Top reflector, semiconductor processing system, and film deposition method

Abstract

The reflector includes a reflector body arranged to overlap with a reaction chamber of a semiconductor processing system. The reflector body has a recessed surface and a reflective surface extending between a first longitudinal edge and a second longitudinal edge of the reflector body, the reflective surface and the recessed surface being spaced apart by the thickness of the reflector body. The recessed surface and the reflective surface define a high-temperature port, two or more elongated slots, and two or more shortened slots extending through the thickness of the reflector body. The number of shortened slots exceeds the number of elongated slots to deflect coolant toward the second longitudinal edge of the reflector body toward the reaction chamber. A cooling assemblies, semiconductor processing systems, and methods for cooling the reaction chamber during the deposition of a film onto a substrate supported within the reaction chamber are also described.

Description

Technical Field

[0001] This disclosure generally relates to the deposition of a film onto a substrate. More specifically, this disclosure relates to controlling the wall temperature within the reaction chamber during the deposition of the film onto the substrate supported in the reaction chamber. Prior Technology

[0002] Films are typically deposited onto substrates to fabricate semiconductor devices, such as power electronics and very large-scale integrated circuits. Film deposition is generally achieved by loading the substrate into a reactor and heating the substrate to the desired deposition temperature, usually using a heater thermally coupled to the reactor. Once the substrate is properly heated, the precursor flows through the reactor and across the substrate. As the precursor flows across the substrate, the film is deposited onto it, typically at a rate corresponding to the substrate temperature. Coolant can be supplied to the outside of the reactor during film deposition to maintain the reactor wall temperature below the temperature required for the precursor to deposit onto the reactor wall. Typically, the coolant slows down the rate at which the precursor deposits onto the inner surface of the reactor wall, limiting the tendency of such deposition to interfere with reactor operation by reducing the transmissibility of the reactor wall.

[0003] In some deposition operations, membranes may still deposit on the inner surface of the reactor wall despite external reactor cooling. For example, flow patterns within some reactors may include regions of relatively slow and relatively fast flow, such as the relative advancing and retreating edges of a rotating substrate relative to precursor flow, which can cause temperature variations on the inner surface of the reactor wall. Localized heating at such locations can, over time, lead to membrane deposition on the inner surface of the reactor wall defining slow or turbulent regions. Once formed, such membranes can limit the reactor wall transmittance, further increasing reactor wall temperature and accelerating membrane deposition on the inner surface of the reactor. In membrane deposition operations with long durations or high deposition temperatures, such as during the deposition of thicker epitaxial layers, membrane deposition on the inner wall surface can lead to contamination and / or chamber failure due to reactor wall devitrification.

[0004] During film deposition operations, various strategies exist to manage film deposition onto the inner surface of the reactor wall. For example, the continuous passage of the substrate through the reactor for film deposition can be interrupted to remove the film deposited onto the inner surface of the reactor wall, for example, by allowing etchant to flow through the reactor between deposition operations. Deposition operations requiring longer deposition times can be divided into two or more deposition events. Dividing the deposition operation into two or more deposition events allows for the removal of the substrate after the first deposition event, the removal of the substrate from the reactor to allow the accumulated film to be removed from the inner surface of the reactor wall, and the return of the substrate to the reactor for subsequent deposition events.

[0005] Such systems and methods are generally considered suitable for their intended purpose. However, there is still a need in the art for improvements in reaction chamber cooling, semiconductor processing systems, and methods for cooling reaction chambers. This disclosure provides a solution to this need. Summary of the Invention

[0006] A reflector is provided. The reflector includes a reflector body arranged to overlap with a reaction chamber of a semiconductor processing system. The reflector body has a grooved surface and a reflective surface extending between a first longitudinal edge and a second longitudinal edge of the reflector body, the reflective surface being spaced from the grooved surface by a thickness of the reflector body. The grooved surface and the reflective surface define a pyrometer port, two or more elongated slots, and two or more shortened slots extending through the thickness of the reflector body. The number of shortened slots exceeds the number of elongated slots to bias coolant towards the second longitudinal edge of the reflector body towards the reaction chamber.

[0007] In addition to one or more of the features mentioned above, or as alternative examples, other instances may include a short constriction slot having a short constriction slot length, an elongated slot having an elongated slot length, and the short constriction slot length being between about 10% and about 60% of the elongated slot length.

[0008] In addition to one or more of the features mentioned above, or as an alternative example, other instances may include two or more short constrictions defining three or more short constrictions of unequal lengths.

[0009] In addition to one or more of the features mentioned above, or as alternative examples, other instances may include one or more elongated slots that separate two or more short constricted slots from the pyrometer port.

[0010] In addition to one or more of the features mentioned above, or as alternative examples, other instances may include one or more elongated slots that separate two or more shortened slots from the side edge of the reflector body.

[0011] In addition to one or more of the features mentioned above, or as an alternative example, other instances may include a first of two or more short constrictions that overlap longitudinally with a second of two or more short constrictions.

[0012] In addition to one or more of the features mentioned above, or as an alternative example, other instances may include a first of two or more short constrictions that is longitudinally offset from a second of two or more short constrictions.

[0013] In addition to one or more of the features mentioned above, or as an alternative example, other instances may include at least one of two or more short constrictions that overlaps longitudinally with the high-temperature gauge port.

[0014] In addition to one or more of the features mentioned above, or as alternative examples, other instances may include a first short constriction that is laterally deviated from a second short constriction.

[0015] In addition to one or more of the features mentioned above, or as an alternative example, other instances may include two or more extended grooves that extend parallel to each other and are defined by the groove surface.

[0016] In addition to one or more of the features mentioned above, or as alternative examples, other instances may include two or more of the elongated slots parallel to two or more expanding grooves.

[0017] In addition to one or more of the features mentioned above, or as an alternative example, other instances may include two or more short constrictions parallel to two or more expanding grooves.

[0018] In addition to one or more of the features mentioned above, or as an alternative example, other instances may include a reflective surface having a reflective coating.

[0019] In addition to one or more of the features mentioned above, or as alternative examples, other instances may include reflective coatings including gold.

[0020] In addition to one or more of the features mentioned above, or as alternatives, other examples may include an intermediate layer that couples the reflective coating to the reflector body.

[0021] In addition to one or more of the features mentioned above, or as alternative examples, other instances may include an intermediate layer comprising nickel.

[0022] In addition to one or more of the features mentioned above, or as an alternative example, other instances may include a first of two or more shortened slots and a second of two or more shortened slots separated by one or more of two or more expanding grooves.

[0023] In addition to one or more of the features mentioned above, or as alternative examples, other instances may include one or more of two or more short constrictions that are separated from the high-temperature gauge port by two or more expanded grooves.

[0024] In addition to one or more of the features mentioned above, or as an alternative example, other instances may include a reflective surface comprising two or more concave portions extending parallel to each other.

[0025] In addition to one or more of the features mentioned above, or as an alternative, other instances may include two or more concave portions defining a concave profile between the first and second side edges of the reflector body.

[0026] In addition to one or more of the features described above, or as an alternative example, other instances may include a first of two or more short constrictions extending through a first of two concave portions, and a second of two or more short constrictions extending through a second of two or more concave portions.

[0027] In addition to one or more of the features mentioned above, or as an alternative example, other instances may include a first of two or more short constrictions and a second of two or more short constrictions separated by one or more of two or more concave portions.

[0028] In addition to one or more of the features mentioned above, or as alternative examples, other instances may include a first pyrometer port and a second pyrometer port extending through the thickness of the reflector body defined by the groove surface and the reflector surface.

[0029] In addition to one or more of the features mentioned above, or as an alternative example, other instances may include one or more of two or more short constrictions that longitudinally overlap with the first and second pyrometer ports.

[0030] In addition to one or more of the features mentioned above, or as alternative examples, other instances may include two or more of the short constriction slots that are longitudinally offset from the second high-temperature port.

[0031] A cooling sleeve is provided. The cooling sleeve includes a top reflector, an injection-side reflector, and an exhaust-side reflector as described above. The injection-side reflector has louvered portions. The exhaust-side reflector and the injection-side reflector are substantially the same height.

[0032] In addition to one or more of the features mentioned above, or as an alternative, other examples of cooling units may include cooling units that can be arranged such that the pressure difference between the transverse top reflector and the injection end reflector is maintained at less than about 20 tors, or less than about 15 tors, or less than about 10 tors, or between about 2 tors and about 12 tors.

[0033] In addition to one or more of the features mentioned above, or as an alternative, other examples of cooling units may include a cooling unit arrangement that maintains the peak temperature of the inner surface of the top wall of the reaction chamber below about 850 degrees Celsius, or below about 800 degrees Celsius, or below about 750 degrees Celsius, or below about 700 degrees Celsius, or below about 650 degrees Celsius, or below about 600 degrees Celsius, or between about 400 degrees Celsius and about 600 degrees Celsius.

[0034] In addition to one or more of the features mentioned above, or as an alternative, other examples of cooling units may include a blower with a rating between about 100 standard cubic feet per minute (SCFM) and about 10 SCFM, or between about 80 SCFM and about 20 SCFM, or between about 60 SCFM and about 40 SCFM.

[0035] A semiconductor processing system is provided. The semiconductor processing system includes a reaction chamber, a base, a heater element, and a reflector as described above. The base is supported inside the reaction chamber. The heater element is supported above the reaction chamber. The reflector is supported above the reaction chamber and is radially coupled to the base via the reflective surface of the reflector body and the top wall of the reaction chamber.

[0036] A film deposition method is provided. The method includes receiving coolant through a top reflector supported above a reaction chamber, and allowing the coolant to flow through a plurality of elongated slots and a plurality of constricted slots extending through the top reflector. The coolant is distributed to the outside of the reaction chamber using the plurality of elongated slots and the plurality of constricted slots, and the coolant is further distributed to the outside of the reaction chamber by deflection using the plurality of constricted slots.

[0037] In addition to one or more of the features mentioned above, or as an alternative, other examples of the method may include a plurality of short constrictions that deflect coolant toward the injection end of the reaction chamber.

[0038] In addition to one or more of the features mentioned above, or as an alternative example, other method instances may include a plurality of short constrictions that deflect coolant toward the discharge end of the reaction chamber.

[0039] In addition to one or more of the features mentioned above, or as an alternative example, other method examples may include, when the deposited film further includes the current precursor flowing through the substrate, rotating the substrate relative to the precursor flowing through the substrate, and a plurality of short constrictions deflecting the coolant to the advancing portion of the substrate.

[0040] In addition to one or more of the features mentioned above, or as an alternative example, other method examples may include, as the deposited film further includes the substrate being rotated while the precursor flows through the substrate, and, relative to the precursor flowing through the substrate, a plurality of short constrictions deflect coolant toward a receding portion of the substrate.

[0041] This disclosure is provided to introduce a series of concepts in a simplified form. These concepts are further described in detail in the following examples of embodiments of this disclosure. This disclosure is not intended to identify key or essential features of the claimed subject matter, nor is it intended to limit the scope of the claimed subject matter. Simple Explanation of the Diagram

[0042] Although this specification concludes with the scope of the patent applications specifically pointed out and explicitly claimed as the rights of the embodiments disclosed herein, the advantages of the embodiments disclosed herein can be more readily apparent from the description of certain examples of the embodiments disclosed when read in conjunction with the accompanying drawings, wherein: Figure 1 is a schematic diagram of a semiconductor processing system having a reaction chamber and a cooling unit, showing the cooling unit disintegrating from the reaction chamber; Figure 2 is a block diagram of the cooling unit in Figure 1, schematically showing the top reflector, the injection end reflector, and the exhaust end reflector, as well as the bellows, according to a non-limiting example of the cooling unit; Figure 3 is a cross-sectional side view of part of the semiconductor processing system in Figure 1, showing the top reflector supported above the reaction chamber and the bellows that draw coolant through the top reflector and distribute it outside the reaction chamber; Figure 4 is a plan view of part of the semiconductor processing system in Figure 1. The system includes a reaction chamber and side reflectors, showing the injection-side reflector and the discharge-side reflector arranged on opposite sides of the reaction chamber. Figure 5 is a side view of a portion of the semiconductor processing system in Figure 1. The system includes a reaction chamber and a side reflector, showing the height of the side reflector and the louvered portion of the exhaust side reflector. Figures 6 through 8 are plan and end views of the top reflector of the cooling unit in Figure 1, based on an example, showing a recessed surface with a plurality of short narrow slots that separate the pyrometer port from the lateral sides of the reflector; Figures 9 and 10 are plan and side views of the top reflector and reaction chamber in Figure 1, based on an example, showing that the top reflector has a short narrow channel arranged to deflect the coolant flow toward the injection end of the reaction chamber; Figures 11 and 12 are plan and side views of the top reflector and reaction chamber in Figure 1, based on an example, showing that the top reflector has a short narrow channel arranged to deflect the coolant flow toward the discharge end of the reaction chamber; Figures 13 and 14 are plan and side views of the top reflector and reaction chamber in Figure 1, based on an example, showing that the top reflector has a short narrow slot arranged to deflect the coolant flow toward the substrate supported in the reaction chamber; Figures 15 and 16 are plan and side views of the top reflector and reaction chamber in Figure 1, based on an example, showing that the top reflector has a short narrow slot arranged to deflect the coolant flow toward the advancing portion of the substrate supported in the reaction chamber; Figures 17 and 18 are plan and side views of the top reflector and reaction chamber in Figure 1, based on an example, showing that the top reflector has a short narrow channel arranged to deflect the coolant flow toward the recessed portion of the substrate supported in the reaction chamber; Figure 19 is a plan view of the top reflector of Figure 1, based on an example, showing that the top reflector has a short narrow groove in a thermally matched film deposition process; and Figures 20 and 21 are block diagrams of the membrane deposition method, showing the operation of the method according to illustrative and non-limiting examples.

[0043] It should be understood that the elements in the drawings are shown for simplicity and clarity and are not necessarily drawn to scale. For example, the relative size of some elements in the drawings may be exaggerated relative to other elements to help improve the understanding of the illustrated embodiments of this disclosure. Implementation

[0044] Referring now to the accompanying drawings, similar element symbols identify similar structural features or configurations disclosed herein. For purposes of explanation and illustration, and not limitation, partial views of an example of a semiconductor processing system with a cooling assemblies according to this disclosure are shown in Figure 1 and are collectively referred to as element symbol 100. Other examples of top reflectors, cooling assemblies, and semiconductor processing systems or configurations thereof are provided in Figures 2 through 21, as will be described. The systems and methods described herein can be used to control the temperature of the inner wall surface of a reaction chamber during film deposition onto a substrate using chemical vapor deposition (CVD) techniques, for example, for thick epitaxial films in power electronic devices such as insulated gate bipolar transistor devices; however, this disclosure is generally not limited to power electronic devices or thick epitaxial films.

[0045] Referring to Figure 1, a semiconductor processing system 100 is shown. The semiconductor processing system 100 includes a reaction chamber 102, an injection flange 104, an exhaust manifold 106, and a heater element 108. The semiconductor processing system 100 also includes a first precursor source 110, one or more second precursor sources 112, a purge / carrier gas source 114, and a halide source 116. As shown and described herein, the semiconductor processing system 100 further includes a base 118, a base support member 120, a shaft 122, and a drive module 124. Although a specific arrangement of the reaction chamber 102, such as a cold-wall crossflow-type reaction chamber, is shown and described, it should be understood and appreciated that semiconductor processing systems with other reaction chamber types may also benefit from this disclosure.

[0046] The reaction chamber 102 has an injection end 126, a corresponding discharge end 128, and an interior 130. The interior 130 of the reaction chamber 102 is bounded by a top wall 132 extending between the injection end 126 and the discharge end 128, a bottom wall 134 extending below the top wall 132 and between the injection end 126 and the discharge end 128, a first sidewall 136 (shown in Figure 4) coupling the side edges of the top wall 132 to the bottom wall 134, and a laterally opposite second sidewall 138 (shown in Figure 4) coupling the opposite side edges of the top wall 132 to the bottom wall 134. In some embodiments, the reaction chamber 102 may be formed of a transparent material 140, such as glass that transmits electromagnetic radiation emitted by the heater element 108, so that the substrate 10 supported within the reaction chamber 102 can be heated by an externally disposed heater element 108 or an array of heater elements (shown in Figure 8). According to some examples, the reaction chamber 102 may be formed of quartz. According to some examples, the reaction chamber 102 may have ribs extending outward from the wall and around the reaction chamber 102 to provide structural support for the reaction chamber 102 and / or allow the interior 130 of the reaction chamber 102 to maintain a relatively low pressure relative to the external environment.

[0047] A base 118 is disposed within the interior 130 of the reaction chamber 102 and supported by a base support member 120. The base 118 is conceivably arranged along a rotation axis 144, covering the base support member 120, and fixed to rotate relative to the base support member 120. The base support member 120 is fixed to rotate relative to a shaft 122. The shaft 122 then supports rotation about the rotation axis 144, extends through the bottom wall 134 of the reaction chamber 102, and couples the base 118 and the base support member 120 to a drive module 124. The drive module 124 is operatively connected to the base 118 via the shaft 122 and the base support member 120, and is configured to rotate the base 118 about the rotation axis 144 via the shaft 122 and the base support member 120 during deposition of the film 12 to the substrate 10. In some embodiments, the substrate 10 may include a wafer, such as a semiconductor wafer. In some instances, film 12 may be an epitaxial film, such as a silicon or silicon-germanium film. It is also conceivable, in some instances, that film 12 may be a thick epitaxial film formed during the manufacture of a power electronic device (e.g., an insulated-gate bipolar transistor semiconductor device). As used herein, the term "thick" means a layer with a thickness greater than 25 micrometers, or greater than 50 micrometers, or greater than 75 micrometers, or greater than 100 micrometers, or between about 25 micrometers and about 100 micrometers.

[0048] An exhaust manifold 106 is connected to the exhaust end 128 of the reaction chamber 102 and configured to couple the reaction chamber 102 to an exhaust source, such as a scrubber. In some embodiments, the reaction chamber 102 may have an exhaust flange extending outward from and surrounding a wall of the reaction chamber 102, to which the exhaust manifold 106 may be connected. An injection flange 104 is connected to the injection end 126 of the reaction chamber 102 and couples a first precursor source 110, one or more second precursor sources 112, a purge / carrier gas source 114, and a halide source 116 to the reaction chamber 102. In some embodiments, the reaction chamber 102 may have an injection flange extending outward from and surrounding the injection end 126 of the reaction chamber 102, to which the injection flange 104 may be connected. One or more of the reaction chamber 102, the injection flange 104, and the discharge manifold 106 may be shown and described as in U.S. Patent Application Publication No. 2010 / 0116207 A1 filed by Givens et al. on November 5, 2019, the entire contents of which are incorporated herein by reference.

[0049] A first precursor source 110 is fluidly coupled to a reaction chamber 102 via an injection flange 104 and configured to provide a first precursor 146 to the reaction chamber 102. In some instances, the first precursor 146 may include a silicon-containing precursor. Suitable examples of silicon-containing precursors include silanes (SiH₄), dichlorosilanes (H₂SiCl₂), trichlorosilanes (SiHCl₃), and more advanced silane compounds, such as tetramethylsilane (Si(CH₃)₄) as a non-limiting example.

[0050] One or more second precursor sources 112 are fluidly coupled to reaction chamber 102 via injection flange 104 and configured to provide one or more second precursors 148 to reaction chamber 102. In some instances, one or more second precursors 148 may include dopants, such as precursors containing n-type and / or p-type dopants. According to some instances, one or more second precursors 148 may include germanium precursors. Suitable examples of germanium precursors include germanane (GeH4), germanium tetrafluoride (GeF4), and tributylgermanium hydride ([CH3(CH2)3]3GeH).

[0051] A purge / carrier gas source 114 is fluidly coupled to a reaction chamber 102 via an injection flange 104 and is configured to provide a purge / carrier gas 150 to the reaction chamber 102. In some instances, the purge / carrier gas 150 may include hydrogen (H2), helium (He), nitrogen (N2), argon (Ar), krypton (Kr), or mixtures thereof.

[0052] A halide source 116 is fluidly coupled to the interior 130 of reaction chamber 102 via injection flange 104 and configured to provide halide 152 to the reaction chamber. In some instances, halide 152 may comprise chlorine. In this respect, halide 152 may comprise hydrochloric acid (HCl) or chlorine (Cl₂).

[0053] The deposition of film 12 onto substrate 10 is achieved by supporting substrate 10 on base 118 within reaction chamber 102, heating substrate 10 to a predetermined film deposition temperature, rotating substrate 10 around rotation axis 144 using base 118, and allowing first precursor 146 and / or second precursor 148 to flow through substrate 10. As the first precursor 146 and / or second precursor 148 flow through substrate 10, film 12 is deposited on substrate 10 according to the temperature of substrate 10. Heating substrate 10 can be conceived as being achieved by heating elements or arrays of heating elements disposed outside reaction chamber 102, for example, heater element 108 or heater element array 174 (shown in Figure 8). In the illustrative example, heater element 108 or heater element array 174 is arranged above the top wall 132 of reaction chamber 102 and radiatively coupled to base 118 (and substrate 10) from the wall of reaction chamber 102. It is conceivable that a top reflector 202 (shown in Figure 2) supported above the heater element 108 cooperates with the heater element 108 to radiate heat to the base 118 and the substrate 10. The top reflector 202, which reflects the electromagnetic radiation emitted by the heater element 108, is positioned opposite the reaction chamber 102 and facing it. In this respect, the reaction chamber 102 may be arranged as shown and described in U.S. Patent Application Publication No. 2018 / 0363139 A1 of Rajavelu et al., the entire contents of which are incorporated herein by reference.

[0054] As those skilled in the art will understand from this disclosure, in some reaction chambers, the temperature of the inner wall surface can increase during film deposition. For example, the wall temperature may increase during film deposition due to the transmittance of the material forming the wall. The wall temperature may also increase due to the admixture deposition of the film onto the inner surface of the reaction chamber wall during the deposition of the film onto the target substrate. Furthermore, the wall temperature may be locally heated due to the flow pattern of the precursor through the interior of the reaction chamber, for example, at the boundary of the precursor flow into the narrow channel region inside the reaction chamber. Although this can generally be controlled through external cooling, excessive wall temperatures may occur during certain deposition operations, causing the wall temperature to reach the blade tip, where the transmittance material forming the wall may become devitrified, potentially leading to contamination introduction and / or reaction chamber malfunction. To limit (or eliminate) the risks of devitrification, excessive wall temperatures, and temperature variations on the inner surface of the reaction chamber 102, a cooling unit 200 is provided.

[0055] Referring to Figure 2, a cooling unit 200 is shown. The cooling unit 200 is arranged to maintain the peak temperature of the inner surface of the top wall of the reaction chamber 102 below approximately 850 degrees Celsius, or below approximately 800 degrees Celsius, or below approximately 750 degrees Celsius, or below approximately 700 degrees Celsius, or below approximately 650 degrees Celsius, or below approximately 600 degrees Celsius, or between approximately 400 degrees Celsius and approximately 600 degrees Celsius. In this respect, it includes a top reflector 202, a first injection end-side reflector 204, and a first discharge end-side reflector 206. The cooling unit 200 also includes a second injection end-side reflector 208, a second discharge end-side reflector 210, and a bellows 212. Reflectors (e.g., top reflector 202, first injection-side reflector 204, first discharge-side reflector 206, second injection-side reflector 208, and second discharge-side reflector 210) are configured to limit the resistance (i.e., static flow drop) of coolant 14 (shown in Figure 3) flowing through the exterior of reaction chamber 102 (shown in Figure 1). A bellows 212 is configured to provide a higher mass flow rate of coolant 14 through the exterior of reaction chamber 102 and across the reflectors. Top reflector 202 is further configured to distribute coolant across the top wall 132 (shown in Figure 1) of reaction chamber 102 during the deposition of film 12 (shown in Figure 1) to substrate 10 (shown in Figure 1), thereby limiting temperature variations at various points on the inner surface 176 (shown in Figure 1) of the top wall 132 of reaction chamber 102.

[0056] Referring to Figure 3, a reaction chamber 102 and a portion of the cooling assembly 200, including a top reflector 202 and a bellows 212, are shown. A base 118 is disposed within the reaction chamber 102 and is arranged to support the substrate 10 (shown in Figure 1) during the deposition of the film 12 (shown in Figure 1) to the substrate 10. A heater element 108 or an array of heater elements 174 (shown in Figure 8) is supported above the reaction chamber 102. The top reflector 202 is supported above the heater element 108 and is spaced apart from the reaction chamber 102 by the heater element 108. The bellows 212 is disposed below the reaction chamber 102 and is pneumatically connected to the reaction chamber 102 via the top reflector 202, allowing coolant 14 to flow through the outside of the reaction chamber 102.

[0057] It is conceivable that heater element 108 at least partially extends longitudinally across reaction chamber 102. In this respect, heater element 108 extends longitudinally across the top wall 132 (shown in Figure 1) between the injection end 126 and the discharge end 128 of reaction chamber 102, i.e., in the general direction of the precursor flow through reaction chamber 102 between injection flange 104 and discharge manifold 106, to radiate heat transfer to the interior 130 of reaction chamber 102. In some embodiments, heater element 108 may extend longitudinally across base 118, an outer ring 156 (shown in Figure 1) surrounding base 118, and one or more of reaction chambers 102. According to some embodiments, heater element 108 may include filaments supported within a cylindrical enclosed region, which are one of an array of cylindrical heater elements laterally spaced from each other and extending longitudinally above reaction chamber 102. Heater element 108 or heater element array 174 (shown in Figure 8) may be shown and described as in U.S. Patent No. 6,781,291, issued to Michael Halpin on August 24, 2004, the entire contents of which are incorporated herein by reference.

[0058] Referring to Figure 4, a reaction chamber 102 and a portion of a cooling jacket 200 including side reflectors (i.e., a first injection end side reflector 204, a first discharge end side reflector 206, a second injection end side reflector 208, and a second discharge end side reflector 210) are shown. The first injection end side reflector 204 and the second injection end side reflector 208 are arranged laterally opposite the injection end 126 of the reaction chamber 102. The first discharge end side reflector 206 and the second discharge end side reflector 210 are arranged laterally opposite the discharge end 128 of the reaction chamber 102, and are longitudinally offset from the first injection end side reflector 204 and the second injection end side reflector 208 relative to the overall direction of the precursor flowing through the reaction chamber 102 between the injection flange 104 and the discharge manifold 106.

[0059] The pneumatic connection of coolant 14 (shown in Figure 3) is achieved via a plurality of air chambers defined between reaction chamber 102 and bellows 212 (shown in Figure 3). In this regard, supply air chamber 162 (shown in Figure 3) is defined between bellows 212 and top reflector 202 (shown in Figure 3), top air chamber 164 is defined between top reflector 202 and reaction chamber 102, and return air chamber 166 (shown in Figure 3) is defined between reaction chamber 102 and bellows 212. On the other hand, a first side air chamber 168 is defined between reaction chamber 102 and first injection end side reflector 204 and first discharge end side reflector 206, and a second side air chamber 170 is defined between second injection end side reflector 208 and second discharge end side reflector 210. It is conceivable that the supply air chamber 162 is pneumatically coupled to the bellows 212 and the top reflector 202, the top reflector 202 is pneumatically coupled to the supply air chamber 162 and the top air chamber 164, and the top air chamber 162 is pneumatically coupled to the top reflector 202 and the top wall 132 of the reaction chamber 102. Alternatively, it is conceivable that the first side air chamber 168 is pneumatically coupled to the top air chamber 164 and the first injection end side reflector 204 and the first emission end side reflector 206; the second side air chamber 170 is pneumatically coupled to the top air chamber 164 and the second injection end side reflector 208 and the second emission end side reflector 210; the first injection end side reflector 204 and the first emission end side reflector 206 are pneumatically coupled to the first side air chamber 168 and the return air chamber 166; and the second injection end side reflector 208 and the second emission end side reflector 210 are pneumatically coupled to the second side air chamber 170 and the return air chamber 166. The air returns to chamber 166 and is then pneumatically coupled to bellows 212. As will be understood by those skilled in the art from the present disclosure, although a closed-loop cooling arrangement is shown and described herein, it should be understood and recognized that an open-loop cooling arrangement may also be used, for example, bellows 212 receiving supplemental air from an external source of coolant circuit, which is still within the scope of this disclosure.

[0060] To cool the reaction chamber 102, the bellows 212 replenishes the flow of coolant 14 supplied to the supply chamber 162 by receiving heated coolant from the return chamber 166 and / or the replenishment pipe. From the supply chamber 162, the coolant 14 flows over the top reflector 202 and through the top chamber 164 to the outer surface 178 of the top wall 132 of the reaction chamber 102, then flows across the outer surface 178 and enters the first side chamber 168 and the second side chamber 170. As the coolant 14 flows across the outer surface 178 of the top wall 132 of the reaction chamber 102, the coolant removes heat from the top wall 132, thereby cooling the inner surface 176 of the reaction chamber 102.

[0061] From the first side chamber 168, a portion of the coolant 14 passes through the first injection end reflector 204 and the first discharge end reflector 206, thereby flowing into the return chamber 166. From the second side chamber 170, another portion of the coolant 14 passes through the second injection end reflector 208 and the second discharge end reflector 210, thereby flowing into the return chamber 166. From the return chamber 166, the coolant 14 returns to the bellows 212 for recirculation throughout the exterior of the reaction chamber 102. In some embodiments, one or more heat exchangers may be arranged along the flow path of the coolant 14, for example in the piping connecting the return chamber 166 and / or the supply chamber 162, to appropriately remove (dissipate) the heat removed from the exterior of the reaction chamber 102.

[0062] As those skilled in the art will understand from this disclosure, the cooling capacity of the semiconductor processing system 100 (shown in Figure 1) depends at least in part on the flow resistance presented by the reflector of the cooling unit 200. Also as those skilled in the art will understand from this disclosure, the cooling capacity can be increased by limiting the resistance of the coolant 14 flowing through the reaction chamber 102 (e.g., by reducing the static pressure drop) and / or by increasing the mass flow rate of the coolant 14 through the reaction chamber 102. The cooling unit 200 is configured to provide enhanced cooling capacity to the reaction chamber 102 by (a) limiting the flow resistance of the coolant 14 presented by the reflector, (b) using the bellows 212 to provide a higher mass flow rate of coolant 14 through the exterior of the reaction chamber 102, and (c) reducing the temperature variation of the inner surface 176 (shown in Figure 1).

[0063] In some instances, the top reflector 202 may be spaced 172 away from the top wall 132 of the reaction chamber 102, this being selected to limit the flow resistance of the coolant 14 between the supply gas chamber 162 and the top gas chamber 164. The spacing 172 may be less than 100 mm, or less than 90 mm, or less than 80 mm, or even less than 70 mm. In some instances, the spacing 172 may be selected to cooperate with slots, such as a plurality of elongated slots 214 (shown in Figure 6) and a plurality of shortened slots (shown in Figure 6), which extend through the top reflector 202 to limit the resistance of the coolant 14 flowing through the top reflector 202. According to some instances, the spacing 172 may be between 50 mm and 150 mm, or between 70 mm and 125 mm, or between 80 mm and 100 mm. It is conceivable that such spacing can limit the static pressure drop between the supply gas chamber 162 and the top gas chamber 164 to less than about 15 torts, or less than about 10 torts, or less than about 5 torts, or between about 5 torts and about 15 torts. As will be understood by those skilled in the art from this disclosure, such spacing can also distribute the electromagnetic radiation emitted by the heating lamps throughout the top wall of the reaction chamber, thereby limiting (or eliminating) the tendency for hot spots to form on the top wall of the reaction chamber directly below individual heating lamps.

[0064] In some instances, the first injection end-side reflector 204 and / or the second injection end-side reflector 208 may be configured to limit resistance to the flow of coolant between the first side chamber 168 and / or the second side chamber 170 and the return chamber 166. In this regard, either or both of the first injection end-side reflector 204 and the second injection end-side reflector 208 may have a planar body, such as a planar body 218. As those skilled in the art will understand from this disclosure, employing a planar body can promote laminar flow of coolant 14 along the planar body 218 by limiting (or eliminating) the tendency for stagnant flow along the plate. On the other hand, either or both of the first injection end-side reflector 204 and the second injection end-side reflector 208 may have a height, such as a height 220, which is less than the height of the first sidewall 136 of the reaction chamber 102. As will be understood by those skilled in the art from this disclosure, limiting the height of the first injection end reflector 204 and / or the second injection end reflector 208 can limit the resistance presented to the coolant 14 when the coolant 14 flows between the first side chamber 168 and the return chamber 166.

[0065] In some instances, the first injection end-side reflector 204 and / or the second injection end-side reflector 208 may have louvered portions, such as louvered portion 222. In such instances, louvered portion 222 may have a plurality of louvers 224 configured to provide fluid communication between the first side air chamber 168 and the return air chamber 166, while limiting the reduction of reflectivity of the first injection end-side reflector 204 (if any). In some instances, louvered portion 222 may define an array of louvers comprising 4 louvers, or 6 louvers, or 8 louvers, or more than 10 louvers, or between 4 and 10 louvers. According to some instances, each louver 224 may have a length greater than 40 mm, or greater than 60 mm, or greater than 80 mm, or greater than 100 mm, or between 40 mm and 100 mm. Each 100 louvers 224 may have a vertical height greater than 3 mm, or greater than 5 mm, or greater than 7 mm, or greater than 9 mm, or between about 3 mm and about 9 mm. As will be understood by those skilled in the art from this disclosure, the louvers 224 of the louver portion 222 can reduce the resistance of the coolant 14 flowing from the first side chamber 168 and / or the second side chamber 170 to the return chamber 166 without limiting the reflectivity of the first injection end side reflector 204 and / or the second injection end side reflector 108.

[0066] In some instances, the first discharge end-side reflector 206 and / or the second discharge end-side reflector 210 may have a height, for example, height 226, which is less than the vertical height of the first sidewall 136 of the reaction chamber 102. According to some instances, height 226 may be substantially equal to the height 220 of the first injection end-side reflector 204. As described above, limiting the height of the first injection end-side reflector 204 and / or the second injection end-side reflector 208 can limit the resistance to the flow of coolant 14 from the first side chamber 168 and / or the second side chamber 170 to the return chamber 166. For example, the static pressure drop between the first side chamber 168 and / or the second side chamber 170 and the return chamber 166 may be less than about 7 torr, or less than about 5 torr, or less than about 3 torr, or between about 7 torr and about 3 torr. The pressure drop may be about 6 torr. As those skilled in the art will understand from this disclosure, pressure drops within these ranges can increase the coolant velocity, thereby improving reaction chamber cooling.

[0067] In some instances, bellows 212 may be configured to increase the mass flow rate of coolant 14 across the exterior of reaction chamber 102. Bellows 212 may be further configured to cooperate with slots extending through top reflector 202, such as a plurality of elongated slots 214 (shown in Figure 6) and a plurality of shortened slots 216 (shown in Figure 6), to distribute coolant 14 across the outer surface 178 of the top wall 132 of reaction chamber 102 to limit temperature variations on the inner surface 176 of reaction chamber 102. For example, bellows 212 may have ratings greater than about 10 standard cubic feet per minute (SCFM), or greater than about 40 standard cubic feet per minute, or greater than about 60 standard cubic feet per minute, or greater than about 100 standard cubic feet per minute, or between about 10 and about 100 standard cubic feet per minute. Regarding coolant distribution, a bellows with these rated values ​​can cooperate with slots extending through the top reflector 202, such as a plurality of elongated slots 214 and a plurality of shortened slots 216, to effectively cool the top wall 132 of the reaction chamber 102, such that the temperature of the inner surface 176 of the top wall 132 is approximately 10 degrees Celsius to approximately 65 degrees Celsius cooler than during nominal film deposition, or between approximately 30 degrees Celsius and approximately 55 degrees Celsius, or even between approximately 35 degrees Celsius and approximately 50 degrees Celsius. In some instances, the inner surface 176 may be approximately 40 degrees Celsius cooler than during nominal film deposition. As those skilled in the art will understand from this disclosure, such temperature reductions within these ranges can limit (or eliminate) the risk of devitrification of the quartz forming the reaction chamber during long-term deposition operations, allowing the reaction chamber to be used for depositing thick epitaxial layers onto a substrate.

[0068] Referring to Figures 6 through 8, a top reflector 202 according to an example is shown. As shown in Figure 6, the top reflector 202 is configured to overlap with the reaction chamber 102 (shown in Figure 1) and includes a reflector body 228. The reflector body 228 has a first longitudinal edge 230, a second longitudinal edge 232, a first side edge 234, a second side edge 236, a recessed surface 238, and a reflective surface 240. The first longitudinal edge 230 and the second longitudinal edge 232 are located at opposite longitudinal ends of the reflector body 228 and are spaced apart from each other by the longitudinal length of the reflector body 228. The first side edge 234 and the second side edge 236 connect the first longitudinal edge 230 and the second longitudinal edge 232 and are spaced apart from each other by the lateral width of the reflector body 228. It is conceivable that when the top reflector 202 is supported above the reaction chamber 102, the first longitudinal edge 230 covers the injection end 126 (shown in Figure 1) of the reaction chamber 102 (shown in Figure 1), and the second longitudinal edge 232 covers the discharge end 128 (shown in Figure 1) of the reaction chamber 102. It is also conceivable that when the top reflector 202 is supported above the reaction chamber 102, the heater element 108 (shown in Figure 1) is supported between the reaction chamber 102 and the top reflector 202, and the heater element 108 extends longitudinally between the first longitudinal edge 230 and the second longitudinal edge 232.

[0069] The recessed surface 238 of the reflector body 228 is longitudinally defined by the first longitudinal edge 230 and the second longitudinal edge 232 of the reflector body 228, and laterally defined by the first side edge 234 and the second side edge 236 of the reflector body 228. A pyrometer port 242 and a plurality of extended recesses 244 are defined within it. The pyrometer port 242 extends through the thickness 246 of the reflector body 228 (shown in Figure 7) and is configured to optically couple a pyrometer 158 (shown in Figure 1) to the reaction chamber 102 (shown in Figure 1). As will be understood by those skilled in the art from this disclosure, the optically coupled pyrometer 158 allows the pyrometer 158 to report the temperature of the reaction chamber 102, the base 118 (shown in Figure 1), and / or the substrate 10 (shown in Figure 1) supported on the base 118. During the deposition of the film 12 (shown in Figure 1) to the substrate 10, the reported temperature can then be used to control the temperature inside the reaction chamber 102 and / or the temperature of the walls of the reaction chamber 102.

[0070] In some instances, pyrometer port 242 may be a first pyrometer port 242, and the recessed surface 238 may define one or more second pyrometer ports 248 therein. In such instances, one or more second pyrometer ports 248 may resemble the first pyrometer port 242 and be further configured to optically couple one or more second pyrometers to the reaction chamber 102, such as a second pyrometer 160 (shown in Figure 1). The second pyrometer ports 248 may be longitudinally offset from the first pyrometer port 242. One or more of a plurality of shorted slots 216 may separate one or more second pyrometer ports 248 from the first pyrometer port 242. As will be understood by those skilled in the art from this disclosure, instances of top reflectors 202 having one or more second pyrometer ports allow monitoring of the temperature of the reaction chamber 102 at one or more second locations, improving the ability to control the temperature of the substrate 10 (shown in Figure 1) and the reaction chamber 102 during the deposition of the film 12 (shown in Figure 1) to the substrate 10. Although shown to have three pyrometer ports, it should be understood and clear that instances of reflector body 228 may have fewer or more than three pyrometer ports, which is still within the scope of this disclosure.

[0071] A plurality of extended grooves 244 are defined within a groove surface 238 of the reflector body 228 and are configured to limit deformation of the reflector body 228 due to heating. In this respect, the plurality of extended grooves 244 partially extend through the thickness 246 of the reflector body 228 (shown in Figure 7). On the other hand, it is conceivable that the plurality of extended grooves 244 separate the pyrometer port 242 from the first side edge 234 and the second side edge 236, are equally spaced between the first side edge 234 and the second side edge 236 of the reactor body 228, and extend between the first longitudinal edge 230 and the second longitudinal edge 232 of the reactor body 228. In some instances, the plurality of extended grooves 244 may extend parallel to each other. According to some embodiments, the plurality of extended grooves 244 may be substantially orthogonal to either (or both) the first longitudinal edge 230 and the second longitudinal edge 232. It is also conceivable that, according to certain embodiments, a plurality of expanded grooves 244 may be substantially parallel to either (or both) the first side edge 234 and the second side edge 236. Although shown as having eleven (11) expanded grooves 244, it should be understood and appreciated that instances of the reflector body 228 may have fewer or more than eleven (11) expanded grooves, which is still within the scope of this disclosure.

[0072] As shown in Figure 7, the reflective surface 240 is defined longitudinally by the first longitudinal edge 230 and the second longitudinal edge 232 of the reflector body 228, and laterally by the first side edge 234 and the second side edge 236 of the reflector body 228. It is conceivable that a plurality of elongated slots 214 and a plurality of shortened slots 216 are defined on the reflective surface 240, and the reflective surface 240 has a reflectivity 250 greater than the reflectivity 252 of the groove surface 238. The plurality of elongated slots 214 and the plurality of shortened slots 216 fluidly couple the groove surface 238 to the reflective surface 240 of the reflector body 228. Based on the arrangement of a plurality of elongated slots 214 and a plurality of shortened slots 216, the groove surface 238 and the reflective surface 240 of the fluid coupling allow coolant 14 (shown in Figure 3) to flow from the supply gas chamber 162 (shown in Figure 3) to the top gas chamber 162 (shown in Figure 3) and to the outer surface 178 (shown in Figure 1) of the top wall 132 (shown in Figure 1) of the reaction chamber 102 (shown in Figure 1).

[0073] In some instances, the reflective surface 240 may include a reflective layer 254, such as a gold-containing layer. According to some instances, an intermediate layer 256 may couple the reflective layer 254 to the reflector body 228. Suitable examples of intermediate coatings include nickel and nickel-containing materials. As those skilled in the art will understand from this disclosure, the reflective layer (e.g., gold) allows the reflective surface 240 to reflect electromagnetic radiation emitted by the heater element 108 toward the reaction chamber 102 (shown in Figure 1), thereby increasing the amount of heat radiated into the reaction chamber 102 per unit power applied to the heater element 108. As those skilled in the art will understand from this disclosure, the use of an intermediate layer can adjust for thermal expansion mismatch between the material forming the reflector body 228 and the reflective layer 254.

[0074] As shown in Figure 8, the reflective surface 240 may have a plurality of concave portions 258. In such examples, the plurality of concave portions 258 may extend between a first longitudinal edge 230 (shown in Figure 6) and a second longitudinal edge 232 (shown in Figure 6) of the reflector body 228. More specifically, the plurality of concave portions 258 may define a concave profile 260 between a first side edge 234 and a second side edge 236 of the reflector body 228, and a plurality of elongated slots 214 and a plurality of shortened slots 216 may be defined in the plurality of concave portions 258. In some examples, the plurality of concave portions 258 may extend parallel to each other between the first longitudinal edge 230 and the second longitudinal edge 232 of the reflector body 228. According to some examples, the plurality of concave portions 258 may be substantially orthogonal to either (or both) the first longitudinal edge 230 and the second longitudinal edge 232. It is also conceivable that a plurality of concave portions 258 may extend parallel to either (or both) the first side edge 234 and the second side edge 236.

[0075] Referring again to Figure 6, a plurality of elongated slots 214 extend between the first longitudinal edge 230 and the second longitudinal edge 232 of the reflector body 228. In some embodiments, the plurality of elongated slots 214 may extend parallel to each other. According to some embodiments, the plurality of elongated slots 214 may extend parallel to a plurality of extended grooves 244. In other embodiments, the plurality of elongated slots 214 may be orthogonal to either (or both) the first longitudinal edge 230 and the second longitudinal edge 232 of the reflector body 228. It is conceivable that the plurality of elongated slots 214 may extend parallel to either (or both) the first side edge 234 and the second side edge 236 of the reflector body 228. It is also conceivable, according to some embodiments, that each of the plurality of elongated slots 214 may have a longitudinal length greater than that of the plurality of shortened slots 216. In this respect, the length of each of the plurality of elongated slots 214 may be shorter than the length of the plurality of expanded grooves 244.

[0076] In some instances, one or more of the plurality of elongated slots 214 separate the pyrometer port 242 from the first side edge 234. One or more of the plurality of elongated slots 214 separate the pyrometer port 242 from the second side edge 236. According to some instances, the plurality of elongated slots 214 may be smaller than the plurality of shortened slots 216. In other instances, one or more of the plurality of elongated slots 214 separate the plurality of shortened slots 216 from the pyrometer port 242. It is also conceivable that, according to some instances, at least one of the plurality of elongated slots 214 separates the plurality of shortened slots 216 from either the first side edge 234 or the second side edge 236. Although a specific number of elongated slots 214 are shown in the illustrative examples, it should be understood and appreciated that instances of the top reflector 202 may have fewer or more elongated slots 214, which remains within the scope of this disclosure.

[0077] A plurality of shortened slots 216 extend between a first longitudinal edge 230 and a second longitudinal edge 232 of the reflector body 228. In this respect, the plurality of shortened slots 216 may be orthogonal to either (or both) the first longitudinal edge 230 and the second longitudinal edge 232 of the reflector body 228. The plurality of shortened slots 216 may be parallel to either (or both) the first side edge 234 and the second side edge 236 of the reflector body 228. The plurality of shortened slots 216 may be parallel to a plurality of expanded grooves 268. It is also conceivable that the plurality of shortened slots 216 may be parallel to a plurality of concave portions 258 defined by the reflective surface 240 of the reflector body 228.

[0078] It is conceivable that a plurality of shortened slots 216 each have a longitudinal length smaller than that of a plurality of elongated slots 214. In this respect, the longitudinal length of the plurality of shortened slots 216 may be less than 90%, or less than 70%, or less than 50%, or less than 30%, or even less than 10% of the length of the plurality of elongated slots 214. In some instances, the plurality of shortened slots 216 may comprise two or more shortened slots with different longitudinal lengths. It is conceivable that the plurality of shortened slots 216 are larger than the plurality of elongated slots 214. It is also conceivable that a plurality of short constrictions are distributed on the reflector body 228 to limit the temperature range of the inner surface 176 (shown in Figure 1) of the top wall 132 (shown in Figure 1) of the reaction chamber 102. For example, one or more of the plurality of short constrictions 216 may be distributed to a local area that exhibits a higher temperature than the rest of the inner surface 176 of the top wall 132 of the reaction chamber 102 in the absence of coolant 14 being delivered through at least one of the registered short constrictions 216. As those skilled in the art will understand from this disclosure, dispensing coolant 14 through at least one of the short constrictions 216 onto the outer surface 178 of the top wall 132 can limit the tendency for film deposition there, thereby limiting (or eliminating) the risk of depermeability there. As will be understood by those skilled in the art from this disclosure, dispensing coolant 14 to the outer surface 178 of the top wall 132 via at least one of the plurality of short constriction slots 216 can also eliminate the need to reduce the peak temperature of the inner surface 176 of the top wall 132 of the reaction chamber 102, thereby reducing the average temperature of the inner surface 176 and thus improving the cooling capacity of the semiconductor processing system 100.

[0079] Referring to Figures 9 and 10, a top reflector 302 according to another embodiment is shown. The top reflector 302 is similar to the top reflector 202 (shown in Figure 2), and is further configured to deflect the coolant 14 toward the first longitudinal edge 230 of the reflector body 228 and thereby toward the injection end 126 of the reaction chamber 102. In this respect, the top reflector 302 has a plurality of shortened slots 304. The plurality of shortened slots 304 are longitudinally located between the pyrometer port 242 and the first longitudinal edge 230 of the reflector body 228. More specifically, the plurality of shortened slots 304 are longitudinally located between the pyrometer port 242 and the first longitudinal edge 230 of the reflector body 228, and further laterally separate the pyrometer port 242 from one or more of the first side edge 234 and the second side edge 236. In some instances, the plurality of short constrictions 304 and the pyrometer port 242 may be laterally separated by one or more of a plurality of extended grooves 244 (shown in Figure 6). According to some instances, the plurality of short constrictions 304 and the pyrometer port 242 may be laterally separated by one or more of a plurality of elongated slots 214. With this arrangement, the plurality of short constrictions 304 deflect the coolant 14 at the injection end 126 of the reaction chamber 102 toward the outer surface 178 of the top wall 132 of the reaction chamber 102. As those skilled in the art will understand from this disclosure, this serves to reduce the temperature range of the inner surface 176 of the top wall 132 of the reaction chamber 102 during deposition operations, otherwise the injection end 126 of the reaction chamber 102 would become hotter than the rest of the reaction chamber 102.

[0080] Referring to Figures 11 and 12, a top reflector 402 according to yet another example is shown. The top reflector 402 is similar to the top reflector 202 (shown in Figure 2), and is further configured to deflect the coolant 14 toward the second longitudinal edge 232 of the reflector body 228. In this respect, the top reflector 402 has a plurality of short constrictions 404. The plurality of short constrictions 404 are longitudinally located between the pyrometer port 242 and the second longitudinal edge 232 of the reflector body 228. More specifically, the plurality of short constrictions 404 are located between the pyrometer port 242 and the second longitudinal edge 232, and are laterally separated between the pyrometer port 242 and one or more of the first side edge 234 and the second side edge 236. In some embodiments, the plurality of short constrictions 404 and the pyrometer port 242 may be laterally separated by one or more of the plurality of expanding grooves 244. According to some examples, a plurality of short constrictions 404 and the high-temperature port 242 may be laterally separated by one or more of a plurality of elongated slots 214. In this arrangement, the plurality of short constrictions 404 deflect the coolant 14 at the discharge end 128 of the reaction chamber 102 toward the outer surface 178 of the top wall 132 (shown in Figure 1) of the reaction chamber 102. As those skilled in the art will understand from this disclosure, this serves to reduce the temperature range of the inner surface 176 of the top wall 132 of the reaction chamber 102 during deposition operations, otherwise the discharge end 128 of the reaction chamber 102 would become hotter than the rest of the reaction chamber 102.

[0081] Referring to Figures 13 and 14, a top reflector 502 according to another embodiment is shown. The top reflector 502 is similar to the top reflector 202, and is further configured to deflect the coolant 14 towards the middle portion of the top wall 132 (shown in Figure 1) covering the base 118 (shown in Figure 1). In this respect, the top reflector 502 has a plurality of short constrictions 504, which are concentratedly distributed between the first longitudinal edge 230 and the second longitudinal edge 232 of the reflector body 228. More specifically, one or more of the short constrictions 504 longitudinally overlap with the pyrometer port 242 and laterally separate the pyrometer port 242 from the first side edge 234 of the reflector body 228, and one or more of the short constrictions 504 longitudinally overlap with the pyrometer port 242 and laterally separate the pyrometer port 242 from the second side edge 236 of the reflector body 228. In this configuration, a plurality of short, narrow channels 504 are positioned midway between the injection end 126 and the discharge end 128 of the reaction chamber 102, deflecting and distributing coolant 14 onto the inner surface 178 of the top wall 132 (shown in Figure 1) of the reaction chamber 102, above the base 118. As those skilled in the art will understand from this disclosure, this serves to reduce the temperature range of the inner surface 176 of the top wall 132 of the reaction chamber 102 during deposition operations, otherwise a certain area of ​​the inner surface 176 of the top wall 132 would become hotter than other locations on the inner surface 176 of the top wall 132 of the reaction chamber 102.

[0082] Referring to Figures 15 and 16, a top reflector 602 according to another embodiment is shown. The top reflector 602 is similar to the top reflector 202, and is further configured to deflect the coolant 14 towards the forward portion of the base 118 (relative to the general direction of precursor flow) during rotation about the axis of rotation 144 (shown in Figure 1). In this respect, the top reflector 602 has a plurality of shortened slots 604. The plurality of shortened slots 604 are laterally located between the pyrometer port 242 and the first side edge 234 of the reflector body 228, and longitudinally overlap with the pyrometer port 242. In some embodiments, the plurality of shortened slots 604 may be laterally distributed between the pyrometer port 242 and the first side edge 234 and between the pyrometer port 242 and the second side edge 236. In such examples, a greater number of the plurality of short constrictions 604 are located between the high-temperature port 242 and the first side edge 234 of the reflector body 228 than between the high-temperature port 242 and the second side edge 236 of the reflector body 228. This arrangement causes the plurality of short constrictions 604 to deflect and dispense coolant 14 towards the outer surface 178 of the top wall 132 (shown in Figure 1) of the reaction chamber 102 and towards a portion of the top wall of the cover base 118 and / or the substrate 10 (shown in Figure 1). As those skilled in the art will understand from this disclosure, this reduces the temperature range of the inner surface 176 of the top wall 132 of the reaction chamber 102 during deposition operations, where the flow pattern causes the temperature of a portion of the inner surface 176 of the top wall 132 of the reaction chamber 102 to differ from that of a portion of the inner surface 176 of the top wall 132 of the cover base 118.

[0083] Referring to Figures 17 and 18, a top reflector 702 according to another embodiment is shown. The top reflector 702 is similar to the top reflector 202, and is further configured to deflect the coolant 14 towards the rearward portion of the base 118 (relative to the general direction of precursor flow) during rotation about the axis of rotation 144. In this respect, the top reflector 702 has a plurality of shortened slots 704. The plurality of shortened slots 704 are laterally located between the pyrometer port 242 and the second side edge 236 of the reflector body 228, and longitudinally overlap with the pyrometer port 242. In some embodiments, the plurality of shortened slots 704 may be laterally distributed between the pyrometer port 242 and the first side edge 234, and between the pyrometer port 242 and the second side edge 236. In such examples, a greater number of the plurality of short constrictions 704 are located between the high-temperature port 242 and the second side edge 236 of the reflector body 228 than between the high-temperature port 242 and the second side edge 236 of the reflector body 228. This arrangement causes the plurality of short constrictions 704 to deflect the coolant 14 towards the outer surface 178 of the top wall 132 of the reaction chamber 102 (shown in Figure 1) and towards a portion of the top wall of the retracted portion of the cover base 118 and / or the substrate 10 (shown in Figure 1). As those skilled in the art will understand from this disclosure, this reduces the temperature range of the inner surface 176 of the top wall 132 of the reaction chamber 102 during deposition operations, where the flow pattern causes a portion of the inner surface 176 of the top wall 132 of the reaction chamber 102 to be more sensitive than the portion of the inner surface 176 of the top wall 132 of the forward portion of the cover base 118.

[0084] Referring to Figure 19, a top reflector 802 is shown. The top reflector 802 is similar to the top reflector 202 (shown in Figure 2) and further has a plurality of shortened slots 804 configured to distribute coolant 14 to various locations on the outer surface 178 (shown in Figure 1) of the reaction chamber 102 (shown in Figure 1) according to the heating conditions of the inner surface 176 (shown in Figure 1) of the reaction chamber 102 (shown in Figure 1). In this respect, the plurality of shortened slots 804 are larger than each of the plurality of elongated slots 214, and the plurality of shortened slots 804 have a length between 10% and 60% of the length of each of the elongated slots 214. More specifically, the plurality of shortened slots 804 defines three or more (e.g., seven) shortened slot lengths. As shown in Figure 19, the plurality of short constricted slots 216 include a first short constricted slot 806 (which is about 50% of the length of each of the plurality of elongated slots 214), a second short constricted slot 808 and a third short constricted slot 810 (which is about 60% of the length of each of the plurality of elongated slots 214), a fourth short constricted slot 812 (which is about 20% of the length of each of the plurality of elongated slots 214), a fifth short constricted slot 814 (which is about 30% of the length of each of the plurality of elongated slots 214), a sixth short constricted slot 816 (which is about 10% of the length of each of the plurality of elongated slots 214) and a seventh short constricted slot 818 (which is about 50% of the length of each of the plurality of elongated slots 214). Although a specific number of short constrictions and short constriction lengths are shown, it should be understood and apparent that instances of the top reflector 802 may have different numbers of short constrictions and / or short constriction lengths, which is still within the scope of this disclosure.

[0085] It is conceivable that one or more of the plurality of elongated slots 214 can separate the plurality of shortened slots from the pyrometer port 242. In this respect, the first elongated slot 820 separates the first shortened slot 806 and the second shortened slot 808 from the pyrometer port 242, and the second elongated slot 822 separates the sixth shortened slot 816 and the seventh shortened slot 818 from the pyrometer port 242. It is also conceivable that one or more of the plurality of elongated slots 214 can separate the plurality of shortened slots from the side edge of the reflector body 228. The first elongated slot 820 separates the sixth shortened slot 816 and the seventh shortened slot 818 from the first side edge 234, and the second elongated slot 822 separates the first shortened slot 806 and the second shortened slot 808 from the second side edge 236.

[0086] In some instances, a first of a plurality of shortened slots 804 may longitudinally overlap with a second of a plurality of shortened slots 804. In this respect, a second shortened slot 808 longitudinally overlaps with a first shortened slot 806, and a fourth shortened slot 812 longitudinally overlaps with a third shortened slot 810. According to some instances, a first of a plurality of shortened slots 804 may longitudinally deviate from a second of a plurality of shortened slots 804. In this respect, a third shortened slot 810 longitudinally deviates from a first shortened slot 806, a fourth shortened slot 812 longitudinally deviates from a fifth shortened slot 814, and a sixth shortened slot 816 longitudinally deviates from a seventh shortened slot 818. In other instances, one or more of the plurality of shortened slots 804 may longitudinally overlap with a pyrometer port 242. In this respect, in the illustrative example, the second short constriction slot 808, the third short constriction slot 810 and the sixth short constriction slot 816 overlap longitudinally with the high temperature gauge port 242.

[0087] According to certain examples, a first of a plurality of shortened slots 804 may be laterally offset from a second of a plurality of shortened slots 804. In this respect, a second shortened slot 808 is laterally offset from a first shortened slot 806, a third shortened slot is laterally offset from a second shortened slot 808, and a fourth shortened slot 812 and a fifth shortened slot 814 are both laterally offset from a third shortened slot 810. On the other hand, a sixth shortened slot 816 is laterally offset from the fourth shortened slot 812 and the fifth shortened slot 814, and a seventh shortened slot 818 is laterally offset from the sixth shortened slot 816. In other instances, a first of a plurality of shortened slots 804 and a second of a plurality of shortened slots 804 may be separated by one or more of a plurality of expanded grooves 244, and one or more of the plurality of shortened slots 804 may be separated from the pyrometer port 242 by one or more of the plurality of expanded grooves 244. In this respect, a first expanded groove 826 separates a first shortened slot 806 from a third shortened slot 810, and further separates a first shortened slot 806 from the pyrometer port 242.

[0088] Referring to Figures 20 and 21, a film deposition method 900 according to an illustrative and non-limiting example is shown. As shown in Figure 19, method 900 includes depositing a film onto a substrate supported within a reaction chamber, for example, depositing film 12 (shown in Figure 1) onto substrate 10 (shown in Figure 1) supported within reaction chamber 102 (shown in Figure 1), as indicated by bracket 910. Method 900 also includes cooling the exterior of the reaction chamber during film deposition onto the substrate, for example, cooling the outer surface 178 of reaction chamber 102 (shown in Figure 1), as indicated by bracket 920.

[0089] As shown in block 912, depositing the film onto the substrate includes allowing at least one precursor (e.g., first precursor 146 (shown in Figure 1)) to flow through the substrate while the substrate is supported in the reaction chamber. In some instances, the at least one precursor may be a silicon-containing precursor. According to some instances, the at least one precursor may include germanium. In other instances, the at least one precursor may include a dopant, such as a p-type dopant or an n-type dopant. It is also conceivable that the precursor may be an exothermic precursor such as trichlorosilane, and in some instances, the temperature in the reaction chamber is between about 900 degrees Celsius and about 1200 degrees Celsius.

[0090] As shown in block 914, depositing a film onto a substrate includes depositing a film onto the substrate as the current flow spreads across the substrate. In some instances, the film may be an epitaxial film. According to some instances, the film may be a film for power electronic devices, such as insulated-gate bipolar transistor devices. In other instances, the film may be a thicker film. In this respect, the film may have a thickness greater than 0.1 micrometer, or greater than 0.25 micrometer, or greater than 0.5 micrometer, or greater than 0.75 micrometer, or even greater than 1.0 micrometer. The film may have a thickness between about 0.1 micrometer and about 1.0 micrometer.

[0091] As shown in block 916, the deposition of the film includes heating the reaction chamber during the deposition of the film onto the substrate. For example, heating the reaction chamber may include using heat from one or more exothermic precursors flowing through the substrate. Heating the reaction chamber may include heating the substrate by radiating heat from external heater elements into the reaction chamber, such as heater element 108 (shown in Figure 1) and / or heater element array 174 (shown in Figure 8). In such examples, the heater elements and / or heater element array may heat the reaction chamber walls according to the transmittance of the reaction chamber walls. It is also conceivable that the reaction chamber may be heated (at least partially) by one or more reflectors arranged outside the reaction chamber and radiatively coupled to the heater elements in the reaction chamber, such as top reflector 202 (shown in Figure 2) and one or more side reflectors 204 to 210 (shown in Figure 2).

[0092] As shown in Figure 21, depositing a film onto a substrate can conceive of rotating the substrate relative to the general direction of the precursor within the reaction chamber, as shown in block 918. In some instances, the substrate may be supported on a base within the reaction chamber, such as base 118 (shown in Figure 1). The base may rotate about an axis of rotation, for example, about axis 144 (shown in Figure 1). The axis of rotation is substantially orthogonal to the general direction of flow through the reaction chamber between the injector and the drain manifold at opposite ends of the reaction chamber, for example, injection flange 104 (shown in Figure 1) and drain manifold 106 (shown in Figure 1). Rotation of the substrate and base about the axis of rotation may result in uneven heating of the inner surface of the reaction chamber due to the lateral traversal of the fluid across the relatively forward and backward portions and the relative acceleration and deceleration of the substrate and base.

[0093] Referring again to Figure 20, the cooling reaction chamber may include a top reflector for receiving coolant, such as coolant 14 (shown in Figure 3), as shown in block 922. It is conceivable that the coolant flows through a plurality of elongated slots and a plurality of constricted slots extending through the top reflector, as shown in block 924, which distribute the coolant to (e.g., throughout) the outer surface of the reaction chamber, such as the outer surface 178 of the reaction chamber (shown in Figure 1), as shown in block 926. In this respect, the cooling reaction chamber may include the use of a plurality of constricted slots to deflect and distribute the coolant throughout the exterior of the reaction chamber, as shown in block 930.

[0094] As shown in Figure 21, deflecting coolant distribution may include deflecting coolant towards the injection end of the reaction chamber, as shown in block 932. For example, a plurality of short constrictions may be used to deliver a greater mass flow rate of coolant to the outer surface of the reaction chamber top wall at the injection end of the reaction chamber than to the outer surface of the reaction chamber top wall at the discharge end of the reaction chamber. In some instances, the mass flow rate of coolant may be laterally and uniformly distributed across the outer surface of the reaction chamber top wall at the injection end. According to some instances, the mass flow rate of coolant may be non-uniformly distributed across the outer surface of the reaction chamber top wall at the injection end.

[0095] As shown in block 934, deflecting coolant distribution may include deflecting coolant towards the discharge end of the reaction chamber. For example, a plurality of short constrictions may be used to deliver a greater mass flow rate of coolant to the outer surface of the reaction chamber top wall at the discharge end than to the outer surface of the reaction chamber top wall at the injection end. In some instances, the mass flow rate of coolant may be laterally and uniformly distributed across the outer surface of the top wall at the discharge end of the reaction chamber. According to some instances, the mass flow rate of coolant may be non-uniformly distributed across the outer surface of the top wall at the discharge end of the reaction chamber.

[0096] As shown in block 936, the deflection distribution of coolant may include deflecting the coolant towards the advancing portion of the substrate and the base relative to the direction of flow through the reaction chamber. In this respect, a plurality of short constriction slots can be used to deliver a greater mass flow rate of coolant to the outer surface of the top wall of the reaction chamber and to the advancing portion of the substrate and the base within the reaction chamber, rather than to the reaction chamber side thereof. In some embodiments, the mass flow rate of the coolant may be longitudinally and uniformly distributed across the outer surface of the top wall and to the reaction chamber side thereof. According to some embodiments, the mass flow rate of the coolant may be non-uniformly distributed across the outer surface of the top wall and to the reaction chamber side thereof.

[0097] As shown in block 938, the deflection distribution of coolant may include deflecting the coolant toward the receding portion of the substrate and the base relative to the direction of flow through the reaction chamber. In this respect, a plurality of short constriction slots can be used to deliver a greater mass flow rate of coolant to the outer surface of the top wall of the reaction chamber and to the reaction chamber side of the base within the reaction chamber, rather than to the outer surface of the top wall of the reaction chamber and to the receding portion of the substrate within the reaction chamber. In some embodiments, the mass flow rate of the coolant may be longitudinally and uniformly distributed across the outer surface of the top wall and to the reaction chamber side of the receding portion of the substrate within the reaction chamber. According to some embodiments, the mass flow rate of the coolant may be non-uniformly distributed across the outer surface of the top wall and to the reaction chamber side of the receding portion of the substrate within the reaction chamber.

[0098] The examples presented above do not limit the scope of this disclosure, as these examples merely illustrate the disclosure as defined by the appended claims and legal equivalents. Any equivalent embodiments are intended to be within the scope of this disclosure. In fact, in addition to what is shown and described herein, various modifications to this disclosure, such as alternative combinations of described elements, will be apparent to those skilled in the art from this specification. Such modifications and embodiments are also intended to fall within the scope of the appended claims.

[0099] The terminology used herein is for the purpose of describing specific instances only and is not intended to limit the scope of the claims. Unless the context clearly indicates otherwise, the singular forms "a / an" and "the" as used herein are intended to include the plural forms as well. It is to be further understood that, when used in this specification, the terms "includes / including," "has / having," and / or "comprises / comprising" indicate the presence of stated features, integers, steps, operations, elements, and / or components (ingredients), but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components (ingredients), and / or groups thereof.

[0100] 10:Substrate 12: Membrane 14: Coolant 100: Semiconductor Processing System 102: Reaction Chamber 104: Injection flange 106: Emission Manifold 108: Heater element 110: First precursor material source 112: Second precursor source 114: Purge / Carrier Gas Source 116: Halogen source 118: Base 120: Base support component 122: Shaft 124: Drive Module 126: Injection end 128: Emission end 130: Internal 132: Top Wall 134: Bottom wall 136: First sidewall 138: Second sidewall 140: Transparent materials 144: Rotation axis 146: The First Precursor 148: Second Precursor 150: Purge / Carrier Gas 152: Halides 156: Outer Ring Road 158: Pyrometer 160: Second pyrometer 162: Supply Gas Chamber 164: Top chamber 166: Return to air chamber 168: First side air chamber 170: Second side chamber 172: Interval distance 174: Heater element array 176: Inner surface 178: Outer surface 200: Cooling Kit 202: Top reflector 204: First injection end side reflector 206: First emission end side reflector 208: Second injection end side reflector 210: Second emission end side reflector 212: Bellows 214: Slender slot 216: Short narrow groove 218: Planar Main Body 220, 226: Altitude 222: Louver section 224: Baiye 228: Reflector body 230: First Vertical Edge 232: Second longitudinal edge 234: First lateral edge 236: Second lateral edge 238: Groove surface 240: Reflective surface 242: High Temperature Gauge Port 244: Expanded Groove 246: Thickness 248: Second High Temperature Gauge Port 250, 252: Reflectivity 254: Reflective layer 256: Intermediate Layer 258: Concave portion 260: Concave profile 302: Top reflector 304: Short narrow groove 402: Top reflector 404: Short narrow groove 502: Top reflector 504: Short narrow groove 602: Top reflector 604: Short slot 702: Top reflector 704: Short slot 802: Top reflector 804: Short slot 806: First short slot 808: Second short slot 810: Third short slot 812: Fourth short slot 814: Fifth short slot 816: Sixth short slot 818: Seventh short slot 820: First elongated slot 822: Second short slot 900: Method 910,920: Brackets 912,914,916,918,922,924,926,930,932,,934,,936,938: Squares R: Rotation

Claims

1. A top reflector, comprising: A reflector body configured to overlap with a reaction chamber of a semiconductor processing system, the reflector body having: a recessed surface extending between a first longitudinal edge and a second longitudinal edge of the reflector body; and a reflective surface spaced from the recessed surface by a thickness of the reflector body, the reflective surface having a greater reflectivity than the recessed surface; wherein the recessed surface and the reflective surface define a thermometer extending through the thickness of the reflector body; wherein the recessed surface and the reflective surface define a plurality of elongated slots extending through the thickness of the reflector body; and wherein the recessed surface and the reflective surface define a plurality of shortened slots extending through the reflector body, and the number of shortened slots is greater than the number of elongated slots, wherein the shortened slots define three or more shortened slots of unequal length.

2. The top reflector of claim 1, wherein the short constriction slot has a short constriction slot length, wherein the elongated slot has an elongated slot length, and wherein the short constriction slot length is between 10% and 60% of the elongated slot length.

3. The top reflector as claimed in claim 1, wherein one or more of the elongated slots separate the shortened slots from the pyrometer port.

4. The top reflector of claim 1, wherein one or more of the elongated slots separate the shortened slots from one side edge of the reflector body.

5. The top reflector of claim 1, wherein a first of the short constrictions and a second of the short constrictions longitudinally overlap.

6. The top reflector of claim 1, wherein one of the short constrictions, the first one, is longitudinally offset from one of the short constrictions, the second one.

7. The top reflector of claim 1, wherein at least one of the short constrictions overlaps longitudinally with the high-temperature port.

8. The top reflector of claim 1, wherein one of the short constrictions, the first one, is laterally offset from one of the short constrictions, the second one.

9. The top reflector of claim 1, wherein the recessed surface defines a plurality of extended recesses extending parallel to each other, wherein the elongated slots are parallel to the extended recesses, and wherein the shortened slots are parallel to the extended recesses.

10. The top reflector of claim 9, wherein a first of the shortened slots and a second of the shortened slots are separated by one or more of the expanded grooves.

11. The top reflector of claim 9, wherein one or more of the short narrow slots are separated from the high temperature port by the expanding grooves.

12. The top reflector of claim 1, wherein the reflective surface has a reflective coating comprising gold, and wherein the top reflector further comprises an intermediate layer coupled to the reflective coating to the reflector body, wherein the intermediate layer comprises nickel.

13. The top reflector of claim 1, wherein the reflective surface includes a plurality of concave portions extending parallel to each other, wherein the concave portions define a concave profile between a first side edge and a second side edge of one of the reflector bodies, wherein a first of the shortened slots extends through the first of the concave portions, and wherein a second of the shortened slots extends through the second of the concave portions.

14. The top reflector of claim 13, wherein a first of the shortened slots and a second of the shortened slots are separated by one or more of the concave portions.

15. The top reflector of claim 1, wherein the pyrometer port is a first pyrometer port, and wherein the groove surface and the reflector surface define a second pyrometer port extending through the thickness of the reflector body between the first pyrometer port and the first longitudinal edge of the reflector body.

16. The top reflector of claim 15, wherein one or more of the short constrictions longitudinally overlap the first pyrometer port and the second pyrometer port.

17. The top reflector of claim 16, wherein two or more of the short constrictions are longitudinally offset from the second high-temperature port.

18. A semiconductor processing system, comprising: A reaction chamber having a base supported within an interior of the reaction chamber; A heater element is supported above the reaction chamber; And a reflector as described in claim 1, supported above the heater element, wherein the heater element is radiatively coupled to the base by the reflective surface of a reflector body of the reaction chamber and a plurality of walls of the reaction chamber.

19. A film deposition method, comprising: A coolant is received by a reflector supported above a reaction chamber; The coolant is made to flow through a plurality of elongated slots and a plurality of short constricted slots extending through the top reflector; the elongated slots and short constricted slots are used to distribute the coolant to an exterior of the reaction chamber; and the short constricted slots are used to deflect the coolant to the exterior of the reaction chamber, wherein the short constricted slots deflect the coolant toward an injection end or an outlet end of the reaction chamber.

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