Transfer system, transfer device, and transfer method

Abstract

This invention provides a technique for automating the teaching of a handling robot arm. To achieve the above objective, an embodiment of the present invention provides a handling system comprising: a handling robot arm that, according to an action instruction, uses an end effector to handle an object; and a control unit that outputs the action instruction to the handling robot arm; at least one of the end effector and the object being handled having at least one of a sensor and a camera; the control unit that calculates the relative position between the end effector and the object being handled based on at least one of the detection result of the sensor and the image captured by the camera; and the control unit that, based on the relative position, determines a teaching position of the end effector relative to the object being handled and outputs the action instruction to the handling robot arm to position the end effector at the teaching position.

Description

[Technical Field]

[0001] This invention relates to a transport system, a transport device, and a transport method. [Previous Technology]

[0002] The teaching method of using a wafer handling device with a plurality of cameras arranged on the outer periphery is known (see, for example, Patent Document 1).

[0003] A method for adjusting the transport position of the focusing ring (annular member) to improve the accuracy of the placement position of the focusing ring (annular member) is well known (see, for example, Patent Document 2). [Prior Art Documents] [Patent Documents]

[0004] [Patent Document 1] Japanese Patent Application Publication No. 2019-102728 [Patent Document 2] Japanese Patent Application Publication No. 2020-096122 [Summary of the Invention]

[0005] [The problem the invention aims to solve]

[0006] This invention provides a technique for automating the teaching process of a robotic arm for material handling. [Means of the Problem]

[0007] An embodiment of the present invention provides a transport system comprising: a transport robotic arm that transports an object using an end effector according to an action instruction; and a control unit that outputs the action instruction to the transport robotic arm; wherein at least one of the end effector and the object has at least one of a sensor and a camera; the control unit calculates the relative position between the end effector and the object based on at least one of the detection result of the sensor and the image captured by the camera; the control unit determines a taught position of the end effector relative to the object based on the relative position and outputs the action instruction to the transport robotic arm to position the end effector at the taught position. [Effects of the Invention]

[0008] According to the present invention, the teaching of the handling robot arm can be automated.

Implementation Method

[0010] Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings, which are non-limiting examples. In all the accompanying drawings, the same or corresponding reference numerals will be used for the same or corresponding components or parts, and repeated descriptions will be omitted.

[0011] <First Embodiment> [Processing System】 Referring to FIG1, an example of a processing system for the embodiment will be described. As shown in FIG1, the processing system PS is a system capable of performing various processes such as plasma processing on a substrate.

[0012] The processing system PS includes: vacuum transport modules TM1 and TM2, program modules PM1 to PM12, load locking modules LL1 and LL2, atmospheric transport module LM, alignment device AN, storage unit SR, etc.

[0013] Vacuum transport modules TM1 and TM2 each have a roughly quadrangular shape when viewed from above. Vacuum transport module TM1 has program modules PM1 to PM6 connected to two paired sides. On one of the other paired sides of vacuum transport module TM1, loading and locking modules LL1 and LL2 are connected, and on the other side, a channel (not shown) for connecting to vacuum transport module TM2 is connected. The side of vacuum transport module TM1 connected to loading and locking modules LL1 and LL2 has an angle corresponding to each of the two loading and locking modules LL1 and LL2. Vacuum transport module TM2 has program modules PM7 to PM12 connected to two paired sides. On one of the other paired sides of vacuum transport module TM2, a channel (not shown) for connecting to vacuum transport module TM1 is connected. Vacuum handling modules TM1 and TM2 are vacuum chambers with a vacuum environment, and vacuum handling robotic arms TR1 and TR2 are respectively installed inside them.

[0014] Vacuum handling robotic arms TR1 and TR2 are configured to rotate, extend, and lift freely. Vacuum handling robotic arms TR1 and TR2 transport objects according to action instructions output by the control unit CU (described later). For example, vacuum handling robotic arm TR1 uses forks FK11 and FK12 at its front end to hold the object and transports it between loading and locking modules LL1 and LL2, program modules PM1 to PM6, and a channel (not shown in the figure). For example, vacuum handling robotic arm TR2 uses forks FK21 and FK22 at its front end to hold the object and transports it between program modules PM7 to PM12 and a channel (not shown in the figure). The forks are also referred to as pickers or end effectors.

[0015] The object to be transported includes a substrate and consumable components. The substrate may be, for example, a semiconductor wafer or a sensor wafer. The consumable components are components that are replaceably installed within the program modules PM1 to PM12, and are consumed during various processes such as plasma processing performed within the program modules PM1 to PM12. Consumable components may include, for example, the annular assembly 112 described later, and components constituting the spray head 13.

[0016] Program modules PM1 to PM12 have a processing chamber and a platform (stage) disposed inside. After the substrate is placed on the platform, the internal pressure of program modules PM1 to PM12 is reduced, a processing gas is introduced, RF (Radio Frequency) power is applied to generate plasma, and plasma processing is performed on the substrate using the plasma. Vacuum transport modules TM1 and TM2 and program modules PM1 to PM12 are separated by a gate valve G1 that can be opened and closed at will.

[0017] Loading locking modules LL1 and LL2 are configured between the vacuum transport module TM1 and the atmospheric transport module LM. Loading locking modules LL1 and LL2 have internal pressure variable chambers that can switch the internal pressure to vacuum or atmospheric pressure. Loading locking modules LL1 and LL2 have platforms configured inside. When a substrate is moved from the atmospheric transport module LM to the vacuum transport module TM1, loading locking modules LL1 and LL2 first maintain the internal pressure at atmospheric pressure, then receive the substrate from the atmospheric transport module LM, then depressurize the internal pressure, and then move the substrate into the vacuum transport module TM1. When a substrate is moved from the vacuum transport module TM1 to the atmospheric transport module LM, loading locking modules LL1 and LL2 first maintain the internal pressure at vacuum, then receive the substrate from the vacuum transport module TM1, then pressurize the internal pressure to atmospheric pressure, and then move the substrate into the atmospheric transport module LM. Loading locking modules LL1 and LL2 and vacuum transport module TM1 are separated by a gate valve G2 that can be opened and closed at will. Loading locking modules LL1 and LL2 and atmospheric transport module LM are separated by a gate valve G3 that can be opened and closed at will.

[0018] An atmospheric transport module LM is configured opposite to a vacuum transport module TM1. The atmospheric transport module LM may be, for example, an EFEM (Equipment Front End Module). The atmospheric transport module LM is cuboid in shape and has an FFU (Fan Filter Unit) that maintains an atmospheric transport chamber at atmospheric pressure. Two loading locking modules LL1 and LL2 are connected to one side along the long side of the atmospheric transport module LM. Loading ports LP1 to LP4 are connected to the other side along the long side of the atmospheric transport module LM. Containers C for holding multiple (e.g., 25) substrates are placed on loading ports LP1 to LP4. Container C may be, for example, a FOUP (Front-Opening Unified Pod). An atmospheric transport robotic arm TR3 for transporting objects is configured inside the atmospheric transport module LM.

[0019] The atmospheric transport robotic arm TR3 is configured to move along the long side of the atmospheric transport module LM, and is also configured to rotate, extend, and lift freely. The atmospheric transport robotic arm TR3 transports the transported object according to the action instructions output by the control unit CU (described later). For example, the atmospheric transport robotic arm TR3 holds the transported object with the fork FK31 configured at its front end, and transports the transported object between the loading ports LP1~LP4, the loading locking modules LL1, LL2, the aligner AN, and the storage unit SR.

[0020] The aligner AN is connected to one side along the short side of the atmospheric transport module LM. However, the aligner AN can also be connected to one side along the long side of the atmospheric transport module LM. Furthermore, the aligner AN can also be installed inside the atmospheric transport module LM. The aligner AN includes a support platform, an optical sensor (neither shown in the figure), etc. Here, "aligner" refers to a device for detecting the position of the transported object.

[0021] The support platform is a platform that can rotate about a center of an axis extending in the vertical direction, and is configured to support a substrate thereon. The support platform is rotated by a drive device (not shown in the figure). The drive device is controlled by a control unit CU described later. When the support platform rotates due to the power from the drive device, the substrate disposed on the support platform also rotates accordingly.

[0022] An optical sensor detects the edge of the substrate during substrate rotation. Based on the edge detection result, the optical sensor detects the offset of the angular position of the substrate notch (or other mark) relative to a reference angular position, and the offset of the substrate center position relative to the reference position. The optical sensor outputs the offset of the notch angular position and the offset of the substrate center position to the control unit CU described later. The control unit CU calculates the rotation amount of the rotating support stage to correct the notch angular position to the reference angular position based on the offset of the notch angular position. The control unit CU controls a drive device (not shown) to rotate the rotating support stage by the rotation amount. In this way, the angular position of the notch can be corrected to the reference angular position. In addition, the control unit CU controls the position of the fork FK31 of the atmospheric transport robot arm TR3 when receiving the substrate from the aligner AN based on the offset of the substrate center position, so that the center position of the substrate is aligned with a predetermined position on the fork FK31 of the atmospheric transport robot arm TR3.

[0023] The storage unit SR is connected to a side along the long side of the atmospheric transport module LM. However, the storage unit SR may also be connected to a side along the short side of the atmospheric transport module LM. Alternatively, the storage unit SR may be installed inside the atmospheric transport module LM. The storage unit SR stores the transported object.

[0024] A control unit (CU) is provided in the processing system PS. The control unit CU may be, for example, a computer. The control unit CU includes: a CPU (Central Processing Unit), RAM (Random Access Memory), ROM (Read Only Memory), and auxiliary memory devices. The CPU operates according to the program stored in the ROM or auxiliary memory devices to control various parts of the processing system PS. For example, the control unit CU outputs action instructions to vacuum handling robotic arms TR1 and TR2, atmospheric handling robotic arm TR3, etc. The action instructions include indications of the alignment of the forks FK11, FK12, FK21, FK22, and FK31 that are used to transport the object to the designated transport location.

[0025] [Plasma Processing System] Referring to FIG2, an example of a plasma processing system that can be used as any one of the program modules PM1 to PM12 will be described.

[0026] In one embodiment, a plasma processing system includes a plasma processing apparatus 1 and a plasma processing control unit 2. The plasma processing apparatus 1 includes a plasma processing chamber 10, a substrate support unit 11, and a plasma generation unit 12. The plasma processing chamber 10 has a plasma processing space. Furthermore, the plasma processing chamber 10 has at least one gas supply port for supplying at least one type of processing gas to the plasma processing space, and at least one gas outlet for discharging gas from the plasma processing space. The gas supply port is connected to the gas supply unit 20 (described later); the gas outlet is connected to the exhaust system 40 (described later). The substrate support unit 11 is disposed within the plasma processing space and has a substrate support surface for supporting a substrate.

[0027] The plasma generation unit 12 is configured to generate plasma from at least one type of processing gas supplied to the plasma processing space. The plasma generated in the plasma processing space can be: capacitively coupled plasma (CCP), inductively coupled plasma (ICP), electron cyclotron resonance plasma (ECRP), helicon wave plasma (HWP), or surface wave plasma (SWP), etc. Furthermore, various types of plasma generation units, including AC (Alternating Current) plasma generation units and DC (Direct Current) plasma generation units, can also be used. In one embodiment, the AC signal (AC power) used by the AC plasma generation unit has a frequency in the range of 100 kHz to 10 GHz. Therefore, the AC signal includes RF signals and microwave signals. In one embodiment, the RF signal has a frequency in the range of 200kHz to 150MHz.

[0028] The plasma processing control unit 2 processes computer-executable commands that cause the plasma processing apparatus 1 to perform the various steps described herein. The plasma processing control unit 2 may be configured to "control the components of the plasma processing apparatus 1 to perform the various steps described herein." In one embodiment, part or all of the plasma processing control unit 2 may also be included in the plasma processing apparatus 1. The plasma processing control unit 2 may, for example, include a computer 2a. The computer 2a may, for example, include: a processing unit (CPU) 2a1, a memory unit 2a2, and a communication interface 2a3. The processing unit 2a1 may be configured to "perform various control actions according to the program stored in the memory unit 2a2." The memory unit 2a2 may also include: RAM, ROM, HDD (Hard Disk Drive), SSD (Solid State Drive), or a combination of these memory types. The communication interface 2a3 can also communicate with the plasma processing device 1 via communication lines such as LAN (Local Area Network).

[0029] Referring to FIG3, the following describes a construction example of a capacitor-coupled plasma processing apparatus, which is an example of a plasma processing apparatus 1.

[0030] A capacitively coupled plasma processing apparatus 1 includes a plasma processing chamber 10, a gas supply unit 20, a power supply 30, and an exhaust system 40. The plasma processing apparatus 1 also includes a substrate support unit 11 and a gas inlet unit. The gas inlet unit is configured to introduce at least one processing gas into the plasma processing chamber 10. The gas inlet unit includes a spray head 13. The substrate support unit 11 is disposed within the plasma processing chamber 10. The spray head 13 is disposed above the substrate support unit 11. In one embodiment, the spray head 13 constitutes at least a portion of the ceiling of the plasma processing chamber 10. The plasma processing chamber 10 has a plasma processing space 10s defined by the spray head 13, the sidewall 10a of the plasma processing chamber 10, and the substrate support unit 11. The sidewall 10a is grounded. The spray head 13 and the substrate support unit 11 are electrically insulated from the housing of the plasma processing chamber 10.

[0031] The substrate support portion 11 includes a body portion 111 and an annular component 112. The body portion 111 has a central region (substrate support surface) 111a for supporting a substrate (wafer) W, and an annular region (annular support surface) 111b for supporting the annular component 112. The annular region 111b of the body portion 111 surrounds the central region 111a of the body portion 111 when viewed from above. The substrate W is disposed on the central region 111a of the body portion 111; the annular component 112 is disposed on the annular region 111b of the body portion 111 in such a way that it surrounds the substrate W on the central region 111a of the body portion 111. In one embodiment, the body portion 111 includes a base and an electrostatic chuck. The base includes a conductive member. The conductive member of the base functions as a lower electrode. The electrostatic chuck is disposed on the base. The top surface of the electrostatic chuck has a substrate support surface 111a. The annular assembly 112 includes one or more annular members. At least one of the annular members is an edge ring. Although omitted in the figures, the substrate support portion 11 may also include a temperature control module configured to adjust at least one of the electrostatic chuck, the annular assembly 112, and the substrate to a target temperature. The temperature control module may also include a heater, a heat-conducting medium, a flow channel, or a combination of these components. A heat-conducting fluid such as brine or gas flows through the flow channel. Additionally, the substrate support portion 11 may also include a heat-conducting gas supply portion configured to supply heat-conducting gas between the back surface of the substrate W and the substrate support surface 111a.

[0032] The spray head 13 is configured to introduce at least one type of processing gas from the gas supply unit 20 into the plasma processing space 10s. The spray head 13 has at least one gas supply port 13a, at least one gas diffusion chamber 13b, and a plurality of gas inlets 13c. The processing gas supplied to the gas supply port 13a is introduced into the plasma processing space 10s through the gas diffusion chamber 13b and the plurality of gas inlets 13c. In addition, the spray head 13 includes a conductive member. The conductive member of the spray head 13 functions as an upper electrode. In addition, the gas inlet unit, in addition to the spray head 13, may also include one or more side gas injectors (SGIs), which are installed in one or more openings formed in the sidewall 10a.

[0033] The gas supply unit 20 may also include at least one gas source 21 and at least one flow controller 22. In one embodiment, the gas supply unit 20 is configured to supply at least one type of processing gas from its respective gas source 21 to the spray head 13 via its respective flow controller 22. Each flow controller 22 may include, for example, a mass flow controller or a pressure-controlled flow controller. Furthermore, the gas supply unit 20 may also include at least one flow modulation device for modulating or pulsed the flow of at least one type of processing gas.

[0034] The power supply 30 includes an RF power supply 31 coupled to the plasma processing chamber 10 through at least one impedance matching circuit. The RF power supply 31 is configured to supply at least one RF signal (RF power), such as a source RF signal and a bias RF signal, to the conductive members of the substrate support portion 11 and / or the conductive members of the spray head 13. This allows plasma to be formed from at least one type of processing gas supplied to the plasma processing space 10s. Therefore, the RF power supply 31 can function as at least a part of the plasma generation portion 12. Furthermore, by supplying a bias RF signal to the conductive members of the substrate support portion 11, a bias potential can be generated on the substrate W, attracting ionic components in the formed plasma to the substrate W.

[0035] In one embodiment, the RF power supply 31 includes a first RF generation unit 31a and a second RF generation unit 31b. The first RF generation unit 31a is configured to "couple with the conductive members of the substrate support 11 and / or the conductive members of the spray head 13 through at least one impedance matching circuit, and generate a source RF signal (source RF power) for plasma generation." In one embodiment, the source RF signal has a frequency in the range of 13MHz to 150MHz. In one embodiment, the first RF generation unit 31a may also be configured to generate a plurality of source RF signals with different frequencies. The generated one or more source RF signals are supplied to the conductive members of the substrate support 11 and / or the conductive members of the spray head 13. The second RF generation unit 31b is configured to "couple with the conductive members of the substrate support 11 through at least one impedance matching circuit, and generate a bias RF signal (bias RF power)." In one embodiment, the bias RF signal has a lower frequency than the source RF signal. In another embodiment, the bias RF signal has a frequency in the range of 400 kHz to 13.56 MHz. In yet another embodiment, the second RF generation unit 31b can also be configured to generate a plurality of bias RF signals with different frequencies. The generated one or more bias RF signals are supplied to the conductive members of the substrate support unit 11. Furthermore, in various embodiments, at least one of the source RF signal and the bias RF signal can be pulsed.

[0036] Additionally, the power supply 30 may also include a DC power supply 32 coupled to the plasma processing chamber 10. The DC power supply 32 includes a first DC generation unit 32a and a second DC generation unit 32b. In one embodiment, the first DC generation unit 32a is configured to "connect to a conductive member of the substrate support 11 and generate a first DC signal". The generated first DC signal is applied to the conductive member of the substrate support 11. In one embodiment, the first DC signal may also be applied to other electrodes, such as electrodes within the electrostatic chuck. In one embodiment, the second DC generation unit 32b is configured to "connect to a conductive member of the spray head 13 and generate a second DC signal". The generated second DC signal is applied to the conductive member of the spray head 13. In various embodiments, the first and second DC signals may also be pulsed. In addition, the first and second DC generating units 32a and 32b can also be added to the RF power supply 31, or the first DC generating unit 32a can replace the second RF generating unit 31b.

[0037] The exhaust system 40 may be connected, for example, to a gas outlet 10e located at the bottom of the plasma processing chamber 10. The exhaust system 40 may also include a pressure regulating valve and a vacuum pump. The pressure within the plasma processing space 10s is adjusted using the pressure regulating valve. The vacuum pump may also include a turbomolecular pump, a dry pump, or a combination of such pumps.

[0038] [Method for Calculating Relative Positions] Referring to FIG4, an example of a method for calculating the relative position of the fork FK11 of the vacuum handling robot TR1 and the substrate W will be described. Furthermore, the method for calculating the relative positions of the fork FK12 of the vacuum handling robot TR1 and the forks FK21 and FK22 of the vacuum handling robot TR2 and the substrate W can also be the same.

[0039] Figure 4 is an explanatory diagram of the relative position of the fork FK11 of the vacuum handling robot arm TR1 and the substrate W. Figure 4(a) is a top view of the fork FK11 holding the substrate W. Figure 4(b) is a cross-sectional view of the fork FK11 holding the substrate W, showing the cross-section cut off by the chain line 4B-4B at a point in Figure 4(a).

[0040] The fork portion FK11 has a general U-shape when viewed from above. The fork portion FK11 includes a plurality of pad portions PD, a conductor CD1, etc. The plurality of pad portions PD contact the bottom surface of the substrate W to hold the substrate W in place. When the substrate W is positioned in a predetermined position (e.g., the center position) of the fork portion FK11, the conductor CD1 is positioned such that its center is aligned with the center of the capacitive sensor CS when viewed from above. The conductor CD1 is, for example, made of aluminum.

[0041] The substrate W is a circular sensor wafer. The substrate W includes position detection sensors PS1~PS6, electrostatic capacitance sensor CS, etc.

[0042] Position detection sensors PS1 to PS6 are disposed on the same circumference, for example, at the outer periphery of the surface of the substrate W. Position detection sensors PS1 to PS6 may be, for example, cameras, configured to capture images of the underside or side of the substrate W. However, the types of position detection sensors PS1 to PS6 are not limited to this.

[0043] A capacitance sensor CS is disposed at a predetermined position on the substrate W. When the substrate W is held by the fork FK11, the capacitance sensor CS detects the capacitance corresponding to its positional relationship with the conductor CD1 disposed on the fork FK11, and outputs the detected value (detection result) to the control unit CU.

[0044] Referring to FIG5, an example of a method for calculating the relative position of the fork FK31 of the atmospheric transport robot arm TR3 and the substrate W will be described.

[0045] Figure 5 is an explanatory diagram of the relative position of the fork FK31 of the atmospheric transport robot arm TR3 and the substrate W. Figure 5(a) is a top view of the fork FK31 holding the substrate W. Figure 5(b) is a cross-sectional view of the fork FK31 holding the substrate W, showing the cross-section cut off by the chain line 5B-5B at a point in Figure 5(a).

[0046] The fork portion FK31, viewed from above, has a roughly U-shaped form. The fork portion FK31 includes a plurality of suction holes V1, a suction passage V2, a conductor CD2, etc. The fork portion FK31 uses the plurality of suction holes V1 to vacuum-adsorb and hold the bottom surface of the substrate W. The plurality of suction holes V1 are connected to an exhaust device V4 through the suction passage V2 and an exhaust pipe V3. The exhaust device V4 includes a valve, a regulator, a vacuum pump, etc., which adjusts the pressure while suctioning the interior of the suction passage V2 and the exhaust pipe V3. An adsorption sensor V5 is inserted into the exhaust pipe V3. The adsorption sensor V5 detects the pressure inside the exhaust pipe V3 (hereinafter also referred to as "adsorption pressure") and outputs it to the control unit CU. The control unit CU calculates the height position when the top surface of the fork portion FK31 contacts the bottom surface of the substrate W based on the adsorption pressure detected by the adsorption sensor V5. When the substrate W is positioned at a predetermined location (e.g., the center position) on the fork FK31, the conductor CD2 is positioned such that its center aligns with the center of the capacitive sensor CS when viewed from above. The conductor CD2 is, for example, made of aluminum.

[0047] The substrate W is the same as the substrate W shown in FIG. 4(a) and FIG. 4(b). That is, the substrate W is a sensor wafer in the shape of a circular plate. The substrate W includes position detection sensors PS1~PS6, electrostatic capacitance sensor CS, etc.

[0048] A capacitance sensor CS is disposed at a predetermined position on the substrate W. When the substrate W is attracted and held by the fork FK31, the capacitance sensor CS detects the capacitance corresponding to its positional relationship with the conductor CD2 disposed on the fork FK31, and outputs the detection value (detection result) to the control unit CU.

[0049] The electrostatic capacitance sensor CS, for example, as shown in FIG6, has a circular shape larger than that of conductor CD1 (CD2) when viewed from above. However, the electrostatic capacitance sensor CS may also have a circular shape of the same size as conductor CD1 (CD2) when viewed from above, or it may have a circular shape smaller than conductor CD1 (CD2) when viewed from above. In addition, the electrostatic capacitance sensor CS may also have a shape other than a circular shape, such as a rectangular shape or a polygonal shape.

[0050] The electrostatic capacitance sensor CS, for example, as shown in FIG7, may also include three electrostatic capacitance sensors CS1 to CS3 arranged at the vertices of an equilateral triangle in top view. Each of the three electrostatic capacitance sensors CS1 to CS3 has a circular shape smaller than that of the conductor CD1 (CD2) in top view. However, the plurality of electrostatic capacitance sensors may each have a shape other than a circular shape, such as a rectangular shape or other polygonal shape. In addition, the electrostatic capacitance sensor CS may include two electrostatic capacitance sensors or more than four electrostatic capacitance sensors.

[0051] In addition, the examples in Figures 4 and 5 illustrate the configuration of the electrostatic capacitance sensor CS on the substrate W, but are not limited thereto. For example, the electrostatic capacitance sensor CS may also be configured on the fork portions FK11 and FK31.

[0052] [Position Alignment Method] Regarding the position alignment method of the implementation state, let's take the implementation in the aforementioned processing system PS as an example for explanation.

[0053] The position alignment method of the embodiment sample is implemented, for example, when the processing system PS is started. Additionally, the position alignment method of the embodiment sample is implemented, for example, when the forks FK11 and FK12 of the vacuum handling robot arm TR1, the forks FK21 and FK22 of the vacuum handling robot arm TR2, and the fork FK31 of the atmospheric handling robot arm TR3 are replaced. Furthermore, the position alignment method of the embodiment sample is implemented, for example, when parts (e.g., electrostatic chucks, edge rings) within the program modules PM1 to PM12 are replaced. However, the timing of implementing the position alignment method of the embodiment sample is not limited to the illustrated timing.

[0054] Furthermore, before implementing the position alignment method for the sample, it is advisable to perform approximate positioning. Approximate positioning refers to temporarily determining the coordinates of the transport position relative to the transport location of the transport object by the fork of the transport robot arm. Approximate positioning is performed to avoid contact between the transport object held by the fork and components within the handling system, and the transport position coordinates are temporarily determined with coarse accuracy. In addition, if the assembly error of the handling system is very small, the transport position coordinates can be calculated from the design values ​​of the handling system, and approximate positioning can be omitted.

[0055] Hereinafter, the position alignment method of the atmospheric handling robot arm TR3 will be explained first, and the position alignment method of the vacuum handling robot arms TR1 and TR2 will be explained next.

[0056] (Position Alignment of Atmospheric Transport Robotic Arm) Referring to FIG8, an example of the position alignment method for the atmospheric transport robotic arm TR3 will be described. As shown in FIG8, the position alignment method for the atmospheric transport robotic arm TR3 firstly involves aligning the atmospheric transport robotic arm TR3, the aligner AN, and the loading ports LP1~LP4 in step S10. Next, in step S20, the atmospheric transport robotic arm TR3 is aligned with the storage unit SR. Next, in step S30, the atmospheric transport robotic arm TR3 is aligned with the loading locking modules LL1 and LL2. The order of steps S20 and S30 can also be interchanged.

[0057] Referring to FIG9, an example of the position alignment (step S10) of the atmospheric transport robot arm TR3, the aligner AN, and the loading port LP1 will be described. In addition, at the beginning of step S10, the container C containing the sensor wafer is placed on the loading port LP1.

[0058] In step S11, the control unit CU controls the atmospheric transport robot arm TR3 to retrieve the sensor wafer from the container C placed in the loading port LP1 using the fork FK31. At this time, the control unit CU calculates the height position when the top surface of the fork FK31 contacts the bottom surface of the sensor wafer based on the detection value of the adsorption sensor V5 of the fork FK31. In addition, the control unit CU corrects the Z-axis teaching position based on the calculated height position.

[0059] In step S12, the control unit CU controls the atmospheric transport robot arm TR3 to transport the sensor wafer obtained by the fork unit FK31 to the alignment unit AN.

[0060] In step S13, the control unit CU controls the alignment unit AN to detect the horizontal position of the sensor wafer. The horizontal position includes the notch angle position, the center position of the sensor wafer, etc.

[0061] In step S14, the control unit CU calculates the horizontal position offset between the loading port LP1 and the aligner AN based on the detection result of the aligner AN. Furthermore, the control unit CU corrects the teaching positions of the X-axis and Y-axis based on the calculated position offset.

[0062] In step S15, the control unit CU controls the atmospheric transport robot arm TR3 to obtain the sensor wafer from the aligner AN at the corrected position using the fork FK31.

[0063] In step S16, the control unit CU calculates the relative position of the fork portion FK31 and the sensor wafer. For example, the control unit CU calculates the relative position of the fork portion FK31 and the sensor wafer based on the detection value of the electrostatic capacitance sensor CS installed on the sensor wafer. Alternatively, the control unit CU can also calculate the relative position of the fork portion FK31 and the sensor wafer by detecting the detection values ​​of sensors PS1 to PS6 based on the position of the sensors installed on the sensor wafer.

[0064] In step S17, the control unit CU determines whether the calculated relative position between the fork portion FK31 and the sensor wafer is within a reference value. When the relative position is within the reference value in step S17, the control unit CU proceeds the process to step S18. On the other hand, when the relative position is not within the reference value in step S17, the control unit CU performs a correction of the taught position to bring the relative position within the reference value and returns the process to step S15.

[0065] In step S18, the control unit CU controls the atmospheric transport robotic arm TR3 to transport the sensor wafer obtained by the fork unit FK31 to a predetermined recycling location. The predetermined recycling location may be the container C placed on the loading port LP1, the storage unit SR, etc. After the sensor wafer is recycled, the control unit CU commands the processing to end.

[0066] The above is an example of the position alignment of the atmospheric handling robot arm TR3, the alignment device AN and the loading port LP1. However, the same method can be used to align the loading ports LP2 to LP4 as for the loading port LP1.

[0067] Referring to FIG10, an example of the alignment of the atmospheric transport robot arm TR3 with the storage unit SR (step S20) will be described. In addition, at the beginning of step S20, the alignment of the atmospheric transport robot arm TR3, the aligner AN and the loading port LP1 (step S10) has been completed.

[0068] In step S21, the control unit CU controls the atmospheric transport robot arm TR3 to place the sensor wafer at a predetermined position (e.g., the center position) of the storage unit SR using the fork FK31. At this time, the control unit CU controls the atmospheric transport robot arm TR3 to detect the detection values ​​of sensors PS1 to PS6 according to the position of the sensor wafer, and place the sensor wafer at the predetermined position of the storage unit SR.

[0069] In step S22, the control unit CU controls the atmospheric transport robot arm TR3 to retrieve the sensor wafer from the storage unit SR using the fork part FK31. At this time, the control unit CU calculates the height position when the top surface of the fork part FK31 contacts the bottom surface of the sensor wafer based on the detection value of the adsorption sensor V5 of the fork part FK31. In addition, the control unit CU corrects the Z-axis teaching position based on the calculated height position.

[0070] In step S23, the control unit CU controls the atmospheric transport robot arm TR3 to transport the sensor wafer to the alignment unit AN using the fork FK31.

[0071] In step S24, the control unit CU controls the alignment unit AN to detect the horizontal position of the sensor wafer.

[0072] In step S25, the control unit CU calculates the horizontal position offset between the storage unit SR and the aligner AN based on the detection result of the aligner AN. Furthermore, the control unit CU corrects the teaching positions of the X-axis and Y-axis based on the calculated position offset.

[0073] In step S26, the control unit CU controls the atmospheric transport robotic arm TR3 to transport the sensor wafer to a predetermined recycling position using the fork FK31. The predetermined recycling position may be the container C placed on the loading port LP1, the storage unit SR, etc. After the sensor wafer is recycled, the control unit CU terminates the process.

[0074] Referring to FIG11, another example of the alignment of the atmospheric transport robot arm TR3 with the storage unit SR (step S20) will be described. In addition, at the beginning of step S20, the alignment of the atmospheric transport robot arm TR3, the aligner AN and the loading port LP1 (step S10) has been completed.

[0075] In step S21A, the control unit CU controls the atmospheric transport robot arm TR3 to place the sensor wafer at a predetermined position (e.g., the center position) in the storage unit SR using the fork FK31. Furthermore, the control unit CU calculates the height position when the top surface of the fork FK31 contacts the bottom surface of the sensor wafer based on the detection value of the adsorption sensor V5 of the fork FK31. Additionally, the control unit CU corrects the Z-axis teaching position based on the calculated height position.

[0076] In step S22A, the control unit CU calculates the relative position of the storage unit SR and the sensor wafer. For example, the control unit CU calculates the relative position of the storage unit SR and the sensor wafer by detecting the detection values ​​of sensors PS1 to PS6 based on the position of the sensors disposed on the sensor wafer. However, the control unit CU may also calculate the relative position of the storage unit SR and the sensor wafer based on the detection value of the electrostatic capacitance sensor CS disposed on the sensor wafer.

[0077] In step S23A, the control unit CU determines whether the calculated relative position between the storage unit SR and the sensor wafer is within a reference value. If the relative position is within the reference value in step S23A, the control unit CU proceeds the process to step S27A. On the other hand, if the relative position is not within the reference value in step S23A, the control unit CU performs a correction of the taught position to bring the relative position within the reference value and proceeds the process to step S24A.

[0078] In step S24A, the control unit CU controls the atmospheric transport robot arm TR3 to obtain the sensor wafer from the storage unit SR at the corrected position using the fork FK31.

[0079] In step S25A, the control unit CU controls the atmospheric transport robot arm TR3 to send the sensor wafer acquired by the fork unit FK31 back to the storage unit SR.

[0080] In step S26A, the control unit CU calculates the relative position of the storage unit SR and the sensor wafer. For example, the control unit CU calculates the relative position of the storage unit SR and the sensor wafer based on the detection values ​​of sensors PS1 to PS6, which are located on the sensor wafer. However, the control unit CU may also calculate the relative position of the storage unit SR and the sensor wafer based on the detection values ​​of the electrostatic capacitance sensor CS, which is located on the sensor wafer. After calculating the relative position, the control unit CU returns the process to step S23A.

[0081] In step S27A, the control unit CU controls the atmospheric transport robotic arm TR3 to transport the sensor wafer to a predetermined recycling position using the fork FK31. The predetermined recycling position may be the container C placed on the loading port LP1, the storage unit SR, etc. After the sensor wafer is recycled, the control unit CU terminates the process.

[0082] Referring to FIG12, an example of the alignment of the atmospheric transport robot arm TR3 with the loading locking module LL1 (step S30) will be described. In addition, at the beginning of step S30, the alignment of the atmospheric transport robot arm TR3, the aligner AN and the loading port LP1 (step S10) has been completed.

[0083] In step S31, the control unit CU controls the atmospheric transport robotic arm TR3 to place the sensor wafer at a predetermined position (e.g., the center position) of the loading locking module LL1 using the fork FK31. At this time, the control unit CU controls the atmospheric transport robotic arm TR3 to detect the detection values ​​of sensors PS1 to PS6 according to the position of the sensor wafer, and place the sensor wafer at the predetermined position of the loading locking module LL1.

[0084] In step S32, the control unit CU controls the atmospheric transport robot arm TR3 to acquire the sensor wafer from the loading and locking module LL1 using the fork FK31. At this time, the control unit CU calculates the height position when the top surface of the fork FK31 contacts the bottom surface of the sensor wafer based on the detection value of the adsorption sensor V5 of the fork FK31. In addition, the control unit CU corrects the Z-axis teaching position based on the calculated height position.

[0085] In step S33, the control unit CU controls the atmospheric transport robot arm TR3 to transport the sensor wafer to the alignment unit AN using the fork FK31.

[0086] In step S34, the control unit CU controls the alignment unit AN to detect the horizontal position of the sensor wafer.

[0087] In step S35, the control unit CU calculates the horizontal position offset between the loading locking module LL1 and the aligner AN based on the detection result of the aligner AN. Furthermore, the control unit CU corrects the teaching positions of the X-axis and Y-axis based on the calculated position offset.

[0088] In step S36, the control unit CU controls the atmospheric transport robotic arm TR3 to transport the sensor wafer to a predetermined recycling position using the fork FK31. The predetermined recycling position may be the container C placed on the loading port LP1, the storage unit SR, etc. After the sensor wafer is recycled, the control unit CU terminates the process.

[0089] The above is an example of the position alignment of the atmospheric transport robot arm TR3 and the loading locking module LL1. However, the same method can be used to align the loading locking module LL2.

[0090] Referring to FIG13, another example of the alignment of the atmospheric transport robot arm TR3 with the loading locking module LL1 (step S20) will be described. In addition, at the beginning of step S30, the alignment of the atmospheric transport robot arm TR3, the aligner AN and the loading port LP1 (step S10) has been completed.

[0091] In step S31A, the control unit CU controls the atmospheric transport robot arm TR3 to place the sensor wafer at a predetermined position (e.g., the center position) of the loading locking module LL1 using the fork FK31. Furthermore, the control unit CU calculates the height position of the top surface of the fork FK31 when it contacts the bottom surface of the sensor wafer based on the detection value of the adsorption sensor V5 of the fork FK31. Additionally, the control unit CU corrects the Z-axis teaching position based on the calculated height position.

[0092] In step S32A, the control unit CU calculates the relative position of the loading locking module LL1 and the sensor wafer. For example, the control unit CU calculates the relative position of the loading locking module LL1 and the sensor wafer by detecting the detection values ​​of sensors PS1 to PS6 based on the position of the sensor wafer. However, the control unit CU may also calculate the relative position of the loading locking module LL1 and the sensor wafer based on the detection value of the electrostatic capacitance sensor CS installed on the sensor wafer.

[0093] In step S33A, the control unit CU determines whether the calculated relative position between the load locking module LL1 and the sensor wafer is within a reference value. If the relative position is within the reference value in step S33A, the control unit CU proceeds the process to step S37A. On the other hand, if the relative position is not within the reference value in step S33A, the control unit CU performs a correction of the taught position to bring the relative position within the reference value and proceeds the process to step S34A.

[0094] In step S34A, the control unit CU controls the atmospheric transport robot arm TR3 to obtain the sensor wafer from the loading locking module LL1 at the corrected position using the fork FK31.

[0095] In step S35A, the control unit CU controls the atmospheric transport robot arm TR3 to send the sensor wafer acquired by the fork unit FK31 back to the loading locking module LL1.

[0096] In step S36A, the control unit CU calculates the relative position of the loading locking module LL1 and the sensor wafer. For example, the control unit CU calculates the relative position of the loading locking module LL1 and the sensor wafer based on the detection values ​​of sensors PS1 to PS6, which are located on the sensor wafer. However, the control unit CU may also calculate the relative position of the loading locking module LL1 and the sensor wafer based on the detection value of the electrostatic capacitance sensor CS located on the sensor wafer. After calculating the relative position, the control unit CU returns the process to step S33A.

[0097] In step S37A, the control unit CU controls the atmospheric transport robotic arm TR3 to transport the sensor wafer to a predetermined position using the fork FK31. The predetermined retrieval position may be the container C placed on the loading port LP1, the storage unit SR, etc. After the sensor wafer is retrieved, the control unit CU terminates the process.

[0098] The above is another example of the position alignment between the atmospheric handling robot arm TR3 and the loading locking module LL1. However, the same method can be used to align the loading locking module LL2.

[0099] (Position Alignment of Vacuum Handling Robotic Arms) Referring to FIG14, an example of the position alignment method for vacuum handling robotic arms TR1 and TR2 will be described. As shown in FIG14, the position alignment method for vacuum handling robotic arms TR1 and TR2 firstly involves aligning the vacuum handling robotic arms TR1 and TR2 with the loading locking modules LL1 and LL2 in step S40. Next, in step S50, the vacuum handling robotic arms TR1 and TR2 are aligned with the program modules PM1 to PM12.

[0100] Referring to FIG15, an example of aligning the fork FK11 of the vacuum handling robot arm TR1 with the loading locking module LL1 (step S40) will be described. In addition, at the beginning of step S40, the sensor wafer system is set at a predetermined position (e.g., the center position) of the loading locking module LL1.

[0101] In step S41, the control unit CU controls the vacuum transport robot arm TR1 to use the fork FK11 to obtain the sensor wafer set at a predetermined position (e.g., the center position) of the loading locking module LL1.

[0102] In step S42, the control unit CU calculates the relative position of the fork portion FK11 and the sensor wafer. For example, the control unit CU calculates the relative position of the fork portion FK11 and the sensor wafer based on the detection value of the electrostatic capacitance sensor CS installed on the sensor wafer. However, the control unit CU may also calculate the relative position of the fork portion FK11 and the sensor wafer based on the detection values ​​of sensors PS1 to PS6 detected at the position of the sensor wafer.

[0103] In step S43, the control unit CU determines whether the calculated relative position between the fork portion FK11 and the sensor wafer is within a reference value. If the relative position is within the reference value in step S43, the control unit CU proceeds the process to step S47. On the other hand, if the relative position is not within the reference value in step S43, the control unit CU performs a correction of the taught position to bring the relative position within the reference value and proceeds the process to step S44.

[0104] In step S44, the control unit CU controls the vacuum transport robot arm TR1 to send the sensor wafer back to the loading locking module LL1 using the fork FK11.

[0105] In step S45, the control unit CU calculates the horizontal position offset between the fork part FK11 and the loading locking module LL1 based on the relative position detection result. Furthermore, the control unit CU corrects the X-axis teaching position and the Y-axis teaching position based on the calculated position offset.

[0106] In step S46, the control unit CU controls the vacuum transport robot arm TR1 to obtain the sensor wafer from the loading locking module LL1 at the corrected position using the fork FK11.

[0107] In step S47, the control unit CU controls the vacuum transport robotic arm TR1 to transport the sensor wafer to a predetermined recycling position using the fork FK11. The predetermined recycling position may be the loading locking module LL1, etc. After the sensor wafer is recycled, the control unit CU terminates the process.

[0108] The above is an example of the alignment of the fork FK11 of the vacuum handling robot arm TR1 with the loading locking module LL1. However, the loading locking module LL2 can also be aligned using the same method as the loading locking module LL1.

[0109] Referring to FIG16, an example of the alignment of the fork FK11 of the vacuum handling robot arm TR1 with the program module PM1 (step S50) will be described. In addition, at the beginning of step S50, the sensor wafer system is set at a predetermined position (e.g., the center position) of the loading locking module LL1.

[0110] In step S51, the control unit CU controls the vacuum transport robot arm TR1 to place the sensor wafer on the program module PM1 using the fork FK11.

[0111] In step S52, the control unit CU calculates the relative positions of the components (e.g., electrostatic chucks, edge rings) within the program module PM1 and the sensor wafer. For example, the control unit CU calculates the relative positions of the components within the program module PM1 and the sensor wafer based on the detection values ​​of sensors PS1 to PS6, which are located on the sensor wafer. However, the control unit CU may also calculate the relative positions of the components within the program module PM1 and the sensor wafer based on the detection values ​​of the electrostatic capacitance sensor CS located on the sensor wafer.

[0112] In step S53, the control unit CU determines whether the calculated relative position between the program module PM1 and the sensor wafer is within a reference value. If the relative position is within the reference value in step S53, the control unit CU proceeds the process to step S57. On the other hand, if the relative position is not within the reference value in step S53, the control unit CU performs a correction of the taught position to bring the relative position within the reference value and proceeds the process to step S54.

[0113] In step S54, the control unit CU controls the vacuum transport robot arm TR1 to obtain the sensor wafer from the program module PM1 at the corrected position using the fork FK11.

[0114] In step S55, the control unit CU controls the vacuum transport robot arm TR1 to send the sensor wafer obtained by the fork FK11 back to the program module PM1.

[0115] In step S56, the control unit CU calculates the relative positions of the components (e.g., electrostatic chucks, edge rings) within the program module PM1 and the sensor wafer. For example, the control unit CU calculates the relative positions of the components within the program module PM1 and the sensor wafer based on the detection values ​​of sensors PS1 to PS6, which are located on the sensor wafer. However, the control unit CU may also calculate the relative positions of the components within the program module PM1 and the sensor wafer based on the detection values ​​of the electrostatic capacitance sensor CS located on the sensor wafer. After calculating the relative positions, the control unit CU returns the process to step S53.

[0116] In step S57, the control unit CU controls the vacuum transport robotic arm TR1 to transport the sensor wafer to a predetermined recycling position using the fork FK11. The predetermined recycling position may be the loading locking module LL1, etc. After the sensor wafer is recycled, the control unit CU terminates the process.

[0117] The above is an example of the alignment of the fork FK11 of the vacuum handling robot arm TR1 with the program module PM1. However, the program modules PM2 to PM6 can also be aligned using the same method as the program module PM1.

[0118] As explained above, in the embodiment, the electrostatic capacitance sensor outputs the relative position of the fork and the substrate as configuration information to the control unit, and the control unit determines the teaching position of the fork relative to the substrate based on the configuration information. This allows for automatic adjustment of the alignment between the fork and the substrate.

[0119] In addition, although the position alignment method of the implementation is illustrated in Figures 8 to 16, the specific position alignment method is not necessarily limited to those shown in these flowcharts.

[0120] In the above embodiment, an embodiment using a capacitive sensor as a sensor for detecting the relative position of the fork and the object being transported is described; however, the type of sensor is not limited to this. For example, instead of a capacitive sensor, a non-contact sensor such as an optical sensor or a magnetic sensor, or a camera, may be used. An optical sensor may also be an LED (Light Emitting Diode) sensor. A camera may be, for example, a CCD (Charge Coupled Device) camera.

[0121] By using a camera, the positional accuracy of the substrate W or the end effector can be improved, and the effect of observing changes over time can be achieved. Furthermore, by using a camera, the entire interior of the plasma processing chamber 10 can be observed. The camera can be positioned at the same location as the electrostatic capacitance sensor, or at the root of the end effector. The camera can also be positioned on both the top and bottom surfaces of the end effector, or either one. When using a camera, the grooves or holes of the lower electrode (clamp) can be used as markers to align the end effector.

[0122] When the camera is set at the fork, the conditions for plasma treatment of the subsequent substrate W (e.g., the internal pressure of the plasma treatment chamber 10, the flow rate of the processing gas, or the power of the RF signal) can be controlled to prevent the deposits attached to the substrate W from peeling off and scattering during the plasma treatment of the subsequent substrate W.

[0123] Specifically, for example, when the previous substrate W is removed from the plasma processing chamber 10, the wall surface of the plasma processing chamber 10 or the surface of the substrate support portion 11 is photographed using a camera. Then, based on the amount of change between the deposit adhesion state inside the plasma processing chamber 10 obtained from the photograph and a predetermined reference deposit adhesion state, the conditions for subsequent plasma processing of the substrate W are optimized to prevent the peeling or scattering of deposits during subsequent plasma processing of the substrate W.

[0124] In addition, regarding the above-mentioned "deposit adhesion state as a reference", the photographic results taken when the substrate W was previously removed can be used, or the state arbitrarily determined when the plasma treatment chamber 10 is set can be used.

[0125] Furthermore, the camera's shooting surface can be appropriately determined according to the plasma processing conditions of the substrate W, and can be selectively shot from the side wall surface, top surface, or top and side surface of the substrate support 11 inside the plasma processing chamber 10. For example, when it is known that the surface on which the deposit is easily attached is known according to the plasma processing conditions, only the surface on which the deposit is easily attached can be shot, or multiple surfaces can be shot. In this case, when shooting the top surface of the plasma processing chamber 10, the camera should preferably be positioned so as not to interfere with the substrate W held on the fork.

[0126] In addition, there is no particular limitation on the number of cameras set at the fork. Multiple cameras can be set, or the configuration can be such that "one camera can capture multiple surfaces within the plasma processing chamber 10".

[0127] Furthermore, in the above explanation, the plasma processing conditions for the subsequent substrate W are changed according to the amount of change from the reference adhesion state. However, for example, when the amount of deposits inside the plasma processing chamber 10 is large, control can be implemented to perform a dry cleaning process, i.e., a deposit removal process, before the subsequent plasma processing of the substrate W. In addition, the dry cleaning conditions (e.g., the flow rate of the cleaning gas or the cleaning time) can be adjusted according to the amount of deposits.

[0128] In addition, the above description is based on the example of "taking pictures of the inside of the plasma processing chamber 10 when the previous substrate W is removed from the plasma processing chamber 10". However, it is also possible to take pictures of the deposits by letting the fork enter the inside of the plasma processing chamber 10 independently of the removal of the substrate W.

[0129] The above embodiments are described with respect to a semiconductor wafer as the substrate, but the present invention is not limited thereto. For example, the substrate may also be various substrates used in LCD (Liquid Crystal Display), FPD (Flat Panel Display), CD substrate, printed circuit board, etc.

[0130] <Second Embodiment> [Processing System] Referring to FIG1, an example of a processing system for the embodiment will be described. As shown in FIG1, the processing system PS is a system capable of performing various processes such as plasma processing on a substrate.

[0131] The processing system PS includes: vacuum transport modules TM1 and TM2, program modules PM1 to PM12, load locking modules LL1 and LL2, atmospheric transport module LM, alignment device AN, storage unit SR, etc.

[0132] Vacuum transport modules TM1 and TM2 each have a roughly quadrangular shape when viewed from above. Vacuum transport module TM1 connects to program modules PM1 to PM6 on two paired sides. On one of the other paired sides of vacuum transport module TM1, loading and locking modules LL1 and LL2 are connected, and on the other side, a channel (not shown) for connecting to vacuum transport module TM2 is connected. The side of vacuum transport module TM1 connected to loading and locking modules LL1 and LL2 has an angle corresponding to each of the two loading and locking modules LL1 and LL2. Vacuum transport module TM2 connects to program modules PM7 to PM12 on two paired sides. On one of the other paired sides of vacuum transport module TM2, a channel (not shown) for connecting to vacuum transport module TM1 is connected. Vacuum handling modules TM1 and TM2 are vacuum chambers with a vacuum environment, and vacuum handling robotic arms TR1 and TR2 are respectively installed inside them.

[0133] Vacuum handling robotic arms TR1 and TR2 are configured to rotate, extend, and lift freely. Vacuum handling robotic arms TR1 and TR2 transport objects according to motion instructions output by the control unit CU (described later). For example, vacuum handling robotic arm TR1 uses end effectors FK11 and FK12, respectively located at the front ends of arms AR11 and AR12, to hold the object being transported and transport it between loading and locking modules LL1 and LL2, program modules PM1 to PM6, and a channel (not shown in the figure). For example, vacuum handling robotic arm TR2 uses end effectors FK21 and FK22, respectively located at the front ends of arms AR21 and AR22, to hold the object being transported and transport it between program modules PM7 to PM12 and a channel (not shown in the figure). The end effector is also called a fork or pick-up device.

[0134] The object to be transported includes a substrate and consumable components. The substrate may be, for example, a semiconductor wafer or a sensor wafer. The consumable components are components that are replaceably installed within the program modules PM1 to PM12, and are consumed during various processes such as plasma processing performed within the program modules PM1 to PM12. The consumable components may include, for example, the annular assembly 112 described later, and components constituting the spray head 13.

[0135] Program modules PM1 to PM12 have a processing chamber and a platform (placement stage) disposed inside. After the substrate is placed on the platform, the internal pressure of program modules PM1 to PM12 is reduced, a processing gas is introduced, RF power is applied to generate plasma, and plasma processing is performed on the substrate using the plasma. Vacuum transport modules TM1 and TM2 and program modules PM1 to PM12 are separated by a gate valve G1 that can be opened and closed at will.

[0136] Loading locking modules LL1 and LL2 are configured between the vacuum transport module TM1 and the atmospheric transport module LM. Loading locking modules LL1 and LL2 have internal pressure variable chambers that can switch the internal pressure to vacuum or atmospheric pressure. Loading locking modules LL1 and LL2 have platforms configured inside. When a substrate is moved from the atmospheric transport module LM to the vacuum transport module TM1, loading locking modules LL1 and LL2 first maintain the internal pressure at atmospheric pressure, then receive the substrate from the atmospheric transport module LM, then depressurize the internal pressure, and then move the substrate into the vacuum transport module TM1. When a substrate is moved from the vacuum transport module TM1 to the atmospheric transport module LM, loading locking modules LL1 and LL2 first maintain the internal pressure at vacuum, then receive the substrate from the vacuum transport module TM1, then pressurize the internal pressure to atmospheric pressure, and then move the substrate into the atmospheric transport module LM. Loading locking modules LL1 and LL2 and vacuum transport module TM1 are separated by a gate valve G2 that can be opened and closed at will. Loading locking modules LL1 and LL2 and atmospheric transport module LM are separated by a gate valve G3 that can be opened and closed at will.

[0137] An atmospheric transport module LM is configured opposite to a vacuum transport module TM1. The atmospheric transport module LM may be, for example, an EFEM. The atmospheric transport module LM is cuboid in shape and has an FFU (Fan Filter Unit), which is an atmospheric transport chamber maintained at atmospheric pressure. Two loading locking modules LL1 and LL2 are connected to one side along the long side of the atmospheric transport module LM. Loading ports LP1 to LP4 are connected to the other side along the long side of the atmospheric transport module LM. Containers C for holding multiple (e.g., 25) substrates are placed on loading ports LP1 to LP4. Container C may be, for example, a FOUP (Fan Filter Unit). An atmospheric transport robotic arm TR3 for transporting the transported object is configured inside the atmospheric transport module LM.

[0138] The atmospheric transport robotic arm TR3 is configured to move along the long side of the atmospheric transport module LM, and is also configured to rotate, extend, and lift freely. The atmospheric transport robotic arm TR3 transports the transported object according to the action instructions output by the control unit CU (described later). For example, the atmospheric transport robotic arm TR3 uses an end effector FK31 located at the front end of the arm AR31 to hold the transported object, and transports the transported object between the loading ports LP1~LP4, the loading locking modules LL1, LL2, the aligner AN, and the storage unit SR.

[0139] The aligner AN is connected to one side along the short side of the atmospheric transport module LM. However, the aligner AN may also be connected to one side along the long side of the atmospheric transport module LM. Additionally, the aligner AN may be installed inside the atmospheric transport module LM. The aligner AN includes a support platform, an optical sensor (neither shown in the figure), etc. Here, "aligner" refers to a device for detecting the position of the transported object.

[0140] The support platform is a platform that can rotate about a center of an axis extending in the vertical direction, and is configured to support a substrate thereon. The support platform is rotated by a drive device (not shown in the figure). The drive device is controlled by a control unit CU described later. When the support platform rotates due to the power from the drive device, the substrate disposed on the support platform also rotates accordingly.

[0141] An optical sensor detects the edge of the substrate during substrate rotation. Based on the edge detection result, the optical sensor detects the offset of the angular position of the substrate notch (or other mark) relative to a reference angular position, and the offset of the substrate center position relative to the reference position. The optical sensor outputs the offset of the notch angular position and the offset of the substrate center position to the control unit CU described later. The control unit CU calculates the rotation amount of the rotating support stage to correct the notch angular position to the reference angular position based on the offset of the notch angular position. The control unit CU controls the drive device (not shown) to rotate the rotating support stage by the rotation amount. In this way, the angular position of the notch can be corrected to the reference angular position. In addition, the control unit CU controls the position of the end effector FK31 of the atmospheric transport robot arm TR3 when receiving the substrate from the alignment device AN based on the offset of the substrate center position, so that the center position of the substrate is aligned with a predetermined position on the end effector FK31 of the atmospheric transport robot arm TR3.

[0142] The storage unit SR is connected to a side along the long side of the atmospheric transport module LM. However, the storage unit SR may also be connected to a side along the short side of the atmospheric transport module LM. Alternatively, the storage unit SR may be installed inside the atmospheric transport module LM. The storage unit SR stores the transported object.

[0143] A control unit (CU) is provided in the processing system PS. The control unit (CU) may be, for example, a computer. The control unit (CU) includes: CPU, RAM, ROM, auxiliary memory, etc. The CPU operates according to the program stored in the ROM or auxiliary memory to control various parts of the processing system PS. For example, the control unit (CU) outputs action instructions to vacuum handling robotic arms TR1 and TR2, atmospheric handling robotic arm TR3, etc. The action instructions include instructions indicating the alignment of the end effectors FK11, FK12, FK21, FK22, and FK31, which are handling objects, with the handling location of the handling object.

[0144] [Plasma Processing System] Referring to FIG2, an example of a plasma processing system that can be used as any one of the program modules PM1 to PM12 will be described.

[0145] In one embodiment, a plasma processing system includes a plasma processing apparatus 1 and a plasma processing control unit 2. The plasma processing apparatus 1 includes a plasma processing chamber 10, a substrate support unit 11, and a plasma generation unit 12. The plasma processing chamber 10 has a plasma processing space. Furthermore, the plasma processing chamber 10 has at least one gas supply port for supplying at least one type of processing gas to the plasma processing space, and at least one gas outlet for discharging gas from the plasma processing space. The gas supply port is connected to the gas supply unit 20 (described later); the gas outlet is connected to the exhaust system 40 (described later). The substrate support unit 11 is disposed within the plasma processing space and has a substrate support surface for supporting a substrate.

[0146] The plasma generation unit 12 is configured to generate plasma from at least one type of processing gas supplied to the plasma processing space. The plasma formed in the plasma processing space can also be: capacitively coupled plasma, inductively coupled plasma, electron cyclotron resonance plasma, helical wave excited plasma, or surface wave plasma, etc. Furthermore, various types of plasma generation units, including AC plasma generation units and DC plasma generation units, can be used. In one embodiment, the AC signal (AC power) used by the AC plasma generation unit has a frequency in the range of 100 kHz to 10 GHz. Therefore, the AC signal includes RF signals and microwave signals. In one embodiment, the RF signal has a frequency in the range of 200 kHz to 150 MHz.

[0147] The plasma processing control unit 2 processes computer-executable commands, causing the plasma processing apparatus 1 to perform the various steps described herein. The plasma processing control unit 2 may be configured to "control the components of the plasma processing apparatus 1 to perform the various steps described herein." In one embodiment, part or all of the plasma processing control unit 2 may also be included in the plasma processing apparatus 1. The plasma processing control unit 2 may, for example, include a computer 2a. The computer 2a may, for example, include: a processing unit (CPU) 2a1, a memory unit 2a2, and a communication interface 2a3. The processing unit 2a1 may be configured to "perform various control actions according to the program stored in the memory unit 2a2." The memory unit 2a2 may also include: RAM, ROM, HDD, SSD, or a combination of such memory. The communication interface 2a3 may also communicate with the plasma processing apparatus 1 via a communication line such as a LAN.

[0148] Referring to FIG3, the following describes a construction example of a capacitor-coupled plasma processing apparatus, which is an example of a plasma processing apparatus 1.

[0149] A capacitively coupled plasma processing apparatus 1 includes a plasma processing chamber 10, a gas supply unit 20, a power supply 30, and an exhaust system 40. The plasma processing apparatus 1 also includes a substrate support unit 11 and a gas inlet unit. The gas inlet unit is configured to introduce at least one processing gas into the plasma processing chamber 10. The gas inlet unit includes a spray head 13. The substrate support unit 11 is disposed within the plasma processing chamber 10. The spray head 13 is disposed above the substrate support unit 11. In one embodiment, the spray head 13 constitutes at least a portion of the ceiling of the plasma processing chamber 10. The plasma processing chamber 10 has a plasma processing space 10s defined by the spray head 13, the sidewall 10a of the plasma processing chamber 10, and the substrate support unit 11. The sidewall 10a is grounded. The spray head 13 and the substrate support unit 11 are electrically insulated from the housing of the plasma processing chamber 10.

[0150] The substrate support portion 11 includes a body portion 111 and an annular assembly 112. The body portion 111 has a central region (substrate support surface) 111a for supporting a substrate (wafer) W, and an annular region (annular support surface) 111b for supporting the annular assembly 112. The annular region 111b of the body portion 111 surrounds the central region 111a of the body portion 111 when viewed from above. The substrate W is disposed on the central region 111a of the body portion 111; the annular assembly 112 is disposed on the annular region 111b of the body portion 111 in such a way that it surrounds the substrate W on the central region 111a of the body portion 111. In one embodiment, the body portion 111 includes a base and an electrostatic chuck. The base includes a conductive member. The conductive member of the base functions as a lower electrode. The electrostatic chuck is disposed on the base. The top surface of the electrostatic chuck has a substrate support surface 111a. The annular assembly 112 includes one or more annular members. At least one of the annular members is an edge ring. Although omitted in the figures, the substrate support portion 11 may also include a temperature control module configured to adjust at least one of the electrostatic chuck, the annular assembly 112, and the substrate to a target temperature. The temperature control module may also include a heater, a heat-conducting medium, a flow channel, or a combination of these components. A heat-conducting fluid such as brine or gas flows through the flow channel. Additionally, the substrate support portion 11 may also include a heat-conducting gas supply portion configured to supply heat-conducting gas between the back surface of the substrate W and the substrate support surface 111a.

[0151] The spray head 13 is configured to introduce at least one type of processing gas from the gas supply unit 20 into the plasma processing space 10s. The spray head 13 has at least one gas supply port 13a, at least one gas diffusion chamber 13b, and a plurality of gas inlets 13c. The processing gas supplied to the gas supply port 13a is introduced into the plasma processing space 10s through the gas diffusion chamber 13b and the plurality of gas inlets 13c. In addition, the spray head 13 includes a conductive member. The conductive member of the spray head 13 functions as an upper electrode. In addition, the gas inlet may include one or more side gas injection units (SGIs) in addition to the spray head 13, which are mounted on one or more openings formed in the sidewall 10a.

[0152] The gas supply unit 20 may also include at least one gas source 21 and at least one flow controller 22. In one embodiment, the gas supply unit 20 is configured to supply at least one type of processing gas from its respective gas source 21 to the spray head 13 via its respective flow controller 22. Each flow controller 22 may include, for example, a mass flow controller or a pressure-controlled flow controller. Furthermore, the gas supply unit 20 may also include at least one flow modulation device for modulating or pulsed the flow of at least one type of processing gas.

[0153] The power supply 30 includes an RF power supply 31 coupled to the plasma processing chamber 10 through at least one impedance matching circuit. The RF power supply 31 is configured to supply at least one RF signal (RF power), such as a source RF signal and a bias RF signal, to the conductive members of the substrate support portion 11 and / or the conductive members of the spray head 13. This allows plasma to be formed from at least one type of processing gas supplied to the plasma processing space 10s. Therefore, the RF power supply 31 can function as at least a part of the plasma generation portion 12. Furthermore, by supplying a bias RF signal to the conductive members of the substrate support portion 11, a bias potential can be generated on the substrate W, attracting ionic components in the formed plasma to the substrate W.

[0154] In one embodiment, the RF power supply 31 includes a first RF generation unit 31a and a second RF generation unit 31b. The first RF generation unit 31a is configured to "couple with the conductive members of the substrate support 11 and / or the conductive members of the spray head 13 through at least one impedance matching circuit, and generate a source RF signal (source RF power) for plasma generation." In one embodiment, the source RF signal has a frequency in the range of 13MHz to 150MHz. In one embodiment, the first RF generation unit 31a may also be configured to generate a plurality of source RF signals with different frequencies. The generated one or more source RF signals are supplied to the conductive members of the substrate support 11 and / or the conductive members of the spray head 13. The second RF generation unit 31b is configured to "couple with the conductive members of the substrate support 11 through at least one impedance matching circuit, and generate a bias RF signal (bias RF power)." In one embodiment, the bias RF signal has a lower frequency than the source RF signal. In another embodiment, the bias RF signal has a frequency in the range of 400 kHz to 13.56 MHz. In yet another embodiment, the second RF generation unit 31b can also be configured to generate a plurality of bias RF signals with different frequencies. The generated one or more bias RF signals are supplied to the conductive members of the substrate support unit 11. Furthermore, in various embodiments, at least one of the source RF signal and the bias RF signal can be pulsed.

[0155] Additionally, the power supply 30 may also include a DC power supply 32 coupled to the plasma processing chamber 10. The DC power supply 32 includes a first DC generation unit 32a and a second DC generation unit 32b. In one embodiment, the first DC generation unit 32a is configured to "connect to a conductive member of the substrate support 11 and generate a first DC signal". The generated first DC signal is applied to the conductive member of the substrate support 11. In one embodiment, the first DC signal may also be applied to other electrodes, such as electrodes within the electrostatic chuck. In one embodiment, the second DC generation unit 32b is configured to "connect to a conductive member of the spray head 13 and generate a second DC signal". The generated second DC signal is applied to the conductive member of the spray head 13. In various embodiments, the first and second DC signals may also be pulsed. In addition, the first and second DC generating units 32a and 32b can also be added to the RF power supply 31, or the first DC generating unit 32a can replace the second RF generating unit 31b.

[0156] The exhaust system 40 may be connected, for example, to a gas outlet 10e located at the bottom of the plasma processing chamber 10. The exhaust system 40 may also include a pressure regulating valve and a vacuum pump. The pressure within the plasma processing space 10s is adjusted using the pressure regulating valve. The vacuum pump may also include a turbomolecular pump, a dry pump, or a combination of such pumps.

[0157] (First Construction Example of Embodiment) The end effector 100 of the conveying device 170 of the first construction example of embodiment will be described. FIG17 is a top view of the end effector 100 of the conveying device 170 of the first construction example of embodiment.

[0158] Additionally, in the figures, for ease of explanation, an XYZ orthogonal coordinate system is sometimes used. Regarding the coordinate axes perpendicular to the paper plane of the diagram, a cross in the circle of the coordinate axis indicates that the direction of depth relative to the paper plane is positive, and a black dot in the circle indicates that the direction of the front of the paper plane is positive. However, this coordinate system is for illustrative purposes only and is not intended to limit the orientation of the end effector, etc.

[0159] In addition, in this invention, unless otherwise specified, the X-axis and Y-axis are axes parallel to the mounting surface of the end effector. The Y-axis is the axis in the direction in which the front end of the end effector extends. The X-axis is the axis perpendicular to the Y-axis. The Z-axis is the axis in the direction perpendicular to the X-axis and Y-axis. In addition, sometimes the Z-axis direction is used as the up-down direction.

[0160] The transport device 170, for example, refers to at least one of the vacuum transport robot arm TR1, the vacuum transport robot arm TR2, and the atmospheric transport robot arm TR3. The transport device 170 transports the substrate W and consumable parts disposed within the plasma processing apparatus 1 (substrate processing apparatus).

[0161] The conveying device 170 includes: an end effector 100, an arm 160, and a control device 150.

[0162] The end effector 100, for example, refers to at least one of end effector FK11, end effector FK12, end effector FK22, and end effector FK31. The arm 160, for example, is any one of the arms AR11, AR12, AR21, AR22, and AR31 corresponding to the end effector 100. The end effector 100 transports an object under at least one of atmospheric pressure and vacuum conditions.

[0163] Control device 150, control arm 160. Furthermore, control device 150 is connected to electrostatic capacitance sensors 121, 122, and 123, which will be described later. Control device 150 determines the positional relationship between the substrate W and the end effector 100 based on the results measured by each of the electrostatic capacitance sensors 121, 122, and 123. Then, based on the measured positional relationship between the substrate W and the end effector 100, control device 150 corrects the positional deviation when the position of the substrate W deviates from the desired position.

[0164] The end effector 100 carries a substrate and a consumable part disposed in the plasma processing apparatus 1. The consumable part disposed in the plasma processing apparatus 1 is, for example, an annular member of the annular assembly 112.

[0165] The end effector 100 has a roughly U-shaped shape when viewed from above. The end effector 100 has a symmetrical shape when viewed from above with respect to the central axis AX passing through the center in the X-axis direction.

[0166] The end effector 100 has a base 101, a front end portion 102, and a front end portion 103. The front end portion 102 and the front end portion 103 are each configured to extend from the base 101 in the +Y axis direction. The front end portion 102 and the front end portion 103 are each shorter in the X-axis direction and longer in the Y-axis direction, and are generally rectangular in shape when viewed from above. The front end portion 102 is configured to be separated from the front end portion 103 in the +X axis direction. The end effector 100 is, for example, formed of ceramic.

[0167] The end effector 100 has a mounting surface 100S for mounting a substrate and a consumable part. The end effector 100 includes, on the mounting surface 100S: a capacitance sensor 121, a capacitance sensor 122, and a capacitance sensor 123, and a plurality of pads 140 for protecting the substrate W from contact with the mounting surface 100S.

[0168] Capacitive capacitance sensors 121, 122, and 123 each have an electrode that is approximately circular in shape when viewed from above. Each of the three sensors measures the capacitance between its respective electrode and the substrate W mounted on the mounting surface 100S. That is, each of the three sensors measures the overlap between its respective electrode and the substrate W when viewed from above.

[0169] The electrostatic capacitance sensor 121 is disposed at the center of the base 101 in the X-axis direction. That is, the electrostatic capacitance sensor 121 is disposed on the central axis AX. The electrostatic capacitance sensor 122 is disposed at the front end of the front end 102 on the +Y side in the Y-axis direction. The electrostatic capacitance sensor 123 is disposed at the front end of the front end 103 on the +Y side in the Y-axis direction.

[0170] The positions of the electrostatic capacitance sensors 121, 122, and 123 will be described. Figure 18 is an explanatory diagram of the relative positions of the end effector 100 and the substrate W of the conveying device 170 in the first embodiment. Figure 18 also shows the state in which the substrate W is placed at a reference position with no positional offset relative to the end effector 100.

[0171] The electrostatic capacitance sensor 121, electrostatic capacitance sensor 122 and electrostatic capacitance sensor 123 are each disposed at a position in which "when the substrate W is placed at the reference position, the electrodes of the electrostatic capacitance sensor 121, electrostatic capacitance sensor 122 and electrostatic capacitance sensor 123 are covered by the substrate W about half when viewed from above".

[0172] Capacitance sensors 121, 122, and 123 are each connected to the control device 150. When receiving the substrate W, the control device 150 calculates the positional offset of the substrate W relative to the reference position where the end effector 100 places the substrate, based on the capacitance measured by each of the capacitance sensors 121, 122, and 123. For example, the control device 150 determines the center position of the substrate W. Then, it calculates the positional offset of the substrate W from the offset of this center position relative to the reference position. Furthermore, the capacitance sensors 121, 122, and 123 can also be used for measurement during substrate W handling.

[0173] When the substrate W is located at the reference position, the capacitance detected by each of the capacitance sensors 121, 122, and 123 is equal. On the other hand, when the substrate W deviates from the reference position, the capacitance detected by the capacitance sensor located in the position deviation direction increases. Therefore, the center position of the substrate W is determined from the capacitance detected by each of the capacitance sensors 121, 122, and 123.

[0174] When the calculated position offset is greater than the expected range, that is, when the substrate W deviates from the expected position, the control device 150 corrects the position offset of the substrate W and then places the substrate W again.

[0175] Furthermore, the number of electrostatic capacitance sensors is not limited to three; for example, four or more may be provided. That is, the end effector 100 may also have electrostatic capacitance sensors disposed at at least two locations. In addition, electrostatic capacitance sensors may also be disposed at at least three locations on the same circumference of the end effector 100.

[0176] Furthermore, the object to be transported by the end effector 100 is not limited to the substrate W. For example, the annular member of the annular assembly 112 or the upper electrode (e.g., the spray head 13) may also be the object to be transported. FIG19 is an explanatory diagram of the relative positions of the end effector 100 and the annular member RNG of the transport device 170 of the first embodiment.

[0177] The inner diameter of the annular member RNG of the annular assembly 112 is approximately equal to the outer diameter of the substrate W. Therefore, as shown in FIG19, the end effector 100 can measure the positional offset of the annular member RNG.

[0178] [Function and Effect] According to the first structural example of the embodiment, the end effector 100 of the conveying device 170 can detect the positional offset of the substrate W relative to the end effector 100. By detecting the positional offset of the substrate W relative to the end effector 100 and correcting the position of the substrate W, the positional accuracy of the end effector 100 when conveying the substrate W can be improved. By improving the positional accuracy of the end effector 100 when conveying the substrate W, the conveying accuracy can be improved, and the performance of the conveying device can be improved.

[0179] Furthermore, the end effector 100 of the conveying device 170 according to the first embodiment can immediately correct the mounting position of the substrate W. Therefore, the reliability of the conveying device can be improved.

[0180] Furthermore, according to the first embodiment of the conveying device 170, the end effector 100 can measure the positional offset of each substrate W and correct the mounting position when processing a plurality of substrates W. Therefore, the performance of the conveying device can be improved.

[0181] Furthermore, if the end effector 100 of the conveying device 170 according to the first construction example of the embodiment can correct the positional deviation, then the high-precision teaching of the conveying device is not required, and the teaching can be automated. Therefore, manpower can be saved. In addition, production efficiency can be improved.

[0182] Furthermore, the end effector 100 of the conveying device 170 according to the first construction example of the embodiment can correct positional deviations, thus making it applicable to conveying devices with poor repetitive conveying characteristics. Therefore, the cost of the conveying device can be reduced.

[0183] Furthermore, if the end effector 100 of the first construction example of the implementation state is used, the position offset can be corrected, so that the temperature change of the object and the shape change caused by consumption can be tracked.

[0184] For example, even if the center position of the annular member of the annular assembly 112 can be determined using a sensor wafer or the like, if the position of the end effector and the substrate W deviates from the reference position, it is still impossible to place the substrate W at the center position of the annular member. If the end effector 100 of the first embodiment is used, the positional offset of the substrate W relative to the end effector 100 can be corrected, so the substrate W can be placed at the center position of the annular member of the annular assembly 112.

[0185] Furthermore, even when a robotic arm is taught using a sensor wafer, environmental changes (e.g., temperature) or differences between the sensor wafer and the substrate W being transported may prevent the substrate W from being transported with the same precision as during the teaching process. However, with the end effector 100 of the first embodiment, the positional offset of the substrate W relative to the end effector 100 can be corrected, thus enabling the transport of the substrate W with higher positional precision.

[0186] (Second Construction Example of Embodiment) Next, the end effector 200 of the conveying device 270 in the second construction example of embodiment will be described. FIG20 is a top view of the end effector 200 of the conveying device 270 in the second construction example of embodiment. The end effector 200 replaces the electrostatic capacitance sensor 121, electrostatic capacitance sensor 122 and electrostatic capacitance sensor 123 of the end effector 100 of the conveying device 170 in the first construction example, and has optical sensors 222 and 223.

[0187] The conveying device 270 includes: an end effector 200, an arm 160, and a control device 250.

[0188] Optical sensors 222 and 223 each optically detect the presence of substrate W on their respective upper sides. Optical sensors 222 and 223 are each connected to control device 250.

[0189] For example, optical sensor 222 and optical sensor 223 are each image sensors. As image sensors, optical sensor 222 and optical sensor 223 each capture images of their respective upper surfaces. Then, control device 250 determines from the captured images whether a substrate W exists on the upper surfaces of optical sensor 222 and optical sensor 223.

[0190] Additionally, optical sensors 222 and 223 are, for example, each a distance sensor. As distance sensors, optical sensors 222 and 223 each measure the distance to an object located above each of their respective optical sensors. Then, the control device 250 determines, based on the measured distance, whether a substrate W exists above each of the optical sensors 222 and 223.

[0191] Furthermore, optical sensors 222 and 223 are, for example, reflective light intensity sensors. As reflective light intensity sensors, each of optical sensors 222 and 223 is illuminated with light, and the intensity of the light reflected from the object located above it is measured. Then, the control device 250 determines, based on the measured light intensity, whether a substrate W is present on the upper side of each of the optical sensors 222 and 223.

[0192] In addition, optical sensor 222 and optical sensor 223 may each be LED sensors, for example.

[0193] The method for measuring position offset will be explained. Figures 21 to 23 are explanatory diagrams for measuring the position offset of the substrate by the end effector 200 of the conveying device 270 in the second construction example of the embodiment.

[0194] The end effector 200 is moved along the arrow AM on the underside of the substrate W mounted on the substrate support 11. As shown in FIG21, initially, the substrate W is not located above the optical sensors 222 and 223 respectively. Therefore, the optical sensors 222 and 223 do not detect the substrate W.

[0195] If the end effector 200 is moved along the arrow AM, as shown in FIG22, the substrate W is located above the optical sensors 222 and 223 respectively. Therefore, the optical sensors 222 and 223 each detect the substrate W.

[0196] If the end effector 200 is moved along the arrow AM, as shown in FIG23, the substrate W is not located above the optical sensors 222 and 223 respectively. Therefore, the optical sensors 222 and 223 do not detect the substrate W.

[0197] Then, the control device 250 uses information about the presence position of the substrate W detected by the optical sensors 222 and 223 respectively to detect the positional offset of the substrate W relative to the end effector 200. For example, the control device 250 determines the center position of the substrate W. Then, the control device 250 calculates the positional offset of the substrate W using the offset of the center position relative to the reference position.

[0198] The control device 250 can, for example, determine the center position of the substrate W from the information of the endpoints of the substrate W detected by each of the optical sensors 222 and 223. The endpoints of the substrate W detected by each of the optical sensors 222 and 223 are determined, totaling four. The center coordinates of the substrate W can also be determined from the coordinates of these four endpoints, for example, using the least squares method. Alternatively, three endpoints can be extracted from the four endpoints, and the center coordinates of the circle passing through these three endpoints can be used as the center coordinates of the substrate W. Furthermore, the method for determining the center coordinates is not limited to the above; conventional methods can also be applied.

[0199] In addition, the above description is for the state of moving along the arrow AM, that is, the state of placing (receiving) the substrate W. However, the position of the substrate W can also be measured when moving in the opposite direction to the arrow AM, that is, when the end effector 200 is put on standby or retreated after placing the substrate W.

[0200] Furthermore, optical sensors 222 and 223 are not limited to the substrate W, but can also detect the position of consumable parts (e.g., the annular member of the annular assembly 112) disposed within the plasma processing apparatus 1 (substrate processing apparatus). Additionally, the number of optical sensors is not limited to two; for example, more than two may be provided. That is, optical sensors may be disposed at at least two locations.

[0201] [Function and Effect] In addition to the functions of the end effector 100 in the first embodiment, the end effector 200 of the second embodiment can detect the position of the transported object after it is placed on the mounting part such as the substrate support 11.

[0202] (Third Construction Example of Embodiment) Next, the end effector 300 of the conveying device 370 in the third construction example of embodiment will be described. Figure 24 is a bottom view of the end effector 300 of the conveying device 370 in the third construction example of embodiment. The end effector 300 is the same as the end effector 100 of the conveying device 170 in the first construction example of embodiment, and further includes a capacitance sensor 331, a capacitance sensor 332, and a capacitance sensor 333. The top view of the end effector 300 is the same as that in Figure 17, so it is omitted.

[0203] The conveying device 370 includes: an end effector 300, an arm 160, and a control device 350.

[0204] The end effector 300 has a capacitive capacitance sensor 331, a capacitive capacitance sensor 332, and a capacitive capacitance sensor 333 on its bottom surface 300S1 opposite to the mounting surface. That is, the end effector 300 has a capacitive capacitance sensor 331, a capacitive capacitance sensor 332, and a capacitive capacitance sensor 333 on its underside.

[0205] Capacitive capacitance sensors 331, 332, and 333 each have an electrode that is approximately circular in shape when viewed from above. Each of the three sensors measures the capacitance between its respective electrode and the substrate W located on the underside of the bottom surface 300S1. Each of the three sensors also measures the overlap between its respective electrode and the substrate W when viewed from above.

[0206] A capacitance sensor 331 is disposed at the center of the base 101 in the X-axis direction. A capacitance sensor 331 is disposed at a position corresponding to capacitance sensor 121. A capacitance sensor 332 is disposed at the front end of the front end 102 on the +Y side in the Y-axis direction. A capacitance sensor 332 is disposed at a position corresponding to capacitance sensor 122. A capacitance sensor 333 is disposed at the front end of the front end 103 on the +Y side in the Y-axis direction. A capacitance sensor 333 is disposed at a position corresponding to capacitance sensor 123.

[0207] Electrostatic capacitance sensors 331, 332, and 333 detect the position of the substrate W after it has been placed on a mounting object (e.g., substrate support 11). By detecting the position of the substrate W after placement, it is possible to determine whether the substrate W has been placed in the correct position. For example, if the substrate W is placed but misaligned, the control device 350 corrects the position of the substrate W again and then places it back in place.

[0208] In addition, the electrostatic capacitance sensor 331, electrostatic capacitance sensor 332 and electrostatic capacitance sensor 333 are not limited to the substrate W, and can also detect the position of consumable parts (e.g., the annular member of the annular assembly 112) disposed in the plasma processing apparatus 1 (substrate processing apparatus).

[0209] In addition, electrostatic capacitance sensor 331, electrostatic capacitance sensor 332 and electrostatic capacitance sensor 333 are each examples of the second sensor.

[0210] [Function and Effect] In addition to the functions of the end effector 100 in the first embodiment, the end effector 300 of the third embodiment can detect the position of the transported object after it is placed on the mounting part such as the substrate support 11.

[0211] Alternatively, the electrostatic capacitance sensor 331, electrostatic capacitance sensor 332, and electrostatic capacitance sensor 333 may be replaced by an optical sensor as described in the second construction example of the embodiment. Furthermore, the sensor on the mounting surface is not limited to an electrostatic capacitance sensor; it may also be an optical sensor.

[0212] In the above embodiment, the calculation of the positional relationship between the substrate and the end effector is performed by the control device. However, the calculation of the positional relationship between the substrate and the end effector is not limited to the control device. For example, the control unit CU can also calculate the relative position (positional relationship) with the transported object based on the detection results of at least one of the electrostatic capacitance sensor and the optical sensor installed on the end effector of the transport device (transport robot arm). In addition, the control unit CU can also determine the teaching position of the transport device (transport robot arm) based on the calculated relative position. Furthermore, an action instruction can be output to the transport device (transport robot arm) so that the end effector is positioned at the teaching position determined by the control unit CU. In addition, the system having the control unit CU and the transport device is called a transport system.

[0213] In the above embodiments, the description pertains to "using a capacitive sensor and an optical sensor as sensors for detecting the relative position of the fork and the transported object," but the type of sensor is not limited to these. For example, a non-contact sensor such as a magnetic sensor may be used instead of a capacitive sensor or an optical sensor. Alternatively, as in the first embodiment, a camera may be used as the sensor.

[0214] The above embodiments are described with respect to a semiconductor wafer as the substrate, but the present invention is not limited thereto. For example, the substrate may also be various substrates used in LCDs, FPDs, CD substrates, printed circuit boards, etc.

[0215] <Third Embodiment> [Processing System】 Referring to FIG1, an example of a processing system for the embodiment will be described. As shown in FIG1, the processing system PS is a system capable of performing various processes such as plasma processing on the substrate.

[0216] The processing system PS includes: vacuum transport modules TM1 and TM2, program modules PM1 to PM12, load locking modules LL1 and LL2, atmospheric transport module LM, alignment device AN, storage unit SR, etc.

[0217] Vacuum transport modules TM1 and TM2 each have a roughly quadrangular shape when viewed from above. Vacuum transport module TM1 connects to program modules PM1 to PM6 on two paired sides. On one of the other paired sides of vacuum transport module TM1, loading and locking modules LL1 and LL2 are connected, while on the other side, a channel (not shown) for connecting to vacuum transport module TM2 is connected. The side of vacuum transport module TM1 connected to loading and locking modules LL1 and LL2 has an angle corresponding to each module. Vacuum transport module TM2 connects to program modules PM7 to PM12 on two paired sides. On one of the other paired sides of vacuum transport module TM2, a channel (not shown) for connecting to vacuum transport module TM1 is connected. Vacuum handling modules TM1 and TM2 are vacuum chambers with a vacuum environment, and vacuum handling robotic arms TR1 and TR2 are respectively installed inside them.

[0218] Vacuum handling robotic arms TR1 and TR2 are configured to rotate, extend, and lift freely. Vacuum handling robotic arms TR1 and TR2 transport objects according to action instructions output by the control unit CU (described later). For example, vacuum handling robotic arm TR1 uses end effectors FK11 and FK12, respectively located at the front ends of arms AR11 and AR12, to hold the object being transported and transport it between loading and locking modules LL1 and LL2, program modules PM1 to PM6, and a channel (not shown in the figure). For example, vacuum handling robotic arm TR2 uses end effectors FK21 and FK22, respectively located at the front ends of arms AR21 and AR22, to hold the object being transported and transport it between program modules PM7 to PM12 and a channel (not shown in the figure). The end effector is also called a fork or pick-up device.

[0219] The object to be transported includes a substrate and consumable components. The substrate may be, for example, a semiconductor wafer or a sensor wafer. The consumable components are components that are replaceably installed within the program modules PM1 to PM12, and are consumed during various processes such as plasma processing performed within the program modules PM1 to PM12. Consumable components may include, for example, the annular assembly 112 described later, and components constituting the spray head 13.

[0220] Program modules PM1~PM12 have a processing chamber and a platform (placement stage) disposed inside. After the substrate is placed on the platform, the internal pressure of program modules PM1~PM12 is reduced, a processing gas is introduced, RF power is applied to generate plasma, and plasma processing is performed on the substrate using the plasma. Vacuum transport modules TM1, TM2 and program modules PM1~PM12 are separated by a gate valve G1 that can be opened and closed at will.

[0221] Loading locking modules LL1 and LL2 are configured between the vacuum transport module TM1 and the atmospheric transport module LM. Loading locking modules LL1 and LL2 have internal pressure variable chambers that can switch the internal pressure to vacuum or atmospheric pressure. Loading locking modules LL1 and LL2 have platforms configured inside. When a substrate is moved from the atmospheric transport module LM to the vacuum transport module TM1, loading locking modules LL1 and LL2 first maintain the internal pressure at atmospheric pressure, then receive the substrate from the atmospheric transport module LM, then depressurize the internal pressure, and then move the substrate into the vacuum transport module TM1. When a substrate is moved from the vacuum transport module TM1 to the atmospheric transport module LM, loading locking modules LL1 and LL2 first maintain the internal pressure at vacuum, then receive the substrate from the vacuum transport module TM1, then pressurize the internal pressure to atmospheric pressure, and then move the substrate into the atmospheric transport module LM. Loading locking modules LL1 and LL2 and vacuum transport module TM1 are separated by a gate valve G2 that can be opened and closed at will. Loading locking modules LL1 and LL2 and atmospheric transport module LM are separated by a gate valve G3 that can be opened and closed at will.

[0222] An atmospheric transport module LM is configured opposite to a vacuum transport module TM1. The atmospheric transport module LM may be, for example, an EFEM. The atmospheric transport module LM is cuboid in shape and has an FFU (Fan Filter Unit), which is an atmospheric transport chamber maintained at atmospheric pressure. Two loading locking modules LL1 and LL2 are connected to one side along the long side of the atmospheric transport module LM. Loading ports LP1 to LP4 are connected to the other side along the long side of the atmospheric transport module LM. Containers C for holding multiple (e.g., 25) substrates are placed on loading ports LP1 to LP4. Container C may be, for example, a FOUP (Fan Filter Unit). An atmospheric transport robotic arm TR3 for transporting the transported object is configured inside the atmospheric transport module LM.

[0223] The atmospheric transport robotic arm TR3 is configured to move along the long side of the atmospheric transport module LM, and is also configured to rotate, extend, and lift freely. The atmospheric transport robotic arm TR3 transports the transported object according to the action instructions output by the control unit CU described later. For example, the atmospheric transport robotic arm TR3 uses an end effector FK31 located at the front end of the arm AR31 to hold the transported object, and transports the transported object between the loading ports LP1~LP4, the loading locking modules LL1, LL2, the aligner AN, and the storage unit SR.

[0224] The aligner AN is connected to one side along the short side of the atmospheric transport module LM. However, the aligner AN can also be connected to one side along the long side of the atmospheric transport module LM. Furthermore, the aligner AN can also be installed inside the atmospheric transport module LM. The aligner AN includes a support platform, an optical sensor (neither shown in the figure), etc. Here, "aligner" refers to a device for detecting the position of the transported object.

[0225] The support platform is a platform that can rotate about a center of an axis extending in the vertical direction, and is configured to support a substrate thereon. The support platform is rotated by a drive device (not shown in the figure). The drive device is controlled by a control unit CU described later. When the support platform rotates due to the power from the drive device, the substrate disposed on the support platform also rotates accordingly.

[0226] An optical sensor detects the edge of the substrate during substrate rotation. Based on the edge detection result, the optical sensor detects the offset of the angular position of the substrate notch (or other mark) relative to a reference angular position, and the offset of the substrate center position relative to the reference position. The optical sensor outputs the offset of the notch angular position and the offset of the substrate center position to the control unit CU described later. The control unit CU calculates the rotation amount of the rotating support stage to correct the notch angular position to the reference angular position based on the offset of the notch angular position. The control unit CU controls the drive device (not shown) to rotate the rotating support stage by the rotation amount. In this way, the angular position of the notch can be corrected to the reference angular position. In addition, the control unit CU controls the position of the end effector FK31 of the atmospheric transport robot arm TR3 when receiving the substrate from the alignment device AN based on the offset of the substrate center position, so that the center position of the substrate is aligned with a predetermined position on the end effector FK31 of the atmospheric transport robot arm TR3.

[0227] The storage unit SR is connected to a side along the long side of the atmospheric transport module LM. However, the storage unit SR may also be connected to a side along the short side of the atmospheric transport module LM. Alternatively, the storage unit SR may be installed inside the atmospheric transport module LM. The storage unit SR stores the transported object.

[0228] A control unit (CU) is provided in the processing system PS. The control unit CU may be, for example, a computer. The control unit CU includes: CPU, RAM, ROM, auxiliary memory, etc. The CPU operates according to the program stored in the ROM or auxiliary memory to control various parts of the processing system PS. For example, the control unit CU outputs action instructions to vacuum handling robotic arms TR1 and TR2, atmospheric handling robotic arm TR3, etc. The action instructions include indications of the alignment between the end effectors FK11, FK12, FK21, FK22, and FK31 that are handling the object and the handling location of the object.

[0229] [Plasma Processing System] Referring to FIG2, an example of a plasma processing system that can be used as any one of the program modules PM1 to PM12 will be described.

[0230] In one embodiment, a plasma processing system includes a plasma processing apparatus 1 and a plasma processing control unit 2. The plasma processing apparatus 1 includes a plasma processing chamber 10, a substrate support unit 11, and a plasma generation unit 12. The plasma processing chamber 10 has a plasma processing space. Furthermore, the plasma processing chamber 10 has at least one gas supply port for supplying at least one type of processing gas to the plasma processing space, and at least one gas outlet for discharging gas from the plasma processing space. The gas supply port is connected to the gas supply unit 20 (described later); the gas outlet is connected to the exhaust system 40 (described later). The substrate support unit 11 is disposed within the plasma processing space and has a substrate support surface for supporting a substrate.

[0231] The plasma generation unit 12 is configured to generate plasma from at least one type of processing gas supplied to the plasma processing space. The plasma formed in the plasma processing space can be capacitively coupled plasma, inductively coupled plasma, electron cyclotron resonance plasma, helical wave excited plasma, or surface wave plasma, etc. Furthermore, various types of plasma generation units, including AC plasma generation units and DC plasma generation units, can be used. In one embodiment, the AC signal (AC power) used by the AC plasma generation unit has a frequency in the range of 100 kHz to 10 GHz. Therefore, the AC signal includes RF signals and microwave signals. In one embodiment, the RF signal has a frequency in the range of 200 kHz to 150 MHz.

[0232] The plasma processing control unit 2 processes computer-executable commands, which cause the plasma processing apparatus 1 to perform the various steps described herein. The plasma processing control unit 2 may be configured to "control the components of the plasma processing apparatus 1 to perform the various steps described herein." In one embodiment, part or all of the plasma processing control unit 2 may also be included in the plasma processing apparatus 1. The plasma processing control unit 2 may, for example, include a computer 2a. The computer 2a may, for example, include: a processing unit (CPU) 2a1, a memory unit 2a2, and a communication interface 2a3. The processing unit 2a1 may be configured to "perform various control actions according to the program stored in the memory unit 2a2." The memory unit 2a2 may also include: RAM, ROM, HDD, SSD, or a combination of such memory. The communication interface 2a3 may also communicate with the plasma processing apparatus 1 via a communication line such as a LAN.

[0233] Referring to FIG3, the following describes a construction example of a capacitor-coupled plasma processing apparatus, which is an example of a plasma processing apparatus 1.

[0234] A capacitively coupled plasma processing apparatus 1 includes: a plasma processing chamber 10, a gas supply unit 20, a power supply 30, and an exhaust system 40. The plasma processing apparatus 1 also includes a substrate support unit 11 and a gas inlet unit. The gas inlet unit is configured to introduce at least one processing gas into the plasma processing chamber 10. The gas inlet unit includes a spray head 13. The substrate support unit 11 is disposed within the plasma processing chamber 10. The spray head 13 is disposed above the substrate support unit 11. In one embodiment, the spray head 13 constitutes at least a portion of the ceiling of the plasma processing chamber 10. The plasma processing chamber 10 has a plasma processing space 10s defined by the spray head 13, the sidewall 10a of the plasma processing chamber 10, and the substrate support unit 11. The sidewall 10a is grounded. The spray head 13 and the substrate support unit 11 are electrically insulated from the housing of the plasma processing chamber 10.

[0235] The substrate support portion 11 includes a body portion 111 and an annular assembly 112. The body portion 111 has a central region (substrate support surface) 111a for supporting a substrate (wafer) W, and an annular region (annular support surface) 111b for supporting the annular assembly 112. The annular region 111b of the body portion 111 surrounds the central region 111a of the body portion 111 when viewed from above. The substrate W is disposed on the central region 111a of the body portion 111; the annular assembly 112 is disposed on the annular region 111b of the body portion 111 in such a way that it surrounds the substrate W on the central region 111a of the body portion 111. In one embodiment, the body portion 111 includes a base and an electrostatic chuck. The base includes a conductive member. The conductive member of the base functions as a lower electrode. The electrostatic chuck is disposed on the base. The top surface of the electrostatic chuck has a substrate support surface 111a. The annular assembly 112 includes one or more annular members. At least one of the annular members is an edge ring. Although omitted in the figures, the substrate support portion 11 may also include a temperature control module configured to adjust at least one of the electrostatic chuck, the annular assembly 112, and the substrate to a target temperature. The temperature control module may also include a heater, a heat-conducting medium, a flow channel, or a combination of these components. A heat-conducting fluid such as brine or gas flows through the flow channel. Additionally, the substrate support portion 11 may also include a heat-conducting gas supply portion configured to supply heat-conducting gas between the back surface of the substrate W and the substrate support surface 111a.

[0236] The spray head 13 is configured to introduce at least one type of processing gas from the gas supply unit 20 into the plasma processing space 10s. The spray head 13 has at least one gas supply port 13a, at least one gas diffusion chamber 13b, and a plurality of gas inlets 13c. The processing gas supplied to the gas supply port 13a is introduced into the plasma processing space 10s through the gas diffusion chamber 13b and the plurality of gas inlets 13c. In addition, the spray head 13 includes a conductive member. The conductive member of the spray head 13 functions as an upper electrode. In addition, the gas inlet unit, in addition to the spray head 13, may also include one or more side gas injection units (SGIs) mounted on one or more openings formed in the sidewall 10a.

[0237] The gas supply unit 20 may also include at least one gas source 21 and at least one flow controller 22. In one embodiment, the gas supply unit 20 is configured to supply at least one type of processing gas from its respective gas source 21 to the spray head 13 via its respective flow controller 22. Each flow controller 22 may include, for example, a mass flow controller or a pressure-controlled flow controller. Furthermore, the gas supply unit 20 may also include at least one flow modulation device for modulating or pulsed the flow of at least one type of processing gas.

[0238] The power supply 30 includes an RF power supply 31 coupled to the plasma processing chamber 10 through at least one impedance matching circuit. The RF power supply 31 is configured to supply at least one RF signal (RF power), such as a source RF signal and a bias RF signal, to the conductive members of the substrate support 11 and / or the conductive members of the spray head 13. This allows plasma to be formed from at least one processing gas supplied to the plasma processing space 10s. Therefore, the RF power supply 31 can function as at least a part of the plasma generation section 12. Furthermore, by supplying a bias RF signal to the conductive members of the substrate support 11, a bias potential can be generated on the substrate W, attracting ionic components in the formed plasma to the substrate W.

[0239] In one embodiment, the RF power supply 31 includes a first RF generation unit 31a and a second RF generation unit 31b. The first RF generation unit 31a is configured to "couple with the conductive members of the substrate support 11 and / or the conductive members of the spray head 13 through at least one impedance matching circuit, and generate a source RF signal (source RF power) for plasma generation." In one embodiment, the source RF signal has a frequency in the range of 13MHz to 150MHz. In one embodiment, the first RF generation unit 31a may also be configured to generate a plurality of source RF signals with different frequencies. The generated one or more source RF signals are supplied to the conductive members of the substrate support 11 and / or the conductive members of the spray head 13. The second RF generation unit 31b is configured to "couple with the conductive members of the substrate support 11 through at least one impedance matching circuit, and generate a bias RF signal (bias RF power)." In one embodiment, the bias RF signal has a lower frequency than the source RF signal. In another embodiment, the bias RF signal has a frequency in the range of 400 kHz to 13.56 MHz. In yet another embodiment, the second RF generation unit 31b can also be configured to generate a plurality of bias RF signals with different frequencies. The generated one or more bias RF signals are supplied to the conductive members of the substrate support unit 11. Furthermore, in various embodiments, at least one of the source RF signal and the bias RF signal can be pulsed.

[0240] Additionally, the power supply 30 may also include a DC power supply 32 coupled to the plasma processing chamber 10. The DC power supply 32 includes a first DC generation unit 32a and a second DC generation unit 32b. In one embodiment, the first DC generation unit 32a is configured to "connect to a conductive member of the substrate support 11 and generate a first DC signal". The generated first DC signal is applied to the conductive member of the substrate support 11. In one embodiment, the first DC signal may also be applied to other electrodes, such as electrodes within the electrostatic chuck. In one embodiment, the second DC generation unit 32b is configured to "connect to a conductive member of the spray head 13 and generate a second DC signal". The generated second DC signal is applied to the conductive member of the spray head 13. In various embodiments, the first and second DC signals may also be pulsed. In addition, the first and second DC generating units 32a and 32b can also be added to the RF power supply 31, or the first DC generating unit 32a can replace the second RF generating unit 31b.

[0241] The exhaust system 40 may be connected, for example, to a gas outlet 10e located at the bottom of the plasma processing chamber 10. The exhaust system 40 may also include a pressure regulating valve and a vacuum pump. The pressure within the plasma processing space 10s is adjusted using the pressure regulating valve. The vacuum pump may also include a turbomolecular pump, a dry pump, or a combination of such pumps.

[0242] <End effector 400 of the transport robot arm 470 of this embodiment> The end effector 400 of the transport robot arm 470 of this embodiment will be described. Figure 25 is a top view of the end effector 400 of the transport robot arm 470 of this embodiment. Figure 26 is a bottom view of the end effector 400 of the transport robot arm 470 of this embodiment.

[0243] Additionally, for ease of explanation, an XYZ orthogonal coordinate system is sometimes used in the figures. Regarding the coordinate axes perpendicular to the paper plane of the diagram, a cross in the circle indicates the depth direction relative to the paper plane is positive, and a black dot in the circle indicates the front direction relative to the paper plane is positive. However, this coordinate system is for illustrative purposes only and is not intended to limit the orientation of end effectors, etc.

[0244] In addition, in this invention, unless otherwise specified, the X-axis and Y-axis are axes in a direction parallel to the mounting surface of the end effector. The Y-axis is the axis in the direction in which the front end of the end effector extends. The X-axis is an axis perpendicular to the Y-axis. The Z-axis is an axis in a direction perpendicular to the X-axis and Y-axis. In addition, sometimes the Z-axis direction is used as the up-down direction.

[0245] The transport robot arm 470, for example, refers to at least one of the vacuum transport robot arm TR1, the vacuum transport robot arm TR2, and the atmospheric transport robot arm TR3. The transport robot arm 470 transports the substrate W and consumable parts disposed in the plasma processing apparatus 1 (substrate processing apparatus) according to the operation instructions from the control unit CU.

[0246] A handling robot arm 470 includes an end effector 400, an arm 160, and a control device 450. The control device 450 of the handling robot arm 470 is communicatively connected to a control unit CU. The control unit CU outputs motion instructions to the handling robot arm 470. The handling robot arm 470, based on the motion instructions output by the control unit CU, uses the end effector 400 to handle the object to be handled. Furthermore, the combination of the handling robot arm 470 and the control unit CU is referred to as a handling system 480.

[0247] The end effector 400, for example, refers to at least one of end effectors FK11, FK12, FK21, FK22, and FK31. The arm 160, for example, is any one of the arms AR11, AR12, AR21, AR22, and AR31 corresponding to the end effector 400. The end effector 400 transports an object under at least one of atmospheric pressure and vacuum conditions.

[0248] Control device 450, control arm 160. The control device 450 is connected to optical sensors 422 and 423 (described later). The control device 450 determines the positional relationship between the substrate W and the end effector 400 based on the results measured by the optical sensors 422 and 423 respectively. Then, the control device 450 sends the measured positional relationship between the substrate W and the end effector 400 to the control unit CU. The control unit CU can also determine the positional relationship between the substrate W and the end effector 400 based on the results measured by the optical sensors 422 and 423 respectively.

[0249] The end effector 400 carries a substrate and a consumable part disposed in the plasma processing apparatus 1. The consumable part disposed in the plasma processing apparatus 1 is, for example, an annular member of the annular assembly 112.

[0250] The end effector 400 has a roughly U-shaped form when viewed from above. The end effector 400 has a symmetrical shape when viewed from above, relative to the central axis AX that passes through the center in the X-axis direction and extends in the Y-axis direction.

[0251] The end effector 400 includes a base 101, a front end portion 102, and a front end portion 103. The front end portion 102 and the front end portion 103 are each configured to extend from the base 101 in the +Y axis direction. The front end portion 102 and the front end portion 103 are each shorter in the X-axis direction and longer in the Y-axis direction, and are generally rectangular in shape when viewed from above. The front end portion 102 is configured to be separated from the front end portion 103 in the +X axis direction. The end effector 400 is, for example, formed of ceramic.

[0252] The end effector 400 has a mounting surface 100S1 for mounting a substrate and a consumable part. The end effector 400, on the mounting surface 100S1, includes an optical sensor 422, an optical sensor 423, and a plurality of pads 140 protecting the substrate W from contact with the mounting surface 100S1. The optical sensor 422 is located at the front end of the front end portion 102 on the +Y side in the Y-axis direction. The optical sensor 423 is located at the front end of the front end portion 103 on the +Y side in the Y-axis direction.

[0253] In addition, the end effector 400 has an optical sensor 522 and an optical sensor 523 on the bottom surface 100S2 opposite to the mounting surface 100S1. The optical sensor 522 and the optical sensor 523 are respectively disposed on the back side of the optical sensor 422 and the optical sensor 423.

[0254] Optical sensors 422 and 423 each optically detect the presence of substrate W on their respective upper sides. Optical sensors 422 and 423 are each connected to control device 450.

[0255] Optical sensors 522 and 523 each optically detect the presence of a substrate W on their respective undersides. Additionally, optical sensors 522 and 523 each detect, for example, a substrate mounting surface or an annular member of an annular assembly located on their respective undersides, to detect the state of the substrate or annular member's mounting location. Optical sensors 522 and 523 are each connected to the control device 450.

[0256] For example, optical sensors 422, 423, 522, and 523 are each image sensors. As image sensors, optical sensors 422 and 423 each capture images of their respective upper sides. Furthermore, optical sensors 522 and 523 each capture images of their respective lower sides.

[0257] Then, the control device 450 determines from the captured image whether a substrate W exists on the upper side of each of the optical sensors 422 and 423. Additionally, the control device 450 determines from the captured image whether a substrate W exists on the lower side of each of the optical sensors 522 and 523. Furthermore, the control device 450 determines the state (position, etc.) of, for example, the substrate mounting surface or the annular member of the annular assembly located on the lower side of each of the optical sensors 522 and 523.

[0258] Furthermore, optical sensors 422, 423, 522, and 523 are, for example, each a distance sensor. Optical sensors 422 and 423, as distance sensors, each measure the distance to an object located above them. Similarly, optical sensors 522 and 523, as distance sensors, each measure the distance to an object located below them.

[0259] Then, the control device 450 determines, based on the measured distance, whether a substrate W exists on the upper side of each of the optical sensors 422 and 423. Additionally, based on the measured distance, it determines whether a substrate W exists on the lower side of each of the optical sensors 522 and 523. Furthermore, the control device 450 determines the state (position, etc.) of, for example, the substrate mounting surface or the annular member of the annular assembly located on the lower side of each of the optical sensors 522 and 523.

[0260] Furthermore, optical sensors 422, 423, 522, and 523 are, for example, each a reflective light intensity sensor. As reflective light intensity sensors, optical sensors 422 and 423 each illuminate their respective upper sides and measure the light intensity reflected from an object located above them. Additionally, optical sensors 522 and 523 each illuminate their respective lower sides and measure the light intensity reflected from an object located below them.

[0261] Then, the control device 450 determines, based on the measured light intensity, whether a substrate W exists on the upper side of each of the optical sensors 422 and 423. Additionally, the control device 450 determines, based on the measured light intensity, whether a substrate W exists on the lower side of each of the optical sensors 522 and 523. Furthermore, the control device 450 determines the state (position, etc.) of, for example, the substrate mounting surface or the annular member of the annular assembly located on the lower side of each of the optical sensors 522 and 523.

[0262] In addition, optical sensors 422, 423, 522 and 523 may each be LED sensors, for example.

[0263] The method for measuring position offset will now be explained. Figures 27 to 29 are explanatory diagrams of measuring the position offset of the end effector 400 of the handling robot arm 470 relative to the substrate in this embodiment. Here, the measurement of the position offset of the substrate W placed on the substrate support 11 will be explained. For example, the measurement of the substrate W loaded into the locking module can also be performed in the same manner. The substrate W is located above the end effector 400. In addition, the measurement of the lower side of the end effector 400 can also be performed in the same manner.

[0264] The end effector 400 is moved along the arrow AM on the underside of the substrate W mounted on the substrate support 11. As shown in FIG27, initially, the substrate W is not located above the optical sensors 422 and 423 respectively. Therefore, the optical sensors 422 and 423 do not detect the substrate W.

[0265] If the end effector 400 is moved along the arrow AM, as shown in FIG28, the substrate W is located above the optical sensors 422 and 423 respectively. Therefore, the optical sensors 422 and 423 each detect the substrate W.

[0266] If the end effector 400 is moved along the arrow AM, as shown in FIG29, the substrate W is not located above the optical sensors 422 and 423 respectively. Therefore, the optical sensors 422 and 423 do not detect the substrate W.

[0267] Then, the control device 450 uses information about the presence position of the substrate W detected by the optical sensors 422 and 423 respectively to detect the positional offset of the substrate W relative to the end effector 400. For example, the control device 450 determines the center position of the substrate W. Then, the control device 450 calculates the positional offset of the substrate W using the offset of the center position relative to the reference position. Alternatively, the control unit CU may calculate the positional offset of the substrate W in place of the control device 450.

[0268] The control device 450 can, for example, determine the center position of the substrate W from the information of the endpoints of the substrate W detected by the optical sensors 422 and 423 respectively. A total of four endpoints of the substrate W are determined using the optical sensors 422 and 423 respectively. The center coordinates of the substrate W can also be determined from the coordinates of these four endpoints, for example, using the least squares method. Alternatively, three endpoints can be extracted from the four endpoints, and the center coordinates of the circle passing through these three endpoints can be used as the center coordinates of the substrate W. Furthermore, the method for determining the center coordinates is not limited to the above; conventional methods can also be applied.

[0269] In addition, the above description is for the state of moving along the arrow AM, that is, the state of placing (receiving) the substrate W. However, the position of the substrate W can also be measured when moving in the opposite direction to the arrow AM, that is, when the end effector 400 is retracted after placing the substrate W.

[0270] Furthermore, optical sensors 522 and 523 are not limited to the substrate W, and can also detect the position of consumable parts (e.g., the annular member of the annular assembly 112) disposed within the plasma processing apparatus 1 (substrate processing apparatus). The inner diameter of the annular member (edge ​​ring) of the annular assembly 112 is approximately equal to the outer diameter of the substrate W, so the positional offset of the annular member can be calculated in the same manner as the calculation of the positional offset of the substrate W. Furthermore, the number of optical sensors is not limited to two; for example, more than two may be provided. That is, optical sensors may be disposed at at least two locations.

[0271] <Processing of the Transport System 480 in this Embodiment> The processing of the transport system 480 in this embodiment will be described. Figures 30 to 32 are flowcharts illustrating the processing of the transport system 480 in this embodiment. Figure 33 is an explanatory diagram of the processing of the transport system 480 in this embodiment. In Figure 33, the end effector 400 of the transport robot arm 470 is referred to as end effector FK.

[0272] Here, the method of moving the substrate W from the loading locking module LLM and into the program module PM as shown in FIG30 will be described.

[0273] [Step of removing substrate W from loading locking module LLM] First, substrate W is removed from loading locking module LLM (step S100). The details of step S100, which involves removing substrate W from loading locking module LLM (step S100), will be explained with reference to FIG31.

[0274] As shown in FIG33a, when the substrate W is removed from the loading locking module LLM, the substrate W is in a state where it is pushed upward from the loading locking module LLM by the pin. Then, the control unit CU measures the position of the substrate W. Specifically, the position of the substrate W is measured by the control device 450 of the transport robot arm 470 while the end effector FK is moved in the direction of arrow A1 (step S110). In addition, in order to measure the position of the substrate W, the optical sensor 422 and optical sensor 423 on the mounting surface 100S1 side are used to measure the position in the direction of arrow S1 in FIG33a.

[0275] The measurement in step S110, as shown in Figure 33b, continues until the end effector FK moves to the side opposite to the insertion side of the substrate W. Then, the control device 450 of the transport robot 470 sends the measurement result of the position of the substrate W to the control unit CU.

[0276] The control unit CU calculates the offset between the position of the substrate W and the desired position (step S115). The control unit CU determines whether the calculated offset is above a first threshold (step S120). When the calculated offset is above the first threshold (YES in step S120), the control unit CU determines whether the calculated offset is above a second threshold, which is larger than the first threshold (step S130).

[0277] When the calculated offset is above the second threshold (YES in step S130), the control unit CU considers it to be an unrecoverable malfunction and performs emergency stop processing (step S140). As an emergency stop process, the control unit CU generates an alarm and stops the system, for example.

[0278] On the other hand, when the offset is less than the second threshold in step S130 (NO in step S130), the control unit CU determines that the offset of the substrate W can be corrected and performs offset correction processing (step S150). The control unit CU, for example, corrects the position of the end effector FK to correct the offset.

[0279] Then, when the offset is less than the first threshold in step S120 (NO in step S120) and after the processing in step S150 is completed, the substrate handling process is performed (step S160). In step S160, as shown in FIG33c, the substrate W is placed on the end effector FK, and the end effector FK on which the substrate W is placed is moved in the direction of arrow A2 to remove the substrate W.

[0280] [Step of moving substrate W into program module PM] Next, substrate W is moved into program module PM (step S200). The details of step S200, which involves moving substrate W into program module PM, will be explained with reference to FIG32.

[0281] As shown in Figure 33d, when the substrate W is moved into the program module, the end effector FK is moved in the direction of arrow A3. Then, the substrate W is positioned so that it is lifted upward from the pin of the program module PM.

[0282] Then, while moving the end effector FK in the direction of arrow A4, the control device 450 of the transport robot 470 measures the position of the substrate W and the placement location of the substrate W (step S210). Furthermore, to measure the position of the substrate W and the placement location of the substrate W, the direction of arrow S1 in FIG33e is measured using optical sensors 422 and 423 on the placement surface 100S1 side. Additionally, the direction of arrow S2 in FIG33e is measured using optical sensors 522 and 523 on the bottom surface 100S2 side.

[0283] The position of the substrate W can be determined by measuring the end of the annular member (edge ​​ring) of the annular component 112, or by measuring the substrate support surface 111a or the edge ring support surface 111b.

[0284] After the measurement in step S210, the control device 450 of the transport robot arm 470 sends the measurement result of the position of the substrate W to the control unit CU.

[0285] The control unit CU calculates the offset between the position of the substrate W and the position of the mounting location (step S215). The control unit CU determines whether the calculated offset is above a first threshold (step S220). When the calculated offset is above the first threshold (YES in step S220), the control unit CU determines whether the calculated offset is above a second threshold, which is larger than the first threshold (step S230).

[0286] When the calculated offset is above the second threshold (YES in step S230), the control unit CU considers it to be an unrecoverable malfunction and performs emergency stop processing (step S240). As an emergency stop process, the control unit CU issues an alarm and stops the system, for example.

[0287] On the other hand, when the offset is less than the second threshold in step S230 (NO in step S230), the control unit CU determines that the offset of the substrate W can be corrected and performs offset correction processing (step S250). The control unit CU repositions the substrate W onto the end effector FK, for example, correcting the position of the end effector FK to correct the offset. Then, it is repositioned onto the program module PM. Next, the process is repeated in step S210.

[0288] Then, when the offset is less than the first threshold in step S220 (NO in step S220), the substrate placement process is performed (step S260). By performing step S260, as shown in f of FIG33, the substrate W is placed in the program module PM.

[0289] Furthermore, in the above description, the determination in steps S120 and S220 is based on the same first threshold, but different thresholds may be used in steps S120 and S220. The same applies to the second threshold in steps S130 and S230.

[0290] [Function and Effect] According to the conveying system 480 of this embodiment, the positional deviation of the substrate W can be self-diagnosed and self-corrected within the conveying system 480. Therefore, according to the conveying system 480, the positional accuracy can be improved when conveying the substrate W. By improving the positional accuracy when conveying the substrate W, the conveying accuracy can be improved, thereby improving the performance of the conveying robot arm. In addition, by self-correcting, the operating time of the device can be extended.

[0291] Furthermore, with the transport system 480 according to this embodiment, the mounting position of the substrate W can be corrected in real time. Therefore, the reliability of the transport robot arm can be improved.

[0292] Furthermore, since the positional deviation can be corrected using the conveying system 480 according to this embodiment, high-precision teaching by the conveying robot arm is not required, and the teaching can be automated. Therefore, manpower can be saved. In addition, the adjustment time can be shortened, thereby improving production efficiency. When performing high-precision teaching, the processing chamber is opened to atmospheric pressure and adjustment is performed. However, if high-precision teaching by the conveying robot arm is not required, the time required to open the processing chamber to atmospheric pressure can be shortened.

[0293] Furthermore, the positional deviation can be corrected by the handling system 480 according to this embodiment, thus making it suitable for handling robotic arms with poor repetitive handling characteristics. Therefore, the cost of the handling robotic arm can be reduced.

[0294] Furthermore, the positional offset can be corrected by the transport system 480 according to this embodiment, so the temperature change of the object and the shape change caused by consumption can be tracked.

[0295] For example, even if the center position of the annular member of the annular component 112 is determined using a sensor wafer or the like, if the position of the end effector and the substrate W deviates from the reference position, the substrate W cannot be placed at the center position of the annular member. However, with the transport system 480 of this embodiment, the positional offset of the substrate W can be corrected, and thus the substrate W can be placed at the center position of the annular member of the annular component 112.

[0296] Furthermore, even when a robotic arm is taught using a sensor wafer, environmental changes (e.g., temperature) or differences between the sensor wafer and the actual substrate W being transported may prevent the substrate W from being transported with the same precision as during the teaching process. With the transport system 480 of this embodiment, the positional offset of the substrate W can be corrected, thus enabling the transport of the substrate W with higher positional precision.

[0297] Furthermore, the above description refers to the state of transporting the substrate W using the transport system 480 of this embodiment, but the object being transported is not limited to the substrate W. For example, the transport system 480 of this embodiment can also be used when transporting the annular component 112 or the components constituting the spray head 13.

[0298] In the above embodiment, the embodiment described is "using an optical sensor as a sensor for detecting the relative position of the fork and the object being transported," but the type of sensor is not limited to this. For example, a non-contact sensor such as a magnetic sensor may be used instead of an optical sensor. Alternatively, as in the first embodiment, a camera may be used as a sensor.

[0299] The above embodiments are described with respect to a semiconductor wafer as the substrate, but the present invention is not limited thereto. For example, the substrate may also be various substrates used in LCDs, FPDs, CD substrates, printed circuit boards, etc.

[0300] <Effects and benefits of embodiments 1 to 3> According to embodiments 1 to 3 described above, the following effects can be achieved: (1) reducing the effect of self-heating of the handling robot arm, and (2) reducing the effect of handling path difference.

[0301] (1) In the past, some control errors sometimes occurred due to the self-heating of the handling robot arm. However, in the first to third embodiments, the positional relationship between the handling object and the end effector was measured one by one, so the position could be corrected regardless of whether there was self-heating. In addition, the cooling of the handling robot arm became less important, so the flow rate of the refrigerant (e.g., cooling gas) could be reduced.

[0302] (2) In the past, the posture of the handling robot arm would be different due to different handling paths, and control errors would sometimes occur when the handling paths were different. However, in the first to third embodiments, the positional relationship between the handling object and the end effector was measured one by one, so the position could be corrected regardless of the handling path.

[0303] All the features of the embodiments disclosed in this case shall be considered as illustrative only and not as limiting requirements. The aforementioned embodiments may also be omitted, replaced, or modified into various embodiments without exceeding the scope of the appended claims and the spirit of the invention.

[0304] This invention is described with reference to illustrative embodiments, but this description is not intended to be limiting. Various modifications and combinations of the illustrative embodiments, as well as other embodiments of the invention, will be obvious to those skilled in the art during the description and reference. For example, the embodiments from Figures 4 to 7 and from Figures 17 to 29 can also be combined in other embodiments. Similarly, the embodiments from Figures 8 to 16 can also be combined with the embodiments from Figures 17 to 29. Therefore, the appended scope of the claims is intended to include any of these modifications or embodiments.

[0305] Regarding the above implementation, the following notes are further disclosed.

[0306] (Note 1) A handling system, characterized in that it comprises: a handling robot arm that handles a transport object using an end effector according to an action instruction; and a control unit that outputs the action instruction to the handling robot arm; at least one of the end effector and the transport object having at least one of a sensor and a camera; the control unit calculating the relative position between the end effector and the transport object based on at least one of the detection result of the sensor and the image captured by the camera; the control unit determining a taught position of the end effector relative to the transport object based on the relative position, and outputting the action instruction to the handling robot arm to position the end effector at the taught position.

[0307] (Note 2) As described in Note 1, the action instruction includes an indication that the end effector for transporting the transported object is aligned with the transport location of the transported object.

[0308] (Note 3) The transport system described in Note 2, wherein the transport location includes at least one of the following: a loading port for holding a container for receiving the transported object; an aligner for detecting the position of the transported object under atmospheric pressure; a storage unit for receiving the transported object under atmospheric pressure; a loading locking module for receiving the transported object and being able to switch between atmospheric pressure and vacuum environments; and a program module for receiving the transported object and performing plasma processing.

[0309] (Note 4) The transport system as described in Note 2 or Note 3, wherein the transported object is at least one of a substrate and an annular assembly surrounding the substrate; the substrate and the annular assembly have a position detection sensor for detecting the position of the transport location.

[0310] (Note 5) A transport system as described in any of Notes 1 to 4, wherein the transport robot transports the object to be transported under at least one of atmospheric pressure and vacuum conditions.

[0311] (Note 6) A method for handling a handling system, the handling system comprising: a handling robot arm that handles an object to be handled using an end effector according to an action instruction; and a control unit that outputs the action instruction to the handling robot arm; at least one of the end effector and the object to be handled having at least one of a sensor and a camera; the handling method is characterized by comprising the following steps: the control unit calculates the relative position between the end effector and the object to be handled based on at least one of the detection result of the sensor and the shooting result of the camera; and the control unit determines a taught position of the end effector relative to the object to be handled based on the relative position, and outputs the action instruction to the handling robot arm to position the end effector at the taught position.

[0312] (Note 7) The transport method described in Note 6, wherein the action instruction includes an instruction that aligns the end effector of the transport object with the transport location of the transport object.

[0313] (Note 8) The transport method described in Note 7, wherein the transport location includes at least one of the following: a loading port for holding a container for receiving the transported object; an aligner for detecting the position of the transported object under atmospheric pressure; a storage unit for receiving the transported object under atmospheric pressure; a loading locking module for receiving the transported object and being able to switch between atmospheric pressure and vacuum environments; and a program module for receiving the transported object and performing plasma processing.

[0314] (Note 9) The transport method as described in Note 7 or Note 8, wherein the transported object is at least one of a substrate and an annular assembly surrounding the substrate; the substrate and the annular assembly have a position detection sensor for detecting the position of the transport location.

[0315] (Note 10) The transport method described in any of Notes 6 to 9, wherein the transport robot transports the object to be transported under at least one of atmospheric pressure and vacuum conditions.

[0316] (Note 11) The transport method described in any of Notes 6 to 10 is performed at least at one time: when the transport system is started, when the end effector is replaced, and when parts in the program module that houses the transported object and performs plasma treatment are replaced.

[0317] (Note 12) A transport device for transporting an object, characterized in that it comprises: an end effector for placing the object; an arm for moving the end effector; and a control device for controlling the arm; the end effector having at least one of a sensor and a camera on the side where the object is placed; the sensor and the camera determining the positional relationship between the object and the end effector.

[0318] (Note 13) The transport device as described in Note 12, wherein the transported object is at least one of the substrate and the annular assembly surrounding the substrate.

[0319] (Note 14) The transport device as described in Note 12 or Note 13, wherein at least one of the sensor and the camera measures the center position of the transported object.

[0320] (Note 15) The transport device as described in Note 14, wherein at least one of the sensor and the camera measures the center position of the transported object during transport.

[0321] (Note 16) The conveying device described in Note 15, wherein the end effector has the sensor; the sensor is a capacitive sensor provided at at least two locations on the end effector.

[0322] (Note 17) As described in Note 16, the electrostatic capacitance sensor is provided at least three times on the same circumference of the end effector.

[0323] (Note 18) The transport device described in any of Notes 14 to 17, wherein at least one of the sensor and the camera measures the center position of the transported object when receiving the transported object.

[0324] (Note 19) The transport device described in any of Notes 14 to 18, wherein at least one of the sensor and the camera measures the center position of the transport object when the transport object is placed in the substrate processing apparatus.

[0325] (Note 20) The transport device as described in Note 18 or Note 19, wherein the end effector has the sensor; the sensor is an optical sensor provided at least two locations on the end effector.

[0326] (Note 21) As described in Note 20, the optical sensor is disposed at the front end of the end effector.

[0327] (Note 22) The transport device described in any of Notes 14 to 19, wherein the control device corrects the positional deviation of the transported object when the central position deviates from the desired position.

[0328] (Note 23) The transport device described in any of Notes 12 to 22, wherein a second sensor is provided on the underside of the end effector; the control device measures and corrects the positional offset of the location where the transported object is placed.

[0329] (Note 24) The transport device described in any of Notes 12 to 23, wherein the transport device transports the object to be transported under at least one of atmospheric pressure and vacuum conditions.

[0330] (Note 25) A handling system, characterized in that it comprises: a handling robot arm that handles a transport object using an end effector according to an action instruction; and a control unit that outputs the action instruction to the handling robot arm; the end effector having at least one of a sensor and a camera; the control unit calculating the relative position of the end effector and the transport object based on at least one of the detection result of the sensor and the image captured by the camera; the control unit determining a taught position of the end effector relative to the transport object based on the relative position, and outputting the action instruction to the handling robot arm to position the end effector at the taught position.

[0331] (Note 26) A method for handling a handling system, the handling system comprising: a handling robot arm that handles a handling object using an end effector according to an action instruction; and a control unit that outputs the action instruction to the handling robot arm; the end effector having at least one of a sensor and a camera on the loading side where the handling object is loaded; the handling method comprising the steps of: (a) the control unit determining the position of the handling object based on at least one of the detection result of the sensor and the shooting result of the camera; and (b) the control unit calculating the offset between the determined position of the handling object and the desired position.

[0332] (Note 27) The transport method described in Note 26 further includes the following steps: (c) when the offset is above the first threshold and less than the second threshold, the control unit corrects the offset.

[0333] (Note 28) The transport method described in Note 27 further includes the following steps: (d) When the offset exceeds the second threshold, the control unit issues an alarm and stops the system.

[0334] (Note 29) The transport method described in any of Notes 26 to 28, wherein step (a) is performed when the end effector receives the transported object.

[0335] (Note 30) The transport method described in any of Notes 26 to 28, wherein step (a) is performed when the end effector loads the transported object.

[0336] (Note 31) The transport method described in any of Notes 26 to 30, wherein the end effector has the sensor; the sensor is an optical sensor.

[0337] (Note 32) A handling system, characterized in that it comprises: a handling robot arm that handles a transport object using an end effector according to an action instruction; and a control unit that outputs the action instruction to the handling robot arm; the end effector having at least one of a sensor and a camera on the loading side where the transport object is loaded; the control unit performing the following steps: (a) determining the position of the transport object based on at least one of the detection result of the sensor and the image captured by the camera; and (b) calculating the offset between the determined position of the transport object and the desired position. [Simplified Explanation of the Diagram]

[0009] [Fig. 1] is a diagram showing an example of a processing system of an embodiment. [Fig. 2] is a diagram showing an example of a plasma processing system of an embodiment. [Fig. 3] is a diagram showing an example of a plasma processing apparatus of an embodiment. [Fig. 4] (a) and (b) are explanatory diagrams of the relative positions of the fork of the vacuum transport robot arm and the substrate. [Fig. 5] (a) and (b) are explanatory diagrams of the relative positions of the fork of the atmospheric transport robot arm and the substrate. [Fig. 6] is a diagram showing an example of a capacitive sensor. [Fig. 7] is a diagram showing another example of a capacitive sensor. [Fig. 8] is a diagram showing an example of a position alignment method for an atmospheric transport robot arm. [Fig. 9] is a diagram showing an example of position alignment of the atmospheric transport robot arm, the aligner, and the loading port. [Fig. 10] is a diagram showing an example of position alignment of the atmospheric transport robot arm and the storage unit. [Fig. 11] This diagram shows another example of the alignment between the atmospheric transport robot arm and the storage unit. [Fig. 12] This diagram shows an example of the alignment between the atmospheric transport robot arm and the loading locking module. [Fig. 13] This diagram shows another example of the alignment between the atmospheric transport robot arm and the loading locking module. [Fig. 14] This diagram shows an example of a method for aligning a vacuum transport robot arm. [Fig. 15] This diagram shows an example of the alignment between a vacuum transport robot arm and the loading locking module. [Fig. 16] This diagram shows an example of the alignment between a vacuum transport robot arm and a program module. [Fig. 17] This is a top view of the end effector of the transport device in the first embodiment. [Fig. 18] This is an explanatory diagram showing the relative position of the end effector and the substrate of the transport device in the first embodiment. [Fig. 19] This is an explanatory diagram showing the relative position of the end effector and the annular member of the transport device in the first embodiment. [Fig. 20] A top view of the end effector of the conveying device in the second embodiment. [Fig. 21] An explanatory diagram of measuring the positional offset of the end effector of the conveying device in the second embodiment relative to the substrate. [Fig. 22] An explanatory diagram of measuring the positional offset of the end effector of the conveying device in the second embodiment relative to the substrate. [Fig. 23] An explanatory diagram of measuring the positional offset of the end effector of the conveying device in the second embodiment relative to the substrate. [Fig. 24] A bottom view of the end effector of the conveying device in the third embodiment. [Fig. 25] A top view of the end effector of the conveying robot arm of this embodiment. [Fig. 26] A bottom view of the end effector of the conveying robot arm of this embodiment. [Fig. 27] An explanatory diagram of measuring the positional offset of the end effector of the conveying robot arm of this embodiment relative to the substrate. [Fig. 28] An explanatory diagram of measuring the positional offset of the end effector of the conveying robot arm of this embodiment relative to the substrate.[Figure 29] is an explanatory diagram illustrating the measurement of the positional offset of the end effector of the handling robot arm relative to the substrate in this embodiment. [Figure 30] is a flowchart illustrating the processing of the handling system in this embodiment. [Figure 31] is a flowchart illustrating the processing of the handling system in this embodiment. [Figure 32] is a flowchart illustrating the processing of the handling system in this embodiment. [Figure 33] is an explanatory diagram illustrating the processing of the handling system in this embodiment.

Claims

1. A handling system comprising: a handling robotic arm for handling an object by means of an end effector according to an action instruction; and a control unit for outputting the action instruction to the handling robotic arm; wherein at least one of the end effector and the object being handled has at least one of a sensor and a camera; wherein the control unit calculates the relative position between the end effector and the object being handled based on at least one of the detection result of the sensor and the image captured by the camera; wherein the control unit determines a taught position of the end effector relative to the object being handled based on the relative position, and outputs the action instruction to the handling robotic arm to position the end effector at the taught position.

2. As in request item 1, the transport system, wherein, The action instruction includes an indication that the end effector for transporting the object is aligned with the location where the object is being transported.

3. As in request item 2, the transport system, wherein, The object to be transported is at least one of a substrate and an annular assembly surrounding the substrate; the substrate and the annular assembly have a position detection sensor for detecting the location of the transport site.

4. A transport device for transporting an object, comprising: an end effector for holding the object; an arm for moving the end effector; and a control device for controlling the arm; the end effector having at least one of a sensor and a camera on the side where the object is held; the sensor and the camera determining the positional relationship between the object and the end effector; the sensor and the camera measuring the center position of the object; and the control device correcting the positional deviation of the object when the center position deviates from a desired position.

5. The conveying device as described in claim 4, wherein, The object being transported is at least one of the following: a substrate, an annular assembly surrounding the substrate, and an upper electrode.

6. The conveying device as described in claim 4, wherein, At least one of the sensor and the camera measures the center position of the transported object during transport.

7. The conveying device as described in claim 6, wherein, The end effector has the sensor; the sensor is a capacitive capacitance sensor located at at least two locations on the end effector.

8. The conveying device as described in claim 7, wherein, The electrostatic capacitance sensor is located at at least three points on the same circumference of the end effector.

9. The conveying device as described in claims 4, 6, 7, or 8, wherein, When receiving the transported object, at least one of the sensor and the camera measures the center position of the transported object.

10. The conveying device as described in claims 4, 6, 7, or 8, wherein, At least one of the sensor and the camera measures the center position of the transported object when the transported object is placed in the substrate processing apparatus.

11. The conveying device as described in claim 9, wherein, The end effector has the sensor; the sensor is an optical sensor located at at least two locations on the end effector.

12. The conveying device as claimed in claim 11, wherein, The optical sensor is located at the front end of the end effector.

13. The conveying device as described in any of claims 4 to 8, wherein, A second sensor is located on the lower side of the end effector; the control device measures and corrects the positional deviation of the location where the transported object is placed.

14. A handling method, performed by a handling system; the handling system comprising: a handling robotic arm that handles a transport object using an end effector according to an action instruction; and a control unit that outputs the action instruction to the handling robotic arm; the end effector having at least one of a sensor and a camera on a loading side where the transport object is loaded; the handling method comprising the steps of: (a) the control unit determining the position of the transport object based on at least one of a detection result from the sensor and an image captured by the camera; and (b) the control unit calculating the offset between the determined position of the transport object and a desired position.

15. The method of transport as described in request item 14, wherein, It further includes the following steps: (c) when the offset is above the first threshold and less than the second threshold, the control unit corrects the offset.

16. The method of transport as described in claim 15, wherein, It further includes the following steps: (d) When the offset exceeds the second threshold, the control unit issues an alarm and stops the system.

17. The method of transport as described in any of claims 14 to 16, wherein, Step (a) is performed when the end effector receives the transported object.

18. The method of transport as described in any of claims 14 to 16, wherein, Step (a) is performed when the end effector loads the transported object.

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