Semiconductor substrate heating device, semiconductor equipment and temperature control method

Abstract

This invention provides a semiconductor substrate heating device, including a heating cavity, a main heating section, a compensation control section, and at least one temperature compensation unit. The compensation control section and multiple temperature compensation units are disposed within the heating cavity of the semiconductor substrate heating device. The top surface of the compensation control section corresponds to the bottom surface of the heating plate. Multiple temperature compensation units, disposed between the heating plate and the compensation control section and communicatively connected to it, are corresponding one-to-one with multiple temperature control compensation areas on the bottom surface of the heating plate. This avoids complex wiring designs and enables temperature compensation adjustment of the temperature control compensation areas under the control of the compensation control section, thereby effectively controlling the temperature uniformity of the semiconductor substrate with minimal manufacturing and maintenance costs.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor manufacturing technology, and in particular to a semiconductor substrate heating device, semiconductor equipment and a temperature control method. Prior Art

[0002] Currently, substrate baking equipment is frequently used during semiconductor substrate processing. During the heating and baking process, substrate temperature uniformity is crucial to achieving process specifications. Existing technologies, such as Chinese patent application publication number CN103792974A, employ a technical solution to improve the temperature uniformity of the hot plate by optimizing the heating circuit and appropriately increasing the number of heater zones.

[0003] However, increasing the number of heater zones will significantly increase the heater development cycle and R&D cost expenditure, significantly increase the cost of the temperature control part, and at the same time take up more space for installing hardware and impose stricter control requirements during the heater manufacturing process, which can easily cause the heater yield to decrease, which in turn is passed on to increased heater costs.

[0004] By increasing the partitions to optimize the heating circuit, this approach will produce more outgoing line designs, making the routing more complicated and increasing the difficulty of designing the surrounding structure of the heater.

[0005] Therefore, it is necessary to develop a new type of semiconductor substrate heating device to solve the above problems existing in the prior art. Summary of the Invention

[0006] The present invention is directed to a semiconductor substrate heating device, a semiconductor device including the semiconductor substrate heating device, and a temperature control method for the semiconductor device, which can effectively control the temperature uniformity of the semiconductor substrate with the lowest possible manufacturing and maintenance costs.

[0007] To achieve the above-mentioned purpose, the semiconductor substrate heating device of the present invention comprises: Heating cavity; A main heating portion, comprising a heating plate disposed within the heating cavity, wherein the bottom surface of the heating plate comprises at least one temperature control compensation area; A compensation control portion is disposed in the heating cavity, wherein the top surface of the compensation control portion is adjacent to the bottom surface of the heating plate; At least one temperature compensation unit is provided between the heating plate and the compensation control unit and is communicatively connected to the compensation control unit; The temperature compensation unit is arranged corresponding to the temperature control compensation area to perform temperature compensation adjustment on the temperature control compensation area under the control of the compensation control unit.

[0008] The beneficial effect of the semiconductor substrate heating device of the present invention is that a compensation control part and multiple temperature compensation units are arranged in the heating chamber of the semiconductor substrate heating device, the top surface of the compensation control part is adjacent to the bottom surface of the heating plate, and the multiple temperature compensation units arranged between the heating plate and the compensation control part and communicatively connected to the compensation control part are arranged in a one-to-one correspondence with the multiple temperature control compensation areas arranged on the bottom surface of the heating plate, avoiding a complex wiring design, and being able to perform temperature compensation adjustment on the temperature control compensation areas under the control of the compensation control part, thereby effectively controlling the temperature uniformity of the semiconductor substrate with the lowest possible manufacturing and maintenance costs.

[0009] Preferably, the temperature compensation unit includes an auxiliary temperature adjustment unit communicatively connected to the compensation control unit, and the distance between the top of the auxiliary temperature adjustment unit and the corresponding temperature control compensation area is greater than or equal to 0.

[0010] Further preferably, the auxiliary temperature adjustment part includes a heat conducting element or a cooling element.

[0011] Preferably, the temperature compensation unit further includes a fixing portion connected to the auxiliary temperature adjustment portion, and the auxiliary temperature adjustment portion is fixed to the corresponding temperature control compensation area through the fixing portion.

[0012] Preferably, the semiconductor substrate heating device further comprises a partition plate arranged between the main heating part and the compensation control part, and the temperature compensation unit is arranged on the partition plate.

[0013] Further preferably, the constituent material of the partition plate includes a heat insulating material.

[0014] Further preferably, the number of the partition plates is at least 2, and the temperature compensation unit is disposed between adjacent partition plates.

[0015] Preferably, the temperature compensation unit further includes a support portion arranged at the bottom of the auxiliary temperature adjustment portion, and an elastic portion arranged within the support portion, wherein the support portion is arranged on the partition plate, and the elastic portion, under the action of the support portion, applies a force to the auxiliary temperature adjustment portion in the direction corresponding to the temperature control compensation area to adjust the distance between the top end of the auxiliary temperature adjustment portion and the corresponding temperature control compensation area.

[0016] Further preferably, the support portion includes an inner support portion supporting the auxiliary temperature regulating portion and an outer support portion surrounding the inner support portion, and there is a distance between the outer side wall of the inner support portion and the outer side wall of the outer support portion.

[0017] Further preferably, one end of the elastic portion is arranged inside the outer support portion, and the other end is in contact with the bottom of the inner support portion.

[0018] Further preferably, the elastic portion is arranged around the bottom of the inner support portion and is in contact with the partition plate.

[0019] Further preferably, a wire hole is provided in the inner support portion to allow the wire to pass through.

[0020] Further preferably, a wire hole is provided in the outer support portion to allow the wire to pass through.

[0021] Further preferably, the main heating unit also includes a main control unit for temperature control, and the compensation control unit is communicatively connected to the main control unit to perform the temperature compensation adjustment under the control of the main control unit.

[0022] Further preferably, the top surface of the heating plate includes a substrate contact area, the bottom surface of the heating plate includes a bottom surface control area corresponding to the substrate contact area, and the temperature control compensation area is any area within the bottom surface control area.

[0023] The semiconductor device of the present invention includes the semiconductor substrate heating device.

[0024] The semiconductor device also includes a temperature calibration unit, and the main heating unit also includes a main control unit. The temperature calibration unit contacts the heating surface of the heating plate in the semiconductor substrate heating device to obtain and feedback temperature calibration information. The main control unit is arranged outside the heating chamber and is communicatively connected to at least one of the compensation control unit and the temperature calibration unit.

[0025] The temperature control method of the semiconductor device of the present invention comprises the following steps: S0: providing the semiconductor device, the semiconductor device comprising a heating chamber, a main heating part, a compensation control part and at least one temperature compensation unit; S1: driving at least one of the temperature compensation units through the compensation control unit to perform temperature compensation adjustment on the heating plate of the main heating unit. Simple diagram description

[0026] Figure 1 is a schematic diagram of a partial structure of a semiconductor substrate heating device according to an embodiment of the present invention; Figure 2 is a schematic diagram of a partial structure of another semiconductor substrate heating device according to an embodiment of the present invention; Figure 3 is an enlarged schematic diagram of the structure of portion A shown in Figure 2; Figure 4 is a schematic structural diagram of a temperature compensation unit according to an embodiment of the present invention; Figure 5 is a schematic diagram of the internal structure of the temperature compensation unit shown in Figure 4; Figure 6 is a schematic diagram of the internal structure of another temperature compensation unit according to an embodiment of the present invention; Figure 7 is a schematic diagram of the working state of the temperature compensation unit shown in Figure 6 in the heating chamber; FIG8 is a schematic diagram of a working state of a semiconductor device according to an embodiment of the present invention. Implementation Method

[0027] To make the purpose, technical solutions, and advantages of the embodiments of the present invention more clear, the technical solutions in the embodiments of the present invention will be clearly and completely described below. Obviously, the described embodiments are part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without making any further progress are within the scope of protection of the present invention. Unless otherwise defined, the technical terms or scientific terms used herein shall have the common meanings understood by those skilled in the art in the field to which the present invention belongs. The words "including" and similar words used herein mean that the elements or objects preceding the word include the elements or objects listed after the word and their equivalents, without excluding other elements or objects.

[0028] An embodiment of the present invention provides a semiconductor substrate heating device capable of improving the uniformity of semiconductor substrate temperature control with minimal manufacturing and maintenance costs.

[0029] A semiconductor substrate heating device according to an embodiment of the present invention includes a heating chamber, a main heating portion, a compensation control portion, and at least one temperature compensation unit.

[0030] In some embodiments, the main heating unit includes a main control unit, a heating plate, and a main heating unit disposed on the heating plate. The main control unit is communicatively connected to the main heating unit. The main control unit is configured to perform temperature control. The main control unit controls the temperature of the main heating unit, generating heat on the heating surface of the heating plate through the main heating unit. The semiconductor substrate is placed toward the heating surface of the heating plate, and the heating surface of the heating plate transfers heat to the semiconductor substrate.

[0031] Specifically, the structural relationship between the main control part, the heating plate and the main heating unit and the specific implementation method are conventional technical means of those skilled in the art and will not be elaborated here.

[0032] FIG1 is a partial structural diagram of a semiconductor substrate heating device according to an embodiment of the present invention.

[0033] 1 , in a semiconductor substrate heating device 1 , a heating plate 11 , at least one temperature compensation unit 12 and a compensation control unit 13 are provided in a heating chamber (not shown in the figure).

[0034] In some embodiments, the bottom surface of the heating plate 11 includes at least one temperature control compensation area.

[0035] In some embodiments, the top surface of the heating plate includes a substrate contact area, the bottom surface of the heating plate includes a bottom surface control area corresponding to the substrate contact area, and the temperature control compensation area is any area within the bottom surface control area.

[0036] The specific range of the temperature control compensation area and the distance between adjacent control compensation areas are determined by the structural performance, process requirements and installation conditions of the heating plate 11 itself.

[0037] In some specific embodiments, the plurality of temperature control compensation areas are distributed in an array relative to the center of the bottom surface control area. Specific array distribution types include, but are not limited to, an annular array and a rectangular array.

[0038] In some embodiments, referring to FIG. 1 , the top surface of the compensation control unit 13 is adjacent to the bottom surface of the heating plate 11, i.e., a cavity region is enclosed between the top surface of the compensation control unit 13 and the bottom surface of the heating plate 11. At least one temperature compensation unit 12 is disposed in the region between the heating plate 11 and the compensation control unit 13 and is communicatively connected to the compensation control unit 13.

[0039] In some embodiments, the temperature compensation unit 12 is provided corresponding to the temperature control compensation area to perform temperature compensation adjustment on the temperature control compensation area under the control of the compensation control unit 13.

[0040] In some embodiments, the compensation control unit 13 is communicatively connected to the main control unit of the main heating unit to perform the temperature compensation adjustment under the control of the main control unit.

[0041] In some embodiments, the main control unit is arranged outside the heating chamber, and at least one temperature compensation unit 12 is arranged in the area between the heating plate 11 and the compensation control unit 13, and is communicatively connected to the compensation control unit 13, so that the wiring in the heating chamber is concentrated between the heating plate 11 and the compensation control unit 13, avoiding a complicated wiring design and facilitating the disassembly, assembly and maintenance of the semiconductor substrate heating device.

[0042] Furthermore, by electrically connecting the compensation control unit 13 and the main control unit through a single communication lead, the temperature compensation adjustment of the heating plate 11 can be achieved by controlling the compensation control unit 13, further avoiding a complicated wiring design and facilitating the disassembly, assembly and maintenance of the semiconductor substrate heating device.

[0043] In some specific embodiments, the compensation control unit 13 is a circuit board, and a control circuit is provided on the surface of the circuit board to control at least one of the temperature compensation units 12. The specific implementation method of the control can be synchronous control or independent control.

[0044] In some specific embodiments, the compensation control unit 13 includes a control board consisting of a printed circuit board (PCB) and functional components arranged on the PCB.

[0045] In some specific embodiments, the compensation control unit 13 also includes a heat-insulating structure that encapsulates the control board. The heat-insulating structure can cover at least one surface of the control board, such as the top surface of the control unit facing the bottom surface of the heating plate 11, and does not affect the electrical connection between the compensation control unit 13 and the temperature compensation unit 12, so as to prevent the compensation control unit 13 from being affected by heat and affecting the function.

[0046] In some specific embodiments, the main control unit is a host computer.

[0047] In some embodiments, referring to FIG. 1 , the temperature compensation unit 12 includes an auxiliary temperature adjustment unit 121 communicatively connected to the compensation control unit 13 .

[0048] In some embodiments, the auxiliary temperature adjustment portion 121 includes a heat conducting element or a cooling element to heat or cool the temperature control compensation area corresponding to the bottom surface of the heating plate 11.

[0049] In some embodiments, the auxiliary temperature regulating portion 121 and the heating plate 11 interact in a contact manner, that is, the distance between the top of the auxiliary temperature regulating portion 121 and the corresponding temperature control compensation area (not shown in the figure) is equal to 0, so that the top of the auxiliary temperature regulating portion 121 is in contact with the temperature control compensation area (not shown in the figure).

[0050] In some embodiments, the temperature compensation unit 12 further includes a fixing portion connected to the auxiliary temperature adjustment portion 121, and the auxiliary temperature adjustment portion 121 is fixed to the corresponding temperature control compensation area through the fixing portion.

[0051] In some specific embodiments, the heat conducting element of the auxiliary temperature regulating portion 121 is a ceramic heating plate.

[0052] In some specific embodiments, the cooling element of the auxiliary temperature adjustment part 121 is a semiconductor cooling plate.

[0053] In some specific embodiments, the fixing portion is high temperature resistant adhesive.

[0054] In some embodiments, the auxiliary temperature regulating unit 121 is a small air supply component.

[0055] In some embodiments, the small air supply component is configured to spray clean refrigerant gas into the corresponding temperature control compensation area under the control of the compensation control unit 13.

[0056] In some embodiments, the small air supply element includes a gas circulation pipeline corresponding to each of the temperature control compensation areas. The small air supply element is configured to circulate clean refrigerant gas through the gas circulation pipeline under the control of the compensation control unit 13, so as to cool the corresponding temperature control compensation area.

[0057] In some embodiments, the auxiliary temperature regulating portion 121 is a small liquid supply component.

[0058] In some embodiments, the small liquid supply element includes a liquid circulation pipeline corresponding to each of the temperature control compensation areas, and the small liquid supply component is configured to circulate the heating liquid in the liquid circulation pipeline under the control of the compensation control unit 13, so as to increase the temperature of the corresponding temperature control compensation area.

[0059] Fig. 2 is a partial structural diagram of another semiconductor substrate heating device according to an embodiment of the present invention. Fig. 3 is an enlarged structural diagram of portion A shown in Fig. 2 .

[0060] In some embodiments, referring to Figures 2 and 3, the temperature compensation unit 12 is suspended between the heating plate 11 and the compensation control unit 13, such that the distance between the top of the auxiliary temperature adjustment unit 121 and the corresponding temperature control compensation area is greater than 0. The auxiliary temperature adjustment unit 121 and the heating plate 11 interact in a non-contact manner.

[0061] In some specific embodiments, the heating element of the auxiliary temperature adjustment part 121 is an LED lamp or a halogen lamp.

[0062] In some embodiments, the semiconductor substrate heating device further comprises a partition plate disposed within the heating chamber. Referring to FIG. 2 and FIG. 3 , the partition plate 21 is disposed on the heating plate 11 and the temperature compensation unit 12 of the compensation control unit 13 is disposed on the partition plate 21 .

[0063] In some embodiments, the partition plate 21 is made of a thermal insulation material, which helps maintain the thermal conductivity of the heating plate 11.

[0064] In some embodiments, the number of the partition plates 21 is at least two, and the temperature compensation unit 12 is disposed between adjacent partition plates 21. Referring to FIG3 , the partition plates 21 include adjacent first and second partition plates 31 and 32, and the temperature compensation unit 12 is disposed between the first and second partition plates 31 and 32.

[0065] Figure 4 is a schematic diagram of the structure of a temperature compensation unit according to an embodiment of the present invention. Figure 5 is a schematic diagram of the internal structure of the temperature compensation unit shown in Figure 4.

[0066] In some embodiments, referring to Figures 3 to 5, the temperature compensation unit 12 further includes a support portion 41 disposed at the bottom of the auxiliary thermostat 121, and an elastic portion 51 disposed within the support portion 41. The support portion 41 is disposed on the partition plate 21, and the elastic portion 51, under the action of the support portion 41, applies a force to the auxiliary thermostat 121 toward the corresponding temperature control compensation region (not shown in the figures), thereby adjusting the distance between the top of the auxiliary thermostat 121 and the corresponding temperature control compensation region (not shown in the figures).

[0067] In some embodiments, the elastic portion 51, under the action of the support portion 41, applies a force to the auxiliary temperature adjustment portion 121 in a direction corresponding to the temperature control compensation area (not shown in the figure) so that the top of the auxiliary temperature adjustment portion 121 fits with the corresponding temperature control compensation area (not shown in the figure).

[0068] In some embodiments, referring to Figures 4 and 5, the support portion 41 includes an inner support portion 411 supporting the auxiliary temperature adjustment portion 121 and an outer support portion 412 surrounding the inner support portion 411, and there is a distance between the outer wall of the inner support portion 411 and the outer wall of the outer support portion 412.

[0069] In some embodiments, referring to FIG. 3 and FIG. 5 , one end of the elastic portion 51 is disposed in the outer support portion 412 , and the other end is in contact with the bottom of the inner support portion 411 .

[0070] In some embodiments, one end of the elastic portion 51 is fixed within the outer support portion, and the other end is connected to the bottom of the inner support portion 411. The elastic portion 51 is in a compressed state to apply a force to the auxiliary thermostat 121 in a direction corresponding to the temperature control compensation area (not shown in the figure), so that the top end of the auxiliary thermostat 121 is in contact with the corresponding temperature control compensation area (not shown in the figure).

[0071] In some embodiments, referring to Figure 5, the top of the outer support portion 412 includes a recessed structure 52, the auxiliary temperature adjustment portion 121 is fixedly arranged on the top of the inner support portion 411, and at least a portion of the inner support portion 411 is accommodated in the recessed structure 52. The recessed structure 52 limits the movement range of the inner support portion 411 along the radial direction, so that the auxiliary temperature adjustment portion 121 can effectively act on the corresponding temperature control compensation area (not shown in the figure).

[0072] In some embodiments, referring to Figures 3 and 5, a first lead hole 53 is provided within the inner support portion 411 to allow a lead wire to pass through, and a second lead hole 54 is provided within the outer support portion 412 to allow a lead wire to pass through. The first lead hole 53 and the second lead hole 54 are interconnected, and the elastic portion 51 is hollow, with both ends communicating with the first lead hole 53 and the second lead hole 54. This allows a communication lead wire (not shown) provided in the compensation control portion 13 to be electrically connected to the auxiliary thermostat portion 121 via the second lead hole 54, the elastic portion 51, and the first lead hole 53.

[0073] In some specific embodiments, the elastic portion 51 is a spring.

[0074] FIG6 is a schematic diagram of the internal structure of another temperature compensation unit according to an embodiment of the present invention; FIG7 is a schematic diagram of the working state of the temperature compensation unit shown in FIG6 in the heating cavity.

[0075] In some embodiments, referring to Figures 6 and 7 , the elastic portion 51 is disposed around the bottom of the inner support portion 411 and contacts the partition plate 21. Specifically, the outer support portion 412 extends through the first partition plate 31 and contacts the second partition plate 32 at its bottom. The raised structure 63 at the bottom of the outer support portion 412 is positioned between the first and second partition plates 31, 32, to achieve a detachable and fixed connection of the outer support portion 412 to the partition plate 21. The bottom of the elastic portion 51 contacts the top of the second partition plate 32.

[0076] In some embodiments, referring to Figures 6 and 7, the inner support portion 411 includes a bottom protruding structure 61, and the elastic portion 51 is movably disposed around the bottom protruding structure 61. The elastic portion 51 is in a compressed state to apply a force to the auxiliary thermostat 121 toward the corresponding temperature control compensation area (not shown in the figures), causing the top end of the auxiliary thermostat 121 to fit into the corresponding temperature control compensation area (not shown in the figures).

[0077] In some embodiments, referring to Figures 6 and 7, the inner support portion 411 includes a top protruding structure 62, the top of the outer support portion 412 is surrounded by the top protruding structure 62, and the top protruding structure 62 limits the movement range of the outer support portion 412 along the axial direction.

[0078] In some embodiments, referring to FIG. 6 and FIG. 7 , a communication lead (not shown) provided in the compensation control portion 13 can be electrically connected to the auxiliary temperature adjustment portion 121 through the first lead hole 53 opened in the inner support portion 411 .

[0079] FIG8 is a schematic diagram of a working state of a semiconductor device according to an embodiment of the present invention.

[0080] 1 and 8 , the semiconductor device shown in FIG8 includes the semiconductor substrate heating device 1 shown in FIG1 and a temperature calibration unit 83. The outer wall 15 and sealing plate 14 shown in FIG1 are components of the accommodating cavity 82 shown in FIG8 . The accommodating cavity 82 and the cover 81 form a heating cavity.

[0081] 1 and 8 , the temperature calibration unit 83 contacts the top surface of the heating plate 11 to obtain and feed back temperature calibration information. The main control unit 86 is disposed outside the heating cavity (not shown in the figure) and is communicatively connected to at least one of the compensation control unit 13 and the temperature calibration unit 83.

[0082] In some specific embodiments, the temperature calibration unit 83 includes a temperature measuring wafer 84 and a temperature sensor feedback device 85 that are communicatively connected. The temperature measuring wafer 84 is communicatively connected to the main control unit 86 via the temperature sensor feedback device 85.

[0083] The temperature control method of the semiconductor device according to the embodiment of the present invention includes: driving at least one temperature compensation unit 12 through the compensation control unit 13 to perform temperature compensation adjustment on the heating plate 11.

[0084] In some embodiments, the step of driving at least one of the temperature compensation units 12 to perform temperature compensation adjustment on the heating plate 11 through the compensation control unit 13 includes: controlling the compensation control unit 13 through the main control unit 86, thereby driving at least one of the temperature compensation units 12 to perform temperature compensation adjustment on the heating plate 11.

[0085] In some embodiments, before executing the step of controlling the compensation control unit 13 through the main control unit 86, the temperature measuring wafer 84 is placed on the top surface of the heating plate 11, and the temperature of each temperature control area of ​​the heating plate 11 is increased through the control of the main control unit 86 so that the temperature of the temperature measuring wafer 84 reaches the target temperature.

[0086] Specifically, during the heating process of the heating plate 11, the temperature sensor feedback device 85 feeds back the temperature values ​​of each temperature measurement sampling point of the temperature measurement wafer 84 to the main control unit 86. The main control unit 86 compares the average temperature calculated based on the received temperature values ​​of each temperature measurement sampling point with the target temperature to determine whether the temperature measurement wafer has reached the target temperature.

[0087] Prior art typically uses zoned control of the heating plate 11 to adjust the temperature uniformity of the heating plate 11. For example, the heating plate 11 may be divided into seven zones, thirteen zones, fifteen zones, and so on. Considering the layout requirements of functional components and the limitations of wiring installation, the number of zones of the heating plate 11 cannot be infinite. Each zone includes multiple temperature measurement sampling points on the temperature measurement wafer 84. For example, when the temperature measurement wafer 84 indicates that the temperature uniformity of a zone, such as the first zone, does not meet process requirements and requires temperature adjustment, the main control unit 86 will control the first zone to increase its temperature. However, this adjustment can lead to the following problem: the average temperature of some of the multiple temperature measurement sampling points within the first zone may be lower than the target temperature, while the temperature of some of these temperature measurement sampling points may be higher than the target temperature, and the temperature difference between these and the target temperature is likely to be different. Even for temperature-controlled zones with temperatures below the target temperature, the temperature difference between these and the target temperature is likely to be different. It can be seen that the temperature adjustment performed on a single zone can easily cause the problem of uneven temperature over the entire range of the heating plate 11 .

[0088] In addition, the above-mentioned zoning control method requires independent temperature control for each zone, which significantly increases the cost of the temperature control part, and the finer the zoning, the higher the cost.

[0089] In the technical solution of the embodiment of the present invention, after the temperature of the temperature measuring wafer 84 reaches the target temperature, the temperature sensor feedback device 85 obtains temperature information from each temperature measuring area of ​​the temperature measuring wafer 84. Based on this temperature information, multiple temperature control compensation areas on the bottom surface of the heating plate 11 are determined for temperature compensation. The compensation control unit 13 then controls the corresponding temperature compensation unit 12 to increase or decrease the temperature to achieve the purpose of temperature compensation.

[0090] While the embodiments of the present invention have been described in detail above, it will be apparent to those skilled in the art that various modifications and variations can be made to these embodiments. However, it should be understood that such modifications and variations are within the scope and spirit of the invention as described herein. Furthermore, the invention described herein is susceptible to other embodiments and may be practiced or implemented in a variety of ways.

[0091] 1:Semiconductor substrate heating device 11: Heating plate 12: Temperature compensation unit 121: Auxiliary temperature control unit 13: Compensation Control Department 14: Close the board 15: Outer wall 21:Separator 31: First partition plate 32: Second partition plate 41: Supporting part 411: Inner support 412: External support 51: Elastic part 52: Concave structure 53: First lead hole 54: Second lead hole 61: Bottom raised structure 62: Top raised structure 63: Raised structure 81: Cover 82: Accommodating cavity 83: Temperature Calibration Department 84: Temperature measurement wafer 85: Temperature sensor feedback device 86: Main Control Unit

Claims

1. A semiconductor substrate heating device, comprising: A heating cavity; a main heating unit including a heating plate disposed within the heating cavity, the bottom surface of the heating plate including at least one temperature compensation area; a compensation control unit disposed within the heating cavity, the top surface of the compensation control unit adjacent to the bottom surface of the heating plate; and at least one temperature compensation unit disposed between the heating plate and the compensation control unit, and communicatively connected to the compensation control unit; wherein the temperature compensation unit is correspondingly disposed to the temperature compensation area, so as to perform temperature compensation adjustment on the temperature compensation area under the control of the compensation control unit; wherein the temperature compensation unit includes an auxiliary temperature adjustment unit communicatively connected to the compensation control unit, the distance between the top end of the auxiliary temperature adjustment unit and the corresponding temperature compensation area is greater than or equal to 0; wherein the semiconductor substrate heating device further includes a partition plate disposed between the heating plate and the compensation control unit, the temperature compensation unit being disposed on the partition plate; and wherein the number of partition plates is at least 2, the temperature compensation unit being snapped between adjacent partition plates.

2. The semiconductor substrate heating apparatus according to claim 1, wherein the auxiliary temperature control unit includes a heat-conducting element or a cooling element.

3. The semiconductor substrate heating apparatus according to claim 1, wherein the temperature compensation unit further includes a fixing part connected to the auxiliary temperature adjustment part, the auxiliary temperature adjustment part being fixed to the corresponding temperature control compensation area via the fixing part.

4. The semiconductor substrate heating apparatus according to claim 1, wherein the material of the partition plate includes a heat-insulating material.

5. The semiconductor substrate heating apparatus according to claim 1, wherein the temperature compensation unit further includes a support portion disposed at the bottom of the auxiliary temperature control portion and an elastic portion disposed within the support portion, the support portion being disposed on the partition plate, and the elastic portion applying a force to the auxiliary temperature control portion in the direction corresponding to the temperature control compensation area under the action of the support portion to adjust the distance between the top of the auxiliary temperature control portion and the corresponding temperature control compensation area.

6. The semiconductor substrate heating apparatus according to claim 5, wherein the support portion includes an inner support portion supporting the auxiliary temperature control portion and an outer support portion surrounding the inner support portion, and a gap exists between the outer side wall of the inner support portion and the outer side wall of the outer support portion.

7. The semiconductor substrate heating apparatus according to claim 6, wherein one end of the elastic portion is disposed within the outer support portion, and the other end is in contact with the bottom of the inner support portion.

8. The semiconductor substrate heating apparatus according to claim 6, wherein the elastic portion surrounds the bottom of the inner support portion and contacts the partition plate.

9. The semiconductor substrate heating apparatus according to claim 6, wherein the inner support portion is provided with a lead hole that allows leads to pass through.

10. The semiconductor substrate heating apparatus according to claim 6, wherein the outer support portion is provided with a lead hole that allows a lead wire to pass through.

11. The semiconductor substrate heating apparatus according to claim 1, wherein the main heating unit further includes a main control unit for temperature control, and the compensation control unit is communicatively connected to the main control unit to perform the temperature compensation adjustment under the control of the main control unit.

12. The semiconductor substrate heating apparatus according to claim 1, wherein the top surface of the heating plate includes a substrate contact area, the bottom surface of the heating plate includes a bottom surface control area corresponding to the substrate contact area, and the temperature control compensation area is any area within the bottom surface control area.

13. A semiconductor device comprising a semiconductor substrate heating device as described in any one of claims 1-12.

14. The semiconductor device according to claim 13 further includes a temperature calibration unit, the main heating unit further includes a main control unit, the temperature calibration unit is in contact with the heating surface of the heating plate in the semiconductor substrate heating device to acquire and feed back a temperature calibration message, the main control unit is disposed outside the heating cavity and is communicatively connected to at least one of the compensation control unit and the temperature calibration unit.

15. A method for temperature control of a semiconductor device, employing the semiconductor device as described in any one of claims 13-14, the method comprising the following steps: S0: providing the semiconductor device, the semiconductor device including the heating cavity, the main heating section, the compensation control section and the temperature compensation unit; S1: driving the temperature compensation unit through the compensation control section to perform temperature compensation adjustment on the bottom surface of the heating plate of the main heating section.

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