Electronic devices

Abstract

An electronic device is provided for measuring blood flow velocity in the retinal vessels of the eye. One embodiment of the invention is an electronic device comprising: a display unit; a transmitting unit; a receiving unit; and a control circuit. The transmitting unit has the function of generating a first ultrasonic wave of a first frequency and transmitting a first electrical signal corresponding to the first frequency to the control circuit. The receiving unit has the function of receiving a second ultrasonic wave of a second frequency reflected from an object, generating a second electrical signal corresponding to the second frequency, and transmitting the second electrical signal to the control circuit. The object is selected from one or more retinal vessels of the user's eye and blood vessels in the retina. The control circuit has the function of calculating the blood flow velocity selected from one or more retinal vessels and blood vessels using the first and second electrical signals, and transmitting a third electrical signal corresponding to the blood flow velocity to the display unit. The display unit has the function of receiving the third electrical signal and displaying the blood flow velocity.

Description

[Technical Field]

[0001] One embodiment of the present invention relates to an electronic device.

[0002] Note that one embodiment of the present invention is not limited to the above-described technical field. The technical field of the invention disclosed in this specification relates to an object, a driving method, or a manufacturing method. Furthermore, one embodiment of the present invention relates to a process, machine, product, or composition of matter. Therefore, more specifically, examples of the technical field of one embodiment of the present invention disclosed in this specification include semiconductor devices, display devices, liquid crystal display devices, light-emitting devices, energy storage devices, imaging devices, memory devices, signal processing devices, processors, electronic devices, systems, their driving methods, their manufacturing methods, or their inspection methods. [Previous Technology]

[0003] Display devices applicable to XR (Cross Reality or Extended Reality) technologies such as VR (Virtual Reality) and AR (Augmented Reality) are required. Specifically, for example, in order to enhance realism and immersion, the display device is required to have high resolution and high color reproduction.

[0004] Furthermore, as an apparatus applicable to this display device, a liquid crystal display device can be cited as an example. Additionally, as an apparatus applicable to this display device, a light-emitting device having a light-emitting device such as an organic EL (Electro Luminescence) or a light-emitting diode (LED) can be cited as an example. Furthermore, Patent Document 1 discloses a display device having a high pixel count and high resolution, including a light-emitting device comprising an organic EL.

[0005] Furthermore, since electronic devices for XR (e.g., head-mounted displays) are designed to be worn on the head, the distance between the user's eyes and the display unit included in the device is inevitably shortened. Additionally, when wearing an electronic device for XR, users tend to spend more time directly looking at the display unit. Consequently, when wearing an electronic device for XR, eye fatigue can easily develop, leading to drowsiness, decreased concentration, and other issues.

[0006] Consequently, methods for measuring eye fatigue have attracted attention. Patent Document 2 discloses a visual fatigue measuring device that determines a user's visual fatigue by comparing eye movements over two or more time intervals.

[0007] [Patent Document 1] International Patent Application Publication No. 2019 / 220278 [Patent Document 2] International Patent Application Publication No. 2012 / 160741 [Summary of the Invention]

[0008] As a method for measuring eye fatigue, one example is using a camera to photograph the eyes. For instance, by setting up a camera around the display of an XR-enabled electronic device to photograph the user's eyes, the user's eyes can be monitored while using the XR-enabled electronic device. Furthermore, by monitoring the user's eyes, the condition of the fundus of the eye can also be measured using the camera.

[0009] Furthermore, for example, it is difficult to photograph the fundus of the user's eye using a camera device when the user suffers from a condition such as cataracts. This is because the lens of the user's eye is cloudy due to cataracts, and the cloudy area of ​​the lens obstructs the photographing of the fundus.

[0010] One objective of one embodiment of the present invention is to provide an electronic device for measuring blood flow velocity in a user's eye. Another objective of one embodiment of the present invention is to provide an electronic device for measuring body temperature around a user's eyes. Another objective of one embodiment of the present invention is to provide an electronic device for measuring a user's pulse. Another objective of one embodiment of the present invention is to provide an electronic device for measuring a user's blood oxygen saturation. Another objective of one embodiment of the present invention is to provide any of the above-mentioned electronic devices having a display device. Another objective of one embodiment of the present invention is to provide a novel electronic device.

[0011] Note that the purpose of one embodiment of the present invention is not limited to the above-described purposes. The purposes listed above do not preclude the existence of other purposes. In addition, other purposes are those not mentioned above but will be described in the following description. Those skilled in the art can derive and appropriately extract purposes not mentioned above from the description in the specification or drawings, etc. Furthermore, one embodiment of the present invention achieves at least one of the above-described and other purposes. Moreover, one embodiment of the present invention does not need to achieve all of the above-described and other purposes.

[0012] (1) One embodiment of the present invention is an electronic device comprising: a display unit; a transmitting unit; a receiving unit; and a control circuit. The transmitting unit has the function of generating a first ultrasonic wave at a first frequency and transmitting a first electrical signal corresponding to the first frequency to the control circuit. The receiving unit has the function of receiving a second ultrasonic wave at a second frequency reflected by the first ultrasonic wave at an object, generating a second electrical signal corresponding to the second frequency, and transmitting the second electrical signal to the control circuit. The object is one or more blood vessels selected from the retinal vessels of the user's eye and blood vessels in the fundus. The control circuit has the function of calculating the blood flow velocity of one or more blood vessels selected from the retinal vessels and blood vessels in the fundus using the first electrical signal and the second electrical signal, and transmitting a third electrical signal corresponding to the blood flow velocity to the display unit. The display unit has the function of receiving the third electrical signal and displaying the blood flow velocity.

[0013] (2) In addition, one embodiment of the present invention may also include a sound output unit as described in (1) above. Furthermore, the control circuit preferably has the function of sending a fourth electrical signal corresponding to the blood flow velocity to the sound output unit, and the sound output unit preferably has the function of receiving the fourth electrical signal and generating a sound corresponding to the fourth electrical signal.

[0014] (3) In addition, one embodiment of the present invention may also include a housing as described in (1) or (2) above. Preferably, the housing includes a display unit, a transmitting unit, a receiving unit, and a control circuit. Furthermore, it is preferable that the housing has a structure worn on the user's head, wherein when the housing is worn on the user's head, the display unit is located in an area overlapping with the user's eyes, and the transmitting unit, the receiving unit, and the user's eyes are arranged in the same direction in a frontal view.

[0015] (4) In addition, one embodiment of the present invention is an electronic device including: a display unit; and a sensor unit. The display unit has a first region and a second region, both of which include light-emitting devices. The second region includes a light-receiving device. The sensor unit includes a diamond layer having an NV center and is located in a region overlapping with the first region. A wall is provided between the first region and the second region to prevent light from the light-emitting devices of each of the first and second regions from entering the other region. The sensor unit has the function of incidenting a second light onto the light-receiving device included in the second region by incidenting a first light from the light-emitting device included in the second region onto the sensor unit. Thus, temperature is measured from the intensity of the second light.

[0016] Note that in this specification, etc., a semiconductor device refers to a device that utilizes the properties of a semiconductor, as well as a circuit that includes semiconductor elements (e.g., transistors, diodes, photodiodes) and a device that includes such a circuit. Furthermore, a semiconductor device refers to all devices capable of functioning by utilizing the properties of a semiconductor. For example, integrated circuits, chips having integrated circuits, and electronic components containing chips in packages are examples of semiconductor devices. Additionally, memory devices, display devices, light-emitting devices, lighting equipment, and electronic devices are sometimes semiconductor devices themselves, or sometimes include semiconductor devices.

[0017] Furthermore, in this specification, when it is stated as "X and Y are connected," it indicates that the following situations are disclosed in this specification: X and Y are electrically connected; X and Y are functionally connected; and X and Y are directly connected. Therefore, the connection relationships are not limited to those shown in the drawings or text; other connection relationships are also described within the scope of the drawings or text. Here, X and Y refer to objects (e.g., devices, components, circuits, wiring, electrodes, terminals, conductive films, and layers).

[0018] As an example of an electrical connection between X and Y, more than one component capable of electrically connecting X and Y (e.g., switch, transistor, capacitor, inductor, resistor, diode, display device, light-emitting device, load, etc.) can be connected between X and Y. Furthermore, the switch has the function of controlling whether it is turned on or off. In other words, whether current flows is controlled by placing the switch in a conducting state (on state) or a non-conducting state (off state).

[0019] As an example of a case where X and Y are functionally connected, for example, more than one circuit capable of functionally connecting X and Y (e.g., logic circuits (e.g., inverters, NAND circuits, NOR circuits), signal conversion circuits (e.g., digital-to-analog converters, analog-to-digital converters, gamma correction circuits), potential level conversion circuits (e.g., power supply circuits such as boost circuits and buck circuits, level transfer circuits that change the potential level of a signal), voltage sources, current sources, switching circuits, amplification circuits (e.g., circuits that can increase signal amplitude or current, operational amplifiers, differential amplifiers, source follower circuits, buffer circuits), signal generation circuits, memory circuits, control circuits, etc.) can be connected between X and Y. Note that, for example, even if other circuits are sandwiched between X and Y, when the signal output from X is transmitted to Y, it can be said that X and Y are functionally connected.

[0020] Furthermore, when it is explicitly stated as “X and Y are electrically connected”, it includes the following cases: X and Y are electrically connected (in other words, X and Y are connected in a way that includes other components or other circuits in between); and X and Y are directly connected (in other words, X and Y are connected in a way that does not include other components or other circuits in between).

[0021] Furthermore, in this specification, a circuit structure is adopted in which wiring (wiring that supplies a constant potential or wiring that transmits a signal) is electrically connected to multiple components. For example, in this specification, the case where X is directly electrically connected to the wiring and Y is directly electrically connected to the wiring is sometimes referred to as "X and Y are directly electrically connected".

[0022] Alternatively, it can be represented, for example, as "X, Y, the source of the transistor (sometimes replaced by one of the first terminal and the second terminal) and the drain of the transistor (sometimes replaced by the other of the first terminal and the second terminal) are electrically connected to each other, and X, the source of the transistor, the drain of the transistor and Y are electrically connected in sequence." Or, it can be represented as "the source of the transistor is electrically connected to X, the drain of the transistor is electrically connected to Y, and X, the source of the transistor, the drain of the transistor and Y are electrically connected in sequence." X is electrically connected to Y through the source and drain of the transistor, and X, the source of the transistor, the drain of the transistor and Y are sequentially connected to each other." By specifying the connection order in the circuit structure using the same representation method as these examples, the source and drain of the transistor can be distinguished and the scope of the technology can be determined. Note that this display method is an example and is not limited to the above display method. Here, X and Y are objects (e.g., devices, components, circuits, wiring, electrodes, terminals, conductive films or layers, etc.).

[0023] Furthermore, even when components that are independent on a circuit diagram are electrically connected to each other, sometimes one component performs the function of multiple components. For example, when a portion of a wiring is used as an electrode, a conductive film performs the function of both the wiring and the electrode. Therefore, the scope of "electrical connection" in this specification also includes such cases where a conductive film performs the function of multiple components.

[0024] In this specification, etc., a "resistor" can be, for example, a circuit element having a resistance value higher than 0Ω or a wiring having a resistance value higher than 0Ω. Therefore, in this specification, etc., a "resistor" includes wiring with a resistance value, a transistor through which current flows between the source and drain, a diode, a coil, etc. Therefore, "resistor" can sometimes be referred to as "resistance", "load" or "area with a resistance value". In contrast, "resistance", "load" or "area with a resistance value" can sometimes be referred to as "resistor". As a resistance value, it is preferably 1mΩ or more and 10Ω or less, more preferably 5mΩ or more and 5Ω or less, and even more preferably 10mΩ or more and 1Ω or less. In addition, it can also be 1Ω or more and 1×10⁹Ω or less, for example.

[0025] In this specification, etc., "capacitive element" can be, for example, a circuit element having an electrostatic capacitance value higher than 0F, a wiring area having an electrostatic capacitance value higher than 0F, a parasitic capacitance, or a transistor's gate capacitance. Furthermore, "capacitive element," "parasitic capacitance," or "gate capacitance" can sometimes be replaced with "capacitor." Conversely, "capacitor" can sometimes be replaced with "capacitive element," "parasitic capacitance," or "gate capacitance." Furthermore, a "pair of electrodes" of a "capacitor" can be replaced with "a pair of conductors," "a pair of conductive regions," or "a pair of regions." The electrostatic capacitance value can be, for example, 0.05fF or more and 10pF or less. Furthermore, for example, it can also be 1pF or more and 10μF or less.

[0026] In this specification, a transistor includes three terminals: a gate, a source, and a drain. The gate is used as a control terminal to control the conduction state of the transistor. The two terminals used as the source or drain are the input and output terminals of the transistor. Depending on the conductivity type of the transistor (n-channel or p-channel) and the potential applied to the three terminals of the transistor, one of the two input and output terminals is used as the source and the other as the drain. Therefore, in this specification, the source and drain can be interchanged. In this specification, when describing the connection relationship of the transistor, the terms "one of the source and drain" (first electrode or first terminal) and "the other of the source and drain" (second electrode or second terminal) are used. Furthermore, depending on the structure of the transistor, sometimes a back gate is included in addition to the above three terminals. In this case, in this specification, sometimes one of the gate and back gate of the transistor is referred to as the first gate, and the other of the gate and back gate of the transistor is referred to as the second gate. Furthermore, in the same transistor, the "gate" and "back gate" can sometimes be interchanged. In addition, when a transistor includes three or more gates, each gate is sometimes referred to as the first gate, the second gate, the third gate, etc. in this specification.

[0027] For example, in this specification, a multi-gate structure transistor with two or more gate electrodes can be used as an example of a transistor. When a multi-gate structure is used, since the channel forming regions are connected in series, it becomes a structure in which multiple transistors are connected in series. Therefore, by using a multi-gate structure, the off-state current can be reduced, and the withstand voltage of the transistor can be improved (reliability is improved). Alternatively, by using a multi-gate structure, when the transistor is operating in the saturation region, even if the voltage between the drain and source changes, the change in the drain-source current is not too large, thereby obtaining a voltage-current characteristic with a flat tilt angle. When a voltage-current characteristic with a flat tilt angle is used, an ideal current source circuit or an active load with a very high resistance value can be realized. As a result, differential circuits or current mirror circuits with good characteristics can be realized.

[0028] Furthermore, a circuit diagram illustrating a single circuit element sometimes includes cases where the circuit element comprises multiple circuit elements. For example, a circuit diagram illustrating a resistor includes cases where two or more resistors are connected in series. Similarly, a circuit diagram illustrating a capacitor includes cases where two or more capacitors are connected in parallel. Furthermore, a circuit diagram illustrating a transistor includes cases where two or more transistors are connected in series and the gates of each transistor are electrically connected to each other. Likewise, a circuit diagram illustrating a switch includes cases where the switch comprises two or more transistors connected in series or in parallel and the gates of each transistor are electrically connected to each other.

[0029] Furthermore, in this specification, nodes may also be referred to as terminals, wiring, electrodes, conductive layers, conductors, or impurity regions, depending on the circuit structure and device structure. Additionally, terminals and wiring may also be referred to as nodes.

[0030] Furthermore, in this specification and the like, the terms "voltage" and "potential" may be interchanged as appropriate. "Voltage" refers to the potential difference between the reference potential and the reference potential. For example, when the reference potential is ground potential (grounding potential), "voltage" may also be referred to as "potential". Ground potential does not necessarily mean 0V. In addition, potential is relative, and the potential supplied to the wiring, the potential applied to the circuit, and the potential output from the circuit also change according to the change of the reference potential.

[0031] Furthermore, in this specification and the like, "high-level potential" and "low-level potential" do not imply specific potentials. For example, if two wirings are both labeled as "wirings used to supply high-level potentials," the high-level potentials supplied by the two wirings may be different. Similarly, if two wirings are both labeled as "wirings used to supply low-level potentials," the low-level potentials supplied by the two wirings may be different.

[0032] "Current" refers to the phenomenon of charge movement (conductivity). For example, the description "conductivity of a positively charged body occurs" can be replaced with the description "conductivity of a negatively charged body occurs in the opposite direction." Therefore, in this specification, unless otherwise specified, "current" refers to the phenomenon of charge movement (conductivity) when a carrier moves. Here, examples of carriers include electrons, holes, anions, cations, complex ions, etc., and the carrier varies depending on the system through which the current flows (e.g., semiconductors, metals, electrolytes, and vacuum). Furthermore, the "direction of current" in wiring, etc., refers to the direction of movement of positively charged carriers and is described as a positive current quantity. In other words, the direction of movement of negatively charged carriers is opposite to the direction of current and is described as a negative current quantity. Therefore, in this specification, unless otherwise specified, regarding the positive or negative (or direction) of the current, the description "current flows from element A to element B" can be replaced with the description "current flows from element B to element A." In addition, the description "current is input to element A" can be replaced with the description "current is output from element A."

[0033] Furthermore, in this specification, ordinal numbers such as "first," "second," and "third" are added to avoid confusion regarding the components. Therefore, these ordinal numbers do not limit the number of components. Furthermore, these ordinal numbers do not limit the order of the components. For example, in this specification, a "first" component in one embodiment may be referred to as a "second" component in other embodiments or within the scope of the claims. Furthermore, for example, in this specification, a component referred to as "first" in one embodiment may be omitted in other embodiments or within the scope of the claims.

[0034] In this specification, for convenience, terms such as "upper" and "lower" are sometimes used to indicate the arrangement of components in order to illustrate the positional relationship of the components with reference to the diagram. In addition, the positional relationship of the components may be appropriately changed depending on the direction in which each component is described. Therefore, the terminology used is not limited to that described in the specification, and may be changed as appropriate. For example, if the description is "an insulator located on the top surface of a conductor", it can be changed to "an insulator located on the bottom surface of a conductor" by rotating the direction of the diagram by 180 degrees.

[0035] Furthermore, terms such as "above" or "below" are not limited to situations where the components are positioned "directly above" or "directly below" and in direct contact. For example, if the expression is "electrode B on insulating layer A," it is not necessary for electrode B to be formed in direct contact on insulating layer A; it may also include situations where other components are included between insulating layer A and electrode B.

[0036] Furthermore, in this specification and other materials, terms such as "row" and "column" are sometimes used to describe components configured in a matrix and their positional relationships. Additionally, the positional relationships of the components may be appropriately changed depending on the direction in which each component is described. Therefore, the terminology used is not limited to that described in the specification and other materials, and may be appropriately changed depending on the situation. For example, by rotating the diagram by 90 degrees, the expression "row direction" may sometimes be changed to "column direction."

[0037] Furthermore, in this specification and other materials, the terms "film" and "layer" may be interchanged depending on the situation. For example, sometimes "conductive layer" may be replaced with "conductive film." Also, sometimes "insulating film" may be replaced with "insulating layer." Additionally, depending on the situation or state, other terms may be used instead of "film" and "layer." For example, sometimes "conductive layer" or "conductive film" may be replaced with "conductor." Furthermore, sometimes "insulating layer" or "insulating film" may be replaced with "insulator."

[0038] Note that in this specification, the terms "electrode," "wiring," and "terminal" do not functionally limit the components. For example, sometimes "electrode" is used as part of "wiring," and vice versa. Furthermore, the terms "electrode" or "wiring" also include cases where multiple "electrodes" or "wiring" are formed as one unit. Additionally, for example, sometimes "terminal" is used as part of "wiring" or "electrode," and vice versa. Furthermore, the term "terminal" also includes cases where one or more of "electrode," "wiring," and "terminal" are formed as one unit. Therefore, for example, an "electrode" can be part of "wiring" or "terminal," and vice versa. Furthermore, the terms "electrode," "wiring," or "terminal" are sometimes replaced with terms such as "area," depending on the situation.

[0039] In this specification, the terms "wiring," "signal line," or "power line" may be interchanged depending on the situation or state. For example, sometimes "wiring" may be changed to "signal line." Furthermore, sometimes "wiring" may be changed to "power line." Conversely, sometimes "signal line" or "power line" may be changed to "wiring." Sometimes "power line" may be changed to "signal line." Conversely, sometimes "signal line" may be changed to "power line." Additionally, depending on the situation or state, sometimes the "potential" applied to the wiring may be changed to "signal." Conversely, sometimes "signal" may be changed to "potential."

[0040] In this specification, impurities in a semiconductor refer to substances other than the main components constituting the semiconductor film. For example, elements with a concentration of less than 0.1 atomic% are considered impurities. When impurities are present, for example, the defect state density in the semiconductor may increase, carrier mobility may decrease, or crystallinity may decrease. When the semiconductor is an oxide semiconductor, impurities that alter the semiconductor properties include, for example, Group 1 elements, Group 2 elements, Group 13 elements, Group 14 elements, Group 15 elements, or transition metals other than the main components, especially, for example, hydrogen (contained in water), lithium, sodium, silicon, boron, phosphorus, carbon, and nitrogen. Specifically, when the semiconductor is a silicon layer, impurities that alter the semiconductor properties include, for example, Group 1 elements, Group 2 elements, Group 13 elements, and Group 15 elements (note that oxygen and hydrogen are sometimes excluded).

[0041] In this specification, a switch refers to a component that controls whether current flows by changing to a conducting state (on state) or a non-conducting state (off state). Alternatively, a switch refers to a component that selects and switches current paths. Therefore, a switch sometimes includes two or more terminals for current flow in addition to control terminals. As an example of a switch, an electrical switch or a mechanical switch can be used. In other words, a switch is not limited to a specific component as long as it can control current.

[0042] Examples of electrical switches include transistors (e.g., bipolar transistors or MOS transistors), diodes (e.g., PN diodes, PIN diodes, Schottky diodes, metal-insulator-metal (MIM) diodes, metal-insulator-semiconductor (MIS) diodes, or diode-connected transistors) or logic circuits combining these components. When a transistor is used as a switch, the "conduction state" of the transistor refers, for example, to a state in which the source and drain electrodes of the transistor are electrically short-circuited or to a state in which current can flow between the source and drain electrodes. Conversely, the "non-conduction state" of a transistor refers to a state in which the source and drain electrodes of the transistor are electrically disconnected. When a transistor is used solely as a switch, there are no particular restrictions on the polarity (conductivity type) of the transistor.

[0043] As an example of a mechanical switch, a switch utilizing MEMS (Micro-Electro-Mechanical Systems) technology can be cited. This switch has mechanically movable electrodes, and operates by controlling the on and off states of conduction by moving these electrodes.

[0044] Furthermore, in this specification, etc., devices manufactured using a metal mask or FMM (Fine Metal Mask) are sometimes referred to as devices with an MM (Metal Mask) structure. Additionally, in this specification, etc., devices manufactured without a metal mask or FMM are sometimes referred to as devices with an MML (Metal Mask Less) structure.

[0045] Furthermore, in this specification, the structure in which light-emitting layers are formed or coated separately in light-emitting devices of each color (here, blue (B), green (G), and red (R)) is sometimes referred to as an SBS (Side By Side) structure. Additionally, in this specification, a light-emitting device capable of emitting white light is sometimes referred to as a white light-emitting device. A white light-emitting device, combined with a color layer (e.g., a color filter), can realize a display device that displays in full color.

[0046] Furthermore, light-emitting devices can be broadly classified into single-structure and series-structure devices. A preferred single-structure device has the following structure: a light-emitting unit is included between a pair of electrodes, and this light-emitting unit includes one or more light-emitting layers. To obtain white light emission, the light-emitting layers are selected such that the light emission of each of the two or more light-emitting layers is in a complementary color relationship. For example, by making the light emission color of the first light-emitting layer complementary to the light emission color of the second light-emitting layer, a structure in which the light-emitting device as a whole emits white light can be obtained. The same applies to light-emitting devices including three or more light-emitting layers.

[0047] The series-connected device preferably has the following structure: two or more light-emitting units are included between a pair of electrodes, and each light-emitting unit includes one or more light-emitting layers. To obtain white light emission, a structure is used to combine the light emitted from the light-emitting layers of the multiple light-emitting units to obtain white light emission. Note that the structure for obtaining white light emission is the same as the structure in the single-structure device. Furthermore, in the series-connected device, it is preferable to provide an intermediate layer such as a charge-generating layer between the multiple light-emitting units.

[0048] Furthermore, when comparing the aforementioned white light-emitting devices (single-structure or series-structure) and SBS structure light-emitting devices, the power consumption of the SBS structure light-emitting device is lower than that of the white light-emitting device. For devices where power consumption is desired to be reduced, the SBS structure light-emitting device is preferable. On the other hand, the manufacturing process of white light-emitting devices is simpler than that of SBS structure light-emitting devices, thereby reducing manufacturing costs or increasing manufacturing yield, which is therefore preferable.

[0049] In this specification, "parallel" means a state in which the angle formed by two straight lines is greater than or equal to -10° and less than 10°. Therefore, it also includes a state in which the angle is greater than or equal to -5° and less than 5°. "Approximately parallel" means a state in which the angle formed by two straight lines is greater than or equal to -30° and less than 30°. Furthermore, "perpendicular" means a state in which the angle formed by two straight lines is greater than or equal to 80° and less than 100°. Therefore, it also includes a state in which the angle is greater than or equal to 85° and less than 95°. "Approximately perpendicular" means a state in which the angle formed by two straight lines is greater than or equal to 60° and less than 120°.

[0050] According to one embodiment of the present invention, an electronic device for measuring blood flow velocity in a user's eye can be provided. Additionally, according to one embodiment of the present invention, an electronic device for measuring body temperature around a user's eyes can be provided. Furthermore, according to one embodiment of the present invention, an electronic device for measuring a user's pulse can be provided. Furthermore, according to one embodiment of the present invention, an electronic device for measuring a user's blood oxygen saturation can be provided. Furthermore, according to one embodiment of the present invention, any of the above-mentioned electronic devices having a display device can be provided. Additionally, according to one embodiment of the present invention, a novel electronic device can be provided.

[0051] Note that the effects of one embodiment of the present invention are not limited to those described above. The effects listed above do not preclude the existence of other effects. Furthermore, other effects are those not mentioned above but will be described in the following description. Those skilled in the art can derive and appropriately extract effects not mentioned above from the description in the specification or drawings, etc. Moreover, one embodiment of the present invention has at least one of the above-described effects and other effects. Therefore, one embodiment of the present invention may sometimes not have the effects exemplified above.

Implementation Method

[0053] In this specification, etc., metal oxide refers to oxides of metals in a broad sense. Metal oxides are classified as oxide insulators, oxide conductors (including transparent oxide conductors), and oxide semiconductors (also abbreviated as OS), etc. For example, when the channel forming region of a transistor contains a metal oxide, the metal oxide is sometimes referred to as an oxide semiconductor. In other words, when a metal oxide can form the channel forming region of a transistor that includes at least one of amplification, rectification, and switching functions, the metal oxide can be referred to as a metal oxide semiconductor. Furthermore, an OS transistor can be referred to as a transistor containing a metal oxide or an oxide semiconductor.

[0054] Furthermore, in this specification and the like, nitrogen-containing metal oxides are sometimes referred to as metal oxides. Additionally, nitrogen-containing metal oxides may also be referred to as metal oxynitrides.

[0055] Furthermore, in this specification and the like, the structures shown in each embodiment can be appropriately combined with the structures shown in other embodiments to constitute an embodiment of the present invention. Additionally, when multiple structural examples are shown in one embodiment, these structural examples can be appropriately combined.

[0056] In addition, the content (or a part thereof) described in a certain embodiment may be applied / combined / replaced with other content (or a part thereof) described in that embodiment and at least one of the content (or a part thereof) described in another or more other embodiments.

[0057] Note that the content described in the embodiments refers to the content described using various diagrams or the content described using the text recorded in the instruction manual.

[0058] In addition, more drawings can be formed by combining a drawing (or a portion thereof) shown in one embodiment with other portions of that drawing, other drawings (or a portion thereof) shown in that embodiment, and at least one drawing (or a portion thereof) shown in another or more other embodiments.

[0059] The embodiments described in this specification are illustrated with reference to the accompanying drawings. Note that those skilled in the art will readily understand that the embodiments can be implemented in many different forms, and their manner and details can be varied in various ways without departing from the spirit and scope of the invention. Therefore, the invention should not be construed as being limited only to the contents described in the embodiments. Note that in the structure of the invention in the embodiments, the same element symbols are sometimes used in different drawings to represent the same parts or parts having the same function, and repeated descriptions are omitted. In perspective views or top views, for clarity, illustrations of some components are sometimes omitted.

[0060] In this specification, etc., when multiple elements use the same symbol and it is necessary to distinguish them, sometimes symbols such as "_1", "[n]", "[m,n]" are added to the symbol for identification. In addition, in drawings, etc., when symbols such as "_1", "[n]", "[m,n]" are added to the symbol for identification, if it is not necessary to distinguish them in this specification, sometimes the symbols for identification are not added.

[0061] Furthermore, in the drawings of this specification, sizes, layer thicknesses, or areas are sometimes exaggerated for clarity. Therefore, the present invention is not limited to the dimensions shown in the drawings. Moreover, the drawings schematically illustrate ideal examples and are not limited to the shapes or values ​​shown in the drawings. For example, non-uniformity of signals, voltages, or currents caused by noise or timing deviations may be included.

[0062] Embodiment 1 In this embodiment, an electronic device according to one embodiment of the present invention will be described.

[0063] Figure 1A shows an electronic device HMD, which is one embodiment of a head-mounted display, worn by a user USR. Furthermore, the electronic device HMD has the function of transmitting ultrasonic waves to the user USR and receiving the ultrasonic waves reflected from the user USR.

[0064] In Figure 1A, the electronic device HMD includes, for example, a housing KYT, a display unit DSP, a transmitter TRM, and a receiver RCV. Additionally, the electronic device HMD includes a temple TM that is part of the housing.

[0065] Additionally, the electronic device HMD in FIG1A, for example, has a sound output section SNO that is used as headphones. The sound output section SNO is electrically connected to the circuitry inside the housing KYT via wiring.

[0066] The outer shell KYT has, for example, a structure that can be worn on the head of the user USR.

[0067] The housing KYT is provided with two display units DSP for the right eye and the left eye, for example. One display unit DSP is arranged such that it is located in the area overlapping with one eye when the housing KYT is worn on the user's USR's head. Similarly, the other display unit DSP is arranged such that it is located in the area overlapping with the other eye when the housing KYT is worn on the user's USR's head.

[0068] The transmitting unit TRM, for example, has the function of generating ultrasonic waves and transmitting them to the user USR.

[0069] The receiving unit RCV, for example, has the function of receiving ultrasonic waves reflected from the user USR.

[0070] Figure 1B shows, for example, the case where ultrasonic waves USW are transmitted from the transmitting unit TRM to the user's eye ME, and Figure 1C shows, for example, the case where ultrasonic waves USWr are obtained reflected in the user's eye ME.

[0071] In Figures 1B and 1C, the eye ME of the user USR includes the cornea KM, lens SST, retina MM, optic nerve SSK, vitreous GT and retinal vessels MKN.

[0072] As shown in Figure 1B, the ultrasound wave USW propagating from the transmitting unit TRM passes through the cornea KM, lens SST, and vitreous GT of the eye ME to reach the retinal vessels MKN and retina MM. Note that the ultrasound wave USW propagating from the transmitting unit TRM can also reach the retinal vessels MKN and retina MM via a path that does not pass through the lens SST.

[0073] In addition, as shown in FIG1C, the ultrasound USWr acquired in the receiving unit RCV is an ultrasound USW that is reflected from the transmitting unit TRM by one or both of the retinal vessels MKN of the eye ME and the vessels included in the fundus.

[0074] As shown in Figures 1B and 1C, the ultrasound waves USW propagated from the transmitting unit TRM and reflected by one or both of the retinal blood vessels MKN and blood vessels included in the fundus are acquired by the receiving unit RCV.

[0075] The frequency difference between ultrasound USW and ultrasound USWr is determined based on the velocity of blood cells flowing through the blood vessels. In other words, by obtaining the frequency of ultrasound USWr from the receiver RCV, the blood flow velocity of the retinal vessels MKN of the user USR and at least one of the blood vessels included in the fundus can be determined.

[0076] As a specific example, consider the blood vessel KN shown in Figure 2 and the blood cells BC flowing through the blood vessel KN. When an ultrasound wave USW with frequency f0 propagates from the transmitting unit TRM, is reflected by the ultrasound wave USW in the blood cell BC within the blood vessel KN, and an ultrasound wave USWr with input frequency f is input to the receiving unit RCV, the blood flow velocity V can be expressed as V = {VB × (f - f0)} / {(2cosϕ) × f0}. Note that VB is the speed of sound in the blood, and ϕ is the angle between the direction of travel of the blood cell and the direction of travel of the ultrasound wave USW (ultrasound wave USWr).

[0077] When eye fatigue is presented in the user's USR, the blood flow velocity of the user's USR is lower than usual. In other words, by measuring the blood flow velocity of the user's USR using the transmitter TRM, receiver RCV, etc. of the electronic device HMD, the eye fatigue level of the user's USR can be confirmed one by one.

[0078] In addition, blood pressure can sometimes be measured by measuring pulse waves (volume changes in blood vessels accompanying heartbeats) from ultrasound USW and ultrasound USWr reflected from at least one of the retinal vessels MKN and blood vessels including the fundus. Similarly, heart rate, blood oxygen saturation, etc. can sometimes also be measured.

[0079] In addition, the electronic device HMD shown in FIG1A is a protective head-mounted display, but the electronic device of one embodiment of the present invention may also be an eyeglasses-type head-mounted display.

[0080] Next, an example of the structure of the display unit DSP, the transmitter unit TRM, and the receiver unit RCV of the electronic device HMD shown in FIG1A will be described.

[0081] FIG3A is a top view of a structural example of the electronic device HMD that can be applied to FIG1A. Arrows indicating the x and y directions are included in FIG3A. In this specification, the top view shown in FIG3A is sometimes referred to as an xy-plane view viewed from the z direction. Additionally, the line of sight towards the z direction is sometimes referred to as a top view. Furthermore, a right-handed coordinate system is used in FIG3A, so the z direction in FIG3A is the direction towards the front of the diagram.

[0082] In this specification, etc., one of the x-direction, y-direction, and z-direction is sometimes referred to as the "first direction". In addition, another one is sometimes referred to as the "second direction". In addition, the remaining one is sometimes referred to as the "third direction".

[0083] FIG3B is a front view showing a structural example of the electronic device HMD shown in FIG3A. In this specification, etc., the front view shown in FIG3B is a zx plan view viewed from the y direction. In addition, the line of sight in the y direction is sometimes referred to as a front view.

[0084] The electronic device HMD shown in Figures 3A and 3B has a structure in which the receiver RCV is positioned between the display unit DSP for the right eye and the display unit DSP for the left eye. Furthermore, the transmitter TRM is arranged in the x-direction in Figure 3B (zx plan view from the y-direction), with the receiver RCV, the user's eye ME, and the transmitter TRM aligned in the x-direction. In particular, the transmitter TRM is arranged in a row with the receiver RCV separated from the display unit DSP. Therefore, in Figures 3A and 3B, the transmitter TRM is positioned at two locations: one adjacent to the display unit DSP for the right eye and the other adjacent to the display unit DSP for the left eye.

[0085] As shown in Figures 3A and 3B, in order to efficiently acquire the ultrasound waves USWr reflected in the retinal vessels MKN of the eye ME and at least one blood vessel included in the fundus by using the receiver RCV to transmit the ultrasound waves USW from the transmitter TRM, it is preferable that, in the zx plane viewed from the y direction, that is, in frontal view, the transmitter TRM, the eye ME and the receiver RCV are arranged in one direction within the electronic device HMD.

[0086] Furthermore, the electronic device of one embodiment of the present invention is not limited to the structures of FIG3A and FIG3B. The structure of the electronic device of one embodiment of the present invention may be appropriately modified as long as it is within the scope of achieving the purpose.

[0087] For example, the electronic device of one embodiment of the present invention may also employ a structure in which the positions of the transmitting unit TRM and the receiving unit RCV are replaced in the electronic device HMD of FIG3A and FIG3B. FIG3C and FIG3D respectively show, for example, the structure of the electronic device HMD in which the positions of the transmitting unit TRM and the receiving unit RCV are replaced in FIG3A and FIG3B.

[0088] Furthermore, for example, the electronic device according to one embodiment of the present invention may also employ a structure in which the receiving unit RCV, the user's eye ME (USR), and the transmitting unit TRM are arranged in the z-direction. Specifically, for example, the electronic device HMD shown in FIG3E and FIG3F has the following structure: on the zx plane viewed from the y-direction, the transmitting unit TRM is disposed above the display unit DSP, and the receiving unit RCV is disposed above the display unit DSP. Therefore, the electronic device HMD of FIG3E and FIG3F differs from the electronic device HMD of FIG3A to 3D in that it has two transmitting units TRM and two receiving units RCV.

[0089] Furthermore, in Figures 3A to 3F, the transmitting unit TRM, display unit DSP, and receiving unit RCV are arranged along the y-direction or z-direction on the zx plane viewed from the y-direction. However, if the ultrasonic wave USW propagating from the transmitting unit TRM is reflected by at least one of the retinal blood vessels MKN of the eye ME and blood vessels including the fundus, and the reflected ultrasonic wave USWr can be obtained by the receiving unit RCV, the positional relationship between the transmitting unit TRM and the receiving unit RCV is not limited to any of the structural examples of the electronic device HMD in Figures 3A to 3F. For example, as shown in Figure 4A, the electronic device HMD may also have a structure in which the position of the transmitting unit TRM in the y-direction is higher than the position of the receiving unit RCV in the y-direction on the xy plane viewed from the z-direction. Alternatively, although not shown, a structure in which the position of the transmitting unit TRM in the y-direction is lower than the position of the receiving unit RCV in the y-direction may also be adopted. Alternatively, as shown in Figure 4B, the electronic device HMD may also have a structure in which the position of the transmitting unit TRM in the z-direction is higher than the position of the receiving unit RCV in the z-direction on the zx plane viewed from the y-direction. Alternatively, although not shown, a structure in which the position of the transmitting unit TRM in the z-direction is lower than the position of the receiving unit RCV in the z-direction may also be adopted.

[0090] Alternatively, the transmitting unit TRM and the receiving unit RCV may be housed in the temple TM instead of inside the housing KYT, which includes the display unit DSP. Specifically, as shown in FIG4C, the transmitting unit TRM and the receiving unit RCV may be housed inside the temple TM, which is part of the housing KYT. In this case, the electronic device HMD can also measure the blood flow velocity of the blood vessels around the eye ME.

[0091] In addition, in Figures 3A to 4C, each electronic device HMD obtains information on one or both of blood flow velocity and pulse wave (blood pressure) from the retinal blood vessels MKN of the user USR’s eye ME and the blood vessels including the fundus. However, in one embodiment of the present invention, ultrasound waves may be irradiated on the blood vessels around the eye ME to obtain information on one or both of blood flow velocity and pulse wave (blood pressure) of the blood vessels without irradiating ultrasound waves inside the user USR’s eye ME.

[0092] Note that in Figures 3A to 4C, the display unit DSP has a quadrilateral shape, but the shape of the display unit DSP included in the electronic device of one embodiment of the present invention may also be, for example, a triangle, a graphic with five or more vertices, a circle, an ellipse, or a shape with curves.

[0093] In addition, in Figures 3A to 4C, the transmitting unit TRM and the receiving unit RCV are used to obtain information on one or both of blood flow velocity and pulse wave (blood pressure) from the blood vessels around the user's eye ME, the retinal blood vessels MKN, and the blood vessels including the fundus. However, the electronic device of one embodiment of the present invention may sometimes obtain information on one or both of blood flow velocity and pulse wave (blood pressure) from blood vessels in parts other than the eye ME.

[0094] For example, consider the electronic device HMD shown in FIG5. The electronic device HMD of FIG5 has a structure that transforms the earphone of the electronic device HMD of FIG1A into a headset, including a mounting part HP and a mounting part HE. The mounting part HP is, for example, the part that is mounted on the ear of the user USR, and the mounting part HP includes a sound output part and an ear pad. In addition, the mounting part HE is, for example, the part that is worn on the head of the user USR. In addition, the mounting part HE may also include wiring. In addition, the mounting part HE may include circuitry in addition to wiring.

[0095] Here, in the electronic device HMD of FIG5, by setting a transmitter TRM and a receiver RCV in at least one of the temple TM, mounting part HP and mounting part HE, information on one or both of blood flow velocity and pulse wave (blood pressure) can sometimes be obtained from the blood vessels in the part of the user's eyes other than the eye ME.

[0096] For example, in the electronic device HMD of FIG5, a transmitter TRM and a receiver RCV can be provided in the temple TM. FIG4C shows the structure of an electronic device HMD that obtains information on one or both of blood flow velocity and pulse wave (blood pressure) from the blood vessels in the eye ME of the user USR by providing a transmitter TRM and a receiver RCV in the temple TM. However, information on one or both of blood flow velocity and pulse wave (blood pressure) of the user USR can be obtained from blood vessels other than the eye ME, such as blood vessels in the area of ​​the user USR that is in contact with or in close proximity to the temple TM.

[0097] Furthermore, for example, in the electronic device HMD shown in FIG5, a transmitter TRM and a receiver RCV can be provided in the mounting part HP. As described above, the mounting part HP is the part worn on the ear of the user USR, so by providing the transmitter TRM and receiver RCV in the mounting part HP, information on one or both of the blood flow velocity and pulse wave (blood pressure) of the blood vessels in or around the ear can be obtained.

[0098] Furthermore, for example, in the electronic device HMD shown in FIG5, a transmitter TRM and a receiver RCV can be provided in the mounting section HE. As described above, the mounting section HE is the part worn on the head of the user USR, so by providing the transmitter TRM and receiver RCV in the mounting section HE, information on one or both of the blood flow velocity and pulse wave (blood pressure) of the blood vessels in the head can be obtained.

[0099] <Structural Example 1> Next, a structural example of the above-mentioned electronic device HMD will be described.

[0100] FIG6 is a block diagram showing a structural example of an electronic device HMD as an embodiment of the present invention. The electronic device HMD includes, for example, a transmitting unit TRM, a receiving unit RCV, peripheral circuitry PH, a display unit DSP, and a sound output unit SNO. In addition, to illustrate this structural example, FIG6 also shows the user USR, the user USR's eyes ME, and the ear ER.

[0101] In the electronic device HMD, the transmitting unit TRM includes an oscillator OSC, a mixer UPCMX, and an ultrasonic transmitting circuit USC. The receiving unit RCV includes an oscillator OSCr, a mixer DNCMX, and a functional circuit FNC. The peripheral circuit PH includes a voltage waveform generation circuit VWC, a drive circuit DRV, an audio processing circuit (sometimes called a sound card) SNBD, and a control circuit CTRL.

[0102] The control circuit CTRL, for example, has the function of controlling each circuit included in the electronic device HMD. Therefore, the control circuit CTRL is electrically connected to the transmitting unit TRM, the receiving unit RCV, the voltage waveform generation circuit VWC, the audio processing circuit SNBD, etc. In addition, the control circuit CTRL, for example, has the function of processing information transmitted from each circuit included in the electronic device HMD and sending the processing result to a designated circuit.

[0103] The ultrasonic transmitting circuit USC, for example, has the function of generating a high-frequency electrical signal and sending the electrical signal to the mixer UPCMX described later. Alternatively, the ultrasonic transmitting circuit USC may also have the function of sending the electrical signal to the control circuit CTRL. Furthermore, the electrical signal sent to the control circuit CTRL can be either an analog voltage or a voltage converted to a digital voltage (digital value). The electrical signal converted to a digital voltage can, for example, be a voltage corresponding to information such as the frequency of the ultrasonic wave generated in the ultrasonic transmitting circuit USC. In this specification, the electrical signal sent from the ultrasonic transmitting circuit USC to the control circuit CTRL is referred to as the first electrical signal.

[0104] The voltage waveform generation circuit VWC, for example, has the function of generating a signal for waveform conversion of the electrical signal generated in the ultrasonic transmitting circuit USC. Furthermore, this conversion is performed in the mixer UPCMX, described later. Additionally, the voltage waveform generation circuit VWC can be, for example, a circuit that generates timing pulses or a local oscillator.

[0105] The mixer UPCMX has the function of mixing the high-frequency electrical signal generated in the ultrasonic transmitting circuit USC and the electrical signal generated in the voltage waveform generating circuit VWC and sending the mixed electrical signal to the oscillator OSC.

[0106] The oscillator OSC has the function of generating an ultrasonic USW based on the voltage waveform of an electrical signal that is mixed in the mixer UPCMX and input. The ultrasonic USW is then transmitted to the eyes of the user USR.

[0107] The oscillator OSCr has the function of receiving ultrasound waves USWr reflected from blood cells in one or both of the retinal vessels of the user's eye ME and the blood vessels included in the fundus, and generating an electrical signal based on the ultrasound waves USWr.

[0108] The mixer DNCMX, like the mixer UPCMX, has the function of mixing the electrical signal generated in the oscillator OSCr and the electrical signal generated in the voltage waveform generation circuit VWC and sending the mixed electrical signal to the functional circuit FNC.

[0109] In addition, depending on the circumstances, the electronic device HMD may also not include one or more of the voltage waveform generation circuit VWC, mixer UPCMX and mixer DNCMX.

[0110] The functional circuit FNC can be, for example, one or more circuits selected from a bandpass filter, an amplifier, and an analog-to-digital converter. Additionally, the functional circuit FNC receives an electrical signal from the mixer DNCMX, processes that electrical signal using the aforementioned circuit, and sends the processed electrical signal to the control circuit CTRL.

[0111] A bandpass filter, for example, has the function of outputting an AC voltage of a specific frequency band to the output terminal of the bandpass filter. Additionally, the bandpass filter has the function of reducing AC voltages outside of that specific frequency band. In other words, by determining the specific frequency band to be output to the output terminal, the bandpass filter can select one or more channels from an electrical signal that includes multiple channels.

[0112] An amplifier, for example, has the function of amplifying the voltage amplitude of an electrical signal.

[0113] An analog-to-digital converter circuit, for example, has the function of converting an electrical signal into a digital signal.

[0114] In addition, in this specification, the electrical signal sent from the oscillator OSCr to the mixer DNCMX, the electrical signal sent from the mixer DNCMX to the functional circuit FNC, and the electrical signal sent from the functional circuit FNC to the control circuit CTRL are collectively referred to as the second electrical signal.

[0115] The second electrical signal output from the functional circuit FNC is sent to the control circuit CTRL. The control circuit CTRL obtains information such as the frequency of the ultrasound USW from the first electrical signal and information such as the frequency of the ultrasound USWr from the second electrical signal, and uses this information to calculate the blood flow velocity or pulse wave (blood pressure) in the blood vessels of the user's eye ME being measured. Then, the control circuit CTRL sends the calculation result as an electrical signal to one or both of the display unit DSP and the sound output unit SNO.

[0116] Specifically, for example, when the processing result (blood flow velocity or pulse wave (blood pressure)) performed in the control circuit CTRL is displayed on the display unit DSP, the control circuit CTRL converts the result into an appropriate electrical signal (referred to as a third electrical signal in this specification, etc.) and sends the third electrical signal to the display unit DSP through the drive circuit DRV. Then, the display unit DSP displays an image PIC1 corresponding to the electrical signal to the user USR's eyes ME. Additionally, for example, when the processing result performed in the control circuit CTRL is output in sound form using the sound output unit SNO, the control circuit CTRL converts the result (blood flow velocity or pulse wave (blood pressure)) into an appropriate electrical signal (referred to as a fourth electrical signal in this specification, etc.) and sends the fourth electrical signal to the sound output unit SNO through the sound processing circuit SNBD described later. Then, the sound output unit SNO outputs a sound VM corresponding to the electrical signal to the user USR's ears ER.

[0117] By configuring the electronic device HMD as described above, the electronic device HMD can measure one or both of the user's (USR) blood flow velocity and pulse wave (blood pressure). In addition, the user (USR) can use the electronic device HMD to know one or both of the user's own blood flow velocity and pulse wave.

[0118] <Structural Example 2> Note that the structure of the electronic device according to one embodiment of the present invention is not limited to the structural example of the electronic device HMD shown in FIG6. The structure of the electronic device according to one embodiment of the present invention can be appropriately modified as long as it is within the scope of achieving the purpose.

[0119] The electronic device HMD shown in Figure 7 has, for example, a structure that adds a sensor IS, a sensor control circuit GPC, and an interface IF to the electronic device HMD of Figure 6. In addition, Figure 7 also shows an external terminal EXPC and a monitor OBS.

[0120] Peripheral circuits PH include, for example, sensor control circuit GPC and interface IF.

[0121] The control circuit CTRL is electrically connected to the sensor control circuit GPC, and the sensor control circuit GPC is electrically connected to the sensor IS. In addition, the control circuit CTRL is electrically connected to the interface IF.

[0122] The sensor IS can be, for example, a camera device (sometimes referred to as an image sensor). In this case, the sensor IS has, for example, the function of capturing images of the user USR's eye ME or its fundus and obtaining the captured images as an image PIC2. In addition, the sensor IS has, for example, the function of sending the image PIC2 to the sensor control circuit GPC. By including the sensor IS with a camera device in the electronic device HMD, ultrasound can be used to monitor the blood flow velocity of the blood vessels around the user USR's eye ME, the retinal blood vessels MKN, and at least one of the blood vessels included in the fundus, as well as the condition of the user USR's eye ME's fundus.

[0123] Additionally, the sensor IS can be, for example, a temperature sensor. In this case, the sensor IS can, for example, measure the body temperature of the user USR. In addition, in the electronic device HMD of FIG7, the sensor IS obtains the body temperature of the user USR from the eye ME, but when the sensor IS is a temperature sensor, the body temperature of the user USR can be obtained from one or both of the ear ER and the skin in addition to the eye ME.

[0124] The sensor control circuit GPC has the function of controlling the sensor IS. For example, the sensor control circuit GPC has the function of driving the sensor IS by receiving a command signal from the control circuit CTRL. In addition, the sensor control circuit GPC may also include a current-to-voltage conversion circuit, an analog-to-digital conversion circuit, etc. For example, when obtaining information from the driven sensor IS and supplying an analog current corresponding to that information to the sensor control circuit GPC, the sensor control circuit GPC can use the current-to-voltage conversion circuit to convert the analog current into an analog voltage and use the analog-to-digital conversion circuit to convert the analog voltage into a digital value.

[0125] The interface IF, for example, has the function of transmitting and receiving information to an external terminal EXPC located outside the electronic device HMD. The interface IF can be, for example, an input / output terminal. In addition, the interface IF can also have a structure that uses high-frequency (RF) circuitry to perform wireless communication between the electronic device HMD and the external terminal EXPC.

[0126] Additionally, Figure 7 illustrates, for example, the use of an external terminal EXPC by the monitor OBS. Specifically, by sending one or more pieces of information selected from the user USR wearing the electronic device HMD—blood pressure, pulse, blood oxygen saturation, and body temperature—to the external terminal EXPC via the interface IF, the monitor OBS can obtain this information about the user USR. Thus, the monitor OBS can know the health status of the user USR. In other words, as shown in Figure 7, by constructing a system including the electronic device HMD and the external terminal EXPC, the monitor OBS can manage and monitor the health status of the user USR.

[0127] An application example of the system shown in Figure 7 is as follows: In educational settings such as schools, when the user USR is a student and the monitor OBS is a teacher, the teacher can manage and monitor the health status of the students in class. Additionally, for example, in a workplace setting, when the user USR is a subordinate and the monitor OBS is a supervisor, the supervisor can monitor and manage the health status of the subordinate at work.

[0128] <Structural Example 3> In the above structural example, the electronic device HMD is described when the sensor IS is an image sensor, temperature sensor, etc. The electronic device HMD can also adopt a structure including a sensor using NV (Nitrogen Vacancy) center.

[0129] As a sensor using an NV center, for example, a sensor including a diamond layer having an NV center can be included. The diamond layer having an NV center can be used, for example, as a composite sensor such as a magnetic sensor, an electric field sensor, and / or a temperature sensor.

[0130] Figure 8 shows a structural example of an electronic device HMD including a sensor using an NV center. The electronic device HMD of Figure 8 has a structure that adds a sensor NVS using an NV center to the electronic device HMD of Figure 7. In addition, the peripheral circuit PH of the electronic device HMD of Figure 8 includes a sensor control circuit NVC that has the function of controlling the sensor NVS. In addition, in Figure 8, the transmitting unit TRM and the receiving unit RCV are represented together as an ultrasonic sensor USS.

[0131] For example, suppose the sensor NVS is described as a sensor including a diamond layer with an NV center. Thus, the sensor NVS is used as a sensor to detect more than one of magnetic, electric field and temperature.

[0132] The sensor NVS, for example, has the function of detecting body temperature information of the user's skin SK. In addition, the sensor NVS may also have the function of detecting information on the magnetic and electric fields emitted by cells in the skin SK. In this specification, the above information is referred to together as information TME.

[0133] Furthermore, the information TME detected by the sensor NVS is sent to the sensor control circuit NVC. The sensor control circuit NVC, for example, has the function of converting the information obtained in the sensor NVS into an appropriate electrical signal and sending it to the control circuit CTRL. Here, as an appropriate electrical signal conversion, examples include analog-to-digital conversion, which converts analog current or analog voltage into digital voltage. Therefore, the sensor control circuit NVC may also include an analog-to-digital conversion circuit.

[0134] <<Structural Examples of Composite Sensors>> Figure 9A shows an embodiment of a semiconductor device used as a composite sensor including a diamond layer with an NV center.

[0135] The semiconductor device 800 shown in FIG9 is, for example, a PIN (p-intrinsic-n) diode, including an n+ layer 810, a p- layer 820, a p+ layer 830, an electrode 840a, and an electrode 840b. Furthermore, the semiconductor device 800 contains at least carbon and nitrogen. Alternatively, the semiconductor device 800 may also use a PN junction diode or a field-effect transistor.

[0136] The n+ layer 810 is a semiconductor such as diamond that is doped with impurities such as arsenic or phosphorus at a concentration of a specified value or higher (e.g., 8 × 10¹⁹ cm⁻³). The thickness of the n+ layer 810 is, for example, 500 nm, and is appropriately set according to the required electrical characteristics of the semiconductor device 800.

[0137] The p-layer 820 is a semiconductor, such as diamond, doped with impurities such as boron at a concentration lower than a specified value (e.g., 2 × 10¹⁴ cm⁻³). The thickness of the p-layer 820 is, for example, 5 μm, appropriately set according to the required electrical characteristics of the semiconductor device 800. In addition, the p-layer 820 includes, for example, a sensor portion 850 formed in a layered manner, including NV centers of diamond by nitrogen ion implantation. For example, the sensor portion 850 is preferably disposed at a depth of 300 nm or more and 400 nm or less from the bonding surface with the n+ layer 810, and more preferably disposed at a depth of about 350 nm.

[0138] Semiconductors such as diamonds can be synthesized by high-temperature and high-pressure (HPHT) method, CVD method or detonation method.

[0139] In the sensor section 850 having an NV center, when irradiated with microwaves, the fluorescence emitted by the NV center varies according to one or more selected from an electric field, temperature, and magnetic field. Therefore, one or more selected from an electric field, temperature, and magnetic field within the semiconductor device 800 where the sensor section 850 is located can be measured according to the frequency of the microwaves whose intensity of the fluorescence emitted by the NV center decreases.

[0140] The p+ layer 830 is a semiconductor such as diamond that is doped with impurities such as boron at a concentration of a specified value or higher (e.g., 1×10¹⁷ cm⁻³). The thickness of the p+ layer 830 is, for example, 500 μm, and is appropriately set according to the required electrical characteristics of the semiconductor device 800.

[0141] Electrodes 840a and 840b apply a voltage supplied from a power source outside the semiconductor device 800 to the semiconductor device 800.

[0142] FIG9B shows an example of a measuring device for measuring physical parameters within the semiconductor device 800 shown in FIG9A. The measuring device 900 shown in FIG9B can be, for example, a laser confocal microscope, including the semiconductor device 800, a laser source 910, a beam splitter 920, an objective lens 930, a slide 940, a power supply 950, a microwave source 960, a detection device 970, and a control device 980. Alternatively, the measuring device 900 may also include a digital camera or a spectrometer.

[0143] The laser source 910 emits a laser of wavelength such as 532 nm that excites the NV center of the sensor section 850 arranged in the semiconductor device 800 shown in FIG9A.

[0144] The beam splitter 920 reflects the laser emitted from the laser source 910 toward the semiconductor device 800. In addition, the beam splitter 920 transmits the light flux of the fluorescent light emitted by the sensor section 850 of the semiconductor device 800 toward the detection device 970.

[0145] The objective lens 930 adjusts the beam width of the laser emitted from the laser source 910 to irradiate the semiconductor device 800. In addition, the objective lens 930 makes the fluorescence emitted by the sensor section 850 in the semiconductor device 800 parallel and emits it toward the detection device 970.

[0146] A glass slide 940, made of quartz glass or the like, is on which a semiconductor device 800, which is to be measured, is disposed. Electrodes are formed on the surface of the glass slide 940 on the side where the semiconductor device 800 is disposed, and wiring for operating the semiconductor device 800 is formed. A microwave cable, including an antenna for irradiating microwaves emitted by a microwave source 960 onto the semiconductor device 800, is provided on the glass slide 940 on the side where the semiconductor device 800 is disposed.

[0147] The power supply 950 supplies tens or hundreds of volts of power to the semiconductor device 800 mounted on the glass slide 940 according to the control command from the control device 980.

[0148] The microwave source 960 is a radio wave transmitting device that emits microwaves in a specified frequency range centered at 2.87 GHz. In addition, the microwave source 960 irradiates the semiconductor device 800 with the emitted microwaves by means of an antenna disposed in the glass slide 940, so that the NV center of the sensor section 850 is in an ESR (Electron Spin Resonance) state.

[0149] The laser source 910 and the microwave source 960 are used as a drive unit to drive the sensor unit 850.

[0150] The detection device 970 includes, for example, an APD (avalanche photodiode) that receives the fluorescence emitted by the sensor unit 850 and detects the intensity of the received fluorescence at each position on the XY plane. The detection device 970 outputs the detected fluorescence intensity at each position on the XY plane to the control device 980. The spatial resolution of the detection device 970 depends on the accuracy of the laser focusing using the objective lens 930 and the accuracy of the sample holder (piezo scanner) that fixes the semiconductor device 800 in the slide 940, and is preferably in the range of 10 nm or more and 300 nm or less. Alternatively, the detection device 970 may also use an imaging device including one or both of a CCD (charge-coupled devices) image sensor and a CMOS (complementary metal-oxide-semiconductor) image sensor to perform imaging for measurement.

[0151] The control device 980 is a computer device including an arithmetic processing unit (e.g., a processor) and a memory device (e.g., a hard disk drive), and controls the operation of each component of the measuring device 900. For example, the control device 980 controls the voltage applied to the semiconductor device 800 by the power supply 950 and the frequency of the microwaves emitted by the microwave source 960. Furthermore, the control device 980 calculates the intensity distribution of the fluorescence emitted by the sensor unit 850, detected by the detection device 970, based on the position on each XY plane. The control device 980 determines the frequency with the lowest intensity based on the calculated intensity distribution at each position on each XY plane. Moreover, the control device 980 can, for example, calculate one or more physical parameters selected from electric field, magnetic field, and temperature based on the frequency data with the lowest intensity at each position on each XY plane.

[0152] In addition, the control device 980 may be, for example, the sensor control circuit NVC in the structural example of the electronic device HMD in FIG8. Furthermore, the control device 980 may be, for example, a circuit that includes a memory device or the like, in addition to the sensor control circuit NVC in the structural example of the electronic device HMD in FIG8.

[0153] <Structural Example 4> The electronic device HMD shown in FIG10 is a modified example of the electronic device HMD in FIG8, having a structure in which the display unit DSP, ultrasonic sensor USS, sensor IS, and sensor NVS are included in the display device DEV. Furthermore, the electronic device HMD in FIG10 has a structure that includes the display unit DSP, ultrasonic sensor USS, sensor IS, and sensor NVS in the display device DEV. The display device DEV may also include one or more of the ultrasonic sensor USS, sensor IS, and sensor NVS. Specifically, for example, the display device DEV may include either the display unit DSP and sensor IS, or it may include either the display unit DSP and sensor NVS.

[0154] Here, a structural example of a display device DEV that may be included in the electronic device HMD of FIG10 will be described. The display device DEV shown in FIG11 is an example of a display device DEV that may be included in the electronic device HMD of FIG10, wherein a substrate including circuitry is mounted above and below the substrate BS. The display device DEV shown in FIG11 includes, for example, a circuit layer SICL, a wiring layer LINL, a display unit DSP, a transmitting unit TRM, and a receiving unit RCV above the substrate BS, and a sensor NVS below the substrate BS.

[0155] As the substrate BS, for example, a single-crystal substrate (e.g., a semiconductor substrate made of silicon or germanium) can be used. In addition to single-crystal substrates, as the substrate BS, for example, SOI (Silicon On Insulator) substrates, glass substrates, quartz substrates, plastic substrates, sapphire glass substrates, metal substrates, stainless steel substrates, substrates including stainless steel foil, tungsten substrates, substrates including tungsten foil, flexible substrates, laminated films, and paper or substrate films including fibrous materials can also be used. Examples of glass substrates include barium borosilicate glass, aluminum borosilicate glass, or soda-lime glass. Examples of flexible substrates, laminated films, or substrate films include materials such as polyethylene terephthalate (PET), polyethylene naphthalate (PEN), polyethersulfone (PES), and polytetrafluoroethylene (PTFE). Additionally, synthetic resins such as acrylic resins can also be used. Other examples include polypropylene, polyester, fluorinated polyethylene, or polyvinyl chloride. Additionally, examples include polyamide, polyimide, aromatic polyamide, epoxy resin, inorganic vapor-deposited thin films, and paper. Furthermore, when the manufacturing process of the display device DEV includes heat treatment, a material with high heat resistance is preferably selected as the substrate BS.

[0156] The circuit layer SICL is disposed on the substrate BS. The circuit layer SICL includes, for example, a drive circuit DRV for driving the display unit DSP, a sensor control circuit GPC for controlling the sensor IS, a sensor control circuit NVC for controlling the sensor NVS, and a control circuit CTRL, etc.

[0157] In this embodiment, it is assumed that the substrate BS is a semiconductor substrate containing silicon as a material. Therefore, the transistor included in the circuit layer SICL can be a transistor containing silicon in the channel formation region (hereinafter referred to as a Si transistor).

[0158] A wiring layer (LINL) is disposed on the circuit layer (SICL), and the display unit (DSP), the transmitting unit (TRM), and the receiving unit (RCV) are disposed on the wiring layer (LINL). When the display unit (DSP), the transmitting unit (TRM), and the receiving unit (RCV) are mounted on the wiring layer (LINL) of the substrate (BS), a bonding process can be used, for example. The bonding process will be described in detail in Embodiment 3.

[0159] The wiring layer LNL is provided with wiring, for example. In addition, the wiring included in the wiring layer LNL is used, for example, as wiring to electrically connect the circuits provided in the circuit layer SICL below to the display unit DSP, the transmitting unit TRM and the receiving unit RCV provided above.

[0160] In the structure of the display device DEV in Figure 11, the transmitting unit TRM, the display unit DSP and the receiving unit RCV are arranged in sequence.

[0161] Furthermore, in the display device DEV of FIG11, the display unit DSP includes pixels 80. Pixels 80 include, for example, light-emitting devices 150R, 150G, 150B, and light-receiving devices 160. In particular, the light-receiving device 160 shown in FIG11 can be used as the aforementioned sensor IS.

[0162] The structure of pixel 80 will be explained in detail in Embodiment 3.

[0163] In addition, the sensor NVS is disposed, for example, below the substrate BS. When the sensor NVS is mounted below the substrate BS, a bonding process can be used, for example.

[0164] Furthermore, when a sensor NVS is provided below the substrate BS, the sensor NVS can also be used as a temperature sensor to detect the temperature of the substrate BS. For example, when driving the display device DEV for a long time, the temperature of the display device DEV may rise due to the heat generated during driving. In this case, by using the sensor NVS as a temperature sensor, the rising temperature can be detected by the sensor NVS. In addition, by adding functions such as suppressing the power supply to the display device DEV when the sensor NVS detects the temperature rise of the display device DEV, or temporarily stopping the circuits included in the display device DEV, it is possible to prevent the electronic device HMD, especially the display device DEV, from malfunctioning due to heat.

[0165] <Structural Example 5> FIG12A shows a structural example of a display device of an electronic device applicable to one embodiment of the present invention.

[0166] The display device DEV of FIG12A includes a substrate BS, a circuit layer SICL disposed on the substrate BS, a wiring layer LINL disposed on the circuit layer SICL, and a display unit DSP disposed on the wiring layer LINL. Regarding the substrate BS, the circuit layer SICL, the wiring layer LINL, and the display unit DSP, please refer to the description of the display device DEV described in FIG11.

[0167] Furthermore, in the display device DEV of FIG12A, the display unit DSP includes a region DSPPX, a region DSPa, and a region DSPb. Also, the display unit DSP, like the display device DEV of FIG11, includes a light-emitting device and a light-receiving device.

[0168] Additionally, a sensor NVSa is disposed in the region overlapping with region DSPa, and a sensor NVSb is disposed in the region overlapping with region DSPb. Furthermore, the region located between sensor NVSa and sensor NVSb and overlapping with region DSPPX is referred to as region OPA. Region OPA is used as the region for emitting light (image PIC1 in FIG12A) from the light-emitting device included in region DSPPX upward.

[0169] As sensors NVSa and NVSb, at least one of the sensors having an NV center as described in structural example 3 and the circuit included in the sensor having an NV center can be used. For example, as sensors NVSa and NVSb, a semiconductor device 800 and a glass slide 940 included in the measuring device 900 can be used.

[0170] When driving sensors NVSa and NVSb, light emitted from light-emitting devices included in regions DSPa and DSPb of the display unit DSP is incident on sensors NVSa and NVSb. In other words, in the display device DEV shown in FIG12A, the light-emitting devices included in regions DSPa and DSPb of the display unit DSP are equivalent to the laser source 910 in the measuring device 900.

[0171] Furthermore, when driving sensors NVSa and NVSb, the fluorescence emitted from sensors NVSa and NVSb (specifically, including the sensor portions 850 of each of sensors NVSa and NVSb) is received by light-receiving devices included in regions DSPa and DSPb of the display unit DSP. In other words, in the display device DEV shown in FIG12A, the light-emitting devices included in regions DSPa and DSPb of the display unit DSP correspond to the detection device 970 in the measuring device 900.

[0172] Furthermore, it is preferable to provide light-shielding walls between regions DSPa and DSPPX, and between regions DSPb and DSPPX, to prevent light from incident from each other, so as to prevent light emitted by the light-emitting device included in region DSPPX from incident on at least one of the sensors NVSa and NVSa, and to prevent light emitted by the light-emitting devices included in regions DSPa and DSPb from incident on region OPA. In the display device DEV of FIG12A, for example, light-shielding walls SKWa and SKWb are provided between regions DSPa and DSPPX, and between regions DSPb and DSPPX, respectively. In FIG12A, walls SKWa and SKWb are both illustrated with thick double-dotted lines.

[0173] In addition, in the display device DEV of FIG12A, the light-emitting device and the light-receiving device are included in the same area (area DSPa or area DSPb), so the beam splitter 920 may not be provided.

[0174] In addition, although the objective lens 930 is not shown in the display device DEV of FIG12A, the display device DEV of FIG12A may also be provided with an objective lens 930. In addition, the objective lens 930 may be provided, for example, between the display unit DSP region DSPa and the sensor NVSa, and between the display unit DSP region DSPb and the sensor NVSb.

[0175] In addition, in order to view the image PIC1 displayed on the display unit DSP, a lens can also be provided in the display device DEV of FIG12A. Furthermore, this lens can be provided, for example, in the area overlapping the display unit DSP region DSPPX and region OPA.

[0176] FIG12B shows an example of a front view (zx plan view from the y direction) of an electronic device HMD of FIG1, FIG5, etc. when the display device DEV of FIG12A is applied. The electronic device HMD shown in FIG12B is provided with a right eye display device DEV and a left eye display device DEV.

[0177] In addition, both the right-eye display device DEV and the left-eye display device DEV include sensors NVSa and NVSb, which are preferably in contact with the user's eyes ME, for example.

[0178] Note that the positions of sensors NVSa and NVSb, included in the right-eye display device DEV and the left-eye display device DEV, are not limited to the positions of the electronic device HMD shown in FIG12B. For example, as shown in FIG12C, the electronic device HMD can also arrange sensors NVSa, the display unit DSP, and sensors NVSb vertically (in the z-direction) above and below the eye ME. Furthermore, the positions of sensors NVSa and NVSb, included in the right-eye display device DEV and the left-eye display device DEV, are not limited to the positions shown in FIG12B and FIG12C, and can be freely set.

[0179] In addition, in Figures 12A to 12C, a display device DEV includes two sensors, NVSa and NVSb, but the number of sensors with NV centers included in a display device DEV can be one or more than three.

[0180] By using the display device DEV shown in FIG12A to construct the electronic device HMD shown in FIG12B and FIG12C, the body temperature around the eyes ME of the user USR wearing the electronic device HMD can be measured.

[0181] In addition, although not shown in the figure, by combining the display device DEV shown in Figures 12A to 12C, the ultrasonic sensor USS (transmitter TRM and receiver RCV) and sensor IS described in the above structural example, it is possible not only to measure the body temperature around the user's eyes ME, but also to measure one or more of the blood flow velocity, pulse, blood pressure and blood oxygen saturation selected from the user's eyes ME.

[0182] Note that this embodiment describes an electronic device that uses a transmitting unit (TRM) and a receiving unit (RCV) to obtain information on one or both of blood flow velocity and pulse wave (blood pressure) using ultrasound. However, the electronic device of one embodiment of the present invention is not limited to this. For example, the electronic device of one embodiment of the present invention may use light-emitting devices such as LEDs and organic ELs, and imaging devices without using ultrasound. Specifically, for example, by using a camera device to capture images of the capillaries reflected by light irradiated from the light-emitting device, information on one or both of pulse wave (blood pressure) and blood oxygen saturation can be obtained from the captured image.

[0183] The various structural examples described in this embodiment can be appropriately combined.

[0184] This embodiment can be appropriately combined with other embodiments shown in this specification.

[0185] Embodiment 2 In this embodiment, an example of the use of an electronic device according to an embodiment of the present invention will be described with reference to FIGS. 13 to 23.

[0186] <Example 1> Figure 13 illustrates a scenario where an online class is conducted using electronic device 1010 (electronic device 1010a and electronic device 1010b) and either or both of electronic devices 1020 and 1021. Figure 13 shows a scenario where teacher 1025, student 1015a, and student 1015b participate in the online class, but more than three students can also participate. In this case, each student uses electronic device 1010, so more than three electronic devices 1010 are used in the online class.

[0187] Figure 13 shows a teacher 1025 using electronic devices 1020, 1021, and a camera 1022 to give a lecture in a classroom or similar setting. Here, electronic device 1020 corresponds to the electronic device HMD shown in Figure 1A, etc. Figure 13 also shows a teacher 1025 using both electronic devices 1020 and 1021, but the electronic device used by the teacher 1025 could be either electronic device 1020 or electronic device 1021.

[0188] The lecture is captured using camera 1022, generating image data. This image data includes the teacher 1025 and his / her surroundings. The surroundings of the teacher 1025 may include, for example, a blackboard, whiteboard, or electronic blackboard. This image data is transmitted via network 1030 to one or more electronic devices used by student 1015a (e.g., electronic device 1010a and an electronic device with display device 1011 described later) and one or more electronic devices used by student 1015b (e.g., electronic device 1010b).

[0189] Alternatively, the lecture can be filmed using the camera 1022 in Figure 13, or it can be filmed using the camera on the electronic device 1021. In this case, the teacher 1025 only needs to use the electronic device 1021.

[0190] Figure 13 illustrates a student 1015a using electronic device 1010a and an electronic device with display device 1011 (not shown in Figure 13) to attend classes at home. Here, electronic device 1010a corresponds to the electronic device HMD shown in Figure 1A, etc. The electronic device with display device 1011 receives the aforementioned image data via network 1030, and the image data is displayed on display device 1011. Student 1015a can attend classes by using electronic device 1010a to view the aforementioned image data displayed on display device 1011.

[0191] Electronic device 1010a can measure one or more of the following parameters selected from student 1015a: blood pressure, pulse, oxygen saturation, and body temperature. Information on one or more of the following parameters selected from student 1015a is transmitted via network 1030 to one or more electronic devices (e.g., electronic devices 1020 and 1021) used by teacher 1025.

[0192] Figure 13 shows a student 1015b using electronic device 1010b to attend classes at home. Here, electronic device 1010b corresponds to the electronic device HMD shown in Figure 1A, and the display unit of electronic device 1010b corresponds to the display unit DSP shown in Figure 1A. Electronic device 1010b receives the aforementioned image data via network 1030. Student 1015b can attend classes by viewing the aforementioned image data displayed on the display unit of electronic device 1010b.

[0193] Electronic device 1010b can measure one or more of the following parameters selected from student 1015b: blood pressure, pulse, oxygen saturation, and body temperature. Information selected from student 1015b is transmitted via network 1030 to one or more electronic devices (e.g., electronic devices 1020 and 1021) used by teacher 1025.

[0194] Electronic device 1020 receives information transmitted from each of electronic devices 1010a and 1010b and displays the information on a display unit of electronic device 1020. Alternatively, electronic device 1021 receives information transmitted from each of electronic devices 1010a and 1010b and displays the information on a display unit of electronic device 1021. Teacher 1025 can check the status of students 1015a and 1015b by viewing the information displayed on the display unit of electronic device 1020 or the display unit of electronic device 1021.

[0195] As described above, online classes can be conducted by sending and receiving data through electronic devices 1010 and 1020. At this time, students 1015a and 1015b can monitor their own health status during class. Furthermore, teacher 1025 can confirm the status of students 1015a and 1015b while delivering the lesson.

[0196] Next, Figures 14A to 14C and Figure 15 show examples of displays in the display section of electronic devices used by students.

[0197] Figure 14A shows the actual space as seen by student 1015a. Student 1015a sees display device 1011, a notebook, and a pencil. Additionally, student 1015a sees image data 1026 displayed on display device 1011. Image data 1026 is generated by camera 1022. Teacher 1025 and his surroundings are captured in image data 1026.

[0198] Figure 14B shows image data displayed on the display unit 1012 of the electronic device 1010a used by student 1015a. The display unit 1012 displays information selected from one or more of the student 1015a's blood pressure, pulse, oxygen saturation, and body temperature measured by the electronic device 1010a. For example, as shown in Figure 14B, the display unit 1012 displays an image 1016a1 including the student 1015a's systolic blood pressure, diastolic blood pressure, and pulse rate.

[0199] In addition, the display unit 1012 can also display information other than the student 1015a's blood pressure, pulse, oxygen saturation and body temperature. For example, when the student 1015a's eye fatigue is high, the electronic device 1010 can make a judgment and display an image 1016a2 on the display unit 1012, including text suitable for the student 1015a ("10 minutes left to cheer up" in Figure 14B).

[0200] Figure 14C shows the real space seen by student 1015a using the display unit 1012 of electronic device 1010a. In addition to the display device 1011, notebook, and pencil, student 1015a also sees images 1016a1 and 1016a2. By adopting this structure, student 1015a can not only view the course content played in the online classroom but also understand their own health status. Furthermore, student 1015a can regain concentration in the online classroom by recognizing the text columns in image 1016a2.

[0201] In addition, the electronic device 1010a may also have the function of predicting the direction of the user's (e.g., student 1015a's) gaze. As shown in FIG14C, when the electronic device 1010a has this function, the electronic device 1010a can arrange images 1016a1 and 1016a2 in a space where the student 1015a's gaze is not focused. Therefore, the decrease in the student 1015a's concentration on the online class can be suppressed.

[0202] In addition, when the electronic device 1010a has the above-mentioned functions, it can detect the period during which the student's gaze is diverted from the image data 1026. For example, if the period is long, the electronic device 1010a can restore the student's concentration on the online class by outputting a text string or warning sound suitable for the student 1015a.

[0203] When recognizing the gaze of a user (e.g., student 1015a), an electronic device 1010a equipped with multiple electrodes capable of detecting current flowing along with the user's eye movements can also be used. Alternatively, the direction of the user's (e.g., student 1015a's) gaze can be inferred using one or both of blinking and eyelid movement, using iris movement, or scleral reflex. Alternatively, when inferring the direction of the user's (e.g., student 1015a's) gaze, a learned model or a computational circuit capable of performing computational processing based on an artificial neural network (ANN) can also be used. Note that in this specification, artificial neural networks are referred to as neural networks. As a learned model, a neural network is preferred, and a convolutional neural network is more preferred. Furthermore, as the aforementioned computational circuit, a computational circuit capable of performing product summation operations is preferred.

[0204] Figure 15 shows image data displayed on the display unit 1012 of the electronic device 1010b used by student 1015b. Student 1015b sees image data 1026 generated by camera 1022. The teacher 1025 and his surroundings are captured in image data 1026. In addition, image data 1026 overlaps with images 1016b1 and 1016b2.

[0205] Image 1016b1 includes, for example, the systolic blood pressure, diastolic blood pressure, and pulse rate of student 1015b. Additionally, for example, image 1016b2 includes text suitable for student 1015b (“10 more minutes to go” in Figure 15).

[0206] By adopting this structure, in addition to the course content played in the online classroom, student 1015b can also know the student's own health status. In addition, student 1015b can regain concentration in the online classroom by recognizing the text column in image 1016b2.

[0207] In addition, the electronic device 1010b can also have the function of predicting the direction of the student 1015b's gaze. As shown in FIG15, when the electronic device 1010b has this function, the electronic device 1010b can arrange images 1016b1 and 1016b2 (“Focus” in FIG15) on the display unit 1012 when the student 1015b is not focused on the lesson. When the student 1015b is not focused on the lesson, there is a tendency for the student 1015b's gaze to be focused on a certain area of ​​the display unit 1012 for a long time. The electronic device 1010b can determine whether the student 1015b is focused on the lesson by predicting the direction of the student 1015b's gaze. As shown in FIG15, when the student 1015b is not focused on the lesson, the arrangement of image 1016b2 can suppress the decrease in the student 1015b's concentration on the online class. In particular, the image 1016b2 is preferably displayed on the area where the student 1015b's gaze is focused in the display unit 1012.

[0208] Next, Figures 16A, 16B and 17A to 17C show examples of displays in the display section of the electronic device used by the teacher.

[0209] Next, Figures 16A and 16B show an example of the display unit included in the electronic device 1021 when the electronic device 1021 receives information sent from each of the electronic devices 1010a and 1010b.

[0210] Figure 16A shows an example of the display unit 1023 included in the electronic device 1021 after the online class has started. In addition, Figure 16B shows an example of the display unit 1023 included in the electronic device 1021 after a certain period of time has passed since the online class started.

[0211] In Figures 16A and 16B, the display unit 1023 has regions 1013a and 1013b, and image data is displayed on each of regions 1013a and 1013b.

[0212] The image displayed on region 1013a includes information selected from one or more of the student 1015a's blood pressure, pulse, oxygen saturation, and body temperature, as measured by electronic device 1010a. For example, as shown in Figures 16A and 16B, an image 1016a1 including the student 1015a's systolic blood pressure, diastolic blood pressure, and pulse rate is displayed on region 1013a. Alternatively, an image captured by a camera included in the electronic device, including display device 1011, can also be displayed on region 1013a. In other words, an image including the student 1015a and their surroundings can also be displayed on region 1013a.

[0213] The image displayed on region 1013b includes one or more pieces of information selected from student 1015b by electronic device 1010b, such as blood pressure, pulse, oxygen saturation, and body temperature. For example, as shown in Figures 16A and 16B, an image 1016b1 including student 1015b's systolic blood pressure, diastolic blood pressure, and pulse rate is displayed on region 1013b. Alternatively, it is preferable to display an image that can identify the information on region 1013b as student 1015b ("1015b" in Figures 16A and 16B).

[0214] At the beginning of the online class, the status of students 1015a and 1015b did not change. Therefore, as shown in Figure 16A, regions 1013a and 1013b respectively display image 1016a1 and image 1016b1.

[0215] Sometimes, after a certain period of time during online classes, some users experience increased eye fatigue. For example, as shown in Figure 16B, when student 1015a experiences high eye fatigue, image 1016a3 is displayed in area 1013a. Image 1016a3 includes a text column. For example, the text column could read "May be sleepy" or "Eyes may be tired".

[0216] Additionally, sometimes after a certain period of time has passed since the start of an online class, some users' gazes shift. For example, as shown in Figure 16B, when student 1015b's gaze shifts, image 1016b3 is displayed in a manner that overlaps with area 1013b. Image 1016b3 includes a text column. For example, this text column could be "Tendency to shift gaze".

[0217] As described above, by using one embodiment of the present invention, teacher 1025 can grasp the status of students 1015a and 1015b through text information. For example, teacher 1025 can easily identify students with high eye fatigue or those whose gaze is shifting during online classes, and can communicate closely with these students. In particular, when multiple people participate in online classes, each image displayed on display unit 1023 becomes smaller, making it difficult to grasp the status of the users displayed on display unit 1023. Therefore, one embodiment of the present invention can be adapted for online classes with multiple participants. In addition, teacher 1025 can grasp the health status of students even if they cannot recognize the facial expressions of students who only use electronic devices 1010 to attend classes.

[0218] Next, Figures 17A to 17C show examples of the display unit included in the electronic device 1020 when the electronic device 1020 receives information sent from each of the electronic devices 1010a and 1010b.

[0219] Figure 17A shows the actual space as seen by the teacher 1025. The teacher 1025 sees a blackboard (or a whiteboard or electronic blackboard instead of a blackboard) and electronic device 1021, etc.

[0220] Figure 17B shows image data displayed on the display unit 1027 of the electronic device 1020 used by the teacher 1025. The display unit 1027 displays information from one or more of the following measured by the electronic device 1010a: blood pressure, pulse, oxygen saturation, and body temperature of student 1015a, and information from one or more of the following measured by the electronic device 1010b: blood pressure, pulse, oxygen saturation, and body temperature of student 1015b. For example, in Figure 17B, image 1016c is displayed, including systolic blood pressure, diastolic blood pressure, and pulse rate of students 1015a and 1015b.

[0221] In addition, the display unit 1027 can also display information other than the blood pressure, pulse, oxygen saturation, and body temperature of each student 1015a and student 1015b. For example, the image 1016c can also display information indicating that the student has higher eye fatigue. In addition, it can also display information indicating that the student's gaze has shifted.

[0222] Figure 17C shows the actual space as seen by the teacher 1025 using the display unit 1027 of the electronic device 1020. In addition to the blackboard (which could also be replaced by a whiteboard or electronic blackboard) and the electronic device 1021, the teacher 1025 also sees the image 1016c. By employing this structure, the teacher 1025 can identify the individual health status of students 1015a and 1015b. This allows for close communication with the students.

[0223] The electronic device 1020 used by teacher 1025 can measure one or more of the following parameters: blood pressure, pulse, oxygen saturation, and body temperature. Information from one or more of these parameters is transmitted via network 1030 to the electronic device of a user who is not directly participating in the online class. This user could be a supervisor or colleague of teacher 1025. The electronic device used by this user receives one or more of the parameters from teacher 1025 and displays this information on its display section. Thus, teacher 1025's supervisor can be aware of teacher 1025's stress level and can provide guidance accordingly. Furthermore, teacher 1025's colleagues can suggest teaching methods based on teacher 1025's stress level.

[0224] As described above, by using the electronic device according to one embodiment of the present invention, teachers and students can communicate closely. Furthermore, teachers can communicate closely. Therefore, the electronic device according to one embodiment of the present invention is suitable for use in the field of Educational Technology (also known as EdTech, EduTech, etc.). EdTech is sometimes a neologism combining Education and Technology.

[0225] In addition, the example of online classes between teachers and students is shown above, but remote meetings can also be conducted using electronic device 1010 (electronic device 1010a and electronic device 1010b) and any or both of electronic device 1020 and electronic device 1021.

[0226] Next, the methods for estimating the user's eye fatigue level and the methods for estimating the user's eye gaze direction will be explained.

[0227] As described above, methods for estimating the user's eye fatigue and the direction of the user's gaze can include, for example, methods using one or both of blinking and eyelid movement, methods using iris movement, or scleral reflex methods.

[0228] First, a method for detecting one or both of a user’s blinking and eyelid movement is described using Figure 18.

[0229] Near-infrared light is emitted from an electronic device. This near-infrared light shines into or around the user's eyes. The reflected near-infrared light is then incident on the electronic device. Thus, the state of an object can be detected.

[0230] Additionally, Figure 18 is a schematic diagram illustrating the user's eyes and the area surrounding the user's eyes. Figure 18 shows the user's eyebrows 1960, the user's eyelids (upper eyelid 1966 and lower eyelid 1967), the user's eyelashes 1961, the user's pupil 1962, the user's cornea 1963, and the user's sclera 1965. The electronic device has the function of detecting any one or more of the user's eyebrows 1960, the user's eyelids (upper eyelid 1966 and lower eyelid 1967), the user's eyelashes 1961, the user's pupil 1962, the user's cornea 1963, and the user's sclera 1965 shown in Figure 18.

[0231] For example, an electronic device according to one embodiment of the present invention can detect the state of the user's eyes or the area around the user's eyes as shown in FIG. 18. For example, when the user closes their eyelids (upper eyelid 1966 and lower eyelid 1967), near-infrared light shines on the surface of the eyelids, i.e., the skin. Conversely, when the eyelids are open, near-infrared light shines on the surface of the eyeball. The reflectivity of the skin and the surface of the eyeball are different, so the intensity of the reflected near-infrared light is different. By continuously monitoring the intensity of the reflected near-infrared light, the electronic device can detect one or both of the number of blinks and the time required for one blink.

[0232] When viewing a monitor for a long time, the number of blinks may decrease. In addition, when the user is tired, the interval between blinks may become longer or the time required for a single blink may become longer.

[0233] In an electronic device according to one embodiment of the present invention, the user's fatigue level can be inferred from one or both of the user's blink count and the time required for one blink. For example, it is preferable to set the threshold value in such a way that the user's fatigue level is high when the user's blink count is below a threshold value within a certain period. Alternatively, it is preferable to set the threshold value in such a way that the user's fatigue level is high when the user's blink time is above a threshold value within a certain period.

[0234] Next, the method utilizing iris movement will be explained. When a circular spot of infrared light is irradiated onto the boundary region between the cornea (e.g., cornea 1963 shown in Figure 18) and the sclera (e.g., sclera 1965 shown in Figure 18), the ratio of the area covering the cornea to the area covering the sclera changes with eye movement. The reflectivity from the area covering the sclera is much higher in the cornea-covering and sclera-covering areas, thus the amount of reflected light changes with eye movement. By measuring this change, the direction in which the user is looking can be detected.

[0235] Next, the scleral reflection method will be explained. Near-infrared light is emitted from an electronic device. This near-infrared light passes through an optical system and shines into the user's eye. The reflected light passes through the optical system again and enters the electronic device. Thus, the user's state can be detected. When viewing a displayed image, the user's gaze shifts during fast-moving images. The eye moves during the gaze shift. During eye movement, the ratio of the area covering the cornea to the area covering the sclera changes, so the composition of the reflected light can be monitored to detect eye movement. In other words, an electronic device according to one embodiment of the present invention has an eye-tracking function. By using the eye-tracking function to detect the user's gaze, the area the user is looking at can be inferred.

[0236] In the above case, the electronic device is preferably a light-emitting device that emits infrared light (including near-infrared light).

[0237] Furthermore, a learned model can be used as a method to infer the user's eye fatigue level or the direction of the user's gaze. A neural network is preferably used as the learned model. Deep learning is particularly preferred as the neural network. Examples of deep learning methods include Convolutional Neural Networks (CNNs), Recurrent Neural Networks (RNNs), Autoencoders (AEs), Variational Autoencoders (VAEs), Random Forests, Support Vector Machines, Gradient Boosting, and Generative Adversarial Networks (GANs).

[0238] Furthermore, as a method for estimating the user's eye fatigue level or the user's gaze direction, an arithmetic circuit capable of performing neural network-based computational processing can be used. This arithmetic circuit capable of performing neural network-based computational processing can be referred to as an arithmetic circuit with the function of performing product summation operations. By using this arithmetic circuit, image analysis can be performed with low power consumption. In other words, the power consumption of the electronic device according to one embodiment of the present invention can be reduced.

[0239] Here, the arithmetic circuit will be described. This arithmetic circuit can be, for example, an arithmetic circuit that performs product summation. Furthermore, this arithmetic circuit can be used for neural network processing. Additionally, the arithmetic circuit that performs product summation can be referred to as a neural network arithmetic circuit. For example, a hierarchical neural network can be applied as the neural network. Hierarchical neural networks will be explained later in this embodiment.

[0240] <Example 2> Figure 19 shows an example of using the electronic device of one embodiment of the present invention in a medical setting. In particular, Figure 19 shows a case of diagnosis and treatment using the electronic device 700 and endoscope device 710 of one embodiment of the present invention.

[0241] The doctor 712 operates the endoscope device 710 to observe the patient 715's internal body and take appropriate measures. The doctor 712 wears the electronic device 700. The display of the electronic device 700 displays the images captured by the endoscope device 710 in real time, and the doctor 712 can perform treatment while viewing the images.

[0242] Furthermore, the images captured by the endoscope 710 can also be displayed on a separately installed monitoring device 711. Thus, other doctors 713 and 714 do not obstruct doctor 712 from observing doctor 712 performing treatment in real time. Here, an example of installing the monitoring device 711 in the operating room is shown, but the images can also be viewed in other rooms. For example, medical interns can realistically experience the atmosphere of the treatment scene by using the monitoring device installed in the operating room to observe doctor 712 performing treatment.

[0243] In addition to the display unit of the electronic device 700, the display device of one embodiment of the present invention can also be applied to the display unit of the monitoring device 711. Therefore, doctors 713 and 714 can make high-precision medical judgments using images with extremely high resolution, and can share these judgments with doctor 712 who is performing treatment.

[0244] Thus, by using the electronic device according to one embodiment of the present invention, the quality of medical procedures performed by doctors can be improved. Therefore, the electronic device according to one embodiment of the present invention is suitable for use in the field of medical technology (also known as MedTech, MediTech, etc.). Note that MedTech is sometimes a neologism combining Medical and Technology.

[0245] <<Hierarchical Neural Networks>> A hierarchical neural network, for example, consists of an input layer, one or more intermediate (hidden) layers, and an output layer, comprising a total of three or more layers. The hierarchical neural network ANN shown in Figure 20A is an example of such a network, which includes layers 1 through R (where R can be an integer greater than or equal to 4). Specifically, the first layer corresponds to the input layer, the Rth layer to the output layer, and the other layers to the intermediate layers. Note that in Figure 20A, the (k-1)th layer and the kth layer (where k is an integer greater than or equal to 3 and less than R-1) are shown as intermediate layers, while the other intermediate layers are omitted.

[0246] Each layer of a neural network (ANN) includes one or more neurons. In Figure 20A, the first layer includes neurons N1(1) to Np(1) (where p is an integer greater than or equal to 1), the (k-1)th layer includes neurons N1(k-1) to Nm(k-1) (where m is an integer greater than or equal to 1), the kth layer includes neurons N1(k) to Nn(k) (where n is an integer greater than or equal to 1), and the Rth layer includes neurons N1(R) to Nq(R) (where q is an integer greater than or equal to 1).

[0247] In addition, in addition to neurons N1(1), Np(1), N1(k-1), Nm(k-1), N1(k), Nn(k), N1(R), and Nq(R), Figure 20A also shows neurons Ni(k-1) of the (k-1)th layer (where i is an integer greater than 1 and less than m) and neurons Nj(k) of the kth layer (where j is an integer greater than 1 and less than n), while other neurons are omitted.

[0248] Next, the transmission of signals from neurons in the previous layer to neurons in the next layer, as well as the input or output of signals to each neuron, will be explained. Note that in this explanation, we focus on the neurons Nj(k) in the k-th layer.

[0249] Figure 20B shows the neuron Nj(k) of the k-th layer, the signals input to the neuron Nj(k), and the signals output from the neuron Nj(k). In addition, Figure 20B shows the weight data w1(k-1)j(k), wi(k-1)j(k), wm(k-1)j(k) between the (k-1)-th and k-th layers, and the activation function f(uj(k)) of the k-th layer.

[0250] Specifically, the output signals z1(k-1) to zm(k-1) of each of the neurons N1(k-1) to Nm(k-1) in the (k-1)th layer are output to the neuron Nj(k). Then, the neuron Nj(k) generates zj(k) based on z1(k-1) to zm(k-1) and outputs zj(k) as an output signal to each neuron in the (k+1)th layer (not shown).

[0251] <<Structure Example 1 of the Operational Circuit>> Next, an example of the structure of an operational circuit according to an embodiment of the present invention will be described.

[0252] The operational circuit 1350 shown in FIG21 includes, for example, an array unit ALP, a circuit ILD, a circuit WLD, a circuit XLD, a circuit AFP, and circuits TW[1] to TW[n].

[0253] Each of the circuit ILD and the circuit AFP is electrically connected to the circuit TW[1] to the circuit TW[n] and the wiring OL[1] to the wiring OL[n] and the wiring OLB[1] to the wiring OLB[n].

[0254] Circuit TW[1] to circuit TW[n] are used as switching circuits. In each of circuits TW[1] to circuit TW[n], the output signals of wiring OL[1] to wiring OL[n] and wiring OLB[1] to wiring OLB[n] can be switched to be input to circuit AFP and the output signals of circuit ILD can be input to wiring OL[1] to wiring OL[n] and wiring OLB[1] to wiring OLB[n].

[0255] Circuit WLD is electrically connected to wiring WL[1] to wiring WL[m] and wiring WX1L[1] to wiring WX1L[m]. Circuit XLD is electrically connected to wiring WX1L[1] to wiring WX1L[m].

[0256] The operational circuit 1350 shown in FIG21 includes an array unit ALP configured as m×n matrix circuits MP. In FIG21, the circuit MP located in row i and column j (here, i is an integer greater than or equal to 1 and less than or equal to m, and j is an integer greater than or equal to 1 and less than or equal to n) is denoted as circuit MP[i,j]. Note that in FIG21, only circuits MP[1,1], MP[1,n], MP[i,j], MP[m,n], and MP[m,1] are shown, while other circuits MP are omitted.

[0257] Circuit MP[i,j] is electrically connected to wiring WL[i], wiring WX1L[i], wiring OL[j], and wiring OLB[j].

[0258] Circuit MP[i,j] has, for example, the function of maintaining weighting coefficients (also known as first data). Weighting coefficients are sometimes also referred to as weight values. Specifically, circuit MP[i,j] maintains the information corresponding to the weighting coefficients input from wiring OL[j] and wiring OLB[j].

[0259] The circuit ILD has the function of outputting information of the first data corresponding to the weight coefficients to wiring OL[1] to wiring OL[n] and wiring OLB[1] to wiring OLB[n].

[0260] As information corresponding to the weighting coefficient, for example, potential, resistance value, or current quantity can be used. When using current quantity as information corresponding to the weighting coefficient, a current output type digital-to-analog converter (IDAC) can be used to generate the current to be input.

[0261] In addition, circuit MP[i,j] has the function of outputting the product of the input value (also referred to as the second data) input from wiring WX1L[i) and the weighting coefficient (first data). Specifically, for example, circuit MP[i,j] outputs a current corresponding to the product of the first data and the second data to wiring OL[j] and wiring OLB[j] by inputting the second data from wiring WX1L[i]. Note that FIG21 shows an example of the case in which wiring OL[j] and wiring OLB[j] are configured, but one embodiment of the present invention is not limited to this. Either wiring OL[j] or wiring OLB[j] may also be configured.

[0262] Circuit XLD has the function of supplying second data as input values ​​to wiring WX1L[1] to wiring WX1L[m].

[0263] Information corresponding to the input value can be, for example, voltage and current. When using current as information corresponding to the input value, a current output type digital-to-analog converter circuit can be used to generate the current to be input.

[0264] The current corresponding to the product of the first and second data output from circuit MP[1,j] to circuit MP[m,j] is added together and output to wiring OL[j] and wiring OLB[j]. Thus, the arithmetic circuit can perform the product sum operation of the weighting coefficient and the input value.

[0265] Furthermore, the circuit XLD and the circuit WLD have the function of selectively writing information corresponding to the first data input from the circuit ILD to the circuit MP. For example, when writing information to the circuit MP[i,1] to the circuit MP[i,n] located in the i-th row of the array section ALP, the circuit XLD, for example, supplies a signal to the wiring WX1L[i] to enable or disable the first writing switching element in each of the circuit MP[i,1] to the circuit MP[i,n], and supplies the wiring WX1L with a potential to disable the first writing switching element in each of the circuit MPs other than the i-th row. In addition, the circuit WLD, for example, supplies a signal to the wiring WL[i] to enable or disable the second writing switching element in each of the circuit MP[i,1] to the circuit MP[i,n], and supplies the wiring WL with a potential to disable the second writing switching element in each of the circuit MPs other than the i-th row.

[0266] Circuit AFP includes circuits ACTF[1] to ACTF[n]. Circuit ACTF[j] is electrically connected to wiring OL[j] and wiring OLB[j] through circuit TW[j] which has a switching function. Circuit ACTF[j] can generate a signal as zj(k) output based on information (e.g., potential or current) corresponding to the product sum operation result from the inputs of wiring OL[j] and wiring OLB[j]. Circuit AFP can compare information (e.g., potential or current) corresponding to the product sum operation result from the inputs of wiring OL[1] to wiring OL[n] and wiring OLB[1] to wiring OLB[n] and generate a signal corresponding to the comparison result as z1(k) to zn(k) output.

[0267] <<Circuit MP>> Next, the circuit MP will be explained. Figure 22 shows a structural example of a circuit that can be applied to circuit MP[i,j]. Circuit MP includes circuit MC and circuit MCr. In addition, circuit MC includes transistors M1 to M3 and capacitor C1. In addition, for example, a holding part HC is formed by transistor M2 and capacitor C1.

[0268] In the circuit MP of Figure 22, the circuit MCr has a circuit structure that is approximately the same as that of the circuit MC. Therefore, in order to distinguish it from the circuit elements included in the circuit MC, the symbols of the circuit elements included in the circuit MCr are marked with "r".

[0269] The transistors M1 to M3 shown in Figure 22 are, for example, n-channel transistors with a multi-gate structure including gates above and below the channel. All transistors M1 to M3 include a first gate and a second gate.

[0270] Furthermore, the operational circuit 1350 described in this section does not depend on the connection structure of the back gate of the transistor. In the transistors M1 to M3 shown in FIG. 22, the back gate is shown but its connection relationship is not shown; however, the electrical connection of the back gate can be determined during design. For example, in a transistor including a back gate, to increase the on-state current of the transistor, the gate can be electrically connected to the back gate. In other words, for example, the gate of transistor M2 can also be electrically connected to the back gate. Additionally, for example, in a transistor including a back gate, to change the threshold voltage of the transistor or reduce the off-state current of the transistor, wiring electrically connected to external circuits is provided, and the back gate of the transistor is supplied with potential by the external circuits. The same applies to transistors described in other parts of the specification or other diagrams besides FIG. 22.

[0271] In this specification, unless otherwise specified, the off-state current refers to the drain current when the transistor is in the off state (also known as the non-conducting state or the blocked state). Unless otherwise specified, in an n-channel transistor, the off state refers to the state where the voltage Vgs between the gate and source is lower than the critical voltage Vth (in a p-channel transistor, Vgs is higher than Vth).

[0272] Furthermore, the semiconductor device of one embodiment of the present invention does not depend on the structure of the transistors included in the semiconductor device. A single-gate transistor may also be used. In addition, a structure in which some transistors include a back gate and other transistors do not include a back gate may also be used. The transistors described in other parts of the specification or shown in other figures, except for the circuit diagram shown in FIG22, are the same.

[0273] Furthermore, in this specification and the like, transistors of various structures can be used as transistors. Therefore, there is no limitation on the type of transistor used. As an example of a transistor, a transistor having monocrystalline silicon or a transistor having a non-monocrystalline semiconductor film represented by amorphous silicon, polycrystalline silicon (including low-temperature polycrystalline silicon), or microcrystalline (also called nanocrystalline or semi-amorphous) silicon can be used. Alternatively, thin-film transistors (TFTs) that thin-film these semiconductors can be used. The use of TFTs has various advantages. For example, since they can be manufactured at lower temperatures compared to the case of manufacturing monocrystalline silicon, it is possible to reduce manufacturing costs or to scale up the manufacturing apparatus.

[0274] Furthermore, as an example of a transistor, an OS transistor (compound semiconductor, such as silicon germanium (SiGe), gallium arsenide (GaAs), etc.) or oxide semiconductor can be used. Alternatively, a thin-film transistor, which is a thin film of the aforementioned compound semiconductor or oxide semiconductor, can be used. Moreover, these compound semiconductors or oxide semiconductors can be used not only for the channel portion of the transistor but also for other applications. For example, these compound semiconductors or oxide semiconductors can be used for wiring, resistors, pixel electrodes, transparent electrodes, etc. Since these components can be formed simultaneously with the transistor, costs can be reduced.

[0275] In addition, the oxide semiconductor described above may also use an oxide containing at least one of indium, element M (e.g., element M may be selected from one or more of aluminum, gallium, yttrium, copper, vanadium, beryllium, boron, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten and magnesium, etc.), and zinc.

[0276] As an example of a transistor, a transistor formed by inkjet printing or printing can be used. Therefore, it can be manufactured at room temperature, under low vacuum, or on a large substrate. Therefore, it can be manufactured even without using a reticle, so the transistor layout can be easily changed. Alternatively, because it can be manufactured without using photoresist, material costs and the number of processes can be reduced. Alternatively, because the film can be deposited only on the required areas, it is less expensive and less wasteful of materials compared to manufacturing methods that deposit a film on the entire surface and then etch it.

[0277] As an example of a transistor, a transistor having an organic semiconductor or a carbon nanotube can be used. This allows the transistor to be formed on a flexible substrate. Devices using transistors having organic semiconductors or carbon nanotubes are shock-resistant.

[0278] In circuit MP of Figure 22, the first terminal of transistor M1 is electrically connected to wiring VE. The second terminal of transistor M1 is electrically connected to the first terminal of transistor M3. The gate of transistor M1 is electrically connected to the first terminal of capacitor C1 and the first terminal of transistor M2. The second terminal of capacitor C1 is electrically connected to wiring VE. The second terminal of transistor M2 is electrically connected to wiring OL. The gate of transistor M2 is electrically connected to wiring WL. The second terminal of transistor M3 is electrically connected to wiring OL, and the gate of transistor M3 is electrically connected to wiring WX1L.

[0279] The connection structure in circuit MCr that differs from that in circuit MC will be explained. The second terminal of transistor M3r is not electrically connected to wiring OL, but to wiring OLB. The first terminal of transistor M1r and the second terminal of capacitor C1r are electrically connected to wiring VEr.

[0280] Note that in the holding section HC shown in FIG22, the electrical connection point between the gate of transistor M1, the first terminal of capacitor C1 and the first terminal of transistor M2 is denoted as node n1.

[0281] The holding section HC has the function of maintaining a potential corresponding to the weighting coefficient (first data). By inputting a specified current from the wiring OL when transistors M2 and M3 are in the on state, a potential corresponding to that current is written to capacitor C1. Then, transistor M2 is turned off, and the holding section HC included in the circuit MC of FIG22 maintains this potential. Thus, the potential of node n1 can be maintained as a potential corresponding to the weighting coefficient (first data). At this time, when current is input from the wiring OL, a potential corresponding to the magnitude of that current can be maintained in capacitor C1. Therefore, when outputting the first data, the non-uniformity of the current characteristics (critical voltage, etc.) of transistor M1 can be reduced.

[0282] The current input to the wiring OL can be input and generated using a current output type digital-to-analog converter circuit.

[0283] Furthermore, in order to maintain the potential of node n1 for a long period of time, transistor M2 is preferably a transistor with low off-state current. As a transistor with low off-state current, an OS transistor can be used, for example. Since an oxide semiconductor with a large band gap is used in the channel formation region of the OS transistor, the off-state current of the OS transistor can be reduced.

[0284] Alternatively, a transistor including a back gate can be used as transistor M2, and a low quasi-potential can be applied to the back gate to cause the critical voltage to drift to the positive side, thereby reducing the off-state current.

[0285] Thus, a computational circuit with high computational accuracy is provided. Alternatively, a computational circuit with high reliability is provided.

[0286] <<Structure Example 2 of Operational Circuit>> In addition, as another example, the operational circuit MAC1 that performs product summation is described.

[0287] Figure 23 shows an example of the structure of an operational circuit that performs a product sum operation on a first data point that is positive or "0" and a second data point that is positive or "0". The operational circuit MAC1 shown in Figure 23 is a circuit that performs a product sum operation on the first data point corresponding to the potential held by each unit and the second data point that is input, and uses the result of the product sum operation to calculate the activation function. In addition, the first data point and the second data point can be, for example, analog data or multi-valued data (discrete data).

[0288] This operational circuit also functions as a memory for holding first data, so it can also be called a memory. In particular, when analog data is used as the first data, it can also be called analog memory.

[0289] The operational circuit MAC1 includes circuit WCS, circuit XCS, circuit WSD, circuit SWS1, circuit SWS2, unit array CA and conversion circuit ITRZ[1] to conversion circuit ITRZ[n].

[0290] The cell array CA includes cells IM[1,1] to IM[m,n] (where m is an integer greater than or equal to 1 and n is an integer greater than or equal to 1) and cells IMref[1] to IMref[m]. Each of cells IM[1,1] to IM[m,n] has the function of maintaining a potential equivalent to the current amount corresponding to the first data, and cells IMref[1] to IMref[m] has the function of supplying a potential to wirings XCL[1] to XCL[m] corresponding to the second data required when performing a product operation with the maintained potential.

[0291] In addition, in the cell array CA of FIG23, the cells are configured as a matrix with n+1 cells in the row direction and m cells in the column direction. However, the cell array CA may also have a matrix structure with cells configured as having more than 2 cells in the row direction and more than 1 cell in the column direction.

[0292] Units IM[1,1] to IM[m,n] each include, for example, transistor F1, transistor F2 and capacitor C5, and units IMref[1] to IMref[m] each include, for example, transistor F1m, transistor F2m and capacitor C5m.

[0293] In particular, the dimensions (e.g., channel length, channel width, transistor structure, etc.) of the transistors F1 included in each of units IM[1,1] to IM[m,n] are preferably equal, and the dimensions of the transistors F2 included in each of units IM[1,1] to IM[m,n] are preferably equal. Furthermore, the dimensions of the transistors F1m included in each of units IMref[1] to IMref[m] are preferably equal, and the dimensions of the transistors F2m included in each of units IMref[1] to IMref[m] are preferably equal. Additionally, the dimensions of transistors F1 and F1m are preferably equal, and the dimensions of transistors F2 and F2m are preferably equal.

[0294] Note that unless otherwise specified, this includes the case where transistors F1 and F1m operate in the linear region when in the ON state. That is, the gate voltage, source voltage, and drain voltage of each of the above transistors are sometimes appropriately biased to make the transistor operate in the linear region. Note that one embodiment of the present invention is not limited to this. For example, transistors F1 and F1m may operate in the saturation region when in the ON state, or sometimes in the linear region and sometimes in the saturation region.

[0295] Furthermore, unless otherwise specified, this includes the case where transistors F2 and F2m operate in the subcritical region (that is, the gate-source voltage of transistor F2 or F2m is lower than the critical voltage, and more preferably, the drain voltage increases exponentially with respect to the gate-source voltage). In other words, this includes the case where the gate voltage, source voltage, and drain voltage of each of the above transistors are appropriately biased so that the transistor operates in the subcritical region. Therefore, this includes the case where transistors F2 and F2m operate with off-state current flowing between the source and drain.

[0296] Transistor F1 and / or transistor F1m are preferably, for example, the OS transistor described above. Furthermore, the channel forming region of transistor F1 and / or transistor F1m is more preferably an oxide containing at least one of indium, element M (e.g., one or more selected from aluminum, gallium, yttrium, copper, vanadium, beryllium, boron, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, and magnesium), and zinc.

[0297] By using an OS transistor as transistor F1 and / or transistor F1m, leakage current of transistor F1 and / or transistor F1m can be suppressed, thereby reducing the power consumption of the arithmetic circuit. Specifically, the leakage current from the holding node to the write word line when transistor F1 and / or transistor F1m are in a non-conducting state can be made very small, thus reducing the potential update work of the holding node and thereby reducing the power consumption of the arithmetic circuit. In addition, by making the leakage current from the holding node to the write word line very small, the cell can maintain the potential of the holding node for a longer period of time, thereby improving the arithmetic accuracy of the arithmetic circuit.

[0298] Furthermore, by using OS transistors as transistors F2 and / or F2m, operation can be achieved over a wider current range in the subcritical region, thereby reducing current consumption. Additionally, by using OS transistors as transistors F2 and / or F2m, transistors F1, F1m, and F2 and / or F2m can be manufactured simultaneously, which can sometimes shorten the fabrication process of the operational circuit. Moreover, in addition to OS transistors, transistors containing silicon in the channel formation region (hereinafter referred to as Si transistors) can also be used as transistors F2 and / or F2m. As silicon, for example, amorphous silicon (sometimes called hydrogenated amorphous silicon), microcrystalline silicon, polycrystalline silicon (including low-temperature polycrystalline silicon), or monocrystalline silicon can be used.

[0299] Furthermore, when computational circuits are highly integrated onto a chip, heat is sometimes generated within the chip due to circuit driving. This heat causes the transistor's temperature to rise, thus altering its characteristics, potentially leading to changes in field-effect mobility or a decrease in operating frequency. OS transistors have higher heat resistance than Si transistors, making them less susceptible to changes in field-effect mobility due to temperature variations and less prone to a decrease in operating frequency. Moreover, OS transistors maintain an exponential increase in drain current relative to gate-source voltage even at higher temperatures. Therefore, by using OS transistors, the summation operations described later can be easily performed even in high-temperature environments. When constructing computational circuits with high resistance to driving heat, OS transistors are preferable as the transistor.

[0300] In each of units IM[1,1] to IM[m,n], the first terminal of transistor F1 is electrically connected to the gate of transistor F2. The first terminal of transistor F2 is electrically connected to wiring VE. The first terminal of capacitor C5 is electrically connected to the gate of transistor F2.

[0301] In each of units IMref[1] to IMref[m], the first terminal of transistor F1m is electrically connected to the gate of transistor F2m. The first terminal of transistor F2m is electrically connected to wiring VE. The first terminal of capacitor C5m is electrically connected to the gate of transistor F2m.

[0302] Furthermore, the operational circuit described in this section does not depend on the polarity of the transistors in the operational circuit. For example, transistors F1 and F2 shown in FIG23 are n-channel transistors, but some or all of them can be replaced with p-channel transistors.

[0303] The examples of changes in the structure and polarity of the above-mentioned transistors are not limited to the use of transistors F1 and F2. For example, the same applies to transistors F1m, F2m, F3[1] to F3[n], F4[1] to F4[n] described later, and transistors described in other parts of the specification or other diagrams.

[0304] Wire VE is used to transmit current between the first and second terminals of each transistor F2 in units IM[1,1], IM[m,1], IM[1,n], and IM[m,n], and is also used to transmit current between the first and second terminals of each transistor F2m in units IMref[1] and IMref[m]. For example, wire VE is used to supply a constant voltage. This constant voltage can be, for example, a low-level potential, ground potential, etc.

[0305] In unit IM[1,1], the second terminal of transistor F1 is electrically connected to wiring WCL[1], and the gate of transistor F1 is electrically connected to wiring WSL[1]. The second terminal of transistor F2 is electrically connected to wiring WCL[1], and the second terminal of capacitor C5 is electrically connected to wiring XCL[1]. Note that in unit IM[1,1] shown in FIG23, the connection part of the first terminal of transistor F1, the gate of transistor F2 and the first terminal of capacitor C5 is represented as node NN[1,1].

[0306] In unit IM[m,1], the second terminal of transistor F1 is electrically connected to wiring WCL[1], and the gate of transistor F1 is electrically connected to wiring WSL[m]. The second terminal of transistor F2 is electrically connected to wiring WCL[1], and the second terminal of capacitor C5 is electrically connected to wiring XCL[m]. Note that in unit IM[m,1] shown in FIG23, the connection part of the first terminal of transistor F1, the gate of transistor F2 and the first terminal of capacitor C5 is represented as node NN[m,1].

[0307] In unit IM[1,n], the second terminal of transistor F1 is electrically connected to wiring WCL[n], and the gate of transistor F1 is electrically connected to wiring WSL[1]. The second terminal of transistor F2 is electrically connected to wiring WCL[n], and the second terminal of capacitor C5 is electrically connected to wiring XCL[1]. Note that in unit IM[1,n] shown in FIG23, the connection part of the first terminal of transistor F1, the gate of transistor F2 and the first terminal of capacitor C5 is represented as node NN[1,n].

[0308] In cell IM[m, n], the second terminal of transistor F1 is electrically connected to wiring WCL[n], and the gate of transistor F1 is electrically connected to wiring WSL[m]. The second terminal of transistor F2 is electrically connected to wiring WCL[n], and the second terminal of capacitor C5 is electrically connected to wiring XCL[m]. Note that in cell IM[m, n] shown in Figure 23, the connection between the first terminal of transistor F1, the gate of transistor F2, and the first terminal of capacitor C5 is represented as node NN[m, n].

[0309] In unit IMref[1], the second terminal of transistor F1m is electrically connected to wiring XCL[1], and the gate of transistor F1m is electrically connected to wiring WSL[1]. The second terminal of transistor F2m is electrically connected to wiring XCL[1], and the second terminal of capacitor C5m is electrically connected to wiring XCL[1]. Note that in unit IMref[1] shown in FIG23, the connection part of the first terminal of transistor F1m, the gate of transistor F2m and the first terminal of capacitor C5m is represented as node NNref[1].

[0310] In unit IMref[m], the second terminal of transistor F1m is electrically connected to wiring XCL[m], and the gate of transistor F1m is electrically connected to wiring WSL[m]. The second terminal of transistor F2m is electrically connected to wiring XCL[m], and the second terminal of capacitor C5m is electrically connected to wiring XCL[m]. Note that in unit IMref[m] shown in Figure 23, the connection between the first terminal of transistor F1m, the gate of transistor F2m, and the first terminal of capacitor C5m is represented as node NNref[m].

[0311] The above nodes NN[1,1], NN[m,1], NN[1,n], NN[m,n], NNref[1] and NNref[m] are used as the holding nodes of each unit.

[0312] In units IM[1,1] to IM[m,n], for example, when transistor F1 is in the ON state, transistor F2 has a diode connection structure. The constant voltage supplied by wiring VE is set to ground potential (GND). Transistor F1 is in the ON state, and a current of magnitude I flows from wiring WCL to the second terminal of transistor F2. At this time, the potential of the gate (node ​​NN) of transistor F2 is determined according to the current of magnitude I. Since transistor F1 is in the ON state, ideally, the potential of the second terminal of transistor F2 is equal to that of the gate (node ​​NN) of transistor F2. Here, by turning off transistor F1, the potential of the gate (node ​​NN) of transistor F2 is maintained. Thus, transistor F2 allows a current of magnitude I corresponding to the ground potential of the first terminal of transistor F2 and the potential of the gate (node ​​NN) of transistor F2 to flow between the source and drain of transistor F2. In this specification and the like, such work is referred to as “designing the current flow rate between the source and drain of transistor F2 as I”, etc.

[0313] Circuit SWS1 includes, for example, transistors F3[1] to F3[n]. The first terminal of transistor F3[1] is electrically connected to wiring WCL[1], the second terminal of transistor F3[1] is electrically connected to circuit WCS, and the gate of transistor F3[1] is electrically connected to wiring SWL1. The first terminal of transistor F3[n] is electrically connected to wiring WCL[n], the second terminal of transistor F3[n] is electrically connected to circuit WCS, and the gate of transistor F3[n] is electrically connected to wiring SWL1.

[0314] For example, OS transistors that can be used for transistors F1 and / or F2 can be used as transistors F3[1] to F3[n].

[0315] Circuit SWS1 is used to make circuit WCS and wiring WCL[1] to wiring WCL[n] in a conducting or non-conducting state respectively.

[0316] Circuit SWS2 includes, for example, transistors F4[1] to F4[n]. The first terminal of transistor F4[1] is electrically connected to wiring WCL[1], the second terminal of transistor F4[1] is electrically connected to the input terminal of the conversion circuit ITRZ[1], and the gate of transistor F4[1] is electrically connected to wiring SWL2. The first terminal of transistor F4[n] is electrically connected to wiring WCL[n], the second terminal of transistor F4[n] is electrically connected to the input terminal of the conversion circuit ITRZ[n], and the gate of transistor F4[n] is electrically connected to wiring SWL2.

[0317] For example, an OS transistor that can be used for transistors F1 and / or F2 can be used as transistor F4[1] to F4[n].

[0318] Circuit SWS2 is used to make the wiring WCL[1] and the switching circuit ITRZ[1] and the wiring WCL[n] and the switching circuit ITRZ[n] in a conducting or non-conducting state.

[0319] Circuit WCS has the function of supplying data to each cell stored in the cell array CA.

[0320] Circuit XCS is electrically connected to wiring XCL[1] to wiring XCL[m]. Circuit XCS has the function of allowing the current corresponding to the reference data or the current corresponding to the second data to flow through cells IMref[1] to IMref[m] in the cell array CA.

[0321] Circuit WSD is electrically connected to wiring WSL[1] to wiring WSL[m]. Circuit WSD has the function of supplying a specified signal to wiring WSL[1] to wiring WSL[m] to select the row of memory cell CA to which the first data is written when writing the first data to cells IM[1,1] to cells IM[m,n].

[0322] In addition, the circuit WSD is electrically connected to wiring SWL1 and wiring SWL2, for example. The circuit WSD has the function of supplying a specified signal to wiring SWL1 to put the circuit WCS and the cell array CA into a conducting state or a non-conducting state, and supplying a specified signal to wiring SWL2 to put the switching circuit ITRZ[1] to the switching circuit ITRZ[n] and the cell array CA into a conducting state or a non-conducting state.

[0323] The conversion circuits ITRZ[1] and ITRZ[n] each include, for example, an input terminal and an output terminal. For example, the output terminal of the conversion circuit ITRZ[1] is electrically connected to the wiring OL[1], and the output terminal of the conversion circuit ITRZ[n] is electrically connected to the wiring OL[n].

[0324] The conversion circuits ITRZ[1] to ITRZ[n] each have the function of converting the current input to the input terminal into a voltage corresponding to the current and outputting it from the output terminal. This voltage can be, for example, an analog voltage or a digital voltage. In addition, the conversion circuits ITRZ[1] to ITRZ[n] may each include a function operation circuit. In this case, for example, the converted voltage can be used to perform a function operation by the operation circuit, and the operation result can be output to wiring OL[1] to wiring OL[n].

[0325] In particular, when performing operations on hierarchical neural networks, the functions mentioned above can be, for example, the sigmoid function, tanh function, softmax function, ReLU function, or finite function.

[0326] The circuit WCS shown in Figure 23 can be a current output type digital-to-analog converter circuit. Additionally, the circuit XCS shown in Figure 23 can be a current output type digital-to-analog converter circuit.

[0327] At least a portion of the structural examples shown in this embodiment and the corresponding diagrams can be appropriately combined with other structural examples or diagrams.

[0328] At least a portion of this embodiment may be implemented in combination with other embodiments described in this specification.

[0329] Embodiment 3 In this embodiment, a display device that can be installed in an electronic device according to one embodiment of the present invention will be described. The display unit DSP described in the above embodiments can be applied to the display device described in this embodiment.

[0330] <Example of Display Device Structure> FIG24 is a cross-sectional view showing an example of a display device that can be installed in an electronic device according to one embodiment of the present invention. The display device 100 shown in FIG24 has, for example, a structure in which pixel circuits and driving circuits are provided on a substrate 310.

[0331] Specifically, the display device 100 includes, for example, a circuit layer SICL, a wiring layer LINL, and a pixel layer PXAL. The circuit layer SICL includes, for example, a substrate 310 on which a transistor 300 is formed. Furthermore, a wiring layer LINL is disposed above the transistor 300, and the wiring layer LINL is provided with wiring for electrically connecting the transistor 300, the transistor 200 (described later), and the light-emitting devices 150a and 150b (described later). Furthermore, a pixel layer PXAL is disposed above the wiring layer LINL, and the pixel layer PXAL includes, for example, the transistor 200 and the light-emitting devices 150 (light-emitting devices 150a and 150b in FIG. 24).

[0332] The substrate 310 can be, for example, a semiconductor substrate (e.g., a single-crystal substrate) made of silicon or germanium. In addition to semiconductor substrates, the substrate 310 can also be, for example, an SOI (Silicon On Insulator) substrate, a glass substrate, a quartz substrate, a plastic substrate, a sapphire glass substrate, a metal substrate, a stainless steel substrate, a substrate including stainless steel foil, a tungsten substrate, a substrate including tungsten foil, a flexible substrate, a laminated film, or a paper or substrate film including fibrous materials. Examples of glass substrates include barium borosilicate glass, aluminum borosilicate glass, or soda-lime glass. Examples of flexible substrates, laminated films, or substrate films include plastics such as polyethylene terephthalate (PET), polyethylene naphthalate (PEN), polyethersulfone (PES), and polytetrafluoroethylene (PTFE). Other examples of flexible substrates, laminated films, or substrate films include synthetic resins such as acrylic resins. Other examples of flexible substrates, laminating films, or substrate films include polypropylene, polyester, fluorinated polyethylene, or polyvinyl chloride. Other examples of flexible substrates, laminating films, or substrate films include polyamide, polyimide, aromatic polyamide, epoxy resin, inorganic vapor-deposited films, or paper. When the manufacturing process of the display device 100 includes heat treatment, a material with high heat resistance is preferably selected as the substrate 310.

[0333] In addition, in this embodiment, it is assumed that the substrate 310 is a semiconductor substrate containing silicon as a material.

[0334] Transistor 300 is disposed on substrate 310 and includes a component separation layer 312, a conductor 316, an insulator 315, an insulator 317, a semiconductor region 313 formed by a portion of substrate 310, and low-resistance regions 314a and 314b serving as source or drain regions. Therefore, transistor 300 is different from Si transistor. Note that FIG24 shows a structure in which one of the source and drain of transistor 300 is electrically connected to conductors 330, 356, and 366 (described later) through conductor 328, but the electrical connection structure of a semiconductor device according to one embodiment of the present invention is not limited to this. For example, a semiconductor device according to one embodiment of the present invention may also employ a structure in which the gate of transistor 300 is electrically connected to conductors 330, 356, and 366 through conductor 328.

[0335] For example, the transistor 300 can have a Fin-type structure by covering the conductor 316 with an insulator 315, which serves as a gate insulating film, on the top surface of the semiconductor region 313 and the side surface in the channel width direction. By giving the transistor 300 a Fin-type structure, the effective channel width is increased, thus improving the on-state characteristics of the transistor 300. In addition, since the influence of the electric field of the gate electrode can be increased, the off-state characteristics of the transistor 300 can be improved.

[0336] In addition, the transistor 300 can be a p-channel transistor or an n-channel transistor. Alternatively, multiple transistors 300 of both p-channel and n-channel types can be used.

[0337] The region forming the channel of the semiconductor region 313, the region theren, the low-resistance region 314a and low-resistance region 314b that serve as the source or drain region, are preferably composed of silicon-based semiconductors, and more preferably composed of single-crystal silicon. Alternatively, the aforementioned regions may also be formed using materials comprising germanium (Ge), silicon germanium (SiGe), gallium arsenide (GaAs), aluminum gallium arsenide (GaAlAs), or gallium nitride (GaN). Furthermore, the aforementioned regions may also use silicon, where stress is applied to the crystal lattice to change the interplanar spacing and control the effective mass. Additionally, the transistor 300 may, for example, be a HEMT (High Electron Mobility Transistor) using gallium arsenide and aluminum gallium arsenide.

[0338] The conductor 316 used as the gate electrode can be a conductive material such as silicon, a semiconductor material, a metal material, an alloy material, or a metal oxide material containing elements such as arsenic or phosphorus that impart n-type conductivity or elements such as boron that impart p-type conductivity.

[0339] Furthermore, since the work function is determined by the material of the conductor, the critical voltage of the transistor can be adjusted by selecting the material of the conductor. Specifically, it is preferable to use one or both of titanium nitride and tantalum nitride as the conductor. In order to have both conductivity and embeddability, it is preferable to use a stack of metallic materials of one or both of tungsten and aluminum as the conductor, especially tungsten is preferred in terms of heat resistance.

[0340] To separate the multiple transistors formed on the substrate 310 from each other, a device separation layer 312 is provided. The device separation layer can be formed, for example, by the LOCOS (Local Oxidation of Silicon) method, the STI (Shallow Trench Isolation) method, or the mesa isolation method.

[0341] Note that the structure of transistor 300 shown in Figure 24 is only an example and is not limited to the above structure. An appropriate transistor can be used depending on the circuit structure or driving method. For example, transistor 300 may also have a planar structure instead of a Fin-type structure.

[0342] As shown in Figure 24, the transistor 300 has insulators 320, 322, 324 and 326 stacked sequentially from one side of the substrate 310.

[0343] As insulators 320, 322, 324 and 326, one or more selected from silicon oxide, silicon oxynitride, silicon oxynitride, silicon nitride, aluminum oxide, aluminum oxynitride, aluminum oxynitride and aluminum nitride may be used.

[0344] The insulator 322 can also be used as a planarization film to flatten the steps generated by the transistor 300 covered by the insulator 320 and the insulator 322. For example, in order to improve the flatness of the top surface of the insulator 322, its top surface can also be planarized by a planarization process such as chemical mechanical polishing (CMP).

[0345] Furthermore, the insulator 324 is preferably a barrier insulating film that prevents impurities such as water and hydrogen from diffusing from the substrate 310 or the transistor 300 to the area above the insulator 324 (e.g., the area where the transistor 200, light-emitting device 150a, light-emitting device 150b, etc. are disposed). Therefore, the insulator 324 is preferably an insulating material that has the function of suppressing the diffusion of impurities such as hydrogen atoms, hydrogen molecules, and water molecules (making it difficult for the aforementioned impurities to permeate). In addition, depending on the situation, the insulator 324 is preferably an insulating material that has the function of suppressing the diffusion of impurities such as nitrogen atoms, nitrogen molecules, nitrogen oxide molecules (N2O, NO, NO2, etc.), and copper atoms (making it difficult for the aforementioned oxygen to permeate). Alternatively, it is preferably an insulating material that has the function of suppressing the diffusion of oxygen (e.g., one or both of oxygen atoms and oxygen molecules).

[0346] For example, as an example of a membrane that is hydrogen-barrier, silicon nitride formed by CVD can be used.

[0347] The amount of hydrogen removed can be measured, for example, by thermal desorption spectroscopy (TDS). For example, in the TDS analysis, when the membrane surface temperature is in the range of 50°C to 500°C, and the amount of hydrogen removed, converted into hydrogen atoms, is converted into the amount per unit area of ​​the insulator 324, the amount of hydrogen removed from the insulator 324 is 10 × 10¹⁵ atoms / cm² or less, preferably 5 × 10¹⁵ atoms / cm² or less.

[0348] Note that the dielectric constant of insulator 326 is preferably lower than that of insulator 324. For example, the relative dielectric constant of insulator 326 is preferably less than 4, and more preferably less than 3. For example, the relative dielectric constant of insulator 326 is preferably less than 0.7 times, and more preferably less than 0.6 times, the relative dielectric constant of insulator 324. By using a material with a low dielectric constant in the interlayer film, parasitic capacitance generated between wirings can be reduced.

[0349] In addition, insulators 320, 322, 324, and 326 have embedded conductors 328 and 330 that connect to light-emitting devices disposed above insulator 326. Furthermore, conductors 328 and 330 function as plugs or wiring. Note that sometimes the same component symbol is used to represent multiple conductors used as plugs or wiring. Furthermore, in this specification, wiring and plugs connected to wiring can also be a single component. That is, sometimes a portion of a conductor is used as wiring, and sometimes a portion of a conductor is used as a plug.

[0350] The materials used for each plug and wiring (conductor 328 and conductor 330) can be a single layer or a stack of conductive materials selected from one or more of metallic materials, alloy materials, metal nitride materials, and metal oxide materials. Preferably, high-melting-point materials such as tungsten or molybdenum, which combine heat resistance and conductivity, are used; tungsten is particularly preferred. Alternatively, low-resistance conductive materials such as aluminum or copper can be used. Using low-resistance conductive materials reduces wiring resistance.

[0351] Alternatively, a wiring layer may be formed on the insulator 326 and the conductor 330. For example, in FIG24, insulators 350, 352, and 354 are sequentially stacked on top of insulators 326 and conductors 330. Furthermore, a conductor 356 is formed within insulators 350, 352, and 354. The conductor 356 functions as a plug or wiring for connection to the transistor 300. Moreover, the conductor 356 can be formed using the same material as the conductors 328 and 330.

[0352] Furthermore, similar to insulator 324, insulator 350 is preferably an insulator that blocks hydrogen, oxygen, and water. Similarly to insulator 326, insulators 352 and 354 are preferably insulators with relatively low permittivity to reduce parasitic capacitance generated between wirings. In addition, insulators 362 and 364 are used as interlayer insulating films and planarization films. Furthermore, conductor 356 preferably contains a conductor that blocks hydrogen, oxygen, and water.

[0353] Tantalum nitride can be used as a conductor that blocks hydrogen. Furthermore, by layering tantalum nitride and highly conductive tungsten, hydrogen diffusion from the transistor 300 can be suppressed while maintaining the conductivity required for wiring. In this case, the tantalum nitride layer that blocks hydrogen is preferably in contact with the hydrogen-blocking insulator 350.

[0354] In addition, insulator 360, insulator 362 and insulator 364 are stacked sequentially on insulator 354 and conductor 356.

[0355] Furthermore, similar to insulator 324, insulator 360 is preferably made of an insulator that blocks impurities such as water and hydrogen. Therefore, insulator 360 can, for example, be made of a material that can be used in insulator 324, etc.

[0356] Insulators 362 and 364 are used as interlayer insulating films and planarization films. Furthermore, similar to insulator 324, insulators 362 and 364 are preferably insulators that block impurities such as water and hydrogen. Therefore, one or both of insulators 362 and 364 can be made from materials suitable for insulator 324.

[0357] Furthermore, insulators 360, 362, and 364 each have an opening formed in the region overlapping a portion of conductor 356, and conductor 366 is disposed such that it is embedded in the opening. Additionally, conductor 366 is also formed on insulator 362. Conductor 366 may function as a plug or wiring for connecting to transistor 300, for example. Furthermore, conductor 366 may be made of the same material as conductors 328 and 330.

[0358] In addition, insulator 370 and insulator 372 are sequentially stacked on insulator 364 and conductor 366.

[0359] Furthermore, similar to insulator 324, insulator 370 is preferably made of an insulator that blocks impurities such as water and hydrogen. Therefore, insulator 370 can, for example, be made of a material that can be used in insulator 324, etc.

[0360] Insulator 372 is used as an interlayer insulating film and a planarization film. Furthermore, similar to insulator 324, insulator 372 is preferably made of an insulator that blocks impurities such as water and hydrogen. Therefore, materials suitable for insulator 324 can be used for insulator 372.

[0361] Furthermore, insulators 370 and 372 each have an opening formed in the region where they overlap with a portion of conductor 366, and conductor 376 is disposed in such a way as to be embedded in the opening. In addition, conductor 376 is also formed on insulator 372. Then, conductor 376 is patterned into the shape of wiring, terminal or pad by etching or the like.

[0362] For example, copper, aluminum, tin, zinc, tungsten, silver, platinum or gold can be used as the conductor 376. In addition, the conductor 376 is preferably composed of the same material as the material included in the pixel layer PXAL for the conductor 216 described later.

[0363] Next, an insulator 380 is formed to cover the insulator 372 and the conductor 376, and then planarization is performed using chemical mechanical polishing (CMP) or the like until the conductor 376 is exposed. Thus, the conductor 376 can be formed on the substrate 310 as wiring, terminal or pad.

[0364] For example, similar to insulator 324, insulator 380 is preferably a barrier film that does not allow impurities such as water and hydrogen to diffuse. In other words, insulator 380 can use materials that are also suitable for insulator 324, etc. Alternatively, for example, similar to insulator 326, insulator 380 can also use an insulator with a relatively low permittivity to reduce parasitic capacitance generated between wirings. In other words, insulator 380 can also use materials that are also suitable for insulator 326.

[0365] The pixel layer PXAL, for example, includes a substrate 210, a transistor 200, a light-emitting device 150 (light-emitting device 150a and light-emitting device 150b in FIG. 24), and a substrate 102. Additionally, the pixel layer PXAL includes, for example, insulators 220, 222, 226, 250, 111, 112, 113, layer 161 (layers 161a and 161b in FIG. 24), insulator 162, and resin layer 163. Furthermore, the pixel layer PXAL includes, for example, conductors 216, 228, 230, 121 (conductors 121a and 121b in FIG. 24), conductor 122, and conductor 123.

[0366] In Figure 24, for example, insulator 202 and insulator 380 are both used as bonding layers. Insulator 202 is preferably composed of the same material as that used for insulator 380.

[0367] A substrate 210 is disposed above the insulator 202. In other words, the insulator 202 is disposed on the bottom surface of the substrate 210. As the substrate 210, it is preferable to use a substrate that can be used for the substrate 310. In addition, in the display device 100 of FIG24, it is assumed that the substrate 310 is a semiconductor substrate made of silicon.

[0368] For example, a transistor 200 is formed on the substrate 210. The transistor 200 is formed on the substrate 210, which is a semiconductor substrate made of silicon, and is therefore used as a Si transistor. For the structure of the transistor 200, please refer to the description of the transistor 300.

[0369] An insulator 220 and an insulator 222 are disposed above the transistor 200. The insulator 220 is used as an interlayer insulating film and a planarization film, for example, in the same manner as the insulator 320. In addition, the insulator 222 is used as an interlayer insulating film and a planarization film, for example, in the same manner as the insulator 322.

[0370] Furthermore, insulators 220 and 222 are provided with a plurality of openings. These openings are formed in regions overlapping the source and drain electrodes of transistor 200 and in regions overlapping the conductor 376. Conductors 228 are formed in the openings formed in the regions overlapping the source and drain electrodes of transistor 200. Insulators 214 are formed on the sides of the remaining openings formed in the regions overlapping the conductor 376, and conductors 216 are formed in the remaining openings. In particular, conductor 216 is sometimes referred to as a TSV (Through Silicon Via).

[0371] Conductor 216 or conductor 228 may, for example, use a material that is also suitable for conductor 328. In particular, conductor 216 is preferably made of the same material as conductor 376.

[0372] The insulator 214, for example, has the function of electrically insulating the substrate 210 from the conductor 216. In addition, the insulator 214 is preferably made of a material that can be used in both the insulator 320 and the insulator 324.

[0373] The insulator 380 and conductor 376 formed on the substrate 310 are bonded together with the insulator 202 and conductor 216 formed on the substrate 210, for example, by a bonding process.

[0374] As a process prior to the bonding process, for example, a planarization process is performed on one side of the substrate 310 to make the heights of the surfaces of the insulator 380 and the conductor 376 consistent. Similarly, a planarization process is performed on one side of the substrate 210 to make the heights of the insulator 202 and the conductor 216 consistent.

[0375] When bonding insulator 380 and insulator 202 during the bonding process, that is, bonding the insulating layers together, a hydrophilic bonding method can be used. In this method, after obtaining high flatness through polishing, the surfaces that have undergone hydrophilic treatment using oxygen plasma are brought into contact and temporarily bonded. Dehydration is then achieved through heat treatment, thereby achieving formal bonding. The hydrophilic bonding method also results in atomic-level bonding, thus achieving mechanically superior bonding.

[0376] When conductor 376 and conductor 216 are bonded, even when the conductors are bonded to each other, a surface activation bonding method can be used. In this method, bonding is achieved by removing the oxide film and impurity adsorbed layer on the surface through sputtering or the like, thus cleaning and activating the surface contacts. Alternatively, a diffusion bonding method that uses temperature and pressure to bond the surfaces can be used. Both of these methods can achieve atomic-level bonding, thus obtaining a bonding that is both electrically and mechanically excellent.

[0377] By performing the above bonding process, the conductor 376 on the substrate 310 side and the conductor 216 on the substrate 210 side can be electrically connected. In addition, the insulator 380 on the substrate 310 side and the insulator 202 on the substrate 210 side can be connected with sufficient mechanical strength.

[0378] When bonding substrate 310 and substrate 210, since the insulating layer and metal layer are mixed at each bonding surface, a combination of surface activation bonding and hydrophilic bonding methods can be used, for example. For example, a method can be used where the surface is cleaned after polishing, the surface of the metal layer is treated to prevent oxidation, and then a hydrophilic treatment is performed for bonding. Alternatively, a difficult-to-oxidize metal such as gold can be used as the surface of the metal layer, and a hydrophilic treatment can be performed.

[0379] Alternatively, bonding methods other than those described above can be used when bonding substrate 310 and substrate 210. For example, flip-chip bonding can be used as a method for bonding substrate 310 and substrate 210. Furthermore, when using flip-chip bonding, connection terminals such as bumps can be provided above the conductor 376 on the substrate 310 side or below the conductor 216 on the substrate 210 side. Examples of flip-chip bonding include: injecting resin containing dissimilar conductive particles between insulator 380 and insulator 202 and between conductor 376 and conductor 216 to bond them; and using silver-tin soldering for bonding. Additionally, when both the bumps and the conductors connected to the bumps are gold, ultrasonic welding can be used. Furthermore, in order to reduce physical stress such as impact and thermal stress, in addition to the flip-chip bonding method described above, underfill adhesive can be injected between insulator 380 and insulator 202 and between conductor 376 and conductor 216. Alternatively, for example, a wafer bonding film can be used when bonding substrate 310 and substrate 210.

[0380] Insulator 224 and insulator 226 are stacked sequentially on insulator 222, on insulator 214, on conductor 216 and on conductor 228.

[0381] Similar to insulator 324, insulator 224 is preferably a barrier insulating film that prevents impurities such as water and hydrogen from diffusing into the area above insulator 224. Therefore, as insulator 224, it is preferable to use a material that can be used for insulator 324.

[0382] Similar to insulator 326, insulator 226 is preferably an interlayer film with a low dielectric constant. Therefore, as insulator 226, it is preferable to use a material that can be used for insulator 326.

[0383] Furthermore, insulators 224 and 226 embed conductors 230 that are electrically connected to transistors 200, light-emitting devices 150, etc. The conductor 230 is also used as a plug or wiring. For example, materials suitable for conductors 328, conductor 330, etc., can be used as the conductor 230.

[0384] Insulator 250 and insulator 111 are stacked sequentially on insulator 224 and insulator 226.

[0385] Similar to insulator 324, insulator 250 is preferably an insulator that blocks impurities such as water or hydrogen. Therefore, materials that can be used in insulator 324, etc., can be used as insulator 250.

[0386] As the insulator 111, it is preferable to use an insulator that has the function of inhibiting the diffusion of water, hydrogen and oxygen, such as aluminum oxide, magnesium oxide, hafnium oxide, gallium oxide, indium gallium zinc oxide, silicon nitride or silicon oxynitride. For example, silicon nitride, which has higher hydrogen blocking properties, can be used as the insulator 111. In addition, for example, as the insulator 111, aluminum oxide or magnesium oxide, which have high performance in capturing and fixing hydrogen, are preferred.

[0387] Furthermore, the insulator 111 is preferably a film with high flatness. In this case, organic materials such as acrylic resin or polyimide can be used as the insulator 111.

[0388] Furthermore, an opening is formed in the region of each of the insulators 250 and 111 that overlaps with a portion of the conductor 230, and the conductor 121 is provided to cover the region where the insulator 111 is formed. In this specification, conductors 121a and 121b shown in FIG. 24 are collectively referred to as conductor 121. Conductor 230, for example, functions as a plug or wiring for connecting to the light-emitting device 150. Furthermore, conductor 121 can be made of the same material as conductors 328 and 330.

[0389] Furthermore, in the region where the conductor 121a is formed, the recess of the opening is preferably embedded with a layer 161a. And, preferably, a conductor 122a is formed on the conductor 121a and the layer 161a. Furthermore, in the region where the conductor 121b is formed, the recess of the opening is preferably embedded with a layer 161b. And, preferably, a conductor 122b is formed on the conductor 121b and the layer 161. In this specification, layers 161a and 161b shown in FIG. 24 are collectively referred to as layer 161. Furthermore, conductors 122a and 122b shown in FIG. 24 are collectively referred to as conductor 122.

[0390] In addition, at least one of conductors 121 and conductors 122 is sometimes referred to as a pixel electrode.

[0391] Layer 161 has the function of planarizing the recesses of conductor 121. By providing layer 161, the unevenness of the surface to which the EL layer is formed can be reduced, thereby improving coverage. In addition, by providing conductor 122 on conductor 121 and layer 161, the area overlapping with the recesses of conductor 121 can sometimes be used as a light-emitting area. As a result, the aperture ratio of the pixel can be improved.

[0392] Layer 161 can be either an insulating layer or a conductive layer. For example, layer 161 can be made of a material selected from various inorganic insulating materials, organic insulating materials, and conductive materials. In particular, layer 161 is preferably formed using an insulating material.

[0393] As the insulating layer 161, an insulating layer containing organic materials can be suitable. For example, acrylic resin, polyimide resin, epoxy resin, polyimide resin, polyimide-polyamide resin, silicone resin, benzocyclobutene resin, phenolic resin, and precursors of the above resins can be used as the insulating layer 161. Furthermore, a photosensitive resin can be used as layer 161. The photosensitive resin can be a positive or negative material.

[0394] By using a photosensitive resin, layer 161 can be manufactured using only an exposure and development process, which can reduce the impact of dry etching or wet etching on the surface of the conductor 121. In addition, by using a negative photosensitive resin forming layer 161, sometimes the same photomask forming layer 161 used when forming the opening of the insulator 111 can be used.

[0395] A conductor 122 is disposed on a conductor 121 and on a layer 161. The conductor 122 has a first region that contacts the top surface of the conductor 121 and a second region that contacts the top surface of the layer 161. The height of the top surface of the conductor 121 that contacts the first region and the height of the top surface of the layer 161 that contacts the second region are preferably the same or substantially the same.

[0396] The pixel electrode described in this embodiment contains, for example, a material that reflects visible light, and the opposite electrode contains a material that transmits visible light.

[0397] The display device 100 has a top-emitting structure. The light emitted by the light-emitting device is emitted to the substrate 102 side. The substrate 102 is preferably made of a material with high transmittance to visible light.

[0398] A light-emitting device 150a is disposed above the conductor 121a, and a light-emitting device 150b is disposed above the conductor 121b.

[0399] Hereinafter, light-emitting device 150a and light-emitting device 150b will be described.

[0400] The light-emitting device described in this embodiment refers to a self-emissive light-emitting device such as an organic EL element (also known as an OLED (Organic Light Emitting Diode)). Additionally, the light-emitting device electrically connected to the pixel circuit can be a self-emissive light-emitting device such as an LED (Light Emitting Diode), Micro LED, QLED (Quantum-dot Light Emitting Diode), or semiconductor laser.

[0401] Conductors 122a and 122b can be formed, for example, by depositing conductive films on conductors 121a, 121b, layer 161a and layer 161b, and the conductive film is formed by photolithography or electron beam photolithography.

[0402] Conductors 122a and 122b are used, for example, as anodes of light-emitting devices 150a and 150b included in the display device 100.

[0403] Conductors 122a and 122b may, for example, be indium tin oxide (sometimes referred to as ITO).

[0404] Furthermore, conductors 122a and 122b can have a stacked structure of two or more layers instead of a single-layer structure. For example, a conductor with high reflectivity to visible light can be used as the first layer, and a conductor with high light transmittance can be used as the top layer. Examples of conductors with high reflectivity to visible light include silver, aluminum, or an alloy film of silver (Ag), palladium (Pd), and copper (Cu) (Ag-Pd-Cu (APC) film). Examples of conductors with high light transmittance include the aforementioned indium tin oxide. In addition, conductors 122a and 122b can be, for example, a stacked film of aluminum sandwiched by a pair of titanium (a film in which Ti, Al, Ti are stacked sequentially), or a stacked film of silver sandwiched by a pair of indium tin oxides (a film in which ITO, Ag, ITO are stacked sequentially), etc.

[0405] An EL layer 141a is provided on the conductor 122a. In addition, an EL layer 141b is provided on the conductor 122b.

[0406] Furthermore, both EL layers 141a and EL layers 141b are preferably light-emitting layers that emit light of different colors. For example, EL layer 141a may include a light-emitting layer that emits light of any one of red (R), green (G), and blue (B), and EL layer 141b may include a light-emitting layer that emits light of one of the remaining two colors. Additionally, although not shown in FIG24, if an EL layer different from EL layers 141a and EL layers 141b is provided, this EL layer may include a light-emitting layer that emits light of the remaining color. Thus, the display device 100 may also have a structure (SBS structure) in which different light-emitting layers are formed on multiple pixel electrodes (conductors 121a and 121b in FIG24) for each color.

[0407] Note that the combination of colors emitted by the light-emitting layers in each of the EL layers 141a and EL layers 141b is not limited to the combinations described above; for example, cyan, magenta, yellow, and other colors may also be used. Furthermore, the example shown above is that the number of colors emitted by the light-emitting device 150 included in the display device 100 is three, but it may also be two, three, or more than four.

[0408] In addition to the layer containing the luminescent organic compound (luminescent layer), EL layer 141a and EL layer 141b may each include one or more of the following: an electron injection layer, an electron transport layer, a hole injection layer, and a hole transport layer.

[0409] In addition, the EL layer 141a and EL layer 141b can be formed by methods such as vapor deposition (vacuum vapor deposition, etc.), coating (e.g., dip coating, dye coating, rod coating, spin coating, spray coating), and printing (e.g., inkjet printing, screen printing, offset printing, flexographic printing, gravure printing, micro-contact printing).

[0410] Furthermore, when using the above-described coating method and printing method as film-forming methods, the material to be deposited can be, for example, a polymeric compound (e.g., oligomer, dendritic polymer, polymer), a medium-molecular-weight compound (a compound in the intermediate region between low and high molecular weight, with a molecular weight of 400 to 4000), or an inorganic compound (e.g., quantum dot material). Additionally, as the quantum dot material, colloidal quantum dot materials, alloy-type quantum dot materials, core-shell quantum dot materials, or core-type quantum dot materials can be used.

[0411] For example, like the light-emitting device 150 shown in FIG25A, the light-emitting devices 150a and 150b shown in FIG24 can be composed of multiple layers such as light-emitting layer 4411 and layer 4430.

[0412] Layer 4420 may include, for example, a layer containing a substance with high electron injection capacity (electron injection layer) and a layer containing a substance with high electron transport capacity (electron transport layer). The luminescent layer 4411 may, for example, contain a luminescent compound. Layer 4430 may, for example, include a layer containing a substance with high hole injection capacity (hole injection layer) and a layer containing a substance with high hole transport capacity (hole transport layer).

[0413] The structure including layer 4420, light-emitting layer 4411 and layer 4430 disposed between a pair of electrodes (conductor 121 and conductor 122 described later) can be used as a single light-emitting unit. In this specification, the structure of FIG25A is referred to as a single structure.

[0414] Additionally, FIG25B shows a modified example of the EL layer 141 in the light-emitting device 150 shown in FIG25A. Specifically, the light-emitting device 150 shown in FIG25B includes layer 4430-1 on conductor 121, layer 4430-2 on layer 4430-1, light-emitting layer 4411 on layer 4430-2, layer 4420-1 on light-emitting layer 4411, layer 4420-2 on layer 4420-1, and conductor 122 on layer 4420-2. For example, when conductor 121 and conductor 122 are used as anode and cathode, respectively, layer 4430-1 is used as a hole injection layer, layer 4430-2 is used as a hole transport layer, layer 4420-1 is used as an electron transport layer, and layer 4420-2 is used as an electron injection layer. Alternatively, when conductors 121 and 122 are used as the cathode and anode, respectively, layer 4430-1 is used as the electron injection layer, layer 4430-2 as the electron transport layer, layer 4420-1 as the hole transport layer, and layer 4420-2 as the hole injection layer. By employing the above layer structure, carriers can be efficiently injected into the light-emitting layer 4411, thereby improving the recombination efficiency of carriers within the light-emitting layer 4411.

[0415] In addition, as shown in FIG25C, the structure in which multiple light-emitting layers (light-emitting layer 4411, light-emitting layer 4412 and light-emitting layer 4413) are disposed between layer 4420 and layer 4430 is also a variant example of a single structure.

[0416] Furthermore, the stack of multiple layers including layer 4420, light-emitting layer 4411, and layer 4430 is sometimes referred to as a light-emitting unit. Multiple light-emitting units can be connected in series via an intermediate layer (charge-generating layer). Specifically, as shown in FIG25D, light-emitting units 4400a and 4400b of multiple light-emitting units are connected in series via an intermediate layer (charge-generating layer) 4440. In this specification, this structure is referred to as a series structure. Additionally, in this specification, for example, the series structure is sometimes referred to as a stacked structure. Furthermore, by employing a series structure in the light-emitting device, a light-emitting device capable of emitting light with high brightness can be realized. Furthermore, by employing a series structure in the light-emitting device, improvements in luminous efficiency and lifespan of the light-emitting device can be expected. When the light-emitting device 150 of the display device 100 in FIG24 adopts a series structure, the EL layer 141 may include, for example, layer 4420 of light-emitting unit 4400a, light-emitting layer 4411 and layer 4430, intermediate layer 4440, layer 4420 of light-emitting unit 4400b, light-emitting layer 4412 and layer 4430.

[0417] Furthermore, when displaying white, the power consumption of the SBS structure described above can be lower than that of the single structure and series structure described above. Therefore, the SBS structure is preferable when power consumption is desired. On the other hand, the manufacturing process of the single structure and series structure is simpler than that of the SBS structure light-emitting device, thereby reducing manufacturing costs or improving manufacturing yield, and is therefore preferable.

[0418] The light-emitting color of the light-emitting device 150 can be red, green, blue, cyan, magenta, yellow, or white, depending on the material constituting the EL layer 141. In addition, when the light-emitting device 150 has a microcavity structure, the color purity can be further improved.

[0419] A light-emitting device that emits white light preferably has a structure in which the light-emitting layer contains two or more light-emitting materials. To obtain white light emission, for example, two or more light-emitting materials in which each emission color is complementary to the other light-emitting materials can be selected. Alternatively, to obtain white light emission, for example, a light-emitting material selected from one of three or more light-emitting materials whose emission color is complementary to the emission colors of the remaining light-emitting materials can be selected.

[0420] Preferably, the light-emitting layer comprises two or more light-emitting materials that emit light of colors such as R (red), G (green), B (blue), Y (yellow), and O (orange). Alternatively, more preferably, it comprises two or more light-emitting materials, and the light emitted by each light-emitting material comprises spectral components of two or more colors of R, G, and B.

[0421] Furthermore, as shown in FIG24, a gap is provided between the two EL layers between adjacent light-emitting devices. Specifically, in FIG24, a recess is formed between adjacent light-emitting devices, and the sides (sides of conductors 121a, 122a and EL layer 141a, and sides of conductors 121b, 122b and EL layer 141b) and the bottom surface (a portion of the insulator 111) of the recess are covered by insulator 112. In addition, an insulator 162 is formed on the insulator 112 in such a way that it is embedded in the recess. Thus, EL layers 141a and EL layers 141b are preferably provided in a manner that they do not contact each other. As a result, unintentional light emission (also known as crosstalk) caused by the current (also referred to as lateral leakage current or side leakage current) flowing through the two adjacent EL layers can be appropriately suppressed. As a result, the contrast can be improved and a display device with high display quality can be realized. In addition, for example, by employing a structure with extremely low lateral leakage current between light-emitting devices, black display in a display device can be achieved with minimal light leakage (also known as full black display).

[0422] As a method for forming EL layers 141a and EL layers 141b, a photolithography method can be used. For example, by first depositing EL films to form EL layers 141a and EL layers 141b on the conductor 122, and then patterning the EL films using photolithography, EL layers 141a and EL layers 141b can be formed. Thus, a gap can be provided between the two EL layers between adjacent light-emitting devices.

[0423] The insulator 112 can be an insulating layer comprising inorganic materials. Inorganic insulating films such as oxide insulating films, nitride insulating films, oxynitride insulating films, or oxynitride insulating films can be used as the insulator 112. The insulator 112 can have a single-layer structure or a multilayer structure. Examples of oxide insulating films include silicon oxide films, aluminum oxide films, magnesium oxide films, indium gallium zinc oxide films, gallium oxide films, germanium oxide films, yttrium oxide films, zirconium oxide films, lanthanum oxide films, neodymium oxide films, hafnium oxide films, and tantalum oxide films. Examples of nitride insulating films include silicon nitride films and aluminum nitride films. Examples of oxynitride insulating films include silicon oxynitride films and aluminum oxynitride films. Examples of oxynitride insulating films include silicon oxynitride films and aluminum oxynitride films. In particular, the alumina film has a high selectivity to the EL layer during the etching process and functions to protect the EL layer during the formation of the insulator 162 described later, making it preferable. Specifically, by using inorganic insulating films such as alumina, hafnium oxide, and silicon oxide films formed using the ALD method for the insulator 112, an insulator 112 with fewer pinholes and good protection of the EL layer can be formed.

[0424] In this specification, oxynitrides refer to materials in which the oxygen content is greater than the nitrogen content in their composition, while nitrogen oxides refer to materials in which the nitrogen content is greater than the oxygen content in their composition. For example, when referred to as "silicon oxynitrides", it refers to materials in which the oxygen content is greater than the nitrogen content in their composition, while when referred to as "silicon oxynitrides", it refers to materials in which the nitrogen content is greater than the oxygen content in their composition.

[0425] The insulator 112 can be formed using sputtering, CVD, PLD or ALD methods. The insulator 112 is preferably formed using the ALD method with high coverage.

[0426] The insulator 162 disposed on the insulator 112 has the function of flattening the recess of the insulator 112 formed between adjacent light-emitting devices. In other words, by including the insulator 162, the flatness of the formation surface of the conductor 123 described later can be improved. An insulating layer comprising an organic material is suitably used as the insulator 162. For example, acrylic resin, polyimide resin, epoxy resin, amide resin, polyamide resin, polyamide amide resin, silicone resin, silicone resin, benzocyclobutene resin, phenolic resin, and precursors of the above resins can be used as the insulator 162. In addition, organic materials such as polyvinyl alcohol (PVA), polyvinyl butyral, polyvinylpyrrolidone, polyethylene glycol, polyglycerol, pullulan, water-soluble cellulose, or alcohol-soluble polyamide resin can be used as the insulator 162. In addition, a photosensitive resin can be used as the insulator 162, for example. As a photosensitive resin, a photoresist can also be used, for example. The photosensitive resin can be, for example, a positive or negative material.

[0427] The difference between the height of the top surface of the insulator 162 and the height of the top surface of the EL layer 141a or EL layer 141b is preferably 0.5 times or less, and more preferably 0.3 times or less, the thickness of the insulator 162. Alternatively, the insulator 162 may be provided such that the top surface of the EL layer 141a or EL layer 141b is higher than the top surface of the insulator 162. Alternatively, the insulator 162 may be provided such that the top surface of the insulator 162 is higher than the top surface of the light-emitting layer in the EL layer 141a or EL layer 141b.

[0428] Conductors 123 are provided on EL layer 141a, EL layer 141b, insulator 112 and insulator 162. In addition, insulators 113 are provided on light-emitting device 150a and light-emitting device 150b.

[0429] Conductor 123 is used, for example, as a common electrode for light-emitting devices 150a and 150b. In addition, in order to emit light from light-emitting device 150 toward the top of display device 100, conductor 122 is preferably made of a conductive material that is transparent.

[0430] The conductor 123 is preferably a material with high conductivity and light transmittance and light reflectance (sometimes referred to as a semi-transparent and semi-reflective electrode). As the conductor 122, for example, an alloy of silver and magnesium, or indium tin oxide can be used.

[0431] The insulator 113 is sometimes referred to as a protective layer. By providing the insulator 113 above each of the light-emitting devices 150a and 150b, the reliability of the light-emitting devices can be improved. In other words, the insulator 113 serves as a passivation film protecting the light-emitting devices 150a and 150b. Therefore, the insulator 113 is preferably made of a material that prevents the ingress of water, etc. For example, the insulator 113 can be made of a material that can be used for the insulator 111. Specifically, the insulator 113 can be made of, for example, alumina, silicon nitride, or silicon oxynitride.

[0432] A resin layer 163 is provided on the insulator 113. In addition, a substrate 102 is provided on the resin layer 163.

[0433] The substrate 102 is preferably a light-transmitting substrate. By using a light-transmitting substrate as the substrate 102, the light emitted by the light-emitting device 150a and the light-emitting device 150b can be emitted upwards onto the substrate 102.

[0434] Note that the display device of one embodiment of the present invention is not limited to the structure of the display device 100 shown in FIG24. The structure of the display device of one embodiment of the present invention can be appropriately modified as long as the objective is achieved.

[0435] For example, the transistor 200 in the pixel layer PXAL of the display device 100 of FIG24 may also be a transistor comprising a metal oxide in the channel forming region (hereinafter referred to as an OS transistor). The display device 100 shown in FIG26 has a structure in which a transistor 500 (OS transistor) and a light-emitting device 150 replacing the transistor 200 are disposed above the circuit layer SICL and wiring layer LINL of the display device 100 of FIG24.

[0436] In Figure 26, the transistor 500 is disposed on the insulator 512. The insulator 512 is disposed above the insulator 364 and the conductor 366, and preferably, the insulator 512 is a material that blocks oxygen and hydrogen. Specifically, for example, silicon oxide, silicon oxynitride, silicon oxynitride, silicon nitride, aluminum oxide, aluminum oxynitride, aluminum oxynitride, or aluminum nitride can be used as the insulator 512.

[0437] For example, silicon nitride formed by CVD can be used as an example of a hydrogen-blocking film. Here, hydrogen sometimes diffuses into semiconductor devices such as transistor 500, which have oxide semiconductors, causing a deterioration in the characteristics of the semiconductor device. Therefore, it is preferable to provide a film that inhibits hydrogen diffusion between transistor 500 and transistor 300. Specifically, a film that inhibits hydrogen diffusion refers to a film with a low amount of hydrogen detachment.

[0438] Additionally, for example, the same material as insulator 320 can be used as insulator 512. Furthermore, by using a material with a lower dielectric constant for the aforementioned insulator, parasitic capacitance generated between wirings can be reduced. For example, silicon oxide film or silicon oxynitride film can be used for insulator 512.

[0439] In addition, an insulator 514 is provided on the insulator 512, and a transistor 500 is provided on the insulator 514. Furthermore, an insulator 576 is formed on the insulator 512 such that the transistor 500 is covered. In addition, an insulator 581 is provided on top of the insulator 576 to cover the insulator 576.

[0440] The insulator 514 is preferably a barrier film that prevents impurities such as water and hydrogen from diffusing from the substrate 310 or the area of ​​circuit elements below the insulator 512 to the area where the transistor 500 is disposed. Therefore, the insulator 514 is preferably silicon nitride formed by CVD.

[0441] The transistor 500 includes a first gate and a second gate. Additionally, the transistor 500 includes a metal oxide in the channel forming region. The metal oxide is located between the first gate and the second gate.

[0442] Additionally, the transistor 500 includes a first gate insulating film on the first gate. The first gate insulating film may include a single film or a stacked structure having multiple films stacked on top of each other. Furthermore, a metal oxide is located on the first gate insulating film.

[0443] As described above, the transistor 500 shown in FIG26 is an OS transistor comprising a metal oxide in the channel forming region. As this metal oxide, for example, an In-M-Zn oxide comprising indium, element M, and zinc can be used (element M is selected from one or more of aluminum, gallium, yttrium, tin, copper, vanadium, beryllium, boron, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, and magnesium). Specifically, for example, an oxide comprising indium, gallium, and zinc (sometimes denoted as IGZO) can be used as the metal oxide. Additionally, for example, an oxide comprising indium, aluminum, and zinc (sometimes denoted as IAZO) can also be used as the metal oxide. Additionally, for example, an oxide comprising indium, aluminum, gallium, and zinc (sometimes denoted as IAGZO) can also be used as the metal oxide. Furthermore, in addition to the above, In-Ga oxide, In-Zn oxide, and indium oxide can also be used as the metal oxide.

[0444] In particular, the metal oxide used as the semiconductor is preferably a metal oxide with a band gap of 2 eV or more, more preferably 2.5 eV or more. In this way, by using a metal oxide with a wider band gap, the off-state current (sometimes referred to as leakage current) of the transistor can be reduced.

[0445] In particular, the driving transistor in the pixel circuit is preferably a transistor that sufficiently reduces the off-state current even when the source-drain voltage is high, for example, an OS transistor is preferably used. By using an OS transistor as the driving transistor, the amount of off-state current flowing through the light-emitting device when the driving transistor is in the off state can be reduced, thus sufficiently reducing the brightness of the light emitted by the light-emitting device through which the off-state current flows. Therefore, when comparing driving transistors with large off-state currents and driving transistors with small off-state currents, when the pixel circuit displays black, the pixel circuit including a driving transistor with a small off-state current has a lower luminous brightness compared to a pixel circuit including a driving transistor with a large off-state current. In other words, by using an OS transistor, black blurring when the pixel circuit displays black can be suppressed.

[0446] Furthermore, the off-state current of an OS transistor with a channel width of 1 μm at room temperature can be less than 1aA (1×10⁻¹⁸ A), less than 1zA (1×10⁻²¹ A), or less than 1yA (1×10⁻²⁴ A). Note that the off-state current of a Si transistor with a channel width of 1 μm at room temperature is greater than or equal to 1fA (1×10⁻¹⁵ A) and less than 1pA (1×10⁻¹² A). Therefore, it can also be said that the off-state current of an OS transistor is about 10 bits lower than that of a Si transistor.

[0447] Furthermore, to increase the luminous brightness of the light-emitting device included in the pixel circuit, it is necessary to increase the current flowing through the light-emitting device. For this purpose, it is necessary to increase the source-drain voltage of the driving transistor included in the pixel circuit. Because the source-drain breakdown voltage of an OS transistor is higher than that of a Si transistor, a high voltage can be applied between the source and drain of the OS transistor. Therefore, by using an OS transistor as the driving transistor included in the pixel circuit, a high voltage can be applied between the source and drain of the OS transistor, thereby increasing the current flowing through the light-emitting device and improving its luminous brightness.

[0448] Furthermore, when the transistor operates in the saturation region, compared to a Si transistor, an OS transistor can reduce the change in source-drain current in response to changes in the gate-source voltage. Therefore, by using an OS transistor as the driving transistor included in the pixel circuit, the current flowing through the source-drain can be precisely determined based on the change in the gate-source voltage, thus allowing for precise control of the current flowing through the light-emitting device. Consequently, the brightness of the light emitted by the light-emitting device can be precisely controlled (increasing the grayscale in the pixel circuit).

[0449] Furthermore, regarding the saturation characteristics of the current flowing through a transistor when it operates in the saturation region, compared to Si transistors, OS transistors can maintain a stable constant current (saturation current) even when the source-drain voltage is gradually increased. Therefore, by using OS transistors as driving transistors, even if the current-voltage characteristics of a light-emitting device, such as one containing EL materials, become non-uniform, a stable constant current can still flow through the light-emitting device. In other words, when an OS transistor operates in the saturation region, the source-drain current remains almost unchanged even when the source-drain voltage is increased, thus stabilizing the luminous brightness of the light-emitting device.

[0450] As described above, by using an OS transistor as the driving transistor included in the pixel circuit, it is possible to achieve "suppression of black blur," "increase in luminous brightness," "multi-grayscale," and "suppression of light-emitting device non-uniformity." Therefore, a display device including a pixel circuit can display clear and smooth images, and as a result, one or more of image sharpness and high contrast can be observed. Image sharpness sometimes refers to one or both of motion blur suppression and black blur suppression. In addition, by employing a structure with extremely low off-state current flowing through the driving transistor included in the pixel circuit, black display performed in the display device can be characterized by minimal light leakage (also known as full black display).

[0451] In addition, the transistor 500 includes a pair of conductors on a metal oxide. One of the conductors is used as one of the source and drain electrodes of the transistor 500, and the other of the conductors is used as the other of the source and drain electrodes of the transistor 500.

[0452] In addition, a pair of conductors, a metal oxide, and a first gate insulating film are covered by an insulator 573. The insulator 573 serves as a barrier film to prevent the diffusion of impurities such as water and hydrogen into the metal oxide. Furthermore, an insulator 574, which serves as an interlayer film, is provided on the insulator 573.

[0453] Furthermore, an opening reaching the first gate insulating film is provided in the region of the insulator 574 overlapping with the first gate. By forming this opening, a pair of conductors are formed in a self-aligned manner. A second gate insulating film is formed on the bottom and side surfaces of the opening. A second gate is formed on the second gate insulator by embedding it into the opening. An insulator 575 is formed in contact with the insulator 574, the second gate insulator, and the second gate. An insulator 576 is formed such that it surrounds the insulator 575 and the transistor 500 by insulators 514 and 576. An insulator 581 is formed on the insulator 576.

[0454] Insulator 574 may be, for example, silicon oxide, silicon oxynitride, silicon oxide with added fluorine, silicon oxide with added carbon, silicon oxide with added carbon and nitrogen, or silicon oxide with holes.

[0455] One or more selected from insulators 573, 575, 576, and 581 are preferably used as a barrier insulating film to inhibit the diffusion of impurities such as water and hydrogen from the top of the transistor 500 to the transistor 500. Therefore, one or more selected from insulators 573, 575, 576, and 581 are preferably insulating materials that have the function of inhibiting the diffusion of impurities such as hydrogen atoms, hydrogen molecules, water molecules, nitrogen atoms, nitrogen molecules, nitrogen oxide molecules (N2O, NO, NO2, etc.) or copper atoms (making it difficult for the aforementioned impurities to permeate). Alternatively, it is preferable to use insulating materials that have the function of inhibiting the diffusion of oxygen (e.g., one or both of oxygen atoms and oxygen molecules) (making it difficult for the aforementioned oxygen to permeate).

[0456] Preferably, one or more of insulators 573, 575, 576, and 581 are used, which have the function of inhibiting the diffusion of impurities such as water and hydrogen, as well as oxygen. For example, one or more of insulators 573, 575, 576, and 581 are preferably aluminum oxide, magnesium oxide, hafnium oxide, gallium oxide, indium gallium zinc oxide, silicon nitride, or silicon oxynitride.

[0457] In addition, one of the source and drain electrodes of insulators 581, 576, 575, 574, 573, and transistor 500 is provided with an opening for forming a plug or wiring. Furthermore, a conductor 540 is formed in this opening for use as a plug or wiring.

[0458] In addition, the insulator 581 is preferably an insulator used as an interlayer film and a planarization film.

[0459] Insulator 224 and insulator 226 are sequentially formed above insulator 581 and conductor 540. Note that the description of the insulator, conductor and circuit elements located above insulator 224, including insulator 224, can be found in the description of display device 100 with reference to FIG24.

[0460] Note that FIG24 shows a display device constructed by bonding a semiconductor substrate on which a light-emitting device 150, pixel circuits, etc., are formed together with a semiconductor substrate on which a driving circuit, etc., is formed. FIG26 shows a display device on which a light-emitting device 150, pixel circuits, etc., are formed on the driving circuit in a semiconductor substrate on which the driving circuit is formed. However, the display device of the electronic device according to one embodiment of the present invention is not limited to FIG24 or FIG26. The display device of the electronic device according to one embodiment of the present invention may, for example, have a structure in which only one layer of transistor is formed, and not have a layer structure in which two layers of transistor are stacked.

[0461] Specifically, for example, a display device of an electronic device according to an embodiment of the present invention, as shown in the display device 100 of FIG. 27A, may also include: a circuit including a transistor 200 on a substrate 210; and a light-emitting device 150 above the transistor 200. Alternatively, for example, as shown in FIG. 27B, the display device 100 may also employ a structure in which an insulator 512 is formed on a substrate 501 and a transistor 500 and a light-emitting device 150 above the transistor 500 are disposed on the insulator 512. Furthermore, the substrate 501 may be, for example, a substrate that can be used for the substrate 310, and a glass substrate is particularly preferred.

[0462] As shown in each of Figures 27A and 27B, the display device of the electronic device according to one embodiment of the present invention may also have a structure in which only one layer of transistor is formed and a light-emitting device 150 is disposed on top of the transistor. Furthermore, although not shown, the display device of the electronic device according to one embodiment of the present invention may also have a layer structure in which three or more layers of transistor are stacked.

[0463] <Example of Sealing Structure for Display Device> Next, the sealing structure of the light-emitting device 150 that can be used in the display device 100 of FIG24 will be described.

[0464] FIG28A is a cross-sectional view showing an example of a sealing structure that can be used in the display device 100 of FIG24. Specifically, FIG28A shows the material disposed at the end of the display device 100 and around the end of FIG24. In addition, FIG28A only shows a portion of the pixel layer PXAL of the display device 100. Specifically, FIG28A shows the insulator 250, the insulator located above the insulator 250, the conductor, and the light-emitting device 150a.

[0465] Additionally, region 123CM shown in FIG. 28A is provided with an opening, for example. Conductor 123 is electrically connected to wiring disposed below insulator 250 through this opening. Thus, a potential (e.g., anode and cathode potentials in light-emitting device 150a, etc.) can be supplied to conductor 123, which is used as a common electrode. One or both of the conductor included in region 123CM and the conductors surrounding region 123CM are sometimes referred to as connecting electrodes.

[0466] In the display device 100 of FIG28A, an adhesive layer 164 is provided at or around the end of the resin layer 163. Specifically, the display device 100 is configured such that the insulator 113 and the substrate 102 are bonded together with the adhesive layer 164 in between.

[0467] As the adhesive layer 164, it is preferable to use a material that inhibits the transmission of impurities such as atmospheric components and moisture. By using this material as the adhesive layer 164, the reliability of the display device 100 can be improved.

[0468] Sometimes the structure in which the insulator 113 and the substrate 102 are bonded together using an adhesive layer 164 through a resin layer 163 is called a solid sealing structure. In addition, in a solid sealing structure, when the resin layer 163 and the adhesive layer 164 have the same function of bonding the insulator 113 and the substrate 102, the adhesive layer 164 is not necessarily provided.

[0469] On the other hand, the structure in which the insulator 113 and the substrate 102 are bonded using an adhesive layer 164 filled with an inert gas instead of the resin layer 163 is sometimes referred to as a hollow sealed structure (not shown). Examples of inert gases include nitrogen and argon.

[0470] Furthermore, in the sealing structure of the display device 100 shown in FIG. 28A, two or more adhesive layers may be overlapped. For example, as shown in FIG. 28B, an adhesive layer 165 may also be provided on the inner side of the adhesive layer 164 (between the adhesive layer 164 and the resin layer 163). By overlapping two or more adhesive layers, the permeation of impurities such as moisture can be further suppressed, thereby further improving the reliability of the display device 100.

[0471] Alternatively, a desiccant may be mixed into the adhesive layer 165. As a result, the moisture in the resin layer 163, insulator, conductor and EL layer formed on the inner side of the adhesive layer 164 and the adhesive layer 165 is adsorbed by the desiccant, so the reliability of the display device 100 can be improved.

[0472] In addition, the display device 100 of FIG28B has a solid sealing structure, but it may also have a hollow sealing structure.

[0473] Alternatively, in the sealing structure of the display device 100 in Figures 28A and 28B, an inert liquid may be used instead of the resin layer 163. Examples of inert liquids include fluorine-based inert liquids.

[0474] <Modified Examples of Display Devices> One embodiment of the present invention is not limited to the above-described structure, and the above structure may be appropriately modified as needed. Hereinafter, modified examples of the display device 100 of FIG24 will be described using FIGS. 29A to 30B. In addition, FIGS. 29A to 30B only show a portion of the pixel layer PXAL of the display device 100. Specifically, FIGS. 29A to 30B each show an insulator 111 and an insulator, a conductor, a light-emitting device 150a, and a light-emitting device 150b located above the insulator 111. In particular, FIGS. 29A to 30B also show a light-emitting device 150c, a conductor 121c, a layer 161c, a conductor 122c, and an EL layer 141c.

[0475] Note that, for example, the color of the light emitted by EL layer 141c may be different from the color of the light emitted by EL layers 141a and EL layers 141b. Furthermore, for example, the display device 100 may be structured such that the light emitted by light-emitting devices 150a to 150c has two colors. Additionally, for example, the display device 100 may be structured such that the number of light-emitting devices 150 is increased, resulting in a total of four colors emitted by the multiple light-emitting devices (not shown).

[0476] Additionally, as shown in FIG29A, for example, the structure of the display device 100 may also employ a structure in which an EL layer 142 is formed on EL layers 141a to EL layers 141c. Specifically, for example, in FIG25A, when EL layers 141a to EL layers 141c include layer 4430 and light-emitting layer 4411, a structure in which EL layer 142 includes layer 4420 can be used. In this case, layer 4420 in EL layer 142 is used as a common layer for light-emitting devices 150a to 150c. Similarly, for example, in FIG25C, by employing a structure in which EL layer 142 includes layer 4420 when EL layers 141a to EL layers 141c include layer 4430, light-emitting layer 4411, light-emitting layer 4412, and light-emitting layer 4413, layer 4420 in EL layer 142 is used as a common layer for light-emitting devices 150a to 150c. Additionally, for example, in FIG25D, by adopting a structure in which EL layer 142 includes layer 4420 of light-emitting unit 4400b when EL layers 141a to EL layers 141c include layer 4430 of light-emitting unit 4400b, light-emitting layer 4412 and layer 4420, intermediate layer 4440, layer 4430 of light-emitting unit 4400a and light-emitting layer 4411, layer 4420 of light-emitting unit 4400a in EL layer 142 is used as a common layer for light-emitting devices 150a to 150c.

[0477] Furthermore, for example, in the display device 100, the insulator 113 may have a multilayer structure with two or more layers instead of a single-layer structure. For example, the insulator 113 may also have a three-layer multilayer structure, wherein the first layer is an insulator made of inorganic material, the second layer is an insulator made of organic material, and the third layer is an insulator made of inorganic material. FIG29B is a cross-sectional view showing a portion of the display device 100 having a multilayer structure including insulator 113a, insulator 113b, and insulator 113c, wherein insulator 113a is an insulator made of inorganic material, insulator 113b is an insulator made of organic material, and insulator 113c is an insulator made of inorganic material.

[0478] Additionally, for example, in the display device 100, EL layers 141a to EL layers 141c may all have a microcavity structure (micro resonator structure). The microcavity structure refers to, for example, a structure in which the conductor 122, which serves as the upper electrode (common electrode), uses a conductive material that is both transparent and reflective, and the conductor 121, which serves as the lower electrode (pixel electrode), uses a conductive material that is reflective. The distance between the bottom surface of the light-emitting layer and the top surface of the lower electrode, that is, the film thickness of layer 4430 in FIG. 25A, is set to the thickness corresponding to the wavelength of the color of the light emitted by the light-emitting layer in EL layer 141.

[0479] For example, the light reflected back from the lower electrode (reflected light) will cause significant interference to the light directly incident from the light-emitting layer to the upper electrode (incident light). Therefore, it is preferable to adjust the optical distance between the lower electrode and the light-emitting layer to (2n-1)λ / 4 (note that n is a natural number greater than 1, and λ is the wavelength of the light to be amplified). By adjusting this optical path, the reflected light of wavelength λ can be made to be in phase with the incident light, thereby further amplifying the light emitted from the light-emitting layer. On the other hand, when the wavelengths of the reflected light and the incident light are other than λ, they are out of phase, so the reflected light and the incident light are not resonant and attenuate.

[0480] In addition, in the above structure, the EL layer may have a structure including multiple light-emitting layers or a structure including a single light-emitting layer. Furthermore, for example, the above-described tandem light-emitting device structure and microcavity structure may be combined.

[0481] By employing a microcavity structure, the luminous intensity in the front direction at a specified wavelength can be enhanced, thereby achieving low power consumption. In particular, in XR devices such as VR and AR, light from the front direction of the light-emitting device is often incident on the eyes of the user wearing the device, so it can be said that a microcavity structure is preferable for display devices used in XR devices. Note that in the case of a display device that uses sub-pixels of four colors—red, yellow, green, and blue—to display images, the increased brightness due to yellow light emission can be obtained, and microcavity structures suitable for the wavelengths of each color can be used in all sub-pixels, thus enabling a light-emitting device with excellent characteristics.

[0482] FIG30A is, for example, a cross-sectional view showing a portion of a display device 100 employing a microcavity structure. Furthermore, when light-emitting device 150a includes a light-emitting layer emitting blue (B) light, light-emitting device 150b includes a light-emitting layer emitting green (G) light, and light-emitting device 150c includes a light-emitting layer emitting red (R) light, as shown in FIG30A, it is preferable to increase the film thickness in the order of EL layer 141a, EL layer 141b, and EL layer 141c. Specifically, the film thickness of layer 4430 included in each of EL layer 141a, EL layer 141b, and EL layer 141c is determined according to the color of the light emitted by each light-emitting layer. In this case, layer 4430 included in EL layer 141a is the thinnest and layer 4430 included in EL layer 141c is the thickest.

[0483] Additionally, for example, the display device 100 may also include a color layer (color filter), etc. FIG30B shows, for example, a structure in which a color layer 166a, a color layer 166b, and a color layer 166c are provided between the resin layer 163 and the substrate 102. Color layers 166a to 166c may be formed on the substrate 102, for example. In addition, if the light-emitting device 150a includes a light-emitting layer that emits blue (B) light, the light-emitting device 150b includes a light-emitting layer that emits green (G) light, and the light-emitting device 150c includes a light-emitting layer that emits red (R) light, then color layer 166a is blue, color layer 166b is green, and color layer 166c is red.

[0484] The display device 100 shown in FIG30B is constructed by bonding a substrate 102, on which color layers 166a to 166c are disposed, to a substrate 310 on which light-emitting devices 150a to 150c are formed, through a resin layer 163. Preferably, the bonding is performed such that light-emitting devices 150a overlap with color layer 166a, light-emitting devices 150b overlap with color layer 166b, and light-emitting devices 150c overlap with color layer 166c. By providing color layers 166a to 166c in the display device 100, light emitted by light-emitting device 150b can pass through color layer 166b and be emitted upwards from the substrate 102 without passing through color layers 166a or 166c. In other words, light from the tilt direction (the direction of elevation when the top surface of the substrate 102 is the horizontal plane) of the light-emitting device 150 of the display device 100 can be blocked, so the viewing angle dependence of the display device 100 can be reduced, thereby preventing the degradation of the display quality of the image when viewed from the tilt direction.

[0485] Furthermore, the color layers 166a to 166c formed on the substrate 102 may also be covered by a resin referred to as a cover layer. Specifically, in the display device 100, the resin layer 163, the cover layer, the color layers 166a to 166c, and the substrate 102 may be stacked in that order (not shown). In addition, as a resin for the cover layer, examples include thermosetting materials that are transparent and based on acrylic resin or epoxy resin.

[0486] In addition, for example, the display device 100 may include a black matrix (not shown) in addition to the color layer. By providing a black matrix between color layers 166a and 166b, between color layers 166b and 166c, and between color layers 166c and 166a, light from the light-emitting device 150 of the display device 100 in the tilt direction (the direction of elevation when the top surface of the substrate 102 is the horizontal plane) can be further blocked, so the display quality of the image displayed on the display device 100 when viewed from the tilt direction can be further prevented from degrading.

[0487] In addition, when the display device includes a color layer as shown in FIG30B, the light-emitting devices 150a to 150c included in the display device may all be light-emitting devices that emit white light (not shown). In addition, the light-emitting device may, for example, adopt a single structure or a series structure.

[0488] Furthermore, in the above-described display device 100, conductors 121a to 121c are anodes and conductor 122 is a cathode. However, the display device 100 may also adopt a structure in which conductors 121a to 121c are cathodes and conductor 122 is anode. In other words, in the manufacturing process described above, the stacking order of the hole injection layer, hole transport layer, light-emitting layer, electron transport layer, and electron injection layer included in EL layers 141a to EL layers 141c and EL layer 142 may be reversed.

[0489] <Structural Example of Layer 161> Here, a cross-sectional structure of the display device 100 including the conductor 121, layer 161, and the area surrounding them is shown. Furthermore, the descriptions in Figures 31A to 31D can be applied to light-emitting devices 150a and 150b.

[0490] Figures 24, 26 to 30B show examples where the top surface of layer 161 is substantially aligned with the top surface of conductor 121, but the present invention is not limited thereto. For example, as shown in Figure 31A, sometimes the top surface of layer 161 is higher than the top surface of conductor 121. In this case, the top surface of layer 161 has a convex shape that expands gently towards the center.

[0491] Additionally, as shown in FIG31B, the top surface of layer 161 is sometimes lower than the top surface of conductor 121. In this case, the top surface of layer 161 has a concave shape that gently slopes towards the center.

[0492] Additionally, as shown in FIG31C, when the top surface of layer 161 is higher than the top surface of conductor 121, the upper part of layer 161 sometimes expands due to the recess in conductor 121. At this time, a portion of layer 161 sometimes covers a portion of the generally flat area of ​​conductor 121.

[0493] Additionally, as shown in FIG31D, sometimes a recess is formed on a portion of the top surface of layer 161 in the structure shown in FIG31C. This recess has a shape that gently slopes inward toward the center.

[0494] <Structural Example of Insulator 162> Next, a cross-sectional structure of the display device 100 including the insulator 162 and the area around it is shown.

[0495] Figure 32A shows an example where the film thicknesses of EL layers 141a and EL layers 141b are different from each other. The height of the top surface of the insulator 112 is the same as or approximately the same as the height of the top surface of EL layer 141a on the EL layer 141a side, and the same as or approximately the same as the height of the top surface of EL layer 141b on the EL layer 141b side. Furthermore, the top surface of the insulator 112 has a gentle slope that is higher on the EL layer 141a side and lower on the EL layer 141b side. Thus, the heights of insulators 112 and 162 are preferably the same as the heights of the top surfaces of the adjacent EL layers. Alternatively, the top surfaces of insulators 112 and 162 may also have a flat portion that is the same as the height of the top surfaces of any one of the adjacent EL layers.

[0496] In Figure 32B, the top surface of insulator 162 has a region that is higher than the top surfaces of EL layer 141a and EL layer 141b. In addition, the top surface of insulator 112 has a convex shape that expands gently towards the center.

[0497] In FIG. 32C, the insulator 112 has a region whose top surface is higher than the top surfaces of EL layers 141a and 141b. Additionally, in the region including the insulator 162 and its surrounding area, the display device 100 includes a first region located on at least one of sacrificial layers 118 and 119. The height of the first region is higher than the top surfaces of EL layers 141a and 141b, and a portion of the insulator 162 is formed in the first region. Furthermore, in the region including the insulator 162 and its surrounding area, the display device 100 includes a second region located on at least one of sacrificial layers 118 and 119. The height of the second region is higher than the top surfaces of EL layers 141a and 141b, and a portion of the insulator 162 is formed in the second region.

[0498] In Figure 32D, the top surface of the insulator 162 has a region that is lower than the top surfaces of the EL layers 141a and 141b. In addition, the top surface of the insulator 162 has a shape that is gently concave towards the center.

[0499] In FIG32E, the top surface of the insulator 112 has a region that is higher than the top surfaces of the EL layers 141a and 141b. That is, on the surface of the EL layer 141, the insulator 112 protrudes and forms a convex portion.

[0500] When forming the insulator 112, for example, when the insulator 112 is formed in a manner consistent with or substantially consistent with the height of the sacrificial layer, as shown in FIG32E, sometimes the insulator 112 is formed in a protruding shape.

[0501] In Figure 32F, the top surface of the insulator 112 has a region that is lower than the top surfaces of the EL layers 141a and 141b. That is, the insulator 112 has a recess on the surface where the EL layer 141 is formed.

[0502] As described above, insulators 112 and 162 can take various shapes.

[0503] <Structure Examples of Pixel Circuits> Here, we will describe a structural example of a pixel circuit that may be included in the pixel layer PXAL.

[0504] Figures 33A and 33B show a structural example of a pixel circuit that may be included in the pixel layer PXAL and a light-emitting device 150 connected to the pixel circuit. Figure 33A is a diagram showing the connections of the circuit elements included in the pixel circuit 400 included in the pixel layer PXAL, and Figure 33B is a schematic diagram showing the vertical relationship between the circuit layer SICL including the driving circuit 30, the OSL layer including multiple transistors in the pixel circuit, and the EML layer including the light-emitting device 150. The pixel layer PXAL of the display device 100 shown in Figure 33B includes, for example, the OSL layer and the EML layer. The transistors 500A, 500B, and 500C included in the OSL layer shown in Figure 33B correspond to the transistor 200 in Figure 24. The light-emitting device 150 included in the EML layer shown in Figure 33B corresponds to the light-emitting device 150a or 150b in Figure 24.

[0505] For example, the pixel circuit 400 shown in Figures 33A and 33B includes transistors 500A, 500B, 500C, and a capacitor 600. Transistors 500A, 500B, and 500C can be, for example, transistors that can be used in the aforementioned transistor 200. In other words, transistors 500A, 500B, and 500C can be Si transistors. Alternatively, transistors 500A, 500B, and 500C can be, for example, transistors that can be used in the aforementioned transistor 500. In other words, transistors 500A, 500B, and 500C can be OS transistors. In particular, when transistors 500A, 500B, and 500C are OS transistors, it is preferable that transistors 500A, 500B, and 500C all include a back gate electrode. In this case, they can have a structure that supplies the same signal to the back gate electrode and the gate electrode, or a structure that supplies a different signal to the back gate electrode than to the gate electrode. Note that Figures 33A and 33B show transistors 500A, 500B, and 500C including a back gate electrode, but transistors 500A, 500B, and 500C may also not include a back gate electrode.

[0506] Transistor 500B includes a gate electrode electrically connected to transistor 500A, a first electrode electrically connected to light-emitting device 150, and a second electrode electrically connected to wiring ANO. Wiring ANO is a potential wiring used to supply current to light-emitting device 150.

[0507] Transistor 500A includes a first terminal electrically connected to the gate electrode of transistor 500B, a second terminal electrically connected to the wiring SL used as a source line, and a gate electrode having the function of controlling the on state or the off state according to the potential of the wiring GL1 used as a gate line.

[0508] The transistor 500C includes a first terminal electrically connected to wiring V0, a ​​second terminal electrically connected to the light-emitting device 150, and a gate electrode having the function of controlling the on or off state according to the potential of wiring GL2, which is used as a gate line. Wiring V0 is wiring used to supply a reference potential and wiring used to output the current flowing through the pixel circuit 400 to the drive circuit 30.

[0509] The capacitor 600 includes a conductive film electrically connected to the gate electrode of the transistor 500B and a conductive film electrically connected to the second electrode of the transistor 500C.

[0510] The light-emitting device 150 includes a first electrode electrically connected to a first electrode of the transistor 500B and a second electrode electrically connected to a wiring VCOM. The wiring VCOM is a wiring that supplies a potential for supplying current to the light-emitting device 150.

[0511] Thus, the intensity of the light emitted by the light-emitting device 150 can be controlled based on the image signal supplied to the gate electrode of the transistor 500B. In addition, the non-uniformity of the gate-source voltage of the transistor 500B can be suppressed by the reference potential of the wiring V0 supplied by the transistor 500C.

[0512] Additionally, the current used when setting pixel parameters can be output from wiring V0. More specifically, wiring V0 can be used as a monitoring line to output the current flowing through transistor 500B or the current flowing through light-emitting device 150 to the outside. The current output to wiring V0 is converted into voltage by a source follower circuit or the like and output to the outside. In addition, it is converted into a digital signal by an AD converter or the like and output to the arithmetic circuit 1350, arithmetic circuit MAC1, etc., described in the above embodiment.

[0513] Furthermore, in the structure shown as an example in FIG33B, the wiring used to electrically connect the pixel circuit 400 and the driving circuit 30 can be shortened, thus reducing the wiring resistance. Therefore, data writing can be performed at high speed, and the display device 100 can be driven at high speed. As a result, even if the number of pixel circuits 400 included in the display device 100 is large, sufficient frame time can be ensured, thus increasing the pixel density of the display device 100. In addition, by increasing the pixel density of the display device 100, the clarity of the image displayed by the display device 100 can be improved. For example, the pixel density of the display device 100 can be 1000ppi or more, 5000ppi or more, or 7000ppi or more. Therefore, the display device 100 can be, for example, a display device for AR or VR, and can be appropriately used in electronic devices such as HMDs where the distance between the display unit and the user is relatively close.

[0514] Note that Figures 33A and 33B show an example of a pixel circuit 400 comprising a total of three transistors, but the pixel circuit of the electronic device according to one embodiment of the present invention is not limited thereto. Hereinafter, examples of pixel circuit structures that can be used in the pixel circuit 400 will be described.

[0515] The pixel circuit 400A shown in Figure 34A includes transistors 500A and 500B and capacitor 600. Figure 34A also shows a light-emitting device 150 connected to the pixel circuit 400A. Furthermore, the pixel circuit 400A is electrically connected to wiring SL, wiring GL, wiring ANO, and wiring VCOM.

[0516] In transistor 500A, the gate is electrically connected to wiring GL, one of the source and drain electrodes is electrically connected to wiring SL, and the other is electrically connected to the gate of transistor 500B and one electrode of capacitor 600. In transistor 500B, one of the source and drain electrodes is electrically connected to wiring ANO, and the other is electrically connected to the anode of light-emitting device 150. The other electrode of capacitor 600 is electrically connected to the anode of light-emitting device 150. The cathode of light-emitting device 150 is electrically connected to wiring VCOM.

[0517] The pixel circuit 400B shown in Figure 34B is a structure in which a transistor 500C is added to the pixel circuit 400A. In addition, the pixel circuit 400B is electrically connected to the wiring V0.

[0518] The pixel circuit 400C shown in Figure 34C is an example of a pixel circuit 400A where transistors 500A and 500B are electrically connected at their gate and back gate. Similarly, the pixel circuit 400D shown in Figure 34D is an example of a pixel circuit 400B using the same transistor. Therefore, the current that the transistor can carry can be increased. Note that all transistors shown here are electrically connected to a pair of gates, but this is not a limitation. Alternatively, transistors including a pair of gates, each electrically connected to a different wiring, can also be used. For example, by using a transistor where one gate is electrically connected to the source, reliability can be improved.

[0519] The pixel circuit 400E shown in FIG35A has a structure in which a transistor 500D is added to the pixel circuit 400B described above. In addition, the pixel circuit 400E is electrically connected to three wirings (wiring GL1, wiring GL2 and wiring GL3) used as gate lines.

[0520] In transistor 500D, the gate is electrically connected to wiring GL3, and one of the source and drain terminals is electrically connected to the gate of transistor 500B, while the other is electrically connected to wiring V0. In addition, the gate of transistor 500A is electrically connected to wiring GL1, and the gate of transistor 500C is electrically connected to wiring GL2.

[0521] By simultaneously turning on transistors 500C and 500D, the source and gate of transistor 500B become at the same potential, thus allowing transistor 500B to be in a non-conducting state. This forcibly blocks the current flowing through the light-emitting device 150. This pixel circuit is preferable when using a display method that alternately sets the display period and the light-off period.

[0522] The pixel circuit 400F shown in Figure 35B has an example where a capacitor 600A is added to the pixel circuit 400E described above. The capacitor 600A is used as a storage capacitor.

[0523] The pixel circuit 400G shown in Figure 35C and the pixel circuit 400H shown in Figure 35D are examples of the pixel circuit 400E or pixel circuit 400F using transistors with gate and back gate electrically connected. Transistors 500A, 500C, and 500D are transistors with gate and back gate electrically connected, while transistor 500B is a transistor with gate and source electrically connected.

[0524] <Top View and Cross-sectional View of the Light-Emitting Device> FIG36A is a top view showing a structural example of a display device 100 according to an embodiment of the present invention, in which a light-emitting device and a light-receiving device are arranged within a pixel. The display device 100 includes a plurality of light-emitting devices 150R emitting red light, a plurality of light-emitting devices 150G emitting green light, a plurality of light-emitting devices 150B emitting blue light, and a plurality of light-receiving devices 160. In FIG36A, in order to simply distinguish each light-emitting device 150, the light-emitting area of ​​each light-emitting device 150 is labeled with the symbols R, G, and B. In addition, the light-receiving area of ​​each light-receiving device 160 is labeled with the symbol PD.

[0525] Light-emitting devices 150R, 150G, 150B, and light-receiving devices 160 are each arranged in a matrix. FIG36A shows an example in which light-emitting devices 150R, 150G, and 150B are arranged in the X direction and the light-receiving device 160 is arranged below them. In addition, FIG36A shows an example of a structure in which light-emitting devices 150 emitting light of the same color are arranged in the Y direction, which intersects the X direction. In the display device 100 shown in FIG36A, for example, a pixel 80 may be constituted by sub-pixels including light-emitting devices 150R, sub-pixels including light-emitting devices 150G, and sub-pixels including light-emitting devices 150B arranged in the X direction, and sub-pixels including the light-receiving device 160 disposed below these sub-pixels.

[0526] As light-emitting devices 150R, 150G, and 150B, EL elements such as OLEDs or QLEDs are preferably used. Examples of light-emitting materials included in the EL element include: fluorescent materials, phosphorescent materials, inorganic compounds (quantum dot materials, etc.), and materials exhibiting thermally activated delayed fluorescence (thermally activated delayed fluorescence (TADF) materials). Furthermore, materials in thermal equilibrium between singlet and triplet excited states can also be used as TADF materials. Such TADF materials have a very short luminescence lifetime (excitation lifetime), thus suppressing efficiency degradation in the high-brightness region of the light-emitting element.

[0527] As the light-receiving device 160, for example, a pn-type or pin-type photodiode can be used. The light-receiving device 160 is used as a photoelectric conversion element that detects light incident on the light-receiving device 160 and generates a charge. The amount of charge generated depends on the amount of incident light.

[0528] In particular, as the light-receiving device 160, it is preferable to use an organic photodiode having a layer containing an organic compound. Organic photodiodes are easy to make thin, lightweight and large-area, and have high flexibility in shape and design, thus they can be applied to a wide variety of display devices.

[0529] In an electronic device according to one embodiment of the present invention, an organic EL element is used as a light-emitting device 150, and an organic photodiode is used as a light-receiving device 160. The organic EL element and the organic photodiode can be formed on the same substrate. Therefore, the organic photodiode can be installed in a display device using an organic EL element. In addition, when it is necessary to separate the organic EL elements from each other and the organic EL elements and the organic photodiodes, it is preferable to use photolithography. As a result, the gaps between the light-emitting devices, between the organic photodiodes, and between the light-emitting devices and the organic photodiodes can be reduced, for example, compared with using a shadow mask such as a metal mask, a display device with a high aperture ratio can be realized.

[0530] FIG. 36A shows a conductor 122 used as a common electrode and a conductor 123 used as a connecting electrode. Here, the conductor 123 is electrically connected to the conductor 122. The conductor 123 is disposed on the outside of the display section where the light-emitting device 150 and the light-receiving device 160 are arranged. In addition, in FIG. 36A, the conductor 122 having a region overlapping with the light-emitting device 150, the light-receiving device 160 and the conductor 123 is indicated by dashed lines.

[0531] The conductor 123 can be disposed along the outer periphery of the display section. For example, it can be disposed along one side of the outer periphery of the display section, or it can be disposed across two or more sides of the outer periphery of the display section. That is, when the top surface of the display section is square, the top surface shape of the conductor 123 can be ribbon-shaped, L-shaped, ko-shaped (corner bracket-shaped), or square, etc.

[0532] FIG36B is a top view showing a structural example of the display device 100, and is also a modified example of the display device 100 shown in FIG36A. The display device 100 shown in FIG36B differs from the display device 100 shown in FIG36A in that it includes a light-emitting device 150IR that emits infrared light. The light-emitting device 150IR can, for example, emit near-infrared light (light with a wavelength of 750 nm or more and 1300 nm or less).

[0533] In the example shown in FIG36B, light-emitting devices 150R, 150G, 150B, and 150IR are arranged in the X direction and light-receiving device 160 is arranged below them. In addition, light-receiving device 160 has the function of detecting infrared light.

[0534] Figure 37A is a cross-sectional view corresponding to the dashed lines A1-A2 in Figure 36A, and Figure 37B is a cross-sectional view corresponding to the dashed lines B1-B2 in Figure 36A. Figure 37C is a cross-sectional view corresponding to the dashed lines C1-C2 in Figure 36A, and Figure 37D is a cross-sectional view corresponding to the dashed lines D1-D2 in Figure 36A. Light-emitting devices 150R, 150G, 150B, and light-receiving device 160 are disposed on the insulator 111. Furthermore, when the display device 100 includes a light-emitting device 150IR, the light-emitting device 150IR is disposed on the insulator 111.

[0535] In this specification, etc., when it is described as "B on A" or "B under A", it is not necessarily required to have an area where A and B are in contact.

[0536] FIG37A shows a cross-sectional structural example of the light-emitting device 150R, light-emitting device 150G and light-emitting device 150B in FIG36A. In addition, FIG37B shows a cross-sectional structural example of the light-receiving device 160 in FIG36A.

[0537] The light-emitting device 150R includes a conductor 121R used as a pixel electrode, a hole injection layer 85R, a hole transport layer 86R, a light-emitting layer 87R, an electron transport layer 88R, a common layer 89, and a conductor 122. The light-emitting device 150G includes a conductor 121G used as a pixel electrode, a hole injection layer 85G, a hole transport layer 86G, a light-emitting layer 87G, an electron transport layer 88G, a common layer 89, and a conductor 122. The light-emitting device 150B includes a conductor 121B used as a pixel electrode, a hole injection layer 85B, a hole transport layer 86B, a light-emitting layer 87B, an electron transport layer 88B, a common layer 89, and a conductor 122. The light-receiving device 160 includes a conductor 121PD used as a pixel electrode, a hole transport layer 86PD, a light-receiving layer 90, an electron transport layer 88PD, a common layer 89, and a conductor 122.

[0538] Conductors 121R, 121G and 121B can be, for example, conductors 121a, 121b and 121c shown in Figures 29A to 30B.

[0539] The common layer 89 is used as an electron injection layer in the light-emitting device 150. On the other hand, the common layer 89 is used as an electron transport layer in the light-receiving device 160. Therefore, the light-receiving device 160 may not include the electron transport layer 88PD.

[0540] It can be said that the hole injection layer 85, the hole transport layer 86, the electron transport layer 88, and the common layer 89 are functional layers.

[0541] Conductor 121, hole injection layer 85, hole transport layer 86, light-emitting layer 87, and electron transport layer 88 can all be separately provided for each element. Common layer 89 and conductor 122 are provided across light-emitting device 150R, light-emitting device 150G, light-emitting device 150B, and light-receiving device 160.

[0542] In addition to the layers shown in FIG37A, the light-emitting device 150 and the light-receiving device 160 also include a hole barrier layer and an electron barrier layer. Furthermore, the light-emitting device 150 and the light-receiving device 160 may also include layers containing bipolar materials (materials with high electron transport and hole transport properties).

[0543] The insulating layer 92 is provided to cover the ends of conductors 121R, 121G, 121B, and 121PD. The ends of the insulating layer 92 are preferably tapered. Alternatively, the insulating layer 92 may be omitted when not required.

[0544] For example, the hole injection layer 85R, hole injection layer 85G, hole injection layer 85B, and hole transport layer 86PD each have a region that contacts the top surface of the conductor 121 and a region that contacts the surface of the insulating layer 92. In addition, the ends of the hole injection layer 85R, the ends of the hole injection layer 85G, the ends of the hole injection layer 85B, and the ends of the hole transport layer 86PD are located on the insulating layer 92.

[0545] Furthermore, a gap is provided between the common layer 89 and the insulating layer 92. This prevents the common layer 89 from contacting the sides of the light-emitting layer 87, the light-receiving layer 90, the hole transport layer 86, and the hole injection layer 85. This also prevents short circuits in the light-emitting device 150 and the light-receiving device 160.

[0546] The shorter the distance between the light-emitting layers 87, the easier it is to form the aforementioned gaps. For example, when the distance is set to 1 μm or less, preferably 500 nm or less, more preferably 200 nm or less, 100 nm or less, 90 nm or less, 70 nm or less, 50 nm or less, 30 nm or less, 20 nm or less, 15 nm or less, or 10 nm or less, the aforementioned gaps can be suitably formed.

[0547] In addition, a protective layer 91 is provided on the conductor 122. The protective layer 91 has the function of preventing impurities such as water from diffusing from above to each light-emitting element.

[0548] The protective layer 91 may, for example, be a single-layer structure or a multilayer structure comprising at least an inorganic insulating film. Examples of inorganic insulating films include silicon oxide films, silicon oxynitride films, silicon oxynitride films, silicon nitride films, aluminum oxide films, aluminum oxynitride films, and hafnium oxide films. Alternatively, semiconductor materials such as indium gallium oxide or indium gallium zinc oxide may be used as the protective layer 91.

[0549] Alternatively, a laminated film of inorganic and organic insulating films can be used as the protective layer 91. For example, it is preferable to sandwich an organic insulating film between a pair of inorganic insulating films. Furthermore, the organic insulating film is preferably used as a planarization film. As a result, the top surface of the organic insulating film can be flattened, thus improving the coverage of the inorganic insulating film on the organic insulating film and thereby improving the barrier properties. In addition, because the top surface of the protective layer 91 is flattened, when structures (such as color filters, electrodes of touch sensors, and lens arrays) are provided above the protective layer 91, the influence of the uneven shape of the underlying structure can be reduced, which is preferable.

[0550] Figure 37A shows a structure in which a light-emitting device 150 has a conductor 121, a hole injection layer 85, a hole transport layer 86, a light-emitting layer 87, an electron transport layer 88, a common layer 89 (electron injection layer), and a conductor 122 stacked sequentially from the bottom layer, and a light-receiving device 160 has a conductor 121PD, a hole transport layer 86PD, a light-receiving layer 90, an electron transport layer 88PD, a common layer 89, and a conductor 122 stacked sequentially from the bottom layer. However, the structure of the light-emitting device or the light-receiving device of the electronic device according to an embodiment of the present invention is not limited to this. For example, the light-emitting device 150 may have a conductor used as a pixel electrode, an electron injection layer, an electron transport layer, a light-emitting layer, a hole transport layer, a hole injection layer, and a conductor used as a common electrode stacked sequentially from the bottom layer, and the light-receiving device 160 may have a conductor used as a pixel electrode, an electron transport layer, a light-receiving layer, a hole transport layer, and a conductor used as a common electrode stacked sequentially from the bottom layer. In this case, the hole injection layer included in the light-emitting device 150 can be used as a common layer, which can be disposed between the hole transport layer included in the light-receiving device 160 and the common electrode. Additionally, in the light-emitting device 150, the electron injection layer can be separated for each individual element.

[0551] Furthermore, when the sensor IS in the electronic device HMD described in Embodiment 1 is a camera device, the sensor IS can be the light-receiving device 160 shown in FIG36A, etc. In other words, by applying the configuration structure example of the light-emitting device and the light-receiving device shown in FIG36A to the display unit DSP, the electronic device HMD described in Structural Example 4 can be constructed.

[0552] <Pixel Layout> Here, a pixel layout different from the pixel layout shown in Figure 36 is described. There are no particular restrictions on the arrangement of subpixels, and various methods can be used. Examples of subpixel arrangements include stripe arrangement, S-stripe arrangement, matrix arrangement, delta arrangement, Bayer arrangement, and Pentile arrangement.

[0553] Furthermore, examples of the top surface shape of a sub-pixel include triangles, quadrilaterals (including squares and rectangular shapes), pentagons, and other polygons, as well as shapes with rounded corners, ellipses, and circles. Here, the top surface shape of the sub-pixel corresponds to the top surface shape of the light-emitting area of ​​the light-emitting device.

[0554] Pixel 80 shown in Figure 38A is arranged in stripes. Pixel 80 shown in Figure 38A is composed of three sub-pixels: sub-pixel 80a, sub-pixel 80b, and sub-pixel 80c. For example, as shown in Figure 39A, sub-pixel 80a can be set as a red sub-pixel R, sub-pixel 80b as a green sub-pixel G, and sub-pixel 80c as a blue sub-pixel B.

[0555] Pixel 80 shown in Figure 38B uses an S-striped arrangement. Pixel 80 shown in Figure 38B consists of three sub-pixels: sub-pixel 80a, sub-pixel 80b, and sub-pixel 80c. For example, as shown in Figure 39B, sub-pixel 80a can be set as the blue sub-pixel B, sub-pixel 80c as the red sub-pixel R, and sub-pixel 80b as the green sub-pixel G.

[0556] Figure 38C shows an example of subpixels of various colors arranged in a zigzag pattern. Specifically, when viewed from above, the upper positions of two subpixels arranged in the column direction (e.g., subpixels 80a and 80b, or subpixels 80b and 80c) are staggered. For example, as shown in Figure 39C, subpixel 80a can also be set as the red subpixel R, subpixel 80b as the green subpixel G, and subpixel 80c as the blue subpixel B.

[0557] The pixel 80 shown in Figure 38D includes a pixel 80a with rounded corners and an approximately trapezoidal top surface shape, a sub-pixel 80b with rounded corners and an approximately triangular top surface shape, and a sub-pixel 80c with rounded corners and an approximately quadrilateral or approximately hexagonal top surface shape. Furthermore, the light-emitting area of ​​sub-pixel 80a is larger than that of sub-pixel 80b. Thus, the shape and size of each sub-pixel can be determined independently. For example, the higher the reliability of the sub-pixel including the light-emitting device, the smaller its size can be. For example, as shown in Figure 39D, sub-pixel 80a can be set as a green sub-pixel G, sub-pixel 80b as a red sub-pixel R, and sub-pixel 80c as a blue sub-pixel B.

[0558] Pixels 70A and 70B shown in Figure 38E are arranged in a Pentile pattern. Figure 38E shows an example of pixel 70A, which includes sub-pixels 80a and 80b, and pixel 70B, which includes sub-pixels 80b and 80c, arranged alternately. For example, as shown in Figure 39E, sub-pixel 80a can also be set as a red sub-pixel R, sub-pixel 80b as a green sub-pixel G, and sub-pixel 80c as a blue sub-pixel B.

[0559] Pixels 70A and 70B shown in Figures 38F and 38G are arranged in a deltaic pattern. Pixel 70A includes two sub-pixels (sub-pixels 80a and 80b) in the upper row (first row) and one sub-pixel (sub-pixel 80c) in the lower row (second row). Pixel 70B includes one sub-pixel (sub-pixel 80c) in the upper row (first row) and two sub-pixels (sub-pixels 80a and 80b) in the lower row (second row). For example, as shown in Figure 39F, sub-pixel 80a can also be set as a red sub-pixel R, sub-pixel 80b as a green sub-pixel G, and sub-pixel 80c as a blue sub-pixel B.

[0560] Figure 38F shows an example of a top surface shape in which each sub-pixel has rounded corners and is approximately quadrilateral, and Figure 38G shows an example of a top surface shape in which each sub-pixel has a rounded top surface.

[0561] In photolithography, the finer the pattern, the more significant the effect of light diffraction becomes. Therefore, when transferring the pattern of the photomask through exposure, fidelity is lost, making it difficult to process the photoresist mask into the desired shape. Consequently, even if the pattern of the photomask is rectangular, it often results in a pattern with rounded corners. Thus, sometimes the top surface shape of a subpixel becomes a polygonal shape with rounded corners, an ellipse, or a circle.

[0562] Furthermore, in a method for manufacturing a display device according to one embodiment of the present invention, the EL layer is processed into an island shape using a photoresist mask. The photoresist film formed on the EL layer needs to be cured at a temperature lower than the heat resistance temperature of the EL layer. Therefore, depending on the heat resistance temperature of the EL layer material and the curing temperature of the photoresist material, the photoresist film is sometimes not sufficiently cured. The insufficiently cured photoresist film sometimes has a shape different from the desired shape during processing. As a result, sometimes the top surface shape of the EL layer becomes a polygon with rounded corners, an ellipse, or a circle. For example, when forming a photoresist mask with a square top surface shape, sometimes a photoresist mask with a circular top surface shape is formed, and the top surface shape of the EL layer becomes circular.

[0563] In addition, to make the top surface shape of the EL layer the desired shape, a pre-correction mask pattern technique (OPC (Optical Proximity Correction) technique) can be used to make the design pattern consistent with the transfer pattern. Specifically, in the OPC technique, correction patterns are added to the corners and other parts of the graphics on the mask pattern.

[0564] Pixels 80 shown in Figures 40A to 40C are arranged in stripes.

[0565] Figure 40A shows an example of a sub-pixel having a square top surface shape, Figure 40B shows an example of a sub-pixel having a top surface shape connecting two semicircles and a square, and Figure 40C shows an example of a sub-pixel having an elliptical top surface shape.

[0566] Pixels 80 shown in Figures 40D to 40F are arranged in a matrix.

[0567] Figure 40D shows an example of a top surface shape where each sub-pixel has a square shape, Figure 40E shows an example of a top surface shape where each sub-pixel has rounded corners and an approximately square shape, and Figure 40F shows an example of a top surface shape where each sub-pixel has a rounded shape.

[0568] Pixel 80 shown in Figures 40A to 40F is composed of four sub-pixels: sub-pixels 80a, 80b, 80c, and 80d. Sub-pixels 80a, 80b, 80c, and 80d emit light of different colors. For example, as shown in Figures 41A and 41B, sub-pixels 80a, 80b, 80c, and 80d can be set as red, green, blue, and white sub-pixels, respectively. Alternatively, sub-pixels 80a, 80b, 80c, and 80d can be set as red, green, blue, and infrared light-emitting sub-pixels, respectively.

[0569] Sub-pixel 80d includes a light-emitting device. This light-emitting device includes, for example, a pixel electrode, an EL layer, and a conductor 123 used as a common electrode. Furthermore, the pixel electrode may be made of the same material as conductors 121a, 121b, 121c, 122a, 122b, or 122c. Similarly, the EL layer may be made of the same material as EL layers 141a, 141b, or 141c.

[0570] Figure 40G shows an example of a pixel 80 arranged in two rows and three columns. Pixel 80 includes three sub-pixels (sub-pixel 80a, sub-pixel 80b, and sub-pixel 80c) in the upper row (first row) and three sub-pixels 80d in the lower row (second row). In other words, pixel 80 includes sub-pixels 80a and 80d in the left column (first column), sub-pixels 80b and 80d in the middle column (second column), and sub-pixels 80c and 80d in the right column (third column). As shown in Figure 40G, by aligning the sub-pixel configuration of the upper and lower rows, waste generated during the manufacturing process can be efficiently removed. This provides a display device with high display quality.

[0571] Figure 40H shows an example of a pixel 80 composed of two rows and three columns. The upper row (first row) of pixel 80 includes three sub-pixels (sub-pixel 80a, sub-pixel 80b, and sub-pixel 80c) and the lower row (second row) includes one sub-pixel (sub-pixel 80d). In other words, the left column (first column) of pixel 80 includes sub-pixel 80a, the middle column (second column) includes sub-pixel 80b, and the right column (third column) includes sub-pixel 80c, and spans the above three columns and includes pixel 80d.

[0572] Additionally, for example, as shown in Figures 41C and 41D, in pixel 80 shown in Figures 40G and 40H, sub-pixel 80a can be set as red sub-pixel R, sub-pixel 80b can be set as green sub-pixel G, sub-pixel 80c can be set as blue sub-pixel B, and sub-pixel 80d can be set as white sub-pixel W.

[0573] The display device of one embodiment of the present invention may also include a light-receiving device in the pixel.

[0574] Alternatively, a structure can be adopted in which three of the four sub-pixels included in pixel 80 shown in FIG40G include light-emitting devices and the remaining one includes light-receiving devices.

[0575] As a light-receiving device, for example, a pn-type or pin-type photodiode can be used. The light-receiving device is used as a photoelectric conversion element (also called a photoelectric conversion element) that detects light incident on the light-receiving element and generates charge. The amount of charge generated from the light-receiving device depends on the amount of light incident on the light-receiving device.

[0576] In particular, as a light-receiving device, an organic photodiode having a layer containing an organic compound is preferred. Organic photodiodes are easy to make thin, lightweight and large-area, and have high flexibility in shape and design, thus they can be applied to a wide variety of display devices.

[0577] In one embodiment of the present invention, an organic EL device is used as a light-emitting device, and an organic photodiode is used as a light-receiving device. The organic EL device and the organic photodiode can be formed on the same substrate. Therefore, the organic photodiode can be installed in a display device using an organic EL device.

[0578] The light-receiving device includes at least an active layer between a pair of electrodes, which serves as a photoelectric conversion layer. In this specification, etc., one of the pair of electrodes is sometimes referred to as the pixel electrode and the other as the common electrode.

[0579] For example, sub-pixels 80a, 80b, and 80c may be sub-pixels of three colors, R, G, and B, respectively, and sub-pixel 80d may be a sub-pixel that includes a light-receiving device. In this case, the fourth layer may include at least an active layer.

[0580] One of the pair of electrodes included in the light-receiving device is used as the anode, and the other electrode is used as the cathode. The following explanation will use the case where the pixel electrode is used as the anode and the common electrode is used as the cathode as an example. By applying a reverse bias voltage between the pixel electrode and the common electrode to drive the light-receiving device, the light incident on the light-receiving device can be detected to generate a charge, which can then be extracted as a current. Alternatively, the pixel electrode can be used as the cathode and the common electrode as the anode.

[0581] The light-receiving device can also be manufactured using the same method as the light-emitting device. The island-shaped active layer (also known as the photoelectric conversion layer) included in the light-receiving device is not formed by a pattern of a metal mask, but is formed by depositing a film as the active layer on one surface and then processing it. Therefore, the island-shaped active layer can be formed with a uniform thickness. In addition, by providing a sacrificial layer on the active layer, damage to the active layer during the manufacturing process of the display device can be reduced, thereby improving the reliability of the light-receiving device.

[0582] Here, the function of a layer shared by the light-receiving device and the light-emitting device may sometimes differ between the light-emitting device and the light-receiving device. In this specification, components are sometimes referred to according to their function in the light-emitting device. For example, a hole injection layer functions as both a hole injection layer and a hole transport layer in both the light-emitting device and the light-receiving device. Similarly, an electron injection layer functions as both an electron injection layer and an electron transport layer in both the light-emitting device and the light-receiving device. Furthermore, sometimes a layer shared by the light-receiving device and the light-emitting device has the same function in both the light-emitting device and the light-receiving device. A hole transport layer is used as a hole transport layer in both the light-emitting device and the light-receiving device, and an electron transport layer is used as an electron transport layer in both the light-emitting device and the light-receiving device.

[0583] The active layer of the light-receiving device includes a semiconductor. Examples of such semiconductors include inorganic semiconductors such as silicon and organic semiconductors containing organic compounds. In this embodiment, an example of using an organic semiconductor as the semiconductor contained in the active layer is shown. By using an organic semiconductor, the light-emitting layer and the active layer can be formed in the same way (e.g., vacuum evaporation) and can share the same manufacturing equipment, which is preferable.

[0584] Examples of electron-accepting organic semiconductor materials include fullerenes (e.g., C60, C70, etc.) and fullerene derivatives, which are n-type semiconductors contained in the active layer. Fullerenes have a soccer ball shape, which is energy stable. Fullerenes have deep (low) HOMO and LUMO energy levels. Because of the deep LUMO energy level of fullerenes, their electron accepting capacity is extremely high. Generally, when π-electron conjugation (resonance) expands in a plane, such as in benzene, electron donor capacity increases. On the other hand, fullerenes have a spherical shape, and although π-electrons expand extensively, their electron accepting capacity is high. With high electron accepting capacity, charge separation is induced quickly and efficiently, which is beneficial for light-receiving devices. C60 and C70 both have broad absorption bands in the visible light region, especially C70, which has a larger π-electron conjugation system than C60 and also has a broad absorption band in the long wavelength region, so it is preferred. In addition, as fullerene derivatives, examples include: methyl [6,6]-phenyl-C71-butyrate (abbreviated as PC70BM), methyl [6,6]-phenyl-C61-butyrate (abbreviated as PC60BM), and 1',1”,4',4”-tetrahydro-bis[1,4]methanenaphthaleno[1,2:2',3',56,60:2”,3”][5,6]fullerene-C60 (abbreviated as ICBA), etc.

[0585] As materials for n-type semiconductors, examples include metal complexes with a quinoline skeleton, metal complexes with a benzoquinoline skeleton, metal complexes with a benzoxazole skeleton, metal complexes with a thiazole skeleton, benzodiazepine derivatives, triazole derivatives, imidazole derivatives, benzoxazole derivatives, thiazole derivatives, phenoline derivatives, quinoline derivatives, benzoquinoline derivatives, quinoline derivatives, dibenzoquinoline derivatives, pyridine derivatives, bipyridine derivatives, pyrimidine derivatives, naphthalene derivatives, anthracene derivatives, coumarin derivatives, rhodamine derivatives, triazine derivatives, quinone derivatives, etc.

[0586] As materials for p-type semiconductors contained in the active layer, examples include copper(II) phthalocyanine (CuPc), tetraphenyldibenzoperiflanthene (DBP), zinc phthalocyanine (ZnPc), tin phthalocyanine (SnPc), quinacridone, and other organic semiconductor materials with electronic donor properties.

[0587] In addition, carbazole derivatives, thiophene derivatives, furan derivatives, and compounds having an aromatic amine skeleton can be cited as materials for p-type semiconductors. Furthermore, naphthalene derivatives, anthracene derivatives, pyrene derivatives, terphenyl derivatives, pyrrole derivatives, benzofuran derivatives, benzothiophene derivatives, indole derivatives, dibenzofuran derivatives, dibenzothiophene derivatives, indole carbazole derivatives, violet derivatives, phthalocyanine derivatives, naphthylphthalocyanine derivatives, quinacridone derivatives, polyphenylene oxide derivatives, polyphenylene oxide derivatives, poly(p-phenylene oxide) derivatives, poly(pyrrole) derivatives, polyvinylcarbazole derivatives, polythiophene derivatives, etc., can be cited as materials for p-type semiconductors.

[0588] The HOMO energy level of an organic semiconductor material with electron donor properties is preferably shallower (higher) than that of an organic semiconductor material with electron acceptor properties. The LUMO energy level of an organic semiconductor material with electron donor properties is preferably shallower (higher) than that of an organic semiconductor material with electron acceptor properties.

[0589] Preferably, spherical fullerenes are used as organic semiconductor materials with electron-accepting properties, and even more preferably, organic semiconductor materials with shapes similar to planar structures are used as organic semiconductor materials with electron-donating properties. Molecules with similar shapes tend to aggregate easily. When the same type of molecule aggregates, the carrier transport can be improved because the energy levels of the molecular orbitals are similar.

[0590] For example, it is preferable to co-deposit an n-type semiconductor and a p-type semiconductor to form the active layer. Alternatively, an n-type semiconductor and a p-type semiconductor may be stacked to form the active layer.

[0591] The light-receiving device may also include a layer comprising a material with high hole transport, a material with high electron transport, or a material with bipolarity (a material with both high electron transport and high hole transport) in addition to the active layer. Furthermore, it may also include a layer comprising one or more of a material selected from a material with high hole injection, a hole blocking material, a material with high electron injection, and an electron blocking material.

[0592] The light-receiving device may use low-molecular-weight compounds or high-molecular-weight compounds, and may also contain inorganic compounds. The layers constituting the light-receiving device may be formed by vapor deposition (including vacuum vapor deposition), transfer printing, printing, inkjet printing or coating.

[0593] For example, polymeric compounds such as poly(3,4-ethylenedioxythiophene) / poly(styrene sulfonic acid) (PEDOT / PSS) and inorganic compounds such as molybdenum oxide and copper iodide (CuI) can be used as hole transport materials. Additionally, inorganic compounds such as zinc oxide (ZnO) can be used as electron transport materials.

[0594] In addition, as the active layer, polymeric compounds such as poly[[4,8-bis[5-(2-ethylhexyl)-2-thiophene]benzo[1,2-b:4,5-b']dithiophene-2,6-diyl]-2,5-thiophenediyl[5,7-bis(2-ethylhexyl)-4,8-dioxo-4H,8H-benzo[1,2-c:4,5-c']dithiophene-1,3-diyl]] (abbreviated as PBDB-T) or PBDB-T derivatives can be used. For example, methods such as dispersing the acceptor material in PBDB-T or PBDB-T derivatives can be used.

[0595] In addition, the active layer may also contain a mixture of three or more materials. For example, materials of n-type semiconductors, materials of p-type semiconductors, and a third material may be mixed to expand the wavelength region. In this case, the third material may be either a low-molecular-weight compound or a high-molecular-weight compound.

[0596] In a display device where pixels include light-emitting devices and light-receiving devices, pixels have the function of receiving light, so that they can detect the contact or approach of an object while displaying an image. For example, all sub-pixels included in the display device can display images, or a portion of the sub-pixels can act as light sources to emit light while the remaining sub-pixels display images.

[0597] In the display section of a display device according to one embodiment of the present invention, the light-emitting devices are arranged in a matrix, thereby enabling the display of images. Furthermore, in this display section, the light-receiving devices are arranged in a matrix, thus the display section, in addition to displaying images, also possesses one or both of the functions of imaging and sensing. The display section can be used as an image sensor or a touch sensor, etc. That is, by detecting light from the display section, it is possible to capture images or detect the approach or contact of an object (fingers, hands, or pens, etc.). Moreover, in one embodiment of the present invention, the display device can use the light-emitting devices as the light source for the sensor. Therefore, it is not necessary to separately provide a light-receiving section and a light source outside the display device, thus reducing the number of components in the electronic device.

[0598] In a display device according to one embodiment of the present invention, since the light receiving device can detect the reflected light (or scattered light) emitted by the light-emitting device included in the display section when the light is reflected (or scattered) by the object, the detection of camera or touch operation can be performed even in the dark.

[0599] When the light-receiving device is used as an image sensor, the display device can use the light-receiving device to capture images. For example, the display device of this embodiment can be used as a scanner.

[0600] For example, image sensors can be used to acquire data based on biometric data such as fingerprints and palm prints. In other words, biometric sensors can be installed within the display device. By installing biometric sensors within the display device, compared to installing the display device and the biometric sensors separately, the number of components in the electronic device can be reduced, thereby enabling miniaturization and weight reduction of the electronic device.

[0601] Furthermore, when the light-receiving device is used as a touch sensor, the display device of this embodiment uses the light-receiving device to detect the approach or contact of an object.

[0602] The pixels shown in Figures 42A to 42D include sub-pixels G, B, R and PS.

[0603] The pixels shown in Figure 42A are arranged in a stripe pattern. The pixels shown in Figure 42B are arranged in a matrix pattern.

[0604] Figures 42C and 42D show an example of a pixel arranged across two rows and three columns. Three sub-pixels (sub-pixel G, sub-pixel B, and sub-pixel R) are arranged in the upper row (first row). In Figure 42C, three sub-pixels PS are arranged in the lower row (second row). On the other hand, in Figure 42D, two sub-pixels PS are arranged in the lower row (second row). As shown in Figure 42C, by aligning the sub-pixel configuration of the upper and lower rows, waste generated during the manufacturing process can be efficiently removed. This provides a display device with high display quality. Note that the sub-pixel layout is not limited to the structures shown in Figures 42A to 42D.

[0605] Sub-pixel R, sub-pixel G, and sub-pixel B each include a light-emitting device that emits white light. In sub-pixel R, sub-pixel G, and sub-pixel B, a corresponding color layer is provided in a manner that overlaps with the light-emitting device.

[0606] The sub-pixel PS includes a light-receiving device. There are no particular limitations on the wavelength of the light detected by the sub-pixel PS.

[0607] The light-receiving device included in the sub-pixel PS is preferably for detecting visible light, such as one or more of blue, violet, blue-violet, green, yellow-green, yellow, orange, and red. Alternatively, the light-receiving device included in the sub-pixel PS can also detect infrared light.

[0608] The display device 100 shown in FIG42E has a layer 353 including a light-receiving device, a functional layer 355 and a layer 357 including a light-emitting device between a substrate 351 and a substrate 359.

[0609] Functional layer 355 includes circuitry for driving the light-receiving device and circuitry for driving the light-emitting device. Functional layer 355 may include, for example, switches, transistors, capacitors, resistors, wiring, and terminals. Alternatively, when driving the light-emitting and light-receiving devices in a passive matrix manner, switches and transistors may not be provided.

[0610] For example, as shown in FIG42E, by reflecting the light emitted by the light-emitting device in the layer 357 including the light-emitting device in and around the human eye, the light-receiving device in the layer 353 including the light-receiving device detects the reflected light. Thus, information about the surroundings, surface or interior of the human eye (e.g., blink count, eye movement and eyelid movement) can be detected.

[0611] Note that the insulators, conductors, and semiconductors disclosed in this specification, etc., can be formed by PVD (Physical Vapor Deposition) and CVD (Chemical Vapor Deposition). Examples of PVD methods include sputtering, resistance heating evaporation, electron beam evaporation, and PLD (Pulsed Laser Deposition). Examples of CVD methods include plasma CVD and thermal CVD. In particular, examples of thermal CVD methods include MOCVD (Metal Organic Chemical Vapor Deposition) and ALD (Atomic Layer Deposition).

[0612] Since thermal CVD is a film-forming method that does not use plasma, it has the advantage of not producing defects caused by plasma damage.

[0613] The film formation using thermal CVD can be performed by simultaneously supplying source gas and oxidant into the processing chamber, setting the pressure in the processing chamber to atmospheric pressure or depressurization, so that it reacts near the substrate or on the substrate and is deposited on the substrate.

[0614] Alternatively, film formation using the ALD method can be performed as follows: the pressure inside the processing chamber is set to atmospheric pressure or reduced pressure, and the source gases used for the reaction are introduced into the processing chamber sequentially, and the gases are introduced repeatedly in this order. For example, two or more source gases can be supplied sequentially into the processing chamber by switching various switching valves (also called high-speed valves). To prevent mixing of multiple source gases, an inert gas (e.g., argon or nitrogen) is introduced simultaneously or after the first source gas, and then the second source gas is introduced. Note that when an inert gas is introduced simultaneously, the inert gas is used as a carrier gas. Furthermore, an inert gas can be introduced simultaneously with the second source gas. Alternatively, the first source gas can be evacuated by vacuum pumping without introducing an inert gas, and then the second source gas can be introduced. The first source gas adheres to the substrate surface to form a first thinner layer, and the second source gas introduced subsequently reacts with this first thinner layer, thereby stacking the second thinner layer on the first thinner layer to form a thin film. By repeatedly introducing the gas in this order until the desired thickness is obtained, a thin film with good step coverage can be formed. Since the thickness of the thin film can be adjusted according to the number of times the gas is introduced in sequence, the ALD method can accurately adjust the thickness and is suitable for manufacturing micro FETs.

[0615] Various films, such as metal films, semiconductor films, and inorganic insulating films, disclosed in the embodiments described above can be formed using thermal CVD methods such as MOCVD and ALD. For example, when forming an In-Ga-Zn-O film, trimethylindium (In(CH3)3), trimethylgallium (Ga(CH3)3), and dimethylzinc (Zn(CH3)2) can be used. Furthermore, not limited to the above combinations, triethylgallium (Ga(C2H5)3) can be used instead of trimethylgallium, and diethylzinc (Zn(C2H5)2) can be used instead of dimethylzinc.

[0616] For example, when forming a hafnium oxide film using a film-forming apparatus employing the ALD method, two gases are used: a source gas obtained by vaporizing a liquid containing a solvent and a hafnium precursor compound (e.g., hafnium alkoxide, tetradimethylamine hafnium (TDMAH, Hf[N(CH3)2]4), etc.); and ozone (O3) as an oxidant. Tetra(ethylmethylamine)hafnium can also be cited as another material.

[0617] For example, when forming an alumina film using an ALD (Alternating Discharge) film-forming apparatus, two gases are used: a source gas obtained by vaporizing a liquid containing a solvent and an aluminum precursor compound (e.g., trimethylaluminum (TMA, Al(CH3)3)); and H2O as an oxidant. Other materials include tris(dimethylamine)aluminum, triisobutylaluminum, and aluminum tris(2,2,6,6-tetramethyl-3,5-heptadecanoic acid).

[0618] For example, when forming a silicon oxide film using a film-forming apparatus employing the ALD method, hexachlorosilane is attached to the surface to be film-forming, and free radicals of oxidizing gases (O2, nitrous oxide) are supplied to react with the attached material.

[0619] For example, when forming a tungsten film using an ALD (Alternating Discharge) method film-forming apparatus, WF6 gas and B2H6 gas are introduced sequentially and repeatedly to form an initial tungsten film, and then WF6 gas and H2 gas are introduced sequentially and repeatedly to form a tungsten film. Note that SiH4 gas can also be used instead of B2H6 gas.

[0620] For example, when depositing an In-Ga-Zn-O film as an oxide semiconductor film using an ALD film deposition apparatus, a precursor (generally, sometimes referred to as a precursor or metal precursor) and an oxidant (generally, sometimes referred to as a reactant, reactant, or non-metal precursor) are introduced sequentially and repeatedly to form the film. Specifically, for example, an In-O layer is formed by introducing In(CH3)3 gas as a precursor and O3 gas as an oxidant, then a GaO layer is formed by introducing Ga(CH3)3 gas as a precursor and O3 gas as an oxidant, and then a ZnO layer is formed by introducing Zn(CH3)2 gas as a precursor and O3 gas as an oxidant. Note that the order of these layers is not limited to the example above. In addition, these gases can also be used to form mixed oxide layers such as In-Ga-O layers, In-Zn-O layers, Ga-Zn-O layers, etc. Note that while H₂O gas, obtained by bubbling with an inert gas such as Ar, can be used instead of O₃ gas, it is preferable to use O₃ gas that does not contain H. Additionally, In(C₂H₅)₃ gas can be used instead of In(CH₃)₃ gas. Furthermore, Ga(C₂H₅)₃ gas can be used instead of Ga(CH₃)₃ gas. Additionally, Zn(CH₃)₂ gas can also be used.

[0621] Furthermore, the screen ratio (aspect ratio) of the display unit included in the electronic device according to one embodiment of the present invention is not particularly limited. For example, the display unit may correspond to various screen ratios such as 1:1 (square), 4:3, 16:9, 16:10, etc.

[0622] Furthermore, the shape of the display portion included in the electronic device according to one embodiment of the present invention is not particularly limited. For example, the display portion may correspond to various shapes such as rectangular, polygonal (e.g., octagonal), circular, elliptical, etc.

[0623] Note that this embodiment can be appropriately combined with other embodiments shown in this specification.

[0624] Embodiment 4 In this embodiment, a display module of an electronic device that can be applied to one embodiment of the present invention will be described.

[0625] <Example of the structure of the display module> First, a display module of a display device including an electronic device applicable to one embodiment of the present invention will be described.

[0626] Figure 43A shows a perspective view of the display module 1280. The display module 1280 includes a display device 100 and an FPC 1290.

[0627] The display module 1280 includes a substrate 1291 and a substrate 1292. The display module 1280 includes a display section 1281. The display section 1281 is the area in the display module 1280 that displays images, and is also the area that can recognize light from each pixel provided in the pixel section 1284 described later.

[0628] FIG43B is a perspective view schematically showing the structure of the substrate 1291. A circuit section 1282, a pixel circuit section 1283 on the circuit section 1282, and a pixel section 1284 on the pixel circuit section 1283 are stacked on the substrate 1291. Furthermore, a terminal section 1285 for connection to the FPC 1290 is provided in a portion of the substrate 1291 that does not overlap with the pixel section 1284. The terminal section 1285 is electrically connected to the circuit section 1282 via a wiring section 1286 composed of multiple wirings.

[0629] In addition, the pixel section 1284 and the pixel circuit section 1283 are, for example, equivalent to the pixel layer PXAL described above. In addition, the circuit section 1282 is, for example, equivalent to the circuit layer SICL described above.

[0630] The pixel unit 1284 includes a plurality of pixels 1284a arranged periodically. A magnified view of a pixel 1284a is shown on the right side of FIG43B. Pixel 1284a includes light-emitting devices 1430a, 1430b, and 1430c, each emitting a different color. Note that, as shown in FIG43B, the light-emitting devices 1430a, 1430b, and 1430c (for example, the plurality of light-emitting devices corresponding to the aforementioned light-emitting devices 150a, 150b, and 150c) can be arranged in a stripe pattern. Alternatively, various arrangement methods such as a deltaic arrangement and a Pentile arrangement can be used.

[0631] The pixel circuit section 1283 includes a plurality of pixel circuits 1283a arranged periodically.

[0632] A pixel circuit 1283a controls the light emission of three light-emitting devices included in a pixel 1284a. A pixel circuit 1283a can be composed of three circuits that control the light emission of one light-emitting device. For example, the pixel circuit 1283a can adopt a structure in which one or more of a select transistor, a current control transistor (driving transistor), and a capacitor are selected for each light-emitting device. In this case, a gate signal is input to the gate of the select transistor, and a source signal is input to either the source or the drain. Thus, an active matrix display device is realized.

[0633] The circuit section 1282 includes circuitry for driving each pixel circuit 1283a of the pixel circuit section 1283. For example, it is preferable to include one or both of a gate line driving circuit and a source line driving circuit. In addition, it may have one or more selected from arithmetic circuits, memory circuits, and power supply circuits.

[0634] The FPC1290 is used for wiring to supply video signals or power potential to the circuit section 1282 from the outside. In addition, ICs can also be mounted on the FPC1290.

[0635] The display module 1280 can adopt a structure in which one or both of the pixel circuit section 1283 and the circuit section 1282 are stacked on the lower side of the pixel section 1284, so that the display section 1281 can have an extremely high aperture ratio (effective display area ratio). For example, the aperture ratio of the display section 1281 can be 40% or more and less than 100%, preferably 50% or more and less than 95%, and more preferably 60% or more and less than 95%. In addition, the pixels 1284a can be arranged in an extremely high density, thereby enabling the display section 1281 to have extremely high resolution. For example, the display section 1281 is preferably arranged with a resolution of 20,000 ppi or less, or 30,000 ppi or less and more than 2,000 ppi, more preferably more than 3,000 ppi, further preferably more than 5,000 ppi, and even more preferably more than 6,000 ppi.

[0636] Because this display module 1280 has extremely high resolution, it is suitable for VR devices such as head-mounted displays or AR devices such as glasses. For example, when the structure has a display section that allows the display module 1280 to be seen through a lens, the display module 1280 includes a high-resolution display section 1281, so even when the display section is magnified by a lens, the pixels are not visible, thus enabling a highly immersive display. Furthermore, not limited to this, the display module 1280 can also be used in electronic devices with relatively small display sections. For example, it is suitable for display sections in wearable electronic devices such as watch-type devices.

[0637] Note that this embodiment can be appropriately combined with other embodiments shown in this specification.

[0638] Embodiment 5 In this embodiment, as an example of an electronic device according to one embodiment of the present invention, an electronic device using a display device will be described.

[0639] Figures 44A and 44B show the appearance of the electronic device 8300 of the head-mounted display.

[0640] The electronic device 8300 includes a housing 8301, a display unit 8302, an operation button 8303, and a strip-shaped fixing tool 8304.

[0641] The operation button 8303 has the functions of a power button, etc. In addition, the electronic device 8300 may include a button in addition to the operation button 8303.

[0642] Additionally, as shown in FIG44C, a lens 8305 can be provided between the display unit 8302 and the user's eyes. The user can view the magnified image on the display unit 8302 through the lens 8305, thus improving the realism. At this time, as shown in FIG44C, a dial 8306 for adjusting the eyepiece focus and changing the position of the lens can also be provided.

[0643] The display unit 8302 is preferably a display device with extremely high resolution. By using a high-resolution display device as the display unit 8302, even when magnified by the lens 8305 as shown in FIG44C, the pixels can be displayed without being visible to the user, and the image has a high degree of realism.

[0644] Figures 44A to 44C show examples including a display unit 8302. By adopting the above structure, the number of components can be reduced.

[0645] The display unit 8302 displays two images, one for the right eye and one for the left eye, side by side in the left and right areas respectively. This allows for the display of stereoscopic images utilizing binocular parallax.

[0646] Alternatively, an image that can be viewed by both eyes can be displayed over the entire area of ​​the display unit 8302. This allows for the display of a panoramic image spanning both ends of the field of view, thus enhancing the sense of realism.

[0647] Here, the display unit 8302 in the electronic device 8300 is preferably equipped with a mechanism that adjusts the curvature of the display unit 8302 to an appropriate value based on one or more factors selected from the user's head size and eye position. For example, the user can also adjust the curvature of the display unit 8302 by operating a dial 8307 used to adjust the curvature of the display unit 8302. Alternatively, a mechanism may be provided in the housing 8301 that detects the user's head size or eye position (e.g., a camera, a contact sensor, a non-contact sensor, etc.) and adjusts the curvature of the display unit 8302 based on the sensor's detection data.

[0648] When using lens 8305, it is preferable to have a structure that synchronizes the curvature of display unit 8302 and adjusts the position and angle of lens 8305. Additionally, dial 8306 may also have the function of adjusting the angle of the lens.

[0649] Figures 44E and 44F show the structure of a drive unit 8308 that controls the curvature of the display unit 8302. The drive unit 8308 is fixed to at least a portion of the display unit 8302. The drive unit 8308 has the function of deforming the display unit 8302 by changing or moving the portion fixed to the display unit 8302.

[0650] Figure 44E shows a schematic diagram of a user 8310 with a large head wearing the shell 8301. At this time, the drive unit 8308 adjusts the shape of the display unit 8302 in such a way that the curvature becomes smaller (the radius of curvature becomes larger).

[0651] On the other hand, Figure 44F shows the case where a user 8311, whose head is smaller than that of the user 8310, wears the shell 8301. Furthermore, the distance between the eyes of the user 8311 is narrower than that of the user 8310. In this case, the drive unit 8308 adjusts the shape of the display unit 8302 in such a way that the curvature increases (the radius of curvature decreases). In Figure 44F, the position and shape of the display unit 8302 in Figure 44E are shown in dashed lines.

[0652] Thus, by adopting a structure that adjusts the curvature of the display unit 8302, the electronic device 8300 can provide the best display for users of all ages and genders.

[0653] Furthermore, by changing the curvature of the display unit 8302 according to the content displayed on the display unit 8302, a high degree of realism can be provided to the user. For example, the curvature of the display unit 8302 can be made to vibrate to represent shaking. In this way, various performances can be performed according to the scenes in the content, thereby providing a new experience for the user. Moreover, at this time, by linking with the vibration module provided in the housing 8301, an even more realistic display can be achieved.

[0654] In addition, as shown in FIG44D, the electronic device 8300 may also include two display units 8302.

[0655] Since it includes two display units 8302, the user can see one display unit with one eye and the other display unit with the other eye. Therefore, even in cases of 3D display using parallax, high-resolution images can be displayed. Furthermore, the display unit 8302 is curved into an arc shape approximately centered on the user's eyes. This ensures that the distance from the user's eyes to the display surface of the display unit is equidistant, allowing the user to see a more natural image. Because the user's eyes are located in the normal direction to the display surface of the display unit, the changes in brightness and color intensity of light from the display unit depending on the viewing angle are practically negligible, thus enabling the display of more realistic images.

[0656] Figures 45A to 45C are diagrams showing the appearance of an electronic device 8300 that differs from the electronic devices 8300 shown in each of Figures 44A to 44D. Specifically, for example, Figures 45A to 45C differ from Figures 44A to 44D in that they include a head-mounted fixation tool 8304...

Claims

1. An electronic device comprising: Display section; The display unit includes a first region and a second region. The first region includes a first light-emitting device, and the second region includes a second light-emitting device and a light-receiving device. The sensor unit includes a diamond layer and is located in a region overlapping with the first region. A wall exists between the first light-emitting device and the second light-emitting device. First light from the second light-emitting device is incident on the sensor unit, and second light is incident on the light-receiving device. Temperature is measured from the intensity of the second light.

2. The electronic device of claim 1, wherein the diamond layer has an NV center.

3. The electronic device of claim 1, wherein the sensor portion does not overlap with the first region.

4. The electronic device of claim 1, wherein the first light-emitting device has a laser source.

Images