Equipment front end modules with induced gas mixing, and methods of use thereof

Abstract

An Equipment Front End Module (EFEM) has walls, a first wall including one or more loading ports, and an EFEM chamber formed between the walls. The EFEM further includes an upper inflation section located at the top of the EFEM and includes an opening into the EFEM chamber. Conduits provide return airflow paths enabling gas recirculation from the EFEM chamber to the upper inflation section, and the conduits are adjacent to the one or more loading ports. The one or more conduits include flow elements configured to cause a low-pressure state at one of the one or more loading ports.

Description

Technical Field

[0001] This disclosure relates to the manufacture of electronic devices, and more specifically to the front-end module (EFEM) of a device having induced gas mixing and its usage. Prior Technology

[0002] In semiconductor electronic device manufacturing, substrate handling is typically performed across multiple process tools, with the substrate traveling between these tools in a substrate carrier, such as an open-front wafer transport cassette (FOUP). The FOUP may dock at the loading port of the Equipment Front-End Module (EFEM) (sometimes called the Factory Interface (FI)), where one or more substrates can be transferred to a loading gate, transport chamber, and / or process chamber. Exposure of the substrate to moisture or oxygen in the early or late stages can cause erosion (e.g., etching), interlayer defects (e.g., thin film stress and resistivity, physical vapor deposition), and device inhomogeneities (e.g., ineffective chemical vapor deposition). Removing moisture and oxygen from the EFEM environment reduces and / or eliminates the challenges of such device performance and yield.

[0003] The EFEM provides a non-reactive environment for transferring substrates between the FOUP and loading gates and / or chambers. This is achieved by practically sealing the internal volume of the EFEM as much as possible and filling it with a gas (such as nitrogen) that is generally non-reactive to the substrate material. This non-reactive gas expels any reactive gas (such as oxygen) from the EFEM and also reduces / removes moisture from the EFEM. One or more loading ports for docking to one or more substrate carriers can be arranged along the front side of the EFEM. Conventional EFEM loading ports are bottom-cleaned with nitrogen gas (N2) to reduce relative humidity (RH) and oxygen levels within the FOUP and EFEM during substrate handling and transfer. The hardware for implementing bottom cleaning and the use of pressurized N2 are expensive and increase the complexity of the EFEM. Improved systems, equipment, and methods are needed to maintain a non-reactive environment within the EFEM and FOUP at a lower cost and with less complexity. Summary of the Invention

[0004] According to at least one embodiment, a device front-end module (EFEM) is disclosed herein, comprising: a plurality of walls, a first wall of the plurality of walls including one or more loading ports; an EFEM chamber formed between the plurality of walls; an upper inflation portion located at a top of the EFEM, the upper inflation portion including an opening into the EFEM chamber; and a plurality of conduits providing a return airflow path enabling recirculation of gas from the EFEM chamber to the upper inflation portion, wherein the plurality of conduits are adjacent to the one or more loading ports, and wherein one or more of the conduits include a plurality of flow elements configured to cause a low-pressure state at a location of the one or more loading ports. In some embodiments, the plurality of flow elements are additionally or alternatively configured to induce airflow from the FOUP to adjacent flow elements, which in turn induces flow from the EFEM into the FOUP.

[0005] According to at least one embodiment, an electronic device manufacturing assembly is further disclosed herein, comprising: a device front-end module (EFEM) including: a plurality of walls, a first wall of the plurality of walls including one or more loading ports; an EFEM chamber formed between the plurality of walls; an upper inflation section located at a top of the EFEM and including an opening into the EFEM chamber; and a plurality of conduits providing a return airflow path enabling gas recirculation from the EFEM chamber to the upper inflation section, wherein the plurality of conduits are adjacent to the one or more loading ports, wherein one or more of the plurality of conduits includes a plurality of flow elements configured to cause a low-pressure state at one of the one or more loading ports; and one or more substrate carriers coupled to the one or more loading ports.

[0006] In at least one further embodiment, a method of operating a device front-end module (EFEM) is disclosed herein, comprising the steps of: providing the EFEM, the EFEM including an upper inflation section in fluid communication with an EFEM chamber, the EFEM chamber being connected to one or more loading ports; flowing gas from the upper inflation section to the EFEM chamber; and recirculating at least a portion of the gas from the EFEM chamber to the upper inflation section via a plurality of conduits positioned near the one or more loading ports, wherein one or more of the plurality of conduits includes a plurality of flow elements configured such that a low-pressure state is present at one of the one or more loading ports. Simple Explanation of the Diagram

[0007] The drawings described below are for illustrative purposes only and are not necessarily drawn to scale. These drawings are not intended to limit the scope of this disclosure in any way.

[0008] Figure 1 illustrates a schematic top view of an electronic device manufacturing assembly according to one or more embodiments of this disclosure.

[0009] Figure 2A illustrates a front cross-sectional view of a schematic device front-end module (EFEM) according to one or more embodiments of this disclosure, the EFEM including a front return pipe.

[0010] Figure 2B illustrates the left elevation view of the EFEM of Figure 2A according to one or more embodiments of this disclosure.

[0011] Figure 2C illustrates a front view of an EFEM according to one or more embodiments of the present disclosure and a storage compartment coupled to one side of the EFEM.

[0012] Figure 2D shows an enlarged perspective view of a pair of flow transition pipes positioned adjacent to a pair of loading ports of an EFEM.

[0013] Figure 3A is a diagram illustrating the theoretical airflow entering the FOUP through the EFEM flow transition pipe.

[0014] Figure 3B is a diagram illustrating the theoretical airflow entering the FOUP through the EFEM flow transition pipe.

[0015] Figure 4 illustrates a flowchart of a method for operating EFEM according to one or more embodiments of this disclosure. Implementation

[0016] Reference will now be made to exemplary embodiments of this disclosure, which are illustrated in the accompanying drawings. Where feasible, the same reference numerals will be used throughout the drawings in all views to refer to the same or similar parts. Features of the various embodiments described herein may be combined with each other unless specifically indicated to the contrary.

[0017] According to one or more embodiments of this disclosure, the electronic device manufacturing systems and related methods described herein provide improved substrate handling. For example, the systems and methods provide efficiency and handling improvements in substrate manufacturing by controlling the environmental exposure of the substrate, and particularly by controlling the state within one or more open-front wafer transfer cassettes (FOUPs) coupled to a device front-end module (EFEM). At least one storage container may be housed within the FOUP, and the storage container may include a plurality of substrate holders (e.g., shelves) configured to receive and support substrates thereon (e.g., during idle periods before and / or after substrate processing). The systems and methods described herein may further provide EFEMs that reduce i) operating costs; ii) manufacturing costs; and iii) complexity. In one or more embodiments, these EFEMs do not require gas cleaning equipment for cleaning the loading ports with N2 or clean dry air (CDA) and can provide a non-reactive environment without cleaning the loading ports.

[0018] According to at least one embodiment, the EFEM includes one or more conduits (also referred to herein as flow transition conduits) positioned adjacent to the loading port. These conduits include a plurality of flow elements (e.g., holes) that create a low-pressure environment at a location on the loading port (e.g., in front of the FOUP) and induce airflow and gas mixing between an environment (e.g., gas in the FOUP) and an environment (e.g., gas in the EFEM). The conduits may apply suction to draw gas / air upwards from the EFEM through the conduits. The plurality of flow elements may also cause gas / air from the FOUP to flow upwards through the conduits, causing gas / air from the EFEM to displace and / or mix with gas / air from the FOUP. In one embodiment, the plurality of flow elements create disturbances (e.g., Bernoulli effect) in the airflow through the conduits of the EFEM, further increasing the mixing of gas / air in the EFEM with gas / air in the FOUP.

[0019] Before docking the FOUP and / or opening the loading port, inert, low-humidity gas is recirculated through the EFEM and its flow-changing conduits. This inert gas can be recirculated through these conduits and flow from the bottom to the top, across the loading ports. Air flowing across the loading port doors and through these conduits can be considered return air. This inert gas can be N₂ or extremely clean dry air (xCDA) (e.g., CDA with a moisture content of less than approximately 0.33 ppm by weight). When the loading ports are opened and the interior of the EFEM is connected to the interior of the FOUP, the gas present in the FOUP is drawn into the recirculation conduits and replaced by the low-humidity gas recirculated in the EFEM. This gas mixing is responsible for rapidly reducing the humidity level in the FOUP. Suitable flow elements (also referred to herein as flow-changing elements) include (but are not limited to) one or more openings (e.g., orifices, holes, or perforations). Flow elements such as turf, protrusions, fins, fan blades, roughness elements, increased surface roughness, and / or any other element that can induce turbulence, and any combination of two or more of the foregoing, may also be used in addition to or in place of the one or more openings.

[0020] In the embodiments, the flow elements include one or more openings in the conduits. These openings can be holes, perforations, grilles, etc. The openings can have various shapes, including circular, rectangular, square, polygonal, etc. In some embodiments, the flow elements have a diameter of about 1 mm to about 1 cm and are arranged in rows and columns, for example, each row has about 2 to about 5 openings arranged in about 1 to about 5 columns. At least one of the conduits may include a first set of openings on one side near a first loading port and a second set of openings on the opposite side near a second loading port. The disturbance created by the flow elements induces mixing within and between the gases in the FOUP and EFEM. This induced gas mixing, combined with the low humidity environment within the EFEM, promotes a rapid reduction in relative humidity (RH) and oxygen content within the FOUP. In some embodiments, flow elements with irregular patterns (e.g., holes with irregular patterns) are used. For example, the spacing between holes may vary, the holes may have different sizes, etc. In one embodiment, the conduits include holes of a certain hole pattern, wherein the hole pattern has a larger number of holes and / or larger holes near the bottom of the FOUP, and a smaller number of holes and / or smaller holes near the top of the FOUP. In another embodiment, the hole pattern of the holes included in the conduits has a smaller number of holes and / or smaller holes near the bottom of the FOUP, and a larger number of holes and / or larger holes near the top of the FOUP. In another embodiment, the size and / or number of holes gradually change from the bottom to the top of the FOUP. This can create a gradient in the size and / or number of holes with the height of the conduit. In some embodiments, the first conduit may have a first hole pattern and the second conduit may have a second hole pattern different from the first hole pattern.

[0021] The ducted EFEM according to one or more embodiments herein can reduce relative humidity in the FOUP more quickly, achieving a lower stable RH and oxygen level than conventional EFEMs with nitrogen purging loading ports. The EFEM described herein, which incorporates perforated recirculation piping for recirculating xCDA, can rapidly create an inert environment in the FOUP upon connection to the EFEM, without the need for a nitrogen purging loading port including nitrogen supply and exhaust nozzles and corresponding actuators, mass flow controllers, piping, etc. Thus, the EFEM according to the embodiments provides improved performance, lower cost, and increased reliability compared to conventional EFEMs. The ducted EFEM described herein achieves an improvement of approximately 20% to approximately 80% in speed at which the atmosphere in the FOUP reaches appropriate humidity, oxygen, and / or other parameter levels compared to conventional nitrogen purging systems.

[0022] Further details of exemplary embodiments of EFEM, substrate carrier, electronic device manufacturing assembly including EFEM and substrate carrier, and methods of operating EFEM will be described herein with reference to Figures 1-4.

[0023] Figure 1 illustrates a schematic diagram of an exemplary embodiment of an electronic device manufacturing assembly 100 according to one or more embodiments of this disclosure. The electronic device manufacturing assembly 100 may include a main housing 101 having a plurality of housing walls defining a transfer chamber 102. A transfer robot 103 (illustrated as a circle in dashed lines) may be at least partially housed within the transfer chamber 102. The transfer robot 103 may be configured to move substrates between different destinations via the operation of its arm (not shown). As used herein, "substrate" may refer to an object used to manufacture electronic devices or circuit components, such as semiconductor wafers, silicon-containing wafers, shaped wafers, glass plates, and the like.

[0024] The movement of the various arm components of the transfer robot 103 can be controlled by appropriate commands issued by a controller 106 to a drive assembly (not shown), which includes a plurality of drive motors of the transfer robot 103. Signals from the controller 106 can cause the movement of the various components of the transfer robot 103. Appropriate feedback mechanisms can be provided for one or more of these components by various sensors (such as position encoders and the like).

[0025] The illustrated transfer chamber 102 is square, but it can be rectangular, hexagonal, octagonal, or other polygonal, and may include a first wall 102A, a second wall 102B, a third wall 102C, and a fourth wall 102D. In the illustrated embodiment, the transfer robot 103 can simultaneously transfer and / or retract dual substrates. The first wall 102A, second wall 102B, third wall 102C, and fourth wall 102D may be planar, and the entrance channels into the multiple sets of process chambers may be positioned along their respective walls. However, other suitable shapes of the main housing 101, the number of walls and process chambers, and the type of robot are possible.

[0026] The destination for the transfer robot 103 can be any or more of process chambers 108A-108F, which can be configured and operable to perform a process on a substrate transferred to the process chamber. The process can be any suitable process, such as plasma vapor deposition (PVD) or chemical vapor deposition (CVD), etching, annealing, pre-cleaning, removal of metal or metal oxides, and the like. Other processes can be performed on the substrate therein.

[0027] A substrate can be received from an EFEM 114 into a transfer chamber 102, and the substrate can exit the transfer chamber 102 into the EFEM 114 via a loading gate device 112 coupled to a rear wall 114R of the EFEM 114. The loading gate device 112 may include one or more loading gate chambers (e.g., loading gate chambers 112A and 112B). Loading gate chambers 112A and 112B may be single-wafer loading gate (SWLL) chambers, multi-wafer chambers, or combinations thereof. Other numbers of loading gates may be included.

[0028] EFEM 114 may be an outer shell having various shell walls, such as (for example) a front wall 114F, a rear wall 114R, side walls 114S1, 114S2, a top 114T (Figure 2A), and a bottom 114B, forming an EFEM chamber 114C. Each of the front wall 114F, rear wall 114R, and side walls 114S1, 114S2 may have one or more interface openings to facilitate substrate exchange and / or coupling to other components. One or more loading ports 115 may be provided on the front wall 115F of EFEM 114, as shown in Figure 1. The one or more loading ports 115 may each be configured to receive and dock with a corresponding one or more substrate carriers 116 (e.g., FOUP). Although four loading ports 115 and four substrate carriers 116 are illustrated, other embodiments may have more or fewer loading ports 115 suitable for a corresponding number of substrate carriers 116 at the EFEM 114.

[0029] EFEM 114 may include a suitable loading / unloading robot 117 (shown as dashed lines) having a conventional structure within its respective EFEM chamber 114C. Once a carrier door of substrate carrier 116 is opened via a carrier door opener 119 for each of the loading ports 115, loading / unloading robot 117 may be configured and operable to remove substrates from substrate carrier 116 and feed such substrates through EFEM chamber 114C into one or more loading gate chambers 112A and 112B of loading gate device 112.

[0030] The side storage compartment 120 may be coupled to a side wall 114S1 of the EFEM 114. In particular, the loading / unloading robot 117 may be further configured to remove substrates from the side storage compartment 120 and load substrates into the side storage compartment 120 before and / or after processing in one or more of the process chambers 108A-108F. In some embodiments, the loading / unloading robot 117 is a high-Z robot configured to retrieve substrates stacked to a height of 26 or even 52 or more in the side storage compartment 120.

[0031] In the illustrated embodiment, an environmental controller may be provided for the EFEM chamber 114C, providing an environmentally controlled atmosphere therein. Specifically, an environmental control device 118 may be coupled to the EFEM 114 and operable to monitor and / or control the environmental conditions within the EFEM chamber 114C. In some embodiments, and at specific times, the EFEM chamber 114C may receive a purge gas (e.g., an inert and / or non-reactive gas), such as argon (Ar), nitrogen (N₂), helium (He), or a clean dry gas, from a purge gas supply 118A. The purge gas supply 118A may be coupled to the EFEM chamber 114C via suitable piping and one or more valves. The environmental conditions within the EFEM chamber 114C may be within the side storage container 124, which is located within and is part of the side storage compartment 120. The side storage container 124 receives vertically stacked substrates therein. In some embodiments, the side storage compartment 120 may have a substrate holder located therein to receive and support the substrate.

[0032] More specifically, the environmental control system 118 can control at least one of the following within the EFEM chamber 114C: 1) relative humidity (RH), 2) temperature (T), 3) the amount of oxygen (O2), and / or 4) the amount of purge gas. Other environmental conditions of the EFEM 114 can be monitored and / or controlled, such as the airflow rate entering the EFEM chamber 114C, or the pressure within the EFEM chamber 114C, or both.

[0033] In some embodiments, the environmental control system 118 includes a controller 106. The controller 106 may include suitable processors, memory, and electronic components for receiving input from various sensors and for controlling one or more valves to control the environmental conditions within the EFEM chamber 114C. In one or more embodiments, the environmental control system 118 may monitor relative humidity (RH) by sensing the relative humidity (RH) in the EFEM 114 with a sensor 130. Any suitable type of sensor for measuring relative humidity, such as a capacitive sensor, can be used. RH can be reduced by flowing an appropriate amount of purge gas from the purge gas supply 118A of the environmental control system 118 into the EFEM chamber 114C. In some embodiments, a compressed volumetric inert gas having a low H₂O level (e.g., purity ≥ 99.9995%, H₂O ≤ 5 ppm) may be used as the purge gas supply 118A in the environmental control system 118 (for example). Other suitablely low H₂O levels may be used.

[0034] In another embodiment, sensor 130 can measure a plurality of environmental conditions. For example, in some embodiments, sensor 130 can measure relative humidity values ​​as discussed above. In one or more embodiments, a predefined reference relative humidity value may be less than 1000 ppm, less than 500 ppm, or at least 100 ppm, depending on the permissible humidity level for a particular process being performed in the electronic device manufacturing assembly 100 or for a particular substrate exposed to the environment of EFEM 114.

[0035] Environmental monitor 130 can also measure the oxygen (O2) level within EFEM 114. In some embodiments, a control signal may be generated from controller 106 to environmental control device 118 to control the oxygen (O2) level below a critical O2 value, the control signal initiating the flow of an appropriate amount of purge gas from purge gas supply 118A into EFEM chamber 114C. In one or more embodiments, the critical O2 value may be less than 50 ppm, less than 10 ppm, or at least 5 ppm, depending on the permissible (without affecting quality) O2 level for a particular process being performed in electronic device manufacturing assembly 100 or for a particular substrate exposed to the environment of EFEM 114. In some embodiments, sensor 130 may sense the oxygen level in EFEM chamber 114C to ensure it is above a safe critical level to allow entry into EFEM chamber 114C.

[0036] Sensor 130 can further measure the absolute or relative pressure within EFEM 114. In some embodiments, controller 106 can control the amount of cleaning gas flowing from cleaning gas supply 118A into EFEM chamber 114C to control the pressure within EFEM chamber 114C.

[0037] In the embodiments shown herein, controller 106 may include a processor, memory, and peripheral components configured to receive control inputs (e.g., relative humidity and / or oxygen) from sensor 130 and execute closed loops or other suitable control schemes. In one embodiment, the control scheme may vary the flow rate of the cleaning gas being introduced into EFEM 114 to achieve a predetermined environmental state. In another embodiment, the control scheme may determine when to transfer the substrate into EFEM 114 or when to open the door of substrate carrier 116.

[0038] The side storage compartment 120 attached to EFEM 114 can store substrates under specific environmental conditions. For example, the side storage compartment 120 can store substrates in the same environmental conditions as those present in EFEM chamber 114C, except that the airflow rate in the side storage compartment 120 can be different (e.g., significantly higher). The side storage compartment 120 can be fluidly coupled to EFEM chamber 114C and can receive gases (e.g., purge gases) from EFEM chamber 114C. The side storage compartment 120 may include an exhaust line 132 for discharging gases from the side storage compartment 120, which further enables the substrates stored in the side storage compartment 120 to be continuously exposed to the desired environmental conditions and purge gas flow rate.

[0039] In some embodiments, the side storage compartment 120 may receive one or more vertically aligned side storage containers 124. For example, a first side storage container 124 may be received in the side storage compartment 120. The first side storage container 124 may include an opening 126 facing the EFEM chamber 114C. The first side storage container 124 may also include an exhaust space 128 located relative to the opening 126. The exhaust space 128 may be coupled to an exhaust line 132, which may be coupled between the exhaust space 128 and the exterior of the side storage compartment 120.

[0040] The first exhaust line 132 may consist of an internal portion and a first external portion 132A. A second line may be coupled between a second side storage container and may include a second external portion 134B. Both the first external portion 134A and the second external portion 134B may be located within a shroud 136. In some embodiments, the shroud 136 (rather than the first external portion 134A and the second external portion 134B) may function as a line to exhaust exhaust gases from the side storage containers 124 and 224. In other embodiments, the first external portion 134A and the second external portion 134B may extend through the interior of the side storage compartment 120.

[0041] Figures 2A-2D illustrate simplified front cross-section, side view, and perspective view of EFEM 114 according to an embodiment, which includes a side storage compartment 120 coupled to a first sidewall 114S1 of EFEM 114. The side storage compartment 120 may include a first chamber 230 and a second chamber 233, the first chamber 230 receiving a first side storage container 124, and the second chamber 233 receiving a second side storage container 224. The second side storage container 224 may include an opening 226 facing the EFEM chamber 114C. The second side storage container 224 may also include a second vent space 228 located at the opposite opening 226. The second vent space 228 may be coupled to a second vent line 234, which may be coupled between the vent space 228 and a common inflation section 236.

[0042] Both the first external portion 134A and the second external portion 134B can be coupled to a common inflation section 236, which receives exhaust gas from the first inflation section 128 of the first side storage container 124 and the second inflation section 228 of the second side storage container 224. In some embodiments, the side storage compartment 120 is removably attached to the first sidewall 114S1 of the EFEM 114. Cleaning gas can be drawn from the common inflation section 236 by a series of fans located in or adjacent to the upper inflation section 237. A conduit 260a (e.g., a flow conversion conduit) is coupled to a channel 142 extending from the common inflation section 236 to guide the exhaust gas to the upper inflation section 237.

[0043] An optional filter 248 may be provided in the exhaust airflow path exiting the common inflation section 236. For example, the filter 248 may be located at the inlet in the inlet channel 142, such that all gas drawn by the fan (not shown) passes through the filter 248. In some embodiments, the filter 248 may be a chemical filter that filters one or more gases exhausted from one or more substrates 235 stored in the side storage compartment 120 after application of the manufacturing process. In some embodiments, the filter 248 may operate to filter undesirable chemical substances, such as chlorine, bromine, and / or fluorine. In some embodiments, the filter 248 may filter alkaline gases (such as ammonia (NH3)) at least 5.0 ppb. In some embodiments, the filter 248 may filter acidic gases, such as fluorine (F), chlorine (Cl), bromine (Br), acetic acid (OAc), nitrogen dioxide (NO2), nitrate (NO3), phosphate (PO4), hydrogen fluoride (HF), and / or hydrochloric acid (HCl), to less than or equal to 1.0 ppb. In some embodiments, filter 248 may comprise an activated carbon filter. In other embodiments, filter 248 may be a particulate filter or include a combination particulate / chemical filter.

[0044] Optionally, a heater 250 may be provided along the exhaust airflow path generated by the fan. The heater 250 can heat the exhaust gas to a predetermined temperature before the exhaust gas is recirculated to the upper inflation section 237. In some embodiments, the heat generated by the heater 250 may be used as a reactant and / or to change the relative humidity in the EFEM 114 and / or the side storage compartment 120. In some embodiments, the heater 250 may heat the purge gas in the EFEM chamber 114C to increase the rate of exhaust from the substrate 235 located in the side storage compartment 120.

[0045] The fans thus draw gas (e.g., filtered gas) into the upper inflation section 237 via the flow conversion duct 260a, where the filtered gas is recirculated back into the EFEM chamber 114C. Furthermore, the fans also draw gas from the EFEM chamber 114C to the upper inflation section 237 via the returning flow conversion ducts 260b-260e, as shown in Figures 1 and 2A-2D (loading / unloading robots are not shown for clarity). The inflation section 154 has an opening adjacent to the side wall of the EFEM 114, and the side storage compartment 120 is coupled to the EFEM 114. The common inflation section 236 is configured to be coupled to the channel 142, which is coupled to the flow conversion duct.

[0046] An access door 156 is coupled to the second sidewall 114S2 of EFEM 114. However, in some embodiments, the second side storage compartment 120a may be attached to the second sidewall 114S2 of EFEM 114 instead of the access door 156. In some embodiments, the second side storage compartment 120a may be attached to the second sidewall 114S2 of EFEM 114 in the same manner as the side storage compartment 120 is attached to the first sidewall 114S1 of EFEM 114, including similar or identical coupling to the common inflation section 236. In this embodiment, exhaust from the second side storage compartment 120a is returned to the upper inflation section 237 via a flow transition conduit 260e. The processed substrates within the side storage compartments 120 and containers 124, 224 can benefit from the high-speed airflow therein, increasing the exhaust rate for etching byproducts such as Br, F, and Cl. Although not shown, the gas inlets to the respective side storage containers 124, 224 may include flow conversion elements that increase the velocity and / or turbulence of the incoming gas.

[0047] Referring now to Figures 2A-2D, each of the plurality of flow transition conduits 260b-260e (Figure 2A) and 260b-260d (Figure 2B) has a separate first (lower) end coupled to the EFEM chamber 114C. Each of the plurality of flow transition conduits 260b-260e (Figure 2A) and 260b-260d (Figure 2B) may extend upward along the front wall 114F of the EFEM 114 on the inner side of the EFEM chamber 114C, and may be parallel to each other (although not necessarily). Each of the plurality of flow transition conduits also has a separate second (upper) end coupled to the upper inflation section 237. The upper inflation section 237 may extend horizontally across the top of the EFEM 114. The upper inflation section 237 may have one or more air inlets 240 entering the EFEM chamber 114C. These inlets may include, be below, or comprise a particulate filter 267 and optionally a chemical filter 268. Furthermore, a perforated homogenizing plate 141 may be provided near one or more inlets 240 to induce substantially laminar flow into and through the EFEM chamber 114C. Note that other embodiments may have more or fewer than the five flow transition conduits 260a-260e shown in the figure.

[0048] As shown in Figures 2A-2D, flow transition conduits 260a-260e can travel along the inside of the front wall 114F of the EFEM, and partially enter between loading ports 115 (the location of loading ports 115 is shown in silhouette in Figure 2A). Figure 2C illustrates a simplified front view of the EFEM 114 and a simplified side view of an embodiment of the side storage compartment 120. As shown, each of the plurality of flow transition conduits 260a-260e is configured to extend upward along a first vertical side of a carrier door opener 119 for a loading port 115 (or substrate carrier 116), while another of the plurality of flow transition conduits 260a-260e is configured to extend upward along a second vertical side of a carrier door opener 119 (or substrate carrier 116). In some embodiments, at least one of the plurality of flow transition conduits 260a-260e is configured to extend upward between the vertical sides of two adjacent carrier door openers 119 (or substrate carrier 116). In some embodiments, the flow conversion conduits 260a-260e may have a transverse cross-sectional area of ​​100 mm² to 300 mm² or greater and may be made from bent sheet metal or plastic.

[0049] As shown in Figures 2A-2D, EFEM flow transition conduits 260a-260e are positioned adjacent to the EFEM loading port 115. Each flow transition conduit 260a-260e may include a plurality of flow transition elements 261. Suitable flow elements 261 include (but are not limited to) one or more openings (e.g., orifices, holes, or perforations), turf, protrusions, fins, blades, roughness elements, increased surface roughness, any other element capable of inducing turbulence, and any two or more combinations thereof. In some embodiments, such flow transition elements include one or more through holes. In some embodiments, such flow transition elements are arranged in rows and columns with a diameter of about 1 mm to about 1 cm, for example, rows of about 2 to about 5 openings are arranged in about 1 to about 5 columns. The flow transition elements 261 shown in Figures 2A-2D are circular holes formed in the sidewalls of the flow transition conduits 260a-260d. Flow conversion element 261 may be formed in rows and columns, as shown in Figure 2D. Flow conversion element 261 may begin at or above loading port 115 and continue downward along the side of loading port 261 to the bottom or below the bottom of loading port 261. Flow conversion channels 260a-260e may include a first set of openings 261 on one side adjacent to a first loading port 115 and a second set of openings 261 on the opposite side adjacent to a second loading port 115. In some embodiments, each set of openings 261 may be positioned along the height of a corresponding loading port 115; alternatively or additionally, each set of openings 261 may be positioned along the flow conversion channels 260a-260e above and / or below a corresponding loading port 115.

[0050] When one or more substrate carriers 116 are docked to one or more loading ports 115, and at least one loading port 115 is open, the environment within one or more substrate carriers 116 is connected to the environment within the EFEM 114. The difference between the environment within the EFEM return duct (e.g., lower pressure and relative humidity of approximately 5 ppmV to approximately 100 ppmV and oxygen concentration of approximately 10 ppmV to approximately 21% by volume) and the environment within the substrate carriers 116 (e.g., higher pressure and relative humidity of approximately 5% to approximately 40% by volume and oxygen concentration of approximately 18% to approximately 21% by volume) causes gas to flow from the EFEM into the FOUP. The flow conversion element 261 causes gas from the EFEM to be drawn into the return duct and induces a low-pressure area at or near the FOUP (e.g., ahead). In some embodiments, the flow conversion element may also induce turbulence in the airflow from the EFEM to the FOUP. The low-pressure state and (optionally) disturbance at the FOUP create a mixture between the gas inside the EFEM and the gas inside the FOUP, rapidly reducing the relative humidity and oxygen content in the FOUP environment.

[0051] Figures 3A and 3B are diagrams illustrating the theoretical airflow entering the FOUP 316 through the EFEM flow transition duct 360. Figure 3B is a side view (or a cross-section of Figure 3A). Each flow transition duct 360 according to the embodiments herein includes one or more sets of a plurality of openings 310. Airflow is represented by arrow 302. During operation, gas flows from a conduit at the bottom of the flow transition duct 360 upwards toward a fan system (not shown). A fan in the fan system propels the gas through one or more filters (not shown) downwards toward the conduit at the bottom of the flow transition duct 360 to create a gas recirculation loop. After passing through these filters, the gas flows through the internal compartments of the EFEM, as indicated by downward arrow 302. When the loading port 315 between the EFEM 314 and the FOUP 316 is open, gas flows through the plurality of openings 310 of the flow transition duct 360, creating low pressure and / or turbulence in front of the FOUP 316 and mixing with the gas within the FOUP.

[0052] As shown in Figures 3A and 3B, gas flows through flow transition conduit 360, optionally at a velocity of less than 1.1 m / s. The gas flow through a plurality of openings 310 passes through the interface shown between the EFEM flow transition conduit 360 and the loading port 315. These openings induce a low-pressure environment at the loading port and / or FOUP and optionally induce gas turbulence, which can cause the Bernoulli effect. In an embodiment, gas from EFEM 314 flows through the plurality of openings 310 to FOUP 316 at velocities of approximately 3.4 m / s to approximately 6.8 m / s, or approximately 4.5 m / s to approximately 5.7 m / s, or approximately 3.8 m / s to approximately 6.3 m / s. On any side of the plurality of openings 310, the gas velocity is less than approximately 4.5 m / s, less than approximately 4.2 m / s, less than approximately 4.0 m / s, less than approximately 3.8 m / s, or less than approximately 3.4 m / s. Within the FOUP, the high gas velocity through the openings 310 mixes at a rate of less than approximately 2.3 m / s or less than approximately 1.1 m / s. As shown in Figures 3A and 3B, the fluid conversion conduit 360 induces mixing of the EFEM gas and the FOUP gas, such that the atmosphere within the FOUP can reach the target inert gas level in less than approximately 1 minute. This can be achieved without requiring individual N2 or xCDA purging of the loading port.

[0053] Figure 4 illustrates a method 400 of operating in one of the electronic device manufacturing assemblies (EFEMs) according to one or more embodiments. In process block 402, method 400 may include providing a device front-end module having an upper inflation portion connected to a device front-end module chamber, the device front-end module chamber being interposed to a plurality of loading ports.

[0054] In process block 404, method 400 may include flowing gas from the upper inflation section to the EFEM chamber. For example, referring to Figures 2A-2D, gas may flow from the upper inflation section 237 to the inside of the EFEM chamber 114C. A portion of the gas flow enters the side storage compartment 120, which is coupled to the side wall of the EFEM 114 at the EFEM 114. One or more loading ports 115 may be closed.

[0055] In process block 406, method 400 may include recirculating at least a portion of the gas from the EFEM chamber 114C to the upper inflation section 237 via one or more flow transition conduits 260a-260e positioned between loading ports 115. For example, each of the flow transition conduits 260a-260e may extend vertically upward along the inner front wall 114F of the EFEM 114 into the upper inflation section 237 of the EFEM, and then downward back into the EFEM chamber 114C. For example, referring to Figures 2A-2D, gas from the upper inflation section 237 may flow through the homogenizing plate 141 and one or more filters into the EFEM chamber 114C. The filtered gas can flow from the EFEM chamber 114C and the common inflation section 236, enter the upper inflation section 237 through a plurality of flow transition pipes 260a~260e along the front wall 114F, and then return to the EFEM chamber 114C.

[0056] During operation, a portion of the gas supplied from the cleaning gas supply 118A to the upper inflation section 237 can be removed through a bottom valve 172. In some embodiments, a fresh stream of cleaning gas can be supplied into the EFEM 114 at a relatively slow, constant rate, similar to the gas stream discharged through the bottom valve 172. For example, the cleaning gas can be exchanged from the EFEM 114 at a rate where the entire gas volume present in the EFEM 114 is exchanged only every few hours or less (for example). Other exchange rates can be used.

[0057] At block 408, one or more substrate carriers 116 may be docked to one or more loading ports 115. Once fully docked and sealed, one or more loading ports 115 corresponding to one or more substrate carriers 116 are opened to connect the atmosphere within the EFEM chamber 114C with the atmosphere within the corresponding substrate carrier 116. When a loading port 115 is opened, gas recirculated through flow conversion channels 260a-260e begins to flow through, pass over, or flow over the flow conversion elements 261 of the flow conversion channels 260a-260e adjacent to the loading port 115. The flow conversion elements 261 cause the airflow from the substrate carriers to pass through the flow conversion elements 261 for recirculation and create a low-pressure region in front of the substrate carrier 116. The flow conversion elements may also optionally cause turbulence in the gas as it flows into the substrate carrier 116. This low-pressure area and / or disturbance induces the mixing of gases in the two atmospheres, rapidly reducing the humidity and oxygen content within the substrate carrier 116 without the need to separately clean the loading port 115.

[0058] Some advantages of the EFEM 114 with flow changeover conduits include creating a low-pressure area at the FOUP, optionally causing turbulence in the air flowing from the EFEM to the FOUP 116, and inducing gas mixing between the EFEM and the FOUP 116, providing a low-humidity environment within the EFEM (e.g., recirculating xCDA within the EFEM) and rapidly reducing the relative humidity (RH) and oxygen content within the FOUP. Furthermore, induction of gas mixing between the EFEM and the FOUP 116 can be achieved without utilizing nitrogen purging of the loading port 115. In one or more embodiments, the system described herein includes one or more flow changeover conduits 260a-260e and no nitrogen purging equipment (e.g., nozzles, pressurized nitrogen supply, piping, mass flow controller, etc.). The EFEM 114 with flow changeover conduits according to the embodiments herein is approximately 20% to approximately 80% faster in purging and emptying the FOUP than conventional EFEM systems.

[0059] Throughout this specification, references to "one embodiment," "specific embodiment," "one or more embodiments," or "an embodiment" indicate that a particular feature, structure, material, or characteristic described in the embodiment is included in at least one embodiment of the invention. Therefore, phrases such as "in one or more embodiments," "specific embodiment," "in one embodiment," or "an embodiment" appearing in different parts of the specification do not necessarily refer to the same embodiment of the invention. Furthermore, specific features, structures, materials, or characteristics may be combined in any suitable manner in one or more embodiments.

[0060] As used herein, the singular forms “a,” “an,” and “the” include plural references unless explicitly stated otherwise in the context. Thus, for example, reference to “a robotic arm” includes both a single robotic arm and more than one robotic arm.

[0061] As used herein, the term "approximately" when referring to a measured quantity means, as would be expected by those skilled in the art, the normal range of variation of the measured quantity when the measurement is performed with a degree of care commensurate with the purpose of the measurement and the accuracy of the measuring equipment. In some embodiments, the term "approximately" includes the number ±10%, such that "approximately 10" would include numbers from 9 to 11.

[0062] The term "at least approximately" when referring to a measured quantity means, as those skilled in the art would expect, the normal range of variation of the measured quantity under conditions of care commensurate with the purpose of the measurement and the accuracy of the measuring equipment, as well as any quantity higher than that. In some embodiments, the term "at least approximately" includes the number minus 10% and any quantity higher than that number, such that "at least approximately 10" will include 9 and any number greater than 9. This term can also be expressed as "approximately 10 or more". Similarly, the term "less than approximately" commonly includes the number minus 10% and any lower quantity, such that "less than approximately 10" will include 11 and any number less than 11. This term can also be expressed as "approximately 10 or less".

[0063] Unless otherwise stated, all parts and percentages are by weight. Unless otherwise stated, weight percentages (wt. %) are based on the whole composition without any volatiles, in other words, on the dry solid contents.

[0064] The foregoing description discloses exemplary embodiments of this disclosure. Modifications to the assemblies, apparatus, and methods disclosed above will be readily apparent to those skilled in the art and fall within the scope of this disclosure. Accordingly, although this disclosure is presented with reference to exemplary embodiments, it should be understood that other embodiments may fall within the scope of this disclosure, as defined in the following claims.

[0065] 100: Electronic device manufacturing assembly 101: Main unit casing 102: Transport Chamber 102A: First Wall 102B: Second Wall 102C: Third Wall 102D: Fourth Wall 103: Teleportation Robot 108A, 108B, 108C, 108D, 108E, 108F: Process chambers 112: Loading gate equipment 112A, 112B: Loading gate chamber 114:EFEM 114B: Bottom 114C: EFEM chamber 114F: Anterior wall 114R: Rear wall 114S1, 114S2: Sidewall 114T: Top 115: Loading Port 116: Substrate carrier 117: Loading / Unloading Robot 118: Environmental control equipment 118A: Cleaning Gas Supply 119: Carrier door opener 120: Side storage compartment 120a: Second side storage compartment 124: (First) Side storage container 126: Opening 128: First inflation section 132: (First) Exhaust pipe 132A: First external part 134B: Second outer part 136: Cover 141: Homogeneous board 142: Channel 154: Inflatable section 156: Entering and exiting 172: Bottom Valve 224: (Second) Side storage container 226: Opening 228: Second inflation section 230: (First) Chamber 233: (Second) Chamber 234: (Second) Exhaust pipe 235:Substrate 236: Common inflation section 237: Upper inflation section 240: Air Inlet 248: Filter 250: Heater 260a, 260b, 260c, 260d, 260e: Flow transition pipes 261: Flow conversion element 267: Particulate Filter 268: Chemical Filter 302: Arrow 310: Opening 314:EFEM 315: Loading Port 316:FOUP 360: Flow Transformation Pipeline 400: Method 402, 404, 406, 408: Squares

[0066] Domestic storage information (please note in order of storage institution, date, and number) none Overseas storage information (please note in the order of storage country, institution, date, and number) none

Claims

1. A device front-end module (EFEM) comprising: a plurality of walls, a first wall of the plurality of walls including one or more loading ports; an EFEM chamber formed between the plurality of walls; an upper inflation section located at a top of the EFEM and including an opening into the EFEM chamber; and a plurality of conduits providing a return airflow path enabling gas recirculation from the EFEM chamber to the upper inflation section, wherein the plurality of conduits extend along the first wall, and wherein one or more of the plurality of conduits includes a plurality of flow elements positioned at a height adjacent to the one or more loading ports along a height of the one or more loading ports and configured such that a low-pressure state is present at the location of the one or more loading ports.

2. The device front-end module of claim 1, wherein the one or more pipes extend vertically along the first wall.

3. The device front-end module of claim 2, wherein at least one of the plurality of pipes is configured to extend between two adjacent loading ports.

4. The device front-end module of claim 1, wherein the one or more loading ports are configured to receive one or more substrate carriers, and wherein the plurality of flow elements are configured to cause the low-pressure state to facilitate the interaction and mixing of a first environment of the one or more substrate carriers with a second environment of the EFEM.

5. The device front-end module of claim 4, wherein an internal cavity of one or more substrate carriers is open to the EFEM cavity, and the one or more substrate carriers are coupled to the one or more loading ports.

6. The device front-end module of claim 1, wherein the plurality of flow elements includes an opening, an aperture, a hole, or a combination of any two or more of the foregoing.

7. The device front-end module of claim 1, wherein each of the plurality of flow elements has a diameter of about 1 mm to about 1 cm.

8. The device front-end module of claim 1, wherein the plurality of flow elements are arranged in columns and rows in or on one or more pipes, and the plurality of flow elements are arranged to be close to one or more loading ports.

9. The device front-end module of claim 1, wherein the plurality of flow elements are configured to induce disturbances in at least a portion of the airflow through the one or more ducts.

10. The device front-end module of claim 1, wherein at least one of the one or more pipes includes a first side and an opposite second side, the first side having a first set of flow elements adjacent to a first loading port, and the second side having a second set of flow elements adjacent to a second loading port.

11. An electronic device manufacturing assembly comprising: a device front-end module (EFEM) including: a plurality of walls, a first wall of the plurality of walls including one or more loading ports; an EFEM chamber formed between the plurality of walls; an upper inflation section located at a top of the EFEM and including an opening into the EFEM chamber; and a plurality of conduits providing a return airflow path enabling gas recirculation from the EFEM chamber to the upper inflation section, wherein the plurality of conduits extend along the first wall, wherein one or more of the conduits include a plurality of flow elements positioned at a height adjacent to the one or more loading ports and configured such that a low-pressure state is present at the location of the one or more loading ports; and one or more substrate carriers coupled to the one or more loading ports.

12. The electronic device manufacturing assembly of claim 11, wherein the one or more conduits extend perpendicularly along the first wall.

13. The electronic device manufacturing assembly of claim 11, wherein at least one of the plurality of conduits is configured to extend between two adjacent loading ports.

14. The electronic device manufacturing assembly of claim 11, wherein the plurality of flow elements comprises one or more of an opening, aperture, hole, perforation, or any combination of two or more of the foregoing.

15. The electronic device manufacturing assembly of claim 11, wherein the plurality of flow elements are arranged in columns and rows in or on each conduit.

16. The electronic device manufacturing assembly of claim 11, wherein each of the plurality of fluid elements is arranged close to one or more loading ports.

17. The electronic device manufacturing assembly of claim 11, wherein at least one of the one or more conduits includes a first side and an opposite second side, the first side having a first set of flow elements adjacent to a first loading port, and the second side having a second set of flow elements adjacent to a second loading port.

Images