Substrate processing apparatus, substrate processing method, semiconductor device manufacturing method, and computer-readable recording medium
Patent Information
- Authority / Receiving Office
- TW · TW
- Patent Type
- Patents
- Current Assignee / Owner
- KOKUSAI DENKI KK
- Filing Date
- 2024-06-17
- Publication Date
- 2026-08-01
Smart Images
Figure TWG2TB001903568_001 
Figure TWG2TB001903568_002 
Figure TWG2TB001903568_003
Abstract
Description
Technical Field
[0001] The present disclosure relates to a substrate processing device, a substrate processing method, a method for manufacturing a semiconductor device, and a program. Prior Art
[0002] As one of the manufacturing processes of semiconductor devices (semiconductor elements), there is a modification process represented by annealing, for example, in which a substrate in a processing chamber is heated using a heating device to change the composition or crystal structure of a thin film formed on the surface of the substrate, or to repair crystal defects in the formed thin film. As a modification process method, a heat treatment method using electromagnetic waves, such as that shown in Patent Document 1, has been studied. [Prior Technical Literature] Patent Literature Patent Document 1: Japanese Patent Application Publication No. 2015-070045 Summary of the invention
[0003] [Problems to be solved by the invention] In conventional treatment using electromagnetic waves, heat diffusion may occur from a film to be treated to films other than the film to be treated due to heat treatment. The present disclosure provides a technology capable of suppressing heat diffusion. [Means for solving technical problems] According to one embodiment of the present disclosure, the following technology is provided, comprising: a processing chamber, which processes a substrate formed with a first film to which a dopant is added and a second film different from the first film; an electromagnetic wave supply unit, which supplies electromagnetic waves to the substrate; and a control unit, which is configured to control the electromagnetic wave supply unit so that the supply of the electromagnetic wave is stopped before the second film is heated while the dopant is heated by the electromagnetic wave. [Effects of the Invention] According to the present disclosure, heat diffusion can be suppressed. Simple diagram description
[0004] FIG. 1 is a schematic diagram showing a longitudinal cross-sectional view of a processing furnace portion of a substrate processing apparatus as one embodiment of the present disclosure. FIG. 2 is a longitudinal sectional view showing a schematic structure of a substrate processing apparatus as one embodiment of the present disclosure at the position of a processing furnace. FIG. 3 is a transverse sectional view showing a cross-sectional structure of a substrate processing apparatus according to one embodiment of the present disclosure. [ FIG. 4 ] is a schematic structural diagram of a controller of a substrate processing apparatus as one embodiment of the present disclosure. FIG. 5 is a diagram showing an example of a waveform of a microwave power source subjected to pulse control applicable to an embodiment of the present disclosure. [ Fig. 6 ] is a diagram showing an example of the setting of a microwave power source preferably used in the embodiment of the present disclosure. [ Fig. 7 ] is a diagram showing an example of a process of substrate processing as one embodiment of the present disclosure. [ Fig. 8 ] is a cross-sectional view showing the structure of a film applied to a substrate according to an embodiment of the present disclosure. [Fig. 9] is a diagram showing a reaction model in the film to be treated shown in Fig. 8. Implementation
[0005] Hereinafter, one mode of the present disclosure will be described with reference to the accompanying drawings. In addition, the drawings used in the following description are all schematic, and the relationship between the dimensions of the elements shown in the drawings, the ratio of the elements, etc. may not be consistent with the actual situation. In addition, the relationship between the dimensions of the elements, the ratio of the elements, etc. may not be consistent between multiple drawings. In addition, in multiple drawings, substantially the same elements are marked with the same figure numbers, and the elements are described in the drawings where they first appear, and their descriptions are omitted in subsequent drawings unless otherwise required. Unless otherwise specified in the specification, each element is not limited to one, and multiple elements may exist. (1) Structure of substrate processing apparatus The substrate processing device in this embodiment is configured as a single-wafer heat treatment device that performs various heat treatments on one or more wafers as substrates, and is described as a device that performs an annealing process (modification process) using electromagnetic waves described later. In the substrate processing device in this embodiment, a FOUP (Front Opening Unified Pod: hereinafter referred to as a wafer box) is used as a storage container (carrier) that accommodates wafers in a processing chamber. The wafer box is also used as a transport container for transporting wafers between various substrate processing devices. As shown in Fig. 1, Fig. 2 and Fig. 3, the substrate processing device 100 comprises: a conveying housing 202, which has a conveying chamber 203 inside for conveying wafers 200; and housings 102-1 and 102-2 as processing containers described later, which are arranged on the side walls of the conveying housing 202 and have processing chambers 201-1 and 201-2 inside for processing wafers 200. In addition, a cooling housing 109 forming a cooling chamber 204 is arranged between the processing chambers 201-1 and 201-2. On the front side of the transport housing 202, i.e., toward the right side of FIG. 2 (toward the lower side of FIG. 3), a loading port unit (LP) 106 as a wafer box opening and closing mechanism for opening and closing the cover of the wafer box 110 and carrying the wafer 200 into / out of the transport chamber 203 is arranged. The loading port unit 106 includes a housing 106a, a mounting table 106b, and an opener 106c. The mounting table 106b is configured to mount the wafer box 110 so that the wafer box 110 is close to the substrate carrying in and out port 134 formed in front of the housing of the transport chamber 203, and the cover (not shown) provided on the wafer box 110 is opened and closed by the opener 106c. In addition, the loading port unit 106 may also have a function of purging the inside of the wafer box 110 with a purge gas such as N2 gas. In addition, the transport housing 202 has a purge gas circulation structure described later for circulating a purge gas such as N2 in the transport chamber 203. Gate valves (GV) 205-1 and 205-2 for opening and closing the processing chambers 201-1 and 201-2 are respectively arranged on the rear side of the conveying housing 202, that is, toward the left side of FIG. 2 (toward the upper side of FIG. 3). A substrate transfer robot as a substrate transfer mechanism for transferring the wafer 200 and a transfer machine 125 as a substrate conveying unit are provided in the conveying chamber 203. The transfer machine 125 is composed of: tweezers (arms) 125a-1 and 125a-2 as a loading unit for loading the wafer 200; a transfer device 125b that can rotate or linearly move the tweezers 125a-1 and 125a-2 in the horizontal direction; and a transfer device elevator 125c that lifts and lowers the transfer device 125b. By continuously operating the tweezers 125a-1, 125a-2, the transfer device 125b, and the transfer device elevator 125c, the wafer 200 can be loaded (charged) or unloaded (unloaded) to the substrate holder (substrate holding portion) 217, the cooling chamber 204, or the wafer box 110 described later. Hereinafter, when no special distinction is required, the housing 102-1, the housing 102-2, the processing chamber 201-1, the processing chamber 201-2, the tweezers 125a-1, and the tweezers 125a-2 are respectively described as the housing 102, the processing chamber 201, and the tweezers 125a. The tweezers 125a-1 are made of ordinary aluminum and are used for conveying wafers at low temperatures and normal temperatures. The tweezers 125a-2 are made of materials such as alumina or quartz components with high heat resistance and poor thermal conductivity and are used for conveying wafers at high temperatures and normal temperatures. That is, the tweezers 125a-1 is a substrate conveying unit for low temperatures, and the tweezers 125a-2 is a substrate conveying unit for high temperatures. The tweezers 125a-2 for high temperatures are preferably configured to have a heat resistance of, for example, 100°C or more, more preferably 200°C or more. A mapping sensor can be provided on the tweezers 125a-1 for low temperatures. By providing a mapping sensor on the tweezers 125a-1 for low temperatures, it is possible to confirm the number of wafers 200 in the loading port unit 106, the number of wafers 200 in the processing chamber 201, and the number of wafers 200 in the cooling chamber 204. In the substrate processing apparatus of this embodiment, although the tweezers 125a-1 are described as low-temperature tweezers and the tweezers 125a-2 are described as high-temperature tweezers, the present invention is not limited thereto. Alternatively, the tweezers 125a-1 may be made of a material such as alumina or quartz components with high heat resistance and poor thermal conductivity, and used for conveying high-temperature and normal-temperature wafers, and the tweezers 125a-2 may be made of a common aluminum material, and used for conveying low-temperature and normal-temperature wafers. Alternatively, both the tweezers 125a-1 and 125a-2 may be made of a material such as alumina or quartz components with high heat resistance and poor thermal conductivity. (Treatment furnace) A processing furnace (processing chamber 201) having the substrate processing structure shown in Fig. 1 is formed in the area A surrounded by the dotted line in Fig. 2. As shown in Fig. 3, although a plurality of processing furnaces are provided in this embodiment, the structures of the processing furnaces are the same, and therefore only one structure is described, and the description of the structures of the other processing furnaces is omitted. As shown in FIG. 1 , the processing furnace has a shell 102 as a cavity (processing container) made of a material such as metal that reflects electromagnetic waves. In addition, a cover flange (closing plate) 104 made of a metal material is configured to close the upper end of the shell 102 via an O-ring as a sealing member that is omitted from the figure. The inner space of the shell 102 and the cover flange 104 is mainly configured as a processing chamber 201 for processing the wafer 200. A reaction tube made of quartz (not shown) that allows electromagnetic waves to pass may be provided inside the shell 102, and the processing container may be configured in such a way that the inside of the reaction tube becomes a processing chamber. In addition, the cover flange 104 may not be provided, and the processing chamber 201 may be configured using the shell 102 with a closed ceiling. A stage 210 is provided in the processing chamber 201, and a wafer boat 217 as a substrate holder (substrate holding part) for holding a wafer 200 is placed on the upper surface of the stage 210. The wafer 200 to be processed and the susceptors 103a and 103b placed vertically below the wafer 200 in a manner of sandwiching the wafer 200 are held at a predetermined interval on the wafer boat 217. The susceptors 103a and 103b are arranged above and below the wafer 200, for example, as a silicon plate (Si plate) or a silicon carbide plate (SiC plate), thereby suppressing the concentration of electric field intensity on the edge of the wafer 200. That is, the susceptor suppresses the absorption of electromagnetic waves on the edge of the wafer. In addition, quartz plates 101a and 101b as heat insulation plates may be held at a predetermined interval on the upper and lower surfaces of the susceptors 103a and 103b. In this embodiment, the quartz plates 101a and 101b are each formed of the same member, and the susceptors 103a and 103b are each formed of the same member. Hereinafter, when there is no need to distinguish them, they are referred to as the quartz plates 101 and the susceptors 103. The wafer boat 217 can hold a plurality of wafers 200. Thus, the processing capacity is improved. The shell 102 as a processing container is, for example, circular in cross section and is configured as a flat closed container. In addition, the transport shell 202 as a lower container is, for example, made of a metal material such as aluminum (Al) or stainless steel (SUS) or quartz. In addition, sometimes the space surrounded by the shell 102 is also referred to as a processing chamber (or reaction area) 201 as a processing space, and the space surrounded by the transport shell 202 is also referred to as a transport chamber (or transport area) 203 as a transport space. In addition, the processing chamber 201 and the transport chamber 203 are not limited to being adjacent in the horizontal direction as in the present embodiment, but can also be set to be adjacent in the vertical direction to raise and lower a substrate holder having a predetermined structure. As shown in Fig. 1, Fig. 2 and Fig. 3, a substrate loading port 206 adjacent to the gate valve 205 is provided on the side of the transport housing 202, and the wafer 200 moves between the processing chamber 201 and the transport chamber 203 via the substrate loading port 206. A choke structure having a length of 1 / 4 wavelength of the electromagnetic wave used is provided around the gate valve 205 or the substrate loading port 206 as a countermeasure against leakage of the electromagnetic wave described later. An electromagnetic wave supply unit as a heating device, which will be described in detail later, is provided on the side of the housing 102. Electromagnetic waves such as microwaves supplied from the electromagnetic wave supply unit are introduced into the processing chamber 201 to heat the wafer 200 and process the wafer 200. The electromagnetic wave supply unit is provided at a position opposite to the substrate loading and unloading port 206. The mounting table 210 is supported by a shaft 255 as a rotation axis. The shaft 255 passes through the bottom of the processing chamber 201 and is connected to a driving mechanism 267 that performs a rotational motion outside the processing chamber 201. By operating the driving mechanism 267 to rotate the shaft 255 and the mounting table 210, the wafer 200 placed on the wafer boat 217 can be rotated. In addition, the periphery of the lower end of the shaft 255 is covered by a bellows 212, and the processing chamber 201 and the conveying area 203 are kept airtight. Here, the mounting table 210 can also be constructed to rise or fall through the driving mechanism 267 according to the height of the substrate loading and unloading port 206 when conveying the wafer 200 so that the wafer 200 is in the wafer conveying position, and to rise or fall to the wafer 200 in the processing position (wafer processing position) in the processing chamber 201 when processing the wafer 200. An exhaust unit for exhausting the atmosphere of the processing chamber 201 is provided below the processing chamber 201 and on the outer peripheral side of the mounting table 210. As shown in FIG1 , the exhaust unit is provided with an exhaust port 221. An exhaust pipe 231 is connected to the exhaust port 221, and a pressure regulator 244 such as an APC valve that controls the valve opening according to the pressure in the processing chamber 201 and a vacuum pump 246 are sequentially connected in series to the exhaust pipe 231. Here, as long as the pressure regulator 244 can receive the pressure information in the processing chamber 201 and the feedback signal from the pressure sensor 245 described later to adjust the exhaust volume, it is not limited to the APC valve, and can also be constructed to use a normal on-off valve and a pressure regulating valve. The exhaust port 221, the exhaust pipe 231, and the pressure regulator 244 constitute an exhaust unit (also referred to as an exhaust system or an exhaust line). In addition, the exhaust port may be provided in a manner surrounding the mounting table 210 so that gas can be exhausted from the entire periphery of the wafer 200. In addition, the vacuum pump 246 may be included in the structure of the exhaust unit. The cover flange 104 is provided with a gas supply pipe 232 for supplying various processing gases for substrate processing, such as an inert gas, a source gas, and a reaction gas, into the processing chamber 201 . The gas supply pipe 232 is provided with a mass flow controller (MFC) 241 which is a flow controller (flow control unit) and a valve 243 which is an opening and closing valve in order from the upstream. A gas source such as nitrogen (N2), which is an inert gas, is connected to the upstream side of the gas supply pipe 232 and is supplied to the processing chamber 201 via the MFC 241 and the valve 243. The gas supply system is mainly composed of the gas supply pipe 232, the MFC 241, and the valve 243. The gas supply system may also include a gas source. When multiple types of gases are used in substrate processing, multiple types of gases can be supplied by using a structure in which a gas supply pipe having an MFC as a flow controller and a valve as an opening and closing valve sequentially arranged from the upstream side is connected to a position downstream of the valve 243 of the gas supply pipe 232. A gas supply pipe provided with an MFC and a valve may also be provided for each type of gas. The gas supply system (gas supply unit) is mainly composed of the gas supply pipe 232, the MFC 241, and the valve 243. When an inert gas is made to flow through the gas supply system, it is also referred to as an inert gas supply system. A temperature sensor 263 as a non-contact temperature measuring device is provided on the cover flange 104. The output of a microwave oscillator 655 described later is adjusted based on the temperature information detected by the temperature sensor 263, thereby heating the substrate so that the substrate temperature has a desired temperature distribution. The temperature sensor 263 is composed of, for example, a radiation thermometer such as an IR (Infrared Radiation) sensor. The temperature sensor 263 is configured to measure the surface temperature of the quartz plate 101a or the surface temperature of the wafer 200. In the case where a susceptor as the aforementioned heating element is provided, it can also be configured to measure the surface temperature of the susceptor. In addition, in this embodiment, the case recorded as the temperature of the wafer 200 (wafer temperature) is described as a case that means a case that the wafer temperature is converted according to the temperature conversion data described later, that is, a case that the wafer temperature is estimated, a case that means a case that the temperature is obtained by directly measuring the temperature of the wafer 200 using the temperature sensor 263, and a case that means both of these. It is also possible to obtain the transition of temperature change of the quartz plate 101 or the susceptor 103 and the wafer 200 in advance through the temperature sensor 263, so as to store temperature conversion data indicating the correlation between the temperature of the quartz plate 101 or the susceptor 103 and the wafer 200 in the storage device 121c or the external storage device 123. By preparing the temperature conversion data in advance in this way, the temperature of the wafer 200 can be estimated by measuring only the temperature of the quartz plate 101, and the output of the microwave oscillator 655, that is, the heating device can be controlled based on the estimated temperature of the wafer 200. In addition, as a means of measuring the temperature of the substrate, it is not limited to the aforementioned radiation thermometer, and a thermocouple may be used for temperature measurement, or a thermocouple and a non-contact thermometer may be used for temperature measurement. However, when a thermocouple is used for temperature measurement, the thermocouple needs to be arranged near the wafer 200 for temperature measurement. That is, since a thermocouple needs to be arranged in the processing chamber 201, the thermocouple itself is heated by the microwave supplied from the microwave oscillator described later, so that the temperature cannot be accurately measured. Therefore, it is preferable to use a non-contact thermometer as the temperature sensor 263. In addition, the temperature sensor 263 is not limited to being provided on the cover flange 104, but may be provided on the mounting table 210. In addition, the temperature sensor 263 is not only provided directly on the cover flange 104 or the mounting table 210, but may also be configured to indirectly measure by reflecting the radiated light from the measurement window provided on the cover flange 104 or the mounting table 210 using a mirror or the like. Furthermore, the temperature sensor 263 is not limited to being provided at one, but may be provided at a plurality of locations. Electromagnetic wave introduction ports (microwave introduction ports) 653-1 and 653-2 are provided on the side wall of the housing 102. One end of each of waveguides 654-1 and 654-2 for supplying electromagnetic waves (microwaves) into the processing chamber 201 is connected to each of the electromagnetic wave introduction ports 653-1 and 653-2. Microwave oscillators (electromagnetic wave sources, electromagnetic wave oscillators) 655-1 and 655-2 as heating sources for supplying electromagnetic waves into the processing chamber 201 for heating are connected to the other ends of each of the waveguides 654-1 and 654-2. The microwave oscillators 655-1 and 655-2 supply electromagnetic waves such as microwaves to the waveguides 654-1 and 654-2, respectively. In addition, the microwave oscillators 655-1 and 655-2 use magnetrons or klystrons. Hereinafter, the electromagnetic wave introduction ports 653-1, 653-2, the waveguides 654-1, 654-2, and the microwave oscillators 655-1, 655-2 will be described as the electromagnetic wave introduction port 653, the waveguide 654, and the microwave oscillator 655 unless there is a need to distinguish them from each other. The frequency of the electromagnetic wave generated by the microwave oscillator 655 is preferably controlled to be in the frequency range of 13.56 MHz or more and 24.125 GHz or less. More preferably, it is controlled to be 2.45 GHz or 5.8 GHz. Here, the frequencies of the microwave oscillators 655-1 and 655-2 can be set to the same frequency or different frequencies. In addition, in the present embodiment, although two microwave oscillators 655 are described as being arranged on the side of the housing 102, this is not limited thereto, and more than one may be provided, and they may also be arranged on different side surfaces such as the opposite side surfaces of the housing 102. The microwave oscillators 655-1, 655-2, the waveguides 654-1, 654-2, and the electromagnetic wave introduction ports 653-1, 653-2 constitute an electromagnetic wave supply unit (also referred to as an electromagnetic wave supply unit, a microwave supply unit, or a microwave supply unit) as a heating device. The controller 121 described later is connected to each of the microwave oscillators 655-1 and 655-2. The temperature sensor 263 for measuring the temperature of the quartz plate 101a or 101b or the wafer 200 housed in the processing chamber 201 is connected to the controller 121. The temperature sensor 263 measures the temperature of the quartz plate 101 or the wafer 200 by the above-mentioned method and transmits the temperature to the controller 121, and the controller 121 controls the output of the microwave oscillators 655-1 and 655-2 to control the heating of the wafer 200. In addition, as a method of heating control by the heating device, a method of controlling the heating of the wafer 200 by controlling the voltage input to the microwave oscillator 655 and a method of controlling the heating of the wafer 200 by changing the ratio of the time when the power of the microwave oscillator 655 is turned on and the time when it is turned off can be used. Here, the microwave oscillators 655-1 and 655-2 are controlled by the same control signal sent from the controller 121. However, the present invention is not limited to this, and the microwave oscillators 655-1 and 655-2 may be controlled separately by sending separate control signals from the controller 121 to the microwave oscillators 655-1 and 655-2. (Control device) As shown in FIG4 , the control unit (control device, control unit), i.e., the controller 121, is configured as a computer having a CPU (Central Processing Unit) 121a, a RAM (Random Access Memory) 121b, a storage device 121c, and an I / O port 121d. The RAM 121b, the storage device 121c, and the I / O port 121d are configured to be able to exchange data with the CPU 121a via an internal bus 121e. The controller 121 is connected to an input / output device 122 such as a touch panel. The storage device 121c is composed of, for example, a flash memory, a HDD (Hard Disk Drive), etc. A control program for controlling the operation of the substrate processing device or a process recipe recording the steps or conditions of the annealing (modification) process, etc. is stored in the storage device 121c in a readable manner. The process recipe is a combination of the controller 121 to execute each step in the substrate processing process described later so as to obtain a predetermined result, and functions as a program. Hereinafter, the process recipe or the control program, etc. are collectively referred to as a program. In addition, the process recipe is also referred to as a recipe. When the term "program" is used in this specification, it may include only a recipe, only a control program, or both. The RAM 121b is configured as a memory area (work area) that temporarily stores programs and data read by the CPU 121a. The I / O port 121d is connected to the aforementioned transfer machine 125, MFC241, valve 243, pressure sensor 245, APC valve 244, vacuum pump 246, temperature sensor 263, drive mechanism 267, microwave oscillator 655, etc. The CPU 121a is configured to read out a control program from the storage device 121c and execute it, and to read out a recipe from the storage device 121c according to input of an operation command from the input / output device 122. The CPU 121a is configured to control the transfer operation of the substrate by the transfer machine, the flow rate adjustment operation of various gases by the MFC 241, the opening and closing operation of the valve 243, the pressure adjustment operation by the APC valve 244 based on the pressure sensor 245, the start and stop of the vacuum pump 246, the output adjustment operation of the microwave oscillator 655 based on the temperature sensor 263, the ON / OFF operation of the microwave output from the microwave oscillator 655, the rotation and rotation speed adjustment operation or the lifting and lowering operation of the mounting table 210 (or the wafer boat 217) by the drive mechanism 267, etc. according to the contents of the read out recipe. The controller 121 can be configured by installing the aforementioned program stored in an external storage device (e.g., a magnetic disk such as a hard disk, an optical disk such as a CD, a magneto-optical disk such as an MO, a semiconductor memory such as a USB memory) 123 into a computer. The storage device 121c or the external storage device 123 is configured as a recording medium that can be read by a computer. Hereinafter, they are also collectively referred to as recording media. When the term recording media is used in this specification, there are cases where only the storage device 121c is included, only the external storage device 123 is included, or both are included. In addition, instead of using the external storage device 123, the program can be provided to the computer using a communication means such as the Internet or a dedicated line. As shown in FIG5 , the microwave oscillator 655 supplies electromagnetic waves in a pulsed state, which is turned on at a first predetermined time (T1) and turned off at a second predetermined time (T2). Here, the first predetermined time and the second predetermined time can be changed. For example, the pulse frequency can be set to 1 to 100 kHz. In other words, the pulse period (T=T1+T2) can be set to 10 microseconds to 1 second. In addition, for example, the duty cycle (D=T1 / T) can be set to 10% to 90%. With this setting, the output power amount per unit time of the electromagnetic wave with a power supply frequency (for example, 2.45 GHz) is reduced according to the value of the duty cycle. The pulse frequency and duty cycle of the electromagnetic wave output from the microwave oscillator 655 can be set from the input / output device 122. In this setting, as shown in FIG6 , the operator first confirms the parameter setting, then inputs the pulse value (pulse frequency) and duty cycle, and finally confirms the power output. (2) Substrate processing steps According to the processing flow shown in Figure 7, an example of a method for modifying (crystallizing) a processing object film FL1 formed on a wafer 200 and being subjected to heat treatment (modification treatment) as a process in a manufacturing process of a semiconductor device (element) using the processing furnace of the aforementioned substrate processing apparatus 100 is described. As shown in FIG8 , an oxide film FL2 as a second film and a process target film FL1 as a first film are formed on a wafer 200. The process target film FL1 is, for example, an amorphous silicon (Si) film to which a dopant (impurity) is added. The dopant is, for example, phosphorus (P) or boron (B). A silicon film to which P is added (doped) is called a P-doped-Si film. The oxide film FL2 is, for example, a silicon oxide film (SiO film). In addition, the SiO film is a film formed by making the reaction chamber an oxygen atmosphere and diffusing oxygen (O) to the surface of the silicon substrate. In addition, the P-doped-Si film is a film into which P (phosphorus) is ion-implanted. These SiO films and P-doped-Si films are formed on the wafer 200 by a substrate processing device different from the aforementioned substrate processing device 100, such as a batch-type substrate processing device or an ion implantation device. In the following description, the operations of the various components constituting the substrate processing apparatus 100 are controlled by the controller 121. In addition, similarly to the aforementioned processing furnace structure, in the substrate processing process of this embodiment, regarding the processing content, that is, the recipe, the same recipe is used in a plurality of processing furnaces, and therefore only the substrate processing process using one processing furnace is described, and the description of the substrate processing process using another processing furnace is omitted. The term "wafer" used in this specification may refer to the wafer itself or to a laminate of a wafer and a predetermined layer or film formed on its surface. The term "surface of a wafer" used in this specification may refer to the surface of the wafer itself or to the surface of a predetermined layer, etc., formed on the wafer. When "a predetermined layer is formed on a wafer" is stated in this specification, it may refer to the case where a predetermined layer is directly formed on the surface of the wafer itself or to the case where a predetermined layer is formed on a layer, etc. formed on the wafer. The use of the term "substrate" in this specification is also synonymous with the use of the term "wafer". First, after the substrate removal process (S801), the substrate loading process (S802) is implemented, and the wafer 200 is loaded (wafer boat loaded) into the predetermined processing chamber 201 by opening and closing the gate valve 205. That is, two wafers placed on the low-temperature tweezers 125a-1 and the high-temperature tweezers 125a-2 are loaded into the processing chamber 201. (Furnace pressure / temperature adjustment step (S803)) After the wafer 200 is loaded into the processing chamber 201, the atmosphere in the processing chamber 201 is controlled to a predetermined pressure (e.g., 10Pa to 102000Pa). Specifically, while exhausting the atmosphere using the vacuum pump 246, the valve opening of the pressure regulator 244 is feedback-controlled based on the pressure information detected by the pressure sensor 245, so that the pressure in the processing chamber 201 is the predetermined pressure. In addition, the expression of a numerical range such as "10Pa~102000Pa" in this specification means that the lower limit and the upper limit are included in the range. Therefore, for example, "10Pa~102000Pa" means "10Pa or more and 102000Pa or less". The same applies to other numerical ranges. (Inert Gas Supplying Step (S804)) When the pressure and temperature in the processing chamber 201 are controlled to predetermined values by the furnace pressure / temperature adjustment step S803, the drive mechanism 267 rotates the shaft 255, and rotates the wafer 200 via the wafer boat 217 on the mounting table 210. At this time, an inert gas such as nitrogen is supplied via the gas supply pipe 232 (S804). Furthermore, at this time, the pressure in the processing chamber 201 is a predetermined value in the range of 10 to 102000 Pa, for example, adjusted to 101300 to 101650 Pa. In addition, the shaft may be rotated after the wafer 200 is loaded into the processing chamber 201 during the substrate loading step S402. As the inert gas, in addition to nitrogen (N 2 ), for example, a rare gas such as argon (Ar), helium (He), neon (Ne), or xenon (Xe) can be used. (Preliminary Heating Step (S805)) Next, when the pressure in the processing chamber 201 is set to a predetermined value, the microwave oscillator 655 supplies microwaves into the processing chamber 201 via the aforementioned components. The microwave output is smaller than the microwave output in the reforming step described later, and the ON time of the microwave supply and the OFF time shorter than the ON time are repeated for a predetermined number of times or a predetermined time, thereby performing a preliminary heating process for heating the wafer 200. Thus, by slowly increasing the temperature of the wafer, it is possible to prevent the wafer from warping or cracking. (Reforming step (S806)) While maintaining the predetermined pressure in the processing chamber 201, the microwave oscillator 655 supplies microwaves into the processing chamber 201 through the aforementioned parts to process the wafer 200 (perform a reforming process). The microwave pulse irradiation repeats the following operations: the microwave supply is turned OFF before heat conduction, and the microwave supply is turned ON to maintain temperature rise and heating (thermal balance). In other words, the temperature rise rate is suppressed, and heating is performed while maintaining thermal balance until internal heat conduction (selective heating and internal heating). If the continuous irradiation time of microwaves is long, although heating based on Joule heating (heat conduction) is dominant, internal heat conduction can be suppressed by microwave pulse irradiation. Since the ON time and OFF time of the microwave supply can be changed, ON / OFF can be repeated in a shorter cycle. Therefore, since the thermal equilibrium state is maintained, it is expected that the heating selectivity can be maintained. In order to suppress heat diffusion, the ON time is preferably on the order of 1 microsecond. The controller 121 is configured to control the microwave oscillator 655 in the following manner: the microwave pulse irradiation is set to ON in order to heat the dopant of the processing object film FL1 through microwave pulse irradiation, and the microwave irradiation is set to OFF before the oxide film FL2 is heated, that is, in order not to heat the oxide film FL2. For example, the frequency of the microwave power source is 2.45 GHz. For example, the ON time of the microwave supply and the OFF time longer than the ON time are repeated for a predetermined number of times or a predetermined time to heat the wafer 200. Here, it is preferred that the ON time is greater than 0.6 microseconds and less than 10 microseconds. When the ON time is less than 0.6 microseconds, the heating is insufficient and the dopant is not activated. When the ON time is more than 10 microseconds, the heating is dominant due to heat conduction. As the film FL1 to be processed to which a dopant is added by ion implantation, a P-doped-Si film is taken as an example, and its reaction model is described using FIG9. In the P-doped-Si film, not only unbonded portions are formed (Si and P as a dopant around the V surrounded by the dotted circle are unbonded), but also dipoles DP are formed at the same time. If microwaves are supplied, since dipoles DP exist in the P-doped-Si film, P can be activated by microwave heating, and the dipoles DP gradually decrease by the energy of the microwaves, and the unbonded portions are gradually replenished. Since the dipoles DP disappear due to the activation of P, heating with the same energy is not possible. In other words, since self-limitation is applied, activation continues only when heating is insufficient. Therefore, only P is activated by microwave heating, and diffusion of impurities caused by heat conduction is suppressed. In other words, heat diffusion is suppressed, and only the film FL1 to be processed can be heated without heating the oxide film FL2. (Substrate unloading step (S807)) After the pressure in the processing chamber 201 is returned to atmospheric pressure, the gate valve 205 is opened to spatially connect the processing chamber 201 with the transfer chamber 203. Then, the heated (processed) wafer 200 placed on the wafer boat 217 is unloaded to the transfer chamber 203 by the high temperature tweezers 125a-2 of the transfer machine 125 (S807). (Substrate Cooling Step (S808)) A heated (processed) wafer 200 moved out by the high-temperature tweezers 125a-2 is moved to the cooling chamber 204 through the continuous action of the transfer device 125b and the transfer device elevator 125c, and two wafers 200 are placed in the cooling chamber 108 by the high-temperature tweezers 125a-2 and cooled by being placed for a predetermined time (S808). (Substrate Accommodation Process (S809)) The two wafers 200 cooled in the substrate cooling step S808 are taken out of the cooling chamber 108 and transported to a predetermined wafer box. Although one process of manufacturing a semiconductor device is described above, the present invention is not limited to this and can also be applied to techniques for processing substrates such as patterning processing in the manufacturing process of a liquid crystal panel, patterning processing in the manufacturing process of a solar cell, or patterning processing in the manufacturing process of a power device. In addition, the present disclosure is not limited to the above-described embodiments, and also includes various modified examples. For example, the above-described embodiments are embodiments described in detail to easily explain the present disclosure, and are not limited to all the structures described. Furthermore, the aforementioned structures, functions, controllers as control units, etc., are described mainly by creating programs to realize part or all of them, but of course, part or all of them can also be realized by hardware by designing them with integrated circuits, etc. That is, all or part of the functions of the processing unit can also be realized by integrated circuits such as ASIC (Application Specific Integrated Circuit) and FPGA (Field Programmable Gate Array) instead of programs. In the aforementioned method, an example of forming a film using a single-piece substrate processing device that processes one or more substrates at a time is described. The present disclosure is not limited to the aforementioned method, and can also be appropriately applied to the case where a film is formed using a batch-type substrate processing device that processes multiple substrates at a time. In addition, in the aforementioned method, an example of forming a film using a substrate processing device having a cold-wall type processing furnace is described. The present disclosure is not limited to the aforementioned method, and can also be appropriately applied to the case where a film is formed using a substrate processing device having a hot-wall type processing furnace. When using these substrate processing devices, each process can be performed with the same processing steps and processing conditions as the above-mentioned method, and the same effect as the above-mentioned method can be obtained.
[0006] 100: substrate processing device 121: Controller (control unit) 201: Processing room 655-1, 655-2: Microwave oscillator (electromagnetic wave oscillator)
Claims
1. A substrate processing apparatus, characterized in that it comprises: a processing chamber for processing a substrate having a first film with added dopant and a second film different from the first film; an electromagnetic wave supply unit for supplying electromagnetic waves to the substrate; and a control unit configured to control the electromagnetic wave supply unit such that, during the heating of the dopant by the electromagnetic wave, the supply of the electromagnetic wave is stopped before the second film is heated, wherein the electromagnetic wave is a pulse with a first predetermined time set to ON and a second predetermined time set to OFF.
2. The substrate processing apparatus as claimed in claim 1, wherein, The aforementioned second scheduled time is longer than the aforementioned first scheduled time.
3. The substrate processing apparatus as claimed in claim 1, wherein, It is capable of changing the aforementioned first predetermined time and the aforementioned second predetermined time.
4. The substrate processing apparatus as claimed in claim 1, wherein, The aforementioned first predetermined time is set to be no less than 0.6 μs.
5. The substrate processing apparatus as claimed in claim 1, wherein, The aforementioned dopants have dipoles.
6. The substrate processing apparatus as claimed in claim 5, wherein, The aforementioned dopant is at least boron or phosphorus.
7. The substrate processing apparatus as claimed in claim 6, wherein, The aforementioned first membrane is ion-implanted with at least the aforementioned boron or the aforementioned phosphorus.
8. The substrate processing apparatus as claimed in claim 1, wherein, At least a silicon film is formed in the aforementioned first film.
9. The substrate processing apparatus as claimed in claim 8, wherein, At least an oxide film is formed in the aforementioned second film.
10. The substrate processing apparatus of claim 1, wherein, The aforementioned first membrane is formed on the aforementioned second membrane.
11. The substrate processing apparatus of claim 1, wherein, The aforementioned electromagnetic waves are microwaves.
12. The substrate processing apparatus of claim 1, wherein, It has a substrate holding section capable of holding multiple of the aforementioned substrates.
13. The substrate processing apparatus of claim 1, wherein, The aforementioned electromagnetic wave supply unit is located on the side of the aforementioned processing chamber.
14. The substrate processing apparatus of claim 13, wherein, An inlet / outlet for loading and unloading the aforementioned substrate is provided at a position opposite to the aforementioned electromagnetic wave supply section.
15. A substrate processing method, characterized in that it comprises the following steps: supplying an electromagnetic wave to a substrate having a first film with added dopant and a second film different from the first film, the electromagnetic wave being a pulse with a first predetermined time set to ON and a second predetermined time set to OFF; and stopping the supply of the electromagnetic wave before the second film is heated while the dopant is being heated by the electromagnetic wave.
16. A method for manufacturing a semiconductor device, characterized in that a substrate processing method as described in claim 15 is used.
17. A computer-readable recording medium recording a program that causes a substrate processing apparatus to perform the following steps: supplying electromagnetic waves to a substrate having a first film with added dopant and a second film different from the first film, the electromagnetic waves being pulsed with a first predetermined time set to ON and a second predetermined time set to OFF; and stopping the supply of the electromagnetic waves before the second film is heated while the dopant is being heated by the electromagnetic waves.