Substrate processing apparatus, substrate processing method, and method for manufacturing semiconductor devices

Abstract

[The technical problem to be solved] The subject of this invention is to provide a technology that can reduce the stagnation of gas flow in the exhaust pipe. Technical means to solve the problem The solution of this invention is to provide a technology comprising: a first opening having two parallel sides extending in the long direction, and a first connecting portion that is detachably connected to an opening on a first object side; a second opening having a slightly circular shape, configured to be connected to an opening on a second object side; and a pipe having an internal space formed in the shape of a polyhedron, allowing fluid communication between the aforementioned first opening and the aforementioned second opening.

Description

Conversion piping, substrate processing device, substrate processing method, and semiconductor device manufacturing method The present invention relates to a conversion piping, a substrate processing device, a substrate processing method, and a method for manufacturing a semiconductor device. As one of the steps in the manufacturing of semiconductor devices, a process gas flows through a reaction tube in which a substrate is processed, and a vacuum pump connected to the reaction tube via an exhaust pipe composed of a plurality of pipes is used to exhaust the processed gas (for example, see Patent Document 1). [Prior Art Document] [Patent Document] [Patent Document 1] Japanese Patent Application Laid-Open No. 2004-104034 (Problems that the invention aims to solve) The piping structure of the exhaust pipe can cause stagnation of gas flow, making it easy for by-products to accumulate and sometimes even generate particles. The present invention provides a technology that can reduce the occurrence of stagnation of gas flow in the exhaust pipe. (Technical means for solving the problem) According to one aspect of the present invention, a technique is provided comprising: a first opening having two parallel sides extending in the longitudinal direction, providing a first connecting portion that is removably connectable to an opening on a first object side; a second connecting portion having a slightly circular second opening that is connectable to an opening on a second object side; and a tube having a polyhedral interior space that fluidically connects the first opening and the second opening. (Compare to the effects of the prior art) According to the present invention, the occurrence of stagnation of gas flow in the exhaust pipe can be reduced. <One Aspect of the Invention> Below, one aspect of the present invention will be described primarily with reference to Figures 1 to 7 . The figures used in the following description are schematic, and the dimensional relationships and ratios of the various elements shown in the figures do not necessarily correspond to reality. Furthermore, even among multiple figures, the dimensional relationships and ratios of the various elements do not necessarily correspond. (1) The structure of the substrate processing apparatus is shown in FIG1 . The processing furnace 202 includes a heater 207 as a temperature adjustment unit (heating unit). The heater 207 is cylindrical and is supported and fixed vertically by a holding plate. The heater 207 also functions as an activation mechanism (excitation unit) that activates (excites) the gas using heat. A reaction tube 203 is provided inside the heater 207 in a concentric circle with the heater 207. The reaction tube 203 is made of, for example, quartz (SiO 2) or a heat-resistant material such as silicon carbide (SiC), and is formed into a cylindrical shape with a closed top and an open bottom. Below reaction tube 203, a manifold (inlet) 209 is provided concentrically with reaction tube 203. Manifold 209 is made of a metal material such as stainless steel (SUS) and is formed into a cylindrical shape with open top and bottom ends. The upper end of manifold 209 engages with the lower end of reaction tube 203, supporting reaction tube 203. An O-ring 220a is provided between manifold 209 and reaction tube 203 as a sealing member. Reaction tube 203 is vertically fixed, similar to heater 207. The reaction tube 203 and manifold 209 primarily constitute a processing vessel (reaction container). A processing chamber 201 is formed within the hollow portion of the processing container. Processing chamber 201 is configured to accommodate wafers 200, serving as substrates. In the processing chamber 201 , the wafer 200 is processed. Within processing chamber 201, nozzles 249a through 249c, serving as first through third supply units, are installed so as to penetrate the sidewalls of manifold 209. Nozzles 249a through 249c are also referred to as first through third nozzles, respectively. Nozzles 249a through 249c are made of a heat-resistant material such as quartz or SiC. Gas supply pipes 232a through 232c are connected to nozzles 249a through 249c, respectively. Nozzles 249a through 249c are separate nozzles, and nozzles 249a and 249c are located adjacent to nozzle 249b. Gas supply pipes 232a-232c are provided with mass flow controllers (MFCs) 241a-241c, which are flow controllers (flow control units), and valves 243a-243c, which are on-off valves, in order from the upstream side of the gas flow. Further downstream from valve 243a of gas supply pipe 232a, gas supply pipes 232d and 232f are connected. Further downstream from valve 243b of gas supply pipe 232b, gas supply pipes 232e and 232g are connected. Further downstream from valve 243c of gas supply pipe 232c, gas supply pipe 232h is connected. MFCs 241d-241h and valves 243d-243h are provided in order from the upstream side of the gas flow. Gas supply pipes 232a-232h are made of a metal material such as SUS. As shown in Figure 2, nozzles 249a-249c are positioned within the annular space between the inner wall of the reaction tube 203 and the wafers 200, extending from the lower portion of the inner wall of the reaction tube 203 to the upper portion, extending upward in the direction in which the wafers 200 are arranged. Specifically, nozzles 249a-249c are positioned along the wafer arrangement area, horizontally surrounding the wafer arrangement area and lateral to the wafer arrangement area where the wafers 200 are arranged. In a top view, nozzle 249b is positioned to sandwich the center of a wafer 200 loaded into the processing chamber 201, aligned with exhaust port 209a (described later). Nozzles 249a and 249c are positioned to sandwich a line L passing through the centers of nozzle 249b and exhaust port 209a along the inner wall of the reaction tube 203 (the outer periphery of the wafers 200) from both sides. Line L also passes through nozzle 249b and the center of wafer 200. That is, nozzle 249c is also located on the opposite side of nozzle 249a, sandwiching line L. Nozzles 249a and 249c are arranged symmetrically with line L as the axis of symmetry. Gas supply holes 250a to 250c for supplying gas are provided on the side surfaces of nozzles 249a to 249c, respectively. Gas supply holes 250a to 250c are opened so as to face (opposite) exhaust port 209a in a top view, enabling gas to be supplied toward wafer 200. A plurality of gas supply holes 250a to 250c are provided, spanning from the bottom to the top of reaction tube 203. The nitride gas system is supplied from the gas supply pipe 232 a through the MFC 241 a , the valve 243 a , and the nozzle 249 a into the processing chamber 201 . The raw material gas system is supplied from the gas supply pipe 232 b through the MFC 241 b , the valve 243 b , and the nozzle 249 b into the processing chamber 201 . The etching gas system is supplied from the gas supply pipe 232 c through the MFC 241 c , the valve 243 c , and the nozzle 249 c into the processing chamber 201 . The oxidizing gas system is supplied from the gas supply pipe 232 d into the processing chamber 201 via the MFC 241 d , the valve 243 d , the gas supply pipe 232 a , and the nozzle 249 a . The reducing gas system is supplied from the gas supply pipe 232e into the processing chamber 201 via the MFC 241e, the valve 243e, the gas supply pipe 232b, and the nozzle 249b. The inert gas system is supplied from gas supply pipes 232f-232h through MFCs 241f-241h, valves 243f-243h, gas supply pipes 232a-232c, and nozzles 249a-249c into the processing chamber 201. The inert gas system can function as a purge gas, carrier gas, or dilution gas. The nitriding gas supply system primarily comprises gas supply pipe 232a, MFC 241a, and valve 243a. The raw material gas supply system primarily comprises gas supply pipe 232b, MFC 241b, and valve 243b. The etching gas supply system primarily comprises gas supply pipe 232c, MFC 241c, and valve 243c. The oxidizing gas supply system primarily comprises gas supply pipe 232d, MFC 241d, and valve 243d. The reducing gas supply system primarily comprises gas supply pipe 232e, MFC 241e, and valve 243e. The inert gas supply system primarily comprises gas supply pipes 232f-232h, MFCs 241f-241h, and valves 243f-243h. Among the various supply systems described above, any or all of them may be configured as an integrated supply system 248, which integrates valves 243a-243h and MFCs 241a-241h. The integrated supply system 248 is connected to the gas supply pipes 232a-232h, respectively. The integrated supply system 248 is configured to control the supply of various substances (gases) into the gas supply pipes 232a-232h, i.e., the opening and closing of the valves 243a-243h and the flow rate adjustment by the MFCs 241a-241h, by means of a controller 121 (described later). The integrated supply system 248 can be configured as an integrated or split integrated unit. The accumulation type supply system 248 can be constructed so that the gas supply pipes 232a to 232h can be installed and removed in the accumulation unit unit, and the accumulation type supply system 248 can be repaired, replaced, or expanded in the accumulation unit unit. An exhaust port 209a for exhausting the atmosphere within the processing chamber 201 is provided on the sidewall of the manifold 209. As shown in FIG2 , the exhaust port 209a is located opposite (opposite) the nozzles 249a to 249c (gas supply holes 250a to 250c) and sandwiches the wafer 200 when viewed from above. The exhaust port 209a can also be provided from the lower portion of the sidewall of the reaction tube 203 along the upper portion, that is, along the wafer arrangement area. The exhaust pipe 231 is connected to the exhaust port 209a via an exhaust port 211 and a conversion pipe 212, which will be described later. The exhaust pipe 231 is connected to a vacuum pump 246, which serves as a vacuum exhaust device, via a pressure sensor 246, which serves as a pressure detector (pressure detection unit) for detecting the pressure within the processing chamber 201, and an APC (Auto Pressure Controller) valve 244, which serves as a pressure regulator (pressure adjustment unit). The APC valve 244 is opened and closed while the vacuum pump 246 is in operation, enabling vacuum evacuation and stopping of the processing chamber 201. Furthermore, when the vacuum pump 246 is in operation, the APC valve 244 is configured to adjust the pressure within the processing chamber 201 by adjusting the valve opening / closing degree based on pressure information detected by the pressure sensor 245. The exhaust system primarily comprises the exhaust pipe 231, the APC valve 244, and the pressure sensor 245. The vacuum pump 246 may also be included in the exhaust system. Below the manifold 209, a sealing cap 219 is installed, serving as a furnace port cover that seals the lower opening of the manifold 209 airtightly. The sealing cap 219 is made of a metal material such as SUS and is formed into a disc shape. An O-ring 220b is installed on the top of the sealing cap 219, serving as a sealing member that contacts the lower end of the manifold 209. Below the sealing cap 219, a rotating mechanism 267 is installed to rotate the wafer boat 217, described later. The rotating shaft 255 of the rotating mechanism 267 passes through the sealing cap 219 and is connected to the wafer boat 217. The rotating mechanism 267 is configured to rotate the wafers 200 by rotating the wafer boat 217. The sealing cap 219 is configured to be vertically raised and lowered by the wafer boat elevator 115, a lifting mechanism installed outside the reaction tube 203. The boat elevator 115 may be configured as a transfer device (transfer mechanism) that transfers (transports) the wafers 200 into and out of the processing chamber 201 by raising and lowering the sealing cover 219 . Below the manifold 209, a cassette door 219s, serving as a furnace cover, is installed. This door seals the lower end of the manifold 209 airtightly when the wafer boat 217, with the sealing cover 219 lowered, is removed from the processing chamber 201. The cassette door 219s is made of a metal material, such as SUS, and is formed into a disc shape. An O-ring 220c is installed on the upper surface of the cassette door 219s, serving as a sealing member that contacts the lower end of the manifold 209. The opening and closing motions (lifting, rotating, etc.) of the cassette door 219s are controlled by a cassette door opening and closing mechanism 115s. The wafer boat 217, serving as a substrate support, can be configured to support multiple wafers (e.g., 25 to 200) in a horizontal, aligned, vertically aligned arrangement, arranged in multiple stages. The wafer boat 217 is made of a heat-resistant material such as quartz or SiC. Heat shields 218, also made of a heat-resistant material such as quartz or SiC, are supported in multiple stages at the bottom of the wafer boat 217. A temperature sensor 263 is installed within the reaction tube 203 as a temperature detector. By adjusting the power level to the heater 207 based on the temperature information detected by the temperature sensor 263, the temperature within the processing chamber 201 is maintained at the desired temperature distribution. The temperature sensor 263 is located along the inner wall of the reaction tube 203. (Exhaust Port) As shown in FIG1 , an exhaust port 211 is connected to the exhaust port 209a provided on the side wall of the manifold 209. The exhaust port 211 rises from the manifold 209 and gradually extends outward. Alternatively, the exhaust port 211 may descend from the manifold 209 and gradually extend outward. In this case, the manifold 209 and the exhaust port 211 are joined by welding. The end of the exhaust port 211 on the opposite side of the manifold 209 is connected to the exhaust pipe 231 via the conversion piping 212. The provision of the exhaust port 211 facilitates connection to the conversion piping 212. The exhaust port 209a is formed, for example, into a long, horizontally oriented quadrilateral shape (rectangular, slightly rectangular). Specifically, at each of the four corners of the rectangle, a quarter of a circle is formed, with the arc forming the outer side. In other words, the rectangular or slightly rectangular shape includes two parallel sides extending in the longitudinal direction. As shown in FIG3 , the exhaust port 211 is composed of a cylindrical body 211a having a rectangular cross-section and a flange 211b having a rectangular opening provided on the conversion piping 212 side. The shape of the opening of the cylindrical body 211a on the exhaust port 209a side (the cross-sectional shape of the cylindrical body 211a) is formed to conform to the exhaust port 209a. (Conversion piping) The structure of the conversion piping is explained using Figures 3 and 4. The conversion piping 212 is composed of a first connection part 101, a second connection part 102, a tube 103, and an accordion 104. The first connection part 101 has a rectangular cross-sectional shape. The second connection part 102 has an octagonal cross-sectional shape and a circular cross-sectional shape. The tube 103 is formed in a polyhedron shape, and the different cross-sectional portions of the first connection part 101 and the second connection part 102 are connected to each other. The accordion 104 connects the second connection part 102 and the exhaust pipe 231. The conversion piping 212 can be formed so that the cross-sectional shapes of the first opening 101a on the exhaust port 211 (first object) side and the opening 104a on the exhaust pipe 231 (second object) side are different. The shape of the first opening 101a (the cross-sectional shape of the first connecting portion 101) is slightly rectangular, fitting the opening on the flange 211b side of the exhaust port 211. The first connecting portion 101 has a flat sealing surface with the first flange 101b for connection to the flange 211b of the exhaust port 211. Flange 212b of the exhaust port 211 is secured to the first flange 101b with bolts at the four corners. Gaskets (hollow metal O-rings) or conventional O-rings are provided on the connecting surfaces as sealing material. The first connecting portion 101 maintains an airtight seal with the exhaust port 211 and is removably connected. The second connecting portion 102 is composed of a frame-shaped body (plate) 102b having an octagonal outline and a slightly circular second opening 102a, and a circular tube 102c connected to the second opening 102a and extending toward the exhaust pipe 231. Here, the frame-shaped body 102b and the circular tube 102c can be joined by welding. The frame-shaped body 102b has an octagonal opening 102d on the side of the tube 103, and the cross-sectional area of ​​the opening 102d is larger than the cross-sectional area of ​​the second opening 102a. The frame-shaped body 102b has a wall on the side of the circular tube 102c that fills the step difference between the opening 102d and the second opening 102a. The shape of the opening of the circular tube 102c (the cross-sectional shape of the circular tube 102c) can be formed to conform to the second opening 102a. By being constructed in this way, the second connecting portion 102 can be connected to the tube 103 and the bellows 104. The bellows 104 is composed of a cylindrical body 104c that can be connected to the circular tube 102c of the second connecting portion 102, a cylindrical body 104d that can be connected to the exhaust pipe 231, and a connecting portion 104e that connects the cylindrical bodies 104c and 104d and is capable of expansion and contraction and bending. The cylindrical body 104c and the circular tube 102c, the cylindrical body 104c and the connecting portion 104e, and the connecting portion 104e and the cylindrical body 104d can be joined by welding. The shape of the opening on the second connecting portion 102 side of the circular cylindrical body 104c (the cross-sectional shape of the circular cylindrical body 104c) is formed to conform to the opening of the circular tube 102c. Furthermore, the cross-sectional shape of the circular cylindrical body 104d allows for connection to the circular exhaust pipe 231, while the shape of the opening 104a is formed to be circular, having the same configuration as the exhaust pipe 231. The second flange 104b for connection to the exhaust pipe 231 is provided on the flat sealing surface of the opening 104a. The accordion 104 connects the second opening 102a of the second connection part 102 and the opening 104a in a fluid-connected state. That is, the second opening 102a is configured to be connectable to the exhaust pipe 231. Thereby, the second opening 102a is connected to the vacuum pump 246. In addition, the exhaust pipe 231 and the second flange 104b are fixed by a clamp (Claw Clamp) 213, and a gasket (metal hollow O-ring) or a general O-ring is provided as a sealing material on the connection surface. Thereby, the accordion 104 maintains airtightness with the exhaust pipe 231 and is detachably connected. In addition, because the accordion 104 is elastic, it becomes easy to connect the conversion pipe 212 and the exhaust pipe 231. The tube 103 has an internal space 103a formed in the shape of a polyhedron. In addition to the open surface 103b connected to the first connection part 101 and the open surface 103c connected to the second connection part 102, the polyhedron also has six trapezoidal surfaces and four triangular surfaces arranged between the trapezoidal surfaces. Here, the shape of the open surface 103b connected to the first connection part 101 can be formed into a quadrangular shape. This can match the quadrangular first opening 101a. The shape of the open surface 103c connected to the second connection part 102 can be formed into an octagonal shape. This can match the octagonal opening 102d. The polyhedron that combines trapezoidal and triangular surfaces makes shape transformation possible. Furthermore, for example, when the open surface 103 c connected to the second connection portion 102 has a hexagonal shape, there are two triangular surfaces. The tube 103 can be welded to join the first connecting portion 101 and the second connecting portion 102. A triangular surface 103j is disposed between the trapezoidal surface 103d and the trapezoidal surface 103e, a triangular surface 103k is disposed between the trapezoidal surface 103f and the trapezoidal surface 103g, a triangular surface 103l is disposed between the trapezoidal surface 103g and the trapezoidal surface 103h, and a triangular surface 103m is disposed between the trapezoidal surface 103i and the trapezoidal surface 103d. Tube 103 can be constructed by mechanically bending a flat plate of an alloy primarily composed of nickel to create two tube halves (shells), which are then welded together to form an airtight connection. In this case, one tube half consists of trapezoidal faces 103d, 103e, and 103i and triangular faces 103j and 103m, while the other tube half consists of trapezoidal faces 103f, 103g, and 103h and triangular faces 103k and 103l. The surfaces connecting trapezoidal faces 103e and 103f, and the surfaces connecting trapezoidal faces 103i and 103h, are perpendicular to the surfaces of first opening 101a or second opening 102a. This construction reduces the bending angle to 90 degrees or less, allowing the weld to be entirely welded from the outside of the tube, improving workability. Alternatively, trapezoidal surfaces 103e and 103f can be formed from a flat plate or curved plate having a trapezoidal profile, and trapezoidal surfaces 103h and 103i can be formed from a flat plate or curved plate having a trapezoidal profile. In this case, tube 103 is composed of four trapezoidal surfaces and four triangular surfaces. Trapezoidal surfaces 103d and 103g are formed from a flat plate or curved plate having a trapezoidal profile, while triangular surfaces 103j through 103m are formed from a flat plate or curved plate having a triangular profile. Tube 103 is constructed by welding the edges of the trapezoidal and triangular surfaces together. With the above configuration, the tube 103 establishes fluid communication between the first opening 101a and the second opening 102a. Furthermore, the first opening 101a is connected to the processing chamber 201, and the second opening 102a is connected to the vacuum pump 246. Thus, the processing chamber 201 and the vacuum pump 246 are in fluid communication. In addition, the first opening 101a and the second opening 102a are formed parallel to each other and open in opposite directions relative to the tube 103. Furthermore, the first straight line (tube axis) 111 perpendicularly passing through the center of the first opening 101a and the second straight line (tube axis) 112 perpendicularly passing through the center of the second opening 102a are not aligned. This allows for offset conversion. The first straight line 111 and the second straight line 112 are parallel to each other and spaced apart in a direction perpendicular to the longitudinal direction of the first opening 101a (the vertical direction). This allows for offset conversion in the vertical direction. It is possible to reduce the offset between the direction in which the line connecting the center of the first opening 101a and the center of the second opening 102a extends and the direction in which the center line of the exhaust port 211, which rises and extends toward the outside, extends. The second opening 102a has an area greater than that of the first opening 101a, and the tube 103 continuously changes the flow path cross-sectional area between the open surface 103b connected to the first connection portion 101 and the open surface 103c connected to the second connection portion 102. As shown in FIG3 , the conversion piping 212 can also be arranged so that the second connection portion 102 is flush with one surface of the outer shell 214 of the reaction tube 203, and the entire conversion piping 212 can be housed within the outer shell 214. This allows the interchangeability of piping connections in a modularly designed substrate processing apparatus. (Comparative Example) The conversion piping in the comparative example is constructed with a rectangular pipe having an opening on the exhaust port 211 side that has the same shape as the rectangular opening of the exhaust port 211, with the opening widening toward the exhaust pipe 231. In this case, the wall area representing the difference between the cross-sectional area of ​​the rectangular pipe and the circular pipe is large, as shown by the dashed circle A in Figure 5(a), which can easily cause stagnation of airflow. This stagnation can easily cause the accumulation of byproducts resulting from residual gas, potentially generating particulate matter (PC). Therefore, in this embodiment, the connection from the first connecting portion with a rectangular opening to the second connecting portion with a circular opening in the conversion piping 212 is changed from a square shape to a polygonal shape larger than a pentagon (e.g., an octagon). This reduces the area of ​​the wall surface formed by the second connecting portion 102 compared to the area of ​​the wall surface formed by the rectangular piping and the circular piping. This result, as shown by the dotted circle B in Figure 5(b), can reduce airflow stagnation. This reduces the adhesion of byproducts caused by residual gas, thereby reducing PC generation. As shown in Figure 6, controller 121, which serves as the control unit (control means), is configured as a computer with a CPU (Central Processing Unit) 121a, RAM (Random Access Memory) 121b, a memory device 121c, and an I / O port 121d. RAM 121b, memory device 121c, and I / O port 121d are configured to exchange data with CPU 121a via an internal bus 121e. An output device 122, such as a touch panel, is connected to controller 121. An external memory device 123 can also be connected to controller 121. The memory device 121c is composed of, for example, a flash memory, an HDD (Hard Disk Drive), an SSD (Solid State Drive), etc. In the memory device 121c, the following are readable and stored: a control program for controlling the operation of the substrate processing device, a process recipe that records the procedure sequence and conditions of the substrate processing described later, etc. The process recipe is a combination of the various procedures of the substrate processing described later on the substrate processing device by the controller 121 so as to obtain a predetermined result, and functions as a program. Hereinafter, process recipes, control programs, etc. will also be collectively referred to as simply programs, and process recipes will also be simply referred to as recipes. In this specification, when a language called a program is used, there are cases where only a recipe alone is included, only a control program alone is included, or both of them are included. The RAM 121 b is configured as a memory area (work area) capable of temporarily storing programs and data read by the CPU 121 a . The I / O port 121d is connected to the above-mentioned MFCs 241a~241h, valves 243a~243h, pressure sensor 245, APC valve 244, vacuum pump 246, temperature sensor 263, heater 207, rotation mechanism 267, wafer boat elevator 115, box door switch mechanism 115s, etc. The CPU 121a is configured to read and execute control programs from the memory device 121c, and to read recipes from the memory device 121c in response to input of operation commands from the input / output device 122. The CPU 121a is configured to control, in accordance with the contents of the read recipe, the flow rate adjustment of various substances (gases) from the MFCs 241a to 241h, the opening and closing of the valves 243a to 243h, and the like. Furthermore, the CPU 121a is configured to control, in accordance with the contents of the read recipe, the opening and closing of the APC valve 244, the pressure adjustment of the APC valve 244 by the pressure sensor 245, the start and stop of the vacuum pump 246, and the temperature adjustment of the heater 207 by the temperature sensor 263. In addition, the CPU 121a is configured to control the rotation and rotation speed adjustment of the crystal boat 217 from the rotating mechanism 267, the lifting and lowering of the crystal boat 217 from the crystal boat elevator 115, and the opening and closing of the box door 219s from the box door opening and closing mechanism 115s in accordance with the contents of the read recipe. The controller 121 is configured to be able to install the above-mentioned program stored in the external memory device 123 in a computer. The external memory device 123 includes, for example, magnetic disks such as HDD, optical disks such as CD, optical magnetic disks such as MO, semiconductor memories such as USB memory and SSD. The memory device 121c and the external memory device 123 are configured as computer-readable recording media. Hereinafter, these will be collectively referred to as recording media. In this specification, when the language referred to as recording media is used, there are cases where only the memory device 121c alone is included, only the external memory device 123 alone is included, or both of them are included. In addition, the program provision system for the computer does not use the external memory device 123, but can also use communication means such as the Internet and dedicated lines. (2) Substrate Processing Step A method for processing a substrate as a step in the semiconductor device manufacturing process using the above-described substrate processing apparatus, that is, an example of forming a predetermined film on the surface of a wafer 200 serving as a substrate, will be described using FIG7 . In the following description, the operations of the various components constituting the substrate processing apparatus are controlled by the controller 121. In the film formation process of this embodiment, a film is formed on the wafer 200 by performing a cycle of the following steps non-simultaneously a predetermined number of times (one or more). (a) Supplying a raw material gas to the wafer 200 in the processing chamber 201 (S641) (b) Removing the raw material gas (residual gas) from the processing chamber 201 (S642) (c) Supplying an oxidizing gas to the wafer 200 in the processing chamber 201 (S643) (d) Removing the oxidizing gas (residual gas) from the processing chamber 201 (S644) (e) Supplying a nitriding gas to the wafer 200 in the processing chamber 201 (S645) (f) Removing the nitriding gas (residual gas) from the processing chamber 201 (S646) The term "wafer" used in this specification may refer to the wafer itself or a laminate of a wafer and predetermined layers or films formed on its surface. The term "wafer surface" used in this specification may refer to the surface of the wafer itself or the surface of a predetermined layer formed on the wafer. In this specification, when it is stated that "a predetermined layer is formed on the wafer", it may refer to forming the predetermined layer directly on the surface of the wafer itself or forming the predetermined layer on a layer formed on the wafer. In this specification, the term "substrate" is also used, which is synonymous with the term "wafer". (S61: Wafer Replenishment, S62: Boat Loading) Once the wafers 200 are loaded (wafer filling) onto the wafer boat 217, the door opening mechanism 115s moves the door 219s, opening the lower end of the manifold 209 (door opening). Subsequently, as shown in FIG1 , the wafer boat 217, supporting the wafers 200, is lifted by the boat elevator 115 and loaded into the processing chamber 201 (boat loading). In this state, the sealing cap 219 seals the lower end of the manifold 209 via the O-ring 220b. Thus, the wafers 200 are loaded into the processing chamber 201. (S63: Decompression and Vacuum Pumping) After the wafer boat is loaded, the space within the processing chamber 201, i.e., the space containing the wafers 200, is brought to the desired pressure (vacuum level) and evacuated (decompression and evacuation) by the vacuum pump 246. The pressure within the processing chamber 201 is measured by the pressure sensor 245, and the APC valve 244 is feedback-controlled based on this measured pressure information. Furthermore, the wafers 200 within the processing chamber 201 are heated to the desired processing temperature (first temperature) by the heater 207. At this point, the power level of the heater 207 is feedback-controlled based on the temperature information detected by the temperature sensor 263, so that the desired temperature distribution within the processing chamber 201 is achieved. Furthermore, the rotation of the wafers 200 by the rotation mechanism 267 is initiated. The exhaust of the processing chamber 201 and the heating and rotation of the wafers 200 continue for at least the duration of the processing of the wafers 200. (S64: Film Formation Process) When the temperature within the processing chamber 201 stabilizes at the preset processing temperature, the next six sub-steps, namely, S641, S642, S643, S644, S645, and S646, are sequentially executed. Furthermore, during this period, the wafer boat 217 is rotated via the rotation axis 255 by the rotation mechanism 267, thereby rotating the wafer 200. (S641: Raw Material Gas Supply) In this step, raw material gas is supplied to wafer 200 in processing chamber 201, forming the first layer on the outermost surface of wafer 200. Specifically, valve 243b is opened to allow raw material gas to flow into gas supply pipe 232b. The raw material gas system has its flow rate regulated by MFC 241b and is supplied to the processing area in processing chamber 201 through gas supply hole 250b of nozzle 249b. It is then exhausted from exhaust pipe 231 via exhaust port 209a, exhaust port 211, and conversion pipe 212. Simultaneously, valve 243g is opened to allow inert gas to flow into gas supply pipe 232g. The inert gas system has its flow rate regulated by MFC 241g and is supplied to the processing area in processing chamber 201 through gas supply hole 250b of nozzle 249b. It is then exhausted from exhaust pipe 231 via exhaust port 209a, exhaust port 211, and conversion pipe 212. Furthermore, the inert gas is simultaneously supplied into the processing area within the processing chamber 201 through the gas supply holes 250a and 250c of the nozzles 249a and 249c, and exhausted from the exhaust pipe 231 through the exhaust port 209a, the exhaust port 211, and the conversion pipe 212. At this time, the controller 121 performs constant pressure control to set the first pressure as the target pressure. Here, as the raw material gas, for example, a gas containing silicon (Si) can be used. Specifically, hexachlorodisilane (Si 2Cl 6, abbreviated as: HCDS) gas. (S642: Raw Material Gas Exhaust) After the first layer is formed, valve 243b is closed to stop the supply of raw material gas, and APC valve 244 is simultaneously fully opened. This allows the interior of process chamber 201 to be evacuated, and any remaining unreacted raw material gas or any remaining raw material gas that has acted on the first layer after formation is exhausted. Furthermore, with valve 243g open, inert gas can be supplied to process chamber 201 to purge any remaining gas. The flow rate of the purge gas from nozzle 249b is set such that the partial pressure of the low vapor pressure gas in the exhaust path falls below the saturated vapor pressure, or the flow rate within reaction tube 203 exceeds the diffusion rate. (S643: Oxidizing Gas Supply) After step S642 is completed, valve 243d is opened to allow oxidizing gas to flow into gas supply pipe 232d, supplying oxidizing gas to wafer 200 within processing chamber 201, specifically, to the first layer formed on wafer 200. The oxidizing gas system has its flow rate regulated by MFC 241d and is supplied to the processing area within processing chamber 201 through gas supply port 250a of nozzle 249a. The gas is then exhausted from exhaust pipe 231 via exhaust port 209a, exhaust port 211, and conversion pipe 212. Simultaneously, valve 243f is opened to allow inert gas to flow into gas supply pipe 232f. The inert gas system, whose flow rate is adjusted by MFC 241f, is supplied to the processing area within the processing chamber 201 through the gas supply hole 250a of the nozzle 249a, along with the oxidizing gas. The inert gas is then exhausted from the exhaust pipe 231 via the exhaust port 209a, the exhaust port 211, and the conversion pipe 212. Furthermore, the inert gas system is simultaneously supplied to the processing area within the processing chamber 201 through the gas supply holes 410a and 430a of the nozzles 410 and 430. The inert gas is then exhausted from the exhaust pipe 231 via the exhaust port 209a, the exhaust port 211, and the conversion pipe 212. At this time, the controller 121 performs constant pressure control to set the second pressure at the target pressure. Here, the oxidizing gas is a gas composed of, for example, oxygen (O). Preferably, it is a gas composed of oxygen alone. Specifically, oxygen (O 2) Qi. (S644: Oxidizing Gas Supply) After a predetermined time has passed since the start of oxidizing gas supply, valve 243d is closed to stop the oxidizing gas supply, and constant pressure control (i.e., full-open control) is performed with the target pressure set to zero. This evacuates the interior of processing chamber 201, and any oxidizing gas remaining in processing chamber 201, either unreacted or having acted on the first layer after formation, is exhausted. At this point, as in step S642, a predetermined amount of inert gas can be supplied into processing chamber 201 as a purge gas. (S645: Nitriding Gas Supply) After step S644 is completed, valve 243a is opened to allow nitriding gas to flow into gas supply pipe 232d, supplying nitriding gas to wafer 200 within processing chamber 201, specifically, to the first layer formed on wafer 200. The nitriding gas system has its flow rate regulated by MFC 241a and is supplied to the processing area within processing chamber 201 through gas supply hole 250a of nozzle 249a. The gas is then exhausted from exhaust pipe 231 via exhaust port 209a, exhaust port 211, and conversion pipe 212. Simultaneously, valve 243f is opened to allow inert gas to flow into gas supply pipe 232f. The inert gas system, whose flow rate is adjusted by MFC 241f, is supplied to the processing area within the processing chamber 201 through the gas supply hole 250a of the nozzle 249a, along with the nitriding gas. The inert gas system is exhausted from the exhaust pipe 231 via the exhaust port 209a, the exhaust port 211, and the conversion pipe 212. Furthermore, the inert gas system is simultaneously supplied to the processing area within the processing chamber 201 through the gas supply holes 410a and 430a of the nozzles 410 and 430, and exhausted from the exhaust pipe 231 via the exhaust port 209a, the exhaust port 211, and the conversion pipe 212. At this time, the controller 121 performs constant pressure control to set the third pressure as the target pressure. For example, the first pressure, the second pressure, or the third pressure is 100 to 5000 Pa. Here, as the nitriding gas, ammonia (NH 3) Qi. In this specification, numerical ranges such as "100-5000 Pa" are intended to include both lower and upper limits. Thus, for example, "100-5000 Pa" means "100 Pa or more and 5000 Pa or less." The same applies to other numerical ranges. (S644: Nitriding Gas Exhaust) After a predetermined time has passed since the start of the nitriding gas supply, valve 243a is closed to stop the nitriding gas supply, and constant pressure control (i.e., full-open control) is performed with the target pressure set to 0. Thus, the processing chamber 201 is vacuum-exhausted, and the nitriding gas remaining in the processing chamber 201 that has not reacted or has acted on the first layer after formation is exhausted. At this time, as in step S642, a predetermined amount of inert gas can be supplied into the processing chamber 201 as a purge gas. The ultimate pressure during the exhaust of the raw gas, the oxidizing gas, or the nitriding gas is 100 Pa or less, preferably 10 to 50 Pa. The pressure in the processing chamber 201 during the supply and exhaust phases may differ by more than 10 times. (S647: Predetermined number of executions) By performing the above steps S641 to S647 sequentially for a predetermined number of times (n times, where n is an integer greater than 1) without overlapping in time, a film of a predetermined composition and a predetermined film thickness can be formed on the wafer 200. For example, when HCDS gas is used as the raw material gas and O 2 gas as oxidizing gas, and NH When 3 gas is used as a nitriding gas, a silicon oxynitride film (SiON film) can be formed. (Step S65: Purge Step) After the film formation step is completed, an inert gas serving as a purge gas is supplied from nozzles 249a-249c into the processing chamber 201. The gas is exhausted from exhaust port 209a, exhaust port 211, and conversion piping 212 through exhaust pipe 231. This purges the processing chamber 201, removing any remaining gas and byproducts (subsequent purge). Subsequently, the atmosphere within the processing chamber 201 is replaced with an inert gas (inert gas replacement), and the pressure within the processing chamber 201 is restored to normal pressure (atmospheric pressure recovery). (S67: Wafer Boat Unloading, S68: Wafer Removal) Subsequently, the sealing cover 219 is lowered by the boat elevator 115, opening the lower end of the manifold 209. The processed wafers 200 are then unloaded from the lower end of the manifold 209 to the exterior of the reaction tube 203 while supported by the boat 217 (boat unloading). Following boat unloading, the cassette door 219s is moved, sealing the lower end opening of the manifold 209 via the O-ring 220c (cassette door closing). After being unloaded from the reaction tube 203, the processed wafers 200 are removed from the boat 217 (wafer removal). (3) Effects of this aspect According to this aspect, one or more of the following effects can be obtained. (a) The tube 103 of the conversion piping 212 has an internal space formed in a polyhedral shape, and the substantially rectangular first opening 101a and the substantially circular second opening 102a are in fluid communication with each other, thereby enabling shape conversion. (b) The tube 103 of the conversion piping 212 has a polyhedral interior space, allowing fluid communication between the slightly rectangular first opening 101a and the slightly circular second opening 102a. This reduces the step difference when converting from a square tube to a round tube, eliminating airflow stagnation in the corners, thereby preventing byproduct accumulation at the corners and suppressing PC production. (c) Since the tube 103 is formed of a polyhedron, it is easier to manufacture than when it is formed of a complex curved surface. (d) Since the tube 103 is composed of a polyhedron, the length of the tube required for the conversion can be shortened. (e) The first connection portion 101 of the conversion pipe 212 is detachably connected to the opening on the other side (the opening of the exhaust port 211). This does not hinder the installation and removal of the manifold 209 because it is not integrated with the manifold 209 but can be separated. (f) The tube 103 is configured so that a first straight line (tube axis) 111 perpendicularly passing through its center at the first opening 101a and a second straight line (tube axis) 112 perpendicularly passing through its center at the second opening 102a do not coincide with each other. This allows for offset conversion. (g) The opening 102d of the second connecting portion 102 has an area greater than that of the first opening 101a. The tube 103 continuously changes its flow path cross-sectional area between its open surface 103b connected to the first opening 101a and its open surface 103c connected to the opening 102d of the second connecting portion 102. This allows for diameter conversion. (h) Tube 103 can simultaneously transform its shape, diameter, and offset using a single pipe. This reduces flow path irregularities and conductance compared to the step-by-step transformations performed by multiple components. Furthermore, fewer pipe joints, which are susceptible to cooling due to heating, reduce the accumulation of byproducts. Furthermore, dead space is reduced. (i) Because the diameter of tube 103 can be changed, the diameter of exhaust pipe 231 can be increased. This improves exhaust efficiency and increases the flow rate of source gases flowing within processing chamber 201. This advances the three-dimensionalization of device structures and the miniaturization of patterns, and enables film formation processes for devices with miniaturized patterns and three-dimensional structures with higher film uniformity. <Other aspects of the present invention> Although aspects of the present invention have been specifically described above, the present invention is not limited to the above aspects and various modifications are possible without departing from the spirit and scope of the present invention. The above-mentioned aspects are described with reference to an example of forming a film using a batch-type substrate processing apparatus that processes multiple substrates at a time. The present invention is not limited to the above-mentioned aspects and can be appropriately applied to, for example, a film formed using a cluster-type substrate processing apparatus that processes one or more substrates at a time. Furthermore, the above-mentioned aspects are described with reference to an example of forming a film using a substrate processing apparatus having a hot-wall processing furnace. The present invention is not limited to the above-mentioned aspects and can be appropriately applied to a film formed using a substrate processing apparatus having a cold-wall processing furnace. Even when using such substrate processing devices, each process can be performed according to the same processing procedures and processing conditions as those in the above-mentioned aspects, and the same effects as those in the above-mentioned aspects and variations can be obtained. 101: 1st connection part 101a: 1st opening 101b: 1st flange 102: 2nd connection part 102a: 2nd opening 102b: frame 102c: circular tube 102d: opening 103: tube 103a: internal space 103b: open surface 103c: open surface 103d: trapezoidal surface 103e: trapezoidal surface 103f: trapezoidal surface 103g: trapezoidal surface 103h: trapezoidal surface 103 i: Trapezoidal surface 103j: Triangular surface 103k: Triangular surface 103l: Triangular surface 103m: Triangular surface 104: Bellows 104a: Opening 104b: Second flange 104c: Circular cylindrical body 104d: Circular cylindrical body 104e: Connecting portion 111: First straight line 112: Second straight line 115: Crystal boat elevator 115s: Cassette door opening and closing mechanism 121: Controller 121a: CPU 121b: RAM 121c: Memory device 121d: I / O port 121e: Internal path 122: Input / output device 123: External memory device 200: Wafer 201: Processing chamber 202: Processing furnace 203: Reaction tube 207: Heater 209: Manifold 209a: Exhaust port 211: Exhaust port 211a: Cylinder 211b: Flange 212: Conversion piping 213: Clamp 214: Housing 217: Wafer boat 218: Insulation plate 219: Sealing cover 219s: Cassette door 220a-220c: O-ring 231: Exhaust pipe 232a-232h: Gas supply pipe 241a-241h: MFC 243a~243h: Valve 244: APC valve 245: Pressure sensor 246: Vacuum pump 248: Accumulation type supply system 249a~249c: Nozzle 250a~250c: Gas supply hole 255: Rotating shaft 263: Temperature sensor 267: Rotating mechanism FIG1 is a schematic diagram of the structure of a vertical processing furnace of a substrate processing apparatus suitable for use in one embodiment of the present invention, showing a portion of the processing furnace 202 in a longitudinal cross-sectional view. FIG2 is a schematic diagram of the structure of a vertical processing furnace of a substrate processing apparatus suitable for use in one embodiment of the present invention, showing a portion of the processing furnace 202 in a cross-sectional view taken along line AA of FIG1 . FIG3 is an oblique view of an exhaust port, a conversion piping, and an exhaust pipe in one embodiment of the present invention. FIG4 is a cross-sectional view of the conversion piping in one embodiment of the present invention. FIG5(a) is a diagram showing the results of a gas flow simulation in the conversion piping of a comparative example. FIG5(b) is a diagram showing the results of a gas flow simulation in the conversion piping in one embodiment of the present invention. FIG6 is a schematic diagram of the structure of a controller 121 of a substrate processing apparatus suitable for use in one embodiment of the present invention, showing the control system of the controller 121 in a block diagram. FIG7 is a diagram showing the processing flow in one embodiment of the present invention. 101: First connection part 101a: Opening 1 101b: 1st flange 102a: Second opening 102b: Frame body 102c: round tube 102d: Opening 103a: Interior Space 103b: Open face 103c: open surface 103d: Trapezoid face 103g: Trapezoid surface 103h: Trapezoid face 103i: Trapezoid surface 1031:Trigonal face 103m:triangular face 104a: Opening 104b: Second flange 104c: round cylindrical body 104d: circular cylindrical body 104e: Connecting part 111: Line 1 112: Second straight line 212: Conversion piping

Claims

1. A substrate processing apparatus comprising: a reaction tube having an opening for a substrate to enter or exit; a cylindrical inlet having an exhaust port extending outward from a side and rising or falling, and connected to the opening of the reaction tube; and a changeover pipe connected to the exhaust port; the changeover pipe comprising: a first opening having a shape including two parallel sides extending in the long direction and corresponding to the exhaust port, and a first connecting portion for detachably connecting to an opening on a first target side; a second connecting portion having a slightly circular second opening configured to connect to an opening on a second target side; and a pipe having an internal space formed in the shape of a polyhedron for fluid communication between the first opening and the second opening.

2. The substrate processing apparatus as described in claim 1, wherein, The first opening is slightly rectangular, and the multifaceted system is connected to the first connecting part in a 4-corner shape, and to the second connecting part in a 5-corner or higher polygonal shape.

3. The substrate processing apparatus as described in claim 1, wherein, The first opening and the second opening are parallel to each other in the terrain, forming mutually opposing openings.

4. The substrate processing apparatus as described in claim 1, wherein, The first connecting part has a first flange that is directly connected to the first object side on a flat sealing surface.

5. The substrate processing apparatus as claimed in claim 1, wherein, The conversion piping system further includes: a second flange that is directly connected to the opening on the second object side of the flat sealing surface; and a bellows that connects the second opening of the second connection portion to the second flange in a fluid communication state.

6. The substrate processing apparatus as claimed in claim 1, wherein, In addition to the open face connected to the first connecting part and the open face connected to the second connecting part, the multifaceted system also has four or more trapezoidal faces and two or more triangular faces arranged between the various faces of the trapezoids.

7. The substrate processing apparatus as described in claim 6, wherein, The open octagonal surface connected to the second connecting part has four triangular faces.

8. The substrate processing apparatus as described in claim 6, wherein, The trapezoidal surface is formed by a flat plate or curved plate with a trapezoidal profile, and the triangular surface is formed by a flat plate or curved plate with a triangular profile. The tube system is formed by fusing the edges of the trapezoidal surface and the triangular surface together.

9. The substrate processing apparatus as claimed in claim 1, wherein, The second connecting part comprises: an octagonal profile; a plate having a circular second opening provided on its inner side; and a circular tube connecting the second opening and extending toward the second object side.

10. The substrate processing apparatus as claimed in claim 1, wherein, The piping system is formed by joining at least two shells that are divided by a vertical plane from the first or second opening to form an airtight structure.

11. The substrate processing apparatus as claimed in claim 10, wherein, The shell is made of at least two nickel alloys and is formed by bending a flat plate.

12. The substrate processing apparatus as claimed in claim 1, wherein, The first straight line perpendicular to the center of the first opening is not the same as the second straight line perpendicular to the center of the second opening.

13. The substrate processing apparatus as claimed in claim 12, wherein, The first straight line and the second straight line are parallel to each other and offset in a direction perpendicular to the long side of the first opening.

14. The substrate processing apparatus as claimed in claim 1, wherein, The second opening has an area greater than or equal to that of the first opening, and the flow path cross-sectional area of ​​the pipe system changes continuously between the open surface connected to the first connection and the open surface connected to the second connection.

15. The substrate processing apparatus as claimed in claim 1, wherein, The second opening is connected to the exhaust device.

16. The substrate processing apparatus of claim 1 further includes a housing of the reaction tube; the entire conversion piping is housed within the housing, or the second connection portion is formed to be the same surface as one side of the housing.

17. A substrate processing method, which uses the substrate processing apparatus of claim 1.

18. A method for manufacturing a semiconductor device, wherein the substrate processing apparatus of claim 1 is used.

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