increases the overall thickness of the substrate, which is detrimental to product miniaturization.

[0004] Therefore, how to overcome the above-mentioned defects through structural design improvements has become one of the important issues that this project aims to address. Summary of the Invention

[0005] To solve the above-mentioned technical problems, one of the technical solutions adopted by the present invention is to provide a substrate processing apparatus, the substrate processing apparatus comprising: a control module; a material supply module electrically connected to the control module for forming a protective layer on the substrate; a drilling module electrically connected to the control module for drilling holes in the substrate; and a material removal module electrically connected to the control module for removing the protective layer on the substrate by means of light.

[0006] In one embodiment, the protective layer is a water film, ceramic, metal, alloy, or plastic formed by chemical vapor deposition, physical vapor deposition, evaporation, sputtering, coating, or spraying; wherein the thickness of the protective layer is from 100 nm to 5000 nm.

[0007] In one embodiment, the drilling module includes: a processing laser generating module for providing a processing laser beam; a processing laser beam expander for expanding a laser spot of the processing laser beam to generate an expanded laser beam; an X-axis laser galvanometer scanning module for reflecting the expanded laser beam according to a plurality of X-axis rotation angles of the X-axis laser galvanometer scanning module; a Y-axis laser galvanometer scanning module for receiving the expanded laser beam reflected from the X-axis laser galvanometer scanning module and reflecting the expanded laser beam according to a plurality of Y-axis rotation angles of the Y-axis laser galvanometer scanning module; and a condenser lens for focusing the expanded laser beam into a focused laser beam having a predetermined aspect ratio, so as to project the focused laser beam onto one or more drill holes of the substrate; wherein the pulse width of the processing laser beam is between 50 and 500. Between fs, the repetition frequency of the processing laser beam is between 0.5 and 10 GHz, and the pulse energy of the processing laser beam is between 100 and 1000 μJ. The processing laser generating unit, the processing laser beam expander, the condenser lens, and the substrate are arranged in the same optical path. The control device controls the processing parameters of the processing laser beam according to the supply quantity, supply position, protective liquid type, and protective layer thickness of the material supply module.

[0008] In one embodiment, the material removal module includes a removal light emitting unit for emitting a removal beam toward the substrate. The pulse width of the removal beam is between 300 fs and 100,000 fs, the repetition frequency of the removal beam is between 0.1 kHz and 2000 kHz, and the pulse energy of the removal beam is between 0.1 μJ and 1000 μJ. The control device controls the removal parameters of the removal beam according to the supply amount, supply position, type of protective liquid, and thickness of the protective layer of the material supply module.

[0009] In one embodiment, the material removal module generates a linear laser or a planar laser using at least one optical element; wherein the substrate comprises aluminosilicate, aluminobosilicate, soda lime, borosilicate, or silica.

[0010] In one embodiment, the substrate processing apparatus further includes a monitoring module electrically connected to the control module for monitoring the drilling status of the substrate. The monitoring module includes a light emitting unit, a light receiving unit, and an imaging device. The light emitting unit emits a monitoring beam toward the substrate, and the light receiving unit receives a reflected light from the monitoring beam reflected by the substrate. The imaging device converts the signal of the reflected light and generates a detection pattern.

[0011] In one embodiment, the substrate processing apparatus further includes an artificial intelligence module, the artificial intelligence module comprising: a database unit having relevant data of the substrate, wherein the database unit is connected to a cloud platform via the Internet to update the relevant data; a learning and training unit connected to the database unit, the learning and training unit using a deep learning algorithm to learn and pre-train based on the relevant data in the database unit; a parameter optimization setting unit connected to the database unit to optimize the setting of drilling parameters based on the relevant data of the substrate; and a monitoring module setting unit connected to the database unit to select a suitable monitoring module based on the relevant data of the substrate.

[0012] In one embodiment, the substrate processing apparatus further includes a cleaning module, the cleaning module including a gas source and a gas nozzle, the gas nozzle being connected to the gas source to supply a cleaning substance to the substrate for removing impurities on the substrate.

[0013] To solve the above-mentioned technical problems, another technical solution adopted by the present invention is to provide a substrate processing method, the substrate processing method comprising: S1: forming a protective layer on a substrate through a material supply module; S2: drilling holes in the substrate through a drilling module; and S3: removing the protective layer on the substrate through a material removal module.

[0014] To solve the above-mentioned technical problems, another technical solution adopted by the present invention is to provide a processing substrate, which is made by the aforementioned substrate processing method.

[0015] One of the beneficial effects of the present invention is that the substrate processing apparatus, method and processing substrate provided by the present invention can protect the substrate from any fragments and cracks generated during the processing by means of the technical solutions of "a material supply module electrically connected to the control module for forming a protective layer on the substrate" and "a material removal module electrically connected to the control module for removing the protective layer on the substrate by means of light".

[0016] To further understand the features and technical content of the present invention, please refer to the following detailed description and drawings of the present invention. However, the drawings provided are for reference and illustration only and are not intended to limit the present invention. Simple Explanation of the Diagram

[0017] Figure 1 is a flowchart of the substrate processing method of the present invention.

[0018] Figure 2 is a functional block diagram of the substrate processing apparatus of the present invention.

[0019] Figure 3 is a schematic diagram of step S1 of the substrate processing method of the present invention.

[0020] Figure 4 is a schematic diagram of step S2 of the substrate processing method of the present invention.

[0021] Figure 5 is a schematic diagram of step S3 of the substrate processing method of the present invention.

[0022] Figure 6 is a schematic diagram of the drilling module of the substrate processing apparatus of the present invention.

[0023] Figure 7 is a schematic diagram of the structure of multiple pulse trains of a laser beam.

[0024] Figure 8 is a schematic diagram of the monitoring module of the substrate processing apparatus of the present invention.

[0025] Figure 9 is a functional block diagram of the substrate processing apparatus of the present invention, which includes an artificial intelligence module.

[0026] Figure 10 is a schematic diagram of the cleaning module of the substrate processing apparatus of the present invention. Implementation

[0027] The following specific embodiments illustrate the implementation of the "substrate processing apparatus, method, and processed substrate" disclosed in this invention. Those skilled in the art can understand the advantages and effects of this invention from the content disclosed in this specification. This invention can be implemented or applied through other different specific embodiments, and various details in this specification can also be modified and changed based on different viewpoints and applications without departing from the concept of this invention. Furthermore, the accompanying drawings of this invention are for simple illustrative purposes only and are not depictions of actual dimensions; this is stated in advance. The following embodiments will further describe the relevant technical content of this invention in detail, but the disclosed content is not intended to limit the scope of protection of this invention.

[0028] It should be understood that while terms such as "first," "second," and "third" may be used in this document to describe various components or signals, these components or signals should not be limited by these terms. These terms are primarily used to distinguish one component from another, or one signal from another. Furthermore, the term "or" as used herein should, as appropriate, include any combination of one or more of the associated listed items.

[0029] Referring to Figures 1 to 5, a first embodiment of the present invention provides a substrate processing apparatus, which includes a control module 10, a material supply module 20, a drilling module 30, and a material removal module 40. As shown in Figure 2, the material supply module 20, the drilling module 30, and the material removal module 40 are all electrically connected to the control module 10, so that the control module 10 controls the operation of the material supply module 20, the drilling module 30, and the material removal module 40.

[0030] Furthermore, the substrate processing apparatus of the present invention can be used to perform a substrate processing method including at least steps S1 to S3. As shown in Figures 1 and 3, step S1 involves forming a protective layer on the substrate S through the material supply module 20. In the present invention, the substrate S can be a glass substrate, i.e., the substrate S of the present invention can include aluminum silicate, aluminum borosilicate, soda lime, borosilicate, or silica. Furthermore, the substrate S can have a flat shape such as circular, elliptical, triangular, or polygonal. In step S1, the substrate S can be placed on a support platform to spray a protective layer onto the substrate S. In one embodiment, the substrate S can also be fixed with a clamp before spraying. The substrate S can be fixed using a single clamp, a pair of clamps to fix both sides of the substrate S, or the perimeter of the substrate S.

[0031] Specifically, the material supply module 20 can form a first protective layer A1 on one side of the substrate S and a second protective layer A2 on the other side of the substrate S. However, in one embodiment, only one of the first protective layer A1 or the second protective layer A2 may be formed. When the substrate S is placed on the support platform, the material supply module 20 can movably form the first protective layer A1 and / or the second protective layer A2 on the surface of the substrate S. When the substrate S is fixed by a clamp, the clamp can be used to flip the substrate S to form the first protective layer A1 and / or the second protective layer A2 on different surfaces of the substrate S.

[0032] For example, the protective layer of the present invention can be formed by chemical vapor deposition, physical vapor deposition, evaporation, sputtering, coating, or spraying. The materials of the first protective layer A1 and the second protective layer A2 can each be independently a water film, ceramic, metal, alloy, or plastic. In one embodiment, a water film can be formed on the surface of the substrate S by spraying water onto the surface of the substrate S. In another embodiment, a metal film layer, such as an AlNdN thin film, can be formed on the surface of the substrate S by sputtering in an argon atmosphere, wherein the thickness of the protective layer is 100 nm to 5000 nm (e.g., any positive integer between 100 nm and 5000 nm). However, the examples given above are merely one possible embodiment and are not intended to limit the present invention.

[0033] As shown in Figures 1, 4, and 6, step S2 involves drilling a hole in the substrate S through the drilling module 30. The drilling module 30 may include a processing laser generating module 301, a processing laser beam expander 302, an X-axis laser galvanometer scanning module 303, an X-axis laser galvanometer controller 304, a Y-axis laser galvanometer scanning module 305, a Y-axis laser galvanometer controller 306, and a condenser lens 307. In one embodiment of the present invention, the processing laser generating module 301, the processing laser beam expander 302, the X-axis laser galvanometer scanning module 303, the Y-axis laser galvanometer scanning module 305, the condenser lens 307, and the substrate S are arranged in the same optical path.

[0034] The processing laser generation module 301 is used to generate a processing laser beam L1, wherein the pulse width of the processing laser beam L1 (i.e., the pulse width of the pulse signals P1-Pn) is between 50 and 500 fs (e.g., any positive integer between 50 and 500 fs), the repetition frequency of the processing laser beam L1 (i.e., the repetition frequency of the pulse train laser light) is between 0.5 and 10 GHz (e.g., any positive integer between 0.5 and 10 GHz), the average power of the processing laser beam L1 is determined based on the pulse energy and the repetition frequency, the repetition frequency of the pulse train laser light is between 0.5 and 10 GHz (e.g., any positive integer between 0.5 and 10 GHz), and the pulse energy of the processing laser beam L1 is between 100 and 1000 μJ (e.g., any positive integer between 10 and 30 mJ). It is worth mentioning that the substrate processing apparatus of the present invention can use the control device 10 to control the processing parameters of the laser beam based on the supply quantity, supply position, type of protective liquid and thickness of the protective layer of the material supply module 20.

[0035] Please refer to Figure 7, which illustrates the structure of multiple pulse trains B1-Bn for processing the laser beam L1. As shown in Figure 7, these pulse trains B1-Bn include multiple pulse signals P1-Pn. That is, multiple pulse signals P1 form pulse train B1, multiple pulse signals P2 form pulse train B2, ..., multiple pulse signals Pn form pulse train Bn, so that these pulse trains B1-Bn respectively form multiple pulse signals P1-Pn. The pulse width of these pulse signals P1-Pn is between 50 and 500 fs (e.g., any positive integer between 50 and 500 fs), the number of these pulse signals P1-Pn is between 50 and 1000 (e.g., any positive integer between 50 and 1000), and the frequency of these pulse signals P1-Pn is between 1 and 2000 kHz (e.g., any positive integer between 1 and 2000 kHz), but the present invention is not limited to these.

[0036] It is worth noting that the pulse width, pulse energy, frequency of pulse signals P1-Pn, repetition frequency, and number of pulse signals P1-Pn of the processing laser beam L1 can be appropriately adjusted according to individual needs. For example, if the pulse energy of the processing laser beam L1 used when drilling or welding composite materials is high, the repetition frequency of the processing laser beam L1 can be adjusted to a lower frequency. However, the examples given above are merely one possible embodiment and are not intended to limit the invention.

[0037] Furthermore, it is worth noting that if the pulse width, pulse energy, frequency, repetition frequency, and number of pulse signals P1-Pn of the processing laser beam L1 used when drilling or welding composite materials are below the aforementioned predetermined ranges, the laser beam will have difficulty drilling or welding the composite materials. Conversely, if the pulse width, pulse energy, frequency, repetition frequency, and number of pulse signals P1-Pn of the processing laser beam L1 used when drilling or welding composite materials exceed the aforementioned predetermined ranges, cracks are likely to occur at the drilled holes in the composite materials. For example, if the pulse width of the processing laser beam L1 used when drilling or welding composite materials is 600 fs, cracks are likely to occur at the drilled holes in the composite materials. However, the examples given above are merely one possible embodiment and are not intended to limit the invention.

[0038] The processing laser beam expander 302 is adjacent to the processing laser generating module 301 and is used to expand a laser spot of the processing laser beam L1 to generate an expanded laser beam L2. The X-axis laser galvanometer scanning module 303 is adjacent to the processing laser beam expander 302 and is used to reflect the expanded laser beam L2 according to multiple X-axis rotation angles (e.g., 0°, 30°, 60°, ...) (not shown) of the X-axis laser galvanometer scanning module 303. That is, the X-axis laser galvanometer scanning module 303 rotates to generate multiple rotation angles in the X-axis direction, so that the X-axis laser galvanometer scanning module 303 expands the laser beam L2 by mirror reflection at different angles.

[0039] The X-axis laser galvanometer controller 304 is coupled to the X-axis laser galvanometer scanning module 303 and is used to control the rotation angles of the X-axis laser galvanometer scanning module 303 in certain X-axis directions. For example, the X-axis laser galvanometer controller 304 can drive the X-axis laser galvanometer scanning module 303 to rotate according to control commands, so that the X-axis laser galvanometer scanning module 303 generates multiple rotation angles in a specific X-axis direction.

[0040] The Y-axis laser galvanometer scanning module 305 is located adjacent to the X-axis laser galvanometer scanning module 303 and is used to receive the amplified laser beam L2 reflected from the X-axis laser galvanometer scanning module 303. The amplified laser beam L2 is reflected according to multiple Y-axis rotation angles of the Y-axis laser galvanometer scanning module 305. That is, the Y-axis laser galvanometer scanning module 305 rotates to generate multiple rotation angles in the Y-axis direction, causing the Y-axis laser galvanometer scanning module 305 to reflect the amplified laser beam L2 at different angles. The Y-axis laser galvanometer controller 306 is coupled to the Y-axis laser galvanometer scanning module 305 and is used to control these Y-axis rotation angles of the Y-axis laser galvanometer scanning module 305. For example, the Y-axis laser galvanometer controller 306 can drive the Y-axis laser galvanometer scanning module 305 to rotate according to control commands, so that the Y-axis laser galvanometer scanning module 305 generates multiple rotation angles in a specific Y-axis direction.

[0041] A condenser lens 307 is located adjacent to the Y-axis laser galvanometer scanning module 305 and is used to focus the amplified laser beam L2 reflected from the Y-axis laser galvanometer scanning module 305 into a focused laser beam L3 with a predetermined high aspect ratio. This focused laser beam L3 is then projected onto one or more drilled holes in the substrate S to form drilled holes B. Specifically, the projection path of the focused laser beam L3 can be adjusted by the X-axis laser galvanometer scanning module 303 and the Y-axis laser galvanometer scanning module 305, causing the focused laser beam L3 projected onto one or more drilled holes in the substrate S to be deflected at a deflection velocity V.

[0042] As shown in Figures 1 and 5, step S3 involves removing the protective layer on the substrate S using the material removal module 40. The material removal module 40 includes at least a removal light emitting unit for emitting a removal beam. Specifically, the material removal module 40 can use the removal beam to remove the first protective layer A1 and / or the second protective layer A2. The pulse width of the removal beam is between 300 fs and 100,000 fs (e.g., any positive integer between 300 fs and 100,000 fs), the repetition frequency of the removal beam is between 0.1 kHz and 2000 kHz (e.g., any positive integer between 0.1 kHz and 2000 kHz), and the pulse energy of the removal beam is between 0.1 μJ and 1000 μJ (e.g., any positive integer between 0.1 μJ and 1000 μJ). It is worth noting that the substrate processing apparatus of the present invention can use the control module 10 to control the removal parameters of the removal beam according to the supply amount, supply position, type of protective liquid, and thickness of the protective layer from the material supply module 20. In one embodiment of the present invention, the material removal module 40 may generate a linear laser or a surface laser using at least one optical element to increase removal efficiency. In another embodiment of the present invention, the material removal module 40 may further include a cleaning fluid supply unit (not shown) to supply cleaning fluid to the substrate S while removing the protective layer, rinsing the first protective layer A1 and / or the second protective layer A2 remaining on the substrate S.

[0043] Furthermore, the substrate processing apparatus of the present invention may further include a monitoring module 50 electrically connected to the control module 10 for real-time monitoring of the drilling status of the substrate S. Referring to FIG8, the monitoring module 50 includes a light emitting unit 500 (monitoring light emitting unit), a first light receiving unit 501, a second light receiving unit 502, and an imaging device 503. The light emitting unit 500 is located on a first side of the substrate S to emit a monitoring light beam L0 toward the substrate S. The first light receiving unit 501 is located on a first side of the substrate S to receive the reflected light La of the monitoring light beam L0 reflected by the substrate to generate a reflected light signal. The second light receiving unit 502 is located on a second side of the substrate S to receive the transmitted light Lb of the monitoring light beam L0 passing through the substrate S to generate a transmitted light signal. The imaging device 503 is electrically connected to the first light receiving unit 501 and the second light receiving unit 502 to receive the reflected light La and the transmitted light Lb, and generate a detection pattern.

[0044] In one embodiment, the light emitting unit 500 can emit a monitoring beam L0 toward the substrate S. The wavelength range of the monitoring beam L0 is 300~2000 nm (e.g., any positive integer between 300 and 2000 nm), and the pulse width range is 50 fs to 50 ns (e.g., any positive integer between 50 fs and 50 ns). The first light receiving unit 501 and the second light receiving unit 502 are light wavefront sensors. The imaging device 503 is a waveform generator to generate a first detection waveform and a second detection waveform using the reflected light signal and the transmitted light signal received by the first light receiving unit 501 and the second light receiving unit 502.

[0045] In one embodiment, the first light receiving unit 501 and the second light receiving unit 502 are elastic sensors. The imaging device 503 generates a first stress distribution feature map and a second stress distribution feature map using the light signals received by the first light receiving unit 501 and the second light receiving unit 502.

[0046] In one embodiment, the first light receiving unit 501 and the second light receiving unit 502 are laser vibrometers, and the imaging device 503 generates waveforms from the reflected and transmitted ultrasound waves received by the first light receiving unit 501 and the second light receiving unit 502. In yet another embodiment, the first light receiving unit 501 and the second light receiving unit 502 are hyperspectral sensors, and the imaging device 503 generates detection spectra from the transmitted and reflected light signals received by the first light receiving unit 501 and the second light receiving unit 502. In this embodiment, the first light receiving unit 501 and the second light receiving unit 502 receive spectral ranges from 300 nm to 2500 nm (e.g., any positive integer between 300 and 2500 nm), and the spectrum is a continuous spectrum.

[0047] Furthermore, the monitoring module 50 can generate lasers, such as linear lasers or area lasers, from at least one optical element of the light emitting unit 500. This allows the monitoring module 50 to scan the substrate S using linear or area lasers, increasing monitoring efficiency. The monitoring module 50 can also detect the morphological parameters of the substrate S using lasers with different delay times to monitor the drilling status of the substrate S in real time. Further, the control module 10 can adjust the processing parameters of the processing laser beam and the removal parameters of the removal beam according to the drilling status of the substrate S.

[0048] The substrate processing apparatus of the present invention may further include an artificial intelligence module 60 electrically connected to the control module 10. The artificial intelligence module 60 can be used to learn and pre-train the material supply module 20 on the selection of supply quantity, supply position, and protective liquid type. It can also be used to automatically select the protective liquid type, supply quantity, and supply position based on the characteristics of the substrate S. Furthermore, the artificial intelligence module 60 can also be used to select processing parameters for processing the laser beam and removal parameters for removing the beam based on the protective liquid type, supply quantity, and supply position. Moreover, the artificial intelligence module 60 can also be used to automatically select a suitable monitoring module 50 based on the characteristics of the substrate S.

[0049] As shown in Figure 9, the artificial intelligence module 60 includes at least a database unit 600, a learning and training unit 603, a parameter optimization and setting unit 601, and a monitoring module setting unit 602. The database unit 600 stores relevant data about the substrate S, such as the type, shape, size, thickness, and density of the substrate S. Furthermore, the database unit 600 can be connected to the Internet via a wireless network unit (not shown) and can further connect to a cloud platform to update relevant data or provide it to the deep learning algorithm used by the learning and training unit 603. The learning and training unit 603 is connected to the database unit 600 and uses a deep learning algorithm to learn and pre-train based on the relevant data in the database unit 600. The parameter optimization and setting unit 601 is connected to the database unit 600 and optimizes the welding parameters based on the relevant data regarding the type, shape, size, thickness, and density of the substrate S. The monitoring module setting unit 602 is connected to the database unit 600, and selects a suitable monitoring module 50 based on relevant data on the type, shape, size, thickness and density of the substrate S.

[0050] The substrate processing apparatus of the present invention may further include a cleaning module. Referring to FIG10, the cleaning module may be disposed above or adjacent to the substrate S. The present invention does not particularly limit the arrangement of the cleaning module. The cleaning module may at least include a gas source 701 for storing cleaning material 703 and a gas nozzle 702 for supplying cleaning material 703 to the substrate S. For example, the gas source 701 contains liquid carbon dioxide and is supplied to the gas nozzle 702 at a pressure between about 700 psi and about 900 psi (e.g., any positive integer between 700 psi and 900 psi), causing the liquid carbon dioxide to undergo isenthalpic expansion into a stream of solid carbon dioxide particles as it leaves the gas nozzle 702, thereby carrying away impurities on the substrate S. In one embodiment, the distance between the gas nozzle 702 and the substrate S may be about 0.5 inches to about 2 inches (e.g., any positive integer between 0.5 inches and 2 inches). In one embodiment, the gas nozzle 702 and the substrate S may have tilt angles of about 15 degrees and 45 degrees (e.g., any positive integer between 15 and 45 inches) to avoid the momentum of the carbon dioxide particle flow being too high and damaging the substrate S.

[0051] [Beneficial Effects of the Examples]

[0052] One of the beneficial effects of the present invention is that the substrate processing apparatus, method and processing substrate provided by the present invention can protect the substrate from any fragments and cracks generated during the processing by means of the technical solutions of "a material supply module electrically connected to the control module for forming a protective layer on the substrate" and "a material removal module electrically connected to the control module for removing the protective layer on the substrate by means of light".

[0053] Furthermore, the substrate processing apparatus of the present invention includes an artificial intelligence module, which can integrate a material supply module, a drilling module and a material removal module to achieve more automated and more precise substrate drilling efficiency.

[0054] Furthermore, the processing substrate made using the processing method of the present invention is made of materials such as glass, which has advantages such as low electromagnetic signal shielding, high hardness, low cost, and light weight. It can be used as a material for 3C panels and camera modules. Therefore, the value of using the processing method of the present invention for glass drilling or welding is correspondingly increased, the processing efficiency is increased, and the economic cost is reduced, thus having broad prospects.

[0055] The content disclosed above is only a preferred and feasible embodiment of the present invention, and is not intended to limit the scope of the patent application of the present invention. Therefore, all equivalent technical changes made using the contents of the present invention specification and drawings are included in the scope of the patent application of the present invention.

[0056] S1~S3: Steps S:Substrate A1, A2: Protective layer B: Drilling B1~Bn, P1~Pn: Pulse signal V: Offset speed L0: Monitoring beam La: Reflected light Lb: Transmitting light 10: Control Module 20: Material Supply Module 30: Drilling Module 40: Material Removal Module 50: Monitoring Module 60: Artificial Intelligence Module 301: Processing laser generation modules 303: X-axis laser galvanometer scanning module 304: X-axis laser galvanometer controller 305: Y-axis laser galvanometer scanning module 306: Y-axis laser galvanometer controller 500: Light Emitting Unit 501: First optical receiving unit 502: Second optical receiving unit 503: Imaging Device 600: Database Unit 601: Parameter Optimization Setting Unit 602: Monitoring Module Setting Unit 603: Learning and Training Unit 701: Gas Source 702: Gas Nozzle 703: Cleaning Substances

Claims

1. A substrate processing apparatus, comprising: One control module; A material supply module, electrically connected to the control module, is used to form a protective layer on a substrate; A drilling module, electrically connected to the control module, is used to drill holes in the substrate; The system also includes a material removal module electrically connected to the control module for removing the protective layer on the substrate by means of light. The substrate processing apparatus further includes an artificial intelligence module comprising: a database unit containing relevant data about the substrate, wherein the database unit is connected to a cloud platform via the Internet to update the relevant data; a learning and training unit connected to the database unit, wherein the learning and training unit learns and pre-trains using a deep learning algorithm based on the relevant data in the database unit; a parameter optimization setting unit connected to the database unit for optimizing drilling parameters based on the relevant data of the substrate; and a monitoring module setting unit connected to the database unit for selecting a suitable monitoring module based on the relevant data of the substrate.

2. The substrate processing apparatus as claimed in claim 1, wherein, The protective layer is a water film, ceramic, metal, alloy, or plastic formed by chemical vapor deposition, physical vapor deposition, evaporation, sputtering, coating, or spraying; wherein the thickness of the protective layer is 100 nm to 5000 nm.

3. The substrate processing apparatus as claimed in claim 1, wherein, The drilling module includes: a processing laser generating module for providing a processing laser beam; a processing laser beam expander for expanding a laser spot of the processing laser beam to generate an expanded laser beam; an X-axis laser galvanometer scanning module for reflecting the expanded laser beam according to a plurality of X-axis rotation angles of the X-axis laser galvanometer scanning module; a Y-axis laser galvanometer scanning module for receiving the expanded laser beam reflected from the X-axis laser galvanometer scanning module and reflecting the expanded laser beam according to a plurality of Y-axis rotation angles of the Y-axis laser galvanometer scanning module; and a condenser lens for focusing the expanded laser beam into a focused laser beam having a predetermined aspect ratio, so as to project the focused laser beam onto one or more drill holes of the substrate; wherein the pulse width of the processing laser beam is between 50 and 500. Between fs, the repetition frequency of the processing laser beam is between 0.5 and 10 GHz, and the pulse energy of the processing laser beam is between 100 and 1000 μJ. The processing laser generating module, the processing laser beam expander, the condenser lens, and the substrate are arranged in the same optical path. The control module controls the processing parameters of the processing laser beam according to the supply amount, supply position, protective liquid type, and protective layer thickness of the material supply module.

4. The substrate processing apparatus as claimed in claim 1, wherein, The material removal module includes a removal light emitting unit for emitting a removal beam toward the substrate. The pulse width of the removal beam is between 300 fs and 100,000 fs, the repetition frequency of the removal beam is between 0.1 kHz and 2000 kHz, and the pulse energy of the removal beam is between 0.1 μJ and 1000 μJ. The control module controls the removal parameters of the removal beam according to the supply amount, supply position, type of protective liquid, and thickness of the protective layer of the material supply module.

5. The substrate processing apparatus as claimed in claim 1, wherein, The material removal module uses at least one optical element to generate a linear laser or a planar laser; wherein the substrate comprises aluminum silicate, aluminum borosilicate, soda lime, borosilicate, or silica.

6. The substrate processing apparatus as claimed in claim 1, wherein, The substrate processing apparatus further includes a monitoring module electrically connected to the control module for monitoring the drilling status of the substrate. The monitoring module includes a light emitting unit, a light receiving unit, and an imaging device. The light emitting unit emits a monitoring beam toward the substrate, and the light receiving unit receives a reflected light from the monitoring beam reflected by the substrate. The imaging device converts the signal of the reflected light and generates a detection pattern.

7. The substrate processing apparatus as claimed in claim 1, wherein, The substrate processing apparatus further includes a cleaning module, which includes a gas source and a gas nozzle. The gas nozzle is connected to the gas source to supply a cleaning substance to the substrate to remove impurities from the substrate.

Images