Composition, curing film, structure, filter, solid-state imaging element, image display device, and method for manufacturing curing film

Abstract

The present invention provides a composition, a hardened film using the aforementioned composition, a structure, a filter, a solid-state imaging element and an image display device, and a method for manufacturing a hardened film using the aforementioned composition. The aforementioned composition contains: particles having silanol groups; at least one generating agent selected from the group consisting of acid generating agents and alkali generating agents; and a solvent. The content of particles having silanol groups in the total solids component of the composition is 43% by mass or more.

Description

[Technical Field]

[0001] This invention relates to a composition containing particles. Furthermore, this invention relates to a hardened film, a structure, a filter, a solid-state imaging element, an image display device, and a method for manufacturing the hardened film. [Previous Technology]

[0002] Optical functional layers such as low-refractive-index films are applied to the surface of transparent substrates to prevent the reflection of incident light. They have a wide range of applications, including display devices, optical equipment, building materials, observation instruments, window glass, and other products. Various materials, both organic and inorganic, are being developed for this purpose. In recent years, development of materials for use in optical equipment has been ongoing.

[0003] For example, optical functional layers used in precision optical devices such as image sensors require fine and accurate fabrication properties. Therefore, vapor phase methods such as vacuum evaporation or sputtering, which are suitable for fine fabrication, have been used in the past. As materials for this, single-layer films composed of materials such as MgF2 or cryolite have been put into practical use. In addition, the application of metal oxides such as SiO2, TiO2, and ZrO2 has also been explored.

[0004] On the other hand, in vapor phase methods such as vacuum evaporation or sputtering, the processing equipment is expensive, which sometimes increases the manufacturing cost. In contrast, recent studies have focused on using compositions containing inorganic particles such as silicon dioxide particles to manufacture optical functional layers such as low refractive index films.

[0005] Patent document 1 describes the use of a composition containing hollow silicon dioxide particles to make an anti-reflective film, etc.

[0006] [Patent Document 1] Japanese Patent Application Publication No. 2014-034488

[0007] In recent years, attempts have been made to form hardened films on components with low heat resistance. For example, display devices have been moving towards organic electroluminescence (EL) technology in recent years. Organic semiconductor components such as organic electroluminescent display elements are components with low heat resistance. Therefore, when forming a hardened film on such components with low heat resistance, it is desirable to form the hardened film using a low-temperature process below 150°C to suppress thermal damage to the support.

[0008] However, when a hardened film is formed by a low-temperature process, the hardening degree of the hardened film is sometimes insufficient, and there is room for improvement in the moisture resistance of the hardened film. Furthermore, according to the inventors' research, it is known that the composition described in Patent Document 1 also has room for further improvement in the moisture resistance of the obtained hardened film. [Summary of the Invention]

[0009] Therefore, the object of the present invention is to provide a composition capable of forming a hardened film with excellent moisture resistance. Furthermore, the present invention provides a hardened film, a structure, a filter, a solid-state imaging element, an image display device, and a method for manufacturing the hardened film.

[0010] The present invention provides the following: <1> A composition comprising: particles having silanol groups; at least one generating agent selected from the group consisting of acid generating agents and base generating agents; and a solvent, wherein the content of the particles having silanol groups in the total solids component of the composition is 43% by mass or more. <2> The composition as described in <1>, wherein the total content of the particles having silanol groups and the generating agent in the total solids component of the composition is 45% to 99% by mass. <3> The composition as described in <1> or <2>, wherein the particles having silanol groups are silicon dioxide particles. <4> The composition as described in <3>, wherein the silica particles comprise at least one selected from the group consisting of silica particles in a beaded configuration, silica particles in a planar configuration, and silica particles with a hollow structure. <5> The composition as described in any one of <1> to <4>, wherein the generating agent is an acid generating agent, and the acid generating agent comprises a photoacid generating agent. <6> The composition as described in <5>, wherein the content of the photoacid generating agent in the total solids component of the composition is 1 to 10% by mass. <7> The composition as described in <5> or <6>, wherein the photoacid generating agent comprises at least one selected from the group consisting of oxime sulfonate compounds and trisulfite compounds. <8> A composition as described in any one of <1> to <4>, wherein the generating agent is an alkali generating agent, and the alkali generating agent includes a photoalkali generating agent. <9> A composition as described in <8>, wherein the content of the photoalkali generating agent in the total solids component of the composition is 1 to 10% by mass. <10> A composition as described in <8> or <9>, wherein the photoalkali generating agent contains at least one selected from the group consisting of carbamate compounds and acetooxime compounds. <11> A composition as described in any one of <1> to <10>, further containing a silanol compound with a molecular weight of less than 1000. <12> A composition as described in any one of <1> to <11>, further containing a surfactant. <13> A composition as described in any one of <1> to <12>, further containing a compound having an alkoxysilicone group. <14> The composition as described in any one of <1> to <13>, wherein the resin content in the total solids component of the composition is 30% by mass or less. <15> The composition as described in any one of <1> to <14> is a composition for forming a component adjacent to a filter having a plurality of pixels. <16> The composition as described in any one of <1> to <15> is a composition for forming a spacer. <17> The composition as described in any one of <1> to <16>, wherein when the composition is coated on a silicon wafer and heated at 100°C for 5 minutes to form a film with a thickness of 0.4 μm, the refractive index of the film for light with a wavelength of 633 nm is 1.4 or less.<18> A hardened film obtained from any one of the components described in <1> to <17>. <19> A structure comprising: a support; a partition obtained from any one of the components described in <1> to <17> disposed on the support; and pixels disposed in areas defined by the partitions. <20> A filter having the hardened film described in <18>. <21> A solid-state imaging element having the hardened film described in <18>. <22> An image display device having the hardened film described in <18>. <23> A method for manufacturing a hardened film, comprising: a step of coating a composition described in any one of <1> to <17> onto a support to form a composition layer; and a step of hardening the composition layer, wherein the film formed by hardening the composition layer is obtained by passing all steps at a temperature below 150°C, i.e., a hardened film, and the step of hardening the composition layer includes a step of generating an acid or alkali from an acid-generating agent or alkali-generating agent contained in the composition layer by irradiating the composition layer with light or heating. [Effects of the Invention].

[0011] According to the present invention, a composition capable of forming a hardened film with excellent moisture resistance can be provided. Furthermore, the present invention can provide a hardened film, a structure, a filter, a solid-state imaging element, an image display device, and a method for manufacturing the hardened film.

Implementation Method

[0013] Hereinafter, the contents of the present invention will be described in detail. In this specification, "~" is used to mean that the values ​​recorded before and after it are included as lower and upper limits. In the marking of groups (atomic groups) in this specification, the markings without substituted and unsubstituted include groups (atomic groups) without substituents, and also include groups (atomic groups) with substituents. For example, "alkyl" includes not only alkyl groups without substituents (unsubstituted alkyl groups), but also alkyl groups with substituents (substituted alkyl groups). In this specification, unless otherwise specified, "exposure" includes not only exposure using light, but also the drawing using particle beams such as electron beams and ion beams. Furthermore, examples of light used in exposure include the bright-line spectrum of mercury lamps, far-ultraviolet light represented by excimer lasers, extreme ultraviolet light (EUV light), X-rays, electron beams, and other photochemical rays or radiation. In this specification, "(meth)acrylate" means either or both of acrylate and methacrylate; "(meth)acrylic acid" means either or both of acrylic acid and methacrylic acid; and "(meth)acrylyl" means either or both of acrylyl and methacrylyl. In this specification, the weight-average molecular weight and number-average molecular weight are polystyrene conversion values ​​measured by GPC (gel permeation chromatography). In this specification, total solids content refers to the total mass of the components after removing the solvent from all components of the composition. In this specification, the term "step" includes not only independent steps but also steps that cannot be clearly distinguished from other steps, as long as the expected effect of the step is achieved.

[0014] <Composition> The composition of the present invention is characterized by containing: particles having silanol groups; at least one generating agent selected from the group consisting of acid generating agents and base generating agents; and a solvent, wherein the content of the particles having silanol groups in the total solids of the composition is 43% by mass or more.

[0015] The composition according to the present invention can form a hardened film with excellent moisture resistance. In particular, even when the hardened film is formed at a low temperature of 150°C or below (preferably 120°C or below), a hardened film with excellent moisture resistance can be formed.

[0016] While the detailed reasons for obtaining these effects are not clear, it can be inferred that: The composition of the present invention contains at least one generating agent selected from the group consisting of acid generating agents and alkali generating agents. Therefore, it can be inferred that when energy such as light or heat is applied to form a hardened film using the composition of the present invention, an acid or alkali is generated from the aforementioned generating agent, and the generated acid or alkali can promote the dehydration condensation reaction of particles having silanol groups. Furthermore, the composition of the present invention contains 43% by mass or more of the aforementioned silanol-containing particles in the total solids component of the composition. Therefore, it can be inferred that the high proportion of silanol groups in the composition facilitates the dehydration condensation reaction of particles having silanol groups. For this reason, it can be inferred that the composition of the present invention can form a hardened film with excellent moisture resistance.

[0017] It is preferable that the viscosity of the composition of the present invention at 25°C is 3.6 mPa·s or less, more preferably 3.4 mPa·s or less, and even more preferably 3.2 mPa·s or less. Furthermore, it is preferable that the lower limit is 1.0 mPa·s or more, more preferably 1.4 mPa·s or more, and even more preferably 1.8 mPa·s or more.

[0018] It is preferable that the concentration of the solid component in the composition of the present invention is 5% by mass or more, more preferably 7% by mass or more, and even more preferably 8% by mass or more. It is preferable that the concentration is 15% by mass or less, more preferably 12% by mass or less, and even more preferably 10% by mass or less.

[0019] It is preferable that the surface tension of the composition of the present invention at 25°C is 27.0 mN / m or less, more preferably 26.0 mN / m or less, further preferably 25.5 mN / m or less, and even more preferably 25.0 mN / m or less. A lower limit of 20.0 mN / m or more is preferred, 21.0 mN / m or more is more preferred, and 22.0 mN / m or more is even more preferred.

[0020] When the composition of the present invention is coated onto a glass substrate and heated at 100°C for 5 minutes to form a film with a thickness of 0.4 μm, from the viewpoint of the stability of the composition, it is preferable that the contact angle of the aforementioned film in water at 25°C is 20° or more, more preferably 25° or more, and further preferably 30° or more. From the viewpoint of the coatability of the composition, it is preferable that the upper limit is 70° or less, more preferably 65° or less, and further preferably 60° or less. The above contact angles are values ​​measured using a contact angle meter (manufactured by Kyowa Interface Science Co., Ltd., DM-701).

[0021] When the composition of the present invention is coated onto a silicon wafer and heated at 100°C for 5 minutes to form a film with a thickness of 0.4 μm, it is preferable that the refractive index of the film at a wavelength of 633 nm is 1.45 or less, more preferably 1.4 or less, further preferably 1.35 or less, even more preferably 1.3 or less, and still more preferably 1.27 or less. The lower limit is not particularly limited, but it can be set to 1.15 or more. The above refractive index is a value measured using an ellipsometer (JA Woollam, VUV-vase [product name]). The measurement temperature is 25°C.

[0022] The components of the present invention can be used in optical functional layers in image display devices or solid-state imaging elements. Examples of optical functional layers include anti-reflective layers, low-refractive-index layers, and waveguides.

[0023] Furthermore, the composition of the present invention can also be used as a composition for forming a component adjacent to the aforementioned pixels of a filter having a plurality of pixels. Examples of such components include partitions that divide the pixels of the filter from each other. That is, the composition of the present invention can preferably be used as a component for forming partitions. Examples of pixels divided by partitions include colored pixels, transparent pixels, pixels of near-infrared transmission filter layers, and pixels of near-infrared cutoff filter layers. Examples of colored pixels include red pixels, green pixels, blue pixels, magenta pixels, cyan pixels, and yellow pixels. Furthermore, the aforementioned components can also be used on the light incident side or light emitting side of the filter. Moreover, in this specification, the case where a component is adjacent to a pixel is not limited to the case where the component is in contact with the pixel, but also includes the case where the component and the pixel are located in other layers.

[0024] Furthermore, the composition of the present invention can be used to form a hardened film on a microlens of a solid-state imaging element or image display device having a microlens.

[0025] Hereinafter, the components used in the composition of the present invention will be described.

[0026] <<Particles with silanol groups>> The composition of the present invention contains particles with silanol groups (hereinafter also referred to as specific particles).

[0027] It is preferable that the specific particles are those that are difficult to dissolve in water.

[0028] Silicon dioxide particles can be cited as an example of a specific particle.

[0029] Furthermore, as another form of specific particles, surface-treated particles are those in which inorganic particles or resin particles are surface-treated with silanol compounds. Methods for surface treatment with silanol compounds include sol-gel methods and silane coupling treatments. Moreover, in the case of surface-treated particles, the total mass of the inorganic particles or resin particles of the work being treated with silanol compounds and the silanol compounds adhering to the surface of the work being treated is the mass of the particles having silanol groups. Examples of such inorganic particles include titanium oxide particles, strontium titanate particles, barium titanate particles, zinc oxide particles, magnesium oxide particles, zirconium oxide particles, aluminum oxide particles, barium sulfate particles, aluminum hydroxide particles, calcium silicate particles, aluminum silicate particles, and zinc sulfide particles. Examples of resin particles include (meth)acrylic acid resin particles, epoxy resin particles, polycarbonate resin particles, polyether resin particles, polyimide resin particles, polyamide resin particles, polyolefin resin particles, cyclic olefin resin particles, polyester resin particles, styrene resin particles, fluoropolymer resin particles, and siloxane resin particles. Examples of silanol compounds used for surface treatment include monosilanol compounds such as trimethylsilanol, triethylsilanol, phenyldimethylsilanol, diphenylmethylsilanol, triphenylsilanol, and dihydroxydiphenylsilane (diphenyldisilanol). The content of the silanol compound in the surface-treated particles is preferably 0.1% to 30% by mass. A lower limit of 1% by mass or more is preferred, and 5% by mass or more is even more preferred. An upper limit of 20% by mass or less is preferred, and 15% by mass or less is even more preferred.

[0030] Considering that it is easy to form a hardened film with excellent moisture resistance and low refractive index, silicon dioxide particles are preferred as the specific particles.

[0031] Examples of silica particles include silica particles in the form of a plurality of spherical silica particles connected in a beaded manner, silica particles in the form of a plurality of spherical silica particles connected in a planar manner, hollow silica particles, and solid silica particles. Considering the ease of forming a hardened film with superior moisture resistance and lower refractive index, it is preferable that the silica particles are selected from at least one of the group consisting of silica particles in the form of a plurality of spherical silica particles connected in a beaded manner, silica particles in the form of a plurality of spherical silica particles connected in a planar manner, and hollow silica particles. It is even more preferable that the silica particles are in the form of a plurality of spherical silica particles connected in a beaded manner or silica particles in the form of a plurality of spherical silica particles connected in a planar manner. Hereinafter, the terms "beaded silica" and "silica particles consisting of multiple spherical silica particles connected in a beaded manner" will be used interchangeably. Furthermore, silica particles consisting of multiple spherical silica particles connected in a beaded manner can also have a shape consisting of multiple spherical silica particles connected in a planar manner. Hollow silica particles are those with cavities inside. Hereinafter, hollow silica particles will also be referred to as hollow silica. Solid silica particles refer to silica particles that do not have cavities inside.

[0032] Furthermore, it is preferable that the silica particles are treated with a hydrophobicating agent that reacts with the silanol groups on the surface of the silica particles. As the hydrophobicating agent, a compound having a structure that reacts with the silanol groups on the surface of the silica particles (preferably a structure that couples with the silanol groups on the surface of the silica particles) and improving the hydrophobicity of the silica particles can be used. An organic compound is preferred as the hydrophobicating agent. Specific examples of hydrophobicating agents include organosilane compounds, organotitanium compounds, organozirconium compounds, and organoaluminum compounds; from the perspective of suppressing the increase in refractive index, organosilane compounds are more preferred. Furthermore, when the surface of silicon dioxide particles is treated with a surface treatment agent such as a hydrophobic treatment agent, the total mass of the silicon dioxide particles and the surface treatment agent attached to the silicon dioxide particles is defined as the mass of the particles with silanol groups.

[0033] Furthermore, in this specification, "spherical" in "spherical silicon dioxide" means substantially spherical, and can be deformed within the scope of achieving the effects of the present invention. For example, it also includes the meaning of having an uneven surface or a flat shape with a long axis in a specified direction. Also, "a plurality of spherical silicon dioxide connected in a beaded manner" refers to a structure in which a plurality of spherical silicon dioxide are connected to each other in a straight chain and / or branched form. For example, as shown in FIG1, a structure in which a plurality of spherical silicon dioxide 1 are connected to each other by a joint 2 smaller than its outer diameter can be cited. Furthermore, in the present invention, the structure of "a plurality of spherical silicon dioxide connected in a beaded manner" includes not only structures connected in a ring shape, but also structures in a chain shape with ends. Also, "a plurality of spherical silicon dioxide connected in a planar manner" refers to a structure in which a plurality of spherical silicon dioxide are connected to each other on substantially the same plane. Furthermore, "approximately the same plane" not only refers to the same plane, but can also mean vertical displacement from the same plane. For example, it can mean vertical displacement within 50% of the particle size of spherical silicon dioxide.

[0034] Regarding beaded silica, it is preferable that the ratio of the average particle size D1 measured by dynamic light scattering to the average particle size D2 obtained by the following formula (1) is 3 or more. There is no particular upper limit for D1 / D2, but it is preferable to be below 1000, even better to be below 800, and further better to be below 500. By setting D1 / D2 in such a range, good optical properties can be exhibited. Furthermore, the value of D1 / D2 in beaded silica is also an indicator of the degree of connection of spherical silica. D2=2720 / S ･･･ (1) Wherein, D2 is the average particle size of beaded silica in nm, and S is the specific surface area of ​​beaded silica measured by nitrogen adsorption in m2 / g.

[0035] The average particle size D2 of the beaded silica can be considered as an average particle size approximately similar to the diameter of the primary particles of spherical silica. An average particle size D2 of 1 nm or more is preferred, 3 nm or more is even more preferred, 5 nm or more is further preferred, and 7 nm or more is particularly preferred. As an upper limit, 100 nm or less is preferred, 80 nm or less is more preferred, 70 nm or less is further preferred, 60 nm or less is even more preferred, and 50 nm or less is particularly preferred.

[0036] The average particle size D2 can be replaced by the equivalent circle diameter (D0) in the projected image of the spherical portion measured by transmission electron microscopy (TEM). Unless otherwise stated, the average particle size based on the equivalent circle diameter is evaluated by averaging the number of 50 or more particles.

[0037] The average particle size D1 of the beaded silica can be considered as the number average particle size of secondary particles formed by the aggregation of a plurality of spherical silica particles. Therefore, the relationship D1 > D2 generally holds. An average particle size D1 of 5 nm or more is preferred, 7 nm or more is more preferred, and 10 nm or more is particularly preferred. As an upper limit, 100 nm or less is preferred, 70 nm or less is more preferred, 50 nm or less is further preferred, and 45 nm or less is particularly preferred.

[0038] Regarding the measurement of the average particle size D1 of beaded silica, unless otherwise specified, a dynamic light scattering particle size distribution measuring device (Nikkiso Co., Ltd., Microtrack UPA-EX150) is used. The procedure is as follows: The dispersion of beaded silica is aliquoted into a 20 ml sample vial and diluted with propylene glycol monomethyl ether to a solid content concentration of 0.2% by mass. The diluted sample solution is irradiated with 40 kHz ultrasound for 1 minute and then immediately used for testing. Data is collected 10 times using a 2 ml measuring quartz cell at 25°C, and the obtained "number average" is taken as the average particle size. Other detailed conditions are described in JIS Z 8828:2013 "Particle Size Analysis - Dynamic Light Scattering Method" as needed. Five samples are prepared for each level, and the average value is used.

[0039] Regarding beaded silica, it is preferable to connect a plurality of spherical silica particles with an average particle size of 1 to 80 nm via a connecting material. As an upper limit for the average particle size of the spherical silica, 70 nm or less is preferable, 60 nm or less is more preferable, and 50 nm or less is even more preferable. Furthermore, as a lower limit for the average particle size of the spherical silica, 3 nm or more is preferable, 5 nm or more is more preferable, and 7 nm or more is even more preferable. Moreover, in this invention, the value of the average particle size of the spherical silica is used based on the average particle size calculated from the equivalent circle diameter in the projected image of the spherical portion measured by a transmission electron microscope (TEM).

[0040] As a connecting material for linking spherical silicon dioxide particles in beaded silicon dioxide, silicon dioxide containing metal oxides can be cited. Examples of metal oxides include oxides of metals selected from Ca, Mg, Sr, Ba, Zn, Sn, Pb, Ni, Co, Fe, Al, In, Y, and Ti. Examples of silicon dioxide containing metal oxides include reactants and mixtures of such metal oxides and silicon dioxide (SiO2). For information on connecting materials, please refer to International Publication No. 2000 / 015552, which is incorporated herein by reference.

[0041] The number of spherical silica particles connected in the beaded silica is preferably 3 or more, and more preferably 5 or more. The upper limit is preferably 1000 or less, more preferably 800 or less, and further preferably 500 or less. The number of spherical silica particles connected can be measured by TEM.

[0042] Commercially available products containing bead-shaped silica particles include the SNOWTEX series and organic silica sol series manufactured by Nissan Chemical Industries, LTD. (examples include methanol dispersions, isopropanol dispersions, ethylene glycol dispersions, methyl ethyl ketone dispersions, etc. Product numbers IPA-ST-UP, MEK-ST-UP, etc.). Furthermore, as a product containing bead-shaped silica particles, silica sols as described in Japanese Patent No. 4328935 can be used, for example.

[0043] The average particle size of the hollow silica is preferably 10 to 500 nm. A lower limit of 15 nm or more is preferred, 20 nm or more is even more preferred, and 25 nm or more is further preferred. An upper limit of 300 nm or less is preferred, 200 nm or less is even more preferred, and 100 nm or less is further preferred. The average particle size of the hollow silica is a value measured by dynamic light scattering. Commercially available products containing hollow silica particle liquids include Thrylya 4110 manufactured by JGC Catalysts and Chemicals Ltd.

[0044] The average particle size of the solid silica particles is preferably 5 to 500 nm. A lower limit of 10 nm or more is preferred. An upper limit of 300 nm or less is preferred, 200 nm or less is more preferred, and 100 nm or less is further preferred. The average particle size of the solid silica particles is a value measured by dynamic light scattering. Commercially available particle liquids containing solid silica particles include MIBK-ST manufactured by Nissan Chemical Industries, Ltd.

[0045] The content of specific particles in the total solid composition of the composition is preferably 43% by mass or more, 50% by mass or more, more preferably 60% by mass or more, further preferably 70% by mass or more, even more preferably 80% by mass or more, and especially preferably 90% by mass or more. The upper limit is preferably 99% by mass or less, more preferably 98% by mass or less, and further preferably 95% by mass or less. Furthermore, the content of specific particles in the composition is preferably 3% by mass or more, more preferably 5% by mass or more, and further preferably 7% by mass or more. The upper limit is preferably 30% by mass or less, more preferably 20% by mass or less, and further preferably 15% by mass or less.

[0046] When silicon dioxide particles are used as specific particles, it is preferable that the content of the specific particles in the total solid composition of the composition is 43% by mass or more, more preferably 50% by mass or more, further preferably 60% by mass or more, even more preferably 70% by mass or more, even more preferably 80% by mass or more, and especially preferably 90% by mass or more. The upper limit is preferably 99% by mass or less, more preferably 98% by mass or less, and even more preferably 95% by mass or less. Furthermore, it is preferable that the content of silicon dioxide particles in the composition is 3% by mass or more, more preferably 5% by mass or more, and even more preferably 7% by mass or more. The upper limit is preferably 30% by mass or less, more preferably 20% by mass or less, and even more preferably 15% by mass or less. If the content of silicon dioxide particles is within the above range, it is easy to obtain a hardened film with low refractive index, high anti-reflective effect, and excellent moisture resistance.

[0047] Furthermore, considering the ease of obtaining a hardened film with low refractive index, high anti-reflective effect, and excellent moisture resistance, it is preferable that the content of silicon dioxide particles in the total amount of particles contained in the composition is 80% by mass or more, more preferably 90% by mass or more, and even more preferably 95% by mass or more. It is preferable that the composition contains essentially only silicon dioxide particles. Moreover, the case where the composition contains essentially only silicon dioxide particles refers to the case where the content of silicon dioxide particles in the total amount of particles is 99% by mass or more, more preferably 99.9% by mass or more, and even more preferably only silicon dioxide particles.

[0048] <<Generator>> The composition of the present invention contains at least one generator selected from the group including acid generators and alkali generators. It is preferable that the generator is substantially only an acid generator or substantially only an alkali generator; from the viewpoint of inhibiting damage to the film or corrosion of metal components, it is preferable that it is substantially only an alkali generator. Furthermore, in this specification, "the generator is substantially only an acid generator" means that the content of the acid generator in the total mass of the generator is 99% by mass or more, preferably 99.9% by mass or more, and more preferably 100% by mass (containing only an acid generator). Similarly, "the generator is substantially only an alkali generator" means that the content of the alkali generator in the total mass of the generator is 99% by mass or more, preferably 99.9% by mass or more, and more preferably 100% by mass (containing only an alkali generator).

[0049] (Acid Generating Agent) Examples of acid generating agents include thermal acid generating agents and photosensitive acid generating agents. It is preferable that the acid generating agent includes a photosensitive acid generating agent. Furthermore, the acid generating agent can be a combination of a photosensitive acid generating agent and a thermal acid generating agent. When a thermal acid generating agent and a photosensitive acid generating agent are used together, it is preferable that the mass ratio of the thermal acid generating agent to the photosensitive acid generating agent is 100 to 2000 parts by mass of the photosensitive acid generating agent per 100 parts by mass of the thermal acid generating agent. A lower limit of 150 parts by mass or more is preferable, and 200 parts by mass or more is more preferable. An upper limit of 1500 parts by mass or less is preferable, and 1000 parts by mass or less is more preferable. From the perspective of being able to form a film that allows for lower process temperatures and excellent moisture resistance, it is particularly preferable that the acid generating agent is essentially only a photosensitive acid generating agent. Furthermore, in this specification, the term "acid-generating agent that is essentially only a photoacid-generating agent" refers to a photoacid-generating agent content of 99% by mass or more in the total mass of the acid-generating agent, preferably 99.9% by mass or more, and even more preferably 100% by mass (containing only photoacid-generating agent). Furthermore, in this specification, "acid-generating agent" refers to a compound that generates acid by applying energy such as heat or light. Also, "thermal acid-generating agent" refers to a compound that generates acid through thermal decomposition. Also, "photoacid-generating agent" refers to a compound that generates acid through light irradiation.

[0050] The acid generating agent can be an ionic acid generating agent or a non-ionic acid generating agent, with a non-ionic acid generating agent being preferred. When a non-ionic acid generating agent is used as the acid generating agent, the malfunction of ionic impurities in such devices can be reduced when the composition of the present invention is used in a solid-state imaging element or an image display device.

[0051] It is preferable that the acid generating agent is a compound that generates an acid with a pKa of 4 or less, more preferably a compound that generates an acid with a pKa of 3 or less, and even more preferably a compound that generates an acid with a pKa of 2 or less. With this state, it is easy to form a hardened film with superior moisture resistance. Furthermore, in this specification, pKa basically refers to the pKa in water at 25°C. "Cannot be measured in water" refers to a measurer that uses a solvent suitable for measurement. Specifically, pKa can be found in chemical handbooks, etc. As an acid with a pKa of 3 or less, sulfonic acid or phosphonic acid is preferred, with sulfonic acid being more preferred.

[0052] It is preferable that the molecular weight of the acid generating agent is 200 to 1000. It is preferable that the lower limit is 230 or more. It is preferable that the upper limit is 800 or less. If the molecular weight of the acid generating agent is within the above range, the acid generating agent can be easily volatilized during baking or other processes during the manufacture of the hardened film, and residual acid generating agent or its decomposition products in the film can be suppressed.

[0053] -Hot Acid Generator- The acid generation temperature of the hot acid generator is preferably 80℃~130℃, and even better is 90℃~110℃.

[0054] The thermal acid generating agent is preferably a compound that generates low nucleophilic acids such as sulfonic acid, carboxylic acid, and disulfonylimidimide by heating. As the acid generated from the thermal acid generating agent, an acid with a pKa of 4 or less is preferred, an acid with a pKa of 3 or less is more preferred, and an acid with a pKa of 2 or less is even more preferred. For example, alkyl carboxylic acids, aryl carboxylic acids, and disulfonylimidimide substituted with sulfonic acid or electron-withdrawing groups are preferred. Examples of electron-withdrawing groups include halogen atoms such as fluorine atoms, haloalkyl groups such as trifluoromethyl groups, nitro groups, and cyano groups.

[0055] As a thermal acid generating agent, diazomethane compounds, sulfonate compounds, carboxylic acid ester compounds, phosphate compounds, urethane imine compounds, urethane benzotriazole compounds, strontium salts, etc. are examples, with sulfonate compounds and urethane imine compounds being preferred.

[0056] Furthermore, it is preferable that the thermal acid generating agent is a sulfonate compound that does not substantially produce acid upon irradiation with photochemical rays or radiation but produces acid upon heating. The fact that it does not substantially produce acid upon irradiation with photochemical rays or radiation can be determined by measuring the infrared absorption (IR) spectrum and nuclear magnetic resonance (NMR) spectrum of the compound before and after exposure, and by observing no change in the spectrum. It is preferable that the molecular weight of the aforementioned sulfonate compound is 230 to 1,000, and more preferably 230 to 800.

[0057] Examples of sulfonate compounds include tetraethylene glycol bis(p-toluenesulfonate), p-toluenesulfonate butyl ester, 4-hydroxyphenyl dimethyl strontium trifluoromethane sulfonate, benzyl-4-hydroxyphenyl methyl strontium trifluoromethane sulfonate, 2-methylbenzyl-4-hydroxyphenyl methyl strontium trifluoromethane sulfonate, 4-acetoxyphenyl dimethyl strontium trifluoromethane sulfonate, 4-acetoxyphenyl benzylmethyl strontium trifluoromethane sulfonate, 4-(methoxycarbonyloxy)phenyl dimethyl strontium trifluoromethane sulfonate, benzyl-4-(methoxycarbonyloxy)phenyl methyl strontium trifluoromethane sulfonate, etc.

[0058] Examples of succinimide compounds include N-(trifluoromethylsulfonyl)succinimide (product name "SI-105", Midori Kagaku Co., Ltd.), N-(camphorsulfonyl)succinimide (product name "SI-106", Midori Kagaku Co., Ltd.), and N-(4-methylphenylsulfonyl)succinimide (product name "SI-101", Midori Kagaku Co., Ltd.). Co., Ltd.), N-(2-trifluoromethylphenylsulfonyl)succinimide, N-(4-fluorophenylsulfonyl)succinimide, N-(trifluoromethylsulfonyl)phthalimide, N-(camphorsulfonyl)phthalimide, N-(2-trifluoromethylphenylsulfonyl)phthalimide, N-(2-fluorophenylsulfonyl)phthalimide, N-(trifluoromethylsulfonyl)diphenylcis-butene diimide (product name "PI-105", Midori Kagaku) Co., Ltd.), N-(camphorsulfonoxy)diphenylcis-butene diimide, 4-methylphenylsulfonoxy)diphenylcis-butene diimide, N-(2-trifluoromethylphenylsulfonoxy)diphenylcis-butene diimide, N-(4-fluorophenylsulfonoxy)diphenylcis-butene diimide, N-(4-fluorophenylsulfonoxy)diphenylcis-butene diimide, N-(phenylsulfonoxy)bicyclo[2.2.1]hept-5-ene-2,3-dicarboxylated diimide (product name "NDI-100", Midori Kagaku) Co., Ltd.), N-(4-methylphenylsulfonoxy)bicyclo[2.2.1]hept-5-en-2,3-dicarboxylated nitroimidine (product name "NDI-101", Midori Kagaku Co., Ltd.), N-(trifluoromethanesulfonoxy)bicyclo[2.2.1]hept-5-en-2,3-dicarboxylated nitroimidine (product name "NDI-105", Midori Kagaku Co., Ltd.), N-(nonafluorobutanesulfonoxy)bicyclo[2.2.1]hept-5-en-2,3-dicarboxylated nitroimidine (product name "NDI-109", Midori Kagaku Co., Ltd.), N-(nonafluorobutanesulfonoxy)bicyclo[2.2.1]hept-5-en-2,3-dicarboxylated nitroimidine (product name "NDI-109", Midori Kagaku Co., Ltd.), Co., Ltd.), N-(camphorsulfonoxy)bicyclo[2.2.1]hept-5-ene-2,3-dicarboxylated nitriloimide (product name "NDI-106", Midori Kagaku Co., Ltd.), N-(camphorsulfonoxy)-7-oxobicyclo[2.2.1]hept-5-ene-2,3-dicarboxylated nitriloimide, N-(trifluoromethylsulfonoxy)-7-oxobicyclo[2.2.1]hept-5-ene-2,3-dicarboxylated nitriloimide, N-(4-methylphenylsulfonoxy)bicyclo[2.2.1]hept-5-ene-2,3-dicarboxylated nitriloimide, N-(4-methylphenylsulfonoxy)bicyclo[2.2.1]hept-5-ene-2,3-dicarboxylated nitriloimide.1] Hepta-5-ene-2,3-dicarboxylated nimodiimide, N-(4-methylphenylsulfonoxy)-7-oxobicyclo[2.2.1]hepta-5-ene-2,3-dicarboxylated nimodiimide, N-(2-trifluoromethylphenylsulfonoxy)bicyclo[2.2.1]hepta-5-ene-2,3-dicarboxylated nimodiimide, N-(2-trifluoromethylphenylsulfonoxy)- 7-Oxybicyclo[2.2.1]hept-5-en-2,3-dicarboxylated nitroimidide, N-(4-fluorophenylsulfonoxy)bicyclo[2.2.1]hept-5-en-2,3-dicarboxylated nitroimidide, N-(4-fluorophenylsulfonoxy)-7-oxobicyclo[2.2.1]hept-5-en-2,3-dicarboxylated nitroimidide, N-(trifluoromethylsulfonoxy) Bicyclic [2.2.1]heptane-5,6-oxy-2,3-dicarboxylated nitroimidine, N-(camphorsulfonyloxy)bicyclic [2.2.1]heptane-5,6-oxy-2,3-dicarboxylated nitroimidine, N-(4-methylphenylsulfonyloxy)bicyclic [2.2.1]heptane-5,6-oxy-2,3-dicarboxylated nitroimidine, N-(2-trifluoro N-(4-fluorophenylsulfonyloxy)bicyclo[2.2.1]heptane-5,6-oxy-2,3-dicarboxylated nitriloimide, N-(trifluoromethylsulfonyloxy)naphthyldicarboxylated nitriloimide (product name "NAI-105", Midori) Midori Kagaku Co., Ltd.), N-(camphorsulfonoxy)naphthyldicarboxylated amide (product name "NAI-106", Midori Kagaku Co., Ltd.), N-(4-methylphenylsulfonoxy)naphthyldicarboxylated amide (product name "NAI-101", Midori Kagaku Co., Ltd.), N-(phenylsulfonoxy)naphthyldicarboxylated amide (product name "NAI-100", Midori Kagaku Co., Ltd.), Midori Kagaku Co., Ltd. N-(2-trifluoromethylphenylsulfonoxy)naphthyldicarboxylated amide, N-(4-fluorophenylsulfonoxy)naphthyldicarboxylated amide, N-(pentafluoroethylsulfonoxy)naphthyldicarboxylated amide, N-(heptafluoropropylsulfonoxy)naphthyldicarboxylated amide, N-(nonafluorobutylsulfonoxy)naphthyldicarboxylated amide (product name "NAI-109", Midori Kagaku Co., Ltd.), N-(ethylsulfonoxy)naphthyldicarboxylated amide, N-(propylsulfonoxy)naphthyldicarboxylated amide, N-(butylsulfonoxy)naphthyldicarboxylated amide (product name "NAI-1004", Midori Kagaku Co., Ltd.).Examples of N-(pentylsulfonylurea)naphthyldicarboxylated amides include: N-(hexylsulfonylurea)naphthyldicarboxylated amide, N-(heptylsulfonylurea)naphthyldicarboxylated amide, N-(octylsulfonylurea)naphthyldicarboxylated amide, and N-(nonylsulfonylurea)naphthyldicarboxylated amide.

[0059] Commercially available products that are heat acid generating agents include the SAN-AID series (e.g., SI-60, SI-80, SI-100, SI-200, SI-110, SI-145, SI-150, SI-60L, SI-80L, SI-100L, SI-110L, SI-145L, SI-150L, ​​SI-160L, SI-180L, etc.) manufactured by SANSHIN CHEMICAL INDUSTRY CO.,LTD., the TA-100 series manufactured by San-Apro Ltd., and the IK series manufactured by San-Apro Ltd., etc.

[0060] -Photoacid Generator- Regarding the photoacid generator, compounds that generate acid through induction with photochemical rays with a wavelength of 300 nm or higher, more preferably 300–450 nm, are preferred. It is more preferable that the photoacid generator is a compound that generates acid with a pKa of 4 or lower upon light irradiation, more preferably a compound that generates acid with a pKa of 3 or lower, and even more preferably a compound that generates acid with a pKa of 2 or lower. Furthermore, it is preferable that the photoacid generator does not generate acid below 130°C.

[0061] Examples of photoacid generators include oxime sulfonate compounds, trisulfonate compounds, strontium salts, monazite salts, quaternary ammonium salts, diazomethane compounds, sulfonate compounds, iminosulfonate compounds, carboxylic acid ester compounds, and urethane imine compounds. From the viewpoint of acid generation efficiency and solubility under exposure, it is preferable to select at least one from the group including oxime sulfonate compounds and trisulfonate compounds.

[0062] As an oxime sulfonate compound, a compound containing an oxime sulfonate structure represented by formula (B1-1) is preferred.

[0063] Formula (B1-1) [Chemical Formula 1] R21 in Formula (B1-1) represents alkyl or aryl. The wavy lines represent bonds with other groups.

[0064] The alkyl group represented by R21 is preferably a straight-chain or branched alkyl group having 1 to 10 carbon atoms. The aryl group represented by R21 is preferably an aryl group having 6 to 11 carbon atoms, and phenyl or naphthyl is more preferred. The aryl group of R21 can be substituted with a fluorine atom, an alkyl group, an alkoxy group, or a halogen atom. The alkyl group and aryl group represented by R21 can have substituents. Examples of substituents include halogen atoms, aryl groups having 6 to 11 carbon atoms, alkoxy groups having 1 to 10 carbon atoms, and cyclic alkyl groups (containing bridging alicyclic groups such as 7,7-dimethyl-2-oxobenzeneyl, preferably bicyclic alkyl groups). Examples of halogen atoms include fluorine atoms, chlorine atoms, bromine atoms, and iodine atoms, with fluorine atoms being preferred.

[0065] Examples of compounds containing an oxime sulfonate structure represented by formula (B1-1) include the oxime sulfonate compounds described in paragraphs 0081 to 0108 of Japanese Patent Application Publication No. 2013-210616, which are incorporated herein by reference.

[0066] As specific examples of oxime sulfonate compounds, compounds with structures described in the examples described later can be cited.

[0067] As trichlorophenyl compounds, examples include compounds with structures described in the embodiments below, 2-(3-chlorophenyl)-bis(4,6-trichloromethyl)-symmetric trichlorophenyl, 2-(4-methoxyphenyl)-bis(4,6-trichloromethyl)-symmetric trichlorophenyl, 2-(4-methylphenylthio)-bis(4,6-trichloromethyl)-symmetric trichlorophenyl, 2-(4-methoxy-β-styrene)-bis(4,6-trichloromethyl)-symmetric trichlorophenyl, 2-piperyl-bis( 4,6-trichloromethyl)-symmetric trichlorotri ...

[0068] Examples of ferric salts include diphenyliodotrifluoroacetate, diphenyliodotrifluoromethane sulfonate, 4-methoxyphenylphenyliodotrifluoromethane sulfonate, 4-methoxyphenylphenyliodotrifluoroacetate, phenyl-4-(2'-hydroxy-1'-tetradecoxy)phenyliodotrifluoromethane sulfonate, 4-(2'-hydroxy-1'-tetradecoxy)phenyliodohexafluoroantimonate, and phenyl-4-(2'-hydroxy-1'-tetradecoxy)phenyliodo-p-toluenesulfonate.

[0069] Examples of strontium salts include triphenylstrontium trifluoromethane sulfonate, triphenylstrontium trifluoroacetate, 4-methoxyphenyl diphenylstrontium trifluoromethane sulfonate, 4-methoxyphenyl diphenylstrontium trifluoroacetate, 4-phenylthiophenyl diphenylstrontium trifluoromethane sulfonate, and 4-phenylthiophenyl diphenylstrontium trifluoroacetate.

[0070] As quaternary ammonium salts, examples include tetramethylammonium butyltris(2,6-difluorophenyl)borate, tetramethylammonium hexyltris(p-chlorophenyl)borate, tetramethylammonium hexyltris(3-trifluoromethylphenyl)borate, benzyldimethylphenylammonium butyltris(2,6-difluorophenyl)borate, benzyldimethylphenylammonium hexyltris(p-chlorophenyl)borate, and benzyldimethylphenylammonium hexyltris(3-trifluoromethylphenyl)borate.

[0071] Examples of diazomethane compounds include bis(trifluoromethylsulfonyl)diazomethane, bis(cyclohexylsulfonyl)diazomethane, bis(phenylsulfonyl)diazomethane, bis(4-tolylsulfonyl)diazomethane, bis(2,4-dimethylsulfonyl)diazomethane, bis(4-chlorophenylsulfonyl)diazomethane, methylsulfonyl-4-tolylsulfonyldiazomethane, cyclohexylsulfonyl(1,1-dimethylethylsulfonyl)diazomethane, bis(1,1-dimethylethylsulfonyl)diazomethane, and phenylsulfonyl(benzoyl)diazomethane.

[0072] Examples of ion compounds include β-keto ion compounds, β-sulfonyl ion compounds, and diaryl diion compounds. Preferred ion compounds include 4-tolylbenzene ion, trimethylbenzene ion, bis(phenylsulfonyl)methane, and 4-chlorophenyl-4-tolyl diion compounds.

[0073] As sulfonate compounds, examples include benzoin-4-tolyl sulfonate, gallnut phenol tris(methyl sulfonate), nitrobenzyl-9,10-diethoxyanthrayl-2-sulfonate, and 2,6-(dinitrobenzyl)phenyl sulfonate.

[0074] Examples of iminosulfonate compounds include benzyl monooxime-4-tolyl sulfonate, benzyl monooxime-4-dodecanephenyl sulfonate, benzyl monooxime hexadecane sulfonate, 4-nitroacetophenone oxime-4-tolyl sulfonate, 4,4'-dimethylbenzyl monooxime-4-tolyl sulfonate, 4,4'-dimethylbenzyl monooxime-4-dodecanephenyl sulfonate, dibenzyl ketone oxime-4-tolyl sulfonate, and α-(4-tolyl) α-(4-tolylsulfonyl)imino-α-cyanoethyl acetate, furanyl monooxime-4-(aminocarbonyl)phenylsulfonate, acetone oxime-4-benzylphenylsulfonate, 3-(benzylsulfonyl)iminoacetoacetone, bis(benzyl monooxide)dioctylnaphthyl disulfonate, α-(4-tolylsulfonyl)iminobenzyl cyanide, α-(4-tolylsulfonyl)imino-4-methoxybenzyl cyanide (“PAI-101”, product name, Midori) (Manufactured by Kagaku Co., Ltd.), α-(10-camphorsulfonoxy)imino-4-methoxybenzyl cyanide (“PAI-106”, product name, manufactured by Midori Kagaku Co., Ltd.), 5-(4-tolylsulfonoxy)imino-5H-thiophene-2-ylidene-(2-methylphenyl)acetonitrile (“CGI-1311”, product name, manufactured by BASF), etc.

[0075] Examples of carboxylic acid esters include 2-nitrobenzyl carboxylic acid.

[0076] Examples of succinimide compounds include N-(trifluoromethylsulfonyl)succinimide, N-(10-camphorsulfonyl)succinimide, N-(4-tolylsulfonyl)succinimide, N-(2-trifluoromethylphenylsulfonyl)succinimide, N-(4-fluorophenylsulfonyl)succinimide, and N- (Trifluoromethylsulfonyl)phthalimide, N-(10-camphorsulfonyl)phthalimide, N-(2-trifluoromethylphenylsulfonyl)phthalimide, N-(2-fluorophenylsulfonyl)phthalimide, N-(trifluoromethylsulfonyl)diphenylcis-butenediimide, N-(10-camphorsulfonyl) N-(2-trifluoromethylphenylsulfonyl)diphenylbutene diimide, N-(4-fluorophenylsulfonyl)diphenylbutene diimide, N-(4-fluorophenylsulfonyl)diphenylbutene diimide, N-(4-fluorophenylsulfonyl)diphenylbutene diimide, N-(4-fluorophenylsulfonyl)diphenylbutene diimide, N-(4-fluorophenylsulfonyl)diphenylbutene diimide, N-(4-fluorophenylsulfonyl)diphenylbutene diimide Bicyclic [2.2.1]hepten-5-ene-2,3-dicarboxylated nitroimidide, N-(10-camphorsulfonoxy)bicyclic [2.2.1]hepten-5-ene-2,3-dicarboxylated nitroimidide, N-(camphorsulfonoxy)-7-oxobicyclic [2.2.1]hepten-5-ene-2,3-dicarboxylated nitroimidide, N-(trifluoromethylsulfonoxy)- 7-Oxybicyclo[2.2.1]hept-5-en-2,3-dicarboxypropylimine, N-(4-tolylsulfonoxy)bicyclo[2.2.1]hept-5-en-2,3-dicarboxypropylimine, N-(4-tolylsulfonoxy)-7-oxobicyclo[2.2.1]hept-5-en-2,3-dicarboxypropylimine, N-(2-trifluoro N-(2-trifluoromethylphenylsulfonoxy)-7-oxobicyclo[2.2.1]hept-5-ene-2,3-dicarboxylated nitroimidide, N-(4-fluorophenylsulfonoxy)bicyclo[2.2.1]hept-5-ene-2,3-dicarboxylated nitroimidide 、N-(4-fluorophenylsulfonoxy)-7-oxobicyclo[2.2.1]heptane-5-ene-2,3-dicarboxylated nimodiimide, N-(trifluoromethylsulfonoxy)bicyclo[2.2.1]heptane-5,6-oxy-2,3-dicarboxylated nimodiimide, N-(10-camphorsulfonoxy)bicyclo[2.2.1]heptane-5,6-oxy-2,3-dicarboxylated nimodiimide, N-(4-tolylsulfonoxy)bicyclo[2.2.1]heptane-5,6-oxy-2,3-dicarboxylated nimodiimide, N-(2-trifluoromethylphenylsulfonoxy)bicyclo[2.2.1]heptane-5,6-oxy-2,3-dicarboxylated nimodiimide, N-(4-fluoro ...1] Heptane-5,6-oxy-2,3-dicarboxylic amide, N-(trifluoromethylsulfonylurea)naphthyldicarboxylic amide, N-(10-camphorsulfonylurea)naphthyldicarboxylic amide, N-(4-tolylsulfonylurea)naphthyldicarboxylic amide, N-(2-trifluoromethylphenylsulfonylurea)naphthyldicarboxylic amide, N-(4-fluorophenylsulfonylurea)naphthyldicarboxylic amide, N-(pentafluoroethylsulfonylurea)naphthyldicarboxylic amide, N-(heptafluoropropylsulfonylurea)naphthyldicarboxylic amide Amines, N-(nonafluorobutylsulfonyl)naphthyldicarboxylated amide, N-(ethylsulfonyl)naphthyldicarboxylated amide, N-(propylsulfonyl)naphthyldicarboxylated amide, N-(butylsulfonyl)naphthyldicarboxylated amide, N-(pentylsulfonyl)naphthyldicarboxylated amide, N-(hexylsulfonyl)naphthyldicarboxylated amide, N-(octylsulfonyl)naphthyldicarboxylated amide, N-(nonylsulfonyl)naphthyldicarboxylated amide, etc.

[0077] (Alkali Generating Agent) Examples of alkali generating agents include thermal alkali generating agents and photoalkali generating agents. It is preferable that the alkali generating agent includes a photoalkali generating agent. Furthermore, the alkali generating agent can be combined with both a photoalkali generating agent and a thermal alkali generating agent. When both a thermal alkali generating agent and a photoalkali generating agent are used, it is preferable that the mass ratio of the thermal alkali generating agent to the photoalkali generating agent is 100 to 2000 parts by mass of the photoalkali generating agent per 100 parts by mass of the thermal alkali generating agent. A lower limit of 150 parts by mass or more is preferable, and 200 parts by mass or more is more preferable. An upper limit of 1500 parts by mass or less is preferable, and 1000 parts by mass or less is more preferable. From the perspective of being able to form a film that allows for lower process temperatures and excellent moisture resistance, it is particularly preferable that the alkali generating agent is essentially only a photoalkali generating agent. Furthermore, in this specification, the term "alkali-generating agent" essentially referring to a photoalkali-generating agent content of 99% by mass or more in the total mass of the alkali-generating agent, preferably 99.9% by mass or more, and even more preferably 100% by mass (containing only photoalkali-generating agent). Furthermore, in this specification, "alkali-generating agent" refers to a compound that generates alkali by applying energy such as heat or light. Also, "thermal alkali-generating agent" refers to a compound that generates alkali through thermal decomposition. Also, "photoalkali-generating agent" refers to a compound that generates alkali through light irradiation.

[0078] The alkali generating agent can be an ionic alkali generating agent or a non-ionic alkali generating agent, with a non-ionic alkali generating agent being preferred. When a non-ionic alkali generating agent is used as an acid generating agent, the malfunction of ionic impurities in such devices can be reduced when the composition of the present invention is used in a solid-state imaging element or an image display device.

[0079] The alkali generated from the alkali generating agent can be any of a primary, secondary, or tertiary amine; however, from the viewpoint of stability over the service life, a tertiary amine is preferred. Furthermore, the boiling point of the alkali generated by the alkali generating agent is preferably 80°C or higher, preferably 100°C or higher, and most preferably 140°C or higher. Also, the molecular weight of the generated alkali is preferably 80 to 2000. A lower limit of 100 or higher is more preferred, and an upper limit of 500 or lower is more preferred. Moreover, the molecular weight value is a theoretical value derived from the structural formula.

[0080] The molecular weight of the alkali generating agent is preferably 200 to 1000. The lower limit is preferably 230 or higher. The upper limit is preferably 800 or lower. If the molecular weight of the alkali generating agent is within the above range, the alkali generating agent can be easily volatilized during baking or other processes during the manufacture of the hardened film, and residual alkali generating agent or its decomposition products in the film can be suppressed.

[0081] -Hot Alkali Generating Agent- The alkali generating temperature of the hot alkali generating agent is preferably 80℃~130℃, and even better is 90℃~110℃.

[0082] Examples of thermal alkali generating agents include aminomethyloxime compounds, aminomethylhydroxylamine compounds, carbamic acid compounds, methylamine compounds, acetamide compounds, carbamate compounds, benzyl carbamate compounds, nitrobenzyl carbamate compounds, sulfonic acid amide compounds, imidazole compounds, aminoimine compounds, pyridine compounds, α-aminoacetophenone compounds, quaternary ammonium salt compounds, pyridinium salts, α-lactone ring derivative compounds, aminoimine compounds, phthalimine compounds, and acetoylimine compounds.

[0083] Furthermore, the hot alkali generating agent can also use acidic compounds that produce alkali when heated to above 40°C, and ammonium salts of anions and ammonium cations having a pKa1 of 0 to 4. Regarding such compounds, examples can be found in paragraphs 0045 to 0066 of International Publication No. 2017 / 141723, the contents of which are incorporated herein by reference. Moreover, in this specification, acidic compounds refer to compounds in which 1 g of the compound is extracted into a container, 50 mL of a mixture of ion-exchanged water and tetrahydrofuran (mass ratio of water / tetrahydrofuran = 1 / 4) is added, the mixture is stirred at room temperature for 1 hour, and the pH value of the solution measured at 20°C using a pH meter does not reach 7.

[0084] Commercially available products that are heat alkali generating agents include the U-CAT series manufactured by San-Apro Ltd. (e.g., SA1, SA102, SA603, SA810, SA831, SA841, SA851, SA838A, etc.).

[0085] -Photoalkali generating agent- Regarding the photoalkali generating agent, it is preferable to be a compound that generates alkali by induction with photochemical rays with a wavelength of 300 nm or higher, more preferably 300-450 nm. Furthermore, it is preferable to be a compound that does not generate alkali below 130°C.

[0086] As a photoalkali generating agent, examples include carbamate compounds, sulfonamide compounds, and acetooxime compounds, preferably selected from at least one of the group including carbamate compounds and acetooxime compounds.

[0087] Examples of carbamate compounds include N-(2-nitrobenzyloxy)carbonyl-N-methylamine, N-(2-nitrobenzyloxy)carbonyl-N-n-propylamine, N-(2-nitrobenzyloxy)carbonyl-N-n-hexylamine, N-(2-nitrobenzyloxy)carbonyl-N-cyclohexylamine, N-(2-nitrobenzyloxy)carbonylaniline, N-(2-nitrobenzyloxy)carbonylpiperidine, N,N'-bis[(2-nitrobenzyloxy)carbonyl]-1,6-hexamethylenediamine, N,N'-bis[(2-nitrobenzyloxy)carbonyl]-1,4-epenylphenyldiamine, N,N'-bis[(2-nitrobenzyloxy)carbonyl]-2,4-toluenediamine, and N,N'-bis[(2-nitrobenzyloxy)carbonyl]-2,4-toluenediamine. N,N'-bis[(2-nitrobenzyloxy)carbonyl]piperidine, N-(2,6-dinitrobenzyloxy)carbonyl-N-methylamine, N-(2,6-dinitrobenzyloxy)carbonyl-N-n-propylamine, N-(2,6-dinitrobenzyloxy)carbonyl-N-n-hexylamine, N-(2,6-dinitrobenzyloxy)carbonyl-N-cyclohexylamine, N-(2,6-dinitrobenzyloxy)carbonylaniline, N-(2,6-dinitrobenzyloxy)carbonylpiperidine, N,N'-bis[(2,6-dinitrobenzyloxy)carbonyl]-1,6-hexamethylenediamine, N,N'-bis[(2,6-dinitrobenzyloxy)carbonyl]-1,4-epenylphenyldiamine, N,N '-bis[(2,6-dinitrobenzyloxy)carbonyl]-2,4-toluenediamine, N,N'-bis[(2,6-dinitrobenzyloxy)carbonyl]-4,4-diaminodiphenylmethane, N,N'-bis[(2,6-dinitrobenzyloxy)carbonyl]piperazine, N-(α,α-dimethyl-3,5-dimethoxybenzyloxy)carbonyl-N-methylamine, N-(α,α-dimethyl-3,5-dimethoxybenzyloxy)carbonyl-Nn-propylamine, N-(α,α-dimethyl-3,5-dimethoxybenzyloxy)carbonyl-N-n-hexylamine, N-(α,α-dimethyl-3,5-dimethoxybenzyloxy)carbonyl-N-cyclo ... Examples of such products include: N-(α,α-dimethyl-3,5-dimethoxybenzyloxy)carbonylpiperidine, N,N'-bis[(α,α-dimethyl-3,5-dimethoxybenzyloxy)carbonyl]-1,6-hexamethylenediamine, N,N'-bis[(α,α-dimethyl-3,5-dimethoxybenzyloxy)carbonyl]-1,4-epenylphenyldiamine, N,N'-bis[(α,α-dimethyl-3,5-dimethoxybenzyloxy)carbonyl]-2,4-toluenediamine, N,N'-bis[(α,α-dimethyl-3,5-dimethoxybenzyloxy)carbonyl]-4,4'-diaminodiphenylmethane, and N,N'-bis[(α,α-dimethyl-3,5-dimethoxybenzyloxy)carbonyl]piperidine, etc.

[0088] Furthermore, it is preferable that the carbamate compound is represented by formula (PBG-1). [Chemical Formula 2]

[0089] In formula (PEG-1), Ra and Rb independently represent hydrogen atoms or monovalent organic groups, Ra and Rb can bond with each other to form cyclic amine groups, Rc represents hydrogen atoms or methyl groups, and Ara represents aromatic groups.

[0090] As the monovalent organic groups represented by Ra and Rb, examples include aliphatic hydrocarbon groups, aromatic hydrocarbon groups, or groups composed of combinations thereof. It is preferred that the aliphatic hydrocarbon group has 1 to 20 carbon atoms, further preferred that it has 1 to 10 carbon atoms, and particularly preferred that it has 1 to 5 carbon atoms. The aliphatic hydrocarbon group can be any of straight-chain, branched, or cyclic. Furthermore, cyclic aliphatic hydrocarbon groups can be any of monocyclic or polycyclic. Examples of aliphatic hydrocarbon groups include alkyl, alkenyl, and alkynyl groups. It is preferred that the aromatic hydrocarbon group has 6 to 18 carbon atoms, more preferably 6 to 14 carbon atoms, and further preferred that it has 6 to 10 carbon atoms. It is preferred that the aromatic hydrocarbon group is a monocyclic aromatic hydrocarbon group or an aromatic hydrocarbon group with a condensation ring number of 2 to 4. Examples of aromatic hydrocarbon groups include aryl groups. Aliphatic hydrocarbon groups and aromatic hydrocarbon groups may also have substituents. Examples of substituents T described later are examples of substituents.

[0091] It is preferable that Ra and Rb are each independently aliphatic hydrocarbon groups, more preferably alkyl, further preferably straight-chain or branched alkyl with 1 to 10 carbons, even more preferably straight-chain or branched alkyl with 1 to 5 carbons, and especially preferably methyl, ethyl or isopropyl.

[0092] Ra and Rb can bond to each other to form a cyclic amino group. Examples of cyclic amino groups include 1-aziridinyl, 1-oxacyclobutyl, 1-pyrrolidinyl, 1-piperidinyl, 1-hexamethyleneimino, 1-heptamethyleneimino, 1-octamethyleneimino, 1-nonamethyleneimino, 1-1-imidazolyl, 4,5-dihydroxy-1-imidazolyl, 1-pyrroleyl, 1-pyrazolyl, 1-imidazolyl, 1-piperazinyl group, and uranyl. The cyclic amino group formed by the bonding of Ra and Rb can have substituents. Examples of substituents T mentioned later can be included.

[0093] The aromatic group represented by Ara can be an aromatic hydrocarbon group or an aromatic heterocyclic group. The aromatic group represented by Ara can be a monocyclic aromatic group, and it is preferred to be an aromatic group with a condensation ring number of 2 to 4. Examples of aromatic hydrocarbon groups include benzene ring group, naphthyl ring group, anthracene ring group, and fumonisin ring group. Examples of aromatic heterocyclic groups include pyrrole ring group, furan ring group, thiophene ring group, pyridine ring group, imidazole ring group, pyrazole ring group, acetazole ring group, thiazole ring group, pyridinium ring group, pyridine ring group, indole ring group, isoindole ring group, benzimidazole ring group, benzoacetazole ring group, benzothiazole ring group, benzotriazole ring group, quinoline ring group, isoquinoline ring group, quinazoline ring group, quinazoline ring group, and anthraquinone ring group. The aromatic group represented by Ara can have substituents. Examples of substituents, such as those exemplified by substituent T, will be given later.

[0094] The following groups can be used as the substituent T mentioned above: halogen atom (e.g., fluorine atom, chlorine atom, bromine atom, iodine atom), alkyl (preferably alkyl with 1 to 30 carbon atoms), alkenyl (preferably alkenyl with 2 to 30 carbon atoms), alkynyl (preferably alkynyl with 2 to 30 carbon atoms), aryl (preferably aryl with 6 to 30 carbon atoms), heterocyclic (preferably heterocyclic with 1 to 30 carbon atoms), amino (preferably amino with 0 to 30 carbon atoms), alkoxy (preferably alkoxy with 1 to 30 carbon atoms), aryloxy (preferably aryloxy with 6 to 30 carbon atoms), heterocyclic (preferably heterocyclic with 1 to 30 carbon atoms), acetyl (preferably acetyl with 2 to 30 carbon atoms), alkoxycarbonyl (preferably alkane with 2 to 30 carbon atoms). Oxycarbonyl), aryloxycarbonyl (preferably aryloxycarbonyl with 7 to 30 carbon atoms), heterocyclic oxygen carbonyl (preferably heterocyclic oxygen carbonyl with 2 to 30 carbon atoms), aceoxy (preferably aceoxy with 2 to 30 carbon atoms), aceamino (preferably aceamino with 2 to 30 carbon atoms), aminocarbonylamino (preferably aminocarbonylamino with 2 to 30 carbon atoms), alkoxycarbonylamino (preferably alkoxycarbonylamino with 2 to 30 carbon atoms), aryloxycarbonylamino (preferably aryloxycarbonylamino with 7 to 30 carbon atoms), aminosulfonyl (preferably aminosulfonylamino with 0 to 30 carbon atoms), aminosulfonylamino (preferably aminosulfonylamino with 0 to 30 carbon atoms), aminomethylamino (preferably with 7 to 30 carbon atoms) The following groups are listed: 1-30 aminomethyl, alkylthio (preferably alkylthio with 1-30 carbon atoms), arylthio (preferably arylthio with 6-30 carbon atoms), heterocyclic thio (preferably heterocyclic thio with 1-30 carbon atoms), alkylsulfonyl (preferably alkylsulfonyl with 1-30 carbon atoms), alkylsulfonylamino (preferably alkylsulfonylamino with 1-30 carbon atoms), arylsulfonyl (preferably arylsulfonyl with 6-30 carbon atoms), arylsulfonylamino (preferably arylsulfonylamino with 6-30 carbon atoms), heterocyclic sulfonyl (preferably heterocyclic sulfonyl with 1-30 carbon atoms), heterocyclic sulfonylamino (preferably heterocyclic sulfonylamino with 1-30 carbon atoms), alkyl The group comprises sulfinyl (preferably an alkylsulfinyl group with 1 to 30 carbon atoms), arylsulfinyl (preferably an arylsulfinyl group with 6 to 30 carbon atoms), heterocyclic sulfinyl (preferably a heterocyclic sulfinyl group with 1 to 30 carbon atoms), ureyl (preferably a ureyl group with 1 to 30 carbon atoms), hydroxyl, nitro, carboxyl, sulfonyl, phosphate, carboxylic acid amino, sulfonic acid amino, phosphinyl, mercapto, cyano, alkyl sulfinic acid, aryl sulfinic acid, aryl azo, heterocyclic azo, oxophosphinyl, oxophosphinyloxy, oxophosphinylamino, silylalkyl, hydrazyl, imino, vinyl, styryl, (methyl)allyl, (meth)acrylyl, and (meth)acryloxy. When these groups are substitutable, they may also contain substituents.

[0095] As a specific example of a compound represented by formula (PBG-1), compounds with structures described in the examples described later can be cited.

[0096] Examples of acetoxime compounds include acetophenone-O-propylated oxime, benzophenone-O-propylated oxime, acetone-O-propylated oxime, acetophenone-O-butylated oxime, benzophenone-O-butylated oxime, acetone-O-butylated oxime, bis(acetophenone)-O,O'-hexane-1,6-dioleoyl oxime, bis(benzophenone)-O,O'-hexane-1,6-dioleoyl oxime, bis(acetone)-O,O'-hexane-1,6-dioleoyl oxime, acetophenone-O-propenylated oxime, benzophenone-O-propenylated oxime, and acetone-O-propenylated oxime.

[0097] Commercially available photoalkali generators include the WPBG series from FUJIFILM Wako Pure Chemical Corporation (e.g., WPBG-018, WPBG-027, WPBG-082, WPBG-140, WPBG-165, WPBG-167, WPBG-168, WPBG-140, etc.).

[0098] The content of the generating agent in the total solids composition of the composition is preferably 1 to 15% by mass, and 1 to 10% by mass is more preferred considering the ease of forming a hardened film with excellent moisture resistance and low refractive index. A lower limit of 2% by mass or more is preferred, and 2.5% by mass or more is more preferred. An upper limit of 9% by mass or less is preferred, and 8% by mass or less is more preferred. Furthermore, the total content of the specific particles (particles with silanol groups) and the generating agent in the total solids composition of the composition is preferably 45 to 99% by mass. A lower limit of 60% by mass or more is preferred, and 80% by mass or more is more preferred. An upper limit of 98% by mass or less is preferred, and 97% by mass or less is more preferred.

[0099] When an acid generating agent is used as the generating agent, the content of the acid generating agent (preferably the content of a photoacid generating agent) in the total solids composition of the composition is preferably 1 to 15% by mass, and 1 to 10% by mass is more preferred from the perspective of easily forming a hardened film with excellent moisture resistance and low refractive index. A lower limit of 2% by mass or more is preferred, and 2.5% by mass or more is more preferred. An upper limit of 9% by mass or less is preferred, and 8% by mass or less is more preferred. Furthermore, the total content of the specific particles and the acid generating agent in the total solids composition of the composition is preferably 45 to 99% by mass. A lower limit of 60% by mass or more is preferred, and 80% by mass or more is more preferred. An upper limit of 98% by mass or less is preferred, and 97% by mass or less is more preferred. Furthermore, the total content of the specific particles and the photoacid generating agent in the total solids composition of the composition is preferably 45 to 99% by mass. A lower limit of 60% by mass or more is preferred, and 80% by mass or more is more preferred. A mass percentage of 98% or less is considered better, and a mass percentage of 97% or less is considered even better.

[0100] When an alkali generating agent is used as the generating agent, the content of the alkali generating agent (preferably the content of a photoalkali generating agent) in the total solids composition of the composition is preferably 1 to 15% by mass, and 1 to 10% by mass is more preferred from the perspective of easily forming a hardened film with excellent moisture resistance and low refractive index. A lower limit of 2% by mass or more is preferred, and 2.5% by mass or more is more preferred. An upper limit of 9% by mass or less is preferred, and 8% by mass or less is more preferred. Furthermore, the total content of the specific particles and the alkali generating agent in the total solids composition of the composition is preferably 45 to 99% by mass. A lower limit of 60% by mass or more is preferred, and 80% by mass or more is more preferred. An upper limit of 98% by mass or less is preferred, and 97% by mass or less is more preferred. Furthermore, the total content of the specific particles and the photoalkali generating agent in the total solids composition of the composition is preferably 45 to 99% by mass. A lower limit of 60% by mass or more is preferred, and 80% by mass or more is more preferred. A mass percentage of 98% or less is considered better, and a mass percentage of 97% or less is considered even better.

[0101] <<Solvent>> The composition of the present invention contains a solvent. Examples of solvents include organic solvents and water, with at least an organic solvent being preferred. Examples of organic solvents include aliphatic hydrocarbon solvents, halogenated hydrocarbon solvents, alcohol solvents, ether solvents, ester solvents, ketone solvents, nitrile solvents, amide solvents, sulfide solvents, and aromatic solvents.

[0102] Examples of aliphatic hydrocarbon solvents include hexane, cyclohexane, methylcyclohexane, pentane, cyclopentane, heptane, and octane.

[0103] As a halogenated hydrocarbon solvent, examples include dichloromethane, chloroform, dichloroethane, carbon tetrachloride, trichloroethylene, tetrachloroethylene, epichlorohydrin, monochlorobenzene, o-dichlorobenzene, chloropropene, methyl monochloroacetate, ethyl monochloroacetate, monochloroacetic acid, trichloroacetic acid, bromomethane, tri(tetra)chloroethylene, etc.

[0104] Examples of alcohol solvents include methanol, ethanol, 1-propanol, 2-propanol, 2-butanol, ethylene glycol, propylene glycol, glycerol, 1,6-hexanediol, cyclohexanediol, sorbitol, xylitol, 2-methyl-2,4-pentanediol, 3-methoxy-1-butanol, 1,3-butanediol, and 1,4-butanediol.

[0105] Examples of ether solvents include dimethyl ether, diethyl ether, diisopropyl ether, dibutyl ether, tributyl methyl ether, cyclohexyl methyl ether, anisole, tetrahydrofuran, diethylene glycol, triethylene glycol, polyethylene glycol, dipropylene glycol, ethylene glycol monomethyl ether, ethylene glycol monobutyl ether, ethylene glycol monophenyl ether, propylene glycol monomethyl ether, propylene glycol monoethyl ether, propylene glycol monopropyl ether, propylene glycol monobutyl ether, diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, and diethylene glycol monopropyl ether. Diethylene glycol monobutyl ether, diethylene glycol dimethyl ether, diethylene glycol diethyl ether, diethylene glycol dipropyl ether, diethylene glycol dibutyl ether, diethylene glycol dimethyl ether, dipropylene glycol dimethyl ether, dipropylene glycol monoethyl ether, dipropylene glycol monopropyl ether, dipropylene glycol monobutyl ether, dipropylene glycol methyl-n-propyl ether, triethylene glycol monomethyl ether, triethylene glycol monobutyl ether, tripropylene glycol monomethyl ether, tripropylene glycol monobutyl ether, tetraethylene glycol dimethyl ether, polyethylene glycol monomethyl ether, polyethylene glycol dimethyl ether, etc.

[0106] As ester solvents, examples include propylene carbonate, dipropylene, 1,4-butanediol diacetate, 1,3-butanediol diacetate, 1,6-hexanediol diacetate, cyclohexanol acetate, dipropylene glycol methyl ether acetate, methyl acetate, ethyl acetate, isopropyl acetate, n-propyl acetate, butyl acetate, ethylene glycol monomethyl ether acetate, propylene glycol monomethyl ether acetate, 3-methoxybutyl acetate, ethylene glycol monobutyl ether acetate, diethylene glycol monoethyl ether acetate, diethylene glycol monobutyl ether acetate, triacetyl glycerol, etc.

[0107] As ketone solvents, examples include acetone, methyl ethyl ketone, methyl isobutyl ketone, cyclopentanone, cyclohexanone, 2-heptanone, etc.

[0108] As a nitrile solvent, acetonitrile can be cited as an example.

[0109] Examples of acetylamine solvents include N,N-dimethylformamide, 1-methyl-2-pyrrolidone, 2-pyrrolidone, 1,3-dimethyl-2-imidazolidineone, ε-caprolactam, methylamine, N-methylformamide, acetamide, N-methylacetamide, N,N-dimethylacetamide, N-methylpropionic acid, trimethylammonium hexamethylphosphate, 3-methoxy-N,N-dimethylpropionic acid, and 3-butoxy-N,N-dimethylpropionic acid.

[0110] As a sulphine solvent, dimethyl sulphine and the like can be cited.

[0111] As aromatic solvents, examples include benzene and toluene.

[0112] Considering the ease of forming a film that further suppresses the generation of uneven thickness or defects, it is preferable to use an alcohol-based solvent. The alcohol-based solvent is preferably selected from at least one of methanol, ethanol, 1-propanol, 2-propanol, and 2-butanol, and more preferably from at least one of methanol and ethanol. Among these, it is preferable that the alcohol-based solvent contains at least methanol, and considering the ease of forming a film that further suppresses the generation of defects, it is even more preferable that it contains both methanol and ethanol.

[0113] The solvent content in the composition is preferably 70-99% by mass. The upper limit is preferably 93% by mass or less, more preferably 92% by mass or less, and even more preferably 90% by mass or less. The lower limit is preferably 75% by mass or more, more preferably 80% by mass or more, and even more preferably 85% by mass or more.

[0114] Furthermore, the content of alcohol solvents in the total solvent volume is preferably 0.1% to 10% by mass. The upper limit is preferably 8% by mass or less, more preferably 6% by mass or less, and further preferably 4% by mass or less. The lower limit is preferably 0.3% by mass or more, more preferably 0.5% by mass or more, and further preferably 1% by mass or more. There may be only one type of alcohol solvent, or two or more types may be used together. When the composition of the present invention contains two or more types of alcohol solvents, it is preferable that their total content is within the above-mentioned range.

[0115] Solvents containing solvent A1 with a boiling point of 190°C or higher and 280°C or lower are preferred. Furthermore, in this specification, the boiling point of the solvent is the value at 1 atmosphere (0.1 MPa).

[0116] It is preferable that the boiling point of solvent A1 is above 200°C, more preferably above 210°C, and even more preferably above 220°C. Furthermore, it is preferable that the boiling point of solvent A1 is below 270°C, and even more preferably below 265°C.

[0117] It is preferable that the viscosity of solvent A1 is 10 mPa·s or less, more preferably 7 mPa·s or less, and even more preferably 4 mPa·s or less. From the viewpoint of coatability, it is preferable that the lower limit of the viscosity of solvent A1 is 1.0 mPa·s or more, more preferably 1.4 mPa·s or more, and even more preferably 1.8 mPa·s or more.

[0118] It is preferable that the molecular weight of solvent A1 is 100 or higher, more preferable that it is 130 or higher, further preferable that it is 140 or higher, and especially preferable that it is 150 or higher. From the viewpoint of coatability, it is preferable that the upper limit is 300 or lower, more preferable that it is 290 or lower, further preferable that it is 280 or lower, and especially preferable that it is 270 or lower.

[0119] The solubility parameter of solvent A1 is preferably 8.5 to 13.3 (cal / cm3) 0.5. The upper limit is preferably 12.5 (cal / cm3) 0.5 or less, more preferably 11.5 (cal / cm3) 0.5 or less, and further preferably 10.5 (cal / cm3) 0.5 or less. The lower limit is preferably 8.7 (cal / cm3) 0.5 or more, more preferably 8.9 (cal / cm3) 0.5 or more, and further preferably 9.1 (cal / cm3) 0.5 or more. As long as the solubility parameter of solvent A1 is within the above range, high affinity with specific particles such as silicon dioxide particles is obtained, and excellent coating properties are easily obtained. Furthermore, 1 (cal / cm3) 0.5 is equivalent to 2.0455 MPa 0.5. Also, the solubility parameter of the solvent is a value calculated using HSPiP.

[0120] Furthermore, in this specification, the solubility parameter of the solvent is the Hansen solubility parameter. Specifically, the value is calculated using the Hansen solubility parameter software "HSPiP 5.0.09".

[0121] Solvent A1 is preferably an aprotic solvent. By using an aprotic solvent as solvent A1, it is easier to form a film that can more effectively suppress the aggregation of specific particles such as silicon dioxide particles during film formation and further suppress the generation of uneven thickness or defects.

[0122] Solvent A1 is preferably an ether-based solvent or an ester-based solvent, with an ester-based solvent being more preferred. Furthermore, the ester-based solvent used as solvent A1 is preferably a compound that does not contain hydroxyl or terminal alkoxy groups. By using such a non-functional ester-based solvent, it is easier to form a film that further suppresses the generation of uneven thickness or defects.

[0123] Considering the need to obtain high affinity with specific particles such as silicon dioxide particles and to easily achieve excellent coating properties, solvent A1 is preferably selected from at least one of alkyl glycol diacetates and cyclic carbonates. Examples of alkyl glycol diacetates include propylene glycol diacetate, 1,4-butanediol diacetate, 1,3-butanediol diacetate, and 1,6-hexanediol diacetate. Examples of cyclic carbonates include propylene carbonate and ethylene carbonate.

[0124] Specific examples of solvent A1 include propylene carbonate (boiling point 240°C), ethylene carbonate (boiling point 260°C), propylene glycol diacetate (boiling point 190°C), dipropylene glycol methyl-n-propyl ether (boiling point 203°C), dipropylene glycol methyl ether acetate (boiling point 213°C), 1,4-butanediol diacetate (boiling point 232°C), 1,3-butanediol diacetate (boiling point 232°C), and 1,6-hexanediol diacetate (boiling point 260°C). Diethylene glycol monoethyl ether acetate (boiling point 217℃), diethylene glycol monobutyl ether acetate (boiling point 247℃), triacetin (boiling point 260℃), diallyl glycol monomethyl ether (boiling point 190℃), diethylene glycol monoethyl ether (boiling point 202℃), dipropylene glycol monopropyl ether (boiling point 212℃), dipropylene glycol monobutyl ether (boiling point 229℃), tripropylene glycol monomethyl ether (boiling point 242℃), tripropylene glycol monobutyl ether (boiling point 274℃), etc.

[0125] It is preferable that the solvent contained in the composition contains 3% by mass or more of the aforementioned solvent A1, more preferably 4% by mass or more, and even more preferably 5% by mass or more. It is preferable that the maximum content is 20% by mass or less, more preferably 15% by mass or less, and even more preferably 12% by mass or less. Solvent A1 may be only one type, or two or more types may be used together. When two or more types of solvent A1 are contained, it is preferable that the total content is within the above-mentioned range.

[0126] In addition to solvent A1 mentioned above, it is preferable that the composition also contains solvent A2 with a boiling point of 110°C or higher but not exceeding 190°C. Based on this, it is easy to form a film that moderately improves the dryness of the composition and further suppresses uneven thickness.

[0127] It is preferable that the boiling point of solvent A2 is 115°C or higher, more preferably 120°C or higher, and even more preferably 130°C or higher. Furthermore, it is preferable that the boiling point of solvent A2 is 170°C or lower, and even more preferably 150°C or lower. If the boiling point of solvent A2 is within the above range, the above-mentioned effects can be obtained more significantly.

[0128] Considering the reasons that the above-mentioned effects can be obtained more significantly, it is preferable that the molecular weight of solvent A2 is 100 or more, more preferably 130 or more, further preferably 140 or more, and especially preferably 150 or more. From the viewpoint of coatability, it is preferable that the upper limit is 300 or less, more preferably 290 or less, further preferably 280 or less, and especially preferably 270 or less.

[0129] The solubility parameter of solvent A2 is preferably 9.0 to 11.4 (cal / cm3) 0.5. The upper limit is preferably 11.0 (cal / cm3) 0.5 or less, more preferably 10.6 (cal / cm3) 0.5 or less, and further preferably 10.2 (cal / cm3) 0.5 or less. The lower limit is preferably 9.2 (cal / cm3) 0.5 or more, more preferably 9.4 (cal / cm3) 0.5 or more, and further preferably 9.6 (cal / cm3) 0.5 or more. As long as the solubility parameter of solvent A2 is within the above range, high affinity with specific particles such as silicon dioxide particles is obtained, and excellent coating properties are easily obtained. Furthermore, the absolute value of the difference between the solubility parameters of solvent A1 and solvent A2 is preferably 0.01 to 1.1 (cal / cm3) 0.5. The upper limit is 0.9 (cal / cm3) below 0.5, which is better; 0.7 (cal / cm3) below 0.5 is even better; and 0.5 (cal / cm3) below 0.5 is further better. The lower limit is 0.03 (cal / cm3) above 0.5, which is better; 0.05 (cal / cm3) above 0.5 is even better; and 0.08 (cal / cm3) above 0.5 is further better.

[0130] Solvent A2 is preferably selected from at least one of ether solvents and ester solvents, preferably including at least ester solvents, and even more preferably including both ether solvents and ester solvents. Specific examples of solvent A2 include cyclohexanol acetate (boiling point 173°C), dipropylene glycol dimethyl ether (boiling point 175°C), butyl acetate (boiling point 126°C), ethylene glycol monomethyl ether acetate (boiling point 145°C), propylene glycol monomethyl ether acetate (boiling point 146°C), 3-methoxybutyl acetate (boiling point 171°C), propylene glycol monomethyl ether (boiling point 120°C), 3-methoxybutanol (boiling point 161°C), propylene glycol monopropyl ether (boiling point 150°C), propylene glycol monobutyl ether (boiling point 170°C), and ethylene glycol monobutyl ether acetate (boiling point 188°C). Considering the high affinity with specific particles such as silicon dioxide particles and the ease of obtaining excellent coatability, it is preferable to contain at least propylene glycol monomethyl ether acetate.

[0131] When the solvent used in the composition contains solvent A2, it is preferable that the content of solvent A2 is 500 to 5000 parts by mass relative to 100 parts by mass of solvent A1. The upper limit is preferably 4500 parts by mass or less, more preferably 4000 parts by mass or less, and further preferably 3500 parts by mass or less. The lower limit is preferably 600 parts by mass or more, more preferably 700 parts by mass or more, and further preferably 750 parts by mass or more. Furthermore, it is preferable that the content of solvent A2 in the total solvent is 50% by mass or more, more preferably 60% by mass or more, and further preferably 70% by mass or more. The upper limit is preferably 95% by mass or less, more preferably 90% by mass or less, and further preferably 85% by mass or less. Solvent A2 may be only one type, or two or more types may be used together. When two or more types of solvent A2 are contained, it is preferable that the total content is within the above-mentioned range.

[0132] Furthermore, it is preferable that the solvents used in the composition contain a total of 62% by mass or more of solvent A1 and solvent A2, more preferably 72% by mass or more, and even more preferably 82% by mass or more. The upper limit can be set to 100% by mass, or 96% by mass or less, or 92% by mass or less.

[0133] It is preferable that the solvent used in the composition also contains water. According to this, high affinity with specific particles such as silicon dioxide particles is obtained, and excellent coatability is easily achieved. When the solvent used in the composition also contains water, the water content in the total solvent is preferably 0.1 to 5% by mass. The upper limit is preferably 4% by mass or less, more preferably 2.5% by mass or less, and further preferably 1.5% by mass or less. The lower limit is preferably 0.3% by mass or more, more preferably 0.5% by mass or more, and further preferably 0.7% by mass or more. If the water content is within the above range, the above-mentioned effects are more easily and significantly obtained.

[0134] The solvent used in the composition may also contain solvent A3, which has a boiling point exceeding 280°C. Based on this, it is easy to form a film that moderately improves the drying properties of the composition and further suppresses the generation of uneven thickness or defects. It is preferable that the upper limit of the boiling point of solvent A3 is 400°C or less, more preferably 380°C or less, and even more preferably 350°C or less. It is preferable that solvent A3 is selected from at least one of ether-based solvents and ester-based solvents. Specific examples of solvent A3 include polyethylene glycol monomethyl ether. When the solvent used in the composition also contains solvent A3, it is preferable that the content of solvent A3 in the total solvent volume is 0.5 to 15% by mass. It is preferable that the upper limit is 10% by mass or less, more preferably 8% by mass or less, and even more preferably 6% by mass or less. It is preferable that the lower limit is 1% by mass or more, more preferably 1.5% by mass or more, and even more preferably 2% by mass or more. Furthermore, it is preferable that the solvent used in the composition does not substantially contain solvent A3. Moreover, substantially not containing solvent A3 means that the content of solvent A3 in the total solvent is less than 0.1% by mass, less than 0.05% by mass is preferable, less than 0.01% by mass is even more preferable, and not containing it is even more preferable.

[0135] Regarding the solvent used in the composition, it is preferable that the content of compounds with a molecular weight (weight average molecular weight in the case of polymers) exceeding 300 is 10% by mass or less, more preferably 8% by mass or less, further preferably 5% by mass or less, even more preferably 3% by mass or less, and especially preferably 1% by mass or less. Based on this condition, it is easy to form a film that further suppresses the generation of uneven thickness or defects.

[0136] Regarding the solvent used in the composition, it is preferable that the content of the compound with a viscosity exceeding 10 mPa·s at 25°C is 10% by mass or less, more preferably 8% by mass or less, further preferably 5% by mass or less, even more preferably 3% by mass or less, and especially preferably 1% by mass or less. Based on this condition, it is easy to form a film that further suppresses the generation of uneven thickness or defects.

[0137] <<Silanol Compounds with a Molecular Weight of 1000 or Less>> The composition of the present invention can contain silanol compounds with a molecular weight of 1000 or less. Hereinafter, silanol compounds with a molecular weight of 1000 or less are also referred to as low molecular weight silanol compounds. Furthermore, low molecular weight silanol compounds are materials different from the particles having silanol groups described above.

[0138] It is preferable that the low molecular weight silanol compound is readily soluble in water. Furthermore, it is preferable that the low molecular weight silanol compound has a solubility of 5g or more in 100g of water at 25°C or 100g of propylene glycol monomethyl ether acetate at 25°C, and more preferably 10g or more.

[0139] It is preferred that the molecular weight of the low molecular weight silanol compound is below 950, even more preferred that it is below 900, and further preferred that it is below 800.

[0140] The silanol group value of the low molecular weight silanol compound is preferably 0.1 to 10 mmol / g. The upper limit of the silanol group value is preferably 7 mmol / g or less, and more preferably 5 mmol / g or less. The lower limit of the silanol group value is preferably 0.5 mmol / g or more, and more preferably 1 mmol / g or more. The silanol group value of the low molecular weight silanol compound is a numerical value representing the molar amount of silanol groups in 1g of the solid component of the low molecular weight silanol compound. The silanol group value of the low molecular weight silanol compound can be calculated by dividing the number of silanol groups contained in one molecule of the low molecular weight silanol compound by the molecular weight of the low molecular weight silanol compound.

[0141] Low-molecular-weight silanol compounds may also have functional groups such as carboxyl, amino, mercapto, (meth)acryl, isocyanate, and epoxy groups. By also having these functional groups, the crosslinking density of the membrane can be further increased. It is preferable that the above-mentioned functional groups are carboxyl, amino, (meth)acryl, or mercapto, with carboxyl or amino being more preferred.

[0142] As low molecular weight silanol compounds, examples include X-12-1135, KBP-90 (all manufactured by Shin-Etsu Chemical Co., Ltd.), KBP-64, X-12-1098, X-12-1135, X-12-1139, and X-12-1126 (all manufactured by Shin-Etsu Chemical Co., Ltd.).

[0143] The content of low molecular weight silanol compounds in the composition of the present invention is preferably 0.1 to 10% by mass. A lower limit of 0.2% by mass or more is preferred, and 0.5% by mass or more is even more preferred. An upper limit of 7.5% by mass or less is preferred, and 5% by mass or less is even more preferred. Furthermore, the content of low molecular weight silanol compounds in the total solids composition of the composition of the present invention is preferably 1 to 20% by mass. A lower limit of 3% by mass or more is preferred, and 5% by mass or more is even more preferred. An upper limit of 15% by mass or less is preferred, and 10% by mass or less is even more preferred. The composition of the present invention may contain only one type of low molecular weight silanol compound, or it may contain two or more types. When the composition of the present invention contains two or more types of low molecular weight silanol compounds, it is preferable that the total amount is within the above-mentioned range.

[0144] <<Surfactant>> The composition of the present invention can contain a surfactant. Various surfactants, such as fluorinated surfactants, nonionic surfactants, cationic surfactants, anionic surfactants, and polysiloxane surfactants, can be used as surfactants. Fluorinated surfactants or silicon surfactants are preferred, with silicon surfactants being more preferred. Furthermore, in this specification, a polysiloxane surfactant refers to a compound having repeating units comprising siloxane bonds on its main chain, and a compound containing both a hydrophobic portion and a hydrophilic portion within a single molecule.

[0145] Examples of fluorinated surfactants include those described in paragraphs 0060 to 0064 of Japanese Patent Application Publication No. 2014-041318 (corresponding to paragraphs 0060 to 0064 of International Publication No. 2014 / 017669), those described in paragraphs 0117 to 0132 of Japanese Patent Application Publication No. 2011-132503, and those described in Japanese Patent Application Publication No. 2020-008634, all of which are incorporated herein by reference. Commercially available examples of fluorinated surfactants include, for example, MEGAFACE. F-171, F-172, F-173, F-176, F-177, F-141, F-142, F-143, F-144, F-437, F-475, F-477, F-479, F-482, F-554, F-555-A, F-556, F-557, F-558, F-559, F-560, F-561, F-565, F-563, F-568, F-575, F-780, EXP, MFS-330, R-01, R-40, R-40-LM, R-41, R-41-LM, RS-43, R-43, TF-1956, RS-90, R-94, RS-72-K, DS-21 (the above are DIC) (manufactured by CORPORATION), FLUORAD FC430, FC431, FC171 (the above are manufactured by Sumitomo 3M Limited), SURFLON S-382, SC-101, SC-103, SC-104, SC-105, SC-1068, SC-381, SC-383, S-393, KH-40 (the above are manufactured by AGC INC.), PolyFox PF636, PF656, PF6320, PF6520, PF7002 (the above are manufactured by OMNOVA SOLUTIONS INC.), Futurgent 208G, 215M, 245F, 601AD, 601ADH2, 602A, 610FM, 710FL, 710FM, 710FS, FTX-218 (the above are manufactured by NEOS), etc.

[0146] Fluorinated surfactants can also better utilize acrylic compounds, which have a molecular structure containing functional groups with fluorine atoms, and when heated, the functional groups containing fluorine atoms are cleaved and the fluorine atoms volatilize. Examples of such fluorinated surfactants include the MEGAFACE DS series manufactured by DIC Corporation (Chemical Industry Daily (February 22, 2016), Nikkei Industrial News (February 23, 2016)), such as MEGAFACE DS-21.

[0147] Regarding fluorinated surfactants, polymers of vinyl ether compounds having fluorinated alkyl or fluorinated alkyl ether groups and hydrophilic vinyl ether compounds are preferred. Examples of such fluorinated surfactants include those described in Japanese Patent Application Publication No. 2016-216602, the contents of which are incorporated herein by reference.

[0148] Fluorinated surfactants can also be used with block polymers. Fluorinated surfactants can also preferably be used with fluorinated polymers comprising: repeating units derived from (meth)acrylate compounds having fluorine atoms; and repeating units derived from (meth)acrylate compounds having two or more (preferably five or more) alkoxy groups (preferably ethoxy or propyleneoxy groups). Furthermore, the fluorinated surfactants described in paragraphs 0016 to 0037 of Japanese Patent Application Publication No. 2010-032698, and the following compounds are also exemplified as fluorinated surfactants used in this invention. [Chemical Formula 3] The weight average molecular weight of the above compounds is preferably 3000 to 50000, for example, 14000. In the above compounds, the percentage of repeating units is expressed in moles.

[0149] Furthermore, fluorinated surfactants can also be used on fluoropolymers having groups containing ethylene-containing unsaturated bonds on their side chains. Specific examples include compounds described in paragraphs 0050-0090 and 0289-0295 of Japanese Patent Application Publication No. 2010-164965, and MEGAFACE RS-101, RS-102, RS-718K, and RS-72-K manufactured by DIC Corporation. Additionally, fluorinated surfactants can also use compounds described in paragraphs 0015-0158 of Japanese Patent Application Publication No. 2015-117327.

[0150] Furthermore, from an environmental control perspective, it is also preferable to use the surfactant described in International Publication No. 2020 / 084854 as a substitute for a perfluoroalkyl surfactant having 6 or more carbon atoms.

[0151] Furthermore, it is also preferable to use the fluorinated nitric acid chloride compound represented by formula (fi-1) as a surfactant. [Chemical Formula 4] In formula (fi-1), m represents 1 or 2, n represents an integer from 1 to 4, a represents 1 or 2, and Xa+ represents a metal ion with a valence of α, primary ammonium ion, secondary ammonium ion, tertiary ammonium ion, quaternary ammonium ion, or NH4+.

[0152] It is preferable that the polysiloxane surfactant is a compound that does not contain fluorine atoms. It is preferable that the polysiloxane surfactant is a modified polysiloxane compound. As a modified polysiloxane compound, compounds with an organic group introduced into the side chain and / or end of the polysiloxane are examples. As an organic group, groups containing functional groups selected from amino, epoxy, alicyclic epoxy, methanol, mercapto, carboxyl, fatty acid ester, and fatty acid amide groups, as well as groups containing polyether chains, are preferred.

[0153] Specific examples of polysiloxane surfactants include DC3PA, SH7PA, DC11PA, SH21PA, SH28PA, SH29PA, SH30PA, SH8400, SH 8400 FLUID, FZ-2122, 67 Additive, 74 Additive, M Additive, SF 8419 OIL (manufactured by Dow Toray Co., Ltd.), TSF-4440, TSF-4300, TSF-4445, TSF-4460, TSF-4452 (manufactured by Momentive Performance Materials Inc.), KP-341, KF-6000, KF-6001, KF-6002, KF-6003 (manufactured by Shin-Etsu Chemical). BYK-307, BYK-322, BYK-323, BYK-330, BYK-3760, BYK-UV3510 (all manufactured by BYK Chemie GmbH), etc.

[0154] Examples of nonionic surfactants include glycerol, trimethylolpropane, trimethylolethane, and their ethoxylated and propoxylated derivatives (e.g., glycerol propoxylated, glycerol ethoxylated, etc.), polyoxyethylene lauryl ether, polyoxyethylene stearyl ether, polyoxyethylene oil ether, polyoxyethylene octylphenyl ether, polyoxyethylene nonylphenyl ether, polyethylene glycol dilaurate, polyethylene glycol distearate, sorbitan fatty acid esters, Pluronic L10, L31, L61, L62, 10R5, 17R2, 25R2 (manufactured by BASF), Tetronic 304, 701, 704, 901, 904, 150R1 (manufactured by BASF), and Solsperse 20000 (Japan Lubrizol). (Manufactured by FUJIFILM Wako Pure Chemical Corporation), NCW-101, NCW-1001, NCW-1002 (manufactured by FUJIFILM Wako Pure Chemical Corporation), PIONIN D-6112, D-6112-W, D-6315 (manufactured by Takemoto Oil & Fat Co., Ltd.), OLFIN E1010, Surfynol 104, 400, 440 (manufactured by Nissin Chemical Co., Ltd.), etc.

[0155] The content of surfactant in the composition of the present invention is preferably 0.01 to 0.3% by mass. Considering the ease and effectiveness in suppressing the generation of wavy coating unevenness, a lower limit of 0.05% by mass or more is preferred, 0.1% by mass or more is more preferred, and 0.15% by mass or more is further preferred. An upper limit of 0.28% by mass or less is preferred, 0.25% by mass or less is more preferred, and 0.2% by mass or less is further preferred. Furthermore, the content of surfactant in the total solids component of the composition of the present invention is preferably 0.05 to 5.00% by mass. Considering the ease and effectiveness in suppressing the generation of wavy coating unevenness, a lower limit of 0.1% by mass or more is preferred, 0.5% by mass or more is more preferred, and 1.2% by mass or more is further preferred. An upper limit of 4% by mass or less is preferred, and 3% by mass or less is more preferred. The composition of the present invention may contain only one type of surfactant, or it may contain two or more types. When the composition of the present invention contains two or more surfactants, it is preferable that the total amount of these surfactants is within the above-mentioned range.

[0156] <<Dispersant>> The composition of the present invention can contain a dispersant. Examples of dispersants include polymeric dispersants (e.g., polyamide amines and their salts, polycarboxylic acids and their salts, high molecular weight unsaturated acid esters, modified polyurethanes, modified polyesters, modified poly(meth)acrylates, (meth)acrylate copolymers, naphthalenesulfonic acid formaldehyde condensates), polyoxyethylene alkyl phosphates, polyoxyethylene alkylamines, alkanolamines, etc. Based on their structure, polymeric dispersants can be further classified into linear polymers, terminal-modified polymers, grafted polymers, and block polymers. The polymeric dispersant adsorbs onto the surface of the particles and prevents re-aggregation. Therefore, preferred structures include terminal-modified polymers, grafted polymers, and block polymers having fixed sites on the particle surface. Commercially available dispersants can also be used. For example, the article described in paragraph 0050 of International Publication No. 2016 / 190374 is included in this specification.

[0157] The content of the dispersant relative to 100 parts by mass of a specific particle is preferably 1 to 100 parts by mass, more preferably 3 to 100 parts by mass, and further preferably 5 to 80 parts by mass. Furthermore, the content of the dispersant in the total solids content of the composition is preferably 1 to 30% by mass. The dispersant may be only one type, or it may contain two or more types. When two or more dispersants are contained, it is preferable that the total amount is within the above-mentioned range.

[0158] <<Free Radical Polymerizing Monomer>> The compositions of the present invention may contain free radical polymerizing monomers. As free radical polymerizing monomers, compounds having groups containing vinyl unsaturated bonds are preferred. Furthermore, free radical polymerizing monomers are preferably compounds that do not contain silanol groups.

[0159] A molecular weight of 100 to 3000 is preferred for the free radical polymerizable monomer. An upper limit of 2000 or less is more preferred, and 1500 or less is even more preferred. A lower limit of 150 or more is more preferred, and 250 or more is even more preferred.

[0160] Compounds with two or more vinyl unsaturated groups are preferred, and compounds with three or more vinyl unsaturated groups are even more preferred. The maximum number of vinyl unsaturated groups is preferably 15 or less, and even more preferably 6 or less. Examples of vinyl unsaturated groups include vinyl, styryl, (meth)allyl, and (meth)acrylyl, with (meth)acrylyl being preferred. Compounds with 3 to 15 functionalities of the free radical polymerizable monomer are preferred, and compounds with 3 to 6 functionalities of (meth)acrylyl are even more preferred. Specific examples of free radical polymerizable monomers include compounds described in paragraphs 0059 to 0079 of International Publication No. 2016 / 190374.

[0161] As a free radical polymerizable monomer, dinepentylenetetrol tri(meth)acrylate (commercially available, KAYARAD D-330; manufactured by Nippon Kayaku Co., Ltd.), dinepentylenetetrol tetra(meth)acrylate (commercially available, KAYARAD D-320; manufactured by Nippon Kayaku Co., Ltd.), dinepentylenetetrol penta(meth)acrylate (commercially available, KAYARAD D-310; manufactured by Nippon Kayaku Co., Ltd.), dinepentylenetetrol hexa(meth)acrylate (commercially available, KAYARAD DPHA; manufactured by Nippon Kayaku Co., Ltd., NK ESTER A-DPH-12E; Shin-Nakamura Chemical) (manufactured by Co., Ltd.), and compounds of the same type with (meth)acrylic acid groups linked via ethylene glycol and / or propylene glycol residues (e.g., SR454, SR499 commercially available from Sartomer Company, Inc.), diglyceride EO (ethylene oxide) modified (meth)acrylates (commercially available, M-460; manufactured by TOAGOSEI CO.,LTD.), neopentyl terephthalate tetraacrylate (manufactured by Shin-Nakamura Chemical Co., Ltd., NK ESTER A-TMMT), 1,6-hexanediol diacrylate (manufactured by Nippon Kayaku Co., Ltd., KAYARAD HDDA), RP-1040 (manufactured by Nippon Kayaku Co., Ltd.), ARONIX TO-2349 (manufactured by TOAGOSEI CO.,LTD.), NK OLIGO UA-7200 (manufactured by Shin-Nakamura Chemical Co., Ltd.), and compounds of the same type with (meth)acrylic acid groups linked via ethylene glycol and / or propylene glycol residues (e.g., SR454, SR499 commercially available from Sartomer Company, Inc.), diglyceride EO (ethylene oxide) modified (meth)acrylates (commercially available, M-460; manufactured by TOAGOSEI CO.,LTD.), neopentyl terephthalate tetraacrylate (manufactured by Shin-Nakamura Chemical Co., Ltd., NK ESTER A-TMMT), 1,6-hexanediol diacrylate (manufactured by Nippon Kayaku Co., Ltd., KAYARAD HDDA), RP-1040 (manufactured by Nippon Kayaku Co., Ltd.), ARONIX TO-2349 (manufactured by TOAGOSEI CO.,LTD.), NK OLI (manufactured by Co., Ltd.), 8UH-1006, 8UH-1012 (manufactured by TAISEI FINE CHEMICAL CO.,LTD.), LIGHT ACRYLATEPOB-A0 (manufactured by KYOEISHA CHEMICAL CO.,LTD.), etc.

[0162] Furthermore, as a free radical polymerizable monomer, trifunctional (meth)acrylate compounds such as trimethylolpropane tri(meth)acrylate, trimethylolpropane propylene oxide modified tri(meth)acrylate, trimethylolpropane ethylene oxide modified tri(meth)acrylate, isocyanuric acid ethylene oxide modified tri(meth)acrylate, and pentaerythritol tri(meth)acrylate can also be used. Commercially available trifunctional (meth)acrylate compounds include ARONIX M-309, M-310, M-321, M-350, M-360, M-313, M-315, M-306, M-305, M-303, M-452, M-450 (manufactured by TOAGOSEI CO.,LTD.), NK ESTER A9300, A-GLY-9E, A-GLY-20E, A-TMM-3, A-TMM-3L, A-TMM-3LM-N, A-TMPT, TMPT (manufactured by Shin-Nakamura Chemical Co.,Ltd.), KAYARAD GPO-303, TMPTA, THE-330, TPA-330, PET-30 (manufactured by Nippon Kayaku Co.,Ltd.), etc.

[0163] Free radical polymerizable monomers can also be compounds containing acid groups. Examples of acid groups include carboxyl, sulfonic acid, and phosphate groups, with carboxyl being preferred. Commercially available free radical polymerizable monomers containing acid groups include ARONIX M-510, M-520, and ARONIX TO-2349 (manufactured by TOAGOSEI CO.,LTD.). The preferred acid value for free radical polymerizable compounds containing acid groups is 0.1 to 40 mg KOH / g, with 5 to 30 mg KOH / g being more preferred. If the acid value of the free radical polymerizable monomer is 0.1 mg KOH / g or higher, it has good solubility in the developer; if it is 40 mg KOH / g or lower, it is advantageous in manufacturing or processing.

[0164] Free radical polymerizable monomers can also be compounds having a caprolactone structure. Examples of free radical polymerizable compounds having a caprolactone structure are sold by Nippon Kayaku Co., Ltd. as the KAYARAD DPCA series, such as DPCA-20, DPCA-30, DPCA-60, and DPCA-120.

[0165] Free radical polymerizable monomers may also be free radical polymerizable monomers having alkoxy groups. Free radical polymerizable monomers having alkoxy groups are preferably free radical polymerizable monomers having ethyleneoxy and / or propyleneoxy groups, more preferably free radical polymerizable monomers having ethyleneoxy groups, and 3- to 6-functional (meth)acrylate compounds having 4 to 20 ethyleneoxy groups are even more preferred. Commercially available examples of free radical polymerizable monomers having alkoxy groups include, for example, SR-494, a tetrafunctional (meth)acrylate with 4 ethoxy groups manufactured by Sartomer Company, Inc., and KAYARAD TPA-330, a trifunctional (meth)acrylate with 3 isobutoxy groups manufactured by Nippon Kayaku Co., Ltd.

[0166] Free radical polymerizable monomers can also be free radical polymerizable monomers with a fusiform skeleton. Commercially available free radical polymerizable monomers with a fusiform skeleton include OGSOL EA-0200 and EA-0300 (manufactured by Osaka Gas Chemicals Co., Ltd., (meth)acrylate monomers with a fusiform skeleton), etc.

[0167] It is preferable to use compounds that do not substantially contain environmentally regulated substances such as toluene as monomers for free radical polymerization. Examples of such commercially available compounds include KAYARAD DPHA LT and KAYARAD DPEA-12 LT (manufactured by Nippon Kayaku Co., Ltd.).

[0168] When the composition of the present invention contains a free radical polymerizable monomer, it is preferable that the content of the free radical polymerizable monomer in the composition is 0.1% by mass or more, more preferably 0.2% by mass or more, and further preferably 0.5% by mass or more. As an upper limit, it is preferable that 10% by mass or less, more preferably 5% by mass or less, and more preferably 3% by mass or less. Furthermore, it is preferable that the content of the free radical polymerizable monomer in the total solid content of the composition is 1% by mass or more, more preferably 2% by mass or more, and further preferably 5% by mass or more. As an upper limit, it is preferable that 30% by mass or less, more preferably 25% by mass or less, and more preferably 20% by mass or less. The composition of the present invention may contain only one type of free radical polymerizable monomer, or it may contain two or more types. When it contains two or more types of free radical polymerizable monomers, it is preferable that the total amount is within the above-mentioned range. Furthermore, it is also preferable that the composition of the present invention does not substantially contain any free radical polymerizable monomers. When the composition of the present invention substantially does not contain free radical polymerizable monomers, it is easy to form a film with a lower refractive index. Furthermore, it is easy to form a film with low haze. Moreover, "the composition of the present invention substantially does not contain free radical polymerizable monomers" means that the content of free radical polymerizable monomers in the total solid content of the composition of the present invention is preferably 0.05% by mass or less, preferably 0.01% by mass or less, and even more preferably, it contains no free radical polymerizable monomers.

[0169] <<Photoradical polymerization initiator>> The composition of the present invention may contain a photoradical polymerization initiator. When the composition of the present invention contains a free radical polymerizable monomer and a photoradical polymerization initiator, the composition of the present invention can be preferably used as a composition for patterning by photolithography.

[0170] As photoradical polymerization initiators, examples include halogenated hydrocarbon derivatives (e.g., compounds with a trihalomethane skeleton, compounds with a diazole skeleton, etc.), acetyphosphine compounds, hexaaryl biimidazole compounds, oxime compounds, organic peroxides, sulfur compounds, ketone compounds, aromatic onium salts, α-hydroxy ketone compounds, α-amino ketone compounds, etc. From the perspective of exposure sensitivity, photoradical polymerization initiators are preferably trihalomethyl triazine compounds, benzyl dimethyl ketal compounds, α-hydroxy ketone compounds, α-amino ketone compounds, acetophosphine compounds, phosphine oxide compounds, metallocene compounds, oxime compounds, hexaaryl diimidazole compounds, onium compounds, benzothiazole compounds, benzophenone compounds, acetophenone compounds, cyclopentadiene-benzene-iron complexes, halomethyl diazole compounds, and 3-aryl substituted coumarin compounds. Compounds selected from oxime compounds, α-hydroxy ketone compounds, α-amino ketone compounds, and acetophosphine compounds are even more preferred, with oxime compounds being the most preferred. Furthermore, examples of photoradical polymerization initiators include compounds described in paragraphs 0065 to 0111 of Japanese Patent Application Publication No. 2014-130173, compounds described in Japanese Patent No. 6301489, peroxide-based photoradical polymerization initiators described in MATERIAL STAGE 37-60p, vol.19, No.3, 2019, photoradical polymerization initiators described in International Publication No. 2018 / 221177, photoradical polymerization initiators described in International Publication No. 2018 / 110179, photoradical polymerization initiators described in Japanese Patent Application Publication No. 2019-043864, and photoradical polymerization initiators described in Japanese Patent Application Publication No. 2019-044030. The peroxide-based initiators described in Japanese Patent Application Publication No. 2019-167313, the aminoacetophenone-based initiators containing acezolidinyl groups described in Japanese Patent Application Publication No. 2020-055992, the oxime-based photoradical polymerization initiators described in Japanese Patent Application Publication No. 2013-190459, the polymers described in Japanese Patent Application Publication No. 2020-172619, and the compounds represented by Formula 1 described in International Publication No. 2020 / 152120 are all included in this specification.

[0171] Specific examples of hexaaryl diimidazole compounds include 2,2',4-tris(2-chlorophenyl)-5-(3,4-dimethoxyphenyl)-4,5-diphenyl-1,1'-diimidazole, etc.

[0172] Examples of commercially available α-hydroxy ketone compounds include Omnirad 184, Omnirad 1173, Omnirad 2959, Omnirad 127 (all manufactured by IGM Resins BV), Irgacure 184, Irgacure 1173, Irgacure 2959, and Irgacure 127 (all manufactured by BASF). Examples of commercially available α-amino ketone compounds include Omnirad 907, Omnirad 369, Omnirad 369E, Omnirad 379EG (all manufactured by IGM Resins BV), Irgacure 907, Irgacure 369, Irgacure 369E, and Irgacure 379EG (all manufactured by BASF). Commercially available acetylsphine compounds include Omnirad 819, Omnirad TPO (both manufactured by IGM Resins BV), Irgacure 819, and Irgacure TPO (both manufactured by BASF).

[0173] Examples of oxime compounds include those described in Japanese Patent Application Publication No. 2001-233842, Japanese Patent Application Publication No. 2000-080068, Japanese Patent Application Publication No. 2006-342166, JCS Perkin II (1979, pp. 1653-1660), JCS Perkin II (1979, pp. 156-162), and the Journal of Photopolymer Science and... Compounds described in Technology (1995, pp. 202-232), compounds described in Japanese Patent Application Publication No. 2000-066385, compounds described in Japanese Patent Application Publication No. 2004-534797, compounds described in Japanese Patent Application Publication No. 2006-342166, compounds described in Japanese Patent Application Publication No. 2017-019766, compounds described in Japanese Patent Application Publication No. 6065596, compounds described in International Publication No. 2015 / 152153, compounds described in International Publication No. 2017 / 051680, compounds described in Japanese Patent Application Publication No. 2017-198865, compounds described in paragraphs 0025 to 0038 of International Publication No. 2017 / 164127, compounds described in International Publication No. 2013 / 167515, etc. Specific examples of oxime compounds include 3-benzoxyloxyiminobutane-2-one, 3-acetoxyiminobutane-2-one, 3-propoxyiminobutane-2-one, 2-acetoxyiminopentane-3-one, 2-acetoxyimino-1-phenylpropane-1-one, 2-benzoxyloxyimino-1-phenylpropane-1-one, 3-(4-toluenesulfonoxy)iminobutane-2-one, 2-ethoxycarbonyloxyimino-1-phenylpropane-1-one, and 1-[4-(phenylthio)phenyl]-3-cyclohexyl-propane-1,2-dione-2-(O-acetylgoxime), etc. Commercially available products include Irgacure OXE01, Irgacure OXE02, Irgacure OXE03, and Irgacure OXE04 (all manufactured by BASF), TR-PBG-304, TR-PBG-327 (manufactured by TRONLY), and ADEKA OPTOMER N-1919 (manufactured by ADEKA Corporation, as described in Japanese Patent Application Publication No. 2012-014052, a photopolymerization initiator 2). Furthermore, as oxime compounds, compounds that are colorless or highly transparent and resistant to discoloration are preferred.Commercially available products include ADEKA ARKLS NCI-730, NCI-831, and NCI-930 (all manufactured by ADEKA CORPORATION).

[0174] Oxime compounds having a cyclohexane ring can also be used as photoradical polymerization initiators. Specific examples of oxime compounds having a cyclohexane ring include the compound described in Japanese Patent Application Publication No. 2014-137466, the compound described in Japanese Patent No. 6636081, and the compound described in Korean Patent Publication No. 10-2016-0109444.

[0175] As a photoradical polymerization initiator, an oxime compound having at least one benzene ring in the carbazole ring as the backbone of the naphthalene ring can also be used. As a specific example of such an oxime compound, the compound described in International Publication No. 2013 / 083505 can be cited.

[0176] Oxime compounds having fluorine atoms can also be used as photoradical polymerization initiators. Specific examples of oxime compounds having fluorine atoms include compounds described in Japanese Patent Application Publication No. 2010-262028, compounds 24, 36-40 described in Japanese Patent Application Publication No. 2014-500852, and compound (C-3) described in Japanese Patent Application Publication No. 2013-164471.

[0177] As a photoradical polymerization initiator, a nitro oxime compound can be used. It is also preferable to use a nitro oxime compound as a dimer. Specific examples of nitro oxime compounds include the compounds described in paragraphs 0031 to 0047 of Japanese Patent Application Publication No. 2013-114249, paragraphs 0008 to 0012 and 0070 to 0079 of Japanese Patent Application Publication No. 2014-137466, the compounds described in paragraphs 0007 to 0025 of Japanese Patent Application No. 4223071, and ADEKA ARKLS NCI-831 (manufactured by ADEKA CORPORATION).

[0178] Oxime compounds having a benzofuran skeleton can also be used as photoradical polymerization initiators. Specific examples include OE-01 to OE-75 as described in International Publication No. 2015 / 036910.

[0179] As a photoradical polymerization initiator, oxime compounds with hydroxyl substituents bonded to the carbazole skeleton can also be used. Examples of such photoradical polymerization initiators include compounds described in International Publication No. 2019 / 088055.

[0180] The oxime compound is preferably a compound with a maximum absorption wavelength in the range of 350–500 nm, and even more preferably a compound with a maximum absorption wavelength in the range of 360–480 nm. Furthermore, from the viewpoint of sensitivity, a high molar absorptivity at wavelengths of 365 nm or 405 nm is preferred, 1000–300000 is more preferred, 2000–300000 is further preferred, and 5000–200000 is particularly preferred. The molar absorptivity of the compound can be measured using known methods. For example, it is preferable to measure it using ethyl acetate solvent at a concentration of 0.01 g / L using a spectrophotometer (a Cary-5 spectrophotometer manufactured by Varian).

[0181] As a photoradical polymerization initiator, a photoradical polymerization initiator with two or more functionalities can also be used. By using such a photoradical polymerization initiator, two or more free radicals are generated from one molecule of the photoradical polymerization initiator, thus obtaining good sensitivity. Furthermore, in the case of using compounds with asymmetric structures, crystallinity decreases while solubility in solvents and the like increases, making it difficult to precipitate over time, thereby improving the long-term stability of the composition. Specific examples of photoradical polymerization initiators with two or more functionalities include dimers of oxime compounds described in Japanese Patent Application Publication No. 2010-527339, Japanese Patent Application Publication No. 2011-524436, International Publication No. 2015 / 004565, Japanese Patent Application Publication No. 2016-532675 (paragraphs 0407-0412), and International Publication No. 2017 / 033680 (paragraphs 0039-0055), as well as compound (E) described in Japanese Patent Application Publication No. 2013-522445. And compounds (G), Cmpd1 to 7 as described in International Publication No. 2016 / 034963, oxime ester photoinitiators as described in paragraph 0007 of Japanese Patent Publication No. 2017-523465, photoinitiators as described in paragraphs 0020 to 0033 of Japanese Patent Application Publication No. 2017-167399, photopolymerization initiators (A) as described in paragraphs 0017 to 0026 of Japanese Patent Application Publication No. 2017-151342, and oxime ester photoinitiators as described in Japanese Patent Publication No. 6469669, etc.

[0182] When the composition of the present invention contains a photoradical polymerization initiator, it is preferable that the content of the photoradical polymerization initiator in the composition is 0.1% by mass or more, more preferably 0.2% by mass or more, and even more preferably 0.5% by mass or more. As an upper limit, it is preferable that 10% by mass or less, more preferably 5% by mass or less, and even more preferably 3% by mass or less. Furthermore, it is preferable that the content of the photoradical polymerization initiator in the total solid content of the composition is 1% by mass or more, more preferably 2% by mass or more, and even more preferably 5% by mass or more. As an upper limit, it is preferable that 30% by mass or less, more preferably 25% by mass or less, and even more preferably 20% by mass or less. Furthermore, it is preferable that the composition contains 10 to 1000 parts by mass of photoradical polymerization initiator relative to 100 parts by mass of the free radical polymerizable monomer. It is preferable that 500 parts by mass or less, more preferably 300 parts by mass or less, and even more preferably 100 parts by mass or less. The lower limit is preferably 20 parts by mass or more, more preferably 40 parts by mass or more, and even more preferably 60 parts by mass or more. The composition of the present invention may contain only one type of photoradical polymerization initiator, or it may contain two or more types. When containing two or more photoradical polymerization initiators, it is preferable that the total amount is within the above-mentioned range. Furthermore, it is also preferable that the composition of the present invention substantially does not contain a photoradical polymerization initiator. Moreover, the case where the composition of the present invention substantially does not contain a photoradical polymerization initiator means that the content of the photoradical polymerization initiator in the total solid content of the composition is preferably 0.005% by mass or less, preferably 0.001% by mass or less, and even more preferably, it does not contain a photoradical polymerization initiator at all.

[0183] <<Resin>> The composition of the present invention may contain a resin. The weight-average molecular weight (Mw) of the resin is preferably 3,000 to 2,000,000. The upper limit is preferably 1,000,000 or less, and more preferably 500,000 or less. The lower limit is preferably 4,000 or more. Furthermore, the number-average molecular weight (Mn) of the resin is preferably 3,000 to 2,000,000. The upper limit is preferably 1,000,000 or less, and more preferably 500,000 or less. The lower limit is preferably 4,000 or more.

[0184] Examples of resins include (meth)acrylic resins, epoxy resins, olefin-thiol resins, polycarbonate resins, polyether resins, polyaryl ester resins, polyurethane resins, polyether-urethane resins, polystyrene resins, polyaryl ether phosphine oxide resins, polyimide resins, polyamide resins, polyamide-amide resins, polyolefin resins, cyclic olefin resins, polyester resins, styrene resins, vinyl acetate resins, polyvinyl alcohol resins, polyvinyl acetal resins, polyurethane resins, polyurea resins, and silicone resins. One of these resins can be used alone, or two or more can be mixed. From the viewpoint of improving heat resistance, nobornene resins are preferred as cyclic olefin resins. Commercially available nobornene resins include, for example, the ARTON series manufactured by JSR CORPORATION (e.g., ARTON F4520). Examples of silicone resins include the SILAPLANE series manufactured by JNC CORPORATION (e.g., FM-DA21, FM-3321, etc.).

[0185] As the resin, the resin described in the examples of International Publication No. 2016 / 088645, the resin described in Japanese Patent Application Publication No. 2017-057265, the resin described in Japanese Patent Application Publication No. 2017-032685, the resin described in Japanese Patent Application Publication No. 2017-075248, the resin described in Japanese Patent Application Publication No. 2017-066240, and the resin described in Japanese Patent Application Publication No. 2017- The resins described in Japanese Patent Application Publication No. 167513, Japanese Patent Application Publication No. 2017-173787, Japanese Patent Application Publication No. 2017-206689 (paragraphs 0041-0060), Japanese Patent Application Publication No. 2018-010856 (paragraphs 0022-0071), Japanese Patent Application Publication No. 2016-222891 (block polyisocyanate resin), Japanese Patent Application Publication No. 2020-122052, Japanese Patent Application Publication No. 2020-111656, Japanese Patent Application Publication No. 2020-139021, and Japanese Patent Application Publication No. 2017-138503 (resins comprising a ring structure on the main chain and a biphenyl structure on the side chain). Furthermore, resins with a stroma skeleton can be used more preferably as resins. For information on resins with a stroma skeleton, please refer to the description in U.S. Patent Application Publication No. 2017 / 0102610, which is incorporated herein by reference. Also, as resins, the resins described in paragraphs 0199 to 0233 of Japanese Patent Application Publication No. 2020-186373, the alkali-soluble resins described in Japanese Patent Application Publication No. 2020-186325, and the resin represented by Formula 1 described in Korean Patent Publication No. 10-2020-0078339 can also be used.

[0186] As a resin, it is preferable to use a resin with acid groups. According to this, when forming a pattern by photolithography, the developability can be further improved. Examples of acid groups include carboxyl groups, phosphate groups, sulfonic acid groups, and phenolic hydroxyl groups, with carboxyl groups being preferred. Resins with acid groups can be used, for example, as alkali-soluble resins.

[0187] It is preferable that the resin containing acid groups contains repeating units with acid groups on the side chain, and it is even more preferable that the resin contains 5 to 70 mol% of repeating units with acid groups on the side chain among all repeating units. The upper limit of the content of repeating units with acid groups on the side chain is preferably 50 mol% or less, and more preferably 30 mol% or less. The lower limit of the content of repeating units with acid groups on the side chain is preferably 10 mol% or more, and more preferably 20 mol% or more.

[0188] The acid value of the resin containing acid groups is preferably 30 to 500 mg KOH / g. The lower limit is preferably 50 mg KOH / g or higher, and more preferably 70 mg KOH / g or higher. The upper limit is preferably 400 mg KOH / g or lower, more preferably 300 mg KOH / g or lower, and even more preferably 200 mg KOH / g or lower. The weight average molecular weight (Mw) of the resin containing acid groups is preferably 5000 to 100000. Furthermore, the number average molecular weight (Mn) of the resin containing acid groups is preferably 1000 to 20000.

[0189] It is preferable that the resin content in the total solids component of the composition is 30% by mass or less. From the perspective of obtaining the effects of the present invention more significantly, 20% by mass or less is more preferable, 10% by mass or less is further preferable, 5% by mass or less is even more preferable, and 3% by mass or less is particularly preferable. The composition of the present invention may contain only one type of resin, or it may contain two or more types. When containing two or more types of resin, it is preferable that the total amount is within the above-mentioned range. It is also preferable that the composition of the present invention substantially does not contain resin. Furthermore, in this specification, "substantially does not contain resin" means that the resin content in the total solids component of the composition is 0.1% by mass or less, preferably 0.05% by mass or less, and preferably does not contain resin at all.

[0190] <<Fitness Improver>> The composition of the present invention may contain a fitness improver. By containing a fitness improver, a hardened film with excellent adhesion to the support can be formed. As a fitness improver, examples preferably include those described in Japanese Patent Application Publication No. 05-011439, Japanese Patent Application Publication No. 05-341532, and Japanese Patent Application Publication No. 06-043638. Specifically, examples include benzimidazole, benzo[a]azole, benzo[thiazol]azole, 2-mercaptobenzimidazole, 2-mercaptobenzo[a]azole, 2-mercaptobenzo[thiazol]azole, 3-α-linylmethyl-1-phenyl-triazol-2-thione, 3-α-linylmethyl-5-phenyl-diazol-2-thione, 5-amino-3-α-linylmethyl-thiadiazol-2-thione, 2-mercapto-5-methylthio-thiadiazole, triazole, tetraazole, benzo[a]triazole, carboxybenzo[a]triazole, benzo[a]triazole containing an amino group, and silane coupling agents. As a adhesion modifier, silane coupling agents are preferred. Furthermore, in this specification, the silane coupling agent is a compound having a hydrolyzable group. It is preferred that the silane coupling agent be a silane compound having a hydrolyzable group and other functional groups. Furthermore, hydrolyzable groups refer to substituents that are directly bonded to silicon atoms and can form siloxane bonds through at least one of hydrolysis and condensation reactions. Examples of hydrolyzable groups include halogen atoms, alkoxy groups, and aceoxy groups, with alkoxy groups being preferred.

[0191] Regarding silane coupling agents, compounds having an alkoxysilyl group are preferred. Examples of alkoxysilyl groups include monoalkoxysilyl, dialkoxysilyl, and trimekoxysilyl, with trimekoxysilyl being preferred. Furthermore, the number of carbon atoms in the alkyl group of the alkoxysilyl group is preferably 1 to 10, more preferably 1 to 5, further preferably 1 to 3, even more preferably 1 or 2, and 1 is preferred. Also, examples of functional groups other than hydrolyzable groups include vinyl, (meth)allyl, (meth)acrylyl, mercapto, epoxy, oxetyl, amino, urea, thioether, isocyanate, and phenyl, with amino, (meth)acrylyl, and epoxy being preferred. The composition of the present invention, by containing a compound having an alkoxysilyl group, can further improve curability. The reason for this effect can be presumed to be that compounds with alkoxysilyl groups undergo hydrolytic condensation by a base or acid generated from the generating agent. In particular, when a photoacid generating agent or a photobase generating agent is used as the generating agent, a composition with excellent photocurability can be produced. Such a composition can be better used as a composition for pattern formation by photolithography.

[0192] Specific examples of silane coupling agents include N-β-aminoethyl-γ-aminopropylmethyldimethoxysilane (manufactured by Shin-Etsu Chemical Co., Ltd., product name KBM-602), N-β-aminoethyl-γ-aminopropyltrimethoxysilane (manufactured by Shin-Etsu Chemical Co., Ltd., product name KBM-603), N-β-aminoethyl-γ-aminopropyltriethoxysilane (manufactured by Shin-Etsu Chemical Co., Ltd., product name KBE-602), γ-aminopropyltrimethoxysilane (manufactured by Shin-Etsu Chemical Co., Ltd., product name KBM-903), and γ-aminopropyltriethoxysilane (manufactured by Shin-Etsu Chemical Co., Ltd., product name KBM-903). (Manufactured by Shin-Etsu Chemical Co., Ltd., product name KBE-903), 3-methylpropoxypropylmethyldimethoxysilane (manufactured by Shin-Etsu Chemical Co., Ltd., product name KBM-502), 3-methylpropoxypropyltrimethoxysilane (manufactured by Shin-Etsu Chemical Co., Ltd., product name KBM-503), 8-epoxypropoxyoctyltrimethoxysilane (manufactured by Shin-Etsu Chemical Co., Ltd., product name KBM-4803), 1,8-bis(trimethoxysilyl)octane (manufactured by Shin-Etsu Chemical Co., Ltd., product name KBM-3086), tris(trimethoxysilylpropyl)isocyanurate (manufactured by Shin-Etsu Chemical Co., Ltd., product name KBM-3086), tris(trimethoxysilylpropyl)isocyanurate (manufactured by Shin-Etsu Chemical Co., Ltd., product name KBE-903), 3-methylpropoxypropylmethyldimethoxysilane (manufactured by Shin-Etsu Chemical Co., Ltd., product name KBM-503), 8-epoxypropoxyoctyltrimethoxysilane (manufactured by Shin-Etsu Chemical Co., Ltd., product name KBM-4803), 1,8-bis(trimethoxysilyl)octane (manufactured by Shin-Etsu Chemical Co., Ltd., product name KBM-3086), tris(trimethoxysilylpropyl)isocyanurate ...). Products manufactured by Shin-Etsu Chemical Co., Ltd. (product name KBM-9659) and X-12-5263HP (manufactured by Shin-Etsu Chemical Co., Ltd.) are also mentioned. Furthermore, specific examples of silane coupling agents include the compounds described in paragraphs 0018 to 0036 of Japanese Patent Application Publication No. 2009-288703 and the compounds described in paragraphs 0056 to 0066 of Japanese Patent Application Publication No. 2009-242604, the contents of which are incorporated in this specification.

[0193] When the composition of the present invention contains a bonding modifier, it is preferable that the content of the bonding modifier in the total solids of the composition is 0.001% by mass or more, more preferably 0.01% by mass or more, and particularly preferably 0.1% by mass or more. As an upper limit, it is preferable that it is 20% by mass or less, more preferably 10% by mass or less, and particularly preferably 5% by mass or less. The composition of the present invention may contain only one bonding modifier, or it may contain two or more. When it contains two or more bonding modifiers, it is preferable that the total amount is within the above-mentioned range.

[0194] <<Other Ingredients>> The composition of the present invention may contain sensitizers, fillers, thermosetting accelerators, plasticizers, and other additives (e.g., conductive particles, defoamers, flame retardants, leveling agents, peeling accelerators, fragrances, surface tension modifiers, chain transfer agents, etc.) as needed. The physical properties of the membrane can be adjusted by appropriately containing these ingredients. For details regarding these ingredients, please refer to paragraph 0183 onwards in Japanese Patent Application Publication No. 2012-003225 (corresponding to paragraph 0237 of U.S. Patent Application Publication No. 2013 / 0034812), and paragraphs 0101-0104, 0107-0109 of Japanese Patent Application Publication No. 2008-250074, the contents of which are incorporated herein by reference. Furthermore, the composition may contain potential antioxidants as needed. As potential antioxidants, examples include compounds in which the site where the antioxidant functions is protected by a protecting group, and which function as antioxidants by removing the protecting group through heating at 100–250°C or heating at 80–200°C in the presence of an acid / base catalyst. Examples of potential antioxidants include compounds described in International Publication No. 2014 / 021023, International Publication No. 2017 / 030005, and Japanese Patent Application Publication No. 2017-008219. Commercially available examples of potential antioxidants include ADEKA ARKLS GPA-5001 (manufactured by ADEKA CORPORATION).

[0195] The composition of the present invention may contain a colorant. Examples of colorants include green colorants, red colorants, yellow colorants, purple colorants, blue colorants, orange colorants, and black colorants.

[0196] The colorant can be a pigment or a dye. It is preferable that the average primary particle size of the pigment is 1–200 nm. A lower limit of 5 nm or more is preferable, and 10 nm or more is even more preferable. An upper limit of 180 nm or less is preferable, 150 nm or less is even more preferable, and 100 nm or less is even more preferable.

[0197] It is preferable that the content of colorant in the total solids component of the composition is 10% by mass or less, more preferably 5% by mass or less, and especially preferably 1% by mass or less. The composition of the present invention may contain only one type of colorant, or it may contain two or more types. When two or more colorants are contained, it is preferable that the total amount is within the above-mentioned range. Furthermore, it is also preferable that the composition of the present invention substantially does not contain colorants. Moreover, the case where the composition of the present invention substantially does not contain colorants means that the content of colorant in the total solids component of the composition is preferably 0.1% by mass or less, more preferably 0.05% by mass or less, and even more preferably does not contain colorants.

[0198] From an environmental control perspective, the use of perfluoroalkyl sulfonic acids and their salts, as well as perfluoroalkyl carboxylic acids and their salts, is sometimes regulated. In the composition, when reducing the content of the aforementioned compounds, it is preferable that the content of perfluoroalkyl sulfonic acids (especially perfluoroalkyl sulfonic acids with 6 to 8 carbon atoms) and their salts, and perfluoroalkyl carboxylic acids (especially perfluoroalkyl carboxylic acids with 6 to 8 carbon atoms) and their salts relative to the total solids content of the composition is in the range of 0.01 ppb to 1,000 ppb, more preferably in the range of 0.05 ppb to 500 ppb, and further preferably in the range of 0.1 ppb to 300 ppb. The composition may also substantially not contain perfluoroalkyl sulfonic acids and their salts, and perfluoroalkyl carboxylic acids and their salts. For example, by using compounds that can replace perfluoroalkyl sulfonic acids and their salts, and compounds that can replace perfluoroalkyl carboxylic acids and their salts, a composition that substantially does not contain perfluoroalkyl sulfonic acids and their salts, and perfluoroalkyl carboxylic acids and their salts, can be selected. As alternatives to regulated compounds, examples include compounds removed from the regulated list by means of differences in the number of carbon atoms in the perfluoroalkyl group. However, the foregoing does not preclude the use of perfluoroalkyl sulfonic acids and their salts, as well as perfluoroalkyl carboxylic acids and their salts. The composition may also contain perfluoroalkyl sulfonic acids and their salts, as well as perfluoroalkyl carboxylic acids and their salts, to the maximum permissible extent.

[0199] <Containing Container> There are no particular limitations on the containing container used as a component of the present invention, and known containing containers can be used. Furthermore, as a containing container, for the purpose of suppressing the mixing of impurities into the raw materials or components, it is preferable to use a multi-layer bottle with a container inner wall composed of six types of six-layer resins or a bottle with a seven-layer structure of the six types of resins. For example, the container described in Japanese Patent Application Publication No. 2015-123351 can be cited as such a container. Furthermore, for the purposes of preventing metal from leaching from the inner wall of the container, improving the storage stability of the components, or suppressing component deterioration, it is preferable to make the inner wall of the container out of glass or stainless steel.

[0200] <Method for Manufacturing the Composition> The composition of the present invention can be manufactured by mixing the aforementioned components. When manufacturing the composition, all components can be dissolved and / or dispersed in a solvent simultaneously to manufacture the composition, or the components can be appropriately prepared as two or more solutions or dispersions and mixed during use (coating) to manufacture the composition.

[0201] When manufacturing the composition, it is preferable to filter the composition using a filter in order to remove impurities or reduce defects. As long as the filter is one that has been used for filtration purposes, it can be used without particular limitation. Examples of filters made of materials such as polytetrafluoroethylene (PTFE), polyvinylidene fluoride (PVDF), polyamide resins such as nylon (e.g., nylon-6, nylon-6,6), polyolefin resins such as polyethylene and polypropylene (PP) (including high-density and ultra-high molecular weight polyolefin resins) are also acceptable. Among these materials, polypropylene (including high-density polypropylene) and nylon are preferred.

[0202] A filter pore size of 0.01–7.0 μm is preferred, 0.01–3.0 μm is more preferred, and 0.05–0.5 μm is even more preferred. As long as the filter pore size is within the above range, fine impurities can be removed more reliably. For filter pore size values, please refer to the filter manufacturer's specifications. Various filters supplied by NIHON PALL Corporation (DFA4201NXEY, DFA4201NAEY, DFA4201J006P, etc.), Advantec Toyo Kaisha, Ltd., Nihon Entegris KK (Formerly Nippon Mykrolis Corporation), and KITZ MICROFILTER Corporation can be used.

[0203] Furthermore, fibrous filter materials are preferable as filters. Examples of fibrous filter materials include polypropylene fiber, nylon fiber, and glass fiber. Commercially available products include the SBP series (SBP008, etc.), TPR series (TPR002, TPR005, etc.), and SHPX series (SHPX003, etc.) manufactured by ROKI TECHNO CO.,LTD.

[0204] When using filters, different filters can be combined (e.g., a first filter and a second filter, etc.). In this case, filtration using each filter can be performed only once, or more than twice. Furthermore, filters with different pore sizes can be combined within the aforementioned range. Also, filtration can be performed using the first filter only on the dispersion, and then the second filter can be used to filter after mixing other components. Furthermore, filters can be appropriately selected based on the hydrophilicity / hydrophobicity of the components.

[0205] <Curing film> The curing film of the present invention is a curing film obtained from the above-described composition of the present invention.

[0206] It is preferable that the refractive index of the hardened film of the present invention is 1.45 or less for light with a wavelength of 633 nm, more preferably 1.4 or less, further preferably 1.35 or less, even more preferably 1.3 or less, and even more preferably 1.27 or less. Furthermore, the above-mentioned refractive index values ​​are values ​​at a measurement temperature of 25°C.

[0207] The hardened film of the present invention preferably has sufficient hardness. Furthermore, the Young's modulus of the hardened film is preferably 2 or higher, more preferably 3 or higher, and especially preferably 4 or higher. An upper limit of 10 or lower is preferred.

[0208] Regarding the thickness of the hardened film of the present invention, it can be appropriately selected according to the application. For example, a film thickness of 3 μm or less is preferred, 1.5 μm or less is more preferred, and 1.0 μm or less is particularly preferred. There is no particular lower limit value, but 50 nm or more is preferred.

[0209] The hardened film of the present invention can be used as an optical functional layer in an image display device or a solid-state imaging element. Examples of optical functional layers include anti-reflective layers, low refractive index layers, and waveguides.

[0210] The hardened film of the present invention can also be used as a component adjacent to the aforementioned pixels in a filter having a plurality of pixels. For example, the hardened film of the present invention can be used as a partition between pixels of a filter. Examples of pixels include colored pixels, transparent pixels, pixels of near-infrared transmission filter layers, and pixels of near-infrared cutoff filter layers. Examples of colored pixels include red pixels, green pixels, blue pixels, magenta pixels, cyan pixels, and yellow pixels. Furthermore, the hardened film of the present invention can also be disposed on the light incident side or the light emitting side of a filter.

[0211] Furthermore, in solid-state imaging elements or image display devices having microlenses, the hardening film of the present invention can also be formed on the aforementioned microlenses and used.

[0212] <Method for Manufacturing a Hardened Film> The method for manufacturing a hardened film of the present invention is characterized by including: a step of coating the above-mentioned composition of the present invention onto a support to form a composition layer; and a step of hardening the composition layer, wherein the film formed by hardening the composition layer is obtained by passing all steps at a temperature of 150°C or below, i.e., a hardened film, and the step of hardening the composition layer includes a step of generating an acid or alkali from an acid-generating agent or alkali-generating agent contained in the composition layer by irradiating the composition layer with light or heating.

[0213] There are no particular limitations on the support for forming the constituent layers, and it can be appropriately selected according to the application. For example, substrates such as wafers formed of materials such as silicon, alkali-free glass, soda glass, Pyrex glass (registered trademark), and quartz glass can be used. InGaAs substrates are also preferred. Charge-coupled devices (CCDs), complementary metal-oxide-semiconductor (CMOS) films, and transparent conductive films can be formed on the support. Sometimes, a black matrix composed of light-shielding materials such as tungsten is also formed on the support. In order to improve the adhesion to the upper layer, prevent material diffusion, or planarize the substrate surface, a base layer can be provided on the support. Microlenses can also be used in the support.

[0214] The coating method for the composition can be a known method. Examples include drop casting; slot coating; spraying; roller coating; spin coating; cast coating; slot spin coating; pre-wetting (e.g., the method described in Japanese Patent Application Publication No. 2009-145395); inkjet printing (e.g., on-demand, piezoelectric, thermal), nozzle jetting and other ejection systems; flexographic printing; screen printing; gravure printing; reverse offset printing; metal mask printing and other similar methods; transfer printing using molds; nanoimprinting, etc. There are no particular limitations on the application methods in inkjet printing. For example, the methods described in "Inkjet Printing That Can Be Promoted and Used - Infinite Possibilities Appearing in Patents - Published February 2005, Sumitbe Techon Research Co., Ltd." (especially pages 115 to 133) or those described in Japanese Patent Application Publication Nos. 2003-262716, 2003-185831, 2003-261827, 2012-126830, and 2006-169325 can be cited. Furthermore, regarding the coating method for components used in optical sensors, please refer to International Publication Nos. 2017 / 030174 and 2017 / 018419, the contents of which are incorporated herein by reference.

[0215] The constituent layer formed on the support can be dried (pre-baked). When pre-baking, the pre-baking temperature is preferably below 150°C, below 120°C, and more preferably below 110°C. The lower limit can be, for example, set to 50°C or higher. The pre-baking time is preferably 10 to 300 seconds, more preferably 40 to 250 seconds, and further preferably 80 to 220 seconds. Pre-baking can be performed using a heating plate, oven, or the like.

[0216] When the composition of the present invention uses a photoacid generator or a photoalkali generator as the generator, it is preferable that the step of performing the above-mentioned curing treatment includes the step of exposing the composition layer to light.

[0217] Examples of light that can be used during exposure include gamma rays and i-rays. Light with wavelengths below 300 nm can also be used (preferably light with wavelengths of 180–300 nm). Examples of light with wavelengths below 300 nm include KrF rays (wavelength 248 nm) and ArF rays (wavelength 193 nm), with KrF rays (wavelength 248 nm) being preferred. Furthermore, light sources with wavelengths above 300 nm can also be used.

[0218] Furthermore, during exposure, exposure can be performed by continuous illumination of light or by pulsed illumination (pulse exposure). Moreover, pulse exposure is an exposure method in which light is repeatedly irradiated and paused in a short period of time (e.g., less than milliseconds).

[0219] The irradiation dose (exposure dose) is preferably 0.03 to 2.5 J / cm², and more preferably 0.05 to 1.0 J / cm². Regarding the oxygen concentration during exposure, it can be appropriately selected. Besides exposure under atmospheric conditions, it can be performed in a low-oxygen environment with an oxygen concentration of 19% by volume or less (e.g., 15% by volume, 5% by volume, or virtually oxygen-free), or in a high-oxygen environment with an oxygen concentration exceeding 21% by volume (e.g., 22% by volume, 30% by volume, or 50% by volume). Furthermore, the exposure illuminance can be appropriately set, typically within the range of 1000 W / m² to 100000 W / m² (e.g., 5000 W / m², 15000 W / m², or 35000 W / m²). Oxygen concentration and exposure illuminance can be appropriately combined, for example, it can be set to an oxygen concentration of 10% by volume and an illuminance of 10,000 W / m2, an oxygen concentration of 35% by volume and an illuminance of 20,000 W / m2, etc.

[0220] When the composition of the present invention uses a photoacid generator or a photoalkali generator as the generator, it is preferable that the step of performing the above-mentioned curing treatment includes the step of exposing the composition layer to light.

[0221] When the composition of the present invention uses a hot acid generating agent or a hot alkali generating agent as the generating agent, it is preferable that the step of performing the above-mentioned hardening treatment includes a step of heating the composition layer. The heating temperature is preferably 150°C or lower, 120°C or lower, and more preferably 110°C or lower. For example, the lower limit can be set to 80°C or higher. The heating time is preferably 60 to 1800 seconds, more preferably 120 to 900 seconds, and further preferably 180 to 600 seconds. The heating treatment can be performed using a heating plate, an oven, or the like. Furthermore, when post-baking is performed during the formation of the composition layer, the post-baking can be a heating step within the hardening treatment steps. That is, during post-baking, the composition layer can be dried, and an acid or alkali can be generated from the hot acid generating agent or hot alkali generating agent contained in the composition layer to perform the hardening treatment of the composition layer.

[0222] The method for manufacturing the hardened film of the present invention can also be used to manufacture filters, image display devices, solid-state imaging elements, etc.

[0223] <Method for Forming a Pattern> Next, a method for forming a pattern using the components of the present invention will be described. Examples of pattern forming methods include a pattern forming method based on photolithography and a pattern forming method based on etching.

[0224] The pattern formation based on photolithography preferably includes the following steps: a step of coating the composition of the present invention onto a support to form a composition layer; a step of exposing the composition layer in a patterned manner; and a step of developing to remove the unexposed portions of the composition layer to form a pattern. Depending on the need, a step of baking the composition layer (pre-baking step) and a step of baking the developed pattern (post-baking step) may also be provided.

[0225] In the step of forming the composition layer, the composition of the present invention is coated onto a support to form the composition layer. The support described above can be cited as an example of a support. Furthermore, the coating method described above can be cited as a method for coating the composition.

[0226] The constituent layer formed on the support can be dried (pre-baked). When pre-baking, the pre-baking temperature is preferably 150°C or lower, 120°C or lower, and more preferably 110°C or lower. The lower limit can be, for example, set to 50°C or higher. The pre-baking time is preferably 10 to 300 seconds, more preferably 40 to 250 seconds, and further preferably 80 to 220 seconds. Pre-baking can be performed using a heating plate, oven, or the like.

[0227] Next, the constituent layer is exposed in a pattern (exposure step). For example, using a stepper or scanning exposure machine, the constituent layer is exposed through a mask with a predetermined mask pattern, thereby enabling patterned exposure. This allows the exposed portion to harden.

[0228] Examples of light that can be used during exposure include gamma rays and i-rays. Light with wavelengths below 300 nm can also be used (preferably light with wavelengths of 180–300 nm). Examples of light with wavelengths below 300 nm include KrF rays (wavelength 248 nm) and ArF rays (wavelength 193 nm), with KrF rays (wavelength 248 nm) being preferred. Furthermore, light sources with wavelengths above 300 nm can also be used.

[0229] Furthermore, during exposure, exposure can be performed by continuous illumination of light or by pulsed illumination (pulse exposure). Moreover, pulse exposure is an exposure method in which light is repeatedly irradiated and paused in a short period of time (e.g., less than milliseconds).

[0230] The irradiation dose (exposure dose) is preferably 0.03 to 2.5 J / cm², and more preferably 0.05 to 1.0 J / cm². Regarding the oxygen concentration during exposure, it can be appropriately selected. Besides exposure under atmospheric conditions, it can be performed in a low-oxygen environment with an oxygen concentration of 19% by volume or less (e.g., 15% by volume, 5% by volume, or virtually oxygen-free), or in a high-oxygen environment with an oxygen concentration exceeding 21% by volume (e.g., 22% by volume, 30% by volume, or 50% by volume). Furthermore, the exposure illuminance can be appropriately set, typically within the range of 1000 W / m² to 100000 W / m² (e.g., 5000 W / m², 15000 W / m², or 35000 W / m²). Oxygen concentration and exposure illuminance can be appropriately combined, for example, it can be set to an oxygen concentration of 10% by volume and an illuminance of 10,000 W / m2, an oxygen concentration of 35% by volume and an illuminance of 20,000 W / m2, etc.

[0231] Next, the unexposed portions of the constituent layer are removed by development to form a pattern. The removal of the unexposed portions of the constituent layer can be performed using a developing solution. Here, the unexposed portions of the constituent layer from the exposure step dissolve in the developing solution, leaving only the photocured portion. The temperature of the developing solution is preferably 20–30°C. The development time is preferably 20–180 seconds. Furthermore, to improve residue removal, the step of repeatedly discarding the developing solution every 60 seconds and then supplying new developing solution can be repeated several times.

[0232] Developers can include organic solvents and alkaline developers, with alkaline developers being preferred. As an alkaline developer, an alkaline aqueous solution (alkaline developer) obtained by diluting an alkaline agent with pure water is preferred. Examples of alkaline agents include, for example, organic alkaline compounds such as ammonia, ethylamine, diethylamine, dimethylethanolamine, diglycolamine, hydroxylamine, ethylenediamine, tetramethylammonium hydroxide, tetraethylammonium hydroxide, tetrapropylammonium hydroxide, tetrabutylammonium hydroxide, ethyltrimethylammonium hydroxide, benzyltrimethylammonium hydroxide, dimethylbis(2-hydroxyethyl)ammonium hydroxide, choline, pyrrole, piperidine, and 1,8-diazabicyclo-[5.4.0]-7-undecene, or inorganic alkaline compounds such as sodium hydroxide, potassium hydroxide, sodium carbonate, sodium bicarbonate, sodium silicate, and sodium metasilicate. From an environmental and safety perspective, alkaline agents with large molecular weights are preferred. The concentration of the alkaline agent in the alkaline aqueous solution is preferably 0.001–10% by mass, and more preferably 0.01–1% by mass. Furthermore, the developer may further contain surfactants. From the viewpoint of convenient transportation or storage, the developer can be temporarily prepared as a concentrated solution and diluted to the required concentration before use. There is no particular limitation on the dilution ratio; for example, it can be set in the range of 1.5–100 times. It is also preferable to rinse (wash) with pure water after development. Furthermore, rinsing is preferably performed by supplying rinsing solution to the developed composition layer while rotating the support on which the developed composition layer has formed. It is also preferable to perform rinsing by moving the nozzle dispensing the rinsing solution from the center of the support to its periphery. In this case, when moving the nozzle from the center of the support to the periphery, the moving speed of the nozzle can be gradually reduced. By rinsing in this manner, in-plane deviation during rinsing can be suppressed. Alternatively, the same effect can be achieved by gradually reducing the rotational speed of the support while moving the nozzle from the center to the periphery of the support.

[0233] After development, after drying, additional exposure and heat treatment (post-baking) can be performed.

[0234] When post-baking is performed, a post-baking temperature of 150°C or lower is preferred. An upper limit of 120°C or lower is more preferred, and 100°C or lower is even more preferred. There is no particular limitation on the lower limit of the post-baking temperature as long as it promotes film curing; 50°C or higher is preferred, and 75°C or higher is even more preferred. A post-baking time of 1 minute or more is preferred, 5 minutes or more is even more preferred, and 10 minutes or more is even more preferred. There is no particular limitation on the upper limit, but from a production point of view, 20 minutes or less is preferred.

[0235] When performing additional exposure processing, it is preferable to use light with a wavelength of 400 nm or less for exposure. Furthermore, the additional exposure processing can be performed by the method described in Korean Patent Publication No. 10-2017-0122130.

[0236] The pattern formation based on the etching method preferably includes the following steps: coating the composition of the present invention onto a support, forming the hardened film of the present invention, i.e., the hardened layer, on the support using the above-described method for manufacturing the hardened film of the present invention; forming a photoresist layer on the hardened layer; exposing the photoresist layer in a patterned manner and then developing it to form a resist pattern; using the resist pattern as a mask and etching the hardened layer; and peeling off the resist pattern from the hardened layer.

[0237] There are no particular limitations on the resist used to form the resist pattern. For example, the resist containing alkali-soluble phenolic resin and naphthoquinone bisazide can be used as described on pages 16 to 22 of the book "New Polymer Materials One Point 3 Microfabrication and Resist Author: Saburo Nogaki, Publisher: Kyoritsu Publishing Co., Ltd. (First edition, first printing, November 15, 1987)". Furthermore, the resists described in the embodiments of Japanese Patent Nos. 2568883, 2761786, 2711590, 2987526, 3133881, 3501427, 3373072, 3361636, and Japanese Unexamined Patent Application Publication No. 06-054383 can also be used. Additionally, so-called chemically amplified resists can also be used as resists. Regarding chemical amplification resists, examples include the resists described on page 129 and later in "New Developments in Opto-functional Polymer Materials, 1st Printing, May 31, 1996, Supervised by Kunihiro Ichimura, Publisher: CMC" (especially the resists described near page 131 that contain resins with hydroxyl groups of polyhydroxystyrene protected by acid-degradable groups, or the ESCAP resist (Environmentally Stable Chemical Amplification Positive Resist) described near page 131). Furthermore, the resists described in the embodiments of Japanese Patent Application Publication No. 2008-268875, Japanese Patent Application Publication No. 2008-249890, Japanese Patent Application Publication No. 2009-244829, Japanese Patent Application Publication No. 2011-013581, Japanese Patent Application Publication No. 2011-232657, Japanese Patent Application Publication No. 2012-003070, Japanese Patent Application Publication No. 2012-003071, Japanese Patent No. 3638068, Japanese Patent No. 4006492, Japanese Patent No. 4000407, and Japanese Patent No. 4194249 can also be used.

[0238] The etching method for the hardened layer can be either dry etching or wet etching. Dry etching is preferred.

[0239] Regarding dry etching of the hardened layer, it is preferable to use a mixture of fluorine-based gas and O2 as the etching gas. The mixing ratio of fluorine-based gas to O2 (fluorine-based gas / O2) is preferably 4 / 1 to 1 / 5 in terms of flow rate, and more preferably 1 / 2 to 1 / 4. Examples of fluorine-based gases include CF4, C2F6, C3F8, C2F4, C4F8, C4F6, C5F8, and CHF3, with C4F6, C5F8, C4F8, and CHF3 being preferred, C4F6 and C5F8 being more preferred, and C4F6 being even more preferred. One fluorine-based gas can be selected from the above group, and the mixture can contain two or more fluorine-based gases.

[0240] From the viewpoint of maintaining the stability of the partial voltage control of the etching plasma and the perpendicularity of the etched shape, the mixed gas can be mixed with rare gases such as helium (He), neon (Ne), argon (Ar), krypton (Kr), and xenon (Xe) in addition to the fluorine-based gases and O2. One or more gases can be selected from the above group as other gases that can be mixed. When O2 is set to 1 in the flow rate ratio, the mixing ratio of the other gases is preferably greater than 0 and less than 25, more than 10 and less than 20, and particularly preferably 16.

[0241] The internal pressure of the chamber during dry etching is preferably 0.5 to 6.0 Pa, and even better is 1 to 5 Pa.

[0242] Regarding dry etching conditions, the conditions described in International Publication No. 2015 / 190374, paragraphs 0102 to 0108, and Japanese Patent Application Publication No. 2016-014856 can be cited, and such contents are incorporated into this specification.

[0243] <Structure> Next, the structure of the present invention will be described using drawings. FIG2 is a side sectional view showing one embodiment of the structure of the present invention, and FIG3 is a top view viewed from the top of the support in the same structure. As shown in FIG2 and FIG3, the structure 100 of the present invention has a support 11, a partition 12 disposed on the support 11, and pixels 14 disposed on the support 11 and divided into regions by the partition 12. Examples of pixels include colored pixels, transparent pixels, pixels of near-infrared transmission filter layers, and pixels of near-infrared cutoff filter layers. Examples of colored pixels include red pixels, green pixels, blue pixels, magenta pixels, cyan pixels, and yellow pixels.

[0244] In the structure of the present invention, there is no particular limitation on the type of support 11. Substrates used in various electronic devices such as solid-state imaging elements (silicon wafers, silicon carbide wafers, silicon nitride wafers, sapphire wafers, glass wafers, etc.) can be used. Furthermore, substrates for solid-state imaging elements with photodiodes formed on them can also be used. Additionally, a base layer can be provided on these substrates as needed, which is used to improve adhesion to the upper layer, prevent material diffusion, or planarize the surface.

[0245] As shown in Figures 2 and 3, partitions 12 are formed on the support 11. In this embodiment, as shown in Figure 3, in the top view viewed from directly above the support 11, the partitions 12 are formed in a grid pattern. Furthermore, in this embodiment, the shape of the area divided by the partitions 12 on the support 11 (hereinafter also referred to as the shape of the opening of the partition) is square, but the shape of the opening of the partition is not particularly limited, and can be, for example, a rectangle, a circle, an ellipse, or a polygon.

[0246] The partition 12 can be formed using the composition of the present invention. Specifically, it can be formed by a step of forming a composition layer using the composition of the present invention and a step of forming a pattern on the composition layer by photolithography or dry etching.

[0247] The width W1 of the adjacent 12 is preferably 20-500nm. A lower limit of 30nm or more is preferred, 40nm or more is better, and 50nm or more is even better. An upper limit of 300nm or less is preferred, 200nm or less is better, and 100nm or less is even better. Furthermore, the height H1 of the adjacent 12 is preferably 200nm or more, 300nm or more is better, and 400nm or more is even better. An upper limit of 200% of the thickness of pixel 14 is preferred, 150% or less of the thickness of pixel 14 is better, and essentially the same as the thickness of pixel 14 is even better. The height-to-width ratio (height / width) of the adjacent 12 is preferably 1-100, 5-50 is better, and 5-30 is even better.

[0248] A pixel 14 is formed on the support 11 in a region (the opening of the partition) divided by the partition 12.

[0249] The width L1 of pixel 14 can be appropriately selected according to the application. For example, 500-2000nm is preferred, 500-1500nm is more preferred, and 500-1000nm is even more preferred. The height (thickness) H2 of pixel 14 can be appropriately selected according to the application. For example, 300-1000nm is preferred, 300-800nm ​​is more preferred, and 300-600nm is even more preferred. Furthermore, it is preferred that the height H2 of pixel 14 is 50-150% of the height H1 of the adjacent 12, 70-130% is more preferred, and 90-110% is even more preferred.

[0250] In the structure of the present invention, it is preferable to provide a protective layer on the surface of the partition wall. By providing a protective layer on the surface of the partition wall 12, the adhesion between the partition wall 12 and the pixel 14 can be improved. Various inorganic or organic materials can be used as the material for the protective layer. For example, examples of organic materials include acrylic resins, polystyrene resins, polyimide resins, and organic SOG (Spin On Glass) resins. Furthermore, it is also possible to use a composition containing compounds having groups containing ethylene unsaturated bonds.

[0251] The structure of the present invention can be preferably used in filters, solid-state imaging elements and image display devices, etc.

[0252] <Filter> The filter of the present invention has the hardened film of the present invention as described above. Examples of filters having the hardened film of the present invention include filters in which each pixel is embedded in a region divided by a partition formed by the film of the present invention. Examples of pixels include colored pixels, transparent pixels, pixels with near-infrared transmission filter layers, and pixels with near-infrared cutoff filter layers.

[0253] It is preferable that the width of the pixels included in the filter is 0.4 to 10.0 μm. A lower limit of 0.4 μm or more is preferable, 0.5 μm or more is more preferable, and 0.6 μm or more is even more preferable. An upper limit of 5.0 μm or less is preferable, 2.0 μm or less is more preferable, 1.0 μm or less is even more preferable, and 0.8 μm or less is even more preferable. Furthermore, it is preferable that the Young's modulus of the pixel is 0.5 to 20 GPa, and 2.5 to 15 GPa is more preferable.

[0254] It is preferable that each pixel included in the filter has high flatness. Specifically, it is preferable that the surface roughness Ra of the pixel is 100 nm or less, more preferably 40 nm or less, and even more preferably 15 nm or less. There is no specified lower limit, but for example, 0.1 nm or more is preferable. The surface roughness of the pixel can be measured, for example, using an AFM (Atomic Force Microscope) Dimension3100 manufactured by Veeco. Also, the water contact angle on the pixel can be appropriately set to a preferred value, but typically in the range of 50 to 110°. The contact angle can be measured, for example, using a contact angle meter CV-DT･A type (manufactured by Kyowa Interface Science Co.,LTD.). Also, it is preferable that the volume resistivity of the pixel is high. Specifically, it is preferable that the volume resistivity of the pixel is 109 Ω･cm or more, and even more preferably 1011 Ω･cm or more. There is no specified upper limit, but for example, 1014 Ω･cm or less is preferable. The volume resistivity of a pixel can be measured using an ultra-high resistance meter 5410 (manufactured by Advantest Corporation).

[0255] A protective layer can be provided on the surface of the pixels of the filter. By providing a protective layer, various functions can be imparted, such as oxidation resistance, low reflectivity, hydrophilicity / hydrophobicity, and shielding of light of specific wavelengths (ultraviolet, near-infrared, etc.). The thickness of the protective layer is preferably 0.01 to 10 μm, and more preferably 0.1 to 5 μm. As a method for forming the protective layer, examples include methods of forming by coating a composition for forming a protective layer, chemical vapor deposition, and methods of attaching the molded resin with an adhesive material. Furthermore, the protective layer described in paragraphs 0073 to 0092 of Japanese Patent Application Publication No. 2017-151176 can also be used.

[0256] <Solid-State Imaging Element> The solid-state imaging element of the present invention comprises the curing film of the present invention described above. The structure of the solid-state imaging element is not particularly limited as long as it functions as a solid-state imaging element.

[0257] <Image Display Device> The hardened film of the present invention can also be used in image display devices. Examples of image display devices include liquid crystal display devices and organic electroluminescent display devices. Definitions of image display devices and detailed descriptions of various image display devices are provided, for example, in "Electronic Display Devices" (by Akio Sasaki, published by Kogyo Chosakai Publishing Co., Ltd., 1990) and "Display Devices" (by Junsho Ibuki, published by Sangyo Tosho Publishing Co., Ltd., 1989). Furthermore, regarding liquid crystal display devices, for example, it is described in "Next-Generation Liquid Crystal Display Technology" (edited by Tatsuo Uchida, published by Kogyo Chosakai Publishing Co., Ltd., 1994). There are no particular limitations on the liquid crystal display devices to which the present invention can be applied; for example, it can be applied to various types of liquid crystal display devices described in the aforementioned "Next-Generation Liquid Crystal Display Technology".

[0258] Furthermore, the organic electroluminescent display device can be a microdisplay. The diagonal length of the display surface of the microdisplay can be, for example, 4 inches or less, 2 inches or less, 1 inch or less, or 0.2 inches or less. There are no particular limitations on the application of the microdisplay, and examples include electronic viewfinders, smart glasses, head-mounted displays, etc.

[0259] Organic electroluminescent display devices may have a light source composed of white organic electroluminescent elements. A series connection is preferred for the white organic electroluminescent elements. Regarding the series connection structure of organic electroluminescent elements, it is described in Japanese Patent Application Publication No. 2003-045676, supervised by Akiyoshi Mikami, "The Forefront of Organic EL Technology Development - High Brightness, High Precision, Long Lifespan, and Technical Secrets Collection -", Technical Information Association, pp. 326-328, 2008, etc. It is preferable that the white light emitted by the organic EL element has strong maximum emission peaks in the blue region (430nm-485nm), green region (530nm-580nm), and yellow region (580nm-620nm). In addition to these emission peaks, it is even more preferable that it has a maximum emission peak in the red region (650nm-700nm).

[0260] An organic light-emitting display device may have a color filter. The color filter may be disposed on a substrate layer. Furthermore, in an organic light-emitting display device that combines a color filter and a white organic light-emitting element to extract the three primary colors of light, transparent pixels may be provided, and white light may be directly utilized for emission. This also improves the brightness of the display device. Furthermore, the organic light-emitting display device may have a lens on the color filter. The shape of the lens can be various shapes derived from optical design, such as convex or concave. For example, by making it concave (concave lens), the light focusing ability is easily improved. Furthermore, the lens may be in direct contact with the color filter, or other layers such as a bonding layer or a planarization layer may be disposed between the lens and the color filter. Furthermore, the lens may also be used in the configuration described in International Publication No. 2018 / 135189. [Example]

[0261] Hereinafter, embodiments will be provided to further illustrate the present invention. The materials, amounts, proportions, processing contents, processing order, etc., shown in the following embodiments can be appropriately modified as long as they do not depart from the spirit of the present invention. Therefore, the scope of the present invention is not limited to the specific examples shown below.

[0262] <Preparation of the composition> The composition was prepared by mixing the raw materials listed in the table below and filtering them using a DFA4201NIEY (0.45μm nylon filter) manufactured by NIHON PALL Corporation.

[0263] [Table 1] Silicon dioxide particle liquid Acid-generating agents or base-generating agents resin silanol compounds surfactants solvent type Dosage (by weight) Shape of silicon dioxide particles type Dosage (by weight) type type Dosage (by weight) type Dosage (by weight) type Dosage (by weight) type Dosage (by weight) Example 1 P1 44.8 Rosary B-1 0.4 Photoacid generator - - - - F-1 0.2 S-1 8 S-2 42.6 S-3 0 S-4 2 S-5 1 S-6 1 Example 2 P2 44.8 hollow structure B-1 0.4 Photoacid generator - - - - F-1 0.2 S-1 8 S-2 42.6 S-3 0 S-4 2 S-5 1 S-6 1 Example 3 P1 44.8 Rosary B-2 0.4 Photoalkali generating agent - - - - F-1 0.2 S-1 8 S-2 42.6 S-3 0 S-4 2 S-5 1 S-6 1 Example 4 P2 44.8 hollow structure B-2 0.4 Photoalkali generating agent - - - - F-1 0.2 S-1 8 S-2 42.6 S-3 0 S-4 2 S-5 1 S-6 1 Example 5 P1 45 Rosary B-1 0.2 Photoacid generator - - - - F-1 0.2 S-1 8 S-2 42.6 S-3 0 S-4 2 S-5 1 S-6 1

[0264] [Table 2] Silicon dioxide particle liquid Acid-generating agents or base-generating agents resin silanol compounds surfactants solvent type Dosage (by weight) Shape of silicon dioxide particles type Dosage (by weight) type type Dosage (by weight) type Dosage (by weight) type Dosage (by weight) type Dosage (by weight) Example 6 P1 44.4 Rosary B-1 0.8 Photoacid generator - - - - F-1 0.2 S-1 8 S-2 42.6 S-3 0 S-4 2 S-5 1 S-6 1 Example 7 P1 44 Rosary B-1 1.2 Photoacid generator - - - - F-1 0.2 S-1 8 S-2 42.6 S-3 0 S-4 2 S-5 1 S-6 1 Example 8 P1 44.8 Rosary B-3 0.4 Photoacid generator - - - - F-1 0.2 S-1 8 S-2 42.6 S-3 0 S-4 2 S-5 1 S-6 1 Example 9 P1 44.8 Rosary B-4 0.4 Photoalkali generating agent - - - - F-1 0.2 S-1 8 S-2 42.6 S-3 0 S-4 2 S-5 1 S-6 1 Example 10 P1 44.8 Rosary B-5 0.4 thermal acid generator - - - - F-1 0.2 S-1 8 S-2 42.6 S-3 0 S-4 2 S-5 1 S-6 1

[0265] [Table 3] Silicon dioxide particle liquid Acid-generating agents or base-generating agents resin silanol compounds surfactants solvent type Dosage (by weight) Shape of silicon dioxide particles type Dosage (by weight) type type Dosage (by weight) type Dosage (by weight) type Dosage (by weight) type Dosage (by weight) Example 11 P1 44.8 Rosary B-6 0.4 Hot alkali generating agent - - - - F-1 0.2 S-1 8 S-2 42.6 S-3 0 S-4 2 S-5 1 S-6 1 Example 12 P1 43.8 Rosary B-1 0.4 Photoacid generator C-1 1.0 - - F-1 0.2 S-1 8 S-2 42.6 S-3 0 S-4 2 S-5 1 S-6 1 Example 13 P1 43.8 Rosary B-2 0.4 Photoalkali generating agent C-2 1.0 - - F-1 0.2 S-1 8 S-2 42.6 S-3 0 S-4 2 S-5 1 S-6 1 Example 14 P1 43.8 Rosary B-2 0.4 Photoalkali generating agent C-3 2.5 - - F-1 0.2 S-1 8 S-2 41.1 S-3 0 S-4 2 S-5 1 S-6 1 Example 15 P1 42.8 Rosary B-2 0.4 Photoalkali generating agent C-3 5.0 - - F-1 0.2 S-1 8 S-2 39.6 S-3 0 S-4 2 S-5 1 S-6 1

[0266] [Table 4] Silicon dioxide particle liquid Acid-generating agents or base-generating agents resin silanol compounds surfactants solvent type Dosage (by weight) Shape of silicon dioxide particles type Dosage (by weight) type type Dosage (by weight) type Dosage (by weight) type Dosage (by weight) type Dosage (by weight) Example 16 P1 41.8 Rosary B-2 0.4 Photoalkali generating agent C-3 7.5 - - F-1 0.2 S-1 8 S-2 38.1 S-3 0 S-4 2 S-5 1 S-6 1 Example 17 P1 44 Rosary B-1 0.4 Photoacid generator - - D-1 0.8 F-1 0.2 S-1 8 S-2 42.6 S-3 0 S-4 2 S-5 1 S-6 1 Example 18 P1 44 Rosary B-2 0.4 Photoalkali generating agent - - D-2 0.8 F-1 0.2 S-1 8 S-2 42.6 S-3 0 S-4 2 S-5 1 S-6 1 Example 19 P1 43.2 Rosary B-2 0.4 Photoalkali generating agent - - D-2 1.6 F-1 0.2 S-1 8 S-2 42.6 S-3 0 S-4 2 S-5 1 S-6 1 Example 20 P1 30 Rosary B-2 1.2 Photoalkali generating agent C-3 7.5 - - F-1 0.2 S-1 8 S-2 49.1 S-3 0 S-4 2 S-5 1 S-6 1

[0267] [Table 5] Silicon dioxide particle liquid Acid-generating agents or base-generating agents resin silanol compounds surfactants solvent type Dosage (by weight) Shape of silicon dioxide particles type Dosage (by weight) type type Dosage (by weight) type Dosage (by weight) type Dosage (by weight) type Dosage (by weight) Example 21 P3 44.8 solid B-1 0.4 Photoacid generator - - - - F-1 0.2 S-1 8 S-2 43 S-3 0 S-4 2 S-5 1 S-6 1 Example 22 P3 44.8 solid B-2 0.4 Photoalkali generating agent - - - - F-1 0.2 S-1 8 S-2 43 S-3 0 S-4 2 S-5 1 S-6 1 Example 23 P1 44.8 Rosary B-1 0.4 Photoacid generator - - - - F-2 0.2 S-1 8 S-2 42.6 S-3 0 S-4 2 S-5 1 S-6 1 Example 24 P1 44.8 Rosary B-7 0.4 thermal acid generator - - - - F-1 0.2 S-1 8 S-2 42.6 S-3 0 S-4 2 S-5 1 S-6 1 Example 25 P2 twenty two hollow structure B-7 1.2 thermal acid generator C-3 10.5 - - F-1 0.2 S-1 8 S-2 54.1 S-3 0 S-4 2 S-5 1 S-6 1

[0268] [Table 6] Silicon dioxide particle liquid Acid-generating agents or base-generating agents resin silanol compounds surfactants solvent type Dosage (by weight) Shape of silicon dioxide particles type Dosage (by weight) type type Dosage (by weight) type Dosage (by weight) type Dosage (by weight) type Dosage (by weight) Example 26 P1 44.8 Rosary B-2 0.5 Photoalkali generating agent - - E-1 0.5 F-1 0.1 S-1 8 S-2 42.1 S-3 0 S-4 2 S-5 1 S-6 1 Example 27 P1 41.8 Rosary B-2 0.5 Photoalkali generating agent - - E-1 1 F-1 0.1 S-1 8 S-2 44.6 S-3 0 S-4 2 S-5 1 S-6 1 Example 28 P1 38.8 Rosary B-2 0.5 Photoalkali generating agent - - E-1 2 F-1 0.1 S-1 8 S-2 46.6 S-3 0 S-4 2 S-5 1 S-6 1 Example 29 P1 41.8 Rosary B-2 1 Photoalkali generating agent - - E-1 0.5 F-1 0.1 S-1 8 S-2 44.6 S-3 0 S-4 2 S-5 1 S-6 1 Example 30 P1 38.8 Rosary B-2 1 Photoalkali generating agent - - E-1 1 F-1 0.1 S-1 8 S-2 46.6 S-3 0 S-4 2 S-5 1 S-6 1

[0269] [Table 7] Silicon dioxide particle liquid Acid-generating agents or base-generating agents resin silanol compounds surfactants solvent type Dosage (by weight) Shape of silicon dioxide particles type Dosage (by weight) type type Dosage (by weight) type Dosage (by weight) type Dosage (by weight) type Dosage (by weight) Example 31 P1 34.7 Rosary B-2 1 Photoalkali generating agent - - E-1 2 F-1 0.1 S-1 8 S-2 50.2 S-3 0 S-4 2 S-5 1 S-6 1 Example 32 P1 38.8 Rosary B-1 1 Photoalkali generating agent - - E-1 1 F-1 0.1 S-1 8 S-2 46.6 S-3 0 S-4 2 S-5 1 S-6 1 Example 33 P1 38.8 Rosary B-3 1 Photoalkali generating agent - - E-1 1 F-1 0.1 S-1 8 S-2 46.6 S-3 0 S-4 2 S-5 1 S-6 1 Example 34 P1 38.8 Rosary B-4 1 Photoalkali generating agent - - E-1 1 F-1 0.1 S-1 8 S-2 46.6 S-3 0 S-4 2 S-5 1 S-6 1

[0270] [Table 8] Silicon dioxide particle liquid Acid-generating agents or base-generating agents resin silanol compounds surfactants solvent type Dosage (by weight) Shape of silicon dioxide particles type Dosage (by weight) type type Dosage (by weight) type Dosage (by weight) type Dosage (by weight) type Dosage (by weight) Example 35 P1 38.8 Rosary B-2 1 Photoalkali generating agent - - E-2 1 F-1 0.1 S-1 8 S-2 46.6 S-3 0 S-4 2 S-5 1 S-6 1 Example 36 P1 38.8 Rosary B-2 1 Photoalkali generating agent - - E-3 1 F-1 0.1 S-1 8 S-2 46.6 S-3 0 S-4 2 S-5 1 S-6 1 Example 37 P1 38.8 Rosary B-2 1 Photoalkali generating agent - - E-4 1 F-1 0.1 S-1 8 S-2 44.6 S-3 0 S-4 2 S-5 1 S-6 1 Example 38 P1 38.8 Rosary B-2 1 Photoalkali generating agent - - E-5 1 F-1 0.1 S-1 8 S-2 44.6 S-3 0 S-4 2 S-5 1 S-6 1

[0271] [Table 9] Silicon dioxide particle liquid Acid-generating agents or base-generating agents resin silanol compounds surfactants solvent type Dosage (by weight) Shape of silicon dioxide particles type Dosage (by weight) type type Dosage (by weight) type Dosage (by weight) type Dosage (by weight) type Dosage (by weight) Comparative Example 1 P3 44.8 solid - - - - - - - F-1 0.2 S-1 8 S-2 43 S-3 0 S-4 2 S-5 1 S-6 1 Comparative Example 2 P2 20 hollow structure B-7 0.3 thermal acid generator C-3 14.0 - - F-1 0.2 S-1 8 S-2 53.5 S-3 0 S-4 2 S-5 1 S-6 1

[0272] The details of the raw materials listed in the table above, with the abbreviations indicated, are as follows.

[0273] [Silica Particle Liquid] P1: A propylene glycol monomethyl ether solution (silica particle concentration 20% by mass) of a plurality of spherical silica particles with an average particle size of 15 nm connected in a beaded shape by silica containing metal oxide (connecting material) P2: Thrylya 4110 (manufactured by JGC Catalysts and Chemicals Ltd., a hollow silica particle liquid with an average particle size of 60 nm, silica particle concentration 20% by mass. This silica particle liquid does not contain either a plurality of spherical silica particles connected in a beaded shape or a plurality of spherical silica particles connected in a planar shape) P3: MIBK-ST (Nissan Chemical) Industries, LTD. manufactures a solid silica particle liquid with an average particle size of 15 nm and a silica particle concentration of 20% by mass. This silica particle liquid system does not contain any of the following: silica particles consisting of a plurality of spherical silica particles connected in a beaded manner, silica particles consisting of a plurality of spherical silica particles connected in a planar manner, or hollow silica particles.

[0274] Furthermore, the silica particles contained in silica particle liquids P1 to P3 are all particles with silanol groups. Also, in silica particle liquid P1, the average particle size of the spherical silica particles is calculated by averaging the number of equivalent circle diameters in the projected images of the spherical portions of 50 spherical silica particles measured by transmission electron microscopy (TEM). Furthermore, in silica particle liquid P1, the presence of silica particles in the form of multiple spherical silica particles connected in a beaded manner is investigated by TEM observation.

[0275] [Acid Generator, Base Generator] B-1: IRGACURE PAG-103 (manufactured by BASF, a compound with the following structure, an oxime sulfonate compound, a photoacid generator) [Chemical Formula 5] B-2: WPBG-018 (manufactured by FUJIFILM Wako Pure Chemical Corporation, a compound with the following structure, a carbamate compound, a photoacid generator) [Chemical Formula 6] B-3: MOP-trisulfite (manufactured by Sanwa Chemical Co., Ltd., a compound with the following structure, a trisulfite compound, a photoacid generator) [Chemical Formula 7] B-4: WPBG-165 (manufactured by FUJIFILM Wako Pure Chemical Corporation, a compound with the following structure, a carbamate compound, a photoacid generator) [Chemical Formula 8] B-5: SAN-AID SI-60 (manufactured by SANSHIN CHEMICAL INDUSTRY CO.,LTD., an SbF6-series strontium salt, a hot acid generator) B-6: U-CAT SA1 (Manufactured by San-Apro Ltd., compounds with the following structure, quaternary ammonium salts, and hot alkali generating agents) [Chemical Formula 9] B-7: SI-106 (Midori Kagaku Co., Ltd., N-(camphorsulfonoxy)succinimide, succinimide compounds, and hot acid generating agents)

[0276] [Resin] C-1: SILAPLANE FM-DA21 (manufactured by JNC CORPORATION, quantity average molecular weight 5000, resin with the following structure) [Chemical Formula 10] C-2: SILAPLANE FM-3321 (manufactured by JNC CORPORATION), quantity average molecular weight 5000, resin with the following structure) [Chemical Formula 11] C-3: A polysiloxane resin solution prepared by the following method was added to a 500 mL three-necked flask containing 74.23 g (0.55 mol) of methyltrimethoxysilane, 69.41 g (0.35 mol) of phenyltrimethoxysilane, 21.82 g (0.1 mol) of trifluoropropyltrimethoxysilane, and 132.4 g of diacetone alcohol. While stirring at room temperature for 30 minutes, an aqueous solution of phosphoric acid containing 0.319 g of phosphoric acid dissolved in 52.02 g of water was added. Subsequently, the flask was immersed in an oil bath at 40°C and stirred for 30 minutes. After another 30 minutes, the oil bath temperature was increased to 115°C. One hour after the start of heating, the internal temperature of the solution reached 100°C, and then it was heated and stirred for 35 minutes (internal temperature 100–110°C). Diacetone alcohol was added to the obtained polysiloxane resin solution to achieve a polysiloxane concentration of 40% by mass, thus obtaining a polysiloxane resin solution. The weight-average molecular weight of the obtained polysiloxane resin was 4300.

[0277] [Silanol Compounds] D-1: X-12-1135 (Manufactured by Shin-Etsu Chemical Co., Ltd., compound with a molecular weight of less than 1000) D-2: KBP-90 (Manufactured by Shin-Etsu Chemical Co., Ltd., compound with a molecular weight of less than 1000)

[0278] [Silane Coupling Agent] E-1: KBM-503 (manufactured by Shin-Etsu Chemical Co., Ltd., a compound with the following structure, a compound having an alkoxysilyl group) E-2: KBM-4803 (manufactured by Shin-Etsu Chemical Co., Ltd., a compound with the following structure, a compound having an alkoxysilyl group) E-3: KBM-3086 (manufactured by Shin-Etsu Chemical Co., Ltd., a compound with the following structure, a compound having an alkoxysilyl group) E-4: KBM-9659 (manufactured by Shin-Etsu Chemical Co., Ltd., a compound with the following structure, a compound having an alkoxysilyl group) E-5: X-12-5263HP (manufactured by Shin-Etsu Chemical Co., Ltd., a compound with the following structure, a compound having an alkoxysilyl group) [Chemical Formula 12]

[0279] [Surfactant] F-1: A compound with the following structure (polysiloxane surfactant, methanol-modified polysiloxane compound. Weight average molecular weight 3000, dynamic viscosity at 25°C 45 mm² / s) [Chemical Formula 13] F-2: A compound with the following structure (fluorine surfactant, weight average molecular weight 14000, the percentage of repeating units is expressed in moles) [Chemical Formula 14]

[0280] [Solvents] S-1: 1,4-Butanediol diacetate (boiling point 232℃, viscosity 3.1 mPa·s, molecular weight 174) S-2: Propylene glycol monomethyl ether acetate (boiling point 146℃, viscosity 1.1 mPa·s, molecular weight 132) S-3: Propylene glycol monomethyl ether (boiling point 120℃, viscosity 1.8 mPa·s, molecular weight 90) S-4: Methanol (boiling point 64℃, viscosity 0.6 mPa·s) S-5: Ethanol (boiling point 78℃, viscosity 1.2 mPa·s) S-6: Water (boiling point 100℃, viscosity 0.9 mPa·s)

[0281] <Evaluation of Refractive Index> For the compositions of Examples 1-9 and 12-23, each composition was spin-coated onto a silicon wafer with a diameter of 8 inches (20.32 cm) to achieve a film thickness of 0.4 μm. Then, exposure was performed using an ultra-high pressure mercury lamp at an exposure illuminance of 20 mW / cm² and an exposure dose of 1000 mJ / cm². Next, the mixture was heated on a hot plate at 100°C for 20 minutes and then cooled to form a hardened film. For the compositions of Examples 10, 11, 24, 25, and Comparative Examples 1 and 2, the compositions were spin-coated onto a silicon wafer with a diameter of 8 inches (20.32 cm) to achieve a film thickness of 0.4 μm. Next, the mixture was heated on a hot plate at 100°C for 20 minutes and then cooled to form a hardened film. The refractive index of the hardened film at a wavelength of 633 nm was measured using an ellipsometer (JA Woollam, VUV-vase) at a measurement temperature of 25°C. The refractive index was evaluated using the following criteria: 5: Refractive index below 1.300; 4: Refractive index above 1.300 but below 1.350; 3: Refractive index above 1.350 but below 1.400; 2: Refractive index above 1.400 but below 1.450; 1: Refractive index above 1.450.

[0282] <Evaluation of Moisture Resistance> For the compositions of Examples 1-9, 12-23, and 26-38, each composition was spin-coated onto a silicon wafer with a diameter of 8 inches (20.32 cm) to achieve a film thickness of 0.4 μm. Then, exposure was performed using an ultra-high pressure mercury lamp under conditions of 20 mW / cm² illuminance and 1000 mJ / cm² exposure. Next, the mixture was heated on a hot plate at 100°C for 20 minutes and cooled to form a hardened film. For the compositions of Examples 10, 11, 24, 25, and Comparative Examples 1 and 2, the compositions were spin-coated onto a silicon wafer with a diameter of 8 inches (20.32 cm) to achieve a film thickness of 0.4 μm. Next, the mixture was heated on a hot plate at 100°C for 20 minutes and cooled to form a hardened film. The hardened film was subjected to a 168-hour moisture resistance test using a highly accelerated life testing apparatus (ESPEC, EHS-212) at 130°C and 85% humidity. The refractive index of the hardened film at 633nm wavelength was measured before and after the moisture resistance test (measurement temperature 25°C) using an ellipsometer (JA Woollam, VUV-vase). The change in refractive index before and after the moisture resistance test was calculated, and the moisture resistance was evaluated using the following criteria: Change in refractive index = |Refractive index of the hardened film before moisture resistance test - Refractive index of the hardened film after moisture resistance test| 5: Change in refractive index less than 0.005 4: Change in refractive index greater than 0.005 but less than 0.010 3: Change in refractive index greater than 0.010 but less than 0.020 2: Change in refractive index greater than 0.020 but less than 0.030 1: Change in refractive index greater than 0.030

[0283] The above evaluation results are recorded in the table below. Furthermore, in the table below, the content of silicon dioxide particles in the total solids composition of the composition is recorded in the column for "Silicon Dioxide Particle Content". Also, the content of acid-generating agents or alkali-generating agents in the total solids composition of the composition is recorded in the column for "Acid-generating Agent or Alkali-generating Agent Content". [Table 10] Performance Evaluation Silicon dioxide particle content (quality%) Content of acid-generating or alkali-generating agents (quality%) Refractive index Moisture resistance Example 1 5 5 93.7 4.2 Example 2 4 4 93.7 4.2 Example 3 5 5 93.7 4.2 Example 4 4 4 93.7 4.2 Example 5 5 4 95.7 2.1 Example 6 4 5 89.9 8.1 Example 7 3 4 86.3 11.8 Example 8 5 5 93.7 4.2 Example 9 5 5 93.7 4.2 Example 10 5 5 93.7 4.2 Example 11 5 5 93.7 4.2 Example 12 3 4 84.6 3.9 Example 13 3 4 84.6 3.9 Example 14 4 4 84.6 3.9 Example 15 3 3 76.7 3.6 Example 16 3 2 69.9 3.3 Example 17 4 5 86.3 3.9 Example 18 4 5 86.3 3.9 Example 19 3 5 79.7 3.7 Example 20 2 3 57.7 11.5 Example 21 1 3 93.7 4.2 Example 22 1 3 93.7 4.2 Example 23 5 5 93.7 4.2 Example 24 5 5 93.7 4.2 Example 25 2 2 44.0 12.0 Example 26 4 5 89.1 5.0 Example 27 4 5 83.9 5.0 Example 28 3 5 74.9 4.8 Example 29 4 5 83.9 10.0 Example 30 3 5 78.7 10.1 Example 31 3 5 69.1 10.0 Example 32 3 5 78.7 10.1 Example 33 3 5 78.7 10.1 Example 34 3 5 78.7 10.1 Example 35 3 5 78.7 10.1 Example 36 3 5 78.7 10.1 Example 37 3 5 78.7 10.1 Example 38 3 5 78.7 10.1 Comparative Example 1 1 1 97.8 0 Comparative Example 2 1 1 39.6 3.0

[0284] As shown in the table above, compared with the comparative examples, all examples were able to form a hardened film that inhibits moisture resistance. For the compositions of Examples 26-38, spin coating was applied to an 8-inch diameter silicon wafer to achieve a film thickness of 0.4 μm. Then, exposure was performed using an I-ray stepper exposure apparatus FPA-3000i5+ (manufactured by Canon Inc.) through a mask with an opening having a 100 μm × 100 μm island pattern. Next, a 60-second spin-dip development was performed at 23°C using a 2.38% by mass aqueous solution of tetramethylammonium hydroxide. Afterwards, rinsing was performed by spin / spraying, followed by further rinsing with pure water. Then, heating was performed on a 100°C hot plate for 15 minutes, followed by cooling, forming a 100 μm × 100 μm island pattern, resulting in a well-formed pattern.

[0285] <Manufacturing of the Color Filter> After the composition of Example 1 was coated onto the surface of an 8-inch (20.32 cm) diameter silicon wafer by spin coating, it was heated at 90°C for 120 seconds using a hot plate (pre-baking). Then, it was irradiated with an I-ray stepper exposure apparatus FPA-3000i5+ (manufactured by Canon Inc.) at an exposure dose of 1000 mJ / cm², and heated at 100°C for 1200 seconds (post-baking) to form a 1.2 μm thick spacer material layer. KrF was coated onto this spacer material layer using a spin coater with a positive photoresist, and heated at 100°C for 2 minutes to achieve a film thickness of 1.0 μm, forming a photoresist layer. Next, the corresponding areas were patterned using a KrF scanner at an exposure dose of 30 mJ / cm², and then heated at 110°C for 1 minute. After development with a developer for 1 minute, a post-baking process was performed at 100°C for 1 minute to remove the photoresist in the areas where the partitions should form. Next, the partition material layer was processed under the following dry etching conditions, forming a grid of 0.6 μm wide partitions with a spacing of 3.6 μm. The width of the partition openings was 3.0 μm. Furthermore, the spacing width of the partitions was the sum of the width of the partition openings and the width of the partitions themselves. -Dry Etching Conditions- Apparatus used: Hitachi High-Technologies Corporation U-621 Pressure: 2.0 Pa Gas used: Ar / C4F6 / O2 = 1000 / 20 / 50 mL / min Processing temperature: 20°C Source power: 500 W Top bias / electrode bias = 500 / 1000 W Processing time: 220 seconds

[0286] Next, a green pixel forming coloring composition was applied to the silicon wafer and the surface of the spacers formed thereon using spin coating, so that the film thickness after film formation was 1.2 μm. Then, the wafer was heated at 90°C for 120 seconds using a heating plate. Next, it was exposed using an I-ray stepper exposure apparatus FPA-3000i5+ (manufactured by Canon Inc.) through a patterned mask at an exposure dose of 200 mJ / cm². Next, it was immersion developed at 23°C for 60 seconds using a 0.3% by mass aqueous solution of tetramethylammonium hydroxide. Afterwards, it was rinsed by spin / spraying and further washed with pure water. Then, it was heated at 100°C for 900 seconds using a heating plate, thereby forming a green colored pattern (green pixel). Similarly, using a red pixel forming coloring composition and a blue pixel forming coloring composition, patterns are formed sequentially to create red colored patterns (red pixels) and blue colored patterns (blue pixels), respectively, thus creating a color filter. The green pixel forming coloring composition uses either green pixel forming coloring composition 1, green pixel forming coloring composition 2, or green pixel forming coloring composition 3 as shown below. The red pixel forming coloring composition uses either red pixel forming coloring composition 1 or red pixel forming coloring composition 2 as shown below. For the blue pixel forming coloring composition, blue pixel forming coloring composition 1 as shown below is used. Following a known method, the obtained color filter is assembled into an organic light-emitting diode (OLED) display device. This OLED display device possesses suitable image recognition capabilities.

[0287] (Coloring composition 1 for green pixel formation) The following components were mixed and stirred, and then filtered through a nylon filter (manufactured by NIHON PALL Corporation) with a pore size of 0.45 μm to prepare coloring composition 1 for green pixel formation. Green pigment dispersion 1 76.80 parts by mass Photopolymerization initiator 1 0.97 parts by mass Photopolymerization initiator 2 0.58 parts by mass Resin solution 1 1.57 parts by mass Polymerizing compound 1 0.97 parts by mass Polymerizing compound 2 0.97 parts by mass Surfactant 1 0.001 parts by mass Cyclohexanone 18.14 parts by mass

[0288] (Coloring composition 2 for green pixel formation) The green pigment dispersion 1 of the coloring composition 1 for green pixel formation was changed to the green pigment dispersion 2, and the coloring composition 2 for green pixel formation was prepared in the same manner as the coloring composition 1 for green pixel formation.

[0289] (Coloring composition 3 for green pixel formation) The green pigment dispersion 1 of the coloring composition 1 for green pixel formation was changed to the green pigment dispersion 3, and the coloring composition 3 for green pixel formation was prepared in the same manner as the coloring composition 1 for green pixel formation.

[0290] (Coloring composition 1 for red pixel formation) The following components were mixed and stirred, and then filtered through a nylon filter (manufactured by NIHON PALL Corporation) with a pore size of 0.45 μm to prepare coloring composition 1 for red pixel formation. Red pigment dispersion 1 60.31 parts by mass Photopolymerization initiator 1 0.83 parts by mass Photopolymerization initiator 2 0.58 parts by mass Resin solution 1 3.26 parts by mass Polymerizable compound 1 0.83 parts by mass Polymerizable compound 2 0.83 parts by mass Surfactant 1 0.004 parts by mass Propylene glycol monomethyl ether 16.68 parts by mass Cyclopentanone 16.68 parts by mass

[0291] (Coloring composition 2 for red pixel formation) The red pigment dispersion 1 of the coloring composition 1 for red pixel formation was changed to the red pigment dispersion 2, and the coloring composition 2 for red pixel formation was prepared in the same manner as the coloring composition 1 for red pixel formation.

[0292] (Coloring composition 1 for blue pixel formation) The following components were mixed and stirred, and then filtered through a nylon filter (manufactured by NIHON PALL Corporation) with a pore size of 0.45 μm to prepare coloring composition 1 for blue pixel formation. Blue pigment dispersion 1 56.7 parts by mass Purple dye solution 1 16.28 parts by mass Photopolymerization initiator 3 1.19 parts by mass Photopolymerization initiator 2 0.64 parts by mass Resin solution 1 0.93 parts by mass Polymerizable compound 3 2.97 parts by mass Epoxy compound 1 1.40 parts by mass Surfactant 1 0.006 parts by mass Cyclohexanone 19.89 parts by mass

[0293] The materials used in the color composition for forming each pixel are as follows.

[0294] Green Pigment Dispersion 1: Green pigment dispersion 1 was prepared by the following method: A pigment dispersion consisting of 7.59 parts by mass of CIPigment Green 36, 4.41 parts by mass of CIPigment Yellow 185, 1.33 parts by mass of pigment derivative 1, 6.77 parts by mass of dispersant 1, and 80.00 parts by mass of propylene glycol monomethyl ether acetate (PGMEA) was mixed and dispersed for 3 hours using a bead mill (zirconia beads with a diameter of 0.3 mm). Subsequently, the dispersion was further performed using a high-pressure disperser NANO-3000-10 (manufactured by Nippon Bee Chemical Co., Ltd.) with a pressure of 2000 kg / cm2 and a flow rate of 500 g / min. This dispersion was repeated 10 times to obtain green pigment dispersion 1. Pigment Derivative 1: A compound with the following structure [Chemical Formula 15] Dispersant 1: A resin with the following structure (the values ​​in parentheses of the main chain indicate the molar ratio of each repeating unit, and the values ​​in parentheses of the side chains indicate the number of repeating units. The weight-average molecular weight is 20,000.) [Chemical Formula 16]

[0295] Green Pigment Dispersion 2: Green pigment dispersion 2 was prepared by the following method: A pigment dispersion was prepared by mixing and dispersing a mixture consisting of 1.31 parts by mass of CIPigment Green 36, 3.03 parts by mass of CIPigment Green 7, 1.24 parts by mass of CIPigment Blue 15:4, 2.32 parts by mass of CIPigment Yellow 185, 0.35 parts by mass of CIPigment Yellow 150, 3.74 parts by mass of CIPigment Yellow 139, 1.33 parts by mass of pigment derivative 1, 6.77 parts by mass of dispersant 1, and 80.00 parts by mass of PGMEA for 3 hours using a bead mill (zirconia beads with a diameter of 0.3 mm). Subsequently, the dispersion was further performed using a NANO-3000-10 high-pressure disperser with a pressure reduction mechanism (manufactured by Nippon Bee Chemical Co., Ltd.) at a pressure of 2000 kg / cm² and a flow rate of 500 g / min. This dispersion process was repeated 10 times to obtain a green pigment dispersion 2.

[0296] Green Pigment Dispersion 3: Green pigment dispersion 3 was prepared by the following method: A pigment dispersion consisting of 5.81 parts by mass of CIPigment Green 36, 1.64 parts by mass of CIPigment Blue 15:4, 1.94 parts by mass of CIPigment Yellow 185, 2.61 parts by mass of CIPigment Yellow 139, 1.33 parts by mass of pigment derivative 1, 6.77 parts by mass of dispersant 1, and 80.00 parts by mass of PGMEA was prepared for 3 hours using a bead mill (zirconia beads with a diameter of 0.3 mm). Subsequently, the dispersion was further performed using a high-pressure disperser NANO-3000-10 (manufactured by Nippon Bee Chemical Co., Ltd.) with a pressure of 2000 kg / cm2 and a flow rate of 500 g / min. This dispersion was repeated 10 times to obtain green pigment dispersion 3.

[0297] Red Pigment Dispersion 1: Red pigment dispersion 1 was prepared by the following method: A pigment dispersion consisting of 10.68 parts by mass of CIPigment Red 254, 2.82 parts by mass of CIPigment Yellow 139, 1.50 parts by mass of pigment derivative 1, 5.25 parts by mass of dispersant 1, and 80.00 parts by mass of PGMEA was mixed and dispersed for 3 hours using a bead mill (zirconia beads with a diameter of 0.3 mm). Subsequently, the dispersion was further performed using a high-pressure disperser NANO-3000-10 (manufactured by Nippon Bee Chemical Co., Ltd.) with a pressure of 2000 kg / cm2 and a flow rate of 500 g / min. This dispersion was repeated 10 times to obtain red pigment dispersion 1.

[0298] Red Pigment Dispersion 2: Red pigment dispersion 2 was prepared by the following method: A pigment dispersion consisting of 10.68 parts by mass of CIPigment Red 264, 2.82 parts by mass of CIPigment Yellow 139, 1.50 parts by mass of pigment derivative 1, 5.25 parts by mass of dispersant 1, and 80.00 parts by mass of PGMEA was mixed and dispersed for 3 hours using a bead mill (zirconia beads with a diameter of 0.3 mm). Subsequently, the dispersion was further performed using a high-pressure disperser NANO-3000-10 (manufactured by Nippon Bee Chemical Co., Ltd.) with a pressure of 2000 kg / cm2 and a flow rate of 500 g / min. This dispersion process was repeated 10 times to obtain red pigment dispersion 2.

[0299] Blue Pigment Dispersion 1: Blue pigment dispersion 1 was prepared by the following method: A pigment dispersion consisting of 10.00 parts by mass of CIPigment Blue 15:6, 3.50 parts by mass of dispersant 2, and 86.50 parts by mass of PGMEA was mixed and dispersed for 3 hours using a bead mill (zirconia beads with a diameter of 0.3 mm). Subsequently, it was further dispersed using a NANO-3000-10 high-pressure disperser with a decompression mechanism at a pressure of 2000 kg / cm2 and a flow rate of 500 g / min. This dispersion process was repeated 10 times to obtain blue pigment dispersion 1. Dispersant 2: A resin with the following structure (the values ​​in parentheses in the main chain indicate the molar ratio of each repeating unit. The weight average molecular weight is 11000.) [Chemical Formula 17]

[0300] Purple dye solution 1: A 20% by mass solution of cyclohexanone containing a dye with the following structure (in the structural formula shown below, iPr represents isopropyl) [Chemical Formula 18]

[0301] Photopolymerization Initiator 1: Irgacure OXE03 (manufactured by BASF) Photopolymerization Initiator 2: Omnirad 2959 (manufactured by IGM Resins BV) Photopolymerization Initiator 3: Compound with the following structure [Chemical Formula 19] Resin Solution 1: 40% by mass PGMEA solution of resin with the following structure (weight average molecular weight 11000, values ​​attached to the main chain are in moles) [Chemical Formula 20] Polymerizable Compound 1: Compound with the following structure [Chemical Formula 21] Polymerizable Compound 2: Compound with the following structure [Chemical Formula 22] Polymerizable Compound 3: Compound with the following structure [Chemical Formula 23] Epoxy Compound 1: EHPE3150 (manufactured by Daicel Corporation) Surfactant 1: KF-6001 (manufactured by Shin-Etsu Chemical Co., Ltd., polysiloxane surfactant) [Simplified Explanation of the Diagram]

[0012] Figure 1 is an enlarged view schematically showing a plurality of spherical silicon dioxide particles connected in a beaded shape. Figure 2 is a side sectional view showing one embodiment of the structure of the present invention. Figure 3 is a top view viewed from directly above the support in the same structure.

Claims

1. A composition comprising: particles having a silanol group; at least one generating agent selected from the group consisting of acid generating agents and base generating agents; and a solvent, wherein the content of the aforementioned particles having a silanol group in the total solids component of the aforementioned composition is 69.1% by mass or more.

2. The composition as claimed in claim 1, wherein the total content of the aforementioned silanol-containing particles and the aforementioned generating agent in the total solids composition of the aforementioned composition is 69.2 to 99% by mass.

3. The composition as described in claim 1 or claim 2, wherein the aforementioned particles having silanol groups are silicon dioxide particles.

4. The composition as described in claim 3, wherein the aforementioned silica particles comprise at least one selected from the group consisting of silica particles in a shape comprising a plurality of spherical silica particles connected in a beaded manner, silica particles in a shape comprising a plurality of spherical silica particles connected in a planar manner, and silica particles with a hollow structure.

5. The composition as described in claim 1 or claim 2, wherein the aforementioned generating agent is an acid generating agent, and the aforementioned acid generating agent includes a photoacid generating agent.

6. The composition as described in claim 5, wherein the content of the aforementioned photoacid generator in the total solids of the aforementioned composition is 1 to 10 by mass.

7. The composition as claimed in claim 5, wherein the aforementioned photoacid generator contains at least one selected from the group consisting of oxime sulfonate compounds and trisulfite compounds.

8. The composition as described in claim 1 or claim 2, wherein the aforementioned generating agent is an alkali generating agent, and the aforementioned alkali generating agent includes a photoalkali generating agent.

9. The composition as claimed in claim 8, wherein the content of the aforementioned photoalkali generating agent in the total solids component of the aforementioned composition is 1 to 10 by mass.

10. The composition as claimed in claim 8, wherein the aforementioned photoalkali generator contains at least one selected from the group consisting of carbamate compounds and acetooxime compounds.

11. The composition as described in claim 1 or claim 2, further comprising a silanol compound with a molecular weight of less than 1000.

12. The composition as described in claim 1 or claim 2 further contains a surfactant.

13. The composition as described in claim 1 or claim 2, further comprising a compound having an alkoxysilicone group.

14. The composition as described in claim 1 or claim 2, wherein the resin content in the total solids component of the aforementioned composition is 30% by mass or less.

15. The composition as described in claim 1 or claim 2, which is a composition for forming a component adjacent to the aforementioned pixel having a filter of a plurality of pixels.

16. The composition as described in claim 1 or claim 2 is a component for forming a partition wall.

17. The composition as described in claim 1 or claim 2, wherein when the composition is coated on a silicon wafer and heated at 100°C for 5 minutes to form a film with a thickness of 0.4 μm, the refractive index of light with a wavelength of 633 nm of the film is 1.4 or less.

18. A hardened film obtained from the composition described in claim 1 or claim 2.

19. A structure having: a support; a partition obtained from the components described in claim 1 or claim 2 disposed on the support; and pixels disposed in the area divided by the partition.

20. A filter having the hardened film described in claim 18.

21. A solid-state imaging element having the hardened film described in claim 18.

22. An image display device having the hardened film described in claim 18.

23. A method for manufacturing a hardened film, comprising: The steps of coating the composition described in claim 1 or claim 2 onto a support to form a composition layer; and the steps of hardening the aforementioned composition layer, wherein a film, i.e. a hardened film, is obtained by passing all steps at a temperature below 150°C after the aforementioned composition layer has been hardened, and the steps of hardening the aforementioned composition layer include the steps of generating acid or alkali from an acid-generating agent or alkali-generating agent contained in the aforementioned composition layer by irradiating or heating the aforementioned composition layer.

Images