Substrate processing apparatus
Patent Information
- Authority / Receiving Office
- TW · TW
- Patent Type
- Patents
- Current Assignee / Owner
- SCREEN HOLDINGS CO LTD
- Filing Date
- 2024-04-08
- Publication Date
- 2026-08-01
Smart Images
Figure TWG2TB001903537_001 
Figure TWG2TB001903537_002 
Figure TWG2TB001903537_003
Abstract
Description
Technical Field
[0001] The present invention relates to a substrate processing device for processing a substrate. [Reference to related applications] This application claims the benefit of priority from Japanese patent application JP2023-063920 filed on April 11, 2023, and all disclosures of that application are incorporated into this application. Prior Art
[0002] Conventionally, various processes are performed on semiconductor substrates (hereinafter referred to as "substrates") during the manufacturing process. For example, a substrate held horizontally on a substrate holder is rotated, and a processing liquid is supplied to the surface of the rotating substrate, thereby performing liquid processing on the substrate.
[0003] In the wet etching apparatus disclosed in Japanese Patent Application Laid-Open No. 2009-142818 (Document 1), a Bernoulli chuck is used as a substrate holder to hold the substrate. High-pressure gas is supplied between the substrate and a support located below the substrate. The negative pressure generated by the gas flowing along the substrate's lower surface draws the substrate toward the support. The gas is supplied into the space between the substrate and the support from an annular nozzle formed on the upper surface of the support, below the substrate's outer periphery. An annular gas discharge portion is provided on the support, extending radially outward from the annular nozzle and away from the substrate downward. Below the gas discharge portion, an annular gas discharge path is provided, extending radially outward and downward from the annular nozzle.
[0004] In this wet etching apparatus, etching liquid supplied to the upper surface of the substrate flows back from the outer periphery of the substrate to the lower surface, filling the gap between the peripheral portion of the substrate's lower surface and the upper surface of the gas exhaust portion of the support. This process etches the peripheral portion of the substrate's lower surface. The etching liquid that flows back to the substrate's lower surface is discharged radially outward through a gas exhaust passage. Furthermore, gas supplied between the substrate and the support from an annular nozzle is also discharged radially outward through this gas exhaust passage.
[0005] However, unlike the etching process described in Reference 1, liquid treatment of substrates also requires preventing the process liquid supplied to the upper surface of the substrate from flowing back onto the lower surface. However, when a Bernoulli chuck is used to hold the substrate, the negative pressure generated between the substrate and the support member sucks the process liquid supplied to the upper surface and flowing down from the outer periphery of the substrate, causing the process liquid to easily flow back onto the lower surface. This backflow is particularly likely to occur in the area radially outward of the support pins that contact the outer periphery of the lower surface of the substrate and support the substrate from below. Summary of the Invention
[0006] The invention is suitable for a substrate processing device for processing a substrate, and aims to inhibit the processing liquid on the radial outer side of the supporting pin from flowing back to the lower surface of the substrate.
[0007] Aspect 1 of the present invention is a substrate processing device for processing a substrate, comprising: a substrate holding portion that holds the substrate in a horizontal state; a substrate rotating mechanism that rotates the substrate holding portion about a central axis extending in the vertical direction; and a processing liquid supply portion that supplies processing liquid to the upper surface of the substrate. The substrate holding portion comprises: a base portion having a base surface facing the lower surface of the substrate; a plurality of support pins arranged circumferentially on the base surface and projecting upward from the base surface to contact the outer peripheral portion of the lower surface of the substrate; a gas supply portion that supplies gas between the lower surface of the substrate and the base surface of the base portion, forming a radially outward gas flow, thereby generating a pressure drop in the space between the substrate and the base portion by the Bernoulli effect; and a plurality of rectifying protrusions arranged circumferentially on the base surface radially inward of the plurality of support pins and projecting upward from the base surface. The gas supply portion includes a plurality of gas delivery ports arranged circumferentially on the base surface, radially inwardly of the plurality of rectifying protrusions, and radially outwardly delivering gas supplied from a gas supply source. The plurality of gas delivery ports and the plurality of rectifying protrusions are respectively arranged at positions circumferentially offset from the plurality of support pins. One of the plurality of rectifying protrusions is radially opposed to one of the plurality of gas delivery ports. When gas delivered from the one gas delivery port collides with the one rectifying protrusion, the flow direction of the gas is changed so that it approaches the one of the plurality of support pins that is circumferentially closest to the one rectifying protrusion.
[0008] In the present invention, it is possible to prevent the processing liquid from flowing back toward the lower surface of the substrate from the radially outer side of the support pins.
[0009] Aspect 2 of the present invention is the substrate processing apparatus according to aspect 1, wherein the rectifying protrusion includes a collision surface for collision with gas discharged from the gas outlet. The collision surface is inclined relative to a radial direction from the central axis toward the center of the rectifying protrusion so as to face the support pin or a region radially outward of the support pin.
[0010] Aspect 3 of the present invention is a substrate processing apparatus according to aspect 1 (or aspect 1 or 2), wherein the rectifying protrusion is cylindrical and extends upward from the base surface. The rectifying protrusion, when viewed from above, is elliptical with a major axis inclined relative to the radial direction. The radially outer end of the major axis is circumferentially closer to the support pin than the radially inner end.
[0011] Aspect 4 of the present invention is the substrate processing apparatus according to aspect 3, wherein the rectifying protrusion includes a collision surface for collision with the gas discharged from the gas outlet. In a top view, a tangent to the collision surface at the intersection of the minor axis of the rectifying protrusion and the collision surface is oriented toward the support pin or a region radially outward of the support pin.
[0012] Aspect 5 of the present invention is a substrate processing device as in aspect 1 (or any one of aspects 1 to 4), wherein the plurality of rectifying protrusions are spaced downward from the lower surface of the substrate.
[0013] Aspect 6 of the present invention is a substrate processing device as in aspect 1 (or any one of aspects 1 to 5), wherein the above-mentioned rectifying protrusion is located on the front side of the rotation direction of the above-mentioned substrate relative to the above-mentioned supporting pin.
[0014] Aspect 7 of the present invention is a substrate processing apparatus according to any one of aspects 1 to 6, wherein the support pin is circumferentially located between the first rectifying protrusion and the other rectifying protrusions. The other rectifying protrusions are radially opposed to other gas outlets of the plurality of gas outlets that are different from the first gas outlet. When gas discharged from the other gas outlets collides with the other rectifying protrusions, the flow direction of the gas is changed so that the gas approaches the support pin.
[0015] The above-mentioned objects and other objects, features, aspects and advantages will become more apparent from the following detailed description of the present invention with reference to the accompanying drawings. Simple diagram description
[0016] FIG. 1 is a top view showing a substrate processing system according to one embodiment. FIG2 is a side view showing the structure of a substrate processing apparatus. FIG3 is a top view showing a substrate holding portion. FIG4 is a cross-sectional view showing a portion of the substrate holding portion. FIG5 is a cross-sectional view showing the outer periphery of the substrate holding portion. FIG6 is a top view showing the vicinity of one of the supporting pins of the substrate holding portion. FIG7 is a top view showing the vicinity of one of the supporting pins of the substrate holding portion. FIG8 is a cross-sectional view showing the vicinity of one of the supporting pins of the substrate holding portion. FIG9 is a diagram showing the flow of gas on the base portion. FIG. 10 is a diagram showing the flow of gas on a susceptor portion in a substrate holding portion of a comparative example. Implementation Method
[0017] FIG1 is a schematic top view illustrating the layout of a substrate processing system 10 equipped with a substrate processing apparatus according to one embodiment of the present invention. The substrate processing system 10 processes a semiconductor substrate 9 (hereinafter referred to as "substrate 9"). The substrate processing system 10 includes a loading block 101 and a processing block 102 coupled to the loading block 101.
[0018] The loading block 101 includes a carrier holding unit 104, a loading robot 105, and an IR (Indexer Robot) moving mechanism 106. The carrier holding unit 104 holds a plurality of carriers 107 capable of accommodating a plurality of substrates 9. The plurality of carriers 107 (e.g., FOUPs (Front Opening Unified Pods)) are held in the carrier holding unit 104 in an aligned state along a predetermined carrier arrangement direction. The IR moving mechanism 106 moves the loading robot 105 in the carrier arrangement direction. The loading robot 105 unloads substrates 9 from the carriers 107 and loads substrates 9 into the carriers 107 held in the carrier holding unit 104. The substrates 9 are transported by the loading robot 105 in a horizontal position.
[0019] The processing block 102 includes a plurality (e.g., four or more) of processing units 108 that process substrates 9, and a central robot 109. The processing units 108 are arranged so as to surround the central robot 109 when viewed from above. Various processes are performed on the substrates 9 in the processing units 108. The substrate processing apparatus described below is one of the processing units 108. The central robot 109 loads substrates 9 into and out of the processing units 108. Furthermore, the central robot 109 transports substrates 9 between the processing units 108. The central robot 109 transports substrates 9 in a horizontal position. The central robot 109 receives substrates 9 from the loader robot 105 and transfers them to the loader robot 105.
[0020] FIG2 is a side view showing the structure of a substrate processing apparatus 1. FIG2 shows a portion of the structure of the substrate processing apparatus 1 in cross-section. The substrate processing apparatus 1 is a single-wafer apparatus that processes substrates 9 one by one. The substrate processing apparatus 1 supplies a processing liquid to the substrates 9 to perform liquid processing. During this liquid processing, for example, before loading the substrate into the substrate processing apparatus 1, foreign matter adhering to the substrates 9 is removed (i.e., cleaned). Such foreign matter may be, for example, residue remaining on the surface of the substrates 9 during grinding. In the following description, the upper side and lower side in FIG2 are also referred to simply as "upper side" and "lower side."
[0021] The substrate processing apparatus 1 includes a substrate holding unit 2, a substrate rotating mechanism 3, a protective cover 4, a processing liquid supply unit 51, a processing unit moving mechanism 52, and a chamber 11. The substrate holding unit 2, the substrate rotating mechanism 3, the protective cover 4, and the processing liquid supply unit 51 are housed within the interior space of the chamber 11. An airflow forming unit 12 is provided on the top cover of the chamber 11. The airflow forming unit 12 supplies gas into the interior space, forming a downward airflow (so-called downflow). For example, an FFU (Fan Filter Unit) is used as the airflow forming unit 12. Furthermore, an airflow forming unit 12 other than an FFU may also be provided in the substrate processing apparatus 1.
[0022] The substrate holder 2 and substrate rotation mechanism 3 are each part of a rotary chuck that holds and rotates a roughly circular substrate 9. The substrate holder 2 holds the horizontal substrate 9 from below. The substrate holder 2 is a Bernoulli chuck that uses the Bernoulli effect to attract and hold the substrate 9. For example, the substrate 9 is a roughly circular substrate with a diameter of 300 mm.
[0023] FIG3 is a top view of the substrate holder 2. FIG4 is a cross-sectional view of the substrate holder 2 taken along line IV-IV in FIG3 . In FIG4 , a portion further inward than the cross-sectional view (i.e., the support pins 22 and the rectifying protrusions 24) is indicated by thin lines. Furthermore, in FIG4 , the substrate 9 held by the substrate holder 2 is indicated by a two-dot chain line. As shown in FIG3 and FIG4 , the substrate holder 2 includes a base 21, a plurality of support pins 22, a gas supply portion 23, and a plurality of rectifying protrusions 24. The plurality of support pins 22 have substantially the same shape. The plurality of rectifying protrusions 24 also have substantially the same shape.
[0024] The base portion 21 is a generally circular plate-shaped member centered on a vertically oriented central axis J1. The substrate 9 is spaced apart from the base portion 21 and disposed above it. The upper principal surface 210 of the base portion 21 (hereinafter referred to as the "base surface 210") is positioned downward from the lower principal surface of the substrate 9 (hereinafter referred to as the "lower surface 92") and vertically opposes the lower surface 92 of the substrate 9. The diameter of the base portion 21 is larger than that of the substrate 9. The base surface 210 extends outward from the outer periphery of the substrate 9 along the entire circumference in a radial direction (hereinafter referred to as the "radial direction") centered on the central axis J1.
[0025] A plurality of support pins 22 are arranged on the base surface 210 of the base portion 21, spaced apart from one another in the circumferential direction (hereinafter referred to as the "circumferential direction") centered on the central axis J1. The plurality of support pins 22 are arranged on the same circumference centered on the central axis J1. The plurality of support pins 22 are arranged, for example, at approximately equal angular intervals in the circumferential direction. In the example shown in FIG3 , the number of the plurality of support pins 22 is 30. The plurality of support pins 22 are protrusions projecting upward from the base surface 210. Each support pin 22 has a generally hemispherical shape, for example. The plurality of support pins 22 are fixed to the base portion 21 and do not move relative to the base portion 21. The substrate holding portion 2 holds the substrate 9 in a generally horizontal position in a non-contact manner at the center of the lower surface 92 of the substrate 9 by bringing the plurality of support pins 22 into contact with the outer circumference of the lower surface 92 of the substrate 9 from below.
[0026] The gas supply portion 23 includes a plurality of gas outlets 232 provided on the base surface 210 of the base portion 21. The plurality of gas outlets 232 are arranged downwardly from the lower surface 92 of the substrate 9 at positions overlapping the substrate 9 when viewed from above. The plurality of gas outlets 232 are arranged radially outwardly from the central axis J1 and spaced apart from each other circumferentially on the same circumference centered on the central axis J1. The number of the plurality of gas outlets 232 is, for example, 150. The plurality of gas outlets 232 are arranged circumferentially below the substrate 9, radially inwardly of the plurality of support pins 22 and the plurality of rectifying protrusions 24. The plurality of gas outlets 232 are arranged at positions circumferentially offset from the plurality of support pins 22.
[0027] The plurality of gas outlets 232 are connected to a gas supply source (not shown) via a gas flow path 231 provided within the base portion 21. Gas supplied from the gas supply source to the gas flow path 231 is discharged radially outward and upward (i.e., diagonally upward) from each gas outlet 232. The shape of the gas outlet 232, as viewed along the direction of gas discharge from the gas outlet 232, is, for example, generally circular. The shape of the gas outlet 232 can be modified in various ways. Furthermore, the arrangement and number of the gas outlets 232 can also be modified in various ways.
[0028] The gas supply portion 23 further includes a central gas outlet 234 disposed in the center of the base surface 210. The central gas outlet 234 is, for example, a single outlet positioned so as to be spaced downward from the lower surface 92 of the substrate 9 and overlap the central axis J1 when viewed from above. The central gas outlet 234 is connected to the aforementioned gas supply source via a gas flow path 233 disposed within the base portion 21. Gas is discharged from the central gas outlet 234 in a direction substantially vertically upward (i.e., along the central axis J1). The shape of the central gas outlet 234, as viewed along the direction of gas discharge from the central gas outlet 234, is, for example, substantially circular. This shape of the central gas outlet 234 can be modified in various ways. Furthermore, the arrangement and number of the central gas outlets 234 can also be modified in various ways.
[0029] In the gas supply unit 23, gas is supplied from the central gas outlet 234 and the plurality of gas outlets 232 into the space between the lower surface 92 of the substrate 9 and the base surface 210 of the base unit 21 (hereinafter referred to as the "lower space 90"). This gas is, for example, an inert gas such as nitrogen, or air. It is, for example, high-pressure or compressed gas. The gas supplied from the central gas outlet 234 and the plurality of gas outlets 232 flows radially outward in the lower space 90. This creates an airflow from the radial center toward the radially outward direction in the lower space 90. The Bernoulli effect of this airflow creates a pressure drop in the lower space 90. As a result, the substrate 9 is attracted to the substrate holder 2. In other words, the air pressure in the lower space 90 becomes lower than the air pressure above the substrate 9 (i.e., it becomes negative). Due to the pressure difference between the upper and lower pressures, the substrate 9 is pressed against the plurality of support pins 22 of the substrate holder 2, thereby securing its position (i.e., maintaining its position).
[0030] When the substrate 9 is held on the substrate holder 2, the base 21, the central gas outlet 234, and the plurality of gas outlets 232 are spaced downward from the substrate 9 and are not in contact with the substrate 9. Furthermore, when the substrate 9 is not attracted to the substrate holder 2, the substrate 9 can easily move upward from the plurality of support pins 22, and can also move substantially horizontally while in contact with the plurality of support pins 22 (i.e., slide sideways on the plurality of support pins 22).
[0031] A plurality of rectifying protrusions 24 are arranged on the base surface 210 of the base portion 21, spaced apart from each other in the circumferential direction. The plurality of rectifying protrusions 24 are arranged circumferentially below the substrate 9, on a common circumference centered on the central axis J1. The plurality of rectifying protrusions 24 are arranged radially inward of the plurality of support pins 22, near the plurality of support pins 22. That is, the plurality of rectifying protrusions 24 are radially located between the plurality of support pins 22 and the plurality of gas outlets 232. The plurality of rectifying protrusions 24 are arranged at positions offset circumferentially from the plurality of support pins 22. In the example shown in FIG3 , two rectifying protrusions 24 are arranged near each support pin 22, with one support pin 22 circumferentially located between the two rectifying protrusions 24. In the example shown in FIG3 , the number of rectifying protrusions 24 is 60. The plurality of rectifying protrusions 24 are protrusions that project upward from the base surface 210. Each rectifying protrusion 24 is, for example, generally cylindrical in shape. The plurality of rectifying protrusions 24 are fixed to the base 21 and do not move relative to the base 21. The plurality of rectifying protrusions 24 rectify the gas flowing radially outward in the lower space 90.
[0032] In the substrate holding portion 2, a plurality of lifting pins and a plurality of centering pins (not shown) are provided on the base surface 210 of the base portion 21. These pins are located radially outward from the plurality of support pins 22. When a substrate 9 is unloaded from or loaded into the substrate processing apparatus 1, the lifting pins interact with the support pins 22 to transfer the substrate 9. The centering pins adjust the horizontal position of the substrate 9 by horizontally pushing the outer edge of the substrate 9, which is placed on the support pins 22 and not attracted to the substrate.
[0033] As shown in Figure 2, the substrate rotation mechanism 3 is disposed below the substrate holder 2. The substrate rotation mechanism 3 rotates the substrate 9 together with the substrate holder 2 about the central axis J1. In this embodiment, the substrate 9 and the substrate holder 2 rotate counterclockwise in Figure 3. The substrate rotation mechanism 3 includes a shaft 31 and a motor 32. The shaft 31 is a generally cylindrical member centered about the central axis J1. The shaft 31 extends vertically and is connected to the center portion of the lower surface of the base 21 of the substrate holder 2. The motor 32 is an electric rotary motor that rotates the shaft 31. Rotation of the shaft 31 by the motor 32 causes the base 21 connected to the shaft 31 to rotate together. Furthermore, the substrate rotation mechanism 3 may also include a motor having another structure (e.g., a hollow motor).
[0034] The shield portion 4 includes an annular shield 41 centered on the central axis J1. The shield 41 is positioned around the entire perimeter of the substrate 9 and the substrate holder 2, covering the sides of the substrate 9 and the substrate holder 2. The shield 41 serves as a liquid receiving container for processing liquid and other liquids scattered from the rotating substrate 9. The shield 41 remains stationary in the circumferential direction, regardless of whether the substrate holder 2 is rotating or stationary. A drain port (not shown) is provided at the bottom of the shield 41 to discharge the processing liquid and other liquids collected by the shield 41 to the outside of the chamber 11.
[0035] The shield 41 is moved vertically by a lifting mechanism (not shown). This lifting mechanism includes, for example, an electric linear motor, an air cylinder, or a ball screw and an electric rotary motor. The shield portion 4 may also include a plurality of shields 41 stacked radially. If the shield portion 4 includes a plurality of shields 41, each shield 41 can be independently moved vertically. Depending on the type of processing liquid scattered from the substrate 9, the shields 41 are switched to receive the processing liquid.
[0036] The processing liquid supply unit 51 supplies processing liquid (e.g., cleaning liquid) to the upper surface 91 of the substrate 9. The processing liquid supply unit 51 includes an upper nozzle 511 for spraying the processing liquid toward the upper surface 91 of the substrate 9. The upper nozzle 511 is, for example, a two-fluid nozzle that mixes the processing liquid with a gas and sprays the processing liquid toward the upper surface 91 of the substrate 9. In the processing liquid supply unit 51, the processing liquid is pulverized by colliding with the high-speed flow of the gas and is sprayed at high speed onto the upper surface 91 of the substrate 9 in a micronized state. In this way, the upper surface 91 of the substrate 9 is physically cleaned, and foreign matter attached to the upper surface 91 of the substrate 9 is removed. The processing liquid is, for example, DIW (Deionized Water) or CO2 water. The gas is, for example, an inert gas such as nitrogen, or air. The gas is, for example, a high-pressure gas or a compressed gas.
[0037] The processing unit movement mechanism 52 is a swing mechanism that swings the upper nozzle 511 of the processing liquid supply unit 51 approximately horizontally in the space above the substrate 9. The processing unit movement mechanism 52 comprises an arm 521 and an arm rotation mechanism 522. The arm 521 is a rod-shaped member extending approximately horizontally. The upper nozzle 511 is fixed to one end of the arm 521, and the other end is connected to the arm rotation mechanism 522 located radially outside the shield portion 4. The arm rotation mechanism 522 rotates the arm 521 approximately horizontally about a rotation axis extending in the vertical direction.
[0038] The processing unit moving mechanism 52 reciprocates the upper nozzle 511, which sprays the processing liquid onto the rotating substrate 9, between a first position and a second position. The first position is vertically opposed to the center of the upper surface 91 of the substrate 9, and the second position is located radially outward of the first position. The second position is preferably vertically opposed to the outer periphery of the upper surface 91 of the substrate 9. This allows the aforementioned physical cleaning process to be performed over substantially the entire upper surface 91 of the substrate 9. When the cleaning process is completed, the processing unit moving mechanism 52 moves the upper nozzle 511 of the processing liquid supply unit 51 from the space above the substrate 9 to a retracted position radially outward of the outer periphery of the substrate 9. The arm rotation mechanism 522 of the processing unit moving mechanism 52 comprises, for example, an electric rotary motor. The processing unit moving mechanism 52 may also have other structures.
[0039] As shown in Figure 4 , the base surface 210 of the base portion 21 extends generally horizontally radially outward from the central axis J1, forming an inclined surface that extends radially outward and upward below the outer periphery of the substrate 9. The base surface 210 extends radially outward from the plurality of support pins 22 and downward, forming a horizontal surface that extends generally horizontally from a position radially outward from the outer periphery of the substrate 9 when viewed from above. The base surface 210 extends radially outward and downward from the radially outer end of this horizontal surface.
[0040] As shown in Figures 3 and 4, the base surface 210 includes a first surface 211, a second surface 212, a third surface 213, a fourth surface 214, and a fifth surface 215. The first surface 211, the second surface 212, the third surface 213, the fourth surface 214, and the fifth surface 215 are arranged in order from the central axis J1 toward the radially outward direction. The first surface 211 is a generally circular surface centered on the central axis J1 and extending generally horizontally (i.e., generally perpendicular to the central axis J1). The first surface 211 is vertically opposed to the center portion of the substrate 9.
[0041] The second surface 212 is a generally annular surface located below the substrate 9 and extending radially outward from the generally circular outer edge of the first surface 211. The outer edge of the first surface 211 (i.e., the boundary between the first surface 211 and the second surface 212) overlaps with the substrate 9 when viewed from above. In the following description, "below the substrate 9" refers to a position that overlaps with the substrate 9 and is vertically below the lower surface 92 of the substrate 9 when viewed from above. The second surface 212 is an inclined surface that tilts upward as it moves radially outward from the outer edge of the first surface 211.
[0042] In the base portion 21 illustrated in FIG4 , the outer periphery of the second surface 212 is located at approximately the same radial position as the outer periphery of the substrate 9. The second surface 212 is substantially entirely located vertically below the lower surface 92 of the substrate 9. The second surface 212 has a substantially straight longitudinal cross-section, and its inclination angle (acute angle) relative to the horizontal is substantially constant. This inclination angle is, for example, 10° to 20°, and in the example shown in FIG4 , is approximately 15°. Furthermore, the second surface 212 may also be a curved surface that is convex upward, either entirely or partially.
[0043] The plurality of support pins 22 are disposed on the second surface 212. The plurality of support pins 22 are located slightly radially inward of the substantially circular outer periphery of the second surface 212 (i.e., the upper edge of the second surface 212) and protrude upward from the second surface 212. Furthermore, the plurality of gas outlets 232 are provided at the boundary between the second surface 212 and the first surface 211, or on the first surface 211 slightly radially inward of the boundary.
[0044] The third surface 213 is a generally annular surface located vertically below the lower surface 92 of the substrate 9 and continuous with the outer periphery of the second surface 212. As described above, the outer periphery of the second surface 212 (i.e., the boundary between the second surface 212 and the third surface 213) generally overlaps with the outer periphery of the substrate 9 when viewed from above. The third surface 213 is a surface that slopes downward as it moves radially outward from the outer periphery of the second surface 212. The longitudinal cross-section of the third surface 213 is generally linear, and the inclination angle (acute angle) of the third surface 213 relative to the horizontal direction is generally constant. Furthermore, the third surface 213 may be a curved surface that is convex upward, for example. Furthermore, the third surface 213 may extend generally vertically downward from the outer periphery of the second surface 212. In this case, the lower edge of the third surface 213 generally overlaps with the outer periphery of the substrate 9 when viewed from above.
[0045] The fourth surface 214 is a generally annular surface extending radially outward from the generally circumferential lower edge of the third surface 213. In the example shown in FIG4 , the fourth surface 214 extends generally horizontally from the lower edge of the third surface 213. The lower edge of the third surface 213 (i.e., the boundary between the third surface 213 and the fourth surface 214) is located radially outward relative to the outer circumference of the substrate 9. Alternatively, the fourth surface 214 may be a surface that slopes downward as it moves radially outward from the lower edge of the third surface 213.
[0046] The fifth surface 215 is a generally annular surface extending radially outward from the generally circular outer edge of the fourth surface 214. The outer edge of the fourth surface 214 (i.e., the boundary between the fourth surface 214 and the fifth surface 215) is located radially outward of the outer edge of the substrate 9. The fifth surface 215 is an inclined surface that slopes downward as it moves radially outward from the outer edge of the fourth surface 214. In the example shown in FIG4 , the longitudinal cross-section of the fifth surface 215 is generally linear, and the inclination angle (acute angle) of the fifth surface 215 relative to the horizontal direction is generally constant.
[0047] Figure 5 is an enlarged cross-sectional view showing the periphery of the base portion 21 in Figure 4 . As described above, in the substrate processing apparatus 1 , gas delivered from the central gas outlet 234 (see Figure 4 ) and the plurality of gas outlets 232 forms a radially outward flow in the lower space 90 from the radial center. Furthermore, the Bernoulli effect caused by this flow creates a pressure drop in the lower space 90 , attracting the substrate 9 to the substrate holding portion 2 . In Figure 5 , the arrows marked with the symbol 93 conceptually represent this flow. In the substrate processing apparatus 1 , the substrate 9 is rotated by the substrate rotating mechanism (see Figure 2 ), whereby the flow 93 is accelerated by centrifugal force. In other words, as the substrate 9 rotates, the radially outward flow velocity of the gas in the lower space 90 increases. In this embodiment, the rotational speed of the substrate 9 is, for example, 200 rpm to 1500 rpm. The flow rate of the gas supplied from the central gas outlet 234 and the plurality of gas outlets 232 to the lower space 90 is, for example, 270 L / min to 300 L / min.
[0048] Furthermore, in the substrate processing apparatus 1, the gas on the upper surface 91 of the substrate 9 is moved radially outward by the centrifugal force generated by the rotation of the substrate 9. This creates an airflow on the upper surface 91 of the substrate 9 that flows radially outward from the radial center. In Figure 5, the arrow labeled 94 conceptually represents this airflow. The airflow 94 flowing radially outward along the upper surface 91 of the substrate 9 flows radially outward from the outer periphery of the substrate 9, generating a Coanda effect between the airflow and the base surface 210. This causes the airflow to flow radially outward and downward along the base surface 210. This downward force acts on a portion near the outer periphery of the substrate 9, pressing the outer periphery of the substrate 9 against the plurality of support pins 22. As a result, the stability of the substrate 9 held by the substrate holder 2 is enhanced. In other words, in the substrate processing apparatus 1, the Bernoulli effect caused by the airflow 93 and the Coanda effect of the airflow 94 ensure that the substrate 9 is securely held by the substrate holder 2.
[0049] As described above, in the substrate processing apparatus 1, the processing liquid supplied to the upper surface 91 of the substrate 9 is moved radially outward by the centrifugal force generated by the rotation of the substrate 9, and is scattered radially outward from the outer periphery of the substrate 9. The negative pressure generated by the Bernoulli effect acts on the processing liquid near the outer periphery of the substrate 9, forcing it to flow back toward the lower surface 92 of the substrate 9. Meanwhile, the airflow 94 flowing from the outer periphery of the substrate 9 along the base surface 210 utilizing the Coanda effect also acts on the processing liquid near the outer periphery of the substrate 9, forcing it radially outward and downward from the outer periphery of the substrate 9. This prevents the processing liquid on the upper surface 91 of the substrate 9 from flowing back and adhering to the lower surface 92 of the substrate 9.
[0050] As described above, in the substrate holder 2, the second surface 212 of the base 21 is provided below the outer periphery of the substrate 9, with an inclined surface that slopes upward as it moves radially outward. This gradually decreases the vertical height of the lower space 90 below the outer periphery of the substrate 9, increasing the velocity of the airflow 93. This increases the Bernoulli effect's attraction force on the substrate 9 (i.e., the force that presses the substrate 9 against the plurality of support pins 22). Furthermore, since the vertical distance between the first surface 211 and the lower surface 92 of the substrate 9 is relatively large, the substrate 9 is prevented from being pushed upward by the gas discharged from the central gas outlet 234 (see FIG. 4 ) and the plurality of gas outlets 232.
[0051] By providing the substrate holder 2 with a third surface 213 extending downward from the outer periphery of the second surface 212, the force exerted by the Coanda effect on pressing the substrate 9 against the plurality of support pins 22 can be increased. Consequently, the stability of the substrate 9 can be improved. Furthermore, because the airflow 94 generated by the Coanda effect guides the processing liquid on the upper surface 91 of the substrate 9 downward from the outer periphery, it is possible to prevent the processing liquid from flowing back to the lower surface 92 (i.e., moving radially inward from the outer periphery of the substrate 9).
[0052] Figure 6 is an enlarged top view showing the vicinity of a support pin 22. As described above, two circumferentially adjacent rectifying protrusions 24 are disposed near the support pin 22, with the support pin 22 circumferentially positioned between the two rectifying protrusions 24. Since the substrate holder 2 rotates counterclockwise along with the substrate 9 when viewed from above, the left rectifying protrusion 24 in Figure 6 of the two rectifying protrusions 24 provided on the second surface 212 is located forward of the support pin 22 in the direction of rotation of the substrate 9. Furthermore, the right rectifying protrusion 24 in Figure 6 is located rearward of the support pin 22 in the direction of rotation of the substrate 9. In Figure 6, the substrate 9 is represented by a two-dot chain line.
[0053] The two rectifying protrusions 24 shown in FIG6 radially oppose two circumferentially adjacent gas outlets 232 among the plurality of gas outlets 232. Specifically, the rectifying protrusions 24 are located on the extension of an imaginary straight line connecting the central axis J1 and the center of one gas outlet 232 (i.e., the center of gravity of the gas outlet 232 when viewed from above). In the example shown in FIG6 , no other gas outlets 232 are disposed circumferentially between the two gas outlets 232 radially opposing the two rectifying protrusions 24. Furthermore, a plurality of gas outlets 232 are disposed circumferentially on either side of the two gas outlets 232 that do not radially oppose the rectifying protrusions 24.
[0054] As described above, the support pin 22 is positioned radially outward of the two adjacent rectifying protrusions 24, circumferentially between them. Specifically, the two circumferentially adjacent rectifying protrusions 24 are positioned at positions circumferentially offset from the support pin 22. In other words, no other rectifying protrusions 24 are positioned circumferentially between the two rectifying protrusions 24, and no rectifying protrusions 24 are positioned on the imaginary straight line connecting the central axis J1 and the center of the support pin 22 (i.e., the center of gravity of the support pin 22 when viewed from above). Furthermore, the two gas outlets 232, radially opposite the two rectifying protrusions 24, are also positioned circumferentially offset from the support pin 22.
[0055] In the example shown in Figure 6 , the angle θ between the two gas outlets 232 circumferentially opposite the two rectifying protrusions 24 (i.e., the angle θ formed by an imaginary line extending from one gas outlet 232 toward the central axis J1 and an imaginary line extending from the central axis J1 toward the other gas outlet 232) is 2.4°. Furthermore, the angle between the two rectifying protrusions 24 in a plan view is also substantially the same as the aforementioned angle θ. Furthermore, the angle between the support pin 22 and each of the two gas outlets 232 is 1.2°.
[0056] Figure 7 illustrates the flow of gas near a support pin 22. In Figure 7, the arrows marked with the symbol 95 conceptually represent the flow (i.e., airflow) of gas discharged from a gas outlet 232 radially opposite a rectifying protrusion 24. This airflow 95 flows toward one of the rectifying protrusions 24 radially opposite the gas outlet 232 and collides with the side of the rectifying protrusion 24. As a result, the flow direction of a portion of the gas discharged from the gas outlet 232 is changed so that it approaches the support pin 22 adjacent to the rectifying protrusion 24 (i.e., the support pin 22 circumferentially closest to the rectifying protrusion 24 among the plurality of support pins 22). Specifically, the portion of the airflow 95 that collides with the rectifying protrusion 24 located ahead of the substrate 9 in the rotational direction of the two rectifying protrusions 24 adjacent to the support pin 22 is redirected radially outward and behind the substrate 9 in the rotational direction. Furthermore, a portion of the airflow 95 that collides with the rectifying convex portion 24 located on the rear side of the substrate 9 in the rotation direction of the two rectifying convex portions 24 changes direction in a manner that is directed radially outward and in front of the substrate 9 in the rotation direction.
[0057] Figure 8 is a cross-sectional view of the substrate holding portion 2 taken along the line VIII-VIII in Figure 6 . In Figure 8 , a portion further inward than the cross-sectional view (i.e., the rectifying protrusion 24) is indicated by thin lines, while the substrate 9 supported by the support pins 22 is indicated by a two-dot chain line. The upper ends of the support pins 22 are in direct contact with the lower surface 92 of the substrate 9. On the other hand, because the upper ends of the rectifying protrusions 24 are located below the upper ends of the support pins 22, the rectifying protrusions 24 are spaced downward from the lower surface 92 of the substrate 9.
[0058] In the examples shown in Figures 6 to 8 , each rectifying protrusion 24 has an elliptical shape when viewed from above, and is a columnar portion extending approximately vertically upward from the base surface 210 of the base portion 21. The term "elliptical" herein encompasses concepts such as ellipses, oblongs (i.e., rounded rectangles consisting of two parallel lines of equal length and two semicircles connecting the ends of these two parallel lines), and egg shapes, and has mutually orthogonal major and minor axes. The major axis of an ellipse is defined as the line passing through the center of the ellipse and connecting two points on the outer periphery of the ellipse, with the longest distance between the two points. Furthermore, the minor axis of an ellipse is defined as the line passing through the center of the ellipse and connecting two points on the outer periphery of the ellipse, which is perpendicular to the major axis.
[0059] In the example shown in Figure 6 , the two rectifying protrusions 24 are roughly oval in shape when viewed from above. Therefore, the major axis 242 of the rectifying protrusion 24 is the straight line connecting the circumferential centers of the two semicircles located at the ends of the oval. Furthermore, the two rectifying protrusions 24 are roughly line-symmetrical with respect to an imaginary line connecting the central axis J1 and the center of the support pin 22 when viewed from above.
[0060] When viewed from above, the major axis 242 of the straightening protrusion 24 is tilted relative to the radial direction extending from the central axis J1 toward the center 241 of the straightening protrusion 24 (i.e., the center of gravity of the straightening protrusion 24 when viewed from above). In Figure 6 , an imaginary straight line R1 representing the radial direction and the major axis 242 of the straightening protrusion 24 are represented by a two-dot chain line. The radially outer end of the major axis 242 of the straightening protrusion 24 is circumferentially closer to the support pin 22 than the radially inner end of the major axis 242 (i.e., closest to the support pin 22 of the straightening protrusion 24). The tilt angle of the major axis 242 relative to the radial direction R1 ranges from 15° to 45°, for example, and is approximately 30° in the example shown in Figure 6 .
[0061] The area of the side surface of the rectifying protrusion 24 (a surface generally parallel to the vertical direction in the example shown in FIG8 ) that radially opposes the gas outlet 232 and the area adjacent thereto serve as a collision surface 244 against which the gas discharged from the gas outlet 232 collides. The collision surface 244 of each rectifying protrusion 24 is inclined relative to a radial direction R1 extending from the central axis J1 toward the center 241 of the rectifying protrusion 24, so as to face the support pin 22 or the area 96 radially outward of the support pin 22. Specifically, in a plan view, a tangent line L1 to the collision surface 244 at the intersection of the minor axis 243 of the rectifying protrusion 24 and the collision surface 244 of the rectifying protrusion 24 extends from the intersection toward the support pin 22 or the area 96 radially outward of the support pin 22.
[0062] Furthermore, the region 96 radially outside the support pin 22 refers to the region located on the opposite side of the central axis J1, across the support pin 22, and inward of the outer periphery of the substrate 9, in the radial direction passing through the central axis J1 and the center of the support pin 22. This region 96 extends circumferentially from one end of the support pin 22 to the other. In Figures 6 and 7 , this region 96 is marked with parallel oblique lines.
[0063] Thus, by tilting the collision surface 244 of the rectifying protrusion 24 relative to the radial direction R1, as shown in Figure 7 , the radially outward-directed gas flow 95 from the gas outlet 232 collides with the collision surface 244 of the rectifying protrusion 24 and changes direction. A portion of the gas flow 95 then flows toward the support pins 22 adjacent to the rectifying protrusion 24 and / or the radially outward region 96 of the support pins 22. Consequently, the flow of gas directed radially outward below the substrate 9 in the radially outward region 96 of the support pins 22 becomes stronger. In other words, the component of the gas flow directed radially outward below the substrate 9 in the radially outward region 96 of the support pins 22 increases. As a result, the processing liquid supplied to the upper surface 91 of the substrate 9 is prevented from flowing back toward the lower surface 92 of the substrate 9 in the radially outward region 96 of the support pins 22. In the example shown in FIG. 7 , the airflow 95 that collides with the collision surface 244 of the rectifying protrusion 24 mainly flows toward the radially outer region 96 of the support pin 22 adjacent to the rectifying protrusion 24 .
[0064] Furthermore, compared with the case where the rectifying protrusion 24 is not provided, the flow of the gas toward the radial outside in the area adjacent to the radial outside of the rectifying protrusion 24 becomes weaker to a certain extent, but since the rectifying protrusion 24 moves away from the outer periphery of the substrate 9 radially further inward than the supporting pin 22, the backflow of the processing liquid from the radial outside of the rectifying protrusion 24 to the side of the lower surface 92 of the substrate 9 will hardly increase.
[0065] FIG9 is a diagram showing the flow of gas near a support pin 22 in the substrate holder 2 holding the substrate 9, obtained through CFD (Computational Fluid Dynamics) simulation. FIG10 is a diagram showing the flow of gas near a support pin 22 in a substrate holder of a comparative example, in which the rectifying protrusion 24 is omitted, obtained through CFD simulation. This CFD simulation was performed using Ansys Fluent, manufactured by Ansys, with the rotation speed of the substrate 9 set to 1500 rpm and the gas supply flow rate from the gas supply unit 23 to the lower space 90 (see FIG4 ) set to 300 L / min. In FIG9 and FIG10 , the substrate 9 is omitted from illustration, and the gas flow path 231 of the gas supply unit 23 is simulated using a pipe.
[0066] As shown in Figure 10 , in the substrate holding portion of the comparative example, the gas flow in the region 96 radially outward of the support pins 22 is approximately parallel in the circumferential direction, with almost no radially outward flow. Therefore, in the region 96 radially outward of the support pins 22, backflow of the processing liquid toward the lower surface 92 of the substrate 9 is relatively easy to occur, and the backflow length of the processing liquid at the lower surface 92 of the substrate 9 (i.e., the radial distance between the radially inner end of the processing liquid flowing back to the lower surface 92 of the substrate 9 and the outer circumferential edge of the substrate 9) is increased. In contrast, in the substrate holding portion 2 shown in Figure 9 , the radially outward gas flow in the region 96 radially outward of the support pins 22 is stronger than in the substrate holding portion of the comparative example. Therefore, in the region 96 radially outward of the support pins 22, backflow of the processing liquid toward the lower surface 92 of the substrate 9 is suppressed, and the backflow length of the processing liquid at the lower surface 92 of the substrate 9 is reduced.
[0067] In the substrate processing apparatus 1 described above, as shown in FIG6 , two rectifying protrusions 24 are disposed adjacent to a support pin 22 and on both circumferential sides of the support pin 22, but this is not limiting. For example, only one of the two rectifying protrusions 24 may be provided, while the other may be omitted. In other words, the number of rectifying protrusions 24 disposed per support pin 22 may be one. In this case, when only one rectifying protrusion 24 corresponds to a support pin 22, the rectifying protrusion 24 is preferably located forward of the support pin 22 in the rotational direction of the substrate 9 (i.e., to the left in FIG6 ). Since gas from the gas outlet 232 that strikes the rectifying protrusion 24 tends to flow backward in the rotational direction due to the rotation of the substrate 9, arranging the rectifying protrusion 24 forward of the support pin 22 in the rotational direction facilitates directing the gas toward the support pin 22 or toward the region 96 radially outward of the support pin 22. As a result, the flow rate of the gas directed radially outward can be easily increased in the region 96 radially outward of the support pin 22, thereby effectively suppressing the backflow of the processing liquid toward the lower surface 92 of the substrate 9. Furthermore, the number of rectifying protrusions 24 provided for each support pin 22 can be appropriately varied within a range of two or more.
[0068] As described above, the substrate processing apparatus 1 for processing a substrate 9 includes a substrate holding portion 2, a substrate rotating mechanism 3, and a processing liquid supply portion 51. The substrate holding portion 2 holds the substrate 9 in a horizontal position. The substrate rotating mechanism 3 rotates the substrate holding portion 2 about a central axis J1 extending in the vertical direction. The processing liquid supply portion 51 supplies processing liquid to the upper surface 91 of the substrate 9. The substrate holding portion 2 includes a base portion 21, a plurality of support pins 22, a gas supply portion 23, and a plurality of rectifying protrusions 24. The base portion 21 has a base surface 210 facing the lower surface 92 of the substrate 9. The plurality of support pins 22 are arranged circumferentially on the base surface 210. The plurality of support pins 22 protrude upward from the base surface 210 and contact the outer periphery of the lower surface 92 of the substrate 9. The gas supply unit 23 supplies gas between the lower surface 92 of the substrate 9 and the base surface 210 of the base portion 21, forming a radially outward gas flow 93. This creates a pressure drop in the space between the substrate 9 and the base portion 21 (i.e., the lower space 90) through the Bernoulli effect. A plurality of rectifying protrusions 24 are circumferentially arranged on the base surface 210, radially inward of the plurality of support pins 22, and protrude upward from the base surface 210.
[0069] The gas supply portion 23 includes a plurality of gas outlets 232. The plurality of gas outlets 232 are circumferentially arranged on the base surface 210, radially inward of the plurality of rectifying protrusions 24. The plurality of gas outlets 232 discharge gas supplied from the gas supply source radially outward. The plurality of gas outlets 232 and the plurality of rectifying protrusions 24 are respectively arranged at positions circumferentially offset from the plurality of support pins 22. One of the plurality of rectifying protrusions 24 radially opposes one of the plurality of gas outlets 232. Gas discharged from the gas outlet 232 collides with the rectifying protrusion 24. As a result, the flow direction of the gas is changed so that it approaches the support pin 22 circumferentially closest to the rectifying protrusion 24.
[0070] As a result, as described above, the flow rate of the gas directed radially outward from below the substrate 9 can be increased in the radially outer region 96 of the support pins 22. Consequently, backflow of the processing liquid in the radially outer region 96 of the support pins 22 toward the lower surface 92 of the substrate 9 can be suppressed. Consequently, the quality of the liquid processing on the substrate 9 can be improved.
[0071] As described above, a rectifying protrusion 24 preferably includes a collision surface 244 against which gas discharged from a gas outlet 232 collides. Furthermore, the collision surface 244 is preferably inclined relative to the radial direction R1 from the central axis J1 toward the center 241 of the rectifying protrusion 24, so as to be directed toward a support pin 22 or a region 96 radially outward of the support pin 22. This effectively directs the gas discharged from the gas outlet 232 toward the rectifying protrusion 24 toward the support pin 22 or the region 96 radially outward of the support pin 22. As a result, the flow rate of the gas directed radially outward in the region 96 radially outward of the support pin 22 can be further increased, thereby further suppressing backflow of the processing liquid toward the lower surface 92 of the substrate 9.
[0072] As described above, the straightening protrusion 24 is preferably cylindrical, extending upward from the base surface 210. This makes it easier to change the flow direction of the gas from the gas outlet 232 when viewed from above, compared to a case where the straightening protrusion 24 is hemispherical. Furthermore, the straightening protrusion 24 is preferably elliptical when viewed from above, with a major axis 242 tilted radially. The radially outer end of the major axis 242 is preferably circumferentially closer to the support pin 22 than the radially inner end. This reduces the reduction in gas flow velocity caused by collision with the straightening protrusion 24, compared to a case where the straightening protrusion 24 is a columnar shape with corners (e.g., a square prism or a flat plate). As a result, the radially outward flow velocity of the gas can be further increased in the region 96 radially outside the support pin 22, thereby further suppressing backflow of the processing liquid toward the lower surface 92 of the substrate 9.
[0073] As described above, the columnar, elliptical-shaped rectifying protrusion 24 preferably includes a collision surface 244 against which the gas discharged from the gas outlet 232 collides. Furthermore, when viewed from above, a tangent line L1 to the collision surface 244 at the intersection of the minor axis 243 of the rectifying protrusion 24 and the collision surface 244 preferably faces a support pin 22 or a radially outward region 96 of the support pin 22. Thus, the collision surface 244 of the rectifying protrusion 24 extends a relatively long distance toward the support pin 22 or the radially outward region 96 of the support pin 22. Therefore, the gas discharged from the gas outlet 232 toward the rectifying protrusion 24 can be effectively directed toward the support pin 22 or the radially outward region 96 of the support pin 22. As a result, the flow rate of the gas directed radially outward in the radially outward region 96 of the support pin 22 can be further increased, thereby further suppressing backflow of the processing liquid toward the lower surface 92 of the substrate 9.
[0074] As described above, the plurality of rectifying protrusions 24 are preferably spaced downward from the lower surface 92 of the substrate 9. This prevents the contact area between the substrate holder 2 and the lower surface 92 of the substrate 9 from increasing. As a result, any adverse effects on the substrate 9 caused by contact with the substrate holder 2 can be suppressed.
[0075] As described above, the rectifying protrusion 24 is preferably located on the front side of the support pin 22 in the rotational direction of the substrate 9. This facilitates increasing the radially outward flow rate of the gas in the region 96 radially outward of the support pin 22, thereby effectively suppressing backflow of the processing liquid toward the lower surface 92 of the substrate 9.
[0076] As described above, a support pin 22 is preferably located circumferentially between a rectifying protrusion 24 and another rectifying protrusion 24. Furthermore, the other rectifying protrusion 24 is preferably radially opposed to another gas outlet 232 among the plurality of gas outlets 232, different from the one gas outlet 232. As the gas discharged from the other gas outlet 232 collides with the other rectifying protrusion 24, the flow direction of the gas is changed so that it approaches the support pin. This further increases the radially outward flow velocity of the gas in the region 96 radially outside the support pin 22, thereby further suppressing backflow of the processing liquid toward the lower surface 92 of the substrate 9.
[0077] The substrate processing apparatus 1 described above can be modified in various ways.
[0078] For example, the direction of the rectifying protrusion 24 is not limited to the above example and can be modified in various ways. Furthermore, the shape of the rectifying protrusion 24 is not limited to the above example and can be modified in various ways. For example, the shape of the rectifying protrusion 24 when viewed from above is not necessarily a roughly oval shape and can be an ellipse other than an oval shape (for example, an ellipse or an egg shape). Furthermore, the shape of the rectifying protrusion 24 when viewed from above is not necessarily an ellipse. For example, a rectifying protrusion 24 that is roughly cylindrical, roughly triangular, roughly quadrangular, or roughly flat and protrudes upward from the base surface 210 can also be provided on the substrate retaining portion 2. The rectifying protrusion 24 is not necessarily cylindrical and can be roughly hemispherical or roughly hemispherical. The rectifying protrusion 24 may not have a surface that can be clearly defined as the collision surface 244. The upper end of the rectifying protrusion 24 may also contact the lower surface 92 of the substrate 9.
[0079] In the substrate processing apparatus 1 , the number of the rectifying protrusions 24 can be varied in various ways. If only one rectifying protrusion 24 corresponds to one support pin 22 , the rectifying protrusion 24 can be located behind the support pin 22 in the rotational direction of the substrate 9 . Furthermore, in the substrate processing apparatus 1 , the number, shape, and arrangement of the support pins 22 , as well as the number, shape, and arrangement of the gas outlets 232 , are not limited to the examples described above and can be varied in various ways.
[0080] The shape of the base portion 21 is not limited to the above example and can be modified in various ways. For example, the area near the outer periphery of the second surface 212 may be a horizontal plane approximately perpendicular to the central axis J1. In this case, the plurality of support pins 22 may be arranged on this horizontal plane. Furthermore, the third surface 213 may be continuous with the outer periphery of the second surface 212 radially outward from the outer periphery of the substrate 9. The fourth surface 214 may expand upward or downward as it moves radially outward from the lower edge of the third surface 213. Furthermore, the base surface 210 may not include the fifth surface 215.
[0081] The upper nozzle 511 of the processing liquid supply part 51 can also be fixed above the central part of the substrate 9 to supply the processing liquid to the upper surface 91 of the substrate 9.
[0082] In the above example, the thickness of the substrate 9 processed by the substrate processing apparatus 1 is substantially uniform across substantially the entire surface in the vertical direction, but this is not limiting. For example, the substrate 9 may have a peripheral portion that is thicker than a region further inward from the peripheral portion (hereinafter referred to as the "main portion"). On the upper surface 91 of the substrate 9, for example, the main portion is recessed downward relative to the peripheral portion. The substrate 9 is formed, for example, by grinding (i.e., polishing) a portion of the substrate corresponding to the main portion while maintaining a substantially uniform thickness.
[0083] In addition to semiconductor substrates, the substrate processing apparatus 1 can also be used to process glass substrates used in flat panel displays (FPDs), such as liquid crystal displays (LCDs) and organic EL (electroluminescence) displays, or other glass substrates used in other display devices. Furthermore, the substrate processing apparatus 1 can also be used to process optical disc substrates, magnetic disc substrates, magneto-optical disc substrates, photomask substrates, ceramic substrates, and solar cell substrates.
[0084] The configurations of the above-mentioned embodiments and variations can be appropriately combined as long as they do not contradict each other.
[0085] Although the invention has been described and illustrated in detail, the above description is illustrative and not restrictive. Therefore, it can be said that various changes and modifications can be implemented without departing from the scope of the invention.
[0086] 1: Substrate processing equipment 2: Substrate holding part 3: Substrate rotation mechanism 4: Shield 9:Substrate 10: Substrate processing system 11: Chamber 12: Airflow formation part 21: Base 22: Support pin 23: Gas supply unit 24: Rectifying convex part 31: Axis 32: Motor 41: Shield 51: Treatment liquid supply unit 52: Processing unit moving mechanism 90: Space below 91: Upper surface (of substrate) 92: Lower surface (of substrate) 93: Airflow (symbol) 94: Airflow (symbol) 95: Airflow (symbol) 96: Area (radially outside the support pin) 101: Loading Blocks 102: Processing block 104: Carrier holding unit 105: Loading Robot 106:IR moving mechanism 107: Vehicle 108: Processing unit 109:Central Robot 210: base surface 211: Page 1 212: Page 2 213: Page 3 214: Page 4 215: Page 5 231: Gas flow path 232: Gas outlet 233: Gas flow path 234: Central gas outlet 241: Center (of the rectifier convex part) 242: (rectifying convex part) long axis 243: (rectifier convex part) short axis 244:Collision surface 511: Upper nozzle 521: Arm 522: Arm rotation mechanism J1: Center axis L1: Tangent R1: Radial (imaginary straight line) θ: angle
Claims
1. A substrate processing apparatus for processing a substrate, comprising: a substrate holding portion for holding the substrate in a horizontal state; a substrate rotating mechanism for rotating the substrate holding portion about a central axis in the vertical direction; and a processing liquid supply portion for supplying processing liquid to the upper surface of the substrate; wherein the substrate holding portion comprises: a base portion having a base surface facing the lower surface of the substrate; and a plurality of support pins arranged circumferentially on the base surface and protruding upward from the base surface to contact the outer periphery of the lower surface of the substrate. A gas supply section supplies gas between the lower surface of the substrate and the base surface of the base portion, forming an airflow directed radially outward, thereby generating a pressure drop in the space between the substrate and the base portion due to the Bernoulli effect; and a plurality of rectifying protrusions arranged circumferentially on the base surface further radially inward than the plurality of support pins, and protruding upward from the base surface; the gas supply section also includes a plurality of gas outlets arranged circumferentially on the base surface further radially inward than the plurality of rectifying protrusions, and discharging gas supplied from the gas supply source radially outward. The plurality of gas outlets and the plurality of rectifying protrusions are respectively disposed at positions circumferentially offset from the plurality of support pins, and one of the rectifying protrusions and one of the gas outlets face each other radially. By colliding with the rectification protrusion, the gas flow direction of the gas is changed in such a way that it approaches the support pin that is closest to the rectification protrusion in the circumferential direction among the plurality of support pins.
2. The substrate processing apparatus of claim 1, wherein the rectifying protrusion has a collision surface for collision with gas delivered from the gas outlet, the collision surface being inclined relative to the radial direction from the central axis toward the center of the rectifying protrusion toward the region radially outward of the support pin or the support pin.
3. The substrate processing apparatus of claim 1, wherein the rectifier protrusion is a column extending upward from the base surface, and the shape of the rectifier protrusion in plan view is an ellipse having a major axis inclined relative to the radial direction, wherein the outer radial end of the major axis is closer to the support pin in the circumferential direction than the inner radial end.
4. The substrate processing apparatus of claim 3, wherein the rectifying protrusion has a collision surface for collision with gas delivered from the gas outlet, and in plan view, the tangent of the collision surface at the intersection of the minor axis of the rectifying protrusion and the collision surface is directed toward the region radially outward of the support pin or the support pin.
5. The substrate processing apparatus of claim 1, wherein the plurality of rectifier protrusions move downward from the lower surface of the substrate.
6. The substrate processing apparatus of claim 1, wherein the rectifier protrusion is located in front of the substrate in the rotation direction relative to the support pin.
7. A substrate processing apparatus according to any one of claims 1 to 6, wherein the support pin is located circumferentially between the rectification protrusion and other rectification protrusions, the other rectification protrusions and other gas outlets among the plurality of gas outlets that are different from the gas outlet are radially opposed, and the flow direction of the gas is changed by the collision of gas delivered from the other gas outlets with the other rectification protrusions in a manner that approaches the support pin.